JPH07235621A - Leadless chip carrier and manufacture thereof - Google Patents

Leadless chip carrier and manufacture thereof

Info

Publication number
JPH07235621A
JPH07235621A JP6049813A JP4981394A JPH07235621A JP H07235621 A JPH07235621 A JP H07235621A JP 6049813 A JP6049813 A JP 6049813A JP 4981394 A JP4981394 A JP 4981394A JP H07235621 A JPH07235621 A JP H07235621A
Authority
JP
Japan
Prior art keywords
insulating substrate
chip carrier
hole
leadless chip
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6049813A
Other languages
Japanese (ja)
Inventor
Teruo Hayashi
照雄 林
Eikou Yanagi
映行 柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP6049813A priority Critical patent/JPH07235621A/en
Publication of JPH07235621A publication Critical patent/JPH07235621A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Abstract

PURPOSE:To provide a leadless chip carrier and its mounting method with which the short circuit by fuse solder can be prevented. CONSTITUTION:A wiring circuit 35 is provided on the upper surface 15 of an insulated substrate 1, and a mounting pad 37 is provided on the lower surface of the insulated substrate 1. The side face of the insulated substrate is composed of an inclined slanting wall 16. A slanting circuit 36, with which the wiring circuit and a mounting pad are connected, is provided on the slanting wall 16. On the lower surface 17 of the insulated substrate, a wiring circuit can be provided. On a large type insulated substrate to be formed into dice, through holes are formed for cutting it into dice. Then, a plating treatment is conducted, a mask film is arranged for formation of pattern on the surface, and a parallel rays are made to irradiate on the mask film. Then, the mask film is removed, and an etching treatment is conducted. As a result, a slanting circuit can be formed together with a mounting pad.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は,溶融半田による短絡を
防止することができる,リードレスチップキャリア及び
その製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a leadless chip carrier capable of preventing a short circuit due to molten solder and a method for manufacturing the same.

【0002】[0002]

【従来技術】従来,リードレスチップキャリアとして
は,例えば,図15〜図17に示すごとく,絶縁基板9
1と,電子部品搭載部90と,配線回路55と,断面ス
ルーホール56と,実装用パッド57とを有するものが
ある。絶縁基板91の上面15には凹状の電子部品搭載
部90及び配線回路55が,その側面16には断面スル
ーホール56が,その下面17には実装用パッド57が
設けられている。
2. Description of the Related Art Conventionally, as a leadless chip carrier, for example, as shown in FIGS.
1, an electronic component mounting portion 90, a wiring circuit 55, a cross-section through hole 56, and a mounting pad 57. A concave electronic component mounting portion 90 and a wiring circuit 55 are provided on the upper surface 15 of the insulating substrate 91, a cross-section through hole 56 is provided on the side surface 16, and a mounting pad 57 is provided on the lower surface 17.

【0003】上記実装用パッド57は,図21に示すご
とく,半田6によりマザーボード8のパッド87の上に
接着される。図17,図21に示すごとく,電子部品4
は,ボンディングワイヤー40により配線回路55と接
続されており,更に断面スルーホール56,及び実装用
パッド57を介して,マザーボード8のパッド87へと
電気的に接続している。
The mounting pad 57 is bonded onto the pad 87 of the mother board 8 with solder 6 as shown in FIG. As shown in FIGS. 17 and 21, the electronic component 4
Are connected to the wiring circuit 55 by the bonding wire 40, and are further electrically connected to the pad 87 of the motherboard 8 through the through hole 56 in the cross section and the mounting pad 57.

【0004】次に,上記リードレスチップキャリアの製
造方法について説明する。まず,図18に示すごとく,
大型の絶縁基板9に,リードレスチップキャリアの形状
線96に沿って,穴明の方法により,複数のスルーホー
ル960を穿設する。また,絶縁基板9の上面15には
凹状の電子部品搭載部90を形成する。
Next, a method for manufacturing the leadless chip carrier will be described. First, as shown in FIG.
A plurality of through holes 960 are formed in the large-sized insulating substrate 9 along the shape line 96 of the leadless chip carrier by a drilling method. In addition, a concave electronic component mounting portion 90 is formed on the upper surface 15 of the insulating substrate 9.

【0005】次に,図19に示すごとく,スルーホール
960の内壁を金属メッキ膜560により被覆する。ま
た,絶縁基板9の上面15には配線回路55を,その下
面には実装用パッドを形成する。次に,図19に示す形
状線96に沿って,大型の絶縁基板9を切断して,個片
化する。これにより,絶縁基板91の側面16に断面ス
ルーホール56が形成されると共に,図15〜図17に
示すリードレスチップキャリアを得る。
Next, as shown in FIG. 19, the inner wall of the through hole 960 is covered with a metal plating film 560. Further, the wiring circuit 55 is formed on the upper surface 15 of the insulating substrate 9, and the mounting pad is formed on the lower surface thereof. Next, the large insulating substrate 9 is cut along the shape line 96 shown in FIG. 19 into individual pieces. As a result, the cross-sectional through hole 56 is formed on the side surface 16 of the insulating substrate 91, and the leadless chip carrier shown in FIGS. 15 to 17 is obtained.

【0006】[0006]

【解決しようとする課題】しかしながら,上記従来のリ
ードレスチップキャリアの製造方法においては,図18
に示すごとく,大型の絶縁基板9にスルーホール960
を正確な位置に穿設するのは,スルーホール960が小
径のため,困難である。そのため,図20に示すごと
く,断面スルーホール56が,配線回路及び実装用パッ
ド57に対して位置ずれを生じることがある。
However, in the conventional method of manufacturing the leadless chip carrier described above, the method shown in FIG.
As shown in FIG.
It is difficult to form the hole at an accurate position because the through hole 960 has a small diameter. Therefore, as shown in FIG. 20, the cross-sectional through hole 56 may be displaced with respect to the wiring circuit and the mounting pad 57.

【0007】この場合に,図21に示すごとく,実装用
パッド57とマザーボード8のパッド87とを半田6に
より溶融接合すると,溶融した半田6が断面スルーホー
ル56を被覆する金属メッキ膜560に引き寄せられ
る。そして,隣接する実装用パッド57上の半田6と融
着して,短絡60等の半田付け不良が発生するおそれが
ある。
In this case, as shown in FIG. 21, when the mounting pad 57 and the pad 87 of the mother board 8 are melt-bonded to each other by the solder 6, the melted solder 6 is attracted to the metal plating film 560 covering the through-hole 56 in cross section. To be Then, the solder 6 on the adjacent mounting pad 57 may be fused and a soldering defect such as a short circuit 60 may occur.

【0008】特に,近年,リードレスチップキャリアへ
の実装が高密度になり,断面スルーホール56のピッチ
が狭くなる傾向にある。そのため,上記のように,溶融
半田同志が短絡しやすくなった。本発明はかかる従来の
問題点に鑑み,溶融半田による短絡を防止することがで
きる,リードレスチップキャリア及びその製造方法を提
供しようとするものである。
In particular, in recent years, mounting on a leadless chip carrier has become highly dense, and the pitch of the through holes 56 in the cross section tends to be narrowed. Therefore, as mentioned above, the molten solders are easily short-circuited. In view of the above conventional problems, the present invention aims to provide a leadless chip carrier capable of preventing a short circuit due to molten solder and a method for manufacturing the same.

