JPH0719749B2 - Method of forming deposited film - Google Patents

Description

The present invention relates to a deposited film forming method in which heat is used as excitation energy to form a photoconductive film, a semiconductor or an insulating film on a predetermined support, and more specifically, thermal energy By the addition of the above, the raw material gas is excited and decomposed, and the amorphous silicon (hereinafter a-
Abbreviated as Si).

Conventionally, as a method of forming a-Si deposited film, SiH ₄ or Si
Glow discharge deposition method and thermal energy deposition method using ₂ H ₆ as a raw material are known. That is, these deposition methods are
This is a method in which SiH ₄ or Si ₂ H ₆ as a source gas is decomposed by electric energy or thermal energy (excitation energy) to form a deposited film of a-Si on a support. It is used for various purposes as a conductive film, a semiconductor, an insulating film, or the like.

However, in the glow discharge deposition method, in which a deposited film is formed under high-power discharge, it is difficult to control reproducible and stable conditions such as the fact that a uniform discharge distribution state cannot always be obtained. The influence of high-power discharge on the film inside is large, it is difficult to secure the uniformity of the electrical and optical characteristics of the formed film and the stability of quality, the surface of the film is disturbed during deposition, and the inside of the deposited film Is likely to cause defects. In particular, it was very difficult to uniformly form a thick deposited film by this method in terms of electrical and optical characteristics.

On the other hand, also in the thermal energy deposition method, since a high temperature of 400 ° C. or higher is usually required, the support material used is limited, and in addition, useful bonded hydrogen atoms in desired a-Si are released. Since the probability increases, it is difficult to obtain desired characteristics.

So, as one method to solve these problems,
Attention is focused on a low calorific thermal energy deposition method (thermal CVD) of a-Si using a silicon compound other than SiH ₄ and Si ₂ H ₆ as a raw material.

This low calorific thermal energy deposition method uses low-temperature heating instead of glow discharge or high-temperature heating in the above-described method as excitation energy, and a-Si deposited film is produced at a low energy level. It enables you to do it. Further, the lower the temperature, the easier it is to uniformly heat the raw material gas, and it is possible to perform high-quality film formation while maintaining uniformity, with lower energy consumption than the deposition method described above. Is easy to control and stable reproducibility can be obtained. Further, it is not necessary to heat the support to a high temperature, and there is an advantage that the selectivity to the support is widened.

The present invention has been made in view of the above points, and by performing film formation without generating plasma in the deposition chamber by using low-level thermal energy as excitation energy, high quality is maintained while maintaining high quality. It is an object to provide a thermal energy deposition method capable of forming a deposited film containing silicon atoms at a film rate.

Another object of the present invention is to form a high-quality deposited film that secures uniformity of electrical and optical characteristics and stability of quality even when forming a large-area, thick-film deposited film. To provide a way to do it.

As a result of earnest studies, the present invention has revealed that these objects have a general formula: Sin H ₂ n as a raw material gas decomposed by thermal energy.
It has been completed by finding out what is achieved by using a linear silane compound represented by ₊₂ (n ≧ 1) in a mixed state with a halogen compound.

That is, the deposited film forming method of the present invention is performed by using the general formula; Sin in a deposition chamber in which a support held at 150 ° C. to 300 ° C. is placed.
A gaseous atmosphere of a linear silane compound and a halogen compound represented by H ₂ n ₊₂ (n ≧ 1) is formed, and thermal energy is supplied to the deposition chamber without supplying electric energy capable of generating plasma. To excite the compound,
It is characterized in that a deposited film containing silicon atoms is formed on the support.

The raw material for forming the a-Si deposited film used in the method of the present invention is a linear silane compound represented by the general formula; Sin H ₂ n ₊₂ (n ≧ 1), and has a good a- In order to form a Si deposited film, n in the above formula is 1 to 15, preferably 2 to 10,
More preferably, it is 2-6.

However, when such a linear silane compound uses heat energy as excitation energy, efficient excitation and decomposition cannot be obtained, and a good film formation rate cannot be obtained.

Therefore, in the method of the present invention, a halogen compound is mixed with the linear silane compound in order to more efficiently promote the excitation and decomposition of the linear silane compound by thermal energy.

The halogen compound mixed with the linear silane compound in the method of the present invention is a compound containing a halogen atom, and it is possible to more efficiently promote the excitation and decomposition of the linear silane compound by thermal energy. It can be done. Examples of such a halogen compound include Cl ₂ , Br ₂ ,
Examples thereof include halogen gas such as I ₂ and F ₂ .

