JPH07153027A - Thin film magnetic head and its manufacture - Google Patents
Thin film magnetic head and its manufactureInfo
- Publication number
- JPH07153027A JPH07153027A JP29514193A JP29514193A JPH07153027A JP H07153027 A JPH07153027 A JP H07153027A JP 29514193 A JP29514193 A JP 29514193A JP 29514193 A JP29514193 A JP 29514193A JP H07153027 A JPH07153027 A JP H07153027A
- Authority
- JP
- Japan
- Prior art keywords
- film
- terminal
- magnetic head
- metal terminal
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は超高密度記録が可能なハ
ードディスクドライブ装置に使用される薄膜磁気ヘッド
及びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head used in a hard disk drive capable of ultra high density recording and a method for manufacturing the same.
【0002】[0002]
【従来の技術】近年、薄膜磁気ヘッドにおいては、磁気
ヘッド素子部を構成するコイル層の積層化がすすみ、そ
のために金属端子、例えば金,白金,銀,銅等の膜厚も
厚くする必要があり、各種の金属端子形成方法が開発さ
れている。2. Description of the Related Art In recent years, in thin film magnetic heads, the lamination of coil layers constituting the magnetic head element portion has progressed, and for this reason, it is necessary to increase the thickness of metal terminals such as gold, platinum, silver and copper. Therefore, various metal terminal forming methods have been developed.
【0003】従来、薄膜磁気ヘッドの金属端子形成工程
は、電解メッキ法にてレジスト膜に覆われていない部分
に選択的に、メッキ成膜する方法が一般的である。しか
し、レジスト膜厚にも限界があり、例えば、レジスト膜
厚を越える銅端子メッキでは、レジスト膜厚を越えたと
ころからオーバーハングして銅端子が形成されるため
に、この銅端子上にアルミナ保護膜をスパッタ成膜する
際に、スパッタ成膜のカバーレージが悪く、保護膜平坦
化ラップ加工後に、銅端子の周辺のスパッタ成膜むらの
部分に溝が生じ、薄膜磁気ヘッドの完成品において、銅
端子周辺から金属腐食が発生し易く耐久性や信頼性に欠
けるという問題点があった。Conventionally, the metal terminal forming process of a thin film magnetic head has generally been a method of selectively forming a film by plating on a portion not covered with a resist film by an electrolytic plating method. However, there is a limit to the resist film thickness. For example, in copper terminal plating that exceeds the resist film thickness, the copper terminal is formed overhanging beyond the resist film thickness. When the protective film is formed by sputtering, the coverage of the sputtering film is poor, and after flattening the protective film, a groove is created in the area around the copper terminal where the sputtering film is uneven. However, there is a problem that metal corrosion easily occurs around the copper terminals and durability and reliability are poor.
【0004】そこで、上記問題点を解決するためにレジ
スト膜厚と略同じ膜厚まで金属端子メッキを行った後、
この金属端子上にこれよりも大面積の金属端子パターン
を重ねて形成することでレジスト膜厚よりも厚い金属端
子を形成する金属端子形成方法が知られている。Therefore, in order to solve the above problems, after metal terminal plating is performed to a film thickness approximately the same as the resist film thickness,
There is known a metal terminal forming method in which a metal terminal pattern having a larger area than that of the metal terminal is overlapped and formed on the metal terminal to form a metal terminal thicker than the resist film thickness.
