JPH07153679A - Transmission-type multilayer film - Google Patents

Abstract

PURPOSE:To obtain a transmission-type multilayer film which has solved a drop in a reflection factor due to a drop in flatness and a drop in a transmissing due to a membrance and whose reflection factor and transmissivity are high. CONSTITUTION:A transmission-type multilayer film is provided with support bodies 3, 4 which have a transmission window 8 nearly in the center and with a multilayer film 6 which is supported by the support bodies. In the transmission-type multilayer film, the rear surface which comes into contact with the support bodies of the multilayer film 6 and the surface which does not come into contact with the support bodies are constituted respectively of platinum group metals.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transmissive multi-layer film for light in the vacuum ultraviolet to soft X-ray region having a wavelength of 200 nm or less.

[0002]

2. Description of the Related Art From vacuum ultraviolet rays having a wavelength of 200 nm or less to soft X
The light in the line region has a refractive index very close to 1 which is a vacuum value for most substances, and since there is large absorption, there is no transparent substance. Therefore, when a transmissive optical element used for visible light is to be manufactured, it is necessary to have a structure in which there is no support or substrate in the region where light is transmitted because a transparent substrate cannot be used. is there. Hereinafter, such a structure is referred to as free standing. The structure shown in FIGS. 12A to 12D is known as the structure of the transmission type multilayer film. The transmissive multilayer film of FIG. 12A is a transmissive multilayer film having a structure in which a silicon nitride film 112 is provided on a silicon substrate 111 having a transmissive window, and a multilayer film 113 is further provided thereon. 112 does not have a light transmission window and is not free standing. 12
The transmission type multilayer film of (b) is a transmission type multilayer film having a structure in which a membrane 115 of a silicon nitride film having a light transmission window is provided on a silicon substrate 114 having a transmission window, and a multilayer film 116 is provided thereon. It is a free-standing transmissive multilayer film. The transmissive multilayer film of FIG.
By the modification of (a), a transmissive multi-layer film having a structure in which a silicon nitride film membrane 118 is provided on a silicon substrate 117 having a transmissive window and a multi-layer film 119 is provided on the lower surface of the membrane of the transmissive window portion of the silicon substrate. , The membrane has no light transmission window and is not free standing. 12
The transmission type multilayer film of (d) has a structure in which a membrane 121 including two layers of a silicon oxide film and SiC is provided on a silicon substrate 120 having a transmission window, and a multilayer film 122 is provided thereon. Therefore, the membrane 121 does not have a light transmission window and is not free standing. In such a conventional transmissive multi-layer film, a membrane is usually made of a silicide such as SiN, a boride such as BN, and diamond. Further, Mo is usually used as the heavy element layer of the multilayer film, and Si is usually used as the light element layer.

A method shown in FIG. 13 is known as one of the methods for producing such a transmission type multilayer film. In this method, after forming a multilayer film on an organic thin film, the underlying organic thin film is dissolved with an organic solvent (a), and the multilayer film is scooped with a support (b) to make the multilayer film free-standing. Method (H. Nomura et al., Proc. SPIEVo
l. 1720 (1992) p395). Hereinafter, it is abbreviated as a scooping method. In the scooping method, since wrinkles are more likely to occur on the reflecting surface, wrinkles are extended using the organic solvent after scooping as shown in FIG.

As another method for producing a transmissive multilayer film,
The method shown in FIG. 14 is known. This method is a method of forming a multilayer film on a membrane used as a mask for X-ray exposure (Andrew M Hawryluk et al., J. Vac. Sc).
i. Technol. B, Vol. 6 (1988) p2153). A nitride film is formed on both surfaces of the silicon substrate (a), and the nitride film on the back surface where light is transmitted is removed (b). Then, after removing silicon by wet etching with KOH or the like (c), a multilayer film is formed on the nitride film on the surface to form a multilayer film. At this time, a method of forming a multilayer film before removing the nitride film on the back surface is also known. This method can manufacture an element having a large opening as compared with the scooping method using a mesh, and has a large margin for the internal stress of the multilayer film. Hereinafter, it is abbreviated as an etch back method.