【0009】[0009]

【解決しようとする課題】本発明は,絶縁基板に電子部
品搭載部を設けたリードレスチップキャリアにおいて,
上記絶縁基板の上面は配線回路を有し,その下面は実装
用パッドを有してなり,かつ,上記絶縁基板の側面は,
傾斜した斜面壁から構成されており,上記斜面壁には,
上記配線回路と上記実装用パッドとを接続する斜面回路
を有していることを特徴とするリードレスチップキャリ
アにある。
The present invention provides a leadless chip carrier in which an electronic component mounting portion is provided on an insulating substrate,
The upper surface of the insulating substrate has a wiring circuit, the lower surface of the insulating substrate has mounting pads, and the side surface of the insulating substrate is
It is composed of sloped sloped walls, and the sloped walls are
The leadless chip carrier is characterized in that it has a slope circuit for connecting the wiring circuit and the mounting pad.

【0010】本発明において最も注目すべきことは,絶
縁基板の側面が傾斜した斜面壁から構成されているこ
と,該斜面壁には斜面回路が形成されていることであ
る。本発明において,上記絶縁基板の側面は,絶縁基板
の上面から下面へ,又は下面から上面へ広がる,傾斜し
た斜面壁からなる。上記斜面壁の表面には,斜面回路が
設けられている。該斜面回路は,絶縁基板の上面に設け
られた配線回路と,その下面に設けられた実装用パッド
とを接続している。上記実装用パッドは,マザーボード
等の外部素子の上に,半田接合される。
What is most noticeable in the present invention is that the side surface of the insulating substrate is composed of a sloped wall, and a sloped circuit is formed in the sloped wall. In the present invention, the side surface of the insulating substrate is an inclined wall that extends from the upper surface to the lower surface of the insulating substrate or from the lower surface to the upper surface. A slope circuit is provided on the surface of the slope wall. The sloped circuit connects a wiring circuit provided on the upper surface of the insulating substrate and a mounting pad provided on the lower surface thereof. The mounting pad is soldered onto an external element such as a mother board.

【0011】電子部品搭載部は,凹部,又はパッド部か
らなり,絶縁基板の上面,又は下面に設けられている。
電子部品搭載部には,電子部品が搭載される。該電子部
品は,ボンディングワイヤーにより,配線回路と接続さ
れる。配線回路は,少なくとも絶縁基板の上面に設けら
れているが,絶縁基板の下面にも設けることができる。
上記配線回路,実装用パッド,及び斜面回路は,銅等の
電導性材料からなる。
The electronic component mounting portion is composed of a concave portion or a pad portion and is provided on the upper surface or the lower surface of the insulating substrate.
Electronic components are mounted on the electronic component mounting portion. The electronic component is connected to a wiring circuit by a bonding wire. The wiring circuit is provided at least on the upper surface of the insulating substrate, but can also be provided on the lower surface of the insulating substrate.
The wiring circuit, the mounting pad, and the slope circuit are made of a conductive material such as copper.

【0012】上記絶縁基板は,1枚又は2枚以上であ
り,ガラス・エポキシ基板,ガラス・ポリイミド基板,
ガラスビスマレイミドトリアジン基板等の絶縁材料から
なる。2枚以上の絶縁基板の場合には,各絶縁基板の間
は,プリプレグ等の接着剤により接着されている。上記
絶縁基板には,電子部品から発生する熱を効率良く発散
させるために,放熱板等を設けることが好ましい。ま
た,絶縁基板には,絶縁基板の内部又は上面及び下面の
電気的導通を図るためのスルーホールを設けてもよい。
The above-mentioned insulating substrate is one or two or more, and includes a glass / epoxy substrate, a glass / polyimide substrate,
It is made of an insulating material such as glass bismaleimide triazine substrate. In the case of two or more insulating substrates, the insulating substrates are bonded together by an adhesive such as prepreg. It is preferable to provide a heat radiating plate or the like on the insulating substrate in order to efficiently dissipate heat generated from the electronic component. Further, the insulating substrate may be provided with through holes for electrically connecting the inside or upper and lower surfaces of the insulating substrate.

【0013】次に,上記リードレスチップキャリアを製
造する方法としては,例えば,個片化されるべき大型の
絶縁基板に,個片化切断用の貫通孔を形成し,かつ,上
記貫通孔の内壁は,傾斜した斜面壁からなる貫通孔形成
工程と,上記貫通孔内も含めて,上記絶縁基板の全表面
に,金属メッキ膜を施すと共に感光性のエッチングレジ
スト膜を形成する被覆工程と,上記絶縁基板の表面に配
線回路及び斜面回路のパターンを形成するためのマスク
フィルムを配置し,該マスクフィルムに対して平行光を
照射し,その後,上記マスクフィルムを除去する露光工
程と,上記大型の絶縁基板にエッチングを施して,上記
絶縁基板の上面には配線回路を,上記貫通孔内の斜面壁
には斜面回路を形成すると共に,上記絶縁基板の下面に
実装用パッドを形成するパターン形成工程と,上記貫通
孔に沿って上記大型の絶縁基板を切断して,個片化また
はフレーム化されたリードレスチップキャリアを作製す
る切断工程とからなることを特徴とするリードレスチッ
プキャリアの製造方法がある。
Next, as a method of manufacturing the leadless chip carrier, for example, a through hole for cutting into individual pieces is formed in a large insulating substrate to be divided into individual pieces, and the through holes are formed. The inner wall has a through-hole forming step composed of inclined sloped walls, and a coating step of forming a photosensitive etching resist film with a metal plating film on the entire surface of the insulating substrate including the inside of the through-hole. An exposure step of arranging a mask film for forming a pattern of a wiring circuit and a slope circuit on the surface of the insulating substrate, irradiating the mask film with parallel light, and then removing the mask film; The insulating substrate is etched to form a wiring circuit on the upper surface of the insulating substrate, a slope circuit on the slope wall in the through hole, and a mounting pad on the bottom surface of the insulation substrate. And a cutting step of cutting the large-sized insulating substrate along the through-holes to produce individualized or framed leadless chip carriers. There is a method of manufacturing a carrier.

【0014】以下,各工程について説明する。 貫通孔形成工程 まず,個片化されるべき大型の絶縁基板に,個片化切断
用の貫通孔を形成する。上記貫通孔の内壁は,傾斜した
斜面壁からなる。該斜面壁は,絶縁基板の上面から下面
へ,又は下面から上面へ広がるように,また,絶縁基板
の上面又は下面との当接部を鋭角とするように形成す
る。
Each step will be described below. Through-hole forming step First, a through-hole for cutting into individual pieces is formed on a large insulating substrate to be separated into individual pieces. The inner wall of the through hole is an inclined sloped wall. The sloped wall is formed so as to spread from the upper surface to the lower surface of the insulating substrate or from the lower surface to the upper surface, and the contact portion with the upper surface or the lower surface of the insulating substrate has an acute angle.

【0015】上記貫通孔は,例えば,長孔状のスリット
で,後述するリードレスチップキャリアの側面に相当す
る位置に形成される。貫通孔は,例えば,ザグリ加工に
より,大型の絶縁基板を穿設して形成される。上記絶縁
基板は,貫通孔形成により,リードレスチップキャリア
を構成する個片部と,該個片部を支持する支持部とに仕
切られる。
The through hole is, for example, an elongated slit and is formed at a position corresponding to a side surface of a leadless chip carrier described later. The through hole is formed by boring a large insulating substrate by, for example, counterboring. By forming the through hole, the insulating substrate is divided into an individual piece that constitutes the leadless chip carrier and a support section that supports the individual piece.

【0016】上記絶縁基板としては,前述した絶縁材料
を用いる。上記絶縁基板は,1枚又は2枚以上である。
2枚以上の場合には,各絶縁基板の間がプリプレグ接着
剤等の接着材により接着される。また,凹形状の電子部
品搭載部を形成する場合には,本工程において,ザグリ
加工により,絶縁基板の上面又は下面を穿設する。
The insulating material described above is used for the insulating substrate. The number of insulating substrates is one or more.
In the case of two or more sheets, the insulating substrates are bonded together by an adhesive material such as a prepreg adhesive. Further, when forming a concave electronic component mounting portion, the upper surface or the lower surface of the insulating substrate is bored by counterbore processing in this step.

