JPH07176675A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To form a joint of solder material in a resin sealed body while preventing insufficient joint, swelling of resin sealed body or cracking after reflow soldering work. CONSTITUTION:A hybrid IC 36 comprises an inner board and a body 34 for resin sealing the entirety wherein a passive element 26 is connected electrically and mechanically to the inner board at a soldering part 27 in the resin sealed body 34. The outer lead 19b of the hybrid IC 36 is connected with a printed wiring board 60 at a reflow soldering part 63. An inner soldering part 27 is formed of a solder material having a melting point higher than that of solder material at the reflow soldering part 63. At the time of reflow soldering of the outer lead 19b to the printed wiring board 60, the high melting point soldering part 27 in the resin sealed body 34 is not fused and thereby the joint 27 is not open-circuited nor short-circuited. Furthermore, since the solder material is not fused in the resin sealed body, the resin sealed body 34 is not swollen nor cracked.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a technique for an electric connection portion sealed in a non-hermetically sealed body, for example, a hybrid integrated circuit device (hereinafter referred to as hybrid I).
Called C. ) Related to effective technology.

[0002]

2. Description of the Related Art As an example which describes a general method for producing a hybrid IC, Japanese Patent Office JP-A-2-
There is 68871. That is, this hybrid IC
In the manufacturing method (1), first, electronic components such as active elements and passive elements are mounted on the wiring board, and electrically and mechanically connected by soldering. Then, the outer lead attachment portion is inserted into a land formed in the peripheral portion of the wiring board, and the land and the attachment portion are soldered to electrically and mechanically connect the outer lead to the wiring board.

Also, "Nikkei Electronics Volume 480," issued by Nikkei McGraw-Hill, Inc., issued August 21, 1989.
P177 to P188 describe a hybrid IC in which a lead frame is used in order to achieve productivity and high density, and the entire part except the outer leads is resin-sealed with a resin sealing body. Among them, a hybrid IC in which passive components are connected to a wiring board by using a conductive adhesive such as silver paste has extremely good productivity.

As an example in which an electrical connection method for electronic components is described, the RCJ 2nd Electronic Device Symposium held in November 1992, "SMD Hybrid IC
Credibility.

[0005]

However, the hybrid IC in which the passive elements are connected by the conductive adhesive has the following problems. When the solder plating film is deposited on the terminal portion of the passive component, the compatibility between the solder plating film and the silver paste is not good, and the connection strength becomes insufficient. When small electronic parts are connected by a conductive adhesive such as silver paste, the terminal spacing becomes extremely narrow, so the electrical connection by the conductive adhesive due to the viscosity of the conductive adhesive and expansion during curing. Short circuit occurs.

Therefore, if the passive component is connected by a solder material instead of the conductive adhesive, such a problem can be avoided. However, the present inventor has clarified that the following problems occur this time.
When the hybrid IC in which the passive components are connected by the solder material is electrically connected to the printed wiring board, the reflow soldering process is performed. The working temperature of this reflow soldering process is about 230 ° C. Therefore, the electrical connection portion connecting the passive components with the solder material is also in a molten state. As a result, an open defect or a short circuit defect occurs in the electrical connection portion of the passive element. Further, when the solder material melts inside the resin encapsulant, the resin encapsulant expands or cracks.

This problem will be described in more detail with reference to FIG. First, FIG. 12A shows a case where the hybrid IC 80 including the pin insertion type outer leads is entirely resin-sealed by the resin sealing body 81 except the outer leads 82. When the hybrid IC 80 is mounted on the printed wiring board 84, the outer leads 82 are inserted into the through holes 85 formed in the printed wiring board 84 so that the resin sealing body 81 is floated above the printed wiring board 84. , Flow soldered. Therefore, since the inside of the resin sealing body 81 is hardly heated, the solder connection portion 83 inside the resin sealing body 81 does not melt.

In FIG. 12 (b), a hybrid IC 90 having surface mount type outer leads is shown as an outer lead 92.
It shows a case where the entire body except for is resin-sealed by the resin sealing body 91. When the hybrid IC 90 is mounted on the printed wiring board 94, the outer leads 92 are brought into contact with the lands 95 formed on the printed wiring board 94 so that the resin sealing body 91 is brought close to the printed wiring board 94. Then, the reflow soldering process is performed.
In this state, the resin encapsulant 91 has the outer lead 9
Since it is heated in the same manner as 2 and the land 95, the internal temperature of the resin sealing body 91 reaches near the working temperature of the reflow soldering process. As a result, the solder connection portion 93 in the resin sealing body 91 is melted. Then, the resin sealing body 9
When the solder connection portion 93 melts inside 1, the volume expands and internal stress is generated due to the expansion, so that the resin sealing body 91 swells or cracks. Further, when the molten solder material moves inside the resin sealing body 91, an open defect or a short circuit defect of the solder connection portion 93 occurs.

An object of the present invention is to properly form a connecting portion of an electronic component with a solder material while preventing open defects and short circuit defects after the reflow soldering work and swelling and cracking of the non-hermetically sealed body. An object of the present invention is to provide a semiconductor device that can be manufactured.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0011]

The typical ones of the inventions disclosed in the present application will be outlined below.

That is, it is provided with a connecting portion which is sealed by a non-hermetically sealed body and is formed of a solder material, and an outer lead which is projected from the non-hermetically sealed body and is connected to the outside by a solder material. In the existing semiconductor device,
The connection portion inside the non-hermetically sealed body is formed of a solder material having a melting point higher than that of a solder material used for solder connection with the outside of the outer lead.

