JPH07193043A - Manufacturing apparatus of semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to prevent the occurrences of the excessive vacuum degree in a plasma chamber, the excessive increase of the energy of electrons, the increase of the temperature of ions and the high temperature of the wall surface of the plasma chamber. CONSTITUTION:Divergence-type plasma is generated with the microwave, which is introduced from a microwave-waveguide 1, and a main coil 5, which is provided at the peripheral part in a plasma chamber 2. A sample stage 4, on which a semiconductor substrate 7 is mounted, is provided in a reaction chamber 3. In the manufacturing apparatus for the semiconductor device having these chambers, a punching board 6, which hinders the flow of reaction gas, is provided at the connecting part of the plasma chamber 2 and the reaction chamber 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in the structure of a semiconductor device manufacturing apparatus used in a semiconductor device manufacturing process.

In a dry etching apparatus or a chemical vapor deposition apparatus using plasma used in a semiconductor device manufacturing process, it is possible to obtain a high density plasma in a high vacuum chamber, but the degree of vacuum is high. When the temperature becomes extremely high, the energy of the electrons increases too much, so the temperature of the ions rises and the temperature of the plasma chamber rises.

Under the above circumstances, it is possible to prevent the vacuum degree of the plasma chamber from becoming too high, the energy of electrons to increase too much, the temperature of the ions to rise, and the temperature of the wall surface of the plasma chamber to rise. There is a demand for a possible semiconductor device manufacturing apparatus.

[0004]

2. Description of the Related Art A conventional semiconductor device manufacturing apparatus will be described in detail with reference to FIG. A conventional semiconductor device manufacturing apparatus is shown in FIG.
As shown in FIG. 3, the reaction gas is introduced into the plasma chamber 22 through the reaction gas introduction pipe 22a, the microwave introduced through the microwave waveguide (hereinafter referred to as μ wave waveguide) 21 and the main coil provided around the microwave. A divergent plasma is generated by the plasma chamber 22
The surface of the semiconductor substrate 7 which is generated in the reaction chamber 23 adjacent to the plasma chamber 22 and mounted on the sample table 24 is dry-etched or a chemical vapor deposition film is formed on the surface.

The air inside is an exhaust pipe 23a provided in the reaction chamber 23.
The reaction chamber 23 and the plasma chamber 22 are both evacuated to a high vacuum, and the chamber pressures are almost equal.

[0006]

In the conventional semiconductor device manufacturing apparatus described above, the air inside the reaction chamber and the plasma chamber is exhausted from the exhaust pipe provided in the reaction chamber. Also has a high vacuum, and the processing accuracy is particularly high when highly efficient and good quality dry etching is performed on the surface of the semiconductor substrate in the reaction chamber or when a good quality chemical vapor deposition film is formed on the surface of the semiconductor substrate. In order to improve the pressure, a high vacuum of about 10 ^-4 Torr is required in the reaction chamber, but if the plasma chamber pressure becomes the same high vacuum as the reaction chamber pressure, high density plasma can be obtained in the high vacuum chamber. Although it is possible, if the vacuum degree becomes extremely high, the energy of the electrons will increase too much, so the temperature of the ions will rise, the temperature of the wall of the plasma chamber will rise, and the energy of the gas molecules will also rise, resulting in a fine processing. There was a problem that it would adversely affect the degree.

According to the present invention, it is possible to prevent the vacuum degree of the plasma chamber from becoming too high, the energy of electrons to increase too much, the temperature of the ions to rise, and the temperature of the wall surface of the plasma chamber to rise. It is an object of the present invention to provide a semiconductor device manufacturing apparatus capable of performing the above.

[0008]

A semiconductor device manufacturing apparatus according to the present invention includes a plasma chamber for generating a divergent plasma by a microwave introduced from a microwave waveguide and a main coil provided around the microwave chamber, and an object to be processed. In a manufacturing apparatus of a semiconductor device having a reaction chamber provided with a sample table for mounting a substrate, a punching board that blocks a flow of a reaction gas is provided at a connecting portion between the plasma chamber and the reaction chamber.

[0009]

That is, in the present invention, since the punching board is provided at the connecting portion between the plasma chamber and the reaction chamber, even if the air in the reaction chamber is exhausted to an extremely high vacuum, the resistance of the punching board causes the plasma chamber to separate from the plasma chamber. The difference in the degree of vacuum in the reaction chamber prevents the vacuum in the plasma chamber from becoming extremely high, causing the electron energy to increase too much, causing the temperature of the ions to rise and the wall temperature of the plasma chamber to rise. It becomes possible to do.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. 2 in the case where a polysilicon film of a semiconductor substrate 7 is etched by a semiconductor device manufacturing apparatus according to a first embodiment of the present invention with reference to FIG. The apparatus manufacturing apparatus will be described in detail.