【0017】被覆工程 次に,上記貫通孔内も含めて,上記絶縁基板の全表面
に,金属メッキ膜を施すと共に感光性のエッチングレジ
スト膜を形成する。即ち,上記絶縁基板の全表面にパネ
ルメッキを施し,金属メッキ膜を形成する。このとき,
上記貫通孔内にも金属メッキ膜を形成する。
Next, a metal plating film is formed and a photosensitive etching resist film is formed on the entire surface of the insulating substrate including the inside of the through hole. That is, the entire surface of the insulating substrate is subjected to panel plating to form a metal plating film. At this time,
A metal plating film is also formed in the through hole.

【0018】次に,上記貫通孔内も含めて,上記絶縁基
板の全表面に,感光性のエッチングレジスト膜を形成
し,上記金属メッキ膜の全表面を被覆する。該エッチン
グレジスト膜は,例えば,電着塗装方法などの湿式方法
により形成する。上記金属メッキ膜としては,銅等を用
いる。
Next, a photosensitive etching resist film is formed on the entire surface of the insulating substrate including the inside of the through hole to cover the entire surface of the metal plating film. The etching resist film is formed by a wet method such as an electrodeposition coating method. Copper or the like is used as the metal plating film.

【0019】露光工程 次に,上記絶縁基板の表面に,配線回路又は実装用パッ
ド及び斜面回路のパターンを形成するためのマスクフィ
ルムを配置する。上記マスクフィルムは,光を遮断する
遮光部と,光が透過する透過部とからなる。上記遮断部
は,絶縁基板の表面に形成されるパターンと同一形状の
パターン部と,上記貫通孔の上部又は下部に位置し,上
記パターン部から延設された延設部とからなる。
Exposure Step Next, a mask film for forming a wiring circuit or mounting pad and a slope circuit pattern is arranged on the surface of the insulating substrate. The mask film includes a light blocking portion that blocks light and a transparent portion that transmits light. The blocking part includes a pattern part having the same shape as the pattern formed on the surface of the insulating substrate, and an extension part located above or below the through hole and extending from the pattern part.

【0020】上記絶縁基板の表面に形成されるパターン
とは,上記絶縁基板の上面に形成される配線回路,又は
その下面に形成される実装用パッドをいう。また,絶縁
基板の下面にも配線回路を形成する場合には,実装用パ
ッド及び配線回路をいう。上記マスクフィルムは,絶縁
基板の上面又は下面において,少なくとも貫通孔の斜面
壁が見える側に配置される。具体的には,斜面壁が,上
記絶縁基板の上面から下面へひろがる場合には,絶縁基
板の上面に,マスクフィルムを配置する。逆に,下面か
ら上面へひろがる場合には,絶縁基板の下面に,マスク
フィルムを配置する。
The pattern formed on the surface of the insulating substrate means a wiring circuit formed on the upper surface of the insulating substrate or a mounting pad formed on the lower surface thereof. Further, when a wiring circuit is formed on the lower surface of the insulating substrate, it means a mounting pad and a wiring circuit. The mask film is arranged on the upper surface or the lower surface of the insulating substrate at least on the side where the sloped wall of the through hole is visible. Specifically, when the sloped wall extends from the upper surface to the lower surface of the insulating substrate, a mask film is arranged on the upper surface of the insulating substrate. On the other hand, when extending from the lower surface to the upper surface, a mask film is placed on the lower surface of the insulating substrate.

【0021】次に,上記マスクフィルムに対して平行光
を照射する。このとき,マスクフィルムのパターン部に
より絶縁基板の表面に光の影ができるとともに,マスク
フィルムの延設部により上記貫通孔の斜面壁にも光の影
ができて,その部分は露光しない未露光部分となる。上
記光照射の後,上記マスクフィルムを上記絶縁基板から
除去する。
Next, the mask film is irradiated with parallel light. At this time, the pattern portion of the mask film produces a shadow of light on the surface of the insulating substrate, and the extended portion of the mask film also produces a shadow of light on the sloped wall of the through hole, which is not exposed. It becomes a part. After the light irradiation, the mask film is removed from the insulating substrate.

【0022】パターン形成工程 次に,上記大型の絶縁基板に現像液を接触させる。これ
により,上記エッチングレジスト膜の未露光部分はその
まま残り,その他の露光部分は除去されて金属メッキ膜
が露出する。次いで,金属メッキ膜の露光部分をエッチ
ングにより除去する。これにより,絶縁基板の上面又は
下面,及び貫通孔内の斜面壁に,パターンが形成され
る。
Pattern Forming Step Next, a developing solution is brought into contact with the large-sized insulating substrate. As a result, the unexposed portion of the etching resist film remains as it is, and the other exposed portions are removed to expose the metal plating film. Then, the exposed portion of the metal plating film is removed by etching. As a result, a pattern is formed on the upper surface or the lower surface of the insulating substrate and the sloped wall in the through hole.

【0023】次に,上記パターンの表面に残存するエッ
チングレジスト膜を除去する。これにより,マスクフィ
ルムを絶縁基板の上面に配置した場合には,絶縁基板の
上面に配線回路が,貫通孔内の斜面壁に斜面回路が形成
される。一方,マスクフィルムを絶縁基板の下面に配置
した場合には,絶縁基板の下面に実装用パッドが,貫通
孔内の斜面壁に斜面回路が形成される。
Next, the etching resist film remaining on the surface of the pattern is removed. As a result, when the mask film is arranged on the upper surface of the insulating substrate, the wiring circuit is formed on the upper surface of the insulating substrate and the slope circuit is formed on the slope wall in the through hole. On the other hand, when the mask film is arranged on the lower surface of the insulating substrate, the mounting pads are formed on the lower surface of the insulating substrate and the slope circuit is formed on the slope wall in the through hole.

【0024】次に,絶縁基板の下面又は上面において,
まだパターンが形成されていない側に,実装用パッド又
は配線回路等のパターンを形成する。その形成方法は,
上記と同様に,マスクフィルムを用いる方法が簡便であ
る。更に,簡便な方法として,絶縁基板の上面及び下面
の双方に,マスクフィルムを配置し,その両側から平行
光を照射する方法がある。この方法によれば,1回の露
光処理により,絶縁基板の全表面にパターンを形成する
ことができる。
Next, on the lower surface or the upper surface of the insulating substrate,
A pattern such as a mounting pad or a wiring circuit is formed on the side where no pattern is formed yet. The formation method is
Similar to the above, the method using a mask film is simple. Further, as a simple method, there is a method of arranging mask films on both the upper surface and the lower surface of the insulating substrate and irradiating parallel light from both sides thereof. According to this method, a pattern can be formed on the entire surface of the insulating substrate by a single exposure process.

【0025】切断工程 次に,上記貫通孔に沿って上記絶縁基板を切断して,個
片化またはフレーム化されたリードレスチップキャリア
を作製する。上記切断に当たって,ダイシングソー等が
用いられる。大型の絶縁基板を貫通孔に沿って切断する
と,その内部の斜面壁が,個片化された絶縁基板の側面
を構成することになる。
Cutting Step Next, the insulating substrate is cut along the through holes to produce individualized or framed leadless chip carriers. A dicing saw or the like is used for the above cutting. When a large insulating substrate is cut along the through hole, the inclined wall inside the large insulating substrate constitutes the side surface of the individual insulating substrate.

【0026】また,絶縁基板の表面に放熱板を設ける場
合には,実装用パッド又は配線回路と同様の方法により
形成することができる。また,絶縁基板にスルーホール
を設ける場合には,大型の絶縁基板にスルーホールを穿
設し,その内部を金属メッキ膜により被覆する方法によ
り作成される。
Further, when the heat dissipation plate is provided on the surface of the insulating substrate, it can be formed by the same method as the mounting pad or the wiring circuit. When a through hole is provided in the insulating substrate, the through hole is formed in a large insulating substrate and the inside is covered with a metal plating film.

