JPH07187714A - Method for processing surface - Google Patents
Method for processing surfaceInfo
- Publication number
- JPH07187714A JPH07187714A JP33622993A JP33622993A JPH07187714A JP H07187714 A JPH07187714 A JP H07187714A JP 33622993 A JP33622993 A JP 33622993A JP 33622993 A JP33622993 A JP 33622993A JP H07187714 A JPH07187714 A JP H07187714A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon oxide
- oxygen
- base
- ozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、表面加工方法に関し、
例えば基板表面の親水性あるいは撥水性を高める際に必
要な突起状を基板表面に形成することが可能な表面加工
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface processing method,
For example, the present invention relates to a surface processing method capable of forming protrusions necessary for enhancing hydrophilicity or water repellency of a substrate surface on the substrate surface.
【０００２】[0002]
【従来の技術】従来、基板表面を突起状に加工する方法
として、サンドブラスト処理による機械的粗面加工、ま
たガラス表面などでは化学薬品を用いてエッチング処理
を行なうのが一般的であった。ガラス表面上の凹凸形成
方法として特開平４−１２４０４７号公報に、ガラス表
面に金属酸化膜を形成し、その表面をＡｒプラズマを利
用して凹凸を形成する方法が開示されている。2. Description of the Related Art Conventionally, as a method of processing the surface of a substrate into a projection, it has been general to mechanically roughen the surface by sandblasting, and to etch the glass surface with a chemical agent. As a method for forming unevenness on the glass surface, Japanese Patent Application Laid-Open No. 4-124047 discloses a method of forming a metal oxide film on the glass surface and forming unevenness on the surface by using Ar plasma.
【０００３】[0003]
【発明が解決しようとする課題】しかしながらこの方法
は、凹凸を微小にすることに限界があり、基板を外見的
に変化させてしまう。例えばガラス基板では、透過性を
低下させてしまう。またガラス基板表面の金属酸化膜を
Ａｒプラズマを利用して加工する方法は、加工に多大の
時間を要するという問題点があった。However, this method has a limit in making the unevenness minute, and changes the appearance of the substrate. For example, with a glass substrate, the transparency is reduced. Further, the method of processing the metal oxide film on the surface of the glass substrate using Ar plasma has a problem that it takes a lot of time for processing.
【０００４】本発明は、このような従来技術の問題点に
鑑み、基板の状態を外見的に変化させることなく、効率
的に基板表面に突起状を形成することができる表面加工
方法を提供することを目的とするものである。In view of the above problems of the prior art, the present invention provides a surface processing method capable of efficiently forming protrusions on the surface of a substrate without visually changing the state of the substrate. That is the purpose.
【０００５】[0005]
【課題を解決するための手段】本発明では、ガラス基板
またはシリコン酸化膜を堆積した基板を反応容器内に載
置し、基板を３００度以上に加熱し、オゾン、酸素及び
ＴＥＯＳを含むガスを反応容器内に供給し、基板上にシ
リコン酸化物を堆積するに際して、オゾンの酸素に対す
る濃度を５％以上とする。According to the present invention, a glass substrate or a substrate having a silicon oxide film deposited thereon is placed in a reaction vessel, the substrate is heated to 300 ° C. or higher, and a gas containing ozone, oxygen and TEOS is added. When the silicon oxide is supplied into the reaction vessel and silicon oxide is deposited on the substrate, the concentration of ozone with respect to oxygen is set to 5% or more.
