JPH07211957A - Method for copying molecular pattern - Google Patents
Method for copying molecular patternInfo
- Publication number
- JPH07211957A JPH07211957A JP6002087A JP208794A JPH07211957A JP H07211957 A JPH07211957 A JP H07211957A JP 6002087 A JP6002087 A JP 6002087A JP 208794 A JP208794 A JP 208794A JP H07211957 A JPH07211957 A JP H07211957A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- transfer
- molecular
- replicating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000012546 transfer Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000005660 hydrophilic surface Effects 0.000 claims abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 11
- 230000003362 replicative effect Effects 0.000 claims description 8
- 230000010076 replication Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002120 nanofilm Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 238000007385 chemical modification Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- SJBBXFLOLUTGCW-UHFFFAOYSA-N 1,3-bis(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC(C(F)(F)F)=C1 SJBBXFLOLUTGCW-UHFFFAOYSA-N 0.000 description 1
- KZMAWJRXKGLWGS-UHFFFAOYSA-N 2-chloro-n-[4-(4-methoxyphenyl)-1,3-thiazol-2-yl]-n-(3-methoxypropyl)acetamide Chemical compound S1C(N(C(=O)CCl)CCCOC)=NC(C=2C=CC(OC)=CC=2)=C1 KZMAWJRXKGLWGS-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000002433 hydrophilic molecules Chemical class 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002634 lipophilic molecules Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、分子デバイス等におけ
る超微細な分子パターンを複製する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for reproducing an ultrafine molecular pattern in a molecular device or the like.
【０００２】[0002]
【従来の技術】１９８２年に分子素子という概念がＦ．
Ｌ．Ｃａｒｔｅｒによって提案されて以来、この分野の
研究開発はますます活発になってきている。有機分子１
個１個に機能を与えその集合体を形成させれば、たとえ
ばこれまでの集積度とは比べものにならないくらいの超
高密度の半導体素子が形成できる。2. Description of the Related Art In 1982, the concept of molecular device was established by F.S.
L. Since being proposed by Carter, research and development in this field has become increasingly active. Organic molecule 1
By giving a function to each individual and forming an aggregate thereof, it is possible to form, for example, an ultra-high-density semiconductor element which is incomparable with the degree of integration so far.
【０００３】この分子素子の作成技術の一つとしてＬＢ
（ラングミュア−ブロジェット）法が有望である。この
ＬＢ法は親水基と疎水基からなる両親媒性化合物を水面
上に展開し単分子膜を形成し、支持体上にこの単分子膜
をそのまま写し取る方法である。このように作成した膜
は２次元平面内で配列制御されているので、各々の分子
には見られない機能を発現できる。LB is one of the techniques for producing this molecular device.
The (Langmuir-Blodgett) method is promising. The LB method is a method in which an amphipathic compound composed of a hydrophilic group and a hydrophobic group is spread on a water surface to form a monomolecular film, and the monomolecular film is directly copied on a support. Since the membranes thus prepared are array-controlled in a two-dimensional plane, they can exhibit functions not found in each molecule.
【０００４】一方、従来の代表的な原版パターンの複製
技術には、印刷法とリソグラフィーの手法がある。前者
は版の上にインクを載せ紙等にインクを写す方法であ
る。後者は一般に半導体デバイス製造等に用いられ、光
源から出た光をマスクと呼ばれる原版を通して被加工基
板に照射することにより感光性高分子（レジスト）を感
光させエッチング等を施して原版パターンを有する基板
を大量複製するものである。[0006] On the other hand, as a typical representative original pattern duplication technique, there are a printing method and a lithography method. The former is a method of placing ink on a plate and copying the ink onto paper or the like. The latter is generally used in the manufacture of semiconductor devices, etc., and a substrate having a master plate pattern by irradiating the substrate to be processed with light emitted from a light source through a master plate called a mask to expose a photosensitive polymer (resist) to perform etching etc. It is intended to reproduce a large amount of.
【０００５】特に、微細なパターンを複製する場合に、
リソグラフィー法による最小加工線幅は照射した電離放
射線の波長に依存する。すなわち、電離放射線の波長を
短くすれば加工線幅は小さくなる。Especially when reproducing a fine pattern,
The minimum processing line width by the lithography method depends on the wavelength of the ionizing radiation irradiated. That is, the shorter the wavelength of the ionizing radiation, the smaller the processing line width.