【0027】[0027]

【作用及び効果】本発明のリードレスチップキャリアに
おいては,絶縁基板の側面が傾斜した斜面壁から構成さ
れており,その斜面壁の表面には斜面回路が形成されて
いる。該斜面回路は,後述するごとく,従来のように絶
縁基板の側面に断面スルーホールを設ける場合に比較し
て,正確な位置に形成される。そのため,実装用パッド
とマザーボードのパッドとを半田により溶融接合したと
き,溶融半田が隣接する実装用パッドや斜面回路に引き
寄せられることがない。従って,隣接する半田同志が短
絡するおそれもない。
In the leadless chip carrier of the present invention, the side surface of the insulating substrate is composed of a sloped wall, and a sloped circuit is formed on the surface of the sloped wall. As will be described later, the slope circuit is formed at an accurate position as compared with the conventional case where a through hole is provided on the side surface of the insulating substrate. Therefore, when the mounting pad and the motherboard pad are melt-bonded by solder, the molten solder is not attracted to the adjacent mounting pad or slope circuit. Therefore, there is no possibility that adjacent solders will be short-circuited.

【0028】次に,本発明のリードレスチップキャリア
の製造方法においては,マスクフィルムを用いた露光法
により絶縁基板の表面にパターンを形成している。マス
クフィルムには,絶縁基板に形成されるべき配線回路や
実装用パッド等のパターンと同一形状のパターン部が設
けられている。そのため,上記マスクフィルムの外方か
ら平行光を照射した場合,その遮光部が覆う絶縁基板の
上面又は下面には,遮光部と同一形状の光の影が形成さ
れる。
Next, in the method for manufacturing a leadless chip carrier of the present invention, a pattern is formed on the surface of the insulating substrate by an exposure method using a mask film. The mask film is provided with a pattern portion having the same shape as a pattern of a wiring circuit, a mounting pad, etc. to be formed on the insulating substrate. Therefore, when parallel light is irradiated from the outside of the mask film, a shadow of light having the same shape as the light shielding portion is formed on the upper surface or the lower surface of the insulating substrate covered by the light shielding portion.

【0029】また,上記マスクフィルムには,上記パタ
ーン部から延設された延設部が設けられている。該延設
部は,絶縁基板の貫通孔の上を覆っている。そのため,
上記のように,平行光を照射した場合,上記絶縁基板の
上面又は下面の光の影と連続した光の影が形成される。
上記絶縁基板の上面又は下面,及び斜面壁において,上
記光の影となった部分は,その後のエッチング処理によ
り,配線回路又は実装用パッド,及び斜面回路等のパタ
ーンとして残る。
Further, the mask film is provided with an extension portion extending from the pattern portion. The extended portion covers the through hole of the insulating substrate. for that reason,
As described above, when the parallel light is applied, a shadow of light continuous with the shadow of light on the upper surface or the lower surface of the insulating substrate is formed.
On the upper surface or the lower surface of the insulating substrate and the sloped wall, the shadowed portion of the light remains as a pattern of a wiring circuit or a mounting pad, a sloped circuit, or the like by the subsequent etching process.

【0030】従って,上記の露光方法によれば,絶縁基
板の正確な位置に,配線回路や実装用パッド等のパター
ンを形成することができる。また,絶縁基板の斜面壁に
おいて上記パターンと連結した位置には,斜面回路が形
成される。それ故,絶縁基板の上面又は下面のパターン
だけでなく,斜面壁においても正確な位置に斜面回路を
形成することができる。従って,斜面回路が,配線回路
や実装用パッドに対して位置ずれを生じるという問題も
ない。
Therefore, according to the above-mentioned exposure method, it is possible to form a pattern such as a wiring circuit or a mounting pad at an accurate position on the insulating substrate. Further, a slope circuit is formed at a position connected to the pattern on the slope wall of the insulating substrate. Therefore, not only the pattern on the upper surface or the lower surface of the insulating substrate, but also the slope circuit can be formed at an accurate position on the slope wall. Therefore, there is no problem that the slope circuit is displaced with respect to the wiring circuit or the mounting pad.

【0031】その結果,本発明の製造方法により作製さ
れたリードレスチップキャリアは,上記のごとく,マザ
ーボードの上に実装する際に,溶融半田による短絡が発
生するおそれもない。本発明によれば,溶融半田による
短絡を防止することができる,リードレスチップキャリ
ア及びその製造方法を提供することができる。
As a result, the leadless chip carrier manufactured by the manufacturing method of the present invention is free from the possibility of short circuit due to molten solder when it is mounted on the motherboard as described above. According to the present invention, it is possible to provide a leadless chip carrier that can prevent a short circuit due to molten solder and a method for manufacturing the same.

【0032】[0032]

【実施例】【Example】

実施例1 本発明の実施例にかかるリードレスチップキャリアにつ
いて,図1〜図12を用いて説明する。本例のリードレ
スチップキャリア7は,図1,図3,図4に示すごと
く,絶縁基板1に電子部品搭載部19を設けている。絶
縁基板1の上面15は配線回路35を有し,その下面1
7は実装用パッド37を有している。絶縁基板1の側面
は,傾斜した斜面壁16から構成されており,斜面壁1
6には,配線回路35と実装用パッド37とを接続する
斜面回路36を有している。
Example 1 A leadless chip carrier according to an example of the present invention will be described with reference to FIGS. In the leadless chip carrier 7 of this example, as shown in FIGS. 1, 3, and 4, an electronic component mounting portion 19 is provided on the insulating substrate 1. The upper surface 15 of the insulating substrate 1 has a wiring circuit 35, and its lower surface 1
7 has a mounting pad 37. The side surface of the insulating substrate 1 is composed of a sloped wall 16 which is inclined.
6 has a slope circuit 36 for connecting the wiring circuit 35 and the mounting pad 37.

【0033】斜面壁16は,絶縁基板1の上面15から
下面17へ広がるように傾斜している。斜面壁16と絶
縁基板1の下面17との当接部分は,鋭角に形成されて
いる。実装用パッド37は,図2に示すごとく,マザー
ボード8のパッド87の上に,半田6により接合され
る。
The inclined wall 16 is inclined so as to spread from the upper surface 15 of the insulating substrate 1 to the lower surface 17. The contact portion between the sloped wall 16 and the lower surface 17 of the insulating substrate 1 is formed at an acute angle. The mounting pad 37 is joined to the pad 87 of the mother board 8 by the solder 6 as shown in FIG.

【0034】電子部品搭載部19は,凹状であり,絶縁
基板1の上面15に設けられている。電子部品搭載部1
9には,図1に示すごとく,電子部品4が搭載される。
電子部品4は,ボンディングワイヤー40により,配線
回路35と接続される。配線回路35,実装用パッド3
7,及び斜面回路36は,銅等の電導性材料からなる。
絶縁基板1は,ガラス・エポキシ基板からなる。
The electronic component mounting portion 19 has a concave shape and is provided on the upper surface 15 of the insulating substrate 1. Electronic component mounting section 1
An electronic component 4 is mounted on 9 as shown in FIG.
The electronic component 4 is connected to the wiring circuit 35 by the bonding wire 40. Wiring circuit 35, mounting pad 3
7 and the slope circuit 36 are made of a conductive material such as copper.
The insulating substrate 1 is made of a glass / epoxy substrate.

