JPH0722807A - High frequency circuit device - Google Patents
High frequency circuit deviceInfo
- Publication number
- JPH0722807A JPH0722807A JP15958393A JP15958393A JPH0722807A JP H0722807 A JPH0722807 A JP H0722807A JP 15958393 A JP15958393 A JP 15958393A JP 15958393 A JP15958393 A JP 15958393A JP H0722807 A JPH0722807 A JP H0722807A
- Authority
- JP
- Japan
- Prior art keywords
- frequency circuit
- magnetic body
- high frequency
- circuit device
- body portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Filters And Equalizers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高周波回路装置に関し、
特に高周波接地部となる先端開放スタブを有する高周波
回路装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency circuit device,
In particular, the present invention relates to a high frequency circuit device having an open stub that serves as a high frequency grounding portion.
【０００２】[0002]
【従来の技術】近年、衛星放送、自動車電話、携帯電
話、又はデータ伝送システム等の準マイクロ波、マイク
ロ波帯域を使用した高周波関連機器の需要が高まってお
り、これらの機器に用いられるキャパシタやインダクタ
等を組み込んだマイクロ波集積回路（以下ＭＩＣと略
す）の開発が進められている。特に、携帯電話機等に用
いられるＭＩＣは小型化が強く求められ、このため高周
波回路素子、磁性体シート、誘電体シート等を積層化し
て組み込んだ高周波回路装置の開発が活発に行われてい
る。この高周波回路装置は、例えば特開平4-267615(H03
H 7/075)公報に示されている。2. Description of the Related Art In recent years, there has been an increasing demand for high-frequency related equipment using quasi-microwave and microwave bands such as satellite broadcasting, car phones, mobile phones, data transmission systems, etc. Development of a microwave integrated circuit (hereinafter abbreviated as MIC) incorporating an inductor and the like is underway. In particular, MICs used in mobile phones and the like are strongly demanded to be miniaturized. Therefore, high-frequency circuit devices in which high-frequency circuit elements, magnetic sheets, dielectric sheets and the like are laminated and incorporated are being actively developed. This high-frequency circuit device is disclosed, for example, in Japanese Patent Laid-Open No. 4-267615 (H03).
H 7/075) publication.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記公
報に記載されているような高周波回路装置では、ワイヤ
ボンディング線や塗布形成された導電性材料等による配
線を用いて高周波回路装置の外部で高周波回路素子が高
周波接地されているので、この配線による寄生インダク
タンスや、高周波回路素子と接地部とのインピーダンス
不整合による寄生インダクタンスが生じるので、雑音特
性等の高周波回路装置の特性が低下するという問題があ
った。However, in the high frequency circuit device as described in the above publication, the high frequency circuit device is provided outside the high frequency circuit device by using the wire bonding wire or the wiring made of the conductive material formed by coating. Since the element is grounded at high frequency, parasitic inductance due to this wiring and parasitic inductance due to impedance mismatch between the high-frequency circuit element and the grounding part occur, and there is a problem that characteristics of the high-frequency circuit device such as noise characteristics deteriorate. It was
【０００４】本発明は斯る問題点に鑑みて成されたもの
であり、寄生インダクタンスがほとんど発生しない高周
波回路装置を提供することを課題とする。The present invention has been made in view of these problems, and an object thereof is to provide a high frequency circuit device in which parasitic inductance hardly occurs.
【０００５】[0005]
【課題を解決するための手段】本発明に係る高周波回路
装置は、第１の磁性体部と、該第１の磁性体部上に設け
られた先端開放スタブと、該先端開放スタブ上に設けら
れた第２の磁性体部と、該第２の磁性体部上に設けられ
た高周波回路素子とを備え、前記高周波回路素子が前記
第２の磁性体部を貫通するスルーホール部を介して先端
開放スタブに電気的に接続されると共に、該先端開放ス
タブが前記第１の磁性体部を貫通するスルーホール部を
介して電気的に接地されたことを特徴とする。A high-frequency circuit device according to the present invention includes a first magnetic body portion, a tip open stub provided on the first magnetic body portion, and a tip open stub provided on the tip open stub. And a high-frequency circuit element provided on the second magnetic body section. The high-frequency circuit element is provided with a through-hole section penetrating the second magnetic body section. The tip open stub is electrically connected to the tip open stub, and the tip open stub is electrically grounded through a through hole portion penetrating the first magnetic body portion.
