JPH07249587A - Member for liquid phase epitaxial growth and its manufacturing method - Google Patents

Member for liquid phase epitaxial growth and its manufacturing method

Info

Publication number
JPH07249587A
JPH07249587A JP7023544A JP2354495A JPH07249587A JP H07249587 A JPH07249587 A JP H07249587A JP 7023544 A JP7023544 A JP 7023544A JP 2354495 A JP2354495 A JP 2354495A JP H07249587 A JPH07249587 A JP H07249587A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
phase epitaxial
slider
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7023544A
Other languages
Japanese (ja)
Inventor
Kazuo Saito
一夫 斉藤
Takeshi Ishimatsu
毅志 石松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nisshinbo Holdings Inc
Original Assignee
Nisshinbo Industries Inc
Nisshin Spinning Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nisshinbo Industries Inc, Nisshin Spinning Co Ltd filed Critical Nisshinbo Industries Inc
Priority to JP7023544A priority Critical patent/JPH07249587A/en
Publication of JPH07249587A publication Critical patent/JPH07249587A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a member for liquid phase epitaxial growth without causing an impurity adsorbed inside to appear on the surface by eliminating an open pore by forming polycarbodiimide resin with a high carbon content after baking carbonization for carbonization to form a glass-shaped carbon. CONSTITUTION:A boat member 1 for liquid phase epitaxial growth device, a slider 2, and a boat lid 3 are created as follows. Namely, polycarbodiimide resin liquid solution is injected into each corresponding metal mold, is formed at 60 deg.C for 20 hours and 120 deg.C for 10 hours, and then is taken out of the mold. After that, it is heat-treated at 200 deg.C for 10 hours, thus carbonizing resin. Round holes 4 are punched at two locations in the boat member 1 and at the same time a space 5 for inserting the slider 2 is provided near the bottom surface, thus eliminating the round holes 4 of the boat member 1 and preventing the run-off of a liquid solution in the round hole 4 by the slider 2. Also, the slider 2 is in 15 mm (Width) X 200m (Length) X 3mm (Thickness) and a recess 6 for receiving a single crystal is provided on it.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、化合物半導体の液相エ
ピタキシャル成長(インジウム、ガリウム、ヒ素、リン
を使用する)を行う際に用いられる部材及びその製造方
法に関するものであり、更に詳しくは、開気孔がなく、
粉体の離脱もみられない、ボート、スライダー及びその
他の治具に代表される液相エピタキシャル成長用部材及
びその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a member used for liquid phase epitaxial growth of a compound semiconductor (using indium, gallium, arsenic and phosphorus) and a method for manufacturing the member. No pores,
The present invention relates to a member for liquid phase epitaxial growth represented by boats, sliders and other jigs, in which no separation of powder is observed, and a method for manufacturing the member.

【0002】[0002]

【従来の技術】液相エピタキシャル成長は、半導体素子
の製造工程における薄膜成長技術の一種であり、ガリウ
ム等の過飽和融液を使用して、半導体基板上に直接に薄
膜を成長させる方法をいう。
2. Description of the Related Art Liquid phase epitaxial growth is a kind of thin film growth technique in the manufacturing process of semiconductor devices, and is a method of growing a thin film directly on a semiconductor substrate using a supersaturated melt such as gallium.

【0003】上記液相エピタキシャル成長のための装置
は、スライドボート法では、過飽和融液を入れるボー
ト、半導体基板を移動させるためのスライダー及びその
他の治具等より構成されており、これらボート、スライ
ダー及びその他の治具には、従来、高純度で密度の高い
黒鉛が用いられていた。
In the slide boat method, the apparatus for the liquid phase epitaxial growth is composed of a boat for inserting a supersaturated melt, a slider for moving a semiconductor substrate, and other jigs. These boat, slider and Conventionally, graphite having high purity and high density has been used for other jigs.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記黒
鉛は、熱伝導率が高く、高純度であり、熱衝撃性が強
く、更に金属との反応性が低いという特徴を有するもの
の、その表面には開気孔が存在するため、不純物を吸着
したり、リンや砒素が入り込み、これらが液相エピタキ
シャル成長時に成長膜に触れてしまい、エピタキシャル
膜の特性が悪化するという難点があった。
However, although the above graphite has the characteristics of high thermal conductivity, high purity, high thermal shock resistance, and low reactivity with metals, its surface has Since there are open pores, there is a problem that impurities are adsorbed or phosphorus or arsenic enters, and these come into contact with the growth film during liquid phase epitaxial growth, which deteriorates the characteristics of the epitaxial film.

