JPH07240356A - Storage of wafer and its transportation - Google Patents
Storage of wafer and its transportationInfo
- Publication number
- JPH07240356A JPH07240356A JP2972694A JP2972694A JPH07240356A JP H07240356 A JPH07240356 A JP H07240356A JP 2972694 A JP2972694 A JP 2972694A JP 2972694 A JP2972694 A JP 2972694A JP H07240356 A JPH07240356 A JP H07240356A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cleaning agent
- wafers
- cleaning
- ultrapure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ウェハを、洗浄剤、例
えば、超純水、イソプロピルアルコール(以下IPAと
いう)等により洗浄した後、清浄度を維持したまま保管
又は輸送することを可能にしたウェハの保管方法及び輸
送方法に関する。INDUSTRIAL APPLICABILITY The present invention enables a wafer to be stored or transported while maintaining its cleanliness after being cleaned with a cleaning agent such as ultrapure water or isopropyl alcohol (hereinafter referred to as IPA). The present invention relates to a storage method and a transportation method for the completed wafer.
【0002】[0002]
【従来の技術】従来から、半導体集積回路の製造工程に
おいては、ウェハへの不所望な付着物を除去するため、
超純水、イソプロピルアルコール等を用いてウェハの洗
浄を行う洗浄工程が設けられている。2. Description of the Related Art Conventionally, in the process of manufacturing a semiconductor integrated circuit, in order to remove undesired deposits on a wafer,
A cleaning process for cleaning the wafer using ultrapure water, isopropyl alcohol, etc. is provided.
【0003】そして、このようなウェハの洗浄工程にお
いて、超純水等により最終洗浄されたウェハは、リンサ
ードライヤー等の乾燥装置により乾燥された後、収納容
器に収納され、次工程の作業場所、保管場所等に搬送さ
れている。In such a wafer cleaning process, the wafer which is finally cleaned with ultrapure water or the like is dried by a dryer such as a rinser dryer and then stored in a storage container. It has been transported to a storage location.
【0004】[0004]
【発明が解決しようとする課題】上述したように、従来
の半導体集積回路の製造工程においては、ウェハを洗
浄、乾燥した後、収納容器に収容して搬送及び保管を行
っている。As described above, in the conventional semiconductor integrated circuit manufacturing process, after cleaning and drying the wafer, the wafer is housed in the container for transportation and storage.
【0005】しかしながら、このようにしてウェハの搬
送及び保管を行うと、搬送及び保管の際に微細な塵等が
ウェハ表面に付着することがある。ところが、半導体集
積回路の集積度がますます高まる今日において、ウェハ
表面上の塵等の汚染は、半導体集積回路の高集積化や高
歩留まりに極めて大きな悪影響を与えるようになってお
り、このような塵等の付着を防止して清浄度を維持する
ことが望まれている。また、ウェハ表面上に雰囲気中
の、有機溶剤等の蒸気が付着することもあり、半導体集
積回路の集積度がますます高まる近年、大きな問題とな
っている。However, when the wafer is transported and stored in this manner, fine dust or the like may adhere to the wafer surface during transportation and storage. However, as the degree of integration of semiconductor integrated circuits increases more and more, contamination of dust and the like on the surface of a wafer has an extremely great adverse effect on high integration and high yield of semiconductor integrated circuits. It is desired to prevent dust from adhering and maintain cleanliness. Further, vapors of organic solvents and the like in the atmosphere may adhere to the surface of the wafer, which has become a big problem in recent years as the degree of integration of semiconductor integrated circuits increases.
【0006】本発明は、かかる従来の事情に対処してな
されたもので、ウェハを洗浄した後、清浄度を維持した
まま保管又は輸送することのできるウェハの保管方法及
び輸送方法を提供することを目的とする。The present invention has been made in consideration of such conventional circumstances, and provides a method of storing and transporting a wafer which can be stored or transported after cleaning the wafer while maintaining the cleanliness. With the goal.
【0007】[0007]
【課題を解決するための手段】本発明のウェハの保管方
法は、ウェハを洗浄剤により洗浄し、洗浄剤を付着させ
たまま洗浄剤を冷却して洗浄剤を凍結させることによ
り、ウェハの表面を洗浄剤の凍結層で覆うことを特徴と
する。According to the method of storing a wafer of the present invention, a wafer is cleaned with a cleaning agent, and the cleaning agent is cooled while the cleaning agent is attached to freeze the cleaning agent. Is covered with a frozen layer of detergent.
【0008】上記ウェハの保管方法において、洗浄剤と
しては、超純水、イソプロピルアルコールまたはその混
合物を用いることができる。In the above wafer storage method, ultrapure water, isopropyl alcohol or a mixture thereof can be used as the cleaning agent.