【０００６】現在、半導体の製造にはステッパーと呼ば
れる縮小投影露光装置が用いられ、これによりマスクの
パターンが大量複製される。ここで用いられる光源は水
銀灯の紫外線であり最小加工線幅は０．３μｍ程度であ
る。さらにそれよりも微細な加工が必要な場合には電子
線を用いて数十ｎｍ程度の加工が可能である。At present, a reduction projection exposure apparatus called a stepper is used in the manufacture of semiconductors, whereby a large number of mask patterns are reproduced. The light source used here is ultraviolet rays from a mercury lamp, and the minimum processing line width is about 0.3 μm. Further, when finer processing than that is necessary, processing of several tens of nm can be performed using an electron beam.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、リソグ
ラフィー法は１枚ごとに数工程を踏んで所定パターンの
基板を複製する関係上、大量の複製品を短時間に製造す
るという面では限界があった。However, the lithography method has a limitation in that a large number of duplicate products can be produced in a short time because a substrate having a predetermined pattern is duplicated by taking several steps for each wafer. .
【０００８】また、リソグラフィー工程は露光、現像、
エッチング等の複雑な工程（設備）を要するという課題
を有していた。In the lithography process, exposure, development,
There is a problem that complicated steps (equipment) such as etching are required.
【０００９】[0009]
【課題を解決するための手段】本発明は上記の課題に鑑
みてなされたものであり、所定極性の単分子がパターン
状に配列形成された基板表面に該極性と一致（親和性）
または不一致（非親和性）の極性分子からなる転写層を
載置して所定パターンを形成し、次いでこの基板表面に
被転写体を接触させることにより転写層からなるパター
ンを被転写体に転写することを特徴とする分子パターン
複製方法である。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and matches the polarity (affinity) on the surface of a substrate on which a single molecule having a predetermined polarity is arrayed and formed in a pattern.
Alternatively, a transfer layer composed of incompatible (non-affinity) polar molecules is placed to form a predetermined pattern, and then the transfer target is brought into contact with the surface of the substrate to transfer the pattern composed of the transfer layer to the transfer target. It is a molecular pattern replication method characterized by the above.
【００１０】すなわち、本発明はまずはじめに所望のパ
ターンを有する版を作成し、その上に転写すべき分子膜
（転写層）を載せる。この際、版の表面は異なる極性で
あるので結合分子の極性と一致した部分（すなわち、相
互に親和性の部分）にのみ分子膜（インク成分、導電性
分子等）が付着する。これを別の被転写体に圧接し、こ
の分子が別の被転写体に付着する（転写される）ことに
より分子レベルのパターンを有する基板等の製品を複製
する方法である。本発明により、重合官能基がない分子
パターンを転写することが可能であり、光の解像限界以
下の超微細な線幅のパターンも大量複製可能となる。That is, according to the present invention, first, a plate having a desired pattern is prepared, and a molecular film (transfer layer) to be transferred is placed thereon. At this time, since the surfaces of the plates have different polarities, the molecular film (ink component, conductive molecule, etc.) adheres only to the portions that match the polarities of the binding molecules (that is, the portions having mutual affinity). This is a method of replicating a product such as a substrate having a pattern at the molecular level by bringing this molecule into pressure contact with another transferred material and attaching (transferred) the molecules to the other transferred material. According to the present invention, it is possible to transfer a molecular pattern having no polymerization functional group, and it is possible to reproduce a large amount of patterns having an ultrafine line width below the resolution limit of light.
【００１１】以下、本発明を添付図面を用いて説明す
る。まずはじめに極性の異なる表面を有する版を作成す
る。版の作り方としては、親水面を有する金属酸化物層
２を最上表面に有する基板１上に、通常のリソグラフィ
ー工程により金属あるいはレジストパターンを形成す
る。次いでシランカップリング剤溶液中にパターン形成
した基板を浸漬し、温度４０〜１００度で加熱乾燥す
る。次いで溶剤で余分なシランカップリング剤を洗い流
し乾燥させる。最後に金属のエッチャントまたはレジス
ト剥離液により金属またはレジストパターンを除去する
ことにより、親水性の酸化物表面３と親油性のシランカ
ップリングした表面４から成るＰＳ版が得られる。The present invention will be described below with reference to the accompanying drawings. First, a plate having surfaces with different polarities is prepared. As a method of making a plate, a metal or resist pattern is formed on a substrate 1 having a metal oxide layer 2 having a hydrophilic surface on the uppermost surface by a normal lithography process. Then, the patterned substrate is dipped in the silane coupling agent solution and heated and dried at a temperature of 40 to 100 degrees. Then, the excess silane coupling agent is washed away with the solvent and dried. Finally, the metal or resist pattern is removed with a metal etchant or a resist stripping solution to obtain a PS plate having a hydrophilic oxide surface 3 and a lipophilic silane-coupled surface 4.
