JPH07226460A - Resin sealed semiconductor device and its manufacturing method - Google Patents

Resin sealed semiconductor device and its manufacturing method

Info

Publication number
JPH07226460A
JPH07226460A JP6015659A JP1565994A JPH07226460A JP H07226460 A JPH07226460 A JP H07226460A JP 6015659 A JP6015659 A JP 6015659A JP 1565994 A JP1565994 A JP 1565994A JP H07226460 A JPH07226460 A JP H07226460A
Authority
JP
Japan
Prior art keywords
resin
island
semiconductor element
resin plate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6015659A
Other languages
Japanese (ja)
Inventor
Junya Nagano
順也 永野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6015659A priority Critical patent/JPH07226460A/en
Publication of JPH07226460A publication Critical patent/JPH07226460A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To manufacture the resin sealed semiconductor device and its manufacturing method causing no cracking at all even if the thermal stress such as that in the reflow soldering step is imposed on the semiconductor device. CONSTITUTION:In the manufacturing method, an elastic resin after setting step is cast-set in planar shape using a frame mold to form a resin plate 6 on a main surface whereon a semiconductor element 4 on an island 2 is not mounted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は樹脂封止型半導体装置
およびその製造方法に関し、特に封止樹脂のクラックに
対する耐性を向上させた樹脂封止型半導体装置およびそ
の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device and a method of manufacturing the same, and more particularly to a resin-encapsulated semiconductor device having improved resistance to cracking of an encapsulating resin and a method of manufacturing the same.

【0002】[0002]

【従来の技術】近年電子機器の小型化、高性能化に伴い
実装回路全体としての小型薄型化が進んでいる。これに
伴い半導体パッケージも従来のリード挿入型から表面実
装型が広く使用されるようになってきている。表面実装
型部品のプリント配線板への搭載方法は、一般的にはプ
リント配線板の部品搭載ランドにクリーム半田を印刷等
で供給しておき、部品のリードを位置合わせして搭載
し、プリント配線板の上下より遠赤外線、熱風等で加熱
し、半田を溶融して取り付けるいわゆるリフロー半田付
けが採用されている。
2. Description of the Related Art In recent years, with the miniaturization and high performance of electronic equipment, the miniaturization and thinning of the entire mounting circuit has been advanced. Along with this, the surface mount type semiconductor package has been widely used instead of the conventional lead insertion type. Generally, the method of mounting the surface mount type component on the printed wiring board is to supply cream solder to the component mounting land of the printed wiring board by printing etc., align the lead of the component and mount it. So-called reflow soldering is employed in which solder is melted and attached by heating with far infrared rays or hot air from above and below the plate.

【0003】リフロー半田付けは、従来リード挿入型部
品の半田付けに採用されていたフローソルダリングに比
較して、搭載部品が直接加熱されるため、部品自体の温
度が上昇し、そのため部品に種々の不具合が生じてい
る。例えば樹脂封止型半導体装置の場合は、封止樹脂が
吸湿していると吸湿された水分が気化し、封止樹脂にク
ラックが発生する事がある。この間の事情を図9〜図1
1を参照して説明する。
In reflow soldering, compared with flow soldering which has been conventionally used for soldering lead insertion type parts, the mounted parts are heated directly, so that the temperature of the parts themselves rises, and therefore various kinds of parts are used. There is a problem with. For example, in the case of a resin-encapsulated semiconductor device, if the encapsulating resin absorbs moisture, the absorbed moisture may vaporize, and cracks may occur in the encapsulating resin. The situation during this period is shown in FIGS.
This will be described with reference to FIG.

【0004】図9は一般的な樹脂封止型半導体装置の構
造を模式的に表した一部切り欠き斜視図で、図10は図
9のA−A線での断面図である。21はリードであり、
アイランド22の上には導電性のマウント剤23を介し
て半導体素子24が搭載されている。リード21と半導
体素子24の電極部(図示せず)との間はボンディング
ワイヤ25で接続されており、全体が封止樹脂26でモ
ールド(封止)されている。
FIG. 9 is a partially cutaway perspective view schematically showing the structure of a general resin-encapsulated semiconductor device, and FIG. 10 is a sectional view taken along line AA of FIG. 21 is a lead,
A semiconductor element 24 is mounted on the island 22 via a conductive mount material 23. The lead 21 and an electrode portion (not shown) of the semiconductor element 24 are connected by a bonding wire 25, and the whole is molded (sealed) with a sealing resin 26.

