JPH072012B2 - Switching power supply - Google Patents

Switching power supply

Info

Publication number
JPH072012B2
JPH072012B2 JP2169787A JP16978790A JPH072012B2 JP H072012 B2 JPH072012 B2 JP H072012B2 JP 2169787 A JP2169787 A JP 2169787A JP 16978790 A JP16978790 A JP 16978790A JP H072012 B2 JPH072012 B2 JP H072012B2
Authority
JP
Japan
Prior art keywords
circuit
power supply
switching power
insulating metal
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2169787A
Other languages
Japanese (ja)
Other versions
JPH0469056A (en
Inventor
彰 岡村
高久 牧野
徳雄 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2169787A priority Critical patent/JPH072012B2/en
Publication of JPH0469056A publication Critical patent/JPH0469056A/en
Publication of JPH072012B2 publication Critical patent/JPH072012B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 本発明は入出力間が絶縁されるコンバータ型のスイッチ
ング電源装置に関し、詳細には、2枚の絶縁金属基板上
にその1次側回路および2次側回路をそれぞれ実装した
スイッチング電源装置に関する。
The present invention relates to a converter type switching power supply device in which input and output are insulated from each other, and more specifically, to a primary side circuit on two insulating metal substrates. And a switching power supply device in which a secondary circuit is mounted.

(ロ) 従来の技術 第5図はフライバック方式のスイッチング電源回路を示
す。
(B) Prior Art FIG. 5 shows a flyback type switching power supply circuit.

図示するスイッチング電源回路は1次巻線と2次巻線が
逆極性であって、入力VINと出力VOUTを絶縁するトラン
スT、入力VINからトランスTに流れる電流を制御する
スイッチング・トランジスタあるいはパワーMOSFET等の
スイッチング素子Q、数+KHzの一定周波数であって、
帰還信号によりデューティが変更されるパルスをスイッ
チング素子Qの制御電極に出力するPWM回路(60)、ト
ランスTのリーケージ・インダクタンスに蓄積されるエ
ネルギーを放出するためのスナバ回路(66)、スイッチ
ング素子Qの電流をモニタして過電流保護を行う電流検
出器(64)、電源回路の熱暴走を防止する温度検出器
(62)、トランスTの出力電圧を整流平滑するそれぞれ
ダイオードD3、コンデンサC2、出力VOUTの定電圧制御お
よび過電圧制御を行う電圧検出器(68)、この電圧検出
器(68)の出力を絶縁帰還するホトカプラ(70)等から
構成される。
Switching power supply circuit shown is a primary winding and a secondary winding opposite polarity transformer T to insulate the input V IN and the output V OUT, switching transistor for controlling a current flowing from the input V IN to the transformer T Or a switching element Q such as power MOSFET, a constant frequency of several + KHz,
A PWM circuit (60) that outputs a pulse whose duty is changed by a feedback signal to the control electrode of the switching element Q, a snubber circuit (66) for discharging energy accumulated in the leakage inductance of the transformer T, a switching element Q Current detector (64) that monitors the current of the device and protects against overcurrent, temperature detector (62) that prevents thermal runaway of the power supply circuit, diode D 3 that rectifies and smoothes the output voltage of the transformer T, capacitor C 2 , A voltage detector (68) for performing constant voltage control and overvoltage control of the output V OUT , a photocoupler (70) for insulating and feeding back the output of the voltage detector (68), and the like.

次に、上記構成されるスイッチング電源回路の動作を説
明する。
Next, the operation of the switching power supply circuit configured as described above will be described.

PWM回路(60)の出力パルスがハイレベルとなってスイ
ッチング素子Qがオンすると、入力VIN−トランスTの
一次巻線−スイッチング素子Qの閉回路が形成されてト
ランスTの1次巻線に1次関数的に増加する電流が流れ
る。このとき、トランスTの2次巻線出力はダイオード
D3により阻止されるためトランスTを介する電力の伝達
は行われず、1次巻線へ供給されたエネルギーは全てト
ランスT内に蓄積される。そして、PWM回路(60)の出
力パルスがローレベルとなってスイッチング素子Qがオ
フすると、1次巻線に逆起電力が発生し、この逆起電力
に基づく2次巻線出力がダイオードD3を介してコンデン
サC2に充電され出力VOUTとなる。
When the output pulse of the PWM circuit (60) becomes high level and the switching element Q is turned on, a closed circuit of the input V IN-the primary winding of the transformer T-the switching element Q is formed and the primary winding of the transformer T is formed. A current that linearly increases flows. At this time, the secondary winding output of the transformer T is a diode
Since the electric power is not transmitted through the transformer T because it is blocked by D 3, all the energy supplied to the primary winding is stored in the transformer T. Then, when the output pulse of the PWM circuit (60) becomes low level and the switching element Q is turned off, a counter electromotive force is generated in the primary winding, and the secondary winding output based on this counter electromotive force is output to the diode D 3 It is charged into the capacitor C 2 via and becomes the output V OUT .