【０００６】特に、前記第１の磁性体部を貫通するスル
ーホール部は前記第２の磁性体部を貫通するスルーホー
ル部の垂下に設けられたことを特徴とする。In particular, the through hole portion penetrating the first magnetic body portion is provided below the through hole portion penetrating the second magnetic body portion.
【０００７】[0007]
【作用】本発明の高周波回路装置の構成によれば、高周
波回路素子は高周波回路装置内に設けられた先端開放ス
タブにて高周波接地されるので、高周波回路素子と接地
とのインピーダンス不整合が低減されると共に、高周波
回路素子と先端開放スタブとの電気的な接続距離を短く
できる。この結果、高周波回路装置の寄生インダクタン
スの発生を抑えることができる。また、高周波回路素子
と先端開放スタブの間には、特性分離部として電磁波吸
収体である磁性体シートを積層してなる十分な厚みを持
つ第２の磁性体部を設けているので、これらの共振等の
電磁波的な結合を防ぐことができる。According to the structure of the high-frequency circuit device of the present invention, the high-frequency circuit element is grounded at a high frequency by the open stub provided in the high-frequency circuit device, so that the impedance mismatch between the high-frequency circuit element and the ground is reduced. In addition, the electrical connection distance between the high-frequency circuit element and the open-end stub can be shortened. As a result, generation of parasitic inductance of the high frequency circuit device can be suppressed. Further, between the high-frequency circuit element and the open-end stub, a second magnetic material portion having a sufficient thickness formed by laminating magnetic material sheets as electromagnetic wave absorbers is provided as a characteristic separating portion. Electromagnetic coupling such as resonance can be prevented.
【０００８】特に、第１の磁性体部を貫通するスルーホ
ール部が前記第２の磁性体部を貫通するスルーホール部
の垂下に設けられている場合には、前記高周波回路素子
と前記先端開放スタブとの電気的に接続する距離がより
短くなり、寄生インダクタンスの発生をより少なくでき
る。Particularly, in the case where the through hole portion penetrating the first magnetic body portion is provided below the through hole portion penetrating the second magnetic body portion, the high frequency circuit element and the tip open end. The distance to be electrically connected to the stub becomes shorter, and the occurrence of parasitic inductance can be further reduced.
【０００９】[0009]
【実施例】本発明の一実施例を図面を参照しつつ詳細に
説明する。図１は本実施例に係る高周波回路装置の模式
的分解斜視図であり、図２は図１に示す高周波回路装置
を構成するＴ型ローパスフィルタの等価回路であり、図
３は図１に示す高周波回路装置の模式的断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail with reference to the drawings. 1 is a schematic exploded perspective view of a high-frequency circuit device according to this embodiment, FIG. 2 is an equivalent circuit of a T-type low-pass filter that constitutes the high-frequency circuit device shown in FIG. 1, and FIG. 3 is shown in FIG. It is a typical sectional view of a high frequency circuit device.
【００１０】図１に於て、１はアルミナ（Ａｌ2Ｏ3）等
からなるアルミナセラミックス製誘電体基板（厚み２５
０μｍ）である。In FIG. 1, reference numeral 1 denotes an alumina ceramics dielectric substrate (thickness: 25) made of alumina (Al 2 O 3 ) or the like.
0 μm).
【００１１】この誘電体基板１の上には、Ｎｉ−Ｚｎ、
Ｍｎ−Ｚｎ、又はＣｒ−Ｚｎ系等のフェライト粉末成形
体からなる矩形状の磁性体シート（幅４０００μｍ、長
さ３０００μｍ、厚み１００μｍ）により構成される第
１の磁性体部２が設けられている。この第１の磁性体部
２上の中央部には、同一寸法形状のＡｕ等からなる扇形
電極（扇形の長さ１８７５μｍ、扇形角度１２０度、厚
み５μｍ）が二つ対向して構成されるボウタイ（bow ti
e：蝶ネクタイ）形の先端開放スタブ３が形成されてい
る。これら磁性体シート２及び先端開放スタブ３によっ
て高周波接地部４が構成される。On the dielectric substrate 1, Ni--Zn,
A first magnetic body portion 2 formed of a rectangular magnetic body sheet (width 4000 μm, length 3000 μm, thickness 100 μm) made of ferrite powder compact such as Mn—Zn or Cr—Zn system is provided. . At the central portion of the first magnetic body portion 2, two bow-shaped electrodes (fan-shaped length 1875 μm, fan-shaped angle 120 °, thickness 5 μm) made of Au or the like having the same size are opposed to each other. (Bow ti
e: a bow tie) -shaped open-end stub 3 is formed. The magnetic sheet 2 and the open-end stub 3 constitute a high-frequency grounding section 4.