【0009】また、本発明のウェハの輸送方法は、表面
を洗浄剤の凍結層で覆ったウェハを、冷凍手段を備えて
内部を前記洗浄剤の凍結層の凝固点より低い温度に保持
した断熱性の収納容器に収納して搬送することを特徴と
する。Further, the wafer transport method of the present invention has a heat insulating property in which a wafer whose surface is covered with a frozen layer of a cleaning agent is provided with a freezing means and the inside is kept at a temperature lower than the freezing point of the frozen layer of the cleaning agent. It is characterized in that it is stored in a storage container and transported.
【0010】上記ウェハの輸送方法において、洗浄剤と
しては、超純水、イソプロピルアルコールまたはその混
合物を用いることができる。In the above wafer transportation method, ultrapure water, isopropyl alcohol or a mixture thereof can be used as the cleaning agent.
【0011】また、上記ウェハの輸送方法において、冷
凍手段としては、収納容器に収容された寒剤を用いるこ
とができる。Further, in the above-mentioned wafer transport method, a cryogen contained in a container can be used as the freezing means.
【0012】また、上記ウェハの輸送方法において、冷
凍手段としては、収納容器に装着されたペルチェ電気素
子を用いることができる。Further, in the above-described wafer transportation method, a Peltier electric element mounted in a storage container can be used as the freezing means.
【0013】[0013]
【作用】本発明のウェハの保管方法及びその輸送方法に
よれば、ウェハ洗浄後、ウェハ表面の洗浄剤を急冷して
凍結させ、洗浄剤の凍結層でウェハの表面を覆った状態
で、このウェハを保管及び輸送する。According to the method of storing a wafer and the method of transporting the same of the present invention, after cleaning the wafer, the cleaning agent on the wafer surface is rapidly cooled and frozen, and the wafer surface is covered with a frozen layer of the cleaning agent. Store and transport wafers.
【0014】これによって、最終洗浄時の清浄度を維持
した状態で、ウェハを保管及び輸送することができ、雰
囲気中の、有機溶剤等の蒸気や塵等の付着を防止するこ
とができる。そして、後工程でさらに処理を施す際等
に、ウェハ表面の洗浄剤の凍結層を、超純水の流水等で
融解し、除去することにより、清浄度を維持した状態で
直ちに後工程の処理等を実施することができる。Thus, the wafer can be stored and transported while maintaining the cleanliness at the time of the final cleaning, and it is possible to prevent the vapor of the organic solvent and the like and the dust from adhering in the atmosphere. Then, when further processing is performed in a subsequent step, the frozen layer of the cleaning agent on the wafer surface is melted with running water such as ultrapure water and removed to immediately perform processing in the subsequent step while maintaining cleanliness. Etc. can be carried out.
【0015】[0015]
【実施例】以下、本発明の実施例を図面を参照しながら
詳細に説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【0016】図1に、本実施例における各工程を示す。
同図に示す、洗浄工程では、複数枚のウェハを、バスケ
ット等に並列配置し、このバスケットごと超純水洗浄
槽、あるいは所定の洗浄液が収容された洗浄液槽に順次
浸漬して洗浄を行う。通常、この洗浄工程における最終
洗浄は、超純水洗浄あるいは、IPA洗浄である。FIG. 1 shows each step in this embodiment.
In the cleaning step shown in the figure, a plurality of wafers are arranged in parallel in a basket or the like, and each basket is sequentially immersed in an ultrapure water cleaning tank or a cleaning solution tank containing a predetermined cleaning solution to perform cleaning. Usually, the final cleaning in this cleaning step is ultrapure water cleaning or IPA cleaning.
【0017】そして、最終洗浄が終了すると、次に、凍
結装置によるウェハの冷却工程が実施される。この冷却
工程は、例えば、図2に示すように、1または複数枚の
ウェハ22をクランプ21により挟持し、液体窒素23
等が収容された凍結槽24に浸漬することにより実施す
る。When the final cleaning is completed, a wafer cooling process is next performed by the freezing device. In this cooling step, for example, as shown in FIG. 2, one or a plurality of wafers 22 are clamped by a clamp 21, and liquid nitrogen 23 is used.
It is carried out by immersing in a freezing tank 24 in which
【0018】すなわち、ウェハ22の表面に、洗浄剤で
ある超純水等が付着させたまま、この状態で、急冷する
ことにより、ウェハ表面を超純水等の凍結層で覆う。こ
のように、ウェハ22の表面が、超純水等の凍結層によ
って覆われることにより、最終洗浄時の清浄度が保たれ
る。That is, while the ultrapure water or the like as the cleaning agent remains attached to the surface of the wafer 22, the wafer surface is rapidly cooled to cover the wafer surface with a frozen layer of the ultrapure water or the like. In this way, the surface of the wafer 22 is covered with the frozen layer of ultrapure water or the like, so that the cleanliness during the final cleaning is maintained.