FIG. 1 is a diagram showing a schematic structure of a semiconductor device manufacturing apparatus according to a first embodiment of the present invention, and FIG. 2 is a diagram showing a schematic structure of a semiconductor device manufacturing apparatus according to a second embodiment of the present invention. Is.

As shown in FIG. 1, the semiconductor device manufacturing apparatus according to the first embodiment of the present invention introduces a reaction gas, for example, chlorine gas, into the plasma chamber 2 from a reaction gas introduction pipe 2a,
A divergent plasma is generated in the plasma chamber 2 by the microwave introduced from the wave waveguide 1 and the main coil 5 provided around the microwave waveguide 1. The plasma is provided adjacent to the plasma chamber 2 via the punching board 6 made of quartz. The surface of the semiconductor substrate 7 mounted on the sample table 4 in the reaction chamber 3 is dry-etched,
A chemical vapor deposition film is formed on the surface.

This punching board 6 has a diameter of 8 mm on a quartz plate of 200 mm in diameter so that the transmission area ratio becomes 1/3.
It has 200 holes. The pressure in the reaction chamber 3 is
A high vacuum of about 10 ^-4 Torr is required to improve the processing accuracy, the air inside the reaction chamber 3 is exhausted from the exhaust pipe 3a provided in the reaction chamber 3, and the inside of the reaction chamber 3 is also inside the plasma chamber 2. Even if both are in a high vacuum, when the pressure in the plasma chamber 2 becomes such a high vacuum, the electron energy increases, the temperature of the ions increases, and the temperature of the wall surface of the plasma chamber 2 increases,
The energy of gas molecules also rises, which adversely affects the processing accuracy.

However, in the present invention, the plasma chamber 2
Since the punching board 6 is provided between the reaction chamber 3 and the reaction chamber 3 to block the flow of the reaction gas, even if the pressure in the reaction chamber 3 is set to 10 ⁻⁴ Torr, the pressure in the plasma chamber 2 is set to 10 ^-2 ~
It can be controlled to 10 ^-3 Torr, the temperature of the wall surface of the plasma chamber 2 can be lowered, the processing accuracy can be improved, and the temperature rise can be reduced. It is also possible to prevent the generation of particles that are generated.

The semiconductor device manufacturing apparatus of the second embodiment according to the present invention is almost the same as the semiconductor device manufacturing apparatus of the first embodiment as shown in FIG. 2, but is made of quartz as shown in the drawing. If the punching board 16 has a structure having a convex surface toward the reaction chamber 3, the plasma divergence region is expanded, and the in-plane distribution of the semiconductor substrate 7 can be controlled.

[0016]

As is apparent from the above description, according to the present invention, there is an advantage that it is possible to improve the state of plasma generation in the plasma chamber due to the extremely simple structure improvement, which is extremely economical and economical. It is possible to provide a semiconductor device manufacturing apparatus that can be expected to have the effect of improving reliability.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic structure of a semiconductor device manufacturing apparatus according to a first embodiment of the present invention,

FIG. 2 is a diagram showing a schematic structure of a semiconductor device manufacturing apparatus according to a second embodiment of the present invention,

FIG. 3 is a diagram showing a schematic structure of a conventional semiconductor device manufacturing apparatus;

[Explanation of symbols]

 1 is a μ wave waveguide, 2 is a plasma chamber, 2a is a reaction gas introduction pipe, 3 is a reaction chamber, 3a is an exhaust pipe, 4 is a sample stage, 5 is a main coil, 6 is a punching board, 7 is a semiconductor substrate,

Claims (2)

[Claims] 1. A microwave introduced from a microwave waveguide (1), a plasma chamber (2) for generating a divergent plasma by a main coil (5) provided around the microwave, and an object (7) to be treated. In a semiconductor device manufacturing apparatus comprising a reaction chamber (3) provided with a sample table (4) to be mounted, a flow of a reaction gas is obstructed at a connecting portion between the plasma chamber (2) and the reaction chamber (3). An apparatus for manufacturing a semiconductor device, comprising a punching board (6). 2. The punching board (6) is provided in the reaction chamber.
3. The semiconductor device manufacturing apparatus according to claim 1, which has a convex surface in the (3) direction.