【００１２】この高周波接地部４上には、Ｎｉ−Ｚｎ、
Ｍｎ−Ｚｎ、又はＣｒ−Ｚｎ系等のフェライト粉末成形
体から夫々なる矩形状の磁性体シート５、６、７、８
（夫々幅４０００μｍ、長さ３０００μｍ、厚み２００
μｍ）が積層されてなる特性分離部としての第２の磁性
体部９が設けられている。Ni-Zn,
Rectangular magnetic sheets 5, 6, 7, 8 made of ferrite powder compacts such as Mn-Zn or Cr-Zn system
(Width 4000 μm, length 3000 μm, thickness 200 respectively
The second magnetic body portion 9 is provided as a characteristic separating portion formed by stacking μm).
【００１３】この第２の磁性体部９上には、図２に示す
コンデンサＣ、インダクタＬ1、Ｌ2からなる５ＧＨZ用
の所謂Ｔ型ローパスフィルタの高周波回路素子Ｓが設け
られている。[0013] On the second magnetic body 9, the capacitor C shown in FIG. 2, an inductor L 1, a so-called T-type low-pass filter a high-frequency circuit element S for 5GH Z consisting of L 2 is provided.
【００１４】即ち、第２の磁性体部９上の中央部には矩
形状のＡｕ等からなる下部電極１０（幅２０００μｍ、
長さ１８００μｍ、厚み５μｍ）が形成されている。こ
の第２の磁性体部９上及び下部電極１０上にはアルミナ
（Ａｌ2Ｏ3）等のアルミナセラミック製誘電体シート１
１（幅４０００μｍ、長さ３０００μｍ、厚み１５０μ
ｍ）が形成されている。この誘電体シート１１上の中央
部には、下部電極１０と対向してこの下部電極１０と同
一寸法のＡｕ等からなる上部電極１２が形成されてい
る。これら下部電極１０、上部電極１２及びこれらに挟
まれた誘電体シート１１とによってコンデンサＣ（６０
０ｆＦ）が構成される。That is, a rectangular lower electrode 10 made of Au or the like (having a width of 2000 μm
The length is 1800 μm and the thickness is 5 μm). A dielectric sheet 1 made of alumina ceramics such as alumina (Al 2 O 3 ) is formed on the second magnetic body portion 9 and the lower electrode 10.
1 (width 4000 μm, length 3000 μm, thickness 150 μ
m) is formed. An upper electrode 12 made of Au or the like having the same size as the lower electrode 10 is formed in the central portion of the dielectric sheet 11 so as to face the lower electrode 10. The capacitor C (60) is formed by the lower electrode 10, the upper electrode 12, and the dielectric sheet 11 sandwiched therebetween.
0fF) is configured.
【００１５】このコンデンサＣ上には、Ｎｉ−Ｚｎ、Ｍ
ｎ−Ｚｎ、又はＣｒ−Ｚｎ系等のフェライト粉末成形体
からなる矩形状の磁性体シート１３（幅４０００μｍ、
長さ３０００μｍ、厚み２００μｍ）が設けられ、この
磁性体シート１３の両端部には、夫々入力電極１４、出
力電極１５が形成されている。これら入力電極１４、出
力電極１５は、磁性体シート１３上に形成されたＡｕ等
からなる渦巻き状の導体線路（厚み５μｍ、幅２０μ
ｍ、ターン数２、総線路長３７００μｍ）により夫々構
成されるインダクタＬ1 （２．９ｎＨ）、Ｌ2（２．９
ｎＨ）と夫々電気的に接続されている。このインダクタ
Ｌ1、Ｌ2の夫々の中心側一端は、夫々磁性体シート１３
を貫通するスルーホール部１６、１７に充填されたＰｂ
−Ｓｎ合金、Ａｕ、Ａｇ等からなる導電性材料１６ａ、
１７ａを介して上部電極１２と電気的に接続されてい
る。On this capacitor C, Ni--Zn, M
Rectangular magnetic sheet 13 (width 4000 μm, made of ferrite powder compact such as n-Zn or Cr-Zn system)
A length of 3000 μm and a thickness of 200 μm) is provided, and an input electrode 14 and an output electrode 15 are formed on both ends of the magnetic sheet 13. The input electrode 14 and the output electrode 15 are spiral conductor lines (thickness 5 μm, width 20 μm) made of Au or the like formed on the magnetic sheet 13.