[0005]

Problems to be Solved by the Invention FIGS. 12 (a) and 12 (c)
In the structure of FIG. 12 (d), the film thickness of the membrane is usually required to be several tens to several hundreds nm, so that the intensity of transmitted light is significantly reduced due to absorption by the membrane, and sufficient transmittance is obtained. There is a problem that you can not. Also, FIG.
When the membrane is simply removed as in the structure of 2 (b), there is a problem that after the removal, the stress of the multilayer film is not balanced and wrinkles or cracks are formed. Also,
Since the multilayer film is made of a material having a small dry etching resistance such as Mo / Si, there is a problem that the multilayer film is damaged when the membrane is removed by dry etching and the reflectance is lowered. Further, in order to maintain the flatness of the transmission type multilayer film, it is necessary to control the internal stress of the multilayer film itself to 0 or a weak tensile stress, but controlling the stress causes a decrease in reflectance and the like. In such a case, the internal stress of the multilayer film itself cannot be controlled and becomes a compressive stress, and the problem that the flatness of the transmissive multilayer film is impaired due to wrinkles due to residual stress, and When the internal stress is a tensile stress, the flatness is maintained, but the transmissive multilayer film may be damaged due to cracks or the like. "Scooping up method"
In the transmissive multilayer film manufactured in step 1, there is a problem that when the multilayer film is peeled from the underlayer, internal stress of the multilayer film causes wrinkles or cracks in the peeled multilayer film. Furthermore, when a mesh is used for the support, there are problems such as a decrease in transmittance due to the mesh and disturbance of the reflecting surface due to wrinkles, and when a ring opening is used for the support, there are problems such as restriction of the opening area. is there. The present invention has been made in view of the above-mentioned conventional problems, and the purpose thereof is to:
It is an object of the present invention to provide a transmissive multilayer film having high reflectance and high transmittance, which solves the lowering of reflectance due to the lowering of flatness and the lowering of transmittance due to a membrane.

[0006]

In order to solve the above problems, the transmission type multilayer film according to the first invention is a transmission type multilayer film having a support and a multilayer film, and is in contact with the support of the multilayer film. The layer is composed of a white metal element, and the light transmission part is composed of only a multilayer film. Further, the transmissive multilayer film according to the second invention is a transmissive multilayer film having a support and a multilayer film, wherein a layer of the multilayer film in contact with the support is made of a white metal element, and a light transmitting portion is a multilayer film. A film having a window for light transmission and having a residual stress of the same property as that of the multilayer film, the surface of the support on the side opposite to the multilayer film and the support being opposite to each other. It is provided on either one of the surfaces of the multilayer film on the side. Furthermore, the transmissive multilayer film according to the third aspect of the present invention is a transmissive multilayer film having a support and a multilayer film, wherein a layer of the multilayer film in contact with the support is made of a white metal element, and a light transmitting portion is a multilayer film. Further, a film having a window for light transmission and having a residual stress having a property opposite to that of the multilayer film is provided between the multilayer film and the support.

[0007]

In the first aspect of the invention, since the layer of the multilayer film in contact with the support is made of a white metal element having high dry etching resistance, the membrane can be removed without damaging the multilayer film. As a result, a free-standing transmissive multilayer film having high reflectance without scattering of reflected light can be realized. In addition to this, in the second invention, a stress relaxation film having a residual stress having the same property as that of the multilayer film is provided on the surface of the support opposite to the multilayer film or on the surface of the multilayer film opposite to the support. By providing, and in the third invention, by providing a stress relaxation film having a residual stress having a property opposite to that of the multilayer film between the multilayer film and the support,
The residual stress of the multilayer film can be relaxed. As a result, a free-standing transmissive multilayer film having both high reflectance and high transmittance can be realized. As described above, in the second invention, in order to reduce the influence of the internal stress of the multilayer film,
A stress relaxation film is provided to control the stress of the multilayer film, prevent wrinkles and cracks in the multilayer film after membrane removal, and maintain excellent flatness. The second invention is different from the prior art in that the stress relieving film is not formed as a membrane, but the transmitting portion is merely a free standing of a multilayer film, and high transmittance and high reflectance are realized at the same time.

[0008]

FIG. 1 is a diagram for explaining a first embodiment of the present invention. The transmissive multilayer film is composed of the multilayer film 6, the membrane 3 made of SiN, and the silicon substrate 4. Of these, the multilayer film 6 is composed of 1 Ru and 2 Si, and
Ru is arranged on both sides of the multilayer film 6 as in Si /.../ Si / Ru. With this structure, since Ru has high dry etching resistance to CF ₄ , CF ₄ + H ₂ , or CF ₄ + H ₂ + N ₂ , which are etching gases for the nitride film, the multilayer film is less likely to be damaged when the membrane is etched. Become. At this time, if the layers on both sides are made of Ru, a Mo / Si multilayer film may be formed. In this case, it can be produced at a lower cost than a multi-layer film made entirely of Ru. The constituent material of the membrane 3 is SiN in this example.
However, other silicon compounds such as SiC may be used.
As described above, Ru / Si /.../ Si is used by using Ru having high dry etching resistance as one of the constituent materials of the multilayer film.
Since Ru is arranged on both sides like / Ru, the membrane can be removed by dry etching without damaging the multilayer film. As a result, a transmissive multilayer film having high reflectance without scattering of reflected light is obtained.

