JPH07169983A - Infrared wireless receiver - Google Patents
Infrared wireless receiverInfo
- Publication number
- JPH07169983A JPH07169983A JP5311993A JP31199393A JPH07169983A JP H07169983 A JPH07169983 A JP H07169983A JP 5311993 A JP5311993 A JP 5311993A JP 31199393 A JP31199393 A JP 31199393A JP H07169983 A JPH07169983 A JP H07169983A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- photodiode
- infrared
- signal amplifier
- wireless receiver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体電子部品に係
り、特に赤外線を用いたワイヤレス受信器に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor electronic component, and more particularly to a wireless receiver using infrared rays.
【０００２】[0002]
【従来の技術】従来、通常の赤外線ワイヤレス受信器
は、図５に示すように赤外線に反応するフォトダイオー
ドＩＣ201と、信号増幅ＩＣ202と、プリント基板203
と、フォトダイオードＩＣ201上が光通過孔として開口
された金属性のシールドケース204等を備えている。2. Description of the Related Art Conventional infrared wireless receivers, as shown in FIG. 5, include a photodiode IC 201 that responds to infrared rays, a signal amplification IC 202, and a printed circuit board 203.
And a metallic shield case 204 and the like opened on the photodiode IC 201 as a light passage hole.
【０００３】前記受信器では、フォトダイオードＩＣ20
1と信号増幅ＩＣ202を固定し、かつ接続するためにプリ
ント基板203が必要であり、またフォトダイオードＩＣ2
01からの微小な信号を増幅するために、プリント基板20
3上の配線へのノイズ混入を防ぐ必要があり、回路の大
部分を覆う金属性のシールドケース204も必要であっ
た。In the receiver, the photodiode IC20
A printed circuit board 203 is required to fix and connect 1 and the signal amplification IC 202, and the photodiode IC 2
Printed circuit board 20 to amplify the minute signal from 01
It was necessary to prevent noise from being mixed into the wiring above, and a metallic shield case 204 covering most of the circuit was also required.
【０００４】[0004]
【発明が解決しようとする課題】前記従来の赤外線ワイ
ヤレス受信器では、上述したように少なくとも２個のＩ
Ｃを載せるプリント基板とシールドケースが必要、また
空気調和機のように部屋全体をカバーする受信性能を保
つためには、高性能なフォトダイオードＩＣを用いらな
ければならず、小型化，低コスト化が困難という問題を
有していた。In the conventional infrared wireless receiver, as described above, at least two I's are used.
A printed circuit board on which C is placed and a shield case are required, and a high-performance photodiode IC must be used in order to maintain reception performance that covers the entire room like an air conditioner, resulting in downsizing and cost reduction. It had a problem that it was difficult to make it.
【０００５】本発明の目的は、ノイズの混入が防げ、し
かも小型かつ安価な赤外線ワイヤレス受信器を提供する
ことにある。An object of the present invention is to provide an infrared wireless receiver which can prevent noise from entering and which is small and inexpensive.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明の赤外線ワイヤレス受信器は、赤外線に反応
するフォトダイオードの半導体チップと、フォトダイオ
ードの半導体チップに接続されて、フォトダイオードの
半導体チップからの信号の特定周波数帯域を選択的に復
調，増幅，波形整形する信号増幅器の半導体チップと、
フォトダイオードの半導体チップと信号増幅器の半導体
チップを赤外線透過性樹脂で一体にモールドし、信号増
幅器の半導体チップの周囲を黒色樹脂部とした樹脂ブロ
ックと、信号増幅器の半導体チップに接続する３本以上
の端子とから構成したことを特徴とする。In order to achieve the above object, an infrared wireless receiver of the present invention is connected to a semiconductor chip of a photodiode which reacts to infrared rays and a semiconductor chip of the photodiode, and a semiconductor of the photodiode. A semiconductor chip of a signal amplifier that selectively demodulates, amplifies, and shapes a specific frequency band of a signal from the chip,
3 or more that connects the semiconductor chip of the photodiode and the semiconductor chip of the signal amplifier integrally with the infrared permeable resin, and the resin block with the black resin part around the semiconductor chip of the signal amplifier and the semiconductor chip of the signal amplifier It is characterized in that it is configured with the terminal of.
【０００７】また、前記フォトダイオードの半導体チッ
プの上部を赤外線透過性樹脂とし、前記フォトダイオー
ドの半導体チップと前記信号増幅器の半導体チップを黒
色樹脂で一体モールドして構成したことを特徴とする。An upper portion of the semiconductor chip of the photodiode is made of an infrared transparent resin, and the semiconductor chip of the photodiode and the semiconductor chip of the signal amplifier are integrally molded with black resin.
【０００８】さらに、前記フォトダイオードの半導体チ
ップ上部の赤外線透過性樹脂と、黒色樹脂との接合部の
角度を前記フォトダイオードの半導体チップに対して任
意の角度としたことを特徴とする。Further, it is characterized in that the angle between the infrared transparent resin on the semiconductor chip of the photodiode and the black resin is arbitrary with respect to the semiconductor chip of the photodiode.
【０００９】[0009]
【作用】本発明は前記構成により、フォトダイオードの
半導体チップと信号増幅器の半導体チップを一体モール
ドすることで、非常に短い接続線で接続することが可能
となり、フォトダイオードで変換された微弱な電気信号
はノイズが載ることなく増幅される。しかも信号増幅器
の半導体チップ近傍を黒色樹脂で覆うことにより信号増
幅器の誤動作を防止する。こうすることにより、小型で
高い信頼性を有する赤外線ワイヤレス受信器が実現され
る。According to the present invention, the semiconductor chip of the photodiode and the semiconductor chip of the signal amplifier can be integrally molded by the above-described structure, so that they can be connected by a very short connecting line, and the weak electric power converted by the photodiode can be connected. The signal is amplified without noise. Moreover, the malfunction of the signal amplifier is prevented by covering the vicinity of the semiconductor chip of the signal amplifier with black resin. By doing this, a compact and highly reliable infrared wireless receiver is realized.
【００１０】また、前記フォトダイオードの半導体チッ
プの上部のみを赤外線透過性樹脂とすることで、高価な
赤外線透過性樹脂の使用を少なくする。Further, by using the infrared transparent resin only on the upper portion of the semiconductor chip of the photodiode, the use of expensive infrared transparent resin is reduced.
【００１１】さらに、前記赤外線透過性樹脂と黒色樹脂
との接合部の角度を変更することで、赤外線の受光角度
を任意に設定することが可能になる。Further, by changing the angle of the joint between the infrared transparent resin and the black resin, it is possible to set the infrared receiving angle arbitrarily.
【００１２】[0012]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１３】図１は本発明の赤外線ワイヤレス受信器の
第１実施例の構造を示す断面図、図２は第１実施例の斜
視図であり、101は赤外線に反応するフォトダイオード
の半導体チップ、102は、前記フォトダイオードの半導
体チップ101に接続し、フォトダイオードの半導体チッ
プ101からの信号の特定周波数帯域を選択的に復調，増
幅，波形整形する信号増幅器の半導体チップ、107は、
フォトダイオードの半導体チップ101と信号増幅器の半
導体チップ102を赤外線透過性樹脂104で一体にモールド
し、かつ信号増幅器の半導体チップ102の周囲を黒色樹
脂105とした樹脂ブロック、106は信号増幅器の半導体チ
ップ102に接続する３本以上の端子である。FIG. 1 is a sectional view showing the structure of a first embodiment of an infrared wireless receiver of the present invention, FIG. 2 is a perspective view of the first embodiment, 101 is a semiconductor chip of a photodiode which responds to infrared rays, 102 is a semiconductor chip of a signal amplifier which is connected to the semiconductor chip 101 of the photodiode and selectively demodulates, amplifies, and shapes the waveform of a signal from the semiconductor chip 101 of the photodiode, and 107 is
A resin block in which a semiconductor chip 101 of a photodiode and a semiconductor chip 102 of a signal amplifier are integrally molded with an infrared permeable resin 104, and a black resin 105 surrounds the semiconductor chip 102 of the signal amplifier, and 106 is a semiconductor chip of the signal amplifier. Three or more terminals connected to 102.
【００１４】以上の構成により、フォトダイオードの半
導体チップ101と信号増幅器の半導体チップ102が極めて
近傍に置かれ、非常に短いボンディングワイヤ103によ
り接続されるため、信号にノイズが載ることがない。ま
た、信号増幅器の半導体チップ102を黒色樹脂105で囲む
ことにより、外光等の影響を最小限に抑えることができ
る。With the above structure, since the semiconductor chip 101 of the photodiode and the semiconductor chip 102 of the signal amplifier are placed very close to each other and connected by the very short bonding wire 103, no noise is added to the signal. Further, by surrounding the semiconductor chip 102 of the signal amplifier with the black resin 105, the influence of external light or the like can be minimized.
【００１５】したがって、回路部品そのものが小型にな
ると共に、回路全体をシールドケースで囲う必要がなく
なる。Therefore, the circuit component itself becomes small, and it is not necessary to enclose the entire circuit in a shield case.
【００１６】次に、図３の断面図によって本発明の第２
実施例を説明する。ここで、第１実施例と同一の部材に
ついては、同一の符号を付けて説明を省略する。Next, the second embodiment of the present invention will be described with reference to the sectional view of FIG.
An example will be described. Here, the same members as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
【００１７】図３において、赤外線透過性樹脂104はフ
ォトダイオードの半導体チップ101の上部に設けられ、
黒色樹脂105によりフォトダイオードの半導体チップ101
と信号増幅器の半導体チップ102を一体にモールドして
いる。また、赤外線透過性樹脂104は外側部まで達して
いる。In FIG. 3, the infrared transparent resin 104 is provided on the semiconductor chip 101 of the photodiode,
Photodiode semiconductor chip 101 with black resin 105
And the semiconductor chip 102 of the signal amplifier are integrally molded. Further, the infrared transparent resin 104 reaches the outer side.
【００１８】以上の構成により、第１実施例と同様に外
光の影響及びノイズの影響を受けないという効果に加え
て、高価な赤外線透過性樹脂の使用量を少なくする。With the above construction, in addition to the effect of not being affected by outside light and noise as in the first embodiment, the amount of expensive infrared-transparent resin used is reduced.
【００１９】したがって、第１実施例と同様に、回路部
品そのものが小型になり、回路全体をシールドケースで
囲う必要もなくなるとともに、部品のコスト低減が図れ
る。Therefore, as in the first embodiment, the circuit component itself becomes smaller, it is not necessary to enclose the entire circuit in a shield case, and the cost of the component can be reduced.
【００２０】さらに、図４の断面図によって本発明の第
３実施例を説明する。ここで、第１，第２実施例と同一
の部材については、同一の符号を付けて説明を省略す
る。Further, a third embodiment of the present invention will be described with reference to the sectional view of FIG. Here, the same members as those in the first and second embodiments are designated by the same reference numerals and the description thereof will be omitted.
【００２１】図４において、フォトダイオードの半導体
チップ101の上部に設けられた赤外線透過性樹脂104と黒
色樹脂105の接合部Ａの角度α，α′をフォトダイオー
ドの半導体チップ101に対して90度以外の任意の角度と
する。In FIG. 4, the angles α, α'of the junction A of the infrared transparent resin 104 and the black resin 105 provided on the semiconductor chip 101 of the photodiode are 90 degrees with respect to the semiconductor chip 101 of the photodiode. Any angle other than
【００２２】以上の構成により、第１実施例と同様に外
光の影響及びノイズの影響を受けないという効果に加え
て、赤外線透過性樹脂104と黒色樹脂105の接合部Ａの角
度α，α′を変更することで、フォトダイオードの半導
体チップ101への赤外光導光角度を任意にとることがで
きる。With the above construction, in addition to the effect of not being affected by external light and noise as in the first embodiment, the angles α, α of the joint A of the infrared transmissive resin 104 and the black resin 105 can be obtained. By changing ′, it is possible to arbitrarily set the infrared light guiding angle of the photodiode to the semiconductor chip 101.
【００２３】したがって、前記第１実施例と同様に、回
路部品そのものが小型になり、回路全体をシールドケー
スで囲う必要もなくなるとともに、機器の使用目的に応
じてワイヤレス受信角度を設定できることになり、用途
が広がる。Therefore, as in the case of the first embodiment, the circuit components themselves are downsized, there is no need to enclose the entire circuit in a shield case, and the wireless reception angle can be set according to the purpose of use of the device. Expands applications.
【００２４】なお本実施例では、103をボンディングワ
イヤとしたが、短いリード線としても本発明を逸脱する
ものではない。またポリイミド等の薄い基板上にフォト
ダイオードの半導体チップ101と信号増幅器の半導体チ
ップ102を固定する構造としても本発明を逸脱するもの
ではない。Although the bonding wire 103 is used in this embodiment, a short lead wire does not depart from the scope of the present invention. Further, a structure in which the semiconductor chip 101 of the photodiode and the semiconductor chip 102 of the signal amplifier are fixed on a thin substrate such as polyimide does not depart from the present invention.
【００２５】[0025]
【発明の効果】以上説明したように、本発明の赤外線ワ
イヤレス受信器は、請求項１記載の発明によれば、フォ
トダイオードと信号増幅器が短い配線で接続可能となる
ために、耐ノイズ性が向上するなどワイヤレス受信器と
しての性能が向上する。また、フォトダイオードの性能
を落しても信号増幅器の増幅率を上げることによりワイ
ヤレス受信器としての性能が確保できるため安価に製作
できる。さらに、半導体チップを用いてフォトダイオー
ドと信号増幅器が１個のパッケージにまとめられるた
め、シールドケースが不要な小型の赤外線ワイヤレス受
信器が可能となる。As explained above, according to the invention of claim 1, the infrared wireless receiver of the present invention has a noise resistance because the photodiode and the signal amplifier can be connected by a short wiring. The performance as a wireless receiver is improved. Further, even if the performance of the photodiode is lowered, the performance as a wireless receiver can be secured by increasing the amplification factor of the signal amplifier, so that it can be manufactured at low cost. Further, since the photodiode and the signal amplifier are integrated into one package using the semiconductor chip, a small infrared wireless receiver that does not require a shield case can be realized.
【００２６】請求項２記載の発明によれば、高価な赤外
線透過性樹脂の使用を少なくすることによりさらに安価
になる。According to the second aspect of the present invention, the cost is further reduced by reducing the use of the expensive infrared ray transmissive resin.
【００２７】請求項３記載の発明によれば、赤外線透過
性樹脂と黒色樹脂の接合部の角度を変更することで、赤
外線の受光角度を任意に設定することができる。According to the third aspect of the invention, by changing the angle of the joint between the infrared transparent resin and the black resin, it is possible to arbitrarily set the infrared receiving angle.
【００２８】したがって、本発明の赤外線ワイヤレス受
信器は、機器内部の設置スペース，設置位置の自由度が
高まるなど実用的にきわめて有効である。Therefore, the infrared wireless receiver of the present invention is extremely effective in practical use, because the installation space inside the device and the degree of freedom of the installation position are increased.
【図１】本発明の赤外線ワイヤレス受信器の第１実施例
の断面図である。FIG. 1 is a sectional view of a first embodiment of an infrared wireless receiver of the present invention.
【図２】第１実施例の斜視図である。FIG. 2 is a perspective view of the first embodiment.
【図３】本発明の第２実施例の断面図である。FIG. 3 is a sectional view of a second embodiment of the present invention.
【図４】本発明の第３実施例の断面図である。FIG. 4 is a sectional view of a third embodiment of the present invention.
【図５】従来例における赤外線ワイヤレス受信器の断面
図である。FIG. 5 is a sectional view of an infrared wireless receiver in a conventional example.
101…フォトダイオードの半導体チップ、 102…信号増
幅器の半導体チップ、103…ボンディングワイヤ、 104
…赤外線透過性樹脂、 105…黒色樹脂、106…端子、
107…樹脂ブロック。101 ... Photodiode semiconductor chip, 102 ... Signal amplifier semiconductor chip, 103 ... Bonding wire, 104
… Infrared transparent resin, 105… Black resin, 106… Terminal,
107 ... Resin block.
Claims (3)
導体チップと、フォトダイオードの半導体チップに接続
されて、フォトダイオードの半導体チップからの信号の
特定周波数帯域を選択的に復調，増幅，波形整形する信
号増幅器の半導体チップと、フォトダイオードの半導体
チップと信号増幅器の半導体チップを赤外線透過性樹脂
で一体にモールドし、信号増幅器の半導体チップの周囲
を黒色樹脂部とした樹脂ブロックと、信号増幅器の半導
体チップに接続する３本以上の端子とにより構成された
ことを特徴とする赤外線ワイヤレス受信器。1. A semiconductor chip of a photodiode which reacts to infrared rays, and a signal which is connected to the semiconductor chip of the photodiode and selectively demodulates, amplifies and waveform-shapes a specific frequency band of a signal from the semiconductor chip of the photodiode. Amplifier semiconductor chip, photodiode semiconductor chip and signal amplifier semiconductor chip are integrally molded with infrared transparent resin, and resin block around the signal amplifier semiconductor chip is a black resin part, and signal amplifier semiconductor chip An infrared wireless receiver comprising three or more terminals connected to.
を赤外線透過性樹脂とし、かつフォトダイオードの半導
体チップと信号増幅器の半導体チップを黒色樹脂で一体
モールドとしたことを特徴とする請求項１記載の赤外線
ワイヤレス受信器。2. The infrared ray according to claim 1, wherein an upper part of the semiconductor chip of the photodiode is made of an infrared transparent resin, and the semiconductor chip of the photodiode and the semiconductor chip of the signal amplifier are integrally molded with a black resin. Wireless receiver.
赤外線透過性樹脂と、黒色樹脂との接合部の角度をフォ
トダイオードの半導体チップに対して任意の角度とした
ことを特徴とする請求項２記載の赤外線ワイヤレス受信
器。3. The photodiode according to claim 2, wherein the angle between the infrared transparent resin on the semiconductor chip upper part of the photodiode and the black resin is an arbitrary angle with respect to the semiconductor chip of the photodiode. Infrared wireless receiver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5311993A JPH07169983A (en) | 1993-12-13 | 1993-12-13 | Infrared wireless receiver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5311993A JPH07169983A (en) | 1993-12-13 | 1993-12-13 | Infrared wireless receiver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07169983A true JPH07169983A (en) | 1995-07-04 |
Family
ID=18023918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5311993A Pending JPH07169983A (en) | 1993-12-13 | 1993-12-13 | Infrared wireless receiver |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07169983A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100553959B1 (en) * | 2002-11-14 | 2006-02-20 | 주식회사원광전자 | Manufacture method of Remocon Receiver Module |
-
1993
- 1993-12-13 JP JP5311993A patent/JPH07169983A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100553959B1 (en) * | 2002-11-14 | 2006-02-20 | 주식회사원광전자 | Manufacture method of Remocon Receiver Module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7348551B2 (en) | Remote-control light receiving unit and electronic apparatus using the same | |
| US7979045B2 (en) | GNSS receiver package | |
| US5668383A (en) | Semiconductor device for bidirectional non-conducted optical data transmission | |
| JPH07169983A (en) | Infrared wireless receiver | |
| JP2000031511A (en) | Constituent part performing optical data transmission | |
| US7538437B2 (en) | Infrared receiver chip | |
| JPH0984162A (en) | Remote control light receiving unit | |
| US20060043277A1 (en) | Integrated ball grid array optical mouse sensor packaging | |
| US7844184B2 (en) | Remote control receiver and electronic equipment including the same | |
| JP2003101320A (en) | Semiconductor integrated circuit | |
| JP2004117216A (en) | Infrared detector | |
| JP2002319772A (en) | Closed unit | |
| JPH07135327A (en) | Light receiving unit | |
| JP2536478Y2 (en) | Infrared receiver | |
| KR100391067B1 (en) | Light-receiving device and electric equipment using the same | |
| JPS58199575A (en) | Photoelectric device | |
| JP2522185B2 (en) | IC package | |
| JP2576383Y2 (en) | Optical semiconductor device | |
| JP2590811B2 (en) | Electric circuit device | |
| JPH03270178A (en) | Infrared sensor | |
| JP2005235983A (en) | Sensor component | |
| JPH01200896A (en) | Receiver for remote controller | |
| JP2012094668A (en) | Light-receiving device and electronic apparatus | |
| JP2893616B2 (en) | Electronics | |
| CN100449575C (en) | Shielding method for infrared remote control receiving amplifier and infrared remote control receiving amplifying device thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S202 | Request for registration of non-exclusive licence |
Free format text: JAPANESE INTERMEDIATE CODE: R315201 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080906 Year of fee payment: 6 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080906 Year of fee payment: 6 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20080906 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20090906 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20100906 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R315531 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20100906 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20100906 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110906 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20120906 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20120906 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20130906 |
|
| EXPY | Cancellation because of completion of term |