【0005】図11は封止樹脂にクラックが入るメカニ
ズムを説明した断面図である。封止樹脂26内に外気よ
り侵入した水蒸気は、封止樹脂26とアイランド22の
界面に存在する微少な隙間で凝縮され液化する。この液
化した水分がリフロー時の高温下で急激に膨張する。こ
のため封止樹脂26とアイランド22との界面に大きな
水蒸気圧が加わり界面が剥離し隙間27を発生させる。
封止樹脂26の吸湿量が多ければ界面剥離から樹脂のク
ラック28へと至る。
FIG. 11 is a cross-sectional view explaining the mechanism of cracking in the sealing resin. The water vapor that has entered the sealing resin 26 from the outside air is condensed and liquefied in the minute gap existing at the interface between the sealing resin 26 and the island 22. The liquefied water expands rapidly under the high temperature during reflow. Therefore, a large water vapor pressure is applied to the interface between the sealing resin 26 and the island 22, and the interface is peeled off to form the gap 27.
If the amount of moisture absorption of the sealing resin 26 is large, the interface peeling leads to the crack 28 of the resin.

【0006】そこで図12に示す様に封止樹脂26のア
イランド22下部に開口を設けてゴム状樹脂29を充填
するという考案もなされている。ゴム状樹脂29でアイ
ランド22との密着性を上げ水分の滞留を防止する。例
えゴム状樹脂29とアイランド22の間に隙間が発生し
水分が滞留し、その水分が半田リフロー等の加熱時に気
化して膨張しても、ゴム状樹脂は柔軟性が大きく圧力を
吸収するのでクラックが入ることが無くなるというもの
である。
Therefore, as shown in FIG. 12, it has been proposed to form an opening in the lower portion of the island 22 of the sealing resin 26 to fill the rubber-like resin 29. The rubber-like resin 29 improves the adhesion to the island 22 and prevents the retention of water. For example, even if a gap is generated between the rubber-like resin 29 and the island 22 and moisture stays, and the moisture vaporizes and expands during heating such as solder reflow, the rubber-like resin has large flexibility and absorbs pressure. It means that cracks will not occur.

【0007】しかしながらゴム状樹脂29と封止樹脂2
6との間は接着性が必ずしも充分でなく、水分の気化に
よりゴム状樹脂29に圧力がかかった場合に、ゴム状樹
脂29と封止樹脂26との接着力が弱まり、通気路が形
成されたり甚だしい場合はゴム状樹脂29の脱落の可能
性があった。
However, the rubber-like resin 29 and the sealing resin 2
6 does not necessarily have sufficient adhesiveness with 6, and when pressure is applied to the rubber-like resin 29 due to vaporization of water, the adhesive force between the rubber-like resin 29 and the sealing resin 26 is weakened to form a ventilation path. In the extreme case, the rubber-like resin 29 may drop off.

【0008】[0008]

【発明が解決しようとする課題】上記のように樹脂封止
型半導体装置にはリフロー半田付けの際、封止樹脂にク
ラックが生ずるという不具合があった。この対策として
封止樹脂のアイランド下に開口部を設け、ゴム状樹脂を
充填するという考案もなされたが、封止樹脂とゴム状樹
脂との接着性が必ずしも充分でなく、両者の界面に通気
路が形成されたりゴム状樹脂が脱落する可能性があっ
た。
As described above, the resin-encapsulated semiconductor device has a problem that cracks are generated in the encapsulating resin during reflow soldering. As a countermeasure against this, an idea was made to provide an opening below the island of the sealing resin and to fill it with a rubber-like resin, but the adhesiveness between the sealing resin and the rubber-like resin is not always sufficient, and the interface between the two does not flow. There was a possibility that channels would be formed and the rubber-like resin would fall off.