Next, a method of manufacturing such a transmission type multilayer film will be described in detail with reference to FIG. CVD on both sides of Si substrate 4
Method (CVD: Chemical Vapor Deposition) or EC
R-CVD method (ECR: Electron Cyclotron Resonanc
By e), a silicon compound 3 such as SiN or SiC is deposited (b). Next, the resist 5 is applied to the back surface (c),
A portion corresponding to the light transmitting window is exposed and developed to form a resist pattern (d). For the exposure, light exposure or EB exposure that is usually used in the LSI manufacturing process is used. Then, using the resist pattern 5 as a mask, CF ₄ , CF ₄
+ H _2, or CF ₄ + H ₂ + by dry etching a halogen gas as a main etching gas such as N _2, a silicon compound 3 is removed by etching (e). Furthermore, S
The i substrate 4 is removed by wet etching to form a membrane substrate (f). Here, the wet etching is performed with an etching solution such as KOH or amine. Next, Ru1 and Si2 are alternately deposited on the membrane substrate to form the multilayer film 6 (g). Finally, the membrane 7 is removed by dry etching to form the transmission window 8 (h). The etching gas at this time is CF ₄ ,
CF ₄ + H _2, or CF ₄ + H ₂ + a halogen gas such as N ₂ is used mainly as the etching gas.

FIG. 3 is a diagram showing another method for producing a transmissive multilayer film. Steps (a) to (e) are the same as (a) to (e) in FIG. In this way, the multilayer film 6 is laminated before back etching the substrate 4 with the window opened (f), after which the substrate 4 is removed by wet etching using an etchant of KOH or amine (g), and finally. Membrane 7
Alternatively, the process (h) of forming the transmission window 8 by dry etching may be performed. In this case, since the step of back-etching the Si substrate is performed before the multi-layer film is manufactured, damage to the multi-layer film due to the back-etch etchant can be prevented, and the margin for the stress control range of the membrane alone is large. There is. In other words, since there is no process for freestanding the membrane alone,
It can be applied even when the membrane has compressive stress. The internal stress of the multilayer film is several M in conventional magnetron sputtering.
It was a relatively strong compressive stress of about Pa to 1 GPa,
In the present invention, the production conditions of the multilayer film such as the gas pressure, the substrate temperature, and the film formation rate are optimized to reduce the pressure to several tens MPa or less. Therefore, even if the membrane is completely removed by etching, wrinkles may occur due to the internal stress of the multilayer film,
It is possible to make it free standing because it does not crack. The above manufacturing process is suitable for mass production because it can be easily manufactured at low cost because there are no special steps, and the semiconductor manufacturing process can be used as it is.

FIG. 4 shows a second embodiment of the present invention. 1, 2, 3, and 4 are the same as the materials described in FIG. 1, and are transmission type multilayer films having a structure having the stress relaxation film 7 on the back surface of the substrate. In this embodiment, the residual stress of the multilayer film 6 is a compressive stress, and the compressive stress of the multilayer film 6 is canceled by the compressive stress of the stress relaxation film 7 to relieve the stress and flatness of the transmissive multilayer film. Hold. As a result, the transmissive multilayer film has both high reflectance and high transmittance without impairing the reflectance and the transmittance. As the stress relaxation film 7, SiC, SiO ₂ ,
A silicon compound such as SiN is used.