上記の動作を行うスイッチング電源回路は高効率である
ため比較的小容量のものではセラミックス等の絶縁基板
上に混成集積回路化することも可能であり、小型、軽量
化が要求される昨今の電気機器の電源装置として好適で
ある。しかしながら、セラミックス等の絶縁基板は概ね
熱伝導能が低いため、発熱量が大きい大容量のスイッチ
ング電源回路を混成集積回路化することができない問題
を有している。
Since the switching power supply circuit that performs the above operation is highly efficient, it is possible to form a hybrid integrated circuit on an insulating substrate such as ceramics if it has a relatively small capacity, and it is necessary to reduce the size and weight of electric circuits these days. It is suitable as a power supply device for equipment. However, since an insulating substrate made of ceramics or the like has a low thermal conductivity, there is a problem in that a large-capacity switching power supply circuit that generates a large amount of heat cannot be formed into a hybrid integrated circuit.

(ハ) 発明が解決しようとする課題 これに対して、基板として絶縁金属基板を使用してスイ
ッチング電源回路を混成集積回路化する場合には放熱の
問題は解決されるものの、安全規格によりスイッチング
電源回路の1次側回路と2次側回路を単一の金属基板上
に形成してはならないとされているため製造工程が煩雑
になる問題を有する。しかも、複数の絶縁金属基板を使
用する場合にはそれぞれの絶縁金属基板から導出される
リードのピッチを整合させることが困難である。さらに
は、外部接続のためのリード数が増加する問題も有す
る。
(C) Problems to be Solved by the Invention On the other hand, when an insulating metal substrate is used as a substrate to make a switching power supply circuit into a hybrid integrated circuit, the heat radiation problem is solved Since the primary side circuit and the secondary side circuit of the circuit must not be formed on a single metal substrate, there is a problem that the manufacturing process becomes complicated. Moreover, when a plurality of insulating metal substrates are used, it is difficult to match the lead pitches derived from the respective insulating metal substrates. Furthermore, there is a problem that the number of leads for external connection increases.

従って、本発明は回路パターン形成工程、素子実装工程
等を単一の基板を使用するものと同等に簡素化すること
ができるスイッチング電源装置を提供することにある。
Therefore, it is an object of the present invention to provide a switching power supply device capable of simplifying a circuit pattern forming process, an element mounting process, and the like, as well as those using a single substrate.

(ニ) 課題を解決するための手段 本発明は斯る課題に鑑みなされたものであって、スイッ
チング電源回路の1次側回路と2次側回路を第1および
第2の絶縁金属基板上に格別に実装し、この第1および
第2の絶縁金属基板を、2次側回路から1次側回路へ電
圧信号および過電圧信号を絶縁帰還するホトカプラによ
り結合することによって、スイッチング電源回路の1次
側回路と2次側回路間の絶縁距離の問題および製造工程
上に問題等を解決するものである。
(D) Means for Solving the Problems The present invention has been made in view of the above problems, and a primary side circuit and a secondary side circuit of a switching power supply circuit are provided on first and second insulating metal substrates. The first and second insulating metal substrates are mounted in a special manner, and the first and second insulating metal substrates are coupled by a photocoupler for insulating and returning a voltage signal and an overvoltage signal from the secondary side circuit to the primary side circuit. It solves the problem of the insulation distance between the circuit and the secondary circuit and the problem in the manufacturing process.