【0009】本発明はこのような事情に鑑みてなされた
もので、リフロー半田付け時のような熱ストレスが加わ
った場合にも封止樹脂にクラックが生じない耐湿性の良
好な樹脂封止型半導体装置を提供しようとするものであ
る。
The present invention has been made in view of the above circumstances, and is a resin-sealed mold having good moisture resistance so that cracks do not occur in the sealing resin even when thermal stress is applied during reflow soldering. It is intended to provide a semiconductor device.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に本発明では、半導体素子と、この半導体素子を搭載す
るアイランドと、前記半導体素子の電極部と電気的に接
続される複数のリードと、前記アイランドの前記半導体
素子を搭載しない主面下に付着形成された弾性を有する
樹脂板と、前記半導体素子と前記アイランドと前記リー
ドとを封止すると共に、前記樹脂板の側面および周縁部
を接着被覆する封止樹脂とを具備することを特徴として
いる。
In order to achieve the above object, according to the present invention, a semiconductor element, an island on which the semiconductor element is mounted, and a plurality of leads electrically connected to an electrode portion of the semiconductor element are provided. , An elastic resin plate adhered and formed below the main surface of the island on which the semiconductor element is not mounted, and the semiconductor element, the island, and the lead are sealed, and a side surface and a peripheral edge portion of the resin plate are formed. It is characterized by comprising a sealing resin for adhesive coating.

【0011】加えて第2の発明として、半導体素子と、
この半導体素子を搭載するアイランドと、前記半導体素
子の電極部と電気的に接続される複数のリードと、前記
アイランドの前記半導体素子を搭載しない主面下に付着
形成され、その側面に凹凸を有する樹脂板と、前記半導
体素子と前記アイランドと前記リードとを封止すると共
に、前記樹脂板の側面を接着する封止樹脂とを具備する
ことを特徴としている。 さらに本発明の製造方法は、
半導体素子をリードフレームのアイランドにマウントす
る工程と、前記半導体素子の電極と前記リードフレーム
のリードとを電気的に接続する工程と、前記アイランド
の半導体素子が搭載されない主面に、硬化後弾性を有す
る樹脂を、枠型を用いて板状に注型し硬化させ樹脂板を
形成する工程と、前記半導体素子と前記アイランドと前
記リードと、前記樹脂板の少なくとも中央部を除いて封
止樹脂で封止する工程とを具備することを特徴としてい
る。
In addition, as a second invention, a semiconductor element,
The island on which the semiconductor element is mounted, a plurality of leads electrically connected to the electrode portion of the semiconductor element, and the island that is formed below the main surface of the island on which the semiconductor element is not mounted and has unevenness on its side surface It is characterized by comprising a resin plate, a sealing resin that seals the semiconductor element, the island, and the lead, and that adheres a side surface of the resin plate. Furthermore, the manufacturing method of the present invention,
Mounting the semiconductor element on the island of the lead frame, electrically connecting the electrodes of the semiconductor element and the leads of the lead frame, and applying elastic after curing to the main surface of the island on which the semiconductor element is not mounted. A step of casting a resin having a plate shape using a frame mold and curing the resin to form a resin plate, a semiconductor resin, the island, the lead, and a sealing resin except at least a central portion of the resin plate. And a step of sealing.

【0012】[0012]

【作用】上記のように第1の発明では、アイランドの裏
面下に弾性を有する樹脂板を予め設けておき、樹脂封止
の際前記樹脂板の側面および周縁部を接着被覆するよう
にしたので、樹脂板と封止樹脂の接着距離が長くなり通
気路の発生を防止するとともに、前記樹脂板の周縁部を
封止樹脂で被覆することにより、樹脂板の脱落を防止し
ている。
As described above, in the first aspect of the invention, the elastic resin plate is previously provided under the back surface of the island, and the side surface and the peripheral portion of the resin plate are adhesively covered when the resin is sealed. The adhesion distance between the resin plate and the sealing resin is increased to prevent the generation of air passages, and the peripheral edge portion of the resin plate is covered with the sealing resin to prevent the resin plate from falling off.