【0035】次に,上記リードレスチップキャリア7を
製造する方法について,図5〜図12を用いて説明す
る。 貫通孔形成工程 まず,図5,図6に示すごとく,個片化されるべき大型
の絶縁基板10に,リードレスチップキャリアの寸法線
165に沿ってその4方向に,個片化切断用の貫通孔1
1を形成する。
Next, a method for manufacturing the leadless chip carrier 7 will be described with reference to FIGS. Through-hole forming step First, as shown in FIGS. 5 and 6, a large-sized insulating substrate 10 to be singulated is cut into four pieces along the dimension line 165 of the leadless chip carrier for cutting into individual pieces. Through hole 1
1 is formed.

【0036】貫通孔11の内壁は,傾斜した斜面壁16
からなる。該斜面壁16は,絶縁基板1の上面15から
下面17へ広がるように,また,下面17との当接部を
鋭角とするように形成する。貫通孔11は,例えば,長
孔状のスリットで,後述するリードレスチップキャリア
の側面に相当する位置に形成される。貫通孔11は,ザ
グリ加工により,大型の絶縁基板10を穿設して形成さ
れる。
The inner wall of the through hole 11 is an inclined slope wall 16
Consists of. The sloped wall 16 is formed so as to spread from the upper surface 15 to the lower surface 17 of the insulating substrate 1 and to have an acute contact portion with the lower surface 17. The through hole 11 is, for example, a slit having a long hole shape, and is formed at a position corresponding to a side surface of a leadless chip carrier described later. The through hole 11 is formed by boring a large insulating substrate 10 by counterboring.

【0037】絶縁基板10は,貫通孔11の形成によ
り,リードレスチップキャリアを構成する個片部71
と,該個片部71を支持する支持部72とに仕切られ
る。絶縁基板10としては,前述した絶縁材料を用い
る。次に,図7に示すごとく,大型の絶縁基板10の上
面15における,その略中央部にザグリ等の加工によ
り,電子部品搭載部19を形成する。
The insulating substrate 10 is formed with the through-holes 11 so that the individual pieces 71 constituting the leadless chip carrier are formed.
And a support portion 72 that supports the individual piece portion 71. The insulating material described above is used for the insulating substrate 10. Next, as shown in FIG. 7, an electronic component mounting portion 19 is formed on the upper surface 15 of the large-sized insulating substrate 10 by machining such as a countersink at a substantially central portion thereof.

【0038】被覆工程 次に,図8に示すごとく,貫通孔11内も含めて,絶縁
基板10の全表面に,金属メッキ膜3を施すと共に感光
性のエッチングレジスト膜30を形成する。即ち,絶縁
基板10の全表面にパネルメッキを施し,金属メッキ膜
3を形成する。このとき,貫通孔11内にも金属メッキ
膜3を形成する。
Covering Step Next, as shown in FIG. 8, the metal plating film 3 and the photosensitive etching resist film 30 are formed on the entire surface of the insulating substrate 10 including the inside of the through hole 11. That is, the entire surface of the insulating substrate 10 is panel-plated to form the metal plating film 3. At this time, the metal plating film 3 is also formed in the through hole 11.

【0039】次に,貫通孔11内も含めて,絶縁基板1
0の全表面に,感光性のエッチングレジスト膜30を形
成し,金属メッキ膜3の全表面を被覆する。該エッチン
グレジスト膜30は,電着塗装方法などの湿式方法によ
り形成する。金属メッキ膜3としては,銅等を用いる。
Next, including the inside of the through hole 11, the insulating substrate 1
A photosensitive etching resist film 30 is formed on the entire surface of No. 0 to cover the entire surface of the metal plating film 3. The etching resist film 30 is formed by a wet method such as an electrodeposition coating method. Copper or the like is used as the metal plating film 3.

【0040】露光工程 次に,図9,図10に示すごとく,絶縁基板10の上面
15及び下面17に,配線回路,斜面回路,及び実装用
パッドのパターンを形成するためのマスクフィルム2
1,22をそれぞれ配置する。マスクフィルム21,2
2は,光を遮断する遮光部210,220と,光が透過
する透過部213,223とを有している。
Exposure Step Next, as shown in FIGS. 9 and 10, a mask film 2 for forming patterns of wiring circuits, slope circuits, and mounting pads on the upper surface 15 and the lower surface 17 of the insulating substrate 10.
1 and 22 are arranged respectively. Mask film 21,2
Reference numeral 2 has light-shielding portions 210 and 220 that block light, and transmission portions 213 and 223 that transmit light.

【0041】マスクフィルム21の遮光部210は,絶
縁基板10の上面15に形成される配線回路と同一形状
のパターン部211と,貫通孔11の上方に位置し,上
記パターン部211から延設された延設部212とから
なる。マスクフィルム22の遮光部220は,絶縁基板
10の下面17に形成される実装用パッドと同一形状の
パターン部221と,貫通孔11の下方に位置し,上記
パターン部221から延設された延設部222とからな
る。マスクフィルム21,22は,大型の絶縁基板10
の上面15及び下面17にそれぞれ配置される。
The light shielding portion 210 of the mask film 21 is located above the pattern portion 211 having the same shape as the wiring circuit formed on the upper surface 15 of the insulating substrate 10 and the through hole 11 and extended from the pattern portion 211. And an extended portion 212. The light shielding part 220 of the mask film 22 is located below the through hole 11 and the pattern part 221 having the same shape as the mounting pad formed on the lower surface 17 of the insulating substrate 10, and extends from the pattern part 221. The installation part 222. The mask films 21 and 22 are large-sized insulating substrates 10
Are arranged on the upper surface 15 and the lower surface 17, respectively.

【0042】次に,マスクフィルム21,22に対して
その上方,下方から平行光28を照射する。このとき,
図10に示すごとく,遮光部210,220のパターン
部211,221により絶縁基板10の上面15及び下
面16に光の影301ができる。また,遮光部210,
220の延設部212,222により,貫通孔11の斜
面壁16にも光の影302ができて,その部分は露光し
ない未露光部分となる。その後,マスクフィルム21,
22を絶縁基板10から除去する。
Next, the mask films 21 and 22 are irradiated with parallel light 28 from above and below. At this time,
As shown in FIG. 10, light shielding 301 is formed on the upper surface 15 and the lower surface 16 of the insulating substrate 10 by the pattern portions 211 and 221 of the light shielding portions 210 and 220. In addition, the light blocking portion 210,
Due to the extending portions 212 and 222 of 220, a shadow 302 of light is also formed on the slope wall 16 of the through hole 11, and that portion becomes an unexposed portion that is not exposed. After that, the mask film 21,
22 is removed from the insulating substrate 10.

【0043】パターン形成工程 次に,図11に示すごとく,絶縁基板10を現像液に接
触させて,エッチングレジスト膜30の未露光部分をそ
のまま残し,その他の露光部分は除去して,金属メッキ
膜3を露出させる。次に,金属メッキ膜3の露光部分を
エッチングにより除去する。次いで,残った金属メッキ
膜3の表面を覆うエッチングレジスト膜30を除去す
る。これにより,図12に示すごとく,絶縁基板10の
上面15,下面17,及び斜面壁16に,配線回路3
5,実装用パッド37,及び斜面回路36が形成され
る。
Pattern Forming Step Next, as shown in FIG. 11, the insulating substrate 10 is brought into contact with a developing solution to leave the unexposed portion of the etching resist film 30 as it is and remove the other exposed portions to form a metal plating film. Expose 3 Next, the exposed portion of the metal plating film 3 is removed by etching. Then, the etching resist film 30 covering the surface of the remaining metal plating film 3 is removed. As a result, as shown in FIG. 12, the wiring circuit 3 is formed on the upper surface 15, the lower surface 17, and the sloped wall 16 of the insulating substrate 10.
5, the mounting pad 37 and the slope circuit 36 are formed.

