JPH07201784A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To smooth edges of semiconductor chips cut from a semiconductor wafer so that dust or flakes of silicon may not appear. CONSTITUTION:A method of manufacturing a semiconductor device comprises the steps of attaching a semiconductor wafer 1 face up to an adhesive tape 2, cutting the semiconductor wafer to form grooves 1b reaching the tape, and smoothing the side walls of the grooves in the wafer by etching.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cutting a semiconductor substrate to divide it into semiconductor chips, and more particularly to improving the surface condition of the sidewall of a cutting groove of the semiconductor substrate.

To cut a semiconductor substrate into semiconductor chips, a dicer is used to cut the semiconductor substrate into a semiconductor chip with a grindstone. However, in this cutting method, when the semiconductor substrate is silicon, silicon pieces adhere and remain on the sidewalls of the cutting groove and on the surface of the semiconductor chip, which may damage the cover film formed on the surface of the semiconductor substrate or cause the silicon pieces to remain. If it remains between the conductive parts, a short circuit occurs to deteriorate the quality of the semiconductor device.

Under the circumstances as described above, there is a demand for a method of manufacturing a semiconductor device capable of removing a failure caused by a silicon piece adhering and remaining on a cut surface of a semiconductor chip or a surface of the semiconductor chip. ing.

[0004]

2. Description of the Related Art A conventional method of manufacturing a semiconductor device will be described in detail with reference to FIG. 3A to 3C are side sectional views showing a conventional method of manufacturing a semiconductor device in the order of steps.

In the conventional method of manufacturing a semiconductor device,
First, as shown in FIG. 3A, the semiconductor substrate 1 is attached to the surface of the adhesive surface 2a of the tape 2 with the element forming surface 1a facing upward, and the tape 2 is placed on the surface of the stage 4 of the dicer. .

Next, as shown in FIG. 3B, the entire thickness of the semiconductor substrate 1 is cut by using a grindstone 5 of a dicer rotating at high speed to form a cut groove 1b, and at the same time, the surface of the tape 2 is cut. The semiconductor substrate 1 is divided into the semiconductor chips 1c by forming the cutting grooves 2b.

When the semiconductor substrate 1 is cut by the grindstone 5 rotating at such a high speed and divided into the semiconductor chips 1c, minute irregularities as shown in FIG. 3 (c) are formed on the side walls of the cutting groove 1b. Therefore, a minute silicon piece 1d is formed on the side wall of this cutting groove 1b.
May adhere, and the silicon piece 1d may peel off from the side wall of the cut groove 1b in the subsequent assembly process.

[0008]

In the conventional method for manufacturing a semiconductor device described above, a semiconductor substrate is attached to a tape, and the semiconductor substrate is cut using a grinder of a dicer and divided into semiconductor chips. Asperities are formed on the side surfaces of the cutting groove of the semiconductor chip and become rough, and minute silicon pieces adhere to the side walls of the cutting groove.

For this reason, when a semiconductor device is assembled using semiconductor chips that have been cut and divided, silicon pieces peeled off from the side surfaces of the cutting grooves may damage the surface of the semiconductor chip during the assembly process, or as shown in FIG. If the silicon pieces 1d are attached between the leads 6 formed on the semiconductor chip with a fine pitch, there is a problem that a short circuit failure occurs.

In view of the above situation, the present invention provides a method for manufacturing a semiconductor device, which is capable of preventing the generation of silicon fragments by forming irregularities on the cut surface of a semiconductor chip. It is intended to be provided.

[0011]

A method of manufacturing a semiconductor device according to the present invention comprises a step of attaching a semiconductor substrate to the surface of an adhesive surface of a tape with the element forming surface facing upward, and cutting the entire thickness of the semiconductor substrate. To form a cutting groove by etching and a step of smoothing the side wall of the cutting groove of the semiconductor substrate by etching.

[0012]

That is, in the present invention, the semiconductor substrate is pasted on the surface of the adhesive surface of the tape with the element forming surface facing upward, a resist film is formed on the element forming surface of the semiconductor substrate, and then the semiconductor substrate is formed on this semiconductor substrate. The resist film at the position corresponding to the cutting groove to be formed is removed, an opening groove having a width wider than the width of the cutting groove to be formed is formed, and a grindstone having substantially the same thickness as the width of the cutting groove to be formed is formed. Since the entire thickness of this semiconductor substrate is cut to form a cutting groove, the semiconductor substrate can be cut by protecting the element formation surface of the semiconductor substrate, and the etching process is performed thereafter. It becomes possible to smooth the side wall of the groove.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 2 are views showing a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps.