【0013】また第2の発明では、アイランドの裏面下
に設けた弾性を有する樹脂板の側面に凹凸を設けたの
で、樹脂板と封止樹脂の接着距離が長くなり通気路の発
生を防止するとともに、前記樹脂板の凹凸が樹脂板の脱
落を防止する。
In the second aspect of the present invention, since the side surface of the elastic resin plate provided under the back surface of the island is provided with the unevenness, the adhesion distance between the resin plate and the sealing resin becomes long and the generation of the air passage is prevented. At the same time, the unevenness of the resin plate prevents the resin plate from falling off.

【0014】さらに本発明の製造方法ではアイランドの
裏面に枠型を設け、硬化後弾性を有する樹脂を注型し硬
化させて樹脂板を形成したので、前記アイランドと前記
樹脂板が直接接着し接着力を充分なものにすることがで
きる。
Further, in the manufacturing method of the present invention, a frame mold is provided on the back surface of the island, and after curing, a resin having elasticity is cast and cured to form a resin plate. Therefore, the island and the resin plate are directly bonded and bonded. You can get enough power.

【0015】[0015]

【実施例】次に本発明の実施例を図を参照して説明す
る。図1は本発明の第1の実施例に係わる樹脂封止型半
導体装置を模式的に表した断面図である。図1において
1はリード、2はアイランドで、Fe-Ni 合金やCuで製作
されたリードフレーム内に一体に形成されていたもので
ある。前記アイランド2の上にはAgペースト、半田等の
マウント剤3を介して半導体素子4が搭載されている。
この半導体チップ4と前記リード1とはボンディングワ
イヤ5で電気的に接続されている。前記アイランド2の
下面には、これと接着性がよく弾性を有するゴム状樹脂
(例えばシリコーンゴム、ウレタン樹脂、ポリイミド樹
脂等)による樹脂板6が形成されている。さらにこれら
の構成部品をエポキシ樹脂等の封止樹脂7で封止してい
る。この時封止樹脂7は前記樹脂板6の中央部は覆わず
開口を有する如く成型されている。従って前記樹脂板6
はその側面および周縁部で封止樹脂と接着し、スリップ
ないしは脱落が防止されている。前記樹脂板6の表面は
前記封止樹脂7の表面より1段下がっているので、例え
樹脂板6の中央部が水分の気化で膨張することがあって
も封止樹脂7の表面より突出することがない構成にもな
っている。プリント配線板等に実装した際、プリント配
線板との隙間の確保が問題になる用途には有効である。
なおシリコーンゴムを用いた場合は水蒸気透過性が大き
いので膨れ自体を未然に防止する効果もある。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a sectional view schematically showing a resin-sealed semiconductor device according to the first embodiment of the present invention. In FIG. 1, 1 is a lead and 2 is an island, which are integrally formed in a lead frame made of Fe-Ni alloy or Cu. A semiconductor element 4 is mounted on the island 2 via a mount material 3 such as Ag paste or solder.
The semiconductor chip 4 and the lead 1 are electrically connected by a bonding wire 5. On the lower surface of the island 2, a resin plate 6 made of a rubber-like resin (for example, silicone rubber, urethane resin, polyimide resin, or the like) having good adhesiveness and elasticity is formed. Further, these components are sealed with a sealing resin 7 such as an epoxy resin. At this time, the sealing resin 7 is molded so as to have an opening without covering the central portion of the resin plate 6. Therefore, the resin plate 6
Is bonded to the sealing resin on its side surface and peripheral portion, and slipping or falling off is prevented. Since the surface of the resin plate 6 is one step lower than the surface of the sealing resin 7, even if the central portion of the resin plate 6 expands due to vaporization of water, it protrudes from the surface of the sealing resin 7. It also has a unique structure. When mounted on a printed wiring board or the like, it is effective in applications where securing a gap with the printed wiring board poses a problem.
When silicone rubber is used, it has a high water vapor permeability, and therefore has the effect of preventing swelling itself.