【0005】又、黒鉛は、表面から黒鉛粉末が離脱しや
すいなどの欠点を更に有するが、この黒鉛粉末も、エピ
タキシャル膜の特性を悪化させる原因となっていた。
[0005] Further, graphite further has a defect that the graphite powder is easily detached from the surface, but this graphite powder has also been a cause of deteriorating the characteristics of the epitaxial film.

【0006】このようなことから、有機重合体(塩化ビ
ニール)を不完全に熱分解することにより得たピッチを
芳香族系溶剤と共に混合してスラリーとし、このスラリ
ーを黒鉛材科による適宜の成型品に塗布した後、焼成す
る方法(特公昭52−39684号公報参照)等によ
り、前記成型品をガラス状炭素で被覆し、黒鉛粉末の発
生を防止しようとする試みもなされているが、この方法
では、厚い被覆が形成できなかったり、クラックが発生
したりして、十分な効果を得ることはできなかった。
From the above, pitch obtained by incompletely pyrolyzing an organic polymer (vinyl chloride) is mixed with an aromatic solvent to form a slurry, and the slurry is appropriately molded by a graphite material department. It has been attempted to coat the molded product with glassy carbon to prevent the generation of graphite powder by, for example, a method of applying it to the product and then firing it (see Japanese Patent Publication No. 52-39684). According to the method, a thick coating could not be formed or a crack was generated, so that a sufficient effect could not be obtained.

【0007】本発明は、上述した従来技術における問題
点を解決し、開気孔がなく、粉末の離脱がみらることの
ない、ボート、スライダー及びその他の治具に代表され
る液相エピタキシャル成長用部材を提供することを目的
としてなされたものである。
The present invention solves the above-mentioned problems in the prior art, and is for liquid phase epitaxial growth represented by boats, sliders and other jigs, which has no open pores and no separation of powder is observed. It is made for the purpose of providing a member.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に本発明が採用した液相エピタキシャル成長用部材の構
成は、ポリカルボジイミド樹脂に由来するガラス状炭素
よりなることを特徴とするものであり、又、上記目的を
達成するために本発明が採用した液相エピタキシャル成
長用部材の製造方法の構成は、ポリカルボジイミド樹脂
或いは主としてポリカルボジイミド樹脂よりなる組成物
を液相エピタキシャル成長用部材の形状に成形し、次い
で該成形物を炭素化することを特徴とするものである。
The constitution of the member for liquid phase epitaxial growth adopted by the present invention to achieve the above object is characterized in that it is made of glassy carbon derived from a polycarbodiimide resin. Further, in order to achieve the above object, the constitution of the method for producing a liquid phase epitaxial growth member adopted by the present invention, a composition comprising a polycarbodiimide resin or a polycarbodiimide resin is molded into a liquid phase epitaxial growth member shape, Then, the molded product is carbonized.

【0009】即ち、本発明の発明者らは、焼成炭化後の
炭素含有量が高く、旦つ、収率も高い樹脂であるポリカ
ルボジイミド樹脂に注目し、この樹脂を液相エピタキシ
ャル成長用部材に成形して炭素化し、ガラス状炭素とす
れば、開気孔がなく、粉末の離脱がみられることのない
液相エピタキシャル成長用部材が得られるのではないか
という発想を得、更に研究を続けた結果、本発明を完成
した。
That is, the inventors of the present invention pay attention to a polycarbodiimide resin which is a resin having a high carbon content after firing and carbonization and a high yield, and molding this resin into a member for liquid phase epitaxial growth. If carbonized and made into glassy carbon, I got the idea that a member for liquid phase epitaxial growth without open pores and without separation of powder could be obtained, and as a result of further research, The present invention has been completed.

【0010】以下、本発明について詳細に説明する。The present invention will be described in detail below.