FIG. 5 is a diagram for explaining a method of manufacturing the transmission type multilayer film of FIG. CVD or EC on both sides of the Si substrate 4
A silicon compound 3 such as SiN or SiC is deposited by the R-CVD method (b). Next, the stress relaxation film 7 having a compressive stress is formed on the silicon compound 3 formed on the back surface of the substrate 4 by the sputtering method or the vapor deposition method (e). The substrate 4 warps in a concave shape due to the compressive stress of the stress relaxation film 7. After that, a resist 5 is applied on the stress relaxation film 7 (d), and a portion corresponding to the light transmission window is exposed and developed to form a resist pattern (c). For the exposure, a method usually used in the LSI manufacturing process such as light exposure or EB exposure is used.
After that, using the resist pattern 5 as a mask, CF ₄ , C
By dry etching using a halogen gas such as F ₄ + H ₂ or CF ₄ + H ₂ + N ₂ as a main etching gas,
The stress relaxation film 7 is removed by etching (f), and then a part of the silicon compound 3 is removed by etching (g). Furthermore, the Si substrate 4 is removed by wet etching,
Create a membrane substrate (h). Here, the wet etching is performed with an etching solution such as KOH or amine. Next, Ru1 and Si2 are alternately deposited on the membrane substrate to stack the multilayer film 6 (i). By laminating the multilayer films, the warp of the substrate 4 is restored by the internal stress of the multilayer films themselves. Therefore, the compressive stress of the multilayer film is relaxed, and a flat multilayer film can be obtained. Finally, a transparent window is formed on the membrane 7 by dry etching (j). As the etching gas at this time, an etching gas mainly containing a halogen gas such as CF ₄ , CF ₄ + H ₂ , or CF ₄ + H ₂ + N ₂ is used. Also in this embodiment, the multilayer film laminating step (i) may be performed before the substrate back-etching step (h). In this case, since the step of back-etching the Si substrate is performed before the multi-layer film is manufactured, damage to the multi-layer film due to the back-etch etchant can be prevented, and the margin for the stress control range of the single membrane is large. There is. That is, since there is no process for freestanding the membrane alone, it can be applied even when the membrane has compressive stress.

FIG. 6 is a diagram showing a third embodiment of the present invention. 1, 2, 3, and 4 in the figure are the same as the materials described in FIG. In this embodiment, the residual stress of the multilayer film 6 is a strong tensile stress. In the second embodiment, the stress relaxation film 7 is provided on the back surface of the substrate, but in this embodiment, the stress relaxation film 7 is provided on the multilayer film. The tensile stress of the multilayer film 6 is relaxed by the tensile stress of the stress relaxation film 7. As the stress relaxation film 7, a silicon compound such as SiC, SiO ₂ or SiN is used.

FIG. 7 is a diagram for explaining a method of manufacturing the transmission type multilayer film shown in FIG. A silicon compound 3 such as SiN or SiC is deposited on both surfaces of the Si substrate 4 by the CVD method or the ECR-CVD method (b). Next, a resist 5 is applied on the silicon compound 3 formed on the back surface of the substrate 4 (c), and a portion corresponding to the light transmission window is exposed and developed to form a resist pattern (d). For the exposure, a method usually used in the LSI manufacturing process such as light exposure or EB exposure is used.
After that, using the resist pattern 5 as a mask, CF ₄ , C
By dry etching using a halogen gas such as F ₄ + H ₂ or CF ₄ + H ₂ + N ₂ as a main etching gas,
A part of the silicon compound 3 is removed (e). Next, Ru1 and Si2 are alternately deposited on the silicon compound 3 formed on the surface to form the multilayer film 6 (f). The substrate 4 warps concavely due to the tensile stress of the multilayer film 6. Furthermore, the multilayer film 6
A stress relaxation film 7 having a tensile stress is formed on the surface of the substrate by a sputtering method or a vapor deposition method (g). Then, the substrate 4 is further warped due to the tensile stress of the stress relaxation film 7, and as a result, the tensile stress of the multilayer film in the window portion is relaxed. Therefore, it is possible to prevent damage due to cracks in free standing. After that, a resist 5 is applied on the stress relaxation film 7 and a portion corresponding to the light transmission window is exposed and developed to form a resist pattern (h). Thereafter, the stress relaxation film 7 in the window portion is removed by dry etching using the resist pattern as a mask (i), and the Si substrate 4
Are removed by wet etching (j). here,
Wet etching is performed with an etchant such as KOH or amine. Finally, the silicon compound 3 in the window portion is removed by dry etching (k). The etching gas used at this time is CF ₄ , CF ₄ + H ₂ , or CF.
An etching gas mainly containing a halogen gas such as ₄ + H ₂ + N ₂ is used. Also in this embodiment, the multilayer film laminating step (i) may be performed after the substrate back-etching step (j).