【0016】この樹脂封止型半導体装置は次のように製
造し得る。すなわちリードフレームのアイランド2に半
導体素子4をAgペースト等のマウント剤3で搭載後、超
音波ボンディング等の手段でボンディングワイヤ5を半
導体素子4の電極部(図示せず)とリード1の間に接続
する。
This resin-sealed semiconductor device can be manufactured as follows. That is, after mounting the semiconductor element 4 on the island 2 of the lead frame with the mount agent 3 such as Ag paste, the bonding wire 5 is provided between the electrode portion (not shown) of the semiconductor element 4 and the lead 1 by means such as ultrasonic bonding. Connecting.

【0017】次にこのボンディングを終了したリードフ
レームを図2に示す様な治具にセットし、シリコーンゴ
ム(例えば東芝シリコーン(株)製TSE325、TS
E3250等)を注型して樹脂板6を成型する。図2に
おいて8はリードフレームの支持台で半導体素子4とボ
ンディングワイヤ5との接触を避ける為、断面がコの字
型の形状をしている。9はアイランド3に接する開口部
を有する注型用の枠型である。図3はこの支持台8、リ
ードフレーム10、枠型9を分離して示した斜視図で、
(a)が枠型9、(b)がリードフレーム10、(c)
が支持台8をそれぞれ示し、この順で重ね合わせられ
る。リードフレーム10は半導体素子が4個搭載できる
4連のリードフレームを模式的に示している。
Next, the lead frame after this bonding is set in a jig as shown in FIG. 2, and a silicone rubber (for example, TSE325 and TS manufactured by Toshiba Silicone Co., Ltd.) is set.
E3250) is cast to mold the resin plate 6. In FIG. 2, reference numeral 8 denotes a lead frame support, which has a U-shaped cross section in order to avoid contact between the semiconductor element 4 and the bonding wire 5. Reference numeral 9 is a frame for casting having an opening in contact with the island 3. FIG. 3 is a perspective view showing the support base 8, the lead frame 10, and the frame die 9 separately.
(A) is a frame mold 9, (b) is a lead frame 10, (c)
Indicate the supports 8, respectively, and they are stacked in this order. The lead frame 10 schematically shows four lead frames in which four semiconductor elements can be mounted.

【0018】図3(c)において突起11はリードフレ
ーム10と注型枠9の固定ないしは位置出しに使用する
ものである。また図3(a)に示す様に注型枠9にはア
イランド2に対応する開口部12が設けられている。受
け穴13は支持台8の突起11に対応するもので、注型
枠9の固定ないしは位置出しを行う。
In FIG. 3 (c), the projection 11 is used for fixing or positioning the lead frame 10 and the casting frame 9. Further, as shown in FIG. 3A, the casting frame 9 is provided with an opening 12 corresponding to the island 2. The receiving hole 13 corresponds to the protrusion 11 of the support base 8 and fixes or positions the casting frame 9.

【0019】この様な支持台8にリードフレーム10を
半導体素子側を下にしてセットする。この時リードフレ
ーム10の送り穴14を前記支持台8の突起11に合わ
せて位置合わせすることができる。続いて注型枠9を開
口部12にアイランド2をはめこむ様にセットする。こ
の時前記突起11を受け穴13に挿入してガイドとする
ことができる。続いて前記開口部12にシリコーンゴム
を前記注型枠9の表面まで注入し硬化させる。その後注
型枠9を取り去ることにより、アイランド2の下に樹脂
板6が形成される。
The lead frame 10 is set on such a support 8 with the semiconductor element side facing down. At this time, the feed hole 14 of the lead frame 10 can be aligned with the protrusion 11 of the support base 8. Subsequently, the casting frame 9 is set in the opening 12 so as to fit the island 2. At this time, the protrusion 11 can be inserted into the receiving hole 13 to serve as a guide. Subsequently, silicone rubber is injected into the opening 12 up to the surface of the casting frame 9 and cured. Then, the casting frame 9 is removed to form the resin plate 6 under the island 2.