In the method of the present invention, the ratio of the halogen compound mixed with the a-Si film forming raw material compound is a-
Depending on the type of raw material compound for forming the Si film and the halogen compound, etc., 0.001% by volume to 65% by volume, preferably 0.1 Vo
Used in the range of l% to 70 Vol%.

Next, application of thermal energy to the silicon compound gas introduced into the deposition chamber is performed by using a Joule heat generating element high frequency heating means or the like.

The Joule heat generating element may be a heater such as a heating wire or an electric heating plate, and the high frequency heating means may be induction heating or dielectric heating.

Explaining an embodiment using the Joule heat generating element, the heater is brought into contact with or close to the back surface of the support to conductively heat the surface of the support to thermally excite and decompose the raw material gas in the vicinity of the surface to decompose the decomposition product to the surface of the support. To deposit.

Alternatively, the heater can be placed near the surface of the support.

Hereinafter, the method of the present invention will be described in detail with reference to FIG.

FIG. 1 is a schematic configuration diagram of a deposited film forming apparatus for forming a functional film such as a photoconductive film made of a-Si, a semiconductor film, or an insulator film on a support.

The deposited film is formed inside the deposition chamber 1.

Reference numeral 3 which is placed inside the deposition chamber 1 is a support table on which a support is arranged.

Reference numeral 4 is a heater for heating the support, and the conductor 4 supplies power to the heater 4. A gas introducing pipe for introducing a raw material gas of a-Si and a gas such as a carrier gas used as necessary into the deposition chamber 1 is connected to the deposition chamber 1. The other end of the gas introduction pipe 17 is connected to gas supply sources 9, 10, 11, 12 for supplying the above-mentioned raw material gas and a gas such as a carrier gas used as necessary. In order to measure the flow rate of each gas flowing from the gas supply sources 9, 10, 11, 12 toward the deposition chamber 1, the corresponding flow meters 15-1,
15-2, 15-3, 15-4 correspond to branched gas introduction pipes 17-
It is provided in the middle of 1,17-2,17-3,17-4. Valves 14-1, 14-2, 14-3, 14-4, 16 are installed in front of and behind each flow meter.
-1, 16-2, 16-3, 16-4 are provided, and a predetermined flow rate of gas can be supplied by adjusting these valves. 13
Reference numerals -1, 13-2, 13-3, 13-4 are pressure meters for measuring the pressure on the high pressure side of the corresponding flow meter.

The respective gases that have passed through the flow meter are mixed and introduced into the deposition chamber 1 under reduced pressure by an exhaust device (not shown). The pressure meter 18 measures the total pressure of the mixed gas.

A gas exhaust pipe 20 is connected to the deposition chamber 1 to reduce the pressure inside the deposition chamber 1 and to exhaust the introduced gas. The other end of the gas exhaust pipe is connected to an exhaust device (not shown).

In the present invention, the number of gas supply sources 9, 10, 11, 12 is appropriately set.
It can be increased or decreased.

That is, when using a single source gas, one gas supply source is sufficient. However, when two kinds of raw material gases are mixed and used, two or more are required when a single raw material gas (catalyst gas, carrier gas or the like) is mixed.

Since some raw materials do not become gas at room temperature but remain liquid, a vaporizer (not shown) is installed when using a liquid raw material. Vaporizers include those that utilize heating and boiling, and those that allow a carrier gas to pass through a liquid raw material. The raw material gas obtained by vaporization is introduced into the deposition chamber 1 through a flow meter.

A deposited film made of a-Si can be formed by the method of the present invention using the apparatus shown in FIG. 1 as follows.

First, the support 2 is set on the support base 3 in the deposition chamber 1.

Various materials are used as the support 2 depending on the application of the formed deposited film. As the material capable of forming the support, conductive supports include, for example, NiCl, stainless steel,
Al, Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd and other metals or their alloys, semi-conductive supports, semiconductors such as Si, Ge, and electrically insulating supports , Synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramics,
Paper etc. can be mentioned. The shape and size of the support body 2 are appropriately determined according to the use purpose.

Particularly, in the method of the present invention, the temperature of the support is 150 to 3
Since the temperature can be set to a relatively low temperature of about 00 ° C, a low heat resistance material that cannot be applied to the conventional glow discharge deposition method or the conventional thermal energy deposition method among the materials forming the above support It has also become possible to use supports consisting of

After the support 2 is placed on the support 3 in the deposition chamber 1 in this way, the air in the deposition chamber is exhausted through the gas exhaust pipe 20 by an exhaust device (not shown) to reduce the pressure. The pressure in the deposition chamber under reduced pressure is preferably 5 × 10 ^-5 Torr or less, and more preferably 10 ^-6 Torr or less.