【０００６】[0006]
【作用】本発明によれば、基板表面の親水性あるいは撥
水性を高める際に必要な突起状を基板表面に形成するこ
とが可能となる。すなわち、３００度以上に加熱された
ガラス基板、あるいは表面にシリコン酸化膜を堆積した
任意の材質の基板の表面に、オゾン、酸素およびＴＥＯ
Ｓを含むガスが供給されると、いわゆる常圧ＣＶＤ法に
よるシリコン酸化物が基板表面に形成されるが、オゾン
の酸素に対する濃度が５％以上であると、基板表面に不
均一に分布している吸着サイトによる反応の選択性が現
れる。つまり、吸着サイトにおけるシリコン酸化物堆積
速度が、吸着サイトでない部分の堆積速度に比べて著し
く大きくなる。したがって、基板表面にシリコン酸化物
による突起状が形成される。このようにして形成された
突起状は、加工時間を適当にすることにより、容易にそ
の高さを１μｍ以下にすることができる。したがって、
基板の状態を外見的に変化させることなく、基板上に突
起状を形成することができる。また、本発明では常圧Ｃ
ＶＤ法を利用しているため、生産性に優れた加工が可能
である。According to the present invention, it becomes possible to form on the surface of the substrate the protrusions necessary for enhancing the hydrophilicity or water repellency of the surface of the substrate. That is, ozone, oxygen, and TEO are formed on the surface of a glass substrate heated to 300 ° C. or higher, or a substrate of any material having a silicon oxide film deposited on the surface.
When a gas containing S is supplied, silicon oxide formed by the so-called atmospheric pressure CVD method is formed on the substrate surface, but if the concentration of ozone with respect to oxygen is 5% or more, it is unevenly distributed on the substrate surface. The selectivity of the reaction appears depending on the adsorption site. That is, the deposition rate of silicon oxide at the adsorption site is significantly higher than the deposition rate of the portion that is not the adsorption site. Therefore, protrusions of silicon oxide are formed on the surface of the substrate. The height of the protrusion thus formed can be easily reduced to 1 μm or less by adjusting the processing time. Therefore,
The protrusions can be formed on the substrate without changing the appearance of the substrate. Further, in the present invention, the atmospheric pressure C
Since the VD method is used, processing with excellent productivity is possible.
【０００７】以上に述べたように、本発明によれば、基
板の状態を外見的に変化させることなく、効率的に基板
表面に突起状を形成することができる表面加工方法を提
供することができる。As described above, according to the present invention, it is possible to provide a surface processing method capable of efficiently forming protrusions on the surface of a substrate without visually changing the state of the substrate. it can.
【０００８】[0008]
【実施例】図１は本発明の実施例で使用する常圧ＣＶＤ
装置の概要図を示したものである。図１において反応容
器１内にインジェクタ２が配置されている。反応ガス
は、ガス配管３からインジェクタ２へ供給され、インジ
ェクタ２に設けられたガス吹き出し穴４から反応容器１
内に供給される。反応容器１の下部をベルト５が適当な
速度で移動する構成となっている。ベルト５の下にはヒ
ーター６が設けられている。ベルト５上に基板７を載置
し、反応容器１内を通過させることにより、基板７上に
薄膜を堆積できる。反応ガスとしてはＴＥＯＳ、Ｏ3を
含むＯ2およびキャリヤＮ2を用いた。ＴＥＯＳはＮ2バ
ブリングにより発生させた。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an atmospheric pressure CVD used in an embodiment of the present invention
It is a schematic diagram of an apparatus. In FIG. 1, an injector 2 is arranged in a reaction container 1. The reaction gas is supplied to the injector 2 from the gas pipe 3, and the reaction vessel 1 is supplied from a gas blowing hole 4 provided in the injector 2.
Supplied within. The belt 5 moves under the reaction vessel 1 at an appropriate speed. A heater 6 is provided below the belt 5. A thin film can be deposited on the substrate 7 by placing the substrate 7 on the belt 5 and passing it through the reaction vessel 1. The reaction gas using O 2 and carrier N 2 containing TEOS, an O 3. TEOS was generated by N 2 bubbling.