(ホ) 作用 スイッチング電源回路の1次側回路と2次側回路を格別
に実装した第1および第2の絶縁金属基板をホトカプラ
により結合することによって、一体の金属基板として扱
うことが可能になり、素子実装工程、リード固着工程等
を単一の基板のものと同等に簡素化することが可能にな
る。また、2枚の金属基板をホトカプラにより結合する
ためホトカプラを外部接続するためのリードが低減され
ると共に第1および第2の絶縁金属基板間の距離を精度
良く設定することができる。
(E) Action By connecting the first and second insulated metal boards, which have the primary circuit and the secondary circuit of the switching power supply circuit mounted specially, with a photo coupler, it becomes possible to treat them as an integrated metal board. It is possible to simplify the device mounting process, the lead fixing process, and the like as in the case of using a single substrate. Further, since the two metal substrates are coupled by the photocoupler, the number of leads for externally connecting the photocoupler is reduced, and the distance between the first and second insulating metal substrates can be set accurately.

(ヘ) 実施例 初めに、本発明のスイッチング電源装置の外形並びに構
造の概要を第4図を参照して説明する。なお、本発明の
スイッチング電源装置には従来例の説明の項で説明した
スイッチング電源回路を含む任意のコンバータ型スイッ
チング電源回路が使用できるため回路構成の説明は省略
する。
(F) Example First, the outline of the outer shape and structure of the switching power supply device of the present invention will be described with reference to FIG. Since any converter type switching power supply circuit including the switching power supply circuit described in the description of the conventional example can be used for the switching power supply device of the present invention, the description of the circuit configuration will be omitted.

第4図を参照すると、本発明のスイッチング電源装置は
絶縁トランス(外部接続されるため図示されない)によ
り分離される1次側および2次側回路をそれぞれに実装
した2枚の混成集積回路基板(20)(20)、2枚の混成
集積回路基板(20)(20)のそれぞれの一周辺端から導
出されるリード(56)(58)、2枚の混成集積回路基板
(20)(20)を結合するホトカプラ(50)および枠形状
ケーシング(10)で示されている。
Referring to FIG. 4, the switching power supply device of the present invention includes two hybrid integrated circuit boards each having a primary side circuit and a secondary side circuit separated by an insulating transformer (not shown because they are externally connected) ( 20 (20) (20), leads (56) (58) derived from one peripheral edge of each of the two hybrid integrated circuit boards (20) (20), and two hybrid integrated circuit boards (20) (20) Are shown by a photocoupler (50) and a frame-shaped casing (10).

2枚の混成集積回路基板(20)(20)は同一平面上に所
定間隔離間配置され、その周辺端はケーシング(10)の
段部に接着シート等を使用して固着される。混成集積回
路基板(20)(20)に実装されるスイッチング電源回路
の1次側および2次側回路は混成集積回路基板(20)
(20)とケーシング(10)により形成される独立の封止
空間にそれぞれ配置され、それら回路とトランスとの結
合はリード(56)(58)を介して行われる。また、2次
側回路から1次側回路への電圧並びに過電圧信号の帰還
はホトカプラ(50)により行われる。なお、このホトカ
プラ(50)が配置される露出領域は図示しないカバーに
より封止される。
The two hybrid integrated circuit boards (20) (20) are arranged on the same plane with a predetermined distance therebetween, and their peripheral edges are fixed to the stepped portion of the casing (10) using an adhesive sheet or the like. The primary side and secondary side circuits of the switching power supply circuit mounted on the hybrid integrated circuit board (20) (20) are the hybrid integrated circuit board (20).
They are arranged in independent sealed spaces formed by the (20) and the casing (10), respectively, and the circuits and the transformer are coupled via the leads (56) (58). Further, the feedback of the voltage and the overvoltage signal from the secondary side circuit to the primary side circuit is performed by the photocoupler (50). The exposed region where the photocoupler (50) is arranged is sealed by a cover (not shown).

次に、本発明の特徴をより明らかにするため一実施例の
製造工程を説明する。
Next, the manufacturing process of one embodiment will be described in order to clarify the characteristics of the present invention.

第1図Aは回路部品を実装して混成集積回路基板とする
直前の回路基板の平面図を示す。なお、第1図Bはその
I−I線断面図である。
FIG. 1A is a plan view of a circuit board immediately before mounting a circuit component to form a hybrid integrated circuit board. Note that FIG. 1B is a sectional view taken along the line I-I.