When the electric heater 4 is used as the heat energy applying means, the heater 4 is energized to heat the support 3 to a predetermined temperature when the pressure inside the deposition chamber 1 is reduced. The temperature of the support at this time is 150 to 300 ° C, preferably 200 to 250 ° C.

As described above, since the support temperature is relatively low in the method of the present invention, the support as in the glow discharge deposition method or the thermal energy deposition method using SiH ₄ , Si ₂ H ₆ as a raw material is used. Since no high temperature heating of the body is required, the energy consumption required for this can be saved.

Next, the valve of the supply source 9 in which the gas (one or more) of the raw material compound for forming the a-Si film as described above is stored.
14-1 and 16-1 are opened, and the source gas is fed into the deposition chamber 1.

At this time, the flow rate is adjusted while measuring with the corresponding flow meter 15-1. Normally, the flow rate of raw material gas is 10 to 1000 SC
CM, preferably 20-500 SCCM range.

The pressure of the feed gas is 10 ^-2 ~100Torr the deposition chamber 1, preferably it is desirable that maintained in the range of 10 ^-2 ~1Torr.

In this way, thermal energy is applied to the raw material gas flowing near the surface of the support 2, thermal excitation and thermal decomposition are promoted, and a-Si, which is the product, is deposited on the support.

Since the raw material gas used in the method of the present invention is easily excited and decomposed by thermal energy as described above,
A high film formation rate of about 5 to 50Å / sec can be obtained. Decomposition products other than a-Si, surplus raw material gas not decomposed, and the like are discharged through the gas exhaust pipe 20, while new raw material gas is continuously supplied through the gas introduction pipe 17.

In the method of the present invention, heat energy is used as the excitation energy, but since it is a low heat quantity rather than a high heat quantity, the energy is always uniformly applied to a predetermined space occupied by the source gas to which the energy is to be applied. it can.

There is no effect of high-power discharge as observed in the glow discharge deposition method on the deposited film in the process of formation, and the film surface is not disturbed during deposition and defects in the deposited film do not occur, maintaining uniformity. Meanwhile, the formation of the deposited film is continued.

In this way, an a-Si film is formed on the support 2, and a-
When the desired film thickness of Si is obtained, the application of heat energy from the heater 4 is stopped, the valves 14-1 and 16-1 are closed, and the supply of the raw material gas is stopped. The thickness of the a-Si film is
It is appropriately selected depending on the application of the formed a-Si film.

Next, after driving the exhaust device (not shown) to remove the gas in the deposition chamber, the valve 21 is opened when the temperature of the support and the deposited film reaches room temperature, and the atmosphere is gradually introduced into the deposition chamber. Is returned to normal pressure, and the support on which the a-Si film is formed is taken out.

The a-Si film thus formed on the support by the method of the present invention is an a-Si film excellent in uniformity of electrical and optical characteristics and stability of quality.

In the example of the method of the present invention described above, the deposited film was formed under reduced pressure, but the present invention is not limited to this. It can also be performed under pressure.

According to the method of the present invention as described above, a low calorific thermal energy is used as the excitation energy, and a raw material gas that is easily excited and decomposed by the thermal energy is used, so that a low film formation rate It has become possible to form an a-Si deposited film at an energy level, and it has become possible to form an a-Si deposited film excellent in uniformity of electrical and optical characteristics and stability of quality. Therefore, in the method of the present invention, a support made of a material having low heat resistance, which cannot be applied to the conventional glow discharge deposition method or the conventional thermal energy deposition method, can be used. It has become possible to save the energy consumption required for high temperature heating.

Hereinafter, the method of the present invention will be described in more detail with reference to Examples.

Example 1 Using the apparatus shown in FIG. 1, Si ₂ H ₆ was used as a raw material for forming an a-Si deposited film, and I ₂ was used as a halogen compound.
Was used to form an a-Si (amorphous-Si) film as follows.

First, a support (polyethylene terephthalate) is set on the support base 3 in the deposition chamber 1, the pressure in the deposition chamber 1 is reduced to 10 ⁻⁶ Torr by an exhaust device (not shown) through the gas exhaust pipe 20, and the heater 4 is energized. To maintain the support temperature at 225 ° C,
Next, the valves 14-1, 16 of the raw material supply source 9 filled with Si ₂ H ₆
-1 and the valves 14-5 and 16-5 of the source 29 filled with I ₂ are opened, respectively, and the source gas and the halogen compound gas are deposited in the deposition chamber 1
Introduced in.