【０００９】図２（ａ）〜（ｃ）は、本発明の第１の実
施例の工程模式図を示したものである。図２において、
ガラス基板８（図２（ａ））の表面に、図１で示した常
圧ＣＶＤ装置を用いてシリコン酸化物１０を堆積させ、
基板表面を突起状に加工した（図３（ｄ））。なお、図
３（ｃ）は、加工の途中の状態を示したものである。堆
積条件は、ＴＥＯＳバブリングＮ2流量１．７ＳＬＭ、
Ｏ3濃度５％（Ｏ3生成０2流量７．５ＳＬＭ）、キャリ
アＮ2流量１８ＳＬＭ、反応温度４１０度とした。以上
に述べたように、３００度以上に加熱されたガラス基
板、あるいは表面にシリコン酸化膜を堆積したガラス基
板の表面に、オゾン、酸素及びＴＥＯＳを含むガスが供
給されると、いわゆる常圧ＣＶＤ法によるシリコン酸化
物が基板表面に不均一に分布している吸着サイトによる
反応の選択性が現れる。つまり、吸着サイトにおけるシ
リコン酸化物堆積度が、吸着サイトでない部分の堆積速
度に比べておけるシリコン酸化物堆積速度が、吸着サイ
トでない部分の堆積速度に比べて著しく大きくなる。し
たがって、基板表面にシリコン酸化物による突起状が形
成される。FIGS. 2A to 2C are schematic process diagrams of the first embodiment of the present invention. In FIG.
Silicon oxide 10 is deposited on the surface of the glass substrate 8 (FIG. 2A) using the atmospheric pressure CVD apparatus shown in FIG.
The surface of the substrate was processed into a protrusion shape (FIG. 3 (d)). It should be noted that FIG. 3C shows a state in the middle of processing. The deposition conditions are TEOS bubbling N 2 flow rate 1.7 SLM,
The O 3 concentration was 5% (O 3 generation O 2 flow rate 7.5 SLM), the carrier N 2 flow rate was 18 SLM, and the reaction temperature was 410 ° C. As described above, when a gas containing ozone, oxygen and TEOS is supplied to the surface of a glass substrate heated to 300 ° C. or higher, or a glass substrate having a silicon oxide film deposited on the surface, so-called atmospheric pressure CVD is performed. The reaction selectivity appears due to the adsorption sites where the silicon oxide is unevenly distributed on the substrate surface by the method. That is, the deposition rate of silicon oxide at the adsorption site is significantly higher than the deposition rate of the portion that is not the adsorption site, as compared with the deposition rate of the portion that is not the adsorption site. Therefore, protrusions of silicon oxide are formed on the surface of the substrate.
【００１０】本発明の応用として、本発明によって加工
した基板の表面に撥水撥油性のある試液をコーティング
すると、水及び油の接触各が約１５０度となることがわ
かった。As an application of the present invention, it was found that when the surface of the substrate processed according to the present invention was coated with a water- and oil-repellent reagent solution, each contact between water and oil was about 150 degrees.
【００１１】本発明の第２の実施例では、シリコン酸化
膜を堆積した基板の材質のガラスとしたが、基板がフイ
ルム、プラスチック等の樹脂及びアルミ、鉄等の金属と
しても同様の効果が得られた。In the second embodiment of the present invention, the material of the substrate on which the silicon oxide film is deposited is glass, but the same effect can be obtained even if the substrate is a resin such as film or plastic and a metal such as aluminum or iron. Was given.
【００１２】[0012]
【発明の効果】以上に述べたように、本発明によれば、
基板の状態を外見的に変化させることなく、効率的に基
板表面に突起状を形成することができる。また、突起状
を利用することで親水あるいは撥水表面等に応用するこ
とができる。As described above, according to the present invention,
It is possible to efficiently form protrusions on the surface of the substrate without visually changing the state of the substrate. Further, by utilizing the projection shape, it can be applied to a hydrophilic or water repellent surface.
【図１】本発明の各実施例で使用した常圧ＣＶＤ装置の
概要図FIG. 1 is a schematic diagram of an atmospheric pressure CVD apparatus used in each example of the present invention.
【図２】本発明の第１の実施例である表面加工方法の工
程模式図FIG. 2 is a process schematic diagram of the surface processing method according to the first embodiment of the present invention.
【図３】本発明の第２の実施例である表面加工方法の工
程模式図FIG. 3 is a process schematic diagram of a surface processing method according to a second embodiment of the present invention.