[0013]

According to the above-mentioned means, when the outer leads are reflow soldered to the printed wiring board,
Since the connection part in the non-hermetically sealed body does not melt, an open defect or a short circuit defect does not occur in the connection part. Further, since the solder material does not melt inside the non-hermetically sealed body, the non-hermetically sealed body does not swell or crack.

[0014]

1 is a front sectional view showing a hybrid IC according to an embodiment of the present invention. FIG. 2 and subsequent drawings are explanatory views showing each step in the manufacturing method.

In this embodiment, the semiconductor device according to the present invention is constructed as a hybrid IC. This hybrid IC has a quad flat package (hereinafter referred to as QFP). The QFP includes a resin sealing body as a non-airtight sealing body and an outer lead formed in a so-called gull wing shape. The hybrid IC is manufactured by the manufacturing method described below.

A method of manufacturing a hybrid IC which is an embodiment of the present invention will be described below. This description will also clarify the details of the construction of the hybrid IC.

In the present embodiment, the method of manufacturing the hybrid IC includes the multiple lead frame 1 shown in FIG.
1 is used, and the multiple lead frame 11 is manufactured and prepared by a multiple lead frame molding process. The multiple lead frame 11 is made of a thin plate made of a spring material having a relatively large mechanical strength such as iron-nickel alloy or phosphor bronze, and is integrally formed by an appropriate means such as punching press work or etching work. It is molded. A plating process using silver (Ag) or the like is partially or entirely applied to the surface of the multiple lead frame 11 so as to appropriately perform the wire bonding described later (not shown). A plurality of unit lead frames 12 are arranged side by side in a row in the multiple lead frame 11. However, illustration and description are given only for one unit in which continuity can be understood.

The unit lead frame 12 has a positioning hole 13
There is provided a pair of outer frames 13 in which a is provided, and both outer frames 13 are arranged in parallel at a predetermined interval and extend in series. Adjacent unit lead frame 1
A pair of section frames 14 are provided between the outer frame 13 and the outer frame 13,
The unit lead frames 12 are arranged in parallel with each other between the 13 and are integrally installed. The unit lead frame 12 is formed in a substantially square frame body (frame) formed by the outer frame and the section frame.

In the unit lead frame 12, the outer frame 1
3 and the section frame 14 are connected to each other by the dam suspension member 1
5 are arranged in a substantially right-angled direction and are integrally projected, and four dam members 16 are arranged in the dam suspension member 15 so as to have a substantially square frame shape and are integrally suspended. Has been done.

Each of the dam members 16 on the side of the section frame 14 has a tab suspension lead 17 arranged at one end thereof.
The tabs 18 are integrally provided so as to be opposed to each other in the direction of 5 degrees, and each tab suspension lead 17 has a tab 18 formed in a substantially square frame plate shape substantially concentrically with the frame shape of the dam member 16 group. , And are integrally connected so as to be suspended by these tab suspension leads 17. The size of the tab 18 is set to a size capable of supporting a wiring board described later.

Each tab suspension lead 17 is bent near the tab 18, and the tab suspension lead 17 is bent.
Due to the bending, the tab 18 is lowered from the surface of the lead group described later by the thickness of the internal substrate described later (so-called tab lowering).

Further, a plurality of leads 19 as electric wiring are arranged on the dam member 16 at equal intervals in the longitudinal direction, and are integrally projected so as to be parallel to each other and orthogonal to the dam member 16. . The inner end of each lead 19 has a tab 1 at the tip.
The inner portions (hereinafter, referred to as inner leads) 19a are respectively arranged by surrounding 8. On the other hand, the outer extension of each lead 19 has its tip connected to the outer frame 13 and the section frame 14,
Each outer portion (hereinafter, referred to as outer lead) 19b is configured. The portion between the adjacent leads 19 of the dam member 16 substantially constitutes a dam 16a that blocks the flow of the resin during the later-described package molding.

In this embodiment, the hybrid IC manufacturing method uses the internal substrate 20 shown in FIG. 3, and the internal substrate 20 is manufactured and prepared by the internal substrate molding process. The internal substrate 20 has a main body 21, which is made of a ceramic substrate having an insulating property and is formed in a square plate shape having a size corresponding to the tab 18 described above. Internal board body 2
The ceramic substrate forming No. 1 is formed so that defects such as deformation and damage do not occur due to the working temperature of the reflow soldering process described later. As a material for forming such a ceramic substrate, for example, alumina, aluminum nitride, or silicon carbide can be used.

Of the pair of main surfaces (hereinafter referred to as the upper surface and the lower surface) 21a, 21b of the main body 21 of the internal substrate 20, a plurality of wire bonding portions 22 are arranged on the upper surface 21a, and the wire bonding portions 22 are arranged on the outer peripheral portion thereof. The wire bonding portions 22 are arranged so as to correspond to the inner leads 19a described above by using the lithography processing method and the etching processing method using a material having conductivity. In addition, the lower surface 2 of the internal board body 21
A lead frame fixing portion 23 is formed on the outer periphery of 1b in the same manner as the frame shape, and the lead frame fixing portion 23 is formed so as to correspond to the tab 18 described above. The shape and forming method of the lead frame fixing portion 23 are not limited, and the point is that the lead frame is fixed to the tab 18 so that the lead frame can be fixed.