【0011】本発明において対象となる液相エピタキシ
ャル成長用部材は、主に上記スライドボート法で使用さ
れるものであって、これにはすでに述べたように、過飽
和融液を入れるボート、半導体基板を移動させるための
スライダー及びその他の治具が含まれ、通常これらの部
材は黒鉛を加工することにより製造されている。
The liquid phase epitaxial growth member to be used in the present invention is mainly used in the slide boat method, and as described above, it includes a boat for inserting a supersaturated melt and a semiconductor substrate. It includes sliders and other jigs for moving, and these members are usually manufactured by processing graphite.

【0012】本発明では、上記液相エピタキシャル成長
用部材を炭素化されたポリカルボジイミド樹脂に由来す
るガラス状炭素により形成するものである。
In the present invention, the member for liquid phase epitaxial growth is formed of glassy carbon derived from carbonized polycarbodiimide resin.

【0013】上記ポリカルボジイミド樹脂それ自体は周
知ものか、或いは、周知のものと同様にして製造するこ
とができるものであって{米国特許第2,94l,95
6号明細書;特公昭47−33279号公報;J.Or
g.Chem.,28,2069〜2075(196
3)Chemical Review l98l,vo
l.8l.No.4,6l9〜62l等参照}、例え
ば、カルボジイミド化触媒の存在下、有機ジイソシアネ
ートの脱二酸化炭素を伴う縮合反応により容易に製造す
ることができる。
The above-mentioned polycarbodiimide resin itself is well-known, or can be produced in the same manner as well-known ones [US Pat. No. 2,941,95].
6, Japanese Patent Publication No. 47-33279, J. Or
g. Chem. , 28 , 2069-2075 (196
3) Chemical Review l98l, vo
l. 8l. No. 4, 619 to 62l, etc.}, for example, it can be easily produced by a condensation reaction involving decarbonization of an organic diisocyanate in the presence of a carbodiimidization catalyst.

【0014】上記ポリカルボジイミド樹脂の製造に使用
される有機ジイソシアネートとしては、脂肪族系、脂環
式系、芳香族系、芳香−脂肪族系等のいずれのタイプも
のであってもよく、これらは単独で用いても、或いは、
2種以上を組み合わせて共重合体として用いてもよい。
The organic diisocyanate used for producing the above polycarbodiimide resin may be of any type such as aliphatic type, alicyclic type, aromatic type and aromatic-aliphatic type. Used alone, or
You may use it as a copolymer combining 2 or more types.

【0015】而して、本発明において使用されるポリカ
ルボジイミド樹脂には、下記式 −R−N=C=N− (但し、式中のRは有機ジイソシアネート残基を表す)
で示される少なくともl種の繰り返し単位からなる単独
重合体または共重合体が包含される。
Thus, the polycarbodiimide resin used in the present invention has the following formula -RNN = C = N- (wherein R in the formula represents an organic diisocyanate residue).
The homopolymers or copolymers of at least 1 type of repeating unit represented by

【0016】有機ジイソシアネート残基である上記式に
おけるRとしては、中でも芳香族ジイソシアネート残基
が好適である(ここで、有機ジイソシアネート残基と
は、有機ジイソシアネート分子から2つのイソシアネー
ト基(NCO)を除いた残りの部分をいう)。このよう
なポリカルボジイミド樹脂の具体例としては、以下のも
のを挙げることができる。
As R in the above formula, which is an organic diisocyanate residue, an aromatic diisocyanate residue is particularly preferable (here, the organic diisocyanate residue is obtained by removing two isocyanate groups (NCO) from the organic diisocyanate molecule). I say the rest). The following can be mentioned as specific examples of such a polycarbodiimide resin.

【化1】 [Chemical 1]

【0017】上記各式中において、nはl0〜l0,0
00の範囲内、好ましくは50〜5,000の範囲内で
あり、又、ポリカルボジイミド樹脂の末端は、モノイソ
シアネート等により封止されていてもよい。
In each of the above formulas, n is 10 to 10,0.
It is in the range of 00, preferably in the range of 50 to 5,000, and the end of the polycarbodiimide resin may be blocked with monoisocyanate or the like.