金属基板(20)にはアルミニウム等の厚さ0.5mm〜3mmの
金属基板が使用され、第1図Aに図示されるように、そ
の中央部の矩形の捨孔(24)と共に矩形にプレス打ち抜
きされる。
As the metal substrate (20), a metal substrate having a thickness of 0.5 mm to 3 mm, such as aluminum, is used. As shown in FIG. 1A, the metal substrate (20) is punched into a rectangular shape together with a rectangular waste hole (24) in the center thereof. To be done.

アルミニウムが使用される場合にはこの後陽極酸化処理
により酸化膜が形成され、厚さ18μm〜35μmの銅箔と
厚さ約35μmのポリイミド系あるいはエポキシ系の絶縁
樹脂層(26)の積層体が貼着される。そしてこの銅箔を
所定の形状にエッチングして回路パターン(28)、外部
リードのためのパッド(30)(32)、ホトカプラ(50)
のためのパッド(34)、可変抵抗素子のためのパッド
(36)等が形成される。なお、前記パッド(36)に接続
される可変抵抗素子は定電圧制御のためのレベル設定、
過電圧検出レベル設定、あるいは過電流検出レベル設定
のために使用されるものであり、後の工程で分離される
回路基板の任意の一方、あるいは双方に配置することが
できる。
When aluminum is used, an oxide film is formed by anodic oxidation treatment after this, and a laminate of a copper foil with a thickness of 18 μm to 35 μm and a polyimide-based or epoxy-based insulating resin layer (26) with a thickness of about 35 μm is formed. It is attached. Then, this copper foil is etched into a predetermined shape to form a circuit pattern (28), pads (30) (32) for external leads, and a photocoupler (50).
Pad (34), a pad (36) for a variable resistance element, etc. are formed. The variable resistance element connected to the pad (36) has a level setting for constant voltage control,
It is used for setting the overvoltage detection level or the overcurrent detection level, and can be arranged on any one or both of the circuit boards separated in a later step.

第2図を参照すると、上記のようにして完成された回路
基板にスイッチング電源回路を構成するスイッチング素
子(40)、PWM回路(42)、過電流検出回路(44)、ダ
イオード(46)、過電圧検出回路(48)等の集積回路、
あるいは抵抗、コンデンサ等の素子がチップ形状で表面
実装され、パッド(34)には矩形の捨孔を跨ぐようにホ
トカプラ(50)が表面実装される。また、パッド(30)
(32)にリード(56)(58)が半田固着され、さらには
ワイヤボンディングにより所定の電極と回路パターンと
が接続される。
Referring to FIG. 2, a switching element (40), a PWM circuit (42), an overcurrent detection circuit (44), a diode (46), an overvoltage which constitute a switching power supply circuit on the circuit board completed as described above. Integrated circuits such as detection circuits (48),
Alternatively, elements such as resistors and capacitors are surface-mounted in a chip shape, and the photocoupler (50) is surface-mounted on the pad (34) so as to straddle a rectangular hole. Pads (30)
The leads (56) (58) are soldered and fixed to the (32), and further, predetermined electrodes and circuit patterns are connected by wire bonding.

図示する実施例では、スイッチング電源回路の1次側お
よび2次側回路を実装する混成集積回路基板(20)(2
0)がブリッジ(22)により機械的に接続されて一体形
成であるため、上記した回路素子実装工程および前記し
た回路パターンエッチング工程は単一の基板の処理と同
等に行われる。のみならず、後の工程において分離され
る混成集積回路基板(20)(20)のそれぞれのパッド
(30)(32)のピッチを精度良く設定できるため、それ
ぞれのリード(56)(58)の固着を単一のリードフレー
ムにより行うことが可能となる。
In the illustrated embodiment, a hybrid integrated circuit board (20) (2) on which the primary side and secondary side circuits of a switching power supply circuit are mounted.
0) is mechanically connected by the bridge (22) and is integrally formed, so that the circuit element mounting step and the circuit pattern etching step described above are performed in the same manner as the processing of a single substrate. Not only that, since the pitch of each pad (30) (32) of the hybrid integrated circuit board (20) (20) to be separated in a later process can be set with high accuracy, each lead (56) (58) It becomes possible to perform fixing with a single lead frame.