【００１２】さらに、親水性表面を極性の異なる（親水
性の）シランカップリング剤で化学修飾すれば、ほぼ同
一のレベルにおける極性の異なる表面を有する基板が得
られる（図１（ａ）に示される）。これとは逆に、初め
に親水性のカップリング剤でレジストパターンを除く基
板表面を化学修飾した後レジストパターンを除去し親油
性のカップリング剤で化学修飾することも勿論可能であ
る。Further, by chemically modifying the hydrophilic surface with a silane coupling agent having a different polarity (hydrophilic), a substrate having surfaces having different polarities at substantially the same level can be obtained (shown in FIG. 1 (a)). ). On the contrary, it is of course possible to first chemically modify the substrate surface excluding the resist pattern with a hydrophilic coupling agent, then remove the resist pattern and chemically modify with a lipophilic coupling agent.
【００１３】上述した化学修飾剤はシランカップリング
剤に限定せず、表面に化学修飾部位を有する基板上に、
化学修飾部位と反応して結合を生じさせ得る化学修飾分
子を結合させることによって表面エネルギーの異なる表
面を形成できるものであればよい。The above-mentioned chemical modifying agent is not limited to the silane coupling agent, but may be formed on a substrate having a chemical modifying site on its surface.
Any substance that can form a surface having a different surface energy by binding a chemically modified molecule capable of reacting with the chemically modified site to form a bond may be used.
【００１４】また、従来の印刷に用いられているジアゾ
ナフトキノン系の感光剤を有するＰＳ版を用いてもよい
が、好ましくは解像力の優れる上述の化学修飾を用いて
作成した版がよい。A PS plate having a diazonaphthoquinone type photosensitizer used in conventional printing may be used, but a plate prepared by using the above-mentioned chemical modification having excellent resolution is preferable.
【００１５】本発明で用いられるシランカップリング剤
としては、分子中に、Ｏ（ＣＨ3 ）n （n ＝１〜３）、
ＯＣｌ、ＯＢｒ、Ｏを有するものが好ましい。このシラ
ンカップリング剤は図２に示されるように基板表面に化
学修飾される。このシランカップリング剤に高分子を用
いればさらに基板との結合は強固なものとなる。The silane coupling agent used in the present invention includes O (CH 3 ) n (n = 1 to 3),
Those having OCl, OBr, and O are preferable. This silane coupling agent is chemically modified on the surface of the substrate as shown in FIG. If a polymer is used as the silane coupling agent, the bond with the substrate becomes stronger.
【００１６】次いで、このようにして作成された版に予
め調製した転写すべき分子膜（インク成分、導電性分子
等）５を基板表面に載せる。この際、版の表面は異なる
極性面を有するので極性が一致する部分（転写パターン
面）にのみ分子膜が付着する（図１（ｂ））。次いで、
これを被転写体６に圧接することにより分子膜５が転写
パターン状に被転写体に付着し転写が完了する（図１
（ｃ）、（ｄ））。Next, a molecular film (ink component, conductive molecule, etc.) 5 to be transferred, which is prepared in advance, is placed on the surface of the substrate on the plate thus prepared. At this time, since the surface of the plate has different polar surfaces, the molecular film adheres only to the portions (transfer pattern surface) having the same polarity (FIG. 1 (b)). Then
When this is pressed against the transferred body 6, the molecular film 5 adheres to the transferred body in a transfer pattern and the transfer is completed (see FIG. 1).
(C), (d)).
【００１７】本発明で用いられる分子膜５（転写層）は
いかなる極性分子から成っていてもよいが、ＬＢ（ラン
グミュア−ブロジェット）膜のような規則正しく配列し
た膜が分子素子を作成する上で望ましい。版の上に分子
膜５を載せる方法としては、上述のように水面上の単分
子膜を写し取るＬＢ法または水平付着法がある。その他
にスピンコート法、浸漬法、ＯＭＢＥ（有機分子線エピ
タキシー）法、蒸着法、ＣＶＤ法がある。The molecular film 5 (transfer layer) used in the present invention may be composed of any polar molecule, but a regularly arranged film such as an LB (Langmuir-Blodgett) film is used to form a molecular element. desirable. As a method of placing the molecular film 5 on the plate, there is the LB method or the horizontal attachment method of copying the monomolecular film on the water surface as described above. Other methods include spin coating, dipping, OMBE (organic molecular beam epitaxy), vapor deposition, and CVD.