A plurality of lands 24 for passive elements and 25 lands for active elements are provided on the upper surface 21a and the lower surface 21b of the internal substrate body 21 and are arranged so as to correspond to the passive elements and active elements to be mounted, respectively. Then, it is formed by a lithography processing method and an etching processing method using a conductive material such as copper. Further, electric wirings (not shown) are formed on the upper surface 21a and the lower surface 21b of the inner substrate body 21 by a lithographic processing method and an etching processing method using a conductive material such as copper. This electric wiring may be provided with a through hole penetrating the main body 21 or a laminated wiring formed inside the main body 21. And each land 2
Reference numerals 4 and 25 are appropriately electrically connected to the wire bonding portion 22 by this electric wiring.

As shown in FIG. 4, the passive element 26 is formed on each of the passive element lands 24 on the internal substrate 20 having the above-described structure, and the high melting point solder material is used in the passive element solder connecting step. Be soldered to. As the passive element 26 used in the hybrid IC, there are various kinds of electronic components such as a chip capacitor, a chip resistor, and an inductor. For convenience, the passive element 26 will be described. The high-melting-point solder material used for soldering the passive element 26 is a solder material having a melting point higher than that of the solder material used for solder connection with the outside of the outer lead, which will be described later. Two
A solder material having a melting point of 35 ° C. has been used. Examples of the solder material having a high melting point include a tin (Sn) -lead eutectic solder material having a high lead (Pb) ratio and a tin-antimony (Sb) solder material.

Table 1 below shows examples of solder materials. In Table 1, the type symbol is a symbol indicating the type of solder material used in Japanese Industrial Standards. In this embodiment, H95Sb5A in Table 1 is used as the high melting point solder material. The melting point (solidus temperature) of this high melting point solder material is about 235 ° C., but the working temperature is set to 280 ° C.

[0028]

The soldering method using the high melting point solder material can be carried out as follows in the same manner as the ordinary soldering method. In advance, a paste-like high melting point solder material (not shown) is applied to the passive element lands 24 by an appropriate means such as a screen printing method. After that, predetermined passive elements 26 are mounted on the respective passive element lands 24 and adhered by the adhesive force of the high melting point solder material itself. Then, the internal substrate 2 on which the passive elements 26 are mounted
0 is heated by a suitable heating means such as a heating furnace to about 280 ° C. which is a working temperature of the melting point of the high melting point solder material in this embodiment of about 235 ° C. or higher. By this heating, the high melting point solder material is melted, and after cooling, the solder connection portion 27 made of the high melting point solder material is formed between the terminal portion 26a of the passive element 26 and the land 24.

When the passive element 26 is soldered to the land 24 for the passive element by using a high melting point solder material, as shown in FIG.
, The passive element 26 is electrically and mechanically connected to the passive element land 24 by a solder connection portion 27 (hereinafter referred to as a high melting point soldering portion) made of a high melting point solder material. It becomes a state. Since the high melting point soldering portion 27 is formed by soldering,
Even if the distance between the terminals 26a, 26a of the passive element 26 is small, a short circuit failure due to a bridge phenomenon or the like does not occur. Further, when a solder plating film (not shown) is applied to the surface of the terminal portion 26a of the passive element 26, the connection strength of the high melting point soldering portion 27 becomes extremely high. By the way, when the terminal portion 26a coated with the solder plating film is connected by the conductive adhesive, the connection strength becomes low because the compatibility between the solder plating film and the conductive adhesive is poor.

After the passive element 26 is electrically and mechanically connected to the passive element land 24 by the high melting point soldering portion 27 as described above, the internal substrate 20 is attached to the internal substrate 20, as shown in FIG. The active element 28 is fixed to each active element land 25 by using a silver paste as a conductive adhesive. As the active element 28 used in the hybrid IC, there are a semiconductor integrated circuit device (IC, LSI) and a transistor array forming a memory, a logic, etc., but for the sake of convenience, a pellet of the semiconductor integrated circuit device (hereinafter, referred to as a pellet). .) Will be described as an example. The pellet 28 is formed in a flat plate shape having a substantially square shape in plan view, and the active element land 25 is formed slightly larger than the size of the pellet 28 in plan view.

The silver paste is a conductive adhesive composed of an epoxy resin adhesive, a curing accelerator, and a solvent mixed with silver powder. This fixing method using silver paste is carried out as follows. First, a silver paste (not shown) is applied to each active element land 25 by an appropriate means such as a method using a dispenser. After that, a predetermined pellet 28 is mounted on each active element land 25 and adhered by the adhesive force of the silver paste itself. Next, the internal substrate 20 on which the group of active elements 28 is mounted is heated to about 180 ° C., which is higher than the curing temperature of the silver paste, by a suitable heating means such as a heating furnace. This heating cures the silver paste, and after curing, a pellet bonding portion 29 made of silver paste is formed between the active element 28 and the land 25.

When the pellet 28 is bonded to the active element land 25 by using silver paste, the pellet 28 is electrically and mechanically connected to the active element land 25 by the pellet bonding portion 29 made of silver paste. Will be in a state of This pellet bonding part 2
The curing temperature of the silver paste (about 180 ° C.) when forming No. 9 is the melting point of the high melting point solder material (about 235 ° C.)
Therefore, the high melting point soldering portion 27 does not melt when the pellet bonding portion 29 is formed. Therefore, the passive element 26 fixed to the passive element land 24 does not move when the pellet bonding portion 29 is formed.