m, the number of turns 2, and the total line length 3700 μm), inductors L 1 (2.9 nH) and L 2 (2.9) respectively.
nH) and are electrically connected respectively. One end of each of the inductors L 1 and L 2 on the center side is connected to the magnetic material sheet 13 respectively.
Filled in the through holes 16 and 17 penetrating the
-A conductive material 16a made of Sn alloy, Au, Ag, or the like,
It is electrically connected to the upper electrode 12 via 17a.
【００１６】この磁性体シート１３上及びインダクタＬ
1、Ｌ2上にはキャップ部としてのＮｉ−Ｚｎ、Ｍｎ−Ｚ
ｎ、又はＣｒ−Ｚｎ系等のフェライト粉末成形体からな
る矩形状の磁性体シート１８（幅４０００μｍ、長さ３
０００μｍ、厚み２００μｍ）が形成されている。On the magnetic sheet 13 and the inductor L
Ni, Zn and Mn-Z as a cap portion on 1 and L 2.
rectangular magnetic sheet 18 (width 4000 μm, length 3) made of ferrite powder compact such as n or Cr—Zn system
000 μm, thickness 200 μm) is formed.
【００１７】尚、上記誘電体基板１の下面にはＡｕ等か
らなる接地電極１９（厚み１５μｍ）が形成され、又、
この基板１の上面にはＡｕ等からなる入力端子２０、出
力端子２１が形成されている。A ground electrode 19 (thickness: 15 μm) made of Au or the like is formed on the lower surface of the dielectric substrate 1, and
An input terminal 20 and an output terminal 21 made of Au or the like are formed on the upper surface of the substrate 1.
【００１８】図３は斯る高周波回路装置の模式的断面図
である。図３に示すように、接地電極１９、先端開放ス
タブ３、及び前記高周波回路素子Ｓの下部電極１０は、
誘電体基板１、第１の磁性体部２、先端開放スタブ３の
二つの扇形電極の結合部分、及び第２の磁性体部９を夫
々貫通するスルーホール部２２、２３、２４、２５が継
合されてなる貫通孔に充填されたＰｂ−Ｓｎ合金、Ａ
ｕ、Ａｇ等からなる導電性材料２２ａ、２３ａ、２４
ａ、２５ａを介して電気的に接続されている。FIG. 3 is a schematic sectional view of such a high frequency circuit device. As shown in FIG. 3, the ground electrode 19, the tip open stub 3, and the lower electrode 10 of the high frequency circuit element S are
Through holes 22, 23, 24, and 25 penetrating the dielectric substrate 1, the first magnetic body portion 2, the connecting portion of the two fan-shaped electrodes of the open-end stub 3, and the second magnetic body portion 9 are connected. Pb-Sn alloy, A filled in the through hole
Conductive materials 22a, 23a, 24 made of u, Ag, etc.
It is electrically connected via a and 25a.
【００１９】また、入力電極１４と入力端子２０との
間、及び出力電極１５と出力端子２１との間は、高周波
回路装置の両側面に形成されたＡｕ等からなる導体線路
２６、２７により夫々電気的に接続されている。Between the input electrode 14 and the input terminal 20, and between the output electrode 15 and the output terminal 21, conductor lines 26 and 27 made of Au or the like are formed on both side surfaces of the high-frequency circuit device, respectively. It is electrically connected.
【００２０】斯る高周波回路装置は、予め前記スルーホ
ール部に前記導電性材料を充填した後、誘電体基板１、
高周波接地部４、第２の磁性体部９、及び前記高周波素
子をスルーホール部２２、２３、２４、２５が一軸とな
るようにこの順序に積層し、圧着することにより作成さ
れる。In such a high-frequency circuit device, after the through hole is filled with the conductive material in advance, the dielectric substrate 1,
The high-frequency grounding portion 4, the second magnetic body portion 9, and the high-frequency element are laminated in this order so that the through-hole portions 22, 23, 24, 25 are uniaxial, and are pressure-bonded.