【００１８】[0018]
【実施例】以下、本発明の分子パターン複製方法の一実
施例を挙げて本発明をさらに具体的に説明する。EXAMPLES The present invention will be described in more detail with reference to an example of the molecular pattern duplication method of the present invention.
【００１９】石英基板上にクロムを３０ｎｍスパッタリ
ング法で成膜し、ＥＢレジストを塗布し、電子線を照射
し、現像工程およびエッチング工程を経て０．１μｍの
ライン＆スペースのクロムパターンを形成した。次に親
油性のシランカップリング剤（オクタデシルトリメトキ
シシラン：溶媒トルエン）に基板を５分間室温で浸漬し
た。次に温度７０度で１５分間加熱乾燥した。次にクロ
ムのエッチャントでクロムパターンを剥離し、次に溌油
性のシランカップリング剤（溶媒1,3-ビストリフルオロ
メチルベンゼン）に基板を５分間室温で浸漬した。次に
温度７０度で１５分間加熱乾燥した。これにより溌油面
と親油面を有する版が完成した。この版をＦＦＭ（摩擦
力顕微鏡）で摩擦力の差を測定することによりパターン
を確認した。Chromium was deposited on a quartz substrate by a 30 nm sputtering method, an EB resist was applied, an electron beam was irradiated, and a chromium pattern having a line and space of 0.1 μm was formed through a developing process and an etching process. Next, the substrate was immersed in a lipophilic silane coupling agent (octadecyltrimethoxysilane: solvent toluene) for 5 minutes at room temperature. Next, it was heated and dried at a temperature of 70 degrees for 15 minutes. Next, the chromium pattern was removed with a chromium etchant, and then the substrate was immersed in an oil-repellent silane coupling agent (solvent 1,3-bistrifluoromethylbenzene) for 5 minutes at room temperature. Next, it was heated and dried at a temperature of 70 degrees for 15 minutes. As a result, a plate having an oil-repellent surface and a lipophilic surface was completed. The pattern was confirmed by measuring the difference in frictional force of this plate with an FFM (friction force microscope).
【００２０】次いで、クロロホルム溶液に溶かしたステ
アリン酸を水面上に展開、圧縮し単分子膜を作成し、こ
の単分子膜を表面圧３０ｍＮ／ｃｍ2 で上記の版にＬＢ
法を用いて２層累積した。次に単分子膜が形成された版
に対してカーボンの支持体を圧着し、この支持体に単分
子膜を転写してパターンを複製した。このパターンをＡ
ＦＭ（原子間力顕微鏡）で確認した。Next, stearic acid dissolved in a chloroform solution is spread on the water surface and compressed to form a monomolecular film, and this monomolecular film is LB on the plate at a surface pressure of 30 mN / cm 2.
Two layers were accumulated using the method. Next, a carbon support was pressure-bonded to the plate on which the monomolecular film was formed, and the monomolecular film was transferred to this support to duplicate the pattern. This pattern is A
It was confirmed by FM (atomic force microscope).
【００２１】本実施例により最小線幅が約９０ｎｍの微
細なパターンを有する複製物を大量に製造することがで
きた。これにより、ナノメーターオーダの大量複製が可
能となり、高集積度のメモリー、デバイス等の作製が可
能となる。According to this embodiment, it was possible to manufacture a large number of duplicates having a fine pattern with a minimum line width of about 90 nm. As a result, large-scale replication of nanometer order is possible, and it becomes possible to manufacture highly integrated memories, devices, and the like.
【図１】本発明の分子パターン複製方法の一実施例を示
す工程断面図である。FIG. 1 is a process sectional view showing an embodiment of a molecular pattern duplication method of the present invention.
【図２】本発明の分子パターン複製方法に用いられる版
の表面の化学修飾処理を示す説明図である。FIG. 2 is an explanatory view showing a chemical modification treatment of the surface of a plate used in the molecular pattern duplication method of the present invention.