【0018】上記ポリカルボジイミド樹脂は、溶液のま
ま或いは溶液から沈殿させた粉末として得ることがで
き、このようにして得られたポリカルボジイミド樹脂
は、液状で得られるポリカルボジイミド樹脂の場合は、
そのまま或いは溶媒を留去して、又、粉末として得られ
るポリカルボジイミド樹脂の場合は、そのまま或いは溶
媒に溶解して液状とした後に使用すればよい。
The above polycarbodiimide resin can be obtained as a solution as it is or as a powder precipitated from the solution, and the polycarbodiimide resin thus obtained is a liquid obtained polycarbodiimide resin.
In the case of a polycarbodiimide resin obtained as it is or after distilling off the solvent, or as a powder, it may be used as it is or after being dissolved in a solvent to form a liquid.

【0019】本発明では、上記のポリカルボジイミド樹
脂或いはポリカルボジイミド樹脂溶液により、まず、ボ
ート、スライダー及びその他の治具に代表される液相エ
ピタキシャル成長用部材の形状の成形物を成形する。成
形物を成形する方法は、一般にこのような工程で使用さ
れる方法を利用することができ、特に制限はないが、例
えば射出成形、圧縮成形、注型成形、真空成形等を挙げ
ることができる。
In the present invention, a molded product in the shape of a member for liquid phase epitaxial growth represented by a boat, a slider and other jigs is first molded from the above polycarbodiimide resin or the polycarbodiimide resin solution. As a method for molding a molded article, a method generally used in such a step can be used, and there is no particular limitation, and examples thereof include injection molding, compression molding, cast molding, vacuum molding and the like. .

【0020】次いで、上記のようにして液相エピタキシ
ャル成長用部材の形状に形成された形成物を加熱し、前
記ポリカルボジイミド樹脂を炭素化してガラス状炭素と
することにより、目的とする本発明の液相エピタキシャ
ル成長用部材を得ることができる。この炭素化工程は、
真空中や窒素ガス中等の不活性雰囲気下において行うこ
とができ、その際の最終焼成温度は、好ましくは100
0℃〜3000℃である。
Next, the formed product formed in the shape of the member for liquid phase epitaxial growth as described above is heated to carbonize the polycarbodiimide resin into glassy carbon, whereby the target liquid of the present invention is obtained. A member for phase epitaxial growth can be obtained. This carbonization process
It can be carried out in an inert atmosphere such as vacuum or nitrogen gas, and the final firing temperature at that time is preferably 100.
It is 0 ° C to 3000 ° C.

【0021】尚、上記炭素化工程における最終焼成温度
までの昇温速度は、2℃/時間以下であることが好まし
く、あまりに早く最終焼成温度に達すると、ガラス状炭
素に開気孔が生じてしまうので好ましくない。
The temperature rising rate up to the final calcination temperature in the carbonization step is preferably 2 ° C./hour or less, and when the final calcination temperature is reached too early, open pores are formed in the glassy carbon. It is not preferable.

【0022】このように、得られた本発明の液相エピタ
キシャル成長用部材は、ポリカルボジイミド樹脂に由来
するガラス状炭素よりなるため、黒鉛製のものにおいて
みられた開気孔が全く存在せず、従って、リン、砒素そ
の他の不純物が内部へ入り込むこともない。又、通常の
黒鉛材料に比べてかさ密度が1.51〜1.8g/cm
2と小さいにもかかわらず、曲げ強度が1800〜40
00kg/cm2、ショアー硬度が121〜140で、
且つ開気孔のような欠損部分がないという緻密さ(均質
さ)を有しているので、クラックを生じることもないば
かりか、粉末の離脱もまったくない良好なものである。
As described above, since the obtained member for liquid phase epitaxial growth of the present invention is composed of glassy carbon derived from polycarbodiimide resin, there are no open pores found in graphite products, and Also, phosphorus, arsenic and other impurities do not enter inside. In addition, the bulk density is 1.51 to 1.8 g / cm compared to ordinary graphite materials.
Despite being as small as 2 , the bending strength is 1800-40
00 kg / cm 2 , Shore hardness of 121-140,
In addition, since it has a denseness (homogeneity) that there is no defective portion such as open pores, it is a good one in which cracks are not generated and the powder does not separate at all.

【0023】次に本発明を実施例により更に詳細に説明
する。
Next, the present invention will be described in more detail with reference to examples.