【0005】以下従来の薄膜磁気ヘッドについて説明す
る。図5は従来の薄膜磁気ヘッドの銅端子部分の要部断
面図である。1は磁気ヘッド素子部(図示せず)が形成
済みの基板、2は基板1上に積層された磁気ヘッド素子
部と導通する引き出し端子、3は金属端子メッキ用下地
電極膜、7は電解メッキ法により形成された内部銅端
子、9は内部銅端子7上に電解メッキ法で形成された大
面積の外部銅端子、10は内部銅端子7上に外部銅端子
9を積層して肉厚に形成された銅端子、11は外部銅端
子9上にスパッタ成膜されたアルミナ保護膜に保護膜平
坦化ラップ加工されたアルミナ保護膜である。A conventional thin film magnetic head will be described below. FIG. 5 is a cross-sectional view of an essential part of a copper terminal portion of a conventional thin film magnetic head. Reference numeral 1 is a substrate on which a magnetic head element portion (not shown) is formed, 2 is a lead terminal which is electrically connected to the magnetic head element portion laminated on the substrate 1, 3 is a base electrode film for metal terminal plating, and 7 is electrolytic plating Inner copper terminal formed by the method, 9 is a large area outer copper terminal formed by electrolytic plating on the inner copper terminal 7, and 10 is a thick wall formed by laminating the outer copper terminal 9 on the inner copper terminal 7. The formed copper terminal 11 is an alumina protective film obtained by laminating a protective film flattened on the alumina protective film formed by sputtering on the external copper terminal 9.
【0006】以上のように構成された薄膜磁気ヘッドに
ついて、以下その製造方法を説明する。図6(a)乃至
図8(c)は従来の薄膜磁気ヘッドの銅端子形成工程を
示す要部断面図である。4は内部銅端子7を形成するた
めに一時的に内部銅端子パターン5を形成するためのレ
ジスト膜、6は外部銅端子9を形成するために一時的に
外部銅端子パターン8を形成するためのレジスト膜であ
る。まず、図6(a)に示すように基板1上に形成済の
磁気ヘッド素子部と導通する引き出し端子2の表面に金
属端子メッキ用下地電極膜3をスパッタ成膜する。次に
金属端子メッキ用下地電極膜3の上にポジタイプのレジ
スト膜4をコーティングし、所定の熱処理を加えた後、
露光・現像した後、純水洗浄をして図6(b)に示すよ
うに内部銅端子パターン5を形成する。続いて内部銅端
子パターン5よりも大面積の外部銅端子9を形成するた
めの外部銅端子パターン8を、内部銅端子パターン5が
外部銅端子パターン8内の中央に位置するようにレジス
ト膜6の部分について露光のみを行う。その後、金属端
子メッキ用下地電極膜3の露出している内部銅端子パタ
ーン5の部分に電解メッキ法にて図6(c)に示すよう
に内部銅端子7を形成する。次に、前工程で露光済のレ
ジスト膜6を現像した後、純水洗浄をして図7(a)に
示すように金属端子メッキ用下地電極膜3及び内部銅端
子7を露出させ外部銅端子パターン8を形成する。次
に、この露出した金属端子メッキ用下地電極膜3及び内
部銅端子7のメッキ膜面に電解メッキ法にて外部銅端子
9の形成を行う。このとき外部銅端子9の膜厚はレジス
ト膜4の膜厚よりも薄いためにレジスト膜4を乗り越え
てオーバーハングすることはない。また、内部銅端子7
上では外部銅端子9の膜厚を重ね合わせることになり、
図7(b)に示すようにレジスト膜4よりも厚い銅端子
がメッキできることになる。次に、図7(c)に示すよ
うにレジスト膜4を全面露光にて除去した後、ケミカル
エッチングにより露出している金属端子メッキ用下地電
極膜3の不要部分を除去して、図8(a)に示すように
略台形状の内部銅端子7と外部銅端子9からなる銅端子
10が形成される。次に図8(b)に示すようにアルミ
ナ保護膜11をスパッタ成膜を行う。この際、銅端子1
0が略台形状をしているためにスパッタ成膜のカバーレ
ージがよくなり、銅端子10の周辺に空洞が生じること
はない。次に、図8(c)に示すように保護膜平坦化ラ
ップ加工を行い外部銅端子9を露出させて銅端子10を
形成する。A method of manufacturing the thin film magnetic head having the above structure will be described below. 6 (a) to 8 (c) are cross-sectional views of a main part showing a step of forming a copper terminal of a conventional thin film magnetic head. Reference numeral 4 denotes a resist film for temporarily forming the internal copper terminal pattern 5 to form the internal copper terminal 7, and 6 denotes temporarily forming the external copper terminal pattern 8 to form the external copper terminal 9. Of the resist film. First, as shown in FIG. 6A, a metal terminal plating base electrode film 3 is sputter-deposited on the surface of the lead terminal 2 which is electrically connected to the magnetic head element portion formed on the substrate 1. Next, a positive type resist film 4 is coated on the base electrode film 3 for metal terminal plating, and after a predetermined heat treatment is applied,
After exposure and development, washing with pure water is performed to form an internal copper terminal pattern 5 as shown in FIG. 6 (b). Subsequently, an external copper terminal pattern 8 for forming an external copper terminal 9 having a larger area than the internal copper terminal pattern 5 is provided so that the internal copper terminal pattern 5 is located in the center of the external copper terminal pattern 8. Only the exposure is performed for the part of. Then, an internal copper terminal 7 is formed on the exposed portion of the internal copper terminal pattern 5 of the metal terminal plating base electrode film 3 by electrolytic plating as shown in FIG. 6C. Next, after developing the exposed resist film 6 in the previous step, washing with pure water is performed to expose the base electrode film 3 for metal terminal plating and the internal copper terminals 7 to expose the external copper as shown in FIG. 7A. The terminal pattern 8 is formed. Next, the external copper terminals 9 are formed on the exposed plating film surfaces of the metal terminal plating base electrode film 3 and the internal copper terminals 7 by electrolytic plating. At this time, since the film thickness of the external copper terminal 9 is thinner than the film thickness of the resist film 4, it does not overhang the resist film 4 to overhang. Also, the internal copper terminal 7
In the above, the film thicknesses of the external copper terminals 9 are overlapped,
As shown in FIG. 7B, a copper terminal thicker than the resist film 4 can be plated. Next, as shown in FIG. 7C, after the resist film 4 is removed by whole surface exposure, unnecessary portions of the metal terminal plating base electrode film 3 exposed by chemical etching are removed, and as shown in FIG. As shown in a), a copper terminal 10 is formed which is composed of a substantially trapezoidal inner copper terminal 7 and an outer copper terminal 9. Next, as shown in FIG. 8B, an alumina protective film 11 is formed by sputtering. At this time, copper terminal 1
Since 0 has a substantially trapezoidal shape, the coverage of sputter film formation is improved, and no cavity is formed around the copper terminal 10. Next, as shown in FIG. 8C, a protective film flattening lapping process is performed to expose the external copper terminals 9 to form the copper terminals 10.
【0007】[0007]
【発明が解決しようとする課題】しかしながら上記従来
の構成では、内部銅端子及び外部銅端子を電解メッキ法
にて形成しており、例えば、3インチ基板に膜厚60ミ
クロンの銅端子を形成する場合陰極電流密度4A/dm
2で1基板当たり60分を要するなどメッキ処理時間が
長くかかっていた。また、通常の適正陰極電流密度は5
A/dm2〜1A/dm2の範囲であり、大電流を流して
メッキ処理時間を短縮するにも限界があり、生産性に欠
けるという問題点を有していた。また、電解メッキ法で
は枚葉処理のために生産性を上げるにはメッキ槽を増や
す必要があり電源等の設備コストがかかるという問題点
もあった。However, in the above conventional structure, the internal copper terminal and the external copper terminal are formed by the electrolytic plating method, and for example, the copper terminal having a film thickness of 60 microns is formed on the 3-inch substrate. Case cathode current density 4A / dm
In the case of 2, it took 60 minutes per substrate, and the plating process took a long time. The normal proper cathode current density is 5
In the range of A / dm 2 ~1A / dm 2 , there is a limit in shortening the plating time by flowing a large current, there is a problem of lack in productivity. Further, in the electrolytic plating method, there is a problem in that it is necessary to increase the number of plating tanks in order to increase the productivity for single-wafer processing, which requires equipment costs such as a power source.