次いで、素子実装およびリード(56)(58)の固着が完
了した混成集積回路基板(20)は捨孔の左右の回路基板
を接続しているブリッジ(22)およびリードフレーム
(54)がプレス打ち抜きにより除去されて、ホトカプラ
(50)のみにより結合された2枚の混成集積回路基板と
して完成する(第3図参照)。なお、2枚の混成集積回
路基板(20)(20)の間隔はホトカプラ(50)の固着に
より固定されるため、後の工程においても完全規格等に
より定められる基板間隔が保証される。
Next, the hybrid integrated circuit board (20) on which the device mounting and the fixing of the leads (56) (58) are completed, the bridge (22) connecting the circuit boards on the left and right of the waste hole and the lead frame (54) are stamped and punched. Are removed by the process described above and completed as two hybrid integrated circuit boards bonded only by the photocoupler (50) (see FIG. 3). Since the distance between the two hybrid integrated circuit boards (20) and (20) is fixed by fixing the photocoupler (50), the board distance determined by perfect standards or the like can be guaranteed even in the subsequent steps.

(ト) 発明の効果 以上述べたように本発明によれば、 (1) 絶縁金属基板を使用するため放熱特性が良好で
あり、大容量のスイッチング電源装置に対応できる。
(G) Effects of the Invention As described above, according to the present invention, (1) since an insulating metal substrate is used, the heat dissipation characteristics are good, and a large capacity switching power supply device can be accommodated.

(2) スイッチング電源回路の1次側回路と2次側回
路が完全に分離されるため安全規格が満たされるにもか
かわらず、2枚の絶縁金属基板がブリッジにより結合さ
れているため、エッチング、実装工程等を単一の基板処
理と同等に簡素化することができる。
(2) Although the safety standard is satisfied because the primary side circuit and the secondary side circuit of the switching power supply circuit are completely separated, etching is performed because the two insulating metal substrates are connected by the bridge. The mounting process and the like can be simplified to the same level as the single substrate processing.

(3) 2枚の絶縁金属基板がホトカプラにより結合さ
れるためホトカプラを外部接続する場合のリードが削減
されると共に2枚の絶縁金属基板間隔が保証される。
(3) Since the two insulating metal substrates are coupled by the photocoupler, the number of leads for external connection of the photocoupler is reduced and the distance between the two insulating metal substrates is ensured.

(4) 絶縁金属基板によりスイッチング電源回路を構
成する回路素子あるいは内部配線から輻射される雑音が
遮蔽される。
(4) The insulating metal substrate shields noise radiated from the circuit elements or the internal wiring which form the switching power supply circuit.

【図面の簡単な説明】[Brief description of drawings]