１ 基板 ２ 酸化物層 ３ 親油性分子（表面） ４ 親水性分子（表面） ５ 分子膜 ６ 被転写体 1 substrate 2 oxide layer 3 lipophilic molecule (surface) 4 hydrophilic molecule (surface) 5 molecular film 6 transferred material
Claims (10)
された基板表面に該極性と一致または不一致の極性分子
からなる転写層を載置して所定パターンを形成し、次い
でこの基板表面に被転写体を接触させることにより前記
転写層からなるパターンを前記被転写体に転写すること
を特徴とする、分子パターン複製方法。1. A transfer layer composed of polar molecules having the same or different polarities is placed on a surface of a substrate on which single molecules of a predetermined polarity are arranged in a pattern to form a predetermined pattern, and then the surface of the substrate is formed. A method for replicating a molecular pattern, which comprises transferring a pattern composed of the transfer layer onto the transfer target by bringing the transfer target into contact with the transfer target.
り調製する、請求項１記載の分子パターン複製方法。2. The molecular pattern replication method according to claim 1, wherein the transfer layer is prepared by the LB method or the horizontal deposition method.
る、請求項１記載の分子パターン複製方法。3. The method for replicating a molecular pattern according to claim 1, wherein the transfer layer is prepared by a spin coating method.
り調製する、請求項１記載の分子パターン複製方法。4. The method for replicating a molecular pattern according to claim 1, wherein the transfer layer is prepared by an OMBE method or a vapor deposition method.
項１記載の分子パターン複製方法。5. The method for replicating a molecular pattern according to claim 1, wherein the transfer layer is prepared by a dipping method.
とする、請求項１記載の分子パターン複製方法。6. The method for replicating a molecular pattern according to claim 1, wherein the transfer layer is composed of biomolecules.
０ｎｍ以下であることを特徴とする、請求項１記載の分
子パターン複製方法。7. The minimum line width of the transferred pattern is 10
The molecular pattern replication method according to claim 1, wherein the method is 0 nm or less.
は金属酸化物層を有する該基板表面にレジスト等でパタ
ーンを形成し親油性部位を有するシランカップリング剤
を前記表面に化学修飾して親油性パターンを形成した後
にレジストパターンを除去することにより形成された親
水面および親油面を表面に有することを特徴とする、請
求項１〜８のいずれか１項に記載の分子パターン複製方
法。8. The substrate has a hydrophilic silicon oxide film or a metal oxide layer, a pattern is formed on the surface of the substrate with a resist or the like, and a silane coupling agent having a lipophilic site is chemically modified on the surface. The method for replicating a molecular pattern according to any one of claims 1 to 8, characterized in that the surface has a hydrophilic surface and a lipophilic surface formed by removing the resist pattern after forming the lipophilic pattern. .
に親水性のシランカップリング剤を化学修飾することに
より形成された親水面および親油面を表面に有する、請
求項８記載の分子パターン複製方法。9. The molecular pattern according to claim 8, wherein the substrate has a hydrophilic surface and a lipophilic surface formed by chemically modifying a hydrophilic silane coupling agent after forming the lipophilic pattern on the surface. How to duplicate.
学修飾部位と反応して結合を生じさせ得る化学修飾分子
をパターン状に結合させることにより化学修飾結合部分
を所望パターン状に形成し、該化学修飾分子の極性と一
致または不一致の極性分子からなる転写層を転写パター
ンを形成し次いでこの基板表面に被転写体を接触させる
ことにより前記転写パターンを前記被転写体に転写する
ことを特徴とする、分子パターン複製方法。10. A chemically modified binding portion is formed in a desired pattern by binding a chemically modified molecule capable of reacting with the chemically modified site to form a bond on the surface of a substrate having the chemically modified site in a desired pattern. A transfer layer formed of polar molecules having the same or different polarities as those of the chemically modified molecule to form a transfer pattern, and then the transfer target is brought into contact with the surface of the substrate to transfer the transfer pattern to the transfer target. A method for replicating a molecular pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00208794A JP4312841B2 (en) | 1994-01-13 | 1994-01-13 | Molecular pattern replication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00208794A JP4312841B2 (en) | 1994-01-13 | 1994-01-13 | Molecular pattern replication method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009102327A Division JP2009172766A (en) | 2009-04-20 | 2009-04-20 | Method for duplicating molecular pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07211957A true JPH07211957A (en) | 1995-08-11 |
| JP4312841B2 JP4312841B2 (en) | 2009-08-12 |
Family
ID=11519571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00208794A Expired - Lifetime JP4312841B2 (en) | 1994-01-13 | 1994-01-13 | Molecular pattern replication method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4312841B2 (en) |
-
1994
- 1994-01-13 JP JP00208794A patent/JP4312841B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4312841B2 (en) | 2009-08-12 |
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