At this time, the gas flow rate of I ₂ was adjusted to 20 SCCM so that the gas flow rate of Si ₂ H ₆ was 150 SCCM while measuring with the corresponding flow meters 15-1 and 15-5. Next, the pressure in the deposition chamber was adjusted to 0.1T.
While maintaining at orr, an a-Si layer having a thickness of 5000Å was deposited on the support 2 at a film forming rate of 45Å / sec. The thermal energy was uniformly applied to the gas flowing near the entire surface of the support 2 arranged in the deposition chamber 1. At this time, a
-Decomposition products other than Si and surplus raw material gas not decomposed are discharged through the gas exhaust pipe 20, while new raw material gas and halogen compound gas are continuously supplied through the gas introduction pipes 17 and 30. .

Thus formed by the method of the present invention, a-Si
The evaluation of the film was performed by further forming a comb-shaped Al gap electrode (flow 250 μ, on each of the a-Si films formed on the substrate).
A width of 5 mm is formed, and photocurrent (light irradiation intensity AMI; about 100 mW / c
m ² ) and the dark current were measured, and their photoconductivity σ _P and photoconductivity σ
It was carried out by obtaining the ratio (σ _P / σd) between _P and dark conductivity σd.

The gap electrode is a formed as described above.
-Si film is put in a vapor deposition tank, the pressure of the tank is once reduced to 10 ^-6 Torr, the vacuum degree is adjusted to 10 ^-5 Torr, the vapor deposition rate is 20 Å / sec, and the layer thickness is 1500 Å. , Al was vapor-deposited on the a-Si layer, and this was etched and patterned using a pattern mask having a predetermined shape.

The obtained σ _P value and σ _P / σ d ratio are shown in Table 1.

Examples 2 and 3 a-Si was performed in the same manner as in Example 1 except that Br ₂ (Example 2) or Cl ₂ (Example 3) was used as the halogen compound.
A film was formed, and the obtained a-Si film was evaluated in the same manner as in Example 1. The evaluation results are shown in Table 1.

Examples 4 to 12 As a raw material and a halogen compound for forming an a-Si deposited film,
Linear silane compounds and I ₂ , B listed in Table 1 and Table 2
An a-Si film was deposited in the same manner as in Example 1 except that r ₂ and Cl ₂ were individually used in combination and the halogen gas flow rates were set as shown in Tables 1 and 2. The obtained a-
Evaluation results of the Si film evaluated in the same manner as in Example 1 are shown in Tables 1 and 2.

Comparative Examples 1 to 4 The linear silane compounds listed in Tables 1 and 2 were used as raw materials for forming the a-Si deposited film, and the support temperatures were set to Tables 1 and 2.
An a-Si film was deposited in the same manner as in Example 1 except that the settings were made as shown in 1 above and that no halogen compound was used. The obtained a-Si film was evaluated in the same manner as in Example 1. The evaluation results are shown in Tables 1 and 2. Example 1 above
12 to 12 and Comparative Examples 1 to 4 are summarized, the film formation rates correspond to the same a-Si deposited film forming raw materials as shown in the evaluation results of Tables 1 and 2. When the example and the comparative example were compared, when the halogen compound was mixed, the film forming rate was increased by about 2 to 4 as compared with the case where it was not mixed. In the case of accelerating the film formation rate by the type of halogen, Cl ₂ , Br ₂ and I ₂ are generally large in this order.

Further, the a-Si film formed in this example had good electrical characteristics.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an example of a deposited film forming apparatus used in the method of the present invention. 1: Deposition chamber 2: Support 3: Support stand 4: Heater 5: Conductor 6-1, 6-2, 6-3: Gas flow 9,10, 11, 12, 29: Gas supply source 13-1, 13-2, 13-3, 13-4, 18: Pressure meters 14-1, 14-2, 14-3, 14-4, 16-1, 16-2, 16-3, 16-4, 2
1: Valve 15-1, 15-2, 15-3, 15-4: Flow meter 17,17-1, 17-2, 17-3, 17-4: Gas inlet pipe 20: Gas exhaust pipe

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Masahiro Haruta 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Hiroshi Hirai 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Incorporated (72) Inventor Ken Eguchi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Takashi Nakagiri 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. ( 56) References JP-A-58-158646 (JP, A) Solid State Physics Vol. 15, No. 7 (1980. 7) pp. 435-439

Claims (1)

[Claims] 1. A linear silane compound represented by the general formula; Sin H ₂ n ₊₂ (n ≧ 1) and a halogen compound in a deposition chamber in which a support maintained at 150 ° C. to 300 ° C. is placed. A gaseous atmosphere is formed, and thermal energy is supplied into the deposition chamber without supplying electrical energy capable of generating plasma to excite the compound to form a deposited film containing silicon atoms on the support. A method for forming a deposited film, comprising: