JPH07169995A - Thermoelement array - Google Patents
Thermoelement arrayInfo
- Publication number
- JPH07169995A JPH07169995A JP5316663A JP31666393A JPH07169995A JP H07169995 A JPH07169995 A JP H07169995A JP 5316663 A JP5316663 A JP 5316663A JP 31666393 A JP31666393 A JP 31666393A JP H07169995 A JPH07169995 A JP H07169995A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- thermoelectric element
- type semiconductors
- array
- electromotive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000003491 array Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910005329 FeSi 2 Inorganic materials 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ゼーベック効果を利用
し、かつ高起電力を得るように構成された熱電素子アレ
イに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric element array that utilizes the Seebeck effect and is configured to obtain a high electromotive force.
【０００２】[0002]
【従来の技術】従来の一般的な熱電素子は、ｐ型半導体
のブロック体とｎ型半導体のブロック体が金属を介して
接合（π型接合）されたものである。その接合部（高温
端）を熱すると、ベーゼック効果により、高温端とその
反対側の半導体端部（低温端）の温度差に応じた起電力
を発生する。例えば、半導体組成としてＦｅＳｉ2 系を
用いた、温度差６００℃で０．３Ｖの起電力を発生する
素子が作られている。2. Description of the Related Art A conventional general thermoelectric element is one in which a block body made of a p-type semiconductor and a block body made of an n-type semiconductor are joined via a metal (π-type junction). When the junction (high temperature end) is heated, an electromotive force is generated due to the temperature difference between the high temperature end and the semiconductor end (low temperature end) on the opposite side due to the Beseck effect. For example, an element that uses a FeSi 2 system as a semiconductor composition and generates an electromotive force of 0.3 V at a temperature difference of 600 ° C. has been manufactured.
【０００３】得られる起電力がｐ型半導体とｎ型半導体
との一組（一対）だけでは小さい場合、これらを直列に
数対あるいは数十対接続し所望の起電力を得る。例え
ば、先に挙げた０．３Ｖを発生する素子を５個直列につ
なぎ、すべての素子に６００℃の温度差を与えると、ト
ータルで１．５Ｖの起電力を得ることができる。熱源が
フラットである程度の面積がある場合、図３に示すよう
に、複数の熱電素子の高温端を平面上に配列し、電気的
に直列に接続することで一対の素子よりも起電力の大き
い熱電素子アレイを作製し、熱エネルギーを電気エネル
ギーに変換することができる。When the electromotive force obtained is small with only one set (pair) of the p-type semiconductor and the n-type semiconductor, a desired electromotive force is obtained by connecting several pairs or tens of pairs of these in series. For example, if the five elements that generate 0.3 V described above are connected in series and a temperature difference of 600 ° C. is applied to all the elements, a total electromotive force of 1.5 V can be obtained. When the heat source is flat and has a certain area, as shown in FIG. 3, by arranging the high temperature ends of a plurality of thermoelectric elements on a plane and electrically connecting them in series, the electromotive force is larger than that of a pair of elements. Thermoelectric element arrays can be made to convert thermal energy into electrical energy.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、高起電
力を得るためにはｐ型半導体とｎ型半導体の対の数を増
やす必要があり、ｐ型半導体とｎ半導体とそれらを接合
する金属材の設置スペースが増えるため必然的に熱電素
子アレイの面積も増加せざるを得なかった。各半導体を
細くすると省スペースにはなるが、組み立てや配線が難
しくなり、かつ直列接続なので半導体の一本でも破損す
ると熱電素子アレイ全体の起電力が得られなくなるとい
う欠陥があった。However, in order to obtain a high electromotive force, it is necessary to increase the number of pairs of the p-type semiconductor and the n-type semiconductor, and the p-type semiconductor and the n-semiconductor and the metal material for joining them are required. Since the installation space is increased, the area of the thermoelectric element array is inevitably increased. If each semiconductor is made thin, space is saved, but assembly and wiring are difficult, and there is a defect that if one of the semiconductors is damaged because of serial connection, the electromotive force of the entire thermoelectric element array cannot be obtained.