【0020】次に前記支持台8より取り外したリードフ
レーム10をトランスファモールドの金型にセットし
て、エポキシ樹脂のトランスファモールドを行い樹脂封
止する。この時図5のようにモールド金型の下型15の
一部が前記樹脂板6に接するようにしておけば、図1に
示すような樹脂封止型半導体装置が得られる。なお図5
において16は上型である。
Next, the lead frame 10 removed from the support base 8 is set in a transfer mold, and epoxy resin transfer molding is performed to perform resin sealing. At this time, if a part of the lower die 15 of the molding die is in contact with the resin plate 6 as shown in FIG. 5, a resin-sealed semiconductor device as shown in FIG. 1 is obtained. Note that FIG.
16 is an upper mold.

【0021】次に本発明の第2の実施例を図6の断面図
を参照して説明する。図6の基本的構成は図1とほぼ同
一なので、同一部分には同一番号を付して構成の説明は
一部省略する。本実施例の樹脂板6’は側面に凹凸が設
けられており、封止樹脂7との接触面積が大きくなると
共に、樹脂板6’の係止力を強めている。従って封止樹
脂7に樹脂板6’の周縁を被覆させなくともよく、薄型
が要求される場合に有効な構成である。図6では凹凸が
複数設けられているが一つであってもよい。
Next, a second embodiment of the present invention will be described with reference to the sectional view of FIG. Since the basic structure of FIG. 6 is almost the same as that of FIG. 1, the same parts are designated by the same reference numerals and the description of the structure is partially omitted. The resin plate 6'of this embodiment is provided with unevenness on its side surface, which increases the contact area with the sealing resin 7 and strengthens the locking force of the resin plate 6 '. Therefore, it is not necessary to cover the peripheral edge of the resin plate 6'with the sealing resin 7, which is an effective configuration when thinness is required. Although a plurality of irregularities is provided in FIG. 6, it may be one.

【0022】この樹脂型半導体装置は次の様にして製造
し得る。マウント、ボンディングの済んだリードフレー
ムを、図7の様に支持台8にセットするところまでは第
1の実施例と同じである。注型枠9’は図8の斜視図に
示す如く9’a、9’bの二つの枠に分かれており、こ
れらを合わせてリードフレームの上にセットする。アイ
ランド2を半開口12’a、12’bが囲んで開口部を
形成する。この開口部の壁面には溝17が掘ってあり、
注入されたシリコーンゴムは溝17を埋めて硬化する。
シリコーンゴムが硬化後前記注型枠9’a、9’bを左
右に開けば、側面に溝が形成された樹脂板6’がアイラ
ンド2の上に形成される。
This resin type semiconductor device can be manufactured as follows. The procedure is the same as that of the first embodiment up to the point where the mounted and bonded lead frame is set on the support base 8 as shown in FIG. The casting frame 9'is divided into two frames 9'a and 9'b as shown in the perspective view of FIG. 8, which are set together on the lead frame. The island 2 is surrounded by the half openings 12'a and 12'b to form openings. A groove 17 is dug in the wall surface of this opening,
The injected silicone rubber fills the groove 17 and hardens.
After the silicone rubber has hardened, the casting frames 9'a and 9'b are opened to the left and right, and a resin plate 6'having a groove on the side surface is formed on the island 2.

【0023】次のトランスファモールド工程では、前記
樹脂板6’がモールド金型の下型に接するようにしてモ
ールドすれば、図6に示す樹脂封止型半導体装置が得ら
れる。 この様にして作成した上記2例の半導体装置
を、最も厳しいリフロー手法として知られる赤外線リフ
ロー(最高温度240℃)に供したが、樹脂クラックや
樹脂板のスリップ、脱落は発生しなかった。
In the next transfer molding step, the resin-sealed semiconductor device shown in FIG. 6 is obtained by molding so that the resin plate 6'contacts the lower mold of the molding die. The thus-fabricated semiconductor devices of the two examples were subjected to infrared reflow (maximum temperature 240 ° C.) known as the most severe reflow method, but no resin cracks, resin plate slips, or falling off occurred.

【0024】以上本発明の実施例を説明したが本発明は
上記実施例に限られるものではなく、発明の主旨に反し
ない範囲で種々の変形を採り得る。例えば上記実施例で
はワイヤボンディングの例を説明したが、TAB(Tape
Automated Bonding)方式を用いることもできる。
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the invention. For example, in the above embodiment, an example of wire bonding was explained, but TAB (Tape
The Automated Bonding method can also be used.