The active element land 2 of the pellet 28 is used.
The fixing means to 5 is not limited to using a conductive adhesive such as silver paste, but a pellet bonding method using a gold-silicon eutectic layer or the like can be used. In this case, the gold-silicon eutectic layer causes the pellet bonding portion to have extremely high heat resistance, so that it is possible to reliably prevent melting during the reflow soldering process.

As described above, the passive element 26 is electrically and mechanically connected to the passive element land 24 by the high melting point soldering portion 27, and the pellet 28 as the active element is silver on the active element land 25. After being electrically and mechanically connected by the pellet bonding portion 29 made of paste, the tab 18 of the unit lead frame 12 in the multiple lead frame 11 is attached to the internal substrate 20 as shown in FIG. 6A. However, it is fixed by using a silver paste as an adhesive material. This fixing method using silver paste is carried out as follows. The adhesive is not limited to the silver paste, and other adhesives can be used.

First, a silver paste (not shown) is applied to the lead frame fixing portion 23 or the tab 18 of the internal substrate 20 by an appropriate means such as a method using a dispenser. After that, the lead frame fixing portion 23 of the internal substrate 20 and the tab 18 of the unit lead frame 12 are aligned and adhered by the adhesive force of the silver paste itself. Next, the multiple lead frame 11 in which the inner substrate 20 is assembled to each unit lead frame 12 is heated to about 180 ° C. which is a temperature higher than the curing temperature of the silver paste by an appropriate heating means such as a heating furnace. This heating cures the silver paste, and after curing, the lead frame bonding portion 30 made of silver paste is formed between the internal substrate 20 and the tab 18.

Cure temperature of the silver paste when the lead frame bonding portion 30 is formed (about 180 ° C.)
Is lower than the melting point of the high melting point solder material (about 235 ° C.), the high melting point soldering portion 27 does not melt when forming the lead frame bonding portion 30. Therefore, the passive element 26 fixed to the passive element land 24 is connected to the lead frame bonding portion 30.
It does not move when it is formed.

In the wire bonding process, the multiple lead frame 11 in which the internal substrate 20 is assembled to each unit lead frame 12 as described above is
The wire bonding operation is performed as shown in FIG. 6 (b). This wire bonding work is performed by feeding the multiple lead frames in the lateral pitch.
This is sequentially performed for each unit lead frame. In this embodiment, pellets 28 are formed on the upper and lower surfaces of the internal substrate 20.
Since they are bonded to each other, it is necessary to avoid interference with the pellet on the opposite main surface when performing this wire bonding operation. For example, the internal substrate 20
The upper surface 21a of the pellet 28 and the lower surface 21b of the pellet 2
It is desirable that 8 are arranged so as not to overlap each other in a plan view.

In this embodiment, two types of wire bonding work are carried out. One is a wire bonding operation for each pellet 28 as an active element. That is, the bonding pad (not shown) of the pellet 28 bonded on the active element land 25 of the internal substrate 20 and the active element land 25.
The bonding wire 31 is bonded to the wire bonding part 25a in the above-mentioned step by using an appropriate wire bonding device (not shown) such as an ultrasonic thermocompression-bonding wire bonding device so that both ends thereof are bonded to each other. Entangled. As a result, the integrated circuit built in the pellet 28 is formed on the outer peripheral portion of the internal substrate 20 via the bonding pad, the bonding wire 31, and the electric wiring (not shown) wired to the internal substrate 20. It will be electrically drawn out to the wire bonding portion 22.

The other is a wire bonding operation for electrically connecting the internal substrate 20 and the unit lead frame 12. That is, a lead bonding wire 32 is provided between each inner lead 19a in the unit lead frame 12 and each wire bonding portion 22 of the internal substrate 20 by a suitable wire bonding device such as an ultrasonic thermocompression bonding wire bonding device (see FIG. (Not shown) is used to bond and bridge both ends of each. The group of passive elements 24 and the group of pellets 25 electrically connected to the internal substrate 20 include an electrical wiring (not shown) wired on the internal substrate 20, and a wire bonding portion 22 formed on the outer peripheral portion of the internal substrate 20. , And is electrically led out through the lead bonding wire 32 and the outer lead 19b.

In this way, the internal substrate 20, the passive element 2
4, the pellet 28 and the multiple lead frame 11 are assembled into the assembly 33, and a resin sealing body 34 as a non-airtight sealing body is provided for each unit lead frame as shown in FIG. The molding apparatus 40 is used to mold each unit lead frame simultaneously.

The transfer molding apparatus 40 shown in FIG. 7 includes a pair of upper and lower dies 41 and 42 which are clamped to each other by a cylinder device or the like (not shown).
On the mating surface of the upper mold 41 and the lower mold 42, a plurality of sets of upper mold cavity recesses 43a and lower mold cavity recesses 43b are formed so as to cooperate with each other to form the cavities 43.

A pot 44 is opened on the mating surface of the upper mold 41, and a cylinder device (not shown) is provided in the pot 44.
A plunger 45 that is advanced and retracted by is inserted so that a resin (hereinafter, referred to as a resin) as a molding material can be fed.