１ 反応容器 ２ インジェクタ ３ ガス配管 ４ ガス吹き出し穴 ５ ベルト ６ ヒーター ７ 基板 ８ ガラス基板 ９ シリコン酸化膜 １０ シリコン酸化物 1 Reaction Container 2 Injector 3 Gas Pipe 4 Gas Blowout Hole 5 Belt 6 Heater 7 Substrate 8 Glass Substrate 9 Silicon Oxide Film 10 Silicon Oxide
Claims (3)
ガラス基板を３００度以上に加熱し、オゾン、酸素及び
ＴＥＯＳを含むガスを前記反応容器内に供給することに
より、前記ガラス基板上にシリコン酸化物を堆積する表
面加工方法であって、オゾンの酸素に対する濃度が５％
以上であることを特徴とする表面加工方法。1. A glass substrate is placed in a reaction container, the glass substrate is heated to 300 ° C. or higher, and a gas containing ozone, oxygen, and TEOS is supplied into the reaction container to obtain a glass substrate on the glass substrate. A surface treatment method for depositing silicon oxide on the surface of ozone, in which the concentration of ozone in oxygen is 5%.
The surface processing method characterized by the above.
器内に載置し、前記基板を３００度以上に加熱し、オゾ
ン、酸素及びＴＥＯＳを含むガスを前記反応容器内に供
給することにより、前記ガラス基板上にシリコン酸化物
を堆積する表面加工方法であって、オゾンの酸素に対す
る濃度が５％以上であることを特徴とする表面加工方
法。2. A substrate on which a silicon oxide film is deposited is placed in a reaction container, the substrate is heated to 300 ° C. or higher, and a gas containing ozone, oxygen and TEOS is supplied into the reaction container. A surface processing method for depositing silicon oxide on the glass substrate, wherein the concentration of ozone with respect to oxygen is 5% or more.
求項２記載の表面加工方法。3. The surface processing method according to claim 2, wherein the substrate is glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33622993A JPH07187714A (en) | 1993-12-28 | 1993-12-28 | Method for processing surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33622993A JPH07187714A (en) | 1993-12-28 | 1993-12-28 | Method for processing surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07187714A true JPH07187714A (en) | 1995-07-25 |
Family
ID=18296981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33622993A Pending JPH07187714A (en) | 1993-12-28 | 1993-12-28 | Method for processing surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07187714A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999023042A1 (en) * | 1997-11-04 | 1999-05-14 | Pilkington Plc | Improvements in coating glass |
-
1993
- 1993-12-28 JP JP33622993A patent/JPH07187714A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999023042A1 (en) * | 1997-11-04 | 1999-05-14 | Pilkington Plc | Improvements in coating glass |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100257302B1 (en) | Film growth method | |
| JP2001230248A (en) | Method for manufacturing semiconductor device and apparatus therefor | |
| KR20010110531A (en) | Method of forming a thin film using atomic layer deposition | |
| KR970706960A (en) | (Glass Coating Method and Glass Coated Thereby) | |
| CN101154589A (en) | Film formation method and apparatus for forming silicon oxide film | |
| US5250473A (en) | Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pressure (LPCVD) | |
| KR100326488B1 (en) | Plasma Chemical Vapor Deposition | |
| US7304002B2 (en) | Method of oxidizing member to be treated | |
| CN104451599A (en) | Method of manufacturing a silicon oxide film | |
| JPH04233734A (en) | Fluorization silicon nitride adhesion method | |
| JPH07187714A (en) | Method for processing surface | |
| JPS61128520A (en) | Diffusing method of impurity | |
| JPS59219464A (en) | Vapor phase chemical reaction method | |
| US5897711A (en) | Method and apparatus for improving refractive index of dielectric films | |
| US5286523A (en) | Method of processing substrates and substrate processing apparatus | |
| JP2007273557A (en) | Method of forming insulating layer | |
| KR100302584B1 (en) | Method for manufacturing tantalum oxide film | |
| JPH06244426A (en) | Production of glass board for thin film formation | |
| JPH11319708A (en) | Production of chemical adsorption membrane | |
| KR100478744B1 (en) | suscetpor and manufacturing method the same | |
| KR200419811Y1 (en) | Substrate processing apparatus | |
| JPH05121337A (en) | Method for gas reaction on solid surface | |
| JPH0539628Y2 (en) | ||
| JPH02502549A (en) | Vapor deposition method | |
| JPH0831816A (en) | Method and device for forming film by using organic silicon source and production of semiconductor device |