FIG. 8 is a diagram showing a fourth embodiment of the present invention. 1, 2, 3, and 4 in the figure show the same materials as those explained in FIG. In this embodiment, the multilayer film 6 and the nitride film 3 are used.
A structure having a stress relaxation film 7 between and. With this structure, when the residual stress of the multilayer film 6 is a compressive stress, the residual stress of the stress relaxation film 7 is used as a tensile stress to relax the stress and maintain the flatness of the transmissive multilayer film. On the other hand, when the residual stress of the multilayer film 6 is a strong tensile stress, the residual stress of the stress relaxation film 7 is set to a compressive stress to relax the stress and prevent damage such as cracks in the transmissive multilayer film. You can As the stress relaxation film 7, SiC,
A silicon compound such as SiO ₂ or SiN is used.

FIG. 9 is a diagram for explaining a method of manufacturing the transmission type multilayer film shown in FIG. Both sides of the Si substrate 4 are subjected to the CVD method or E
A silicon compound 3 such as SiN or SiC is deposited by the CR-CVD method (b). Next, the stress relaxation film 7 is formed on the silicon compound 3 formed on the surface of the substrate 4 by the sputtering method or the vapor deposition method (c). After that, a resist 5 is applied on the silicon compound 3 formed on the back surface of the substrate 4 (d), and a portion corresponding to the light transmission window is exposed and developed to form a resist pattern (e). For the exposure, a method usually used in the LSI manufacturing process such as light exposure or EB exposure is used. After that, using the resist pattern 5 as a mask,
A part of the silicon compound 3 is removed by dry etching using a halogen gas such as CF ₄ , CF ₄ + H ₂ , or CF ₄ + H ₂ + N ₂ as a main etching gas (f). Further, the Si substrate 4 is removed by wet etching to form a membrane substrate (g). Here, the wet etching is performed with an etching solution such as KOH or amine. Next, Ru1 and Si2 are alternately deposited on the stress relaxation film 7 to form the multilayer film 6 (h). Finally, the silicon compound 3 in the window portion is removed by dry etching (i), and then the stress relaxation film 7 in the window portion is removed (j). The etching gas at this time is CF ₄ , C
An etching gas mainly containing a halogen gas such as F ₄ + H ₂ or CF ₄ + H ₂ + N ₂ is used. Also in this embodiment, the multilayer film stacking step (h) may be performed before the substrate back-etching step (g).

FIG. 10 is a diagram showing a fifth embodiment of the present invention. 1, 2, 3, and 4 in the figure show the same materials as those explained in FIG. In this embodiment, the substrate 4 and the nitride film 3 are used.
And has a stress relaxation film 7 between and. This structure basically has the same effect as the structure of the fourth embodiment, but when the multilayer film is laminated on the nitride film having relatively small surface roughness, it is difficult to reduce the surface roughness of the stress relaxation film. Suitable. As the stress relaxation film 7, a silicon compound such as SiC, SiO ₂ or SiN is used.

FIG. 11 is a diagram for explaining a method of manufacturing the transmission type multilayer film shown in FIG. The stress relaxation film 7 is formed on the surface of the Si substrate 4.
Is formed by a sputtering method or a vapor deposition method (b). After that, S is applied to both sides by the CVD method or the ECR-CVD method.
A silicon compound 3 such as iN or SiC is deposited (c). Next, a resist 5 is applied on the silicon compound 3 formed on the back surface of the substrate 4 (d), and a portion corresponding to the light transmission window is exposed and developed to form a resist pattern (e). For the exposure, a method usually used in the LSI manufacturing process such as light exposure or EB exposure is used. After that, CF ₄ , CF ₄ + H ₂ , or C is used with the resist pattern as a mask.
Part of the silicon compound 3 is removed by dry etching using a halogen gas such as F ₄ + H ₂ + N ₂ as a main etching gas (f). Further, the Si substrate 4 is removed by wet etching (g). Here, the wet etching is performed with an etching solution such as KOH or amine. Further, the stress relaxation film in the window portion is removed by dry etching to form a membrane substrate (h). next,
Ru1 and Si2 are alternately deposited on the silicon compound 3 to form the multilayer film 6 (i). Finally silicon compound 3 in the window
Are removed by dry etching (j). As the etching gas at this time, an etching gas mainly containing a halogen gas such as CF ₄ , CF ₄ + H ₂ , or CF ₄ + H ₂ + N ₂ is used. Also in this embodiment, the multilayer film laminating step (i) may be performed before the substrate back-etching step (g).