【0044】切断工程 次に,図12に示すごとく,ダイシングソーを用いて,
貫通孔11内の寸法線165に沿って絶縁基板10を切
断する。これにより,図1に示す個片化された絶縁基板
1が得られる。また,貫通孔11の内部の斜面壁16
が,個片化された絶縁基板1の側面を構成することにな
る。
Cutting Step Next, as shown in FIG. 12, using a dicing saw,
The insulating substrate 10 is cut along the dimension line 165 in the through hole 11. As a result, the individualized insulating substrate 1 shown in FIG. 1 is obtained. In addition, the slope wall 16 inside the through hole 11
Form the side surface of the individualized insulating substrate 1.

【0045】次に,本例の作用効果について説明する。
本例のリードレスチップキャリア7においては,図1〜
図4に示すごとく,絶縁基板1の側面が傾斜した斜面壁
16から構成されており,その斜面壁16の表面には斜
面回路36が形成されている。該斜面回路36は,後述
するごとく,従来のように絶縁基板の側面に断面スルー
ホールを設ける場合に比較して,正確な位置に形成され
る。
Next, the function and effect of this example will be described.
In the leadless chip carrier 7 of this example, FIG.
As shown in FIG. 4, the side surface of the insulating substrate 1 is composed of a sloped wall 16, and a slope circuit 36 is formed on the surface of the sloped wall 16. As will be described later, the slope circuit 36 is formed at an accurate position as compared with the conventional case where a cross-sectional through hole is provided on the side surface of the insulating substrate.

【0046】そのため,図2に示すごとく,実装用パッ
ド37とマザーボード8のパッド87とを半田6により
溶融接合したとき,溶融した半田6が隣接する実装用パ
ッド37や斜面回路36に引き寄せられることがない。
従って,隣接する半田同志が短絡するおそれもない。
Therefore, as shown in FIG. 2, when the mounting pad 37 and the pad 87 of the mother board 8 are melt-bonded by the solder 6, the melted solder 6 is attracted to the mounting pad 37 and the slope circuit 36 adjacent to each other. There is no.
Therefore, there is no possibility that adjacent solders will be short-circuited.

【0047】次に,本例のリードレスチップキャリアの
製造方法においては,図9,図10に示すごとく,マス
クフィルム21,22を用いた露光法により絶縁基板1
0の表面にパターンを形成している。マスクフィルム2
1,22には,絶縁基板10に形成されるべき配線回路
35や実装用パッド37のパターンと同一形状のパター
ン部211,221が設けられている。そのため,マス
クフィルム21,22の外方から平行光28を照射した
場合,そのパターン部211,221が覆う絶縁基板1
0の上面15及び下面17に,上記パターン部と同一形
状の光の影301が形成される。
Next, in the method of manufacturing the leadless chip carrier of this example, as shown in FIGS. 9 and 10, the insulating substrate 1 is formed by the exposure method using the mask films 21 and 22.
A pattern is formed on the surface of 0. Mask film 2
Pattern portions 211 and 221 having the same shapes as the patterns of the wiring circuit 35 and the mounting pad 37 to be formed on the insulating substrate 10 are provided on the substrates 1 and 22. Therefore, when the parallel light 28 is radiated from the outside of the mask films 21 and 22, the insulating substrate 1 covered by the pattern portions 211 and 221.
A shadow 301 of light having the same shape as the pattern portion is formed on the upper surface 15 and the lower surface 17 of 0.

【0048】また,マスクフィルム21,22には,パ
ターン部211,221から延設された延設部212,
222が設けられている。該延設部は,絶縁基板10の
貫通孔11の上部及び下部上を覆っている。そのため,
平行光28を照射した場合,絶縁基板10の上面15及
び下面17の光の影301と連続した光の影302が,
斜面壁16にも形成される。
Further, the mask films 21 and 22 have extended portions 212 extending from the pattern portions 211 and 221.
222 is provided. The extended portion covers the upper portion and the lower portion of the through hole 11 of the insulating substrate 10. for that reason,
When the parallel light 28 is irradiated, the light shadow 301 of the upper surface 15 and the lower surface 17 of the insulating substrate 10 and the continuous light shadow 302 are
It is also formed on the slope wall 16.

【0049】上記の光の影301,302となった部分
は,その後のエッチング処理により,配線回路35又は
実装用パッド37,及び斜面回路36のパターンとして
残る。それ故,絶縁基板10の正確な位置に,配線回路
35や実装用パッド37を形成することができる。
The portions having the above-mentioned light shadows 301 and 302 remain as a pattern of the wiring circuit 35 or the mounting pad 37 and the slope circuit 36 by the subsequent etching process. Therefore, the wiring circuit 35 and the mounting pad 37 can be formed at accurate positions on the insulating substrate 10.

【0050】また,絶縁基板10の斜面壁16において
パターンと連結した位置には,斜面回路36が形成され
る。それ故,絶縁基板10の上面15及び下面17のパ
ターンだけでなく,斜面壁16においても正確な位置に
斜面回路36を形成することができる。従って,斜面回
路36が,配線回路35及び実装用パッド37に対して
位置ずれを生じるという問題もない。その結果,本例の
製造方法により作製されたリードレスチップキャリア
は,図2に示すごとく,マザーボード8の上に実装する
際に,溶融半田による短絡が発生するおそれもない。
A slope circuit 36 is formed on the slope wall 16 of the insulating substrate 10 at a position connected to the pattern. Therefore, not only the patterns on the upper surface 15 and the lower surface 17 of the insulating substrate 10 but also the slope circuit 36 can be formed at accurate positions on the slope wall 16. Therefore, there is no problem that the slope circuit 36 is displaced with respect to the wiring circuit 35 and the mounting pad 37. As a result, as shown in FIG. 2, the leadless chip carrier manufactured by the manufacturing method of this example does not have a possibility of short circuit due to molten solder when it is mounted on the mother board 8.

【0051】また,本例においては,絶縁基板10の上
面15及び下面17に,パターン形成用のマスクフィル
ム21,22を配置し,その両側から同時に平行光28
を照射している。そのため,パターンを正確に形成する
ことができるだけでなく,迅速かつ簡便に,パターンの
形成をすることができる。
Further, in this example, mask films 21 and 22 for pattern formation are arranged on the upper surface 15 and the lower surface 17 of the insulating substrate 10, and the parallel light 28 is simultaneously irradiated from both sides thereof.
Is irradiating. Therefore, not only the pattern can be accurately formed, but also the pattern can be formed quickly and easily.

【0052】実施例2 本例のリードレスチップキャリア7は,図13に示すご
とく,絶縁基板1の上面15だけでなく,下面17にも
配線回路38を設けている。また,電子部品搭載部19
の内部にも配線回路34が設けられている。上記リード
レスチップキャリア7を製造するに当たっては,絶縁基
板の上面に配置されるマスクフィルムに,配線回路3
4,35と同一形状のパターン部を有する遮光部を設け
る(図9,図10参照)。また,絶縁基板の下面に配置
されるマスクフィルムに,実装用パッド37,配線回路
38と同一形状のパターン部を有する遮光部を設ける。
そして,これらのマスクフィルムを用いて,露光処理を
行う。
Embodiment 2 In the leadless chip carrier 7 of this embodiment, as shown in FIG. 13, a wiring circuit 38 is provided not only on the upper surface 15 of the insulating substrate 1 but also on the lower surface 17. In addition, the electronic component mounting unit 19
A wiring circuit 34 is also provided inside. In manufacturing the leadless chip carrier 7, the wiring circuit 3 is formed on the mask film arranged on the upper surface of the insulating substrate.
A light shielding portion having a pattern portion having the same shape as 4, 35 is provided (see FIGS. 9 and 10). Further, the mask film arranged on the lower surface of the insulating substrate is provided with a light shielding portion having a pattern portion having the same shape as the mounting pad 37 and the wiring circuit 38.
Then, an exposure process is performed using these mask films.