In the method of manufacturing a semiconductor device according to one embodiment of the present invention, first, as shown in FIG.
The semiconductor substrate 1 is attached to the surface of the adhesive surface 2a of the tape 2 with the side 1a facing up, and the resist film 3 is formed on the element forming surface 1a of the semiconductor substrate 1 and then shown in FIGS. 1 (b) and 1 (c). As described above, the resist film 3 at a position corresponding to the cutting groove to be formed on the semiconductor substrate 1 is removed to form an opening groove 3a wider than the width of the cutting groove to be formed, and the tape 2 is used as a dicer. It is placed on the surface of the stage 4.

Next, as shown in FIG. 2 (a), the entire thickness of this semiconductor substrate 1 is cut by using a grindstone 5 of a dicer having the same thickness as the width of a cutting groove to be formed and rotating at a high speed. The semiconductor substrate 1 is divided into semiconductor chips 1c by forming the cutting grooves 1b on the surface of the tape 2 at the same time as forming the cutting grooves 1b.

When the semiconductor substrate 1 is cut by the grindstone 5 rotating at such a high speed and divided into the semiconductor chips 1c, minute irregularities as shown in FIG. 2 (b) are formed on the side walls of the cutting groove 1b. Therefore, as shown in FIG. 2C, the side wall of the cut groove 1b of the semiconductor substrate 1 is smoothed by wet etching using hydrofluoric acid.

Finally, as shown in FIG. 2 (d), the resist film 3
Is removed, the semiconductor chip 1c is peeled off from the tape 2 and stored in the chip tray. After the resist film 3 is formed on the surface of the semiconductor substrate 1 in this way, the opening groove 3a of the resist film 3 is formed in the portion of the semiconductor substrate 1 where the cutting groove 1b is to be formed, and the semiconductor substrate 1 is cut to form a semiconductor. Since it is separated into the chips 1c, the semiconductor substrate 1 can be cut in a state where the element forming surface 1a of the semiconductor substrate 1 is protected, and since the etching process is performed after cutting the semiconductor substrate 1, the cut groove 1b of the semiconductor substrate 1 is cut. It becomes possible to smooth the side wall of the.

[0018]

As is apparent from the above description, according to the present invention, it is possible to prevent the silicon pieces from adhering and remaining on the side wall of the semiconductor chip by improving the extremely simple process. Therefore, it is possible to provide a method for manufacturing a semiconductor device, which can be expected to have a significant quality improvement effect.

[Brief description of drawings]

FIG. 1 is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present invention in process order (1)

FIG. 2 is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps (2)

FIG. 3 is a side sectional view showing a conventional method of manufacturing a semiconductor device in the order of steps.

FIG. 4 is a diagram showing a problem of a conventional method of manufacturing a semiconductor device.

[Explanation of symbols]

 1 semiconductor substrate 1a element forming surface 1b cutting groove 1c semiconductor chip 1d silicon piece 2 tape 2a adhesive surface 2b cutting groove 3 resist film 3a opening groove 4 mounting stage 5 grindstone 6 leads

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Claims (3)

[Claims] 1. A semiconductor substrate with the element formation surface (1a) facing up.
(1) is attached to the surface of the adhesive surface (2a) of the tape (2), a step of cutting the entire thickness of the semiconductor substrate (1) to form a cutting groove (1b), Cut groove (1b) in semiconductor substrate (1)
And a step of smoothing a side wall of the semiconductor device. 2. Prior to cutting the semiconductor substrate (1), a resist film (3) exposing a region to be cut of the semiconductor substrate (1) is formed, and after cutting the semiconductor substrate (1). 2. The method for manufacturing a semiconductor device according to claim 1, wherein the etching process is performed using the resist film (3) as a mask. 3. The cutting of the semiconductor substrate (1) is performed using a grindstone (5) having substantially the same thickness as the width of the cutting groove (1b), and the resist film (3) is The semiconductor substrate (1) is provided with an opening groove (3a) having a width wider than that of the cutting groove (1b).
2. The method for manufacturing a semiconductor device according to claim 1, wherein the area to be cut is exposed.