In the above embodiments, R is used as the heavy element of the multilayer film.
u / and Ru / Si /
The structure starts with Ru and ends with Ru like Ru /.../ Si / Ru. Further, even if only the layers on both ends are made of Ru and Mo is used for the intermediate heavy metal layer, the effect of the present invention is not impaired, and it can be produced at low cost. As described above, Ru is used as the constituent element of the multilayer film because it has been experimentally known that Ru has a high etching resistance with a halogen gas such as CF ₄ . Therefore, Ru, which is also considered to have high etching resistance against halogen gas such as CF _4, is also considered.
Other white metal elements (Ru, Pd, Os, Ir, Pt)
Needless to say, the same effect can be obtained by using as a heavy metal element of a multilayer film or as a layer at both ends. Also,
Magnetron sputtering, ion beam sputtering, EB vapor deposition, CVD, ECR sputtering or the like can be used for forming the multilayer film. Further, the formation of a silicon compound such as SiN or SiC can be performed by a sputtering method or the like in addition to CVD. In particular, the ECR-CVD method is suitable because it can form a film having good smoothness and very small residual stress at a low temperature without heating the substrate.

[0020]

The transmissive multilayer film of the present invention has a high reflectance because of its high transmittance and excellent flatness. Therefore, it can be applied as an X-ray optical element such as a beam splitter and a power filter. Further, the transmission type multilayer film of the present invention is used as a polarizer, an analyzer and the like to constitute an X-ray ellipsometer, which can be applied as an atomic order analyzer. Further, if it is used as a coherent X-ray beam splitter, it can be applied to X-ray holography by interferometer, two-beam interference or the like. Furthermore, the fabrication process of the present invention is an application of the semiconductor fabrication process and is suitable for mass production.

[Brief description of drawings]

FIG. 1 is a diagram showing a structure of a first embodiment of a transmission type multilayer film of the present invention.

FIG. 2 is a diagram illustrating a manufacturing process of the transmission type multilayer film of the first embodiment, and (a) to (h) show each process.

FIG. 3 is another manufacturing process of the first embodiment.
(H) shows each process.

FIG. 4 is a diagram showing a structure of a second embodiment of the transmission type multilayer film of the present invention.

FIG. 5 is a diagram for explaining the manufacturing process of the transmission type multilayer film of the second embodiment, in which (a) to (j) show each process.

FIG. 6 is a diagram showing the structure of a third embodiment of the transmission type multilayer film of the present invention.

FIG. 7 is a diagram for explaining the manufacturing process of the transmission type multilayer film of the third embodiment, and (a) to (k) show each process.

FIG. 8 is a diagram showing the structure of a fourth embodiment of the transmission type multilayer film of the present invention.

FIG. 9 is a view for explaining the manufacturing process of the transmission type multilayer film of the fourth embodiment, in which (a) to (j) show each process.

FIG. 10 is a diagram showing the structure of a fifth embodiment of the transmission type multilayer film of the present invention.

FIG. 11 is a view for explaining the manufacturing process of the transmission type multilayer film of the fifth embodiment, and (a) to (j) show each process.

FIG. 12 is a view showing a structure of a conventional transmission type multilayer film,
(A) to (d) show different structures.

FIG. 13 is a diagram illustrating an example of a conventional process for manufacturing a transmissive multilayer film, in which (a) to (c) show each process.

FIG. 14 is a diagram showing an example of a manufacturing process of a conventional transmission type multilayer film, and (a) to (d) show each process.

[Explanation of symbols]

 1 white metal element layer such as Ru 2 light element layer 3 membrane 4 silicon substrate 5 resist 6 multilayer film 7 stress relaxation film 111 silicon substrate 114 silicon substrate 117 silicon substrate 120 silicon substrate 112 membrane 115 membrane 118 membrane 121 membrane 113 multilayer film 116 Multilayer film 119 Multilayer film 122 Multilayer film

Claims (3)

[Claims] 1. In a transmission type multilayer film comprising a support having a transmission window and a multilayer film provided on the support, a lower surface of the multilayer film which is in contact with the support and an upper surface which is not in contact with the support are white metal. A transmissive multi-layer film comprising an element. 2. A stress relaxation film having a residual stress having the same property as that of the multilayer film is provided on either the upper surface of the multilayer film or the lower surface of the support which is not in contact with the multilayer film. The transmissive multilayer film according to claim 1. 3. The transmissive multilayer film according to claim 1, wherein a stress relaxation film having a residual stress having a property opposite to that of the multilayer film is provided between the multilayer film and the support. .