【0025】また樹脂板6もしくは6’を予め別に作成
しておきアイランド2の裏面に接着剤等で接着してもよ
いが、アイランド2の上に直接樹脂板を形成した方が両
者が直接接着しより強い接着力が得られので、上記の製
造方法の方が好ましい。
The resin plate 6 or 6'may be separately prepared in advance and bonded to the back surface of the island 2 with an adhesive or the like. However, if the resin plate is directly formed on the island 2, the two are directly bonded. However, the above-mentioned manufacturing method is preferable because a stronger adhesive force can be obtained.

【0026】[0026]

【発明の効果】上記の如く本発明ではアイランド下に接
着力が強く弾性を有する樹脂板を設けたので、アイラン
ド下に水分が溜まりその気化により封止樹脂にクラック
が生ずることが無い。例え水分が溜まったとしても樹脂
板は弾力性を有するので気化による応力を吸収できる。
さらに樹脂板を封止樹脂でその周辺を被覆するか、樹脂
板の側面に凹凸を設けて封止樹脂による係止力を強めた
ので、気化による圧力で樹脂板が脱落することもない。
加えて被覆または凹凸で樹脂板と封止樹脂の接着パスが
長くなるので、両者の間に通気路が生じて耐湿性を劣化
させることもなく、信頼性向上に極めて大なる効果を奏
する。
As described above, according to the present invention, since the resin plate having a strong adhesive force and elasticity is provided under the island, moisture does not accumulate under the island and the vaporization thereof prevents the sealing resin from cracking. Even if water is collected, the resin plate has elasticity so that it can absorb stress due to vaporization.
Further, since the resin plate is covered with a sealing resin at the periphery thereof or the side surface of the resin plate is provided with irregularities to enhance the locking force of the sealing resin, the resin plate will not fall off due to the pressure due to vaporization.
In addition, since the adhesive path between the resin plate and the sealing resin becomes long due to the coating or the unevenness, a ventilation path is not formed between the both and the humidity resistance is not deteriorated, and the reliability is greatly improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例に係わる樹脂封止型半導
体装置の要部断面図。
FIG. 1 is a cross-sectional view of essential parts of a resin-sealed semiconductor device according to a first embodiment of the present invention.

【図2】本発明の第1の実施例における樹脂板の製造方
法を説明した断面図。
FIG. 2 is a sectional view illustrating a method for manufacturing a resin plate according to the first embodiment of the present invention.

【図3】図2の製造方法を分解して示した斜視図で、
(a)は枠型を、(b)はリードフレームを、(c)は
支持台を示す。
3 is an exploded perspective view showing the manufacturing method of FIG.
(A) shows a frame type, (b) shows a lead frame, (c) shows a support stand.

【図4】本発明の第1の実施例におけるトランスファモ
ールドを説明する断面図。
FIG. 4 is a sectional view illustrating a transfer mold according to the first embodiment of the present invention.

【図5】本発明の第2の実施例に係わる樹脂封止型半導
体装置の要部断面図。
FIG. 5 is a cross-sectional view of essential parts of a resin-sealed semiconductor device according to a second embodiment of the present invention.

【図6】本発明の第2の実施例における樹脂板の製造方
法を説明した断面図。
FIG. 6 is a sectional view illustrating a method of manufacturing a resin plate according to a second embodiment of the present invention.

【図7】本発明の第2の実施例の製造方法で使用する枠
型の斜視図。
FIG. 7 is a perspective view of a frame mold used in the manufacturing method according to the second embodiment of the present invention.

【図8】樹脂封止型半導体装置の代表例を示す一部切り
欠き斜視図。
FIG. 8 is a partially cutaway perspective view showing a typical example of a resin-encapsulated semiconductor device.

【図9】従来技術に係わる樹脂封止型半導体装置の要部
断面図。
FIG. 9 is a cross-sectional view of essential parts of a resin-sealed semiconductor device according to a conventional technique.