【0024】[0024]

【実施例】【Example】

実施例1 2,4−トリレンジイソシアネート/2,6−トリレン
ジイソシアネートの混合物(80:20)(TDI)5
4gをテトラクロロエチレン500ml中で、カルボジ
イミド化触媒(l−フェニル−3−メチルホスフォレン
オキサイド)0.l2gと共に、l20℃で4時間反応
させ、ポリカルボジイミド樹脂溶液を得た。
Example 1 Mixture of 2,4-tolylene diisocyanate / 2,6-tolylene diisocyanate (80:20) (TDI) 5
In 500 ml of tetrachloroethylene, 4 g of carbodiimidization catalyst (1-phenyl-3-methylphosphorene oxide) was added. A reaction was carried out with 12 g at 120 ° C. for 4 hours to obtain a polycarbodiimide resin solution.

【0025】次に、図1に示す液相エピタキシャル成長
装置用のボード部材1、スライダー2及びボートフタ3
を下記のように作成した。
Next, the board member 1, slider 2 and boat lid 3 for the liquid phase epitaxial growth apparatus shown in FIG.
Was created as follows.

【0026】即ち、上記ポリカルボジイミド樹脂溶液
を、上記ボード部材1、スライダー2及びボートフタ3
の形状にそれぞれ対応する金属の型(図示しない)に注
入し、60℃で20時間、120℃で10時間かけて成
形し、型から取り出した。その後、200℃で10時間
熱処理し、これを窒素中にて2℃/時間の昇温速度で2
000℃まで昇温してポリカルボジイミド樹脂を炭素化
し、目的とする本発明の液相エピタキシャル成長用部材
の一例を得た。このものの表面に気孔は観察、測定され
なかった。又、かさ密度は1.55、曲げ強度は270
0kg/cm2、ショアー硬度は130であった。
That is, the polycarbodiimide resin solution is added to the board member 1, the slider 2 and the boat lid 3.
Were poured into metal molds (not shown) corresponding to the above shapes, molded at 60 ° C. for 20 hours and 120 ° C. for 10 hours, and then taken out of the molds. After that, heat treatment is performed at 200 ° C. for 10 hours, and this is heated at 2 ° C./hour in nitrogen for 2
The temperature was raised to 000 ° C. to carbonize the polycarbodiimide resin, and an example of the intended member for liquid phase epitaxial growth of the present invention was obtained. No pores were observed or measured on the surface of this product. The bulk density is 1.55 and the bending strength is 270.
The Shore hardness was 0 kg / cm 2 and the Shore hardness was 130.

【0027】ボート部材1は全長75mm、巾30mm
とし、丸穴4を2ケ所に設けると共に、ボード部材1の
底面近くに、ボート部材1内にスライダー2を挿入する
隙間5を設け、このように構成することにより、ボート
部材1の丸穴4,4には底がなく、スライダー2によっ
て丸穴4,4内の溶液の流出が妨げられる構造とした。
尚、スライダー2は巾15mm、長さ200mm、厚さ
3mmで、その上には単結晶をのせるくぼみ6を設け、
又、ボート部材1のフタ3は15mmφの板状とした。
The boat member 1 has a total length of 75 mm and a width of 30 mm.
The round holes 4 of the boat member 1 are formed by providing the round holes 4 at two positions and the gap 5 for inserting the slider 2 into the boat member 1 near the bottom surface of the board member 1. , 4 has no bottom, and the slider 2 prevents the solution from flowing out of the round holes 4, 4.
The slider 2 has a width of 15 mm, a length of 200 mm, and a thickness of 3 mm, and a recess 6 for mounting a single crystal is provided on the slider 2.
Further, the lid 3 of the boat member 1 is a plate having a diameter of 15 mm.

【0028】次いで、上記本発明の液相エピタキシャル
成長用部材の一例を使用して、液相エピタキシャル成長
を以下のようにして行った。
Next, liquid phase epitaxial growth was carried out as follows using an example of the liquid phase epitaxial growth member of the present invention.