【００２１】斯る高周波回路装置は、高周波回路素子Ｓ
が高周波回路装置内に設けられた先端開放スタブ３にて
高周波接地され、高周波回路素子Ｓと先端開放スタブ３
と接地電極１９とが前記貫通孔に充填された導電性材料
を介して電気的に接続されるので、この高周波回路素子
Ｓと接地電極１９とのインピーダンス不整合が低減され
ると共に、高周波回路素子Ｓと先端開放スタブ３とを電
気的に接続する距離が短くなる。この結果、高周波回路
装置の寄生インダクタンスの発生を抑えることができ
る。The high frequency circuit device has a high frequency circuit element S.
Is grounded at a high frequency by the open-end stub 3 provided in the high-frequency circuit device, and the high-frequency circuit element S and the open-end stub 3 are connected.
Since the ground electrode 19 and the ground electrode 19 are electrically connected via the conductive material with which the through hole is filled, the impedance mismatch between the high frequency circuit element S and the ground electrode 19 is reduced and the high frequency circuit element is provided. The distance for electrically connecting S and the open-end stub 3 is shortened. As a result, generation of parasitic inductance of the high frequency circuit device can be suppressed.
【００２２】また、高周波回路素子Ｓと先端開放スタブ
３の間には、電磁波吸収体であるＮｉ−Ｚｎ、Ｍｎ−Ｚ
ｎ、又はＣｒ−Ｚｎ系等のフェライト粉末成形体５、
６、７、８を積層して十分な厚みを有する特性分離部と
しての第２の磁性体部９を設けているので、これらの共
振等の電磁波的な結合を防ぐことができる。Between the high-frequency circuit element S and the open-end stub 3, Ni-Zn and Mn-Z which are electromagnetic wave absorbers are provided.
n, or a ferrite powder compact 5 such as Cr-Zn system,
Since the second magnetic body portion 9 as a characteristic separating portion having a sufficient thickness is provided by laminating 6, 7, and 8, electromagnetic coupling such as resonance thereof can be prevented.
【００２３】尚、上述した実施例では高周波接地用のス
タブ３としてボウタイ形の先端開放スタブを用いたが、
先端が開放されたスタブであれば良く、十字形等の種々
の形状のスタブを適宜用いることができる。In the above-mentioned embodiment, the bow-tie type open tip stub is used as the stub 3 for high frequency grounding.
Any stub having an open tip may be used, and stubs having various shapes such as a cross shape can be appropriately used.
【００２４】本発明は、上述では高周波回路素子Ｓとし
てローパスフィルタについて述べたが、ハイパスフィル
タ、ＤＣカット付きローパスフィルタ、ＤＣカット付き
ハイパスフィルタ等の高周波回路素子でも良い。In the present invention, the low-pass filter is described as the high-frequency circuit element S in the above description, but a high-frequency circuit element such as a high-pass filter, a low-pass filter with DC cut, or a high-pass filter with DC cut may be used.
【００２５】[0025]
【発明の効果】本発明の高周波回路装置の構成によれ
ば、高周波回路素子は該装置内に設けられた先端開放ス
タブにて高周波接地されるので、高周波回路素子と接地
とのインピーダンス不整合が低減されると共に、高周波
回路素子と先端開放スタブとの電気的な接続距離が短く
なり、高周波回路装置の寄生インダクタンスの発生を抑
えることができる。According to the structure of the high-frequency circuit device of the present invention, the high-frequency circuit element is grounded at a high frequency by the open-end stub provided in the device, so that the impedance mismatch between the high-frequency circuit element and the ground is prevented. At the same time, the electrical connection distance between the high frequency circuit element and the open-end stub is shortened, and the parasitic inductance of the high frequency circuit device can be suppressed.
【００２６】また、高周波回路素子と先端開放スタブの
間には、電磁波吸収体であるフェライト粉末成形体を積
層して十分な厚みを有する特性分離部としての第２の磁
性体部を設けているので、これらの共振等の電磁波的な
結合を防ぐことができる。Further, between the high-frequency circuit element and the open-end stub, a ferrite powder compact which is an electromagnetic wave absorber is laminated to provide a second magnetic material portion having a sufficient thickness as a characteristic separating portion. Therefore, electromagnetic coupling such as resonance can be prevented.