On the mating surface of the lower mold 42, a cull 46 is arranged at a position facing the pot 44 and is sunk.
A plurality of runners 47 are radially arranged so as to be respectively connected to the pots 44 and are recessed. The other end of each runner 47 is connected to the lower cavity recess 43b, and a gate 48 is formed at that connection so that the resin can be injected into the cavity 43. In addition, the multiple lead frame 11 is provided so that an escape recess 49 can escape the thickness of the lead frame on the mating surface of the lower mold 42.
It has a rectangular shape slightly larger than the outer shape, and is submerged at a constant depth of a size approximately equal to its thickness.

When the resin encapsulant 34 is transfer-molded by using the assembly 33 having the above structure, the upper die 4
1 and the lower mold 42, each cavity 43 is a pair of dams 16a, 16a in each unit lead frame 12.
Corresponding to each space between. Therefore, the resin encapsulant 34 encloses the inner space surrounded by the four dam members 16 in the unit lead frame 12.

At the time of transfer molding, in the assembly 33 having the above-mentioned structure, the multiple lead frame 11 has the lower die 4
2 is housed in a recessed recess 49 that is recessed in 2, and the inner substrate 20 of each unit lead frame 12 is arranged and set so as to be housed in each cavity 43. At this time, in this embodiment, the internal substrate 20
Is positioned substantially at the center of the cavity 43 in the vertical direction.

Subsequently, the upper mold 41 and the lower mold 42 are clamped, and the resin 50 is moved from the pot 44 by the plunger 45 through the runner 47 and the gate 48 into each cavity 4.
3 is delivered and injected.

After the injection, when the resin is thermoset, the resin sealing body 34 is molded. When the resin sealing body 34 is molded, the upper mold 41 and the lower mold 42 are opened, and
The resin sealing body 34 is released from the mold by ejector pins (not shown). In this way, as shown in FIG. 8, the molded body 35 in which the resin sealing body 34 is molded is removed from the transfer molding device 40. Then, inside the resin sealing body 34 resin-molded in this way, the internal substrate 2
0, passive element 24, pellet 28, inner lead 19a
And the bonding wires 31 and 32 are resin-sealed.

Although not shown, the molded body 35 as a semi-finished product in which the resin sealing body 34 is molded, the outer frame 13 and the dam 16a are sequentially cut off for each unit lead frame in the lead cutting molding process. Each outer lead 19b is bent and formed in a gull wing shape.

The hybrid IC 36 manufactured as described above is mounted on a printed wiring board as shown in FIG. 1 by the following reflow soldering process.

The printed wiring board 60 has a main body 61, and the main body 61 is formed of a glass epoxy substrate in which glass fibers are impregnated with an epoxy resin, and is formed into a plate shape having a desired size. Printed wiring board body 61
The glass epoxy substrate for forming is formed so that defects such as deformation and damage do not occur due to the working temperature of the reflow soldering process.

The land 6 is formed on one main surface (hereinafter referred to as the upper surface) 61a of the main body 61 of the printed wiring board 60.
2 are arranged so as to correspond to the outer lead 19b group of the hybrid IC 36 to be mounted, and are formed by a screen printing method, a lithography processing method, and an etching processing method using a conductive material such as copper. Has been done. Further, electric wiring (not shown) is formed on the upper surface 61a of the printed wiring board body 61 by a screen printing method, a lithography processing method, and an etching processing method using a conductive material such as copper. This electric wiring may be provided with a through hole penetrating the main body 61 or a laminated wiring formed inside the main body 61. Then, the respective lands 62 are appropriately electrically connected by this electric wiring.

The printed wiring board 60 thus constructed has the hybrid I manufactured as described above.
C36 is reflow soldered using a solder material with a normal melting point. Hybrid IC36
The solder materials used in the reflow soldering process are
It is a solder material having a melting point lower than about 235 ° C., which is the melting point of the high melting point solder material in which the passive element 26 is soldered to the internal substrate 20, and a solder material having a melting point of about 183 ° C. is used. As a solder material having such a melting point, tin-
Lead eutectic solder materials are available. In this embodiment, the solder material of H95 or H63 which is a versatile solder material in Table 1 is used. The melting point of these solder materials is about 183 ° C., but the working temperature is
About 235 ° C is set.

The reflow soldering method of the hybrid IC 36 to the printed wiring board 60 can be carried out as follows in the same manner as the normal reflow soldering method. A paste solder material (not shown) is previously applied to the lands 62 of the printed wiring board 60 by an appropriate means such as a screen printing method. After that, the hybrid IC 36 is mounted on the printed wiring board 60 with each outer lead 19b aligned with each land 62, and adhered by the adhesive force of the solder material itself. Then, the working temperature (about 235 ° C.) at which the printed wiring board 60 on which the hybrid IC 36 is mounted is higher than the melting point (about 183 ° C.) of the solder material applied to the lands 62 by an appropriate heating means such as a heating furnace. To be heated. This heating melts the solder material, and after cooling, the hybrid IC3
A reflow soldering portion 63 made of a solder material is formed between the outer lead 19 b of No. 6 and the land 62. This reflow soldering section 63 allows the hybrid IC
36 is in a state of being electrically and mechanically connected to the land 62.

In carrying out the reflow soldering method of the hybrid IC 36 to the printed wiring board 60, the high melting point soldering portion 27 as an electric connection portion of the passive element 26 in the hybrid IC 36 is operated at the working temperature of the reflow soldering method. Since the high melting point solder material having a melting point (about 235 ° C.) or higher (about 235 ° C.) is used, it does not melt.