【０００５】本発明は、上記事情に鑑み、小面積で高起
電力が得られ、しかも組立てが容易な熱電素子アレイを
提供することを目的とする。In view of the above circumstances, it is an object of the present invention to provide a thermoelectric element array which can obtain a high electromotive force in a small area and can be easily assembled.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成する本発
明の熱電素子アレイは、高温端側がＰ−Ｎ接合されると
ともに低温端側が絶縁層を介して積層されたＰ型半導体
とＮ型半導体との対が一対以上積層された積層型熱電素
子が、高温端どうしが同一面上に並ぶように複数個配列
されるとともに互いに電気的に接続されてなることを特
徴とする。A thermoelectric element array according to the present invention that achieves the above object has a P-type semiconductor and an N-type semiconductor in which a high temperature end side is PN junctioned and a low temperature end side is laminated via an insulating layer. A plurality of laminated thermoelectric elements in which pairs of and are laminated are arranged so that the high temperature ends are arranged on the same plane, and are electrically connected to each other.
【０００７】[0007]
【作用】本発明の熱電素子アレイは、アレイの要素とな
る熱電素子として、上記の積層型熱電素子が用いられて
いるため、例えば図３に示すようなアルミナ基板等の上
に新たな金属接続を作る必要がない。さらに、積層型熱
電素子は、対の数を増やした分だけ起電力が増加する。
例えば、１個の素子内にｐ−ｎの組を６対形成した素子
では、その１個の素子だけで温度差６００℃１で１．５
Ｖの起電力が得られる。In the thermoelectric element array of the present invention, since the above-mentioned laminated thermoelectric element is used as a thermoelectric element that is an element of the array, a new metal connection is made on, for example, an alumina substrate as shown in FIG. You don't have to make Further, in the laminated thermoelectric element, the electromotive force increases as the number of pairs increases.
For example, in an element in which 6 pairs of pn pairs are formed in one element, the temperature difference of 600 ° C. is 1.5 in only one element.
An electromotive force of V is obtained.
【０００８】図３に示すような、従来品を多数の直列接
続して平面上に配置した場合と比べて、少ない素子数、
すなわち小面積で同等の起電力を持つアレイを作製する
ことができる。また、同面積のアレイを作製した場合、
従来のπ型接合素子を用いたものに比べて数倍〜数十倍
の起電力を得ることができる。さらに、ｐ型半導体とｎ
型半導体との間の高温端での金属接合が不要であるた
め、配置の自由度が高い。As compared with the case where a large number of conventional products are connected in series and arranged on a plane as shown in FIG.
That is, it is possible to manufacture an array having a small area and an equivalent electromotive force. If an array with the same area is made,
It is possible to obtain an electromotive force that is several times to several tens of times that of the conventional one using a π-type junction element. Furthermore, p-type semiconductor and n
Since there is no need for metal bonding to the type semiconductor at the high temperature end, the degree of freedom of arrangement is high.
【０００９】[0009]
【実施例】以下、本発明の実施例について説明する。図
１は、本発明の熱電素子アレイを構成する１個の熱電素
子の一例を示す斜視図である。この積層型熱電素子１
は、絶縁体層３を挟んでｐ型半導体層１ｃとｎ型半導体
層１ｄが積層されることにより構成されている。積層型
熱電素子１の高温端１ａは、ｐ及びｎ型半導体層１ｃ，
１ｄがＰ−Ｎ接合されている。また、積層型熱電素子１
の低温端１ｂの上面および下面にはメッキ電極４が形成
されており（下面側のメッキ電極は図面上はあらわれて
いない）、このメッキ電極４にはリード線５が半田付け
されている。EXAMPLES Examples of the present invention will be described below. FIG. 1 is a perspective view showing an example of one thermoelectric element constituting the thermoelectric element array of the present invention. This laminated thermoelectric element 1
Is configured by stacking a p-type semiconductor layer 1c and an n-type semiconductor layer 1d with the insulator layer 3 interposed therebetween. The high temperature end 1a of the laminated thermoelectric element 1 has a p-type and an n-type semiconductor layer 1c,
1d has a P-N junction. In addition, the laminated thermoelectric element 1
A plating electrode 4 is formed on the upper surface and the lower surface of the low temperature end 1b (the plating electrode on the lower surface side is not shown in the drawing), and a lead wire 5 is soldered to the plating electrode 4.
【００１０】この積層型熱電素子１を構成するｐ型半導
体層１ｃは例えばＦｅＳｉ2 にＣｒを添加した組成を有
し、ｎ型半導体層１ｄは例えばＦｅＳｉ2 にＣｏを添加
した組成を有し、絶縁体層３は例えばＺｒＯ2 とガラス
の混合物の組成を有している。この積層型熱電素子１
は、一例として以下のようにして形成される。The p-type semiconductor layer 1c constituting the laminated thermoelectric element 1 has a composition in which Cr is added to FeSi 2 , for example, and the n-type semiconductor layer 1d has a composition in which Co is added to FeSi 2 , for example. The insulator layer 3 has a composition of, for example, a mixture of ZrO 2 and glass. This laminated thermoelectric element 1
Is formed as follows as an example.