【0019】そして、このように、表面に超純水等の凍
結層が形成された状態で、ウェハ22を、保管、輸送す
る。Then, the wafer 22 is stored and transported with the frozen layer of ultrapure water or the like formed on the surface thereof.
【0020】図3は、上述したようにして、急冷された
ウェハを搬送するための収納容器の構成を示すものであ
る。FIG. 3 shows the structure of a storage container for transporting the wafer which has been rapidly cooled as described above.
【0021】同図において、31は表面に超純水等の凍
結層が形成されたウェハであり、32は洗浄された複数
のウェハ31を並列配置する樹脂等からなるウェハキャ
リア、33はウェハキャリア32を収容し搬送するため
の断熱材等からなる収納容器である。In the figure, 31 is a wafer having a frozen layer of ultrapure water or the like formed on its surface, 32 is a wafer carrier made of resin or the like for arranging a plurality of cleaned wafers 31 in parallel, and 33 is a wafer carrier. It is a storage container made of a heat insulating material or the like for storing and transporting 32.
【0022】また、同図において、34は低温状態を維
持するために冷凍手段として洗浄剤の凍結層の凝固点よ
り低い温度に保持することのできるドライアイス等の寒
剤、35は収納容器の上部開口を閉塞する断熱材等から
なる蓋である。Further, in the figure, 34 is a freezing agent such as dry ice which can be kept at a temperature lower than the freezing point of the frozen layer of the cleaning agent as a refrigerating means in order to maintain a low temperature state, and 35 is an upper opening of the storage container. It is a lid made of a heat insulating material or the like for closing the.
【0023】上述したようにして超純水等の凍結層が形
成されたウェハ31は、ウェハキャリア32に複数枚収
納される。そして、長期間保管するような場合は、この
ウェハキャリア32を、冷凍庫等等に収容して保管す
る。A plurality of wafers 31 on which a frozen layer of ultrapure water or the like is formed as described above are stored in a wafer carrier 32. When the wafer carrier 32 is stored for a long period of time, the wafer carrier 32 is stored in a freezer or the like.
【0024】また、ウェハキャリア32を搬送する際に
は、ウェハキャリア32を図3に示したような収納容器
33に収納して搬送を行う。これによって、ウェハ31
を、次工程等に、表面に超純水等の凍結層が形成された
ままの状態で搬送することができる。When carrying the wafer carrier 32, the wafer carrier 32 is housed in a housing container 33 as shown in FIG. 3 and carried. As a result, the wafer 31
Can be transported to the next step or the like while the frozen layer of ultrapure water or the like is still formed on the surface.
【0025】そして、搬送先である次工程等において、
ウェハ31に所定の処理を施す際には、超純水等をウェ
ハ31に接触させて、ウェハ31の表面を覆う洗浄剤の
凍結層を融解する。Then, in the next step or the like which is the destination of conveyance,
When the wafer 31 is subjected to a predetermined process, ultrapure water or the like is brought into contact with the wafer 31 to melt the frozen layer of the cleaning agent that covers the surface of the wafer 31.
【0026】これによって、ウェハ31を、洗浄した後
の清浄度を維持したまま保管、輸送することができ、再
度洗浄等を行うことなく、直ちに後工程の処理等を実施
することが可能となる。したがって、歩留まりの向上
と、生産性の向上を図ることができる。As a result, the wafer 31 can be stored and transported while maintaining the cleanliness after cleaning, and it is possible to immediately carry out the subsequent processes and the like without performing cleaning again. . Therefore, it is possible to improve the yield and the productivity.
【0027】なお、上記した冷却工程においては、液体
窒素等の液体不活性ガスの他、アセトン−ドライアイス
等も使用できる。また、ノズル等から液体窒素等の液体
不活性ガスまたはアセトン−ドライアイス等で冷却した
ガスをウェハ表面上に噴射して凍結させる方法もある。In the cooling step described above, liquid inert gas such as liquid nitrogen and acetone-dry ice can be used. There is also a method in which a liquid inert gas such as liquid nitrogen or a gas cooled with acetone-dry ice is sprayed from a nozzle or the like onto the surface of the wafer to freeze it.
【0028】また、ウェハ22を凍結させる際、複数枚
を束ねた状態で急冷し、これらのウェハを一体的に凍結
させることも可能であり、これらのウェハ22が棒状に
凍結された状態で保管することも可能である。Further, when the wafers 22 are frozen, it is possible to rapidly cool the plurality of wafers in a bundle and freeze these wafers integrally. It is also possible to do so.