If the soldering portion 27 as a solder connecting portion inside the hybrid IC 36 melts, the volume may expand by, for example, about 10%, and an internal stress of, for example, 30 Kg / mm ² may act.
Therefore, when the internal stress exceeds the proof stress of the resin sealing body 34, for example, 15 Kg / mm ² , the resin sealing body 34 may be swollen or cracked. However, in this embodiment, the high melting point soldering portion 27 as a solder connecting portion inside the hybrid IC 36 is used.
Does not melt, so that the resin encapsulant 34 does not necessarily swell or crack.

FIG. 9 is a partially omitted perspective view showing an example of mounting the hybrid IC according to this embodiment on a mother board of a mobile telephone.

In this mounting example, the hybrid IC3
6 is configured as a high frequency amplifier module used in a mobile telephone. Since the mother board 60A corresponding to the printed wiring board 60 according to the embodiment shown in FIG. 1 is configured substantially the same as the printed wiring board 60 shown in FIG. 1, its detailed description will be omitted. The description is omitted. The hybrid IC 36 manufactured as described above is soldered to the mother board 60A using a solder material having a normal melting point, as in the case described with reference to FIG. Further, the reflow soldering method of the hybrid IC 36 to the mother board 60A is carried out by the normal reflow soldering method as described with reference to FIG.

In the method of reflow soldering the hybrid IC 36 to the mother board 60A, in addition to the hybrid IC 36 which is the high frequency amplification module according to the present embodiment, the mother board 60A has an IC 64 having a central processing unit (CPU) circuit built therein. , Various types of passive elements 26A such as chip capacitors, chip resistors, and inductors are mounted and subjected to reflow soldering processing. The point that the hybrid IC 36 can be collectively subjected to the reflow soldering process together with these mounted parts is a remarkable action and effect in this embodiment.

That is, when the hybrid ICs 36 are collectively reflow-soldered together with these components mounted on the mother board 60A, the melting point is about 183.
A highly versatile solder material having a temperature of ℃ is used, and a working temperature (about 235
(° C). When performing the reflow soldering method for this mother board 60A, the Hybrid I
The high melting point soldering portion 27 as an electrical connection portion of the passive element 26 in the C36 is made of a high melting point solder material having a melting point (about 235 ° C.) higher than the working temperature (about 235 ° C.) of the reflow soldering method. Because it is formed
It does not melt. Therefore, the hybrid IC3
No bulging or cracking of the resin encapsulant 34 in 6 occurs inevitably, and neither open defects nor short circuit defects occur inside the resin encapsulant 34. That is, according to the present embodiment, the hybrid IC 36 can be collectively reflow soldered to the motherboard 60A together with other mounted components. As a result, hybrid IC3
6 is a resin encapsulant 3 as a whole except for the outer leads 19b.
Motherboard 60A by resin sealing with 4
It is possible to avoid the increase in the reflow soldering process cost, and hence the manufacturing cost of the motherboard as a whole.

According to the above embodiment, the following effects can be obtained. (1) Passive element 26 in hybrid IC 36
Since the solder connection portion 27 of is formed by using a high melting point solder material having a high melting point (about 235 ° C.) higher than the working temperature (about 235 ° C.) of the reflow soldering method, the printed wiring board of the hybrid IC 36 is formed. When performing the reflow soldering method to 60, it does not melt. As a result, swelling and cracking of the resin encapsulant 34 that occurs when the soldering portion 27 as the solder connecting portion inside the hybrid IC 36 is melted does not necessarily occur.

(2) The connection portion for electrically and mechanically connecting the passive element 26 to the passive element land 24 is formed by the high melting point soldering portion 27 and does not melt during the reflow soldering process. Therefore, even if the distance between the terminal portions 26a of the passive element 26 is small, a short circuit failure due to a bridge phenomenon or the like does not occur. As a result, the mounting density of the passive element group 26 inside the hybrid IC 36 can be increased.

(3) The passive element 2 is formed by forming the connection portion for electrically and mechanically connecting the passive element 26 to the passive element land 24 by the high melting point soldering portion 27.
Even when the surface of the terminal portion 26a of No. 6 is coated with the solder plating film, the connection strength of the connection portion 27 for electrically and mechanically connecting the passive element 26 to the land 24 is kept extremely high. can do.

(4) Since the hybrid IC 36 can be collectively reflow-soldered together with other mounting components on the motherboard 60A, the hybrid IC 36 can be processed.
Motherboard 60 obtained by resin-encapsulating 36 with resin encapsulant 34 excluding outer leads 19b
It is possible to avoid an increase in the reflow soldering treatment cost of A, and hence the manufacturing cost of the motherboard as a whole.

FIG. 10 is a front sectional view showing a hybrid IC which is Embodiment 2 of the present invention.

The second embodiment differs from the first embodiment in that
The hybrid IC 36A is provided with a case mold type package 37. That is, the case mold type package 37 includes the wiring board 20A and the header 38. Internal substrate 2 of the first embodiment
Similarly to 0, the passive element 26 is electrically and mechanically connected to the passive element land 24 by the high melting point soldering portion 27 on one main surface (hereinafter referred to as the upper surface) of the wiring board 20A, A pellet 28 as an active element is bonded by a pellet bonding part 29 made of silver paste. The integrated circuit of the pellet 28 is electrically drawn to the outside by the bonding wire 31.