【００１１】先ず上記各組成にそれぞれ溶媒とバインダ
ーを加え混合調整して各泥漿を得、それぞれの泥漿から
ドクターブレード法によりグリーンシート（図示せず）
を得る。ｐ型半導体とｎ型半導体のグリーンシートを所
定の大きさに切断し、また絶縁体のグリーンシートをｐ
型半導体，ｎ型半導体の寸法よりも小さい所定の大きさ
に切断する。切断されたｐ型半導体のグリーンシートと
ｎ型半導体のグリーンシートが、高温端１ａと低温端１
ｂで交互に接続されるように（図１参照）、ｐ型半導体
のグリーンシートとｎ型半導体のグリーンシートとの間
に絶縁体のグリーンシートを挟んで、それらグリーンシ
ートを積層して熱圧着する。First, a solvent and a binder are added to each of the above compositions to prepare a mixture, and each slurry is obtained. A green sheet (not shown) is prepared from each slurry by a doctor blade method.
To get Cut the green sheets of p-type semiconductor and n-type semiconductor to a specified size, and cut the green sheet of insulator into p
It is cut into a predetermined size smaller than the dimensions of the type semiconductor and the n-type semiconductor. The cut p-type semiconductor green sheet and the n-type semiconductor green sheet are cut into the high temperature end 1a and the low temperature end 1
The green sheets of the insulator are sandwiched between the green sheets of the p-type semiconductor and the green sheets of the n-type semiconductor so that the green sheets of the p-type semiconductor and the green sheets of the n-type semiconductor are sandwiched so that they are alternately connected by b (see FIG. 1), and the green sheets are laminated and thermocompression bonded. To do.
【００１２】このようにして得られた積層グリーンブロ
ックを、所定の大きさに切断して成形体を得る。この成
形体を空気中において脱脂した後に真空中において無加
圧で焼成する。アニール操作の後の成形体の、後に低温
端として用いられる一端に、図１に示すようにメッキ電
極４を形成し、それらのメッキ電極４にリード線５を半
田付けする。このようにして積層型熱電素子１が形成さ
れる。The laminated green block thus obtained is cut into a predetermined size to obtain a molded body. This molded body is degreased in air and then fired in vacuum without pressure. As shown in FIG. 1, the plated electrode 4 is formed on one end of the molded body after the annealing operation, which will be used as a low temperature end later, and the lead wire 5 is soldered to the plated electrode 4. In this way, the laminated thermoelectric element 1 is formed.
【００１３】図２は、本発明の熱電素子アレイの一実施
例の斜視図である。ここでは、上記のようにして形成し
た、長さ３０ｍｍ、幅６ｍｍ、厚み５ｍｍの、ｐ型半導
体とｎ型半導体との対が６対形成された積層型熱電素子
１を９個使用した。各々の素子は、６００℃の温度差で
１．５Ｖ以上の起電力を発生する。これらの素子の高温
端を厚さ０．６ｍｍのアルミナ基板１０に、約５ｍｍピ
ッチで３×３の配列でアルミナセメントで固定した。各
素子１はリード線の半田付けで電気的に直列に接続し
た。FIG. 2 is a perspective view of an embodiment of the thermoelectric element array of the present invention. Here, nine stacked thermoelectric elements 1 having a length of 30 mm, a width of 6 mm, and a thickness of 5 mm, each having six pairs of a p-type semiconductor and an n-type semiconductor formed, were used. Each element generates an electromotive force of 1.5 V or more with a temperature difference of 600 ° C. The high temperature ends of these devices were fixed to an alumina substrate 10 having a thickness of 0.6 mm with alumina cement in a 3 × 3 arrangement at a pitch of about 5 mm. Each element 1 was electrically connected in series by soldering a lead wire.
【００１４】アルミナ基板１をホットプレートで均一に
加熱したところ、高温端と低温端の温度差が１００℃で
１．５Ｖの起電力を発生した。従来のπ型接合素子を６
個使った同面積のアレイ（図３参照）の場合１００℃で
０．３Ｖの起電力であるから、本発明品では従来品の５
倍の起電力を得ることができた。When the alumina substrate 1 was uniformly heated by a hot plate, an electromotive force of 1.5 V was generated when the temperature difference between the high temperature end and the low temperature end was 100 ° C. The conventional π-junction element is 6
In the case of an array of the same area used (see FIG. 3), the electromotive force is 0.3 V at 100 ° C.