【0029】[0029]
【発明の効果】以上説明したように、本発明のウェハの
保管方法及びその輸送方法によれば、ウェハを洗浄した
後、清浄度を維持したまま保管又は輸送することができ
る。As described above, according to the wafer storage method and the wafer transportation method of the present invention, after cleaning the wafer, the wafer can be stored or transported while maintaining the cleanliness.
【図1】本発明の一実施例の構成を示すブロック図。FIG. 1 is a block diagram showing the configuration of an embodiment of the present invention.
【図2】本発明の一実施例の冷却工程を示す図。FIG. 2 is a diagram showing a cooling process according to an embodiment of the present invention.
【図3】本発明の一実施例のウェハ搬送装置の構成を示
す図。FIG. 3 is a diagram showing a configuration of a wafer transfer device according to an embodiment of the present invention.
Claims (6)
剤を付着させたまま前記洗浄剤を冷却して前記洗浄剤を
凍結させることにより、前記ウェハの表面を前記洗浄剤
の凍結層で覆うことを特徴とするウェハの保管方法。1. A wafer is cleaned with a cleaning agent, and the cleaning agent is cooled while the cleaning agent is adhered to freeze the cleaning agent, thereby covering the surface of the wafer with a frozen layer of the cleaning agent. A method of storing a wafer, which is characterized in that
ルコールまたはその混合物である請求項1記載のウェハ
の保管方法。2. The method for storing a wafer according to claim 1, wherein the cleaning agent is ultrapure water, isopropyl alcohol, or a mixture thereof.
を、冷凍手段を備えて内部を前記洗浄剤の凍結層の凝固
点より低い温度に保持した断熱性の収納容器に収納して
搬送することを特徴とするウェハの輸送方法。3. A wafer, the surface of which is covered with a frozen layer of a cleaning agent, is transferred by being accommodated in a heat-insulating storage container which is equipped with a freezing means and whose inside is kept at a temperature lower than the freezing point of the frozen layer of the cleaning agent. A method of transporting a wafer, which is characterized in that:
ルコールまたはその混合物である請求項3記載のウェハ
の輸送方法。4. The method of transporting a wafer according to claim 3, wherein the cleaning agent is ultrapure water, isopropyl alcohol, or a mixture thereof.
て、冷凍手段が収納容器に収納された寒剤であるウェハ
の輸送方法。5. The method of transporting wafers according to claim 3, wherein the freezing means is a cryogen stored in a storage container.
て、冷凍手段が収納容器に装着されたペルチェ電気素子
であるウェハの輸送方法。6. The method of transporting a wafer according to claim 3, wherein the freezing means is a Peltier electric element mounted in a storage container.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2972694A JP3654923B2 (en) | 1994-02-28 | 1994-02-28 | Wafer storage method and transportation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2972694A JP3654923B2 (en) | 1994-02-28 | 1994-02-28 | Wafer storage method and transportation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07240356A true JPH07240356A (en) | 1995-09-12 |
JP3654923B2 JP3654923B2 (en) | 2005-06-02 |
Family
ID=12284116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2972694A Expired - Fee Related JP3654923B2 (en) | 1994-02-28 | 1994-02-28 | Wafer storage method and transportation method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3654923B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1048756A4 (en) * | 1998-10-05 | 2006-06-21 | Ebara Corp | Substrate plating device |
JP2007250759A (en) * | 2006-03-15 | 2007-09-27 | Fujitsu Ltd | Method and unit for semiconductor wafer storage |
US7942976B2 (en) | 2006-11-24 | 2011-05-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
US8029622B2 (en) | 2006-09-13 | 2011-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus, liquid film freezing method and substrate processing method |
US8623146B2 (en) | 2011-01-20 | 2014-01-07 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method and substrate processing apparatus |
US9214331B2 (en) | 2011-01-06 | 2015-12-15 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4514700B2 (en) | 2005-12-13 | 2010-07-28 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
-
1994
- 1994-02-28 JP JP2972694A patent/JP3654923B2/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1048756A4 (en) * | 1998-10-05 | 2006-06-21 | Ebara Corp | Substrate plating device |
JP2007250759A (en) * | 2006-03-15 | 2007-09-27 | Fujitsu Ltd | Method and unit for semiconductor wafer storage |
JP4567622B2 (en) * | 2006-03-15 | 2010-10-20 | 富士通セミコンダクター株式会社 | Semiconductor wafer storage method |
US8029622B2 (en) | 2006-09-13 | 2011-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus, liquid film freezing method and substrate processing method |
US7942976B2 (en) | 2006-11-24 | 2011-05-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
US9214331B2 (en) | 2011-01-06 | 2015-12-15 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
US8623146B2 (en) | 2011-01-20 | 2014-01-07 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method and substrate processing apparatus |
Also Published As
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---|---|
JP3654923B2 (en) | 2005-06-02 |
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