Further, a plurality of bonding portions 22A for bonding the outer leads 39 are formed on one end side of the upper surface of the wiring board 20A. They are electrically and mechanically connected by 27. Electric wiring (not shown) is appropriately arranged on the upper surface of the wiring board 20A, and the passive elements 26 and the pellets 28 are electrically connected to the bonding portions 22A by this electric wiring.

On the other hand, the header 38 is formed in a rectangular box shape by using a material having good thermal conductivity such as iron or copper, and the wiring board 20A is housed in the header 38 to have a high melting point. Bonding part 2 made of solder material
It is fixed by 7. Then, the lead 39 bonded to the wiring board 20A is projected to the outside of the header 38 and is bent and formed into a desired shape.

Passive element 2 mounted on wiring board 20A
6 and the pellet 28 are non-hermetically sealed by a resin sealing body 34A which is a non-hermetic sealing body formed of potting resin. As a potting resin for molding the resin sealing body 34A, there is a molding material containing an epoxy resin as a main component. The molding method of the resin sealing body 34A by the potting method can be carried out by applying the potting resin to the passive elements 26 and the pellets 28 on the wiring board 20A so as to cover them with a dispenser or the like.

In this embodiment, the outer leads 39 bonded to the wiring board 20A are the resin encapsulant 34A.
Is non-airtightly sealed by a resin sealing body 34B as a non-airtight sealing body formed of potting resin having different components. As a potting resin for molding the resin sealing body 34B, there is a molding material containing silicone resin as a main component. The molding method of the resin sealing body 34B by the potting method can be carried out by applying the potting resin so as to cover the high melting point soldering portion 27 on the wiring board 20A with a dispenser or the like.

Also in the second embodiment, the resin sealing body 34A is used.
The non-hermetically sealed solder connection part of the passive element 26 and the non-hermetically sealed outer lead 3 in the resin sealing body 34B.
Since the solder connection portions 9 are formed by the high melting point soldering portions 27, the same action and effect as those of the first embodiment can be obtained.

FIG. 11 is a partially omitted perspective view showing a mounting example of the hybrid IC according to the second embodiment on the motherboard of the mobile telephone.

In this mounting example, the hybrid IC3
6A is configured as a high frequency amplification module used in a mobile telephone. A cap 37a is placed on the case mold type package 37.
Since the mother board 60B corresponding to the printed wiring board 60 according to the embodiment shown in FIG. 1 is configured substantially the same as the printed wiring board 60 shown in FIG. 1, its detailed description will be omitted. The description is omitted. The hybrid IC 36A described with reference to FIG. 10 is soldered to the mother board 60B using a solder material having a normal melting point as in the case described with reference to FIG. Furthermore, the method of reflow soldering the hybrid IC 36A to the mother board 60B is as shown in FIG.
As described above, the conventional reflow soldering method is used.

In the method of reflow soldering the hybrid IC 36A to the mother board 60B, in addition to the hybrid IC 36A which is the high frequency amplification module according to the present embodiment, an IC 64B having a central processing unit (CPU) circuit is constructed on the mother board 60B. , Various types of passive elements 26B such as chip capacitors, chip resistors, and inductors are mounted and subjected to reflow soldering processing. Then, as described with reference to FIG. 9, the point that the hybrid IC 36A can be collectively subjected to the reflow soldering processing together with these mounted parts is a remarkable action and effect in the present embodiment. .

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

The melting point of the high melting point solder material forming the solder connection portion inside the resin encapsulant is not limited to that in the above-mentioned embodiment, but is optimum corresponding to the melting point of the solder material used in the reflow soldering process of the outer leads. It is desirable to select a value.

In particular, in the reflow soldering process for the outer leads, when a low melting point solder material having a melting point of less than 183 ° C. is used, the high melting point solder material forming the solder connection portion inside the resin encapsulant is Melting point about 18
It should be noted that it is possible to select from those above 3 ° C. In other words, under the special circumstances in which low melting point solder material with low versatility is used in the reflow soldering process of the outer leads, the solder material used to form the solder connection part inside the resin encapsulant is It can also be selected from among ordinary solder materials having high properties. That is, the melting point of the solder material forming the solder connection portion inside the resin sealing body may be relatively higher than the melting point of the solder material used for the reflow soldering process of the outer leads.

The material for molding the non-hermetically sealed body is not limited to the above-mentioned embodiment, and can be appropriately selected according to the usage conditions of the hybrid IC. Further, the shape and structure of the package are not limited to the QFP and the case mold type, and can be appropriately selected according to the application of the hybrid IC and the customer's desire.

In the above explanation, the case where the invention made by the present inventor is mainly applied to the hybrid IC which is the background field of application has been mainly explained, but the present invention is not limited to this, and the non-hermetic sealing is performed. It can be applied to all semiconductor devices having a solder connection part inside the body.

[0080]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

The solder connection portion in the non-hermetically sealed body of the semiconductor device is formed by using a solder material having a melting point relatively higher than that of the solder material used for the reflow soldering process of the outer leads. Therefore, it does not melt when the reflow soldering method of the semiconductor device to the printed wiring board is performed. As a result, swelling or cracking of the non-hermetically sealed body that occurs when the solder connection portion inside the non-hermetically sealed body of the semiconductor device is melted does not necessarily occur.