【００２７】この結果、斯る高周波回路装置は寄生イン
ダクタンスがほとんど発生することがなくなり、雑音特
性等の高周波特性が極めて良好となる。As a result, in such a high frequency circuit device, almost no parasitic inductance is generated, and the high frequency characteristics such as noise characteristics become extremely good.
【００２８】特に、第１の磁性体部を貫通するスルーホ
ール部が前記第２の磁性体部を貫通するスルーホール部
の垂下に設けられている場合には、前記高周波回路素子
と前記先端開放スタブとの電気的に接続する距離がより
短くなるので、寄生インダクタンスの発生をより少なく
でき、雑音特性等の高周波特性がより良好となる。In particular, when the through hole portion penetrating the first magnetic body portion is provided below the through hole portion penetrating the second magnetic body portion, the high frequency circuit element and the tip open end. Since the distance to be electrically connected to the stub becomes shorter, the occurrence of parasitic inductance can be further reduced, and the high frequency characteristics such as noise characteristics become better.
【図１】本発明の一実施例に係る高周波回路装置を示す
模式的分解斜視図である。FIG. 1 is a schematic exploded perspective view showing a high frequency circuit device according to an embodiment of the present invention.
【図２】本発明の一実施例に係る高周波回路装置を構成
するＴ型ローパスフィルタの等価回路を示す図である。FIG. 2 is a diagram showing an equivalent circuit of a T-type low-pass filter that constitutes a high-frequency circuit device according to an embodiment of the present invention.
【図３】本発明の一実施例に係る高周波回路装置の模式
的断面図である。FIG. 3 is a schematic cross-sectional view of a high frequency circuit device according to an embodiment of the present invention.
２ 第１の磁性体部 ３ 先端開放スタブ ９ 第２の磁性体部 １９ 接地電極 ２２、２３、２４、２５ スルーホール部 Ｃ コンデンサ Ｌ1 、Ｌ2 インダクタ Ｓ 高周波回路素子2 the first magnetic body section 3 open stub 9 second magnetic portion 19 ground electrode 22, 23, 24, 25 through hole portion C capacitor L 1, L 2 inductor S high-frequency circuit device
Claims (2)
に設けられた先端開放スタブと、該先端開放スタブ上に
設けられた第２の磁性体部と、該第２の磁性体部上に設
けられた高周波回路素子と、を備え、 前記高周波回路素子が前記第２の磁性体部を貫通するス
ルーホール部を介して先端開放スタブに電気的に接続さ
れると共に、該先端開放スタブが前記第１の磁性体部を
貫通するスルーホール部を介して電気的に接地されたこ
とを特徴とする高周波回路装置。1. A first magnetic body portion, a tip open stub provided on the first magnetic body portion, a second magnetic body portion provided on the tip open stub, and the second magnetic body portion. And a high-frequency circuit element provided on the magnetic body portion, wherein the high-frequency circuit element is electrically connected to the open-end stub via a through hole portion penetrating the second magnetic body portion, A high-frequency circuit device, wherein the open-end stub is electrically grounded through a through hole portion that penetrates the first magnetic body portion.
ール部は前記第２の磁性体部を貫通するスルーホール部
の垂下に設けられたことを特徴とする請求項１記載の高
周波回路装置。2. The high frequency circuit according to claim 1, wherein the through hole portion penetrating the first magnetic body portion is provided below the through hole portion penetrating the second magnetic body portion. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15958393A JPH0722807A (en) | 1993-06-29 | 1993-06-29 | High frequency circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15958393A JPH0722807A (en) | 1993-06-29 | 1993-06-29 | High frequency circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0722807A true JPH0722807A (en) | 1995-01-24 |
Family
ID=15696889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15958393A Pending JPH0722807A (en) | 1993-06-29 | 1993-06-29 | High frequency circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722807A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11112183A (en) * | 1992-04-22 | 1999-04-23 | Ten Kk | Electronic wave absorption structure and printed circuit board of various articles |
| JP2014099553A (en) * | 2012-11-15 | 2014-05-29 | Honda Motor Co Ltd | Control device grounded via casing |
-
1993
- 1993-06-29 JP JP15958393A patent/JPH0722807A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11112183A (en) * | 1992-04-22 | 1999-04-23 | Ten Kk | Electronic wave absorption structure and printed circuit board of various articles |
| JP2014099553A (en) * | 2012-11-15 | 2014-05-29 | Honda Motor Co Ltd | Control device grounded via casing |
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