【図10】従来技術の樹脂封止型半導体装置における樹
脂クラック発生メカニズムを説明する断面図。
FIG. 10 is a cross-sectional view illustrating a resin crack generation mechanism in a conventional resin-sealed semiconductor device.

【図11】従来技術に係わる他の樹脂封止型半導体装置
の要部断面図。
FIG. 11 is a cross-sectional view of essential parts of another resin-encapsulated semiconductor device according to the related art.

【符号の説明】[Explanation of symbols]

1 … リード 2 … アイランド 3 … マウント剤 4 … 半導体素子 5 … ボンディングワイヤ 6 … 樹脂板 7 … 封止樹脂 1 ... Lead 2 ... Island 3 ... Mounting agent 4 ... Semiconductor element 5 ... Bonding wire 6 ... Resin plate 7 ... Sealing resin

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子と、この半導体素子を搭載す
るアイランドと、前記半導体素子の電極部と電気的に接
続される複数のリードと、前記アイランドの前記半導体
素子を搭載しない主面下に付着形成された弾性を有する
樹脂板と、前記半導体素子と前記アイランドと前記リー
ドとを封止すると共に、前記樹脂板の側面および周縁部
を接着被覆する封止樹脂とを具備することを特徴とする
樹脂封止型半導体装置。
1. A semiconductor element, an island on which the semiconductor element is mounted, a plurality of leads electrically connected to an electrode portion of the semiconductor element, and an island below the main surface of the island on which the semiconductor element is not mounted. It is characterized by comprising a formed elastic resin plate, and a sealing resin that seals the semiconductor element, the island, and the lead, and that adhesively coats the side surface and the peripheral portion of the resin plate. Resin-sealed semiconductor device.
【請求項2】 半導体素子と、この半導体素子を搭載す
るアイランドと、前記半導体素子の電極部と電気的に接
続される複数のリードと、前記アイランドの前記半導体
素子を搭載しない主面下に付着形成され、その側面に凹
凸を有する樹脂板と、前記半導体素子と前記アイランド
と前記リードとを封止すると共に、前記樹脂板の側面を
接着する封止樹脂とを具備することを特徴とする樹脂封
止型半導体装置。
2. A semiconductor element, an island on which the semiconductor element is mounted, a plurality of leads electrically connected to an electrode portion of the semiconductor element, and an island below the main surface of the island on which the semiconductor element is not mounted. A resin characterized by comprising a resin plate which is formed and has irregularities on its side surface, and a sealing resin which seals the semiconductor element, the island and the lead, and adheres the side surface of the resin plate. Sealed semiconductor device.
【請求項3】 半導体素子をリードフレームのアイラン
ドにマウントする工程と、前記半導体素子の電極と前記
リードフレームのリードとを電気的に接続する工程と、
前記アイランドの半導体素子が搭載されない主面に、硬
化後弾性を有する樹脂を、枠型を用いて板状に注型し硬
化させ樹脂板を形成する工程と、前記半導体素子と前記
アイランドと前記リードと、前記樹脂板の少なくとも中
央部を除いて封止樹脂で封止する工程とを具備すること
を特徴とする樹脂封止型半導体装置の製造方法。
3. A step of mounting a semiconductor element on an island of a lead frame, and a step of electrically connecting an electrode of the semiconductor element and a lead of the lead frame,
A step of casting a resin having elasticity after curing into a plate shape using a frame mold and curing the resin on the main surface of the island on which the semiconductor element is not mounted; and forming the resin plate, the semiconductor element, the island, and the leads. And a step of sealing with a sealing resin except at least the central portion of the resin plate, the method for manufacturing a resin-sealed semiconductor device.
JP6015659A 1994-02-10 1994-02-10 Resin sealed semiconductor device and its manufacturing method Pending JPH07226460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6015659A JPH07226460A (en) 1994-02-10 1994-02-10 Resin sealed semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6015659A JPH07226460A (en) 1994-02-10 1994-02-10 Resin sealed semiconductor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPH07226460A true JPH07226460A (en) 1995-08-22

Family

ID=11894870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6015659A Pending JPH07226460A (en) 1994-02-10 1994-02-10 Resin sealed semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPH07226460A (en)

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