【0008】本発明は上記従来の問題点を解決するもの
で、金属端子の膜厚を厚くしても金属端子周辺から金属
腐食等の発生しない高品質で信頼性の高い薄膜磁気ヘッ
ドの提供、及び短時間で膜厚の厚い金属端子を形成でき
低原価で生産性に優れた薄膜磁気ヘッドの製造方法を提
供することを目的とする。The present invention solves the above-mentioned problems of the prior art by providing a high quality and highly reliable thin film magnetic head in which metal corrosion does not occur around the metal terminals even if the film thickness of the metal terminals is increased. Another object of the present invention is to provide a method of manufacturing a thin film magnetic head which can form a metal terminal having a large film thickness in a short time and is excellent in productivity at low cost.
【0009】[0009]
【課題を解決するための手段】この目的を達成するため
に本発明の請求項1に記載の薄膜磁気ヘッドは、引き出
し端子上に積層形成された金属端子の肉厚部を構成する
レジスト膜と、前記レジスト膜上に被着積層された金属
端子メッキ用下地電極膜と、前記金属端子メッキ用下地
電極膜上にメッキ成膜された金属端子と、を備えた構成
を有しており、請求項2に記載の薄膜磁気ヘッドの製造
方法は、金属端子を有する薄膜磁気ヘッドの製造方法で
あって、前記金属端子の肉厚部を構成するレジスト膜を
形成するレジスト膜形成工程と、前記レジスト膜上に金
属端子メッキ用下地電極膜を被着積層する金属端子メッ
キ用下地電極膜形成工程と、前記金属端子メッキ用下地
電極膜上に金属端子をメッキ成膜する金属端子形成工程
と、を備えた構成を有している。To achieve this object, a thin film magnetic head according to claim 1 of the present invention comprises a resist film forming a thick portion of a metal terminal laminated on a lead terminal. A metal terminal-plating base electrode film deposited and laminated on the resist film, and a metal terminal plated on the metal terminal-plating base electrode film. Item 2. The method of manufacturing a thin-film magnetic head according to Item 2, which is a method of manufacturing a thin-film magnetic head having a metal terminal, including a resist film forming step of forming a resist film forming a thick portion of the metal terminal, and the resist. A metal terminal plating base electrode film forming step of depositing and laminating a metal terminal plating base electrode film on the film; and a metal terminal forming step of plating and forming a metal terminal on the metal terminal plating base electrode film. Prepared configuration It has.
【0010】ここで、金属端子としては、銅端子が一般
的であるが、この他に金端子,銀端子,白金端子等であ
ってもよい。この金属端子が端子形状をしたレジスト膜
を包み込むように積層覆設することによりレジスト膜と
一体になった肉厚の金属端子を形成することができる。
また、金属端子の肉厚部を形成するレジスト膜の形成は
金属端子形成時に単独に形成してもよいが、磁気ヘッド
素子部を構成するレジスト膜絶縁層を形成する際に段階
的に積み上げて形成してもよい。この方が銅端子形成時
間をより短縮することができる。Copper terminals are generally used as metal terminals, but gold terminals, silver terminals, platinum terminals and the like may be used. By stacking and covering the metal film so that the metal terminal encloses the terminal-shaped resist film, a thick metal terminal integrated with the resist film can be formed.
Further, the resist film for forming the thick portion of the metal terminal may be formed independently at the time of forming the metal terminal, but it may be stacked stepwise when forming the resist film insulating layer forming the magnetic head element portion. You may form. This can further shorten the copper terminal formation time.
【0011】[0011]
【作用】この構成によって、金属端子の肉厚部をレジス
ト膜にて形成し、このレジスト膜を包み込むように金属
メッキ膜を積層覆設して金属端子の形成を行うので実質
的に膜厚の厚い金属端子を短時間に形成することができ
る。With this structure, the thick portion of the metal terminal is formed of the resist film, and the metal plating film is laminated and covered so as to wrap the resist film to form the metal terminal. A thick metal terminal can be formed in a short time.