【0053】その他は,実施例1と同様である。本例に
おいては,絶縁基板1の下面17及び電子部品搭載部1
9の内部にも,配線回路38,34を設けている。その
ため,より高密度実装化を図ることができる。その他
は,実施例1と同様の効果を得ることができる。
Others are the same as those in the first embodiment. In this example, the lower surface 17 of the insulating substrate 1 and the electronic component mounting portion 1
Wiring circuits 38 and 34 are also provided inside 9. Therefore, higher density mounting can be achieved. Other than that, the same effects as those of the first embodiment can be obtained.

【0054】実施例3 本例のリードレスチップキャリア7は,図14に示すご
とく,絶縁基板1の側面に,下面17から上面15へひ
ろがるように傾斜した斜面壁169を設けている。該斜
面壁169の上には,配線回路35と実装用パッド37
と接続した斜面回路36を設けている。
Embodiment 3 In the leadless chip carrier 7 of this embodiment, as shown in FIG. 14, a sloped wall 169 is provided on the side surface of the insulating substrate 1 so as to extend from the lower surface 17 to the upper surface 15. A wiring circuit 35 and a mounting pad 37 are provided on the slope wall 169.
Is provided with a slope circuit 36 connected thereto.

【0055】斜面回路36のパターンは,露光工程にお
いて,実装用パッド37とともに,絶縁基板1の下面に
配置されたマスクフィルムにより形成される(図9,図
10参照)。即ち,斜面回路36は,上記マスクフィル
ムの遮光部により,平行光の影ができ,その影の部分が
エッチング処理により残ったものである。その他は,実
施例1と同様である。本例においても,実施例1と同様
の効果を得ることができる。
The pattern of the slope circuit 36 is formed by the mask film disposed on the lower surface of the insulating substrate 1 together with the mounting pad 37 in the exposure process (see FIGS. 9 and 10). That is, in the slope circuit 36, a shadow of parallel light is formed by the light-shielding portion of the mask film, and the shadow portion is left by the etching process. Others are the same as in the first embodiment. Also in this example, the same effect as that of the first embodiment can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例1のリードレスチップキャリアの断面
図。
FIG. 1 is a sectional view of a leadless chip carrier according to a first embodiment.

【図2】実施例1の,マザーボードに実装されたリード
レスチップキャリアの側面図。
FIG. 2 is a side view of the leadless chip carrier mounted on the motherboard according to the first embodiment.

【図3】図1のリードレスチップキャリアの平面図。FIG. 3 is a plan view of the leadless chip carrier shown in FIG.

【図4】図1のリードレスチップキャリアの裏面図。FIG. 4 is a rear view of the leadless chip carrier shown in FIG.

【図5】実施例1のリードレスチップキャリアの製造方
法における,大型の絶縁基板への貫通孔形成工程を示す
説明図。
FIG. 5 is an explanatory view showing a through hole forming step in a large insulating substrate in the method for manufacturing the leadless chip carrier according to the first embodiment.

【図6】図5の,大型の絶縁基板の平面図。6 is a plan view of the large insulating substrate of FIG.

【図7】図5,図6に続く,貫通孔形成工程の説明図。FIG. 7 is an explanatory view of a through hole forming step following FIGS. 5 and 6;

【図8】図7に続く,被覆工程の説明図。FIG. 8 is an explanatory view of the coating process following FIG. 7.

【図9】図8に続く,露光工程における,大型の絶縁基
板の断面図。
FIG. 9 is a cross-sectional view of a large insulating substrate in the exposure process following FIG.

【図10】図8に続く,露光工程における,大型の絶縁
基板の要部斜視図。
FIG. 10 is a perspective view of a main part of a large-sized insulating substrate in the exposure process following FIG.

【図11】図9,図10に続く,パターン形成工程の説
明図。
FIG. 11 is an explanatory diagram of the pattern forming process following FIGS. 9 and 10;

【図12】図11に続く,切断工程の説明図。FIG. 12 is an explanatory view of the cutting process following FIG. 11.

【図13】実施例2のリードレスチップキャリアの断面
図。
FIG. 13 is a cross-sectional view of the leadless chip carrier of Example 2.

【図14】実施例3のリードレスチップキャリアの断面
図。
FIG. 14 is a cross-sectional view of the leadless chip carrier of Example 3.

【図15】従来例のリードレスチップキャリアの平面
図。
FIG. 15 is a plan view of a conventional leadless chip carrier.

【図16】図15のリードレスチップキャリアの裏面
図。
16 is a rear view of the leadless chip carrier shown in FIG.

【図17】図15のA−A線矢視断面図。17 is a sectional view taken along the line AA of FIG.

【図18】従来例のリードレスチップキャリアの製造方
法を示す説明図。
FIG. 18 is an explanatory view showing a method for manufacturing a leadless chip carrier of a conventional example.

【図19】図18に続く,製造方法の説明図。FIG. 19 is an explanatory diagram of the manufacturing method following FIG. 18.

【図20】従来例のリードレスチップキャリアの,裏面
側からみた要部斜視図。
FIG. 20 is a perspective view of a main part of a conventional leadless chip carrier as viewed from the back surface side.

【図21】従来例のリードレスチップキャリアの問題点
を指摘する説明図。
FIG. 21 is an explanatory view for pointing out a problem of the conventional leadless chip carrier.

【符号の説明】[Explanation of symbols]

1,10...絶縁基板, 11...貫通孔, 15...上面, 16...斜面壁, 17...下面, 19...電子部品搭載部, 21,22...マスクフィルム, 34,35,38...配線回路, 36...斜面回路, 37...実装用パッド, 4...電子部品, 6...半田, 7...リードレスチップキャリア, 8...マザーボード, 1,10. . . Insulating substrate, 11. . . Through hole, 15. . . Top surface, 16. . . Slope wall, 17. . . Bottom surface, 19. . . Electronic component mounting part, 21, 22. . . Mask film, 34, 35, 38. . . Wiring circuit, 36. . . Slope circuit, 37. . . Mounting pad, 4. . . Electronic components, 6. . . Solder, 7. . . Leadless chip carrier, 8. . . Motherboard,