第1図Aは実施例に使用される回路基板の平面図、第1
図BはそのI−I線断面図、第2図Aは回路素子を実装
した混成集積回路基板の平面図、第2図BはそのI−I
線断面図、第3図は完成混成集積回路基板の平面図、第
4図は実施例の斜視図、第5図は一般的なスイッチング
電源回路の回路図。 (10)……ケーシング、(20)……混成集積回路基板、
(22)……ブリッジ、(24)……捨孔、(26)……絶縁
樹脂層、(28)……回路パターン、(30)(32)……リ
ード用パッド。
FIG. 1A is a plan view of a circuit board used in the embodiment,
FIG. B is a sectional view taken along the line I-I, FIG. 2A is a plan view of a hybrid integrated circuit board on which circuit elements are mounted, and FIG.
FIG. 3 is a plan view of the completed hybrid integrated circuit board, FIG. 4 is a perspective view of an embodiment, and FIG. 5 is a circuit diagram of a general switching power supply circuit. (10) …… Casing, (20) …… Hybrid integrated circuit board,
(22) …… Bridge, (24) …… Blank hole, (26) …… Insulating resin layer, (28) …… Circuit pattern, (30) (32) …… Lead pad.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】スイッチング電源回路の1次側回路を構成
するスイッチング素子、このスイッチング素子の動作を
制御する回路等の複数の回路素子を実装した第1の絶縁
金属基板と、 スイッチング電源回路の2次側回路を構成するダイオー
ド、過電圧検出回路等の複数の回路素子を実装した第2
の絶縁金属基板と、 スイッチング電源回路の2次側回路から1次側回路へ電
圧信号および過電圧信号を絶縁帰還するホトカプラと、 前記第1および第2の絶縁金属基板に実装されたスイッ
チング電源回路の1次側回路および2次側回路を独立に
封止する空間を備えたケーシングとからなり、 前記ホトカプラは第1および第2の絶縁金属基板を同一
平面上で所定間隔で離間結合することを特徴とするスイ
ッチング電源装置。
1. A switching element constituting a primary side circuit of a switching power supply circuit, a first insulating metal substrate on which a plurality of circuit elements such as a circuit for controlling the operation of the switching element are mounted, and a switching power supply circuit. Second mounting a plurality of circuit elements such as a diode and an overvoltage detection circuit that constitute a secondary circuit
Of an insulating metal substrate, a photocoupler for insulating and returning a voltage signal and an overvoltage signal from a secondary side circuit of a switching power supply circuit to a primary side circuit, and a switching power supply circuit mounted on the first and second insulating metal substrates. And a casing having a space for independently sealing the primary side circuit and the secondary side circuit, wherein the photocoupler separates and couples the first and second insulating metal substrates on the same plane at a predetermined interval. Switching power supply.
【請求項2】前記第1および第2の絶縁金属基板が矩形
の捨孔を形成した単一の絶縁金属基板のブリッジを切断
して形成されることを特徴とする請求項1記載のスイッ
チング電源装置。
2. The switching power supply according to claim 1, wherein the first and second insulating metal substrates are formed by cutting a bridge of a single insulating metal substrate having a rectangular hole. apparatus.
【請求項3】前記捨孔の幅が所要の絶縁規格を満たす大
きさに設定されることを特徴とする請求項2記載のスイ
ッチング電源装置。
3. The switching power supply device according to claim 2, wherein the width of the dead hole is set to a size that satisfies a required insulation standard.
【請求項4】前記第1および第2の絶縁金属基板から導
出されるリードがブリッジの切断による前記単一の絶縁
金属基板の分離前にその一周辺端に固着されることを特
徴とする請求項2記載のスイッチング電源装置。
4. Leads derived from the first and second insulating metal substrates are fixed to one peripheral edge thereof before the single insulating metal substrate is separated by cutting a bridge. Item 2. A switching power supply device according to item 2.
JP2169787A 1990-06-29 1990-06-29 Switching power supply Expired - Lifetime JPH072012B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2169787A JPH072012B2 (en) 1990-06-29 1990-06-29 Switching power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2169787A JPH072012B2 (en) 1990-06-29 1990-06-29 Switching power supply

Publications (2)

Publication Number Publication Date
JPH0469056A JPH0469056A (en) 1992-03-04
JPH072012B2 true JPH072012B2 (en) 1995-01-11

Family

ID=15892871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2169787A Expired - Lifetime JPH072012B2 (en) 1990-06-29 1990-06-29 Switching power supply

Country Status (1)

Country Link
JP (1) JPH072012B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5303167B2 (en) * 2008-03-25 2013-10-02 ローム株式会社 Switch control device and motor drive device using the same

Also Published As

Publication number Publication date
JPH0469056A (en) 1992-03-04

Similar Documents

Publication Publication Date Title
US5959846A (en) Modular surface mount circuit device and a manufacturing method thereof
JP2009043820A (en) High-efficiency module
JPH0748946B2 (en) Switching power supply
JPH072014B2 (en) Switching power supply
JP2810452B2 (en) Switching power supply
US10660193B2 (en) Multilayer substrate
JPH072012B2 (en) Switching power supply
JPH072013B2 (en) Switching power supply
EP0851439B1 (en) Modular surface mount circuit device and a manufacturing method thereof
JP2020010435A (en) Power conversion device
JPH0748543B2 (en) Method for manufacturing hybrid integrated circuit
JPH06276737A (en) Dc-dc converter
JPH0748947B2 (en) Switching power supply
JP2810448B2 (en) Switching power supply
JP2015208200A (en) Power supply device
JP2892089B2 (en) Hybrid multilayer circuit device and hybrid multilayer circuit component
CN216016703U (en) Module power supply radiating through circuit board
JP7081476B2 (en) Circuit board configuration
JP6373901B2 (en) High efficiency module
JPH01157266A (en) Switching regulator
JP2010147171A (en) Electronic circuit device
JP6349874B2 (en) Power supply
JP2021141139A (en) Component built-in substrate and semiconductor module
JPH03145925A (en) Switching power supply
JPH0766361A (en) Power supply device