By forming the connection portion in the non-hermetically sealed body of the semiconductor device by using a solder material having a relatively high melting point, short circuit failure due to a bridge phenomenon or the like can be prevented even if the connection portion is narrow. Since it can be prevented from occurring, the mounting density of the connecting portion group inside the non-hermetically sealed body can be increased.

By forming the connection portion in the non-hermetically sealed body of the semiconductor device by using the solder material, even if the solder plating film is applied to the connection interface of the connection portion, The connection strength can be kept extremely high.

[Brief description of drawings]

FIG. 1 shows a hybrid IC according to an embodiment of the present invention, in which (a) is a front sectional view and (b) is an enlarged partial perspective view showing a soldering portion of an outer lead.

FIG. 2 shows a multiple lead frame used in the method for manufacturing the hybrid IC, in which (a) is a partially omitted plan view and (b) is a front sectional view.

3A and 3B show an internal substrate used in the hybrid IC manufacturing method, wherein FIG. 3A is a front sectional view and FIG. 3B is a plan view.

FIG. 4 shows after a passive element soldering process,
(A) is a front sectional view and (b) is a plan view.

FIG. 5 shows after the pellet bonding process,
(A) is a front sectional view and (b) is a plan view.

6A is a front sectional view showing a state after a lead frame assembling step, and FIG. 6B is a front sectional view showing a state after a wire bonding step.

FIG. 7 is a partially omitted vertical sectional view showing a molding step of a resin sealing body.

FIG. 8 shows a molded body after molding the resin encapsulant,
(A) is a partially cutaway plan view and (b) is a front sectional view.

FIG. 9 is a partially omitted perspective view showing an example of mounting the hybrid IC on a motherboard of a mobile phone.

FIG. 10 is a hybrid IC according to another embodiment of the present invention.
It is a front sectional view showing.

FIG. 11 is a partially omitted perspective view showing an example of mounting the hybrid IC on a motherboard of a mobile phone.

12 (a) and 12 (b) are front sectional views showing conventional examples.

[Explanation of symbols]

11 ... Multiple lead frame, 12 ... Unit lead frame, 13 ... Outer frame, 14 ... Section frame, 15 ... Dam suspension member, 16 ... Dam member, 16a ... Dam, 17 ... Tab suspension lead, 18 ... Tab, 19 ... Leads, 19a ... Inner part (inner lead), 19b ... Outer part (outer lead), 20 ... Internal board (wiring board), 21 ... Internal board body, 21a, 21b ... Top and bottom surface, 22 ... Wire bonding section, 22A ... Outer lead bonding part,
23 ... Lead frame fixing part, 24 ... Passive element land, 25 ... Active element land, 26, 26A, 26B ...
Passive elements, 27 ... Connection parts made of high melting point solder material (high melting point soldering parts), 28 ... Pellets (active elements), 2
9 ... Pellet bonding part made of silver paste, 30
... Lead frame bonding portion, 31, 32 ... Bonding wire, 33 ... Assembly, 34, 34A, 34B ...
Resin sealing body (non-airtight sealing body), 35 ... Molded body, 36 ... Q
Hybrid IC (semiconductor device) equipped with FP, 3
6A ... Hybrid IC (semiconductor device) equipped with case mold type package, 37 ... Case mold type package, 38 ... Header, 39 ... Outer lead, 40 ... Transfer molding device, 41 ... Upper mold, 42
... Lower mold, 43 ... Cavity, 44 ... Pot, 45 ... Plunger, 46 ... Cull, 47 ... Runner, 48 ... Gate,
49 ... Escape recess, 50 ... Resin, 60 ... Printed wiring board, 60A, 60B ... Motherboard, 61 ... Main body, 62
… Land, 63… Reflow soldering part.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 25/04 25/18

Claims (6)

[Claims] 1. A connection part formed of a solder material and sealed with a non-hermetically sealed body, and an outer lead protruding from the non-hermetically sealed body and connected to the outside by a solder material. In the semiconductor device, the connection portion inside the non-hermetically sealed body is formed of a solder material having a melting point higher than a melting point of a solder material used for solder connection with the outside of the outer lead. Semiconductor device. 2. The semiconductor device according to claim 1, wherein the connecting portion is formed on the wiring board, and the wiring board is configured to have durability against deformation, disconnection, and the like. 3. The connection portion inside the non-hermetically sealed body comprises:
The semiconductor device according to claim 1 or 2, wherein the semiconductor device is formed of a solder material having a melting point of 183 ° C or higher. 4. The solder material for connecting the outer lead to the outside has a melting point of less than 183 ° C., and the internal connecting portion is formed of a solder material having a melting point higher than that of the solder material for connecting the outer lead to the outside. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device. 5. A non-hermetically sealed body is provided with a connecting portion formed of a solder material, and an outer lead projecting from the non-hermetically sealed body and connected to the outside by a solder material. In the method for manufacturing a semiconductor device, a step of connecting an electronic component to a wiring board by a connecting portion formed of a solder material having a melting point higher than that of a solder material used for solder connection with the outside of the outer lead, And a step of fixing a lead frame for forming the outer lead to the wiring board, and a step of forming the non-hermetically sealed body so as to seal at least the solder connection portion. And a method for manufacturing a semiconductor device. 6. The method for manufacturing a semiconductor device according to claim 5, wherein the non-hermetically sealed body that seals the solder connection portion is made of resin.