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板に電子部品搭載部を設けたリー
ドレスチップキャリアにおいて,上記絶縁基板の上面は
配線回路を有し,その下面は実装用パッドを有してな
り,かつ,上記絶縁基板の側面は,傾斜した斜面壁から
構成されており,上記斜面壁には,上記配線回路と上記
実装用パッドとを接続する斜面回路を有していることを
特徴とするリードレスチップキャリア。
1. A leadless chip carrier in which an electronic component mounting portion is provided on an insulating substrate, wherein an upper surface of the insulating substrate has a wiring circuit, and a lower surface of the insulating substrate has a mounting pad, and the insulating substrate. A side surface of the leadless chip carrier is formed of an inclined sloped wall, and the sloped wall has a sloped circuit for connecting the wiring circuit and the mounting pad.
【請求項2】 請求項1において,上記絶縁基板の下面
には,配線回路が設けられていることを特徴とするリー
ドレスチップキャリア。
2. The leadless chip carrier according to claim 1, wherein a wiring circuit is provided on the lower surface of the insulating substrate.
【請求項3】 個片化されるべき大型の絶縁基板に,個
片化切断用の貫通孔を形成し,かつ,上記貫通孔の内壁
は,傾斜した斜面壁からなる貫通孔形成工程と,上記貫
通孔内も含めて,上記絶縁基板の全表面に,金属メッキ
膜を施すと共に感光性のエッチングレジスト膜を形成す
る被覆工程と,上記絶縁基板の表面に配線回路及び斜面
回路のパターンを形成するためのマスクフィルムを配置
し,該マスクフィルムに対して平行光を照射し,その
後,上記マスクフィルムを除去する露光工程と,上記大
型の絶縁基板にエッチングを施して,上記絶縁基板の上
面には配線回路を,上記貫通孔内の斜面壁には斜面回路
を形成すると共に,上記絶縁基板の下面に実装用パッド
を形成するパターン形成工程と,上記貫通孔に沿って上
記大型の絶縁基板を切断して,個片化またはフレーム化
されたリードレスチップキャリアを作製する切断工程と
からなることを特徴とするリードレスチップキャリアの
製造方法。
3. A through-hole forming step in which a through hole for cutting into individual pieces is formed on a large-sized insulating substrate to be singulated, and the inner wall of the through hole is a slanted sloped wall. A coating step of forming a metal plating film and a photosensitive etching resist film on the entire surface of the insulating substrate including the inside of the through hole, and forming a wiring circuit and a slope circuit pattern on the surface of the insulating substrate. A mask film for irradiating the mask film, irradiating the mask film with parallel light, and then removing the mask film, and etching the large-sized insulating substrate to form an upper surface of the insulating substrate. Forming a wiring circuit, a slope circuit on the slope wall in the through hole, and a pattern forming step of forming a mounting pad on the lower surface of the insulating substrate, and the large insulating substrate along the through hole. Off A method of manufacturing a leadless chip carrier, which comprises a cutting step of cutting into individual pieces or a framed leadless chip carrier.
【請求項4】 請求項3において,上記絶縁基板の下面
には,配線回路を形成することを特徴とするリードレス
チップキャリアの製造方法。
4. The method for manufacturing a leadless chip carrier according to claim 3, wherein a wiring circuit is formed on the lower surface of the insulating substrate.
【請求項5】 請求項3,又は4において,上記貫通孔
は,ザグリ加工により形成することを特徴とするリード
レスチップキャリアの製造方法。
5. The method for manufacturing a leadless chip carrier according to claim 3, wherein the through hole is formed by counterboring.
【請求項6】 請求項3,4,又は5において,上記エ
ッチングレジスト膜は,湿式方法により形成することを
特徴とするリードレスチップキャリアの製造方法。
6. The method for manufacturing a leadless chip carrier according to claim 3, 4, or 5, wherein the etching resist film is formed by a wet method.
JP6049813A 1994-02-22 1994-02-22 Leadless chip carrier and manufacture thereof Pending JPH07235621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6049813A JPH07235621A (en) 1994-02-22 1994-02-22 Leadless chip carrier and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6049813A JPH07235621A (en) 1994-02-22 1994-02-22 Leadless chip carrier and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH07235621A true JPH07235621A (en) 1995-09-05

Family

ID=12841573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6049813A Pending JPH07235621A (en) 1994-02-22 1994-02-22 Leadless chip carrier and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH07235621A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1063699A1 (en) * 1998-02-10 2000-12-27 Nissha Printing Co., Ltd. Base sheet for semiconductor module, method for manufacturing base sheet for semiconductor module, and semiconductor module
WO2006013731A1 (en) * 2004-08-06 2006-02-09 A. L. M. T. Corp. Collective substrate, semiconductor element mounting member, semiconductor device, imaging device, light emitting diode constituting member, and light emitting diode
JP2006229033A (en) * 2005-02-18 2006-08-31 Hitachi Aic Inc Method for manufacturing wiring-board for side-surface electrode
KR100651797B1 (en) * 2000-10-12 2006-11-30 삼성테크윈 주식회사 Method for manufacturing carrier of flip chip semiconductorr package
WO2008105149A1 (en) * 2007-02-26 2008-09-04 Nec Corporation Circuit module
JP2014162120A (en) * 2013-02-26 2014-09-08 Seiko Epson Corp Wiring structure, manufacturing method of the same, droplet discharge head, and droplet discharge device
JP2020194914A (en) * 2019-05-29 2020-12-03 京セラ株式会社 Wiring board, electronic apparatus, and electronic module

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1063699A1 (en) * 1998-02-10 2000-12-27 Nissha Printing Co., Ltd. Base sheet for semiconductor module, method for manufacturing base sheet for semiconductor module, and semiconductor module
EP1063699A4 (en) * 1998-02-10 2007-07-25 Nissha Printing Base sheet for semiconductor module, method for manufacturing base sheet for semiconductor module, and semiconductor module
KR100651797B1 (en) * 2000-10-12 2006-11-30 삼성테크윈 주식회사 Method for manufacturing carrier of flip chip semiconductorr package
WO2006013731A1 (en) * 2004-08-06 2006-02-09 A. L. M. T. Corp. Collective substrate, semiconductor element mounting member, semiconductor device, imaging device, light emitting diode constituting member, and light emitting diode
KR100765945B1 (en) * 2004-08-06 2007-10-10 가부시끼가이샤 아라이도 마테리아루 Collective substrate, semiconductor element mounting member, semiconductor device, imaging device, light emitting diode constituting member, and light emitting diode
US7649270B2 (en) 2004-08-06 2010-01-19 A. L. M. T. Corp. Collective substrate, semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode
US7737562B2 (en) 2004-08-06 2010-06-15 A. L. M. T. Corp. Semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode
JP2006229033A (en) * 2005-02-18 2006-08-31 Hitachi Aic Inc Method for manufacturing wiring-board for side-surface electrode
WO2008105149A1 (en) * 2007-02-26 2008-09-04 Nec Corporation Circuit module
JP2014162120A (en) * 2013-02-26 2014-09-08 Seiko Epson Corp Wiring structure, manufacturing method of the same, droplet discharge head, and droplet discharge device
US9579892B2 (en) 2013-02-26 2017-02-28 Seiko Epson Corporation Wiring structure, method of manufacturing wiring structure, liquid droplet ejecting head, and liquid droplet ejecting apparatus
JP2020194914A (en) * 2019-05-29 2020-12-03 京セラ株式会社 Wiring board, electronic apparatus, and electronic module

Similar Documents

Publication Publication Date Title
RU2146067C1 (en) Organic chip holder for integrated circuits with wire connections
US7506437B2 (en) Printed circuit board having chip package mounted thereon and method of fabricating same
US5402314A (en) Printed circuit board having through-hole stopped with photo-curable solder resist
US5953594A (en) Method of making a circuitized substrate for chip carrier structure
US6798665B2 (en) Module and method of manufacturing the module
KR100204163B1 (en) Manufacture of semiconductor device
JPH07235621A (en) Leadless chip carrier and manufacture thereof
US6110650A (en) Method of making a circuitized substrate
US6207354B1 (en) Method of making an organic chip carrier package
JP4000609B2 (en) Electronic component mounting substrate and manufacturing method thereof
JPH0155591B2 (en)
KR20000028840A (en) Process for manufacturing semiconductor device using film substrate
GB2324753A (en) Manufacturing printed circuit and printed wiring boards
JP3246954B2 (en) Method for manufacturing flexible circuit wiring board for mounting circuit components
JP3511656B2 (en) Manufacturing method of leadless chip carrier
JPH04150033A (en) Bump on electronic circuit board; formation method of bump on electronic circuit board and of circuit pattern
KR100516762B1 (en) Method for manufatureing c2bga printed circuit board using solder plating
JPH09186416A (en) Board for surface mounting type electronic component and manufacture thereof
JPH1117315A (en) Manufacture of flexible circuit board
JP3207266B2 (en) Manufacturing method of circuit wiring board with circuit component mounting terminals
TWI778816B (en) Package structure with interconnection between chips and package method thereof
US9433105B2 (en) Method of fabricating printed circuit boards
JP2685443B2 (en) Processing method of printed circuit board
JP2007180592A (en) Substrate for mounting electronic components, and method for manufacturing the same
JP2004048085A (en) Leadless chip carrier