【0029】ボート本体1の丸穴4,4に金属ガリウム
を入れてふた3をし、スライダー2のくぼみ6には、ガ
リウム−ヒ素基板と液相エピタキシャル成長用ガリウム
−ヒ素基板を置いた。丸穴4,4の下部がいづれの基板
も接しないようにスライダー2を調節し、石英管内に入
れて真空にした。次に、水素ガスを流し、電気炉に入れ
温度を上昇させた。ガリウムが溶けたところでスライダ
ー2を移動させ、前記ガリウム−ヒ素基板によりガリウ
ム中にガリウム−ヒ素を飽和させ、その後に冷却を始め
た。次に、丸穴4,4下の液相エピタキシャル成長用ガ
リウム−ヒ素基板を移動させ、冷却を続け、ガリウム−
ヒ素を成長させ、同一方法、同一条件で3回液相エピタ
キシャル成長を行った。この方法により得られたガリウ
ム−ヒ素の導電型、キャリアー濃度、移動度、含有炭素
濃度及び含有酸素濃度を測定した。結果を表1に示す。
Metallic gallium was placed in the round holes 4 and 4 of the boat body 1 and the lid 3 was covered, and in the recess 6 of the slider 2, the gallium-arsenic substrate and the gallium-arsenic substrate for liquid phase epitaxial growth were placed. The slider 2 was adjusted so that the lower portions of the round holes 4 and 4 did not come into contact with any of the substrates, and the slider 2 was placed in a quartz tube to create a vacuum. Next, hydrogen gas was flown into the electric furnace to raise the temperature. When the gallium was melted, the slider 2 was moved to saturate the gallium-arsenic in the gallium-arsenic substrate, and then cooling was started. Next, the gallium-arsenic substrate for liquid phase epitaxial growth under the circular holes 4 and 4 is moved, cooling is continued, and
Arsenic was grown, and liquid phase epitaxial growth was performed three times under the same method and under the same conditions. The conductivity type, carrier concentration, mobility, carbon concentration and oxygen concentration of gallium-arsenic obtained by this method were measured. The results are shown in Table 1.

【0030】実施例2 実施例1において昇温速度を1℃/時間にした以外は同
様にして、その表面に気孔がない液相エピタキシャル成
長用部材を作製した。このものの表面に気孔は観察され
ず、かさ密度は1.56、曲げ強度は2700kg/c
2、ショアー硬度は130であった。実施例1と同様
にして液相エピタキシャル成長に使用した結果を表1に
示す。
Example 2 A liquid phase epitaxial growth member having no pores on its surface was produced in the same manner as in Example 1 except that the temperature rising rate was 1 ° C./hour. No pores were observed on the surface of this product, the bulk density was 1.56, and the bending strength was 2700 kg / c.
The m 2 and the Shore hardness were 130. Table 1 shows the results of use in liquid phase epitaxial growth in the same manner as in Example 1.

【0031】比較例 東洋炭素製の黒鉛材料(比重1.85)を用い、上記実
施例と同様の液相エピタキシャル成長用部材を形成し、
実施例と同一条件で3回液相エピタキシャル成長を行っ
た。この方法により得られたガリウム−ヒ素の導電型、
キャリアー濃度、移動度、含有炭素濃度及び含有酸素濃
度を測定した。結果を表1に示す(尚、比較例のものの
導電型がすべてp型となっているのは、黒鉛中の不純物
の影響によるものである)。
COMPARATIVE EXAMPLE A graphite material (specific gravity: 1.85) made by Toyo Tanso Co., Ltd. was used to form a member for liquid phase epitaxial growth similar to that in the above-mentioned embodiment.
Liquid phase epitaxial growth was performed three times under the same conditions as in the example. Gallium-arsenic conductivity type obtained by this method,
The carrier concentration, mobility, carbon concentration and oxygen concentration were measured. The results are shown in Table 1 (note that the conductivity types of the comparative examples are all p-type due to the influence of impurities in graphite).

【0032】[0032]

【表1】 [Table 1]

【0033】[0033]

【発明の効果】上記表1に示すように、本発明の液相エ
ピタキシャル成長用部材は、ポリカルボジイミド樹脂に
由来するガラス状炭素よりなるので、表面から粉末が離
脱したり、黒鉛製の部材のように内部に入り込んで吸着
されているリン、砒素その他の不純物が表面に出ること
がないため、キャリア濃度が低く、移動度が大きく且つ
不純物の少ない良好な半導体を作成することを可能とす
るものである。
As shown in Table 1 above, since the member for liquid phase epitaxial growth of the present invention is made of glassy carbon derived from polycarbodiimide resin, the powder is separated from the surface or the member is made of graphite. Since phosphorus, arsenic, and other impurities that have penetrated into the interior and adsorbed do not come out on the surface, it is possible to create a good semiconductor with low carrier concentration, high mobility, and few impurities. is there.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明液相エピタキシャル成長用部材の一例を
示す一部を断面とした側面図である。
FIG. 1 is a partial cross-sectional side view showing an example of a liquid phase epitaxial growth member of the present invention.