It was possible to obtain double the electromotive force.
【００１５】[0015]
【発明の効果】以上説明したように、本発明により、従
来に比べ、同じ寸法で高出力の熱電素子アレイを容易に
得ることができる。また、ｐ型半導体とｎ型半導体間の
高温端での金属接合が不要であるため、配置の自由度が
高く、様々なニーズに対応し易い。As described above, according to the present invention, it is possible to easily obtain a thermoelectric element array having the same size and high output as compared with the conventional one. Moreover, since metal bonding between the p-type semiconductor and the n-type semiconductor at the high temperature end is not required, the degree of freedom of arrangement is high and it is easy to meet various needs.
【図１】本発明の熱電素子アレイを構成する１個の熱電
素子の一例を示す斜視図である。FIG. 1 is a perspective view showing an example of one thermoelectric element that constitutes a thermoelectric element array of the present invention.
【図２】本発明の熱電素子アレイの一実施例の斜視図で
ある。FIG. 2 is a perspective view of an embodiment of the thermoelectric element array of the present invention.
【図３】従来の、π型接合熱電素子アレイを示す斜視図
である。FIG. 3 is a perspective view showing a conventional π-type junction thermoelectric element array.
１ 積層型熱電素子 １ａ 高温端 １ｂ 低温端 １ｃ ｐ型半導体 １ｄ ｎ型半導体 ３ 絶縁体 １０ アルミナ基板 DESCRIPTION OF SYMBOLS 1 Multilayer thermoelectric element 1a High temperature end 1b Low temperature end 1c p-type semiconductor 1d n-type semiconductor 3 Insulator 10 Alumina substrate
Claims (1)
温端側が絶縁層を介して積層されたＰ型半導体とＮ型半
導体との対が一対以上積層された積層型熱電素子が、高
温端どうしが同一面上に並ぶように複数個配列されると
ともに互いに電気的に接続されてなることを特徴とする
熱電素子アレイ。1. A laminated thermoelectric element in which one or more pairs of a P-type semiconductor and an N-type semiconductor, in which a high temperature end side is PN junctioned and a low temperature end side is laminated via an insulating layer, are laminated. A thermoelectric element array, wherein a plurality of thermoelectric element arrays are arranged so that they are arranged on the same plane and are electrically connected to each other.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5316663A JPH07169995A (en) | 1993-12-16 | 1993-12-16 | Thermoelement array |
| EP95902936A EP0685893A4 (en) | 1993-12-16 | 1994-12-09 | Thermoelectric conversion element, thermoelectric conversion element array, and thermal displacement converter. |
| PCT/JP1994/002076 WO1995017020A1 (en) | 1993-12-16 | 1994-12-09 | Thermoelectric conversion element, thermoelectric conversion element array, and thermal displacement converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5316663A JPH07169995A (en) | 1993-12-16 | 1993-12-16 | Thermoelement array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07169995A true JPH07169995A (en) | 1995-07-04 |
Family
ID=18079527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5316663A Withdrawn JPH07169995A (en) | 1993-12-16 | 1993-12-16 | Thermoelement array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07169995A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011198831A (en) * | 2010-03-17 | 2011-10-06 | Fujitsu Ltd | Thermoelectric conversion module and complex thermoelectric conversion element |
| JP2014514740A (en) * | 2011-03-22 | 2014-06-19 | テクニカル ユニヴァーシティー オブ デンマーク | Structure useful for production of thermoelectric generator, thermoelectric generator provided with the structure, and method for producing the thermoelectric generator |
| WO2019003582A1 (en) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Thermoelectric conversion module and electronic component module |
-
1993
- 1993-12-16 JP JP5316663A patent/JPH07169995A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011198831A (en) * | 2010-03-17 | 2011-10-06 | Fujitsu Ltd | Thermoelectric conversion module and complex thermoelectric conversion element |
| JP2014514740A (en) * | 2011-03-22 | 2014-06-19 | テクニカル ユニヴァーシティー オブ デンマーク | Structure useful for production of thermoelectric generator, thermoelectric generator provided with the structure, and method for producing the thermoelectric generator |
| WO2019003582A1 (en) * | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Thermoelectric conversion module and electronic component module |
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Legal Events
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|---|---|---|---|
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