【符号の説明】[Explanation of symbols]

1 ボート部材 2 スライダー 3 ボートフタ 4,4 丸孔 6 くぼみ 1 Boat member 2 Slider 3 Boat lid 4, 4 Round hole 6 Recess

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C30B 19/06 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication C30B 19/06

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 ポリカルボジイミド樹脂に由来するガラ
ス状炭素よりなることを特徴とする液相エピタキシャル
成長用部材。
1. A member for liquid phase epitaxial growth comprising glassy carbon derived from a polycarbodiimide resin.
【請求項2】 ボート、スライダー及びその他の治具で
ある請求項1に記載の液相エピタキシャル成長用部材。
2. The member for liquid phase epitaxial growth according to claim 1, which is a boat, a slider and other jigs.
【請求項3】 ガラス状炭素は、ポリカルボジイミド樹
脂を真空中又は不活性雰囲気中で炭素化したものである
請求項1に記載の液相エピタキシャル成長用部材。
3. The member for liquid phase epitaxial growth according to claim 1, wherein the glassy carbon is obtained by carbonizing a polycarbodiimide resin in a vacuum or an inert atmosphere.
【請求項4】 表面に開気孔が存在しない請求項1に記
載の液相エピタキシャル成長用部材。
4. The liquid phase epitaxial growth member according to claim 1, wherein the surface has no open pores.
【請求項5】 ポリカルボジイミド樹脂或いは主として
ポリカルボジイミド樹脂よりなる組成物を液相エピタキ
シャル成長用部材の形状に成形し、次いで該成形物を炭
素化することを特徴とする液相エピタキシャル成長用部
材の製造方法。
5. A method for producing a member for liquid phase epitaxial growth, which comprises molding a polycarbodiimide resin or a composition mainly composed of polycarbodiimide resin into a shape of a member for liquid phase epitaxial growth, and then carbonizing the molded product. .
【請求項6】 液相エピタキシャル成長用部材は、ボー
ト、スライダー及びその他の治具である請求項5に記載
の液相エピタキシャル成長用部材の製造方法。
6. The method for producing a member for liquid phase epitaxial growth according to claim 5, wherein the member for liquid phase epitaxial growth is a boat, a slider and other jigs.
【請求項7】 成形物の炭素化は、真空中又は不活性雰
囲気中で行う請求項5に記載の液相エピタキシャル成長
用部材の製造方法。
7. The method for producing a member for liquid phase epitaxial growth according to claim 5, wherein carbonization of the molded product is performed in a vacuum or in an inert atmosphere.
【請求項8】 成形物の炭素化は、1000℃〜300
0℃の温度範囲で行う請求項7に記載の液相エピタキシ
ャル成長用部材の製造方法。
8. The carbonization of the molded product is 1000 ° C. to 300 ° C.
The method for producing a liquid phase epitaxial growth member according to claim 7, wherein the method is performed in a temperature range of 0 ° C.
【請求項9】 炭素化温度までの昇温速度を、2℃/時
間以下とする請求項8に記載の液相エピタキシャル成長
用部材の製造方法。
9. The method for producing a member for liquid phase epitaxial growth according to claim 8, wherein the rate of temperature increase up to the carbonization temperature is 2 ° C./hour or less.
JP7023544A 1994-01-18 1995-01-17 Member for liquid phase epitaxial growth and its manufacturing method Pending JPH07249587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7023544A JPH07249587A (en) 1994-01-18 1995-01-17 Member for liquid phase epitaxial growth and its manufacturing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1903394 1994-01-18
JP6-19033 1994-01-18
JP7023544A JPH07249587A (en) 1994-01-18 1995-01-17 Member for liquid phase epitaxial growth and its manufacturing method

Publications (1)

Publication Number Publication Date
JPH07249587A true JPH07249587A (en) 1995-09-26

Family

ID=26355824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7023544A Pending JPH07249587A (en) 1994-01-18 1995-01-17 Member for liquid phase epitaxial growth and its manufacturing method

Country Status (1)

Country Link
JP (1) JPH07249587A (en)

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