【0012】[0012]
【実施例】以下本発明の一実施例における薄膜磁気ヘッ
ドについて、図面を参照しながら説明する。図1は本発
明の一実施例における薄膜磁気ヘッドの銅端子部分の要
部断面図である。1は基板、2は引き出し端子、3は金
属端子メッキ用下地電極膜、9は外部銅端子、10は銅
端子、11はアルミナ保護膜であり、これらは従来例と
同様なものなので同一の符号を付し説明を省略する。1
2は内部銅端子の形状をしたレジスト膜である。DESCRIPTION OF THE PREFERRED EMBODIMENTS A thin film magnetic head according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an essential part of a copper terminal portion of a thin film magnetic head according to an embodiment of the present invention. Reference numeral 1 is a substrate, 2 is a lead terminal, 3 is a base electrode film for plating a metal terminal, 9 is an external copper terminal, 10 is a copper terminal, and 11 is an alumina protective film. Is attached and the description is omitted. 1
2 is a resist film in the shape of an internal copper terminal.
【0013】以上のように構成された本発明の一実施例
における薄膜磁気ヘッドについて、以下その製造方法を
説明する。図2(a)乃至図4(c)は本発明の一実施
例における薄膜磁気ヘッドの銅端子形成工程を示す要部
断面図である。4はレジスト膜、8は外部銅端子パター
ンであり、これは従来例と同様なもので同一の符号を付
し説明を省略する。まず、図2(a)に示すように磁気
ヘッド素子部(図示せず)が形成済の基板1上に形成済
の磁気ヘッド素子部と導通する引き出し端子2の表面に
ノボラック系ポジタイプのレジスト膜12を膜厚が40
ミクロンになるようにスピナーでスピンコートした後、
オーブンで90℃×30分の熱処理を行う。次に、この
レジスト膜12を露光・現像した後、純水洗浄して図2
(b)に示すような内部銅端子7の形状をしたレジスト
膜12を形成する。このレジスト膜12の寸法は、12
0ミクロン×180ミクロンの長方形断面で膜厚40ミ
クロンである。次に、このレジスト膜12にオーブンに
て140℃×30分、170℃×120分の熱処理を加
えてレジスト膜12を焼結させる。次に、図2(c)に
示すように引き出し端子2及びレジスト膜12を包み込
むように金属端子メッキ用下地電極膜3をスパッタ成膜
にて1000オングストロームの膜厚で積層覆設する。A method of manufacturing the thin film magnetic head having the above structure according to the embodiment of the present invention will be described below. 2 (a) to 4 (c) are cross-sectional views of essential parts showing a copper terminal forming step of the thin film magnetic head in one embodiment of the present invention. Reference numeral 4 is a resist film, and 8 is an external copper terminal pattern, which is the same as that of the conventional example and is given the same reference numeral and its description is omitted. First, as shown in FIG. 2A, a novolac-based positive type resist film is formed on the surface of the lead terminal 2 which is electrically connected to the formed magnetic head element portion on the substrate 1 on which the magnetic head element portion (not shown) is formed. 12 to 40
After spin coating with a spinner so that it becomes micron,
Heat treatment is performed in an oven at 90 ° C. for 30 minutes. Next, after exposing and developing this resist film 12, it is washed with pure water to obtain the structure shown in FIG.
A resist film 12 having the shape of the internal copper terminal 7 as shown in (b) is formed. The size of this resist film 12 is 12
The rectangular cross section of 0 micron × 180 micron has a film thickness of 40 micron. Next, this resist film 12 is heat-treated in an oven at 140 ° C. × 30 minutes and 170 ° C. × 120 minutes to sinter the resist film 12. Next, as shown in FIG. 2C, a metal terminal plating base electrode film 3 is laminated and covered by sputtering to a thickness of 1000 Å so as to surround the lead terminals 2 and the resist film 12.
【0014】次に、図3(a)に示すように、ノボラッ
ク系ポジタイプのレジスト膜4を膜厚が40ミクロンに
なるようにスピナーでスピンコートし、オーブンにて9
0℃×30分の熱処理後、内部銅端子7の形状をしたレ
ジスト膜12が外部銅端子パターン8の中央に位置する
ように露光・現像した後、純水洗浄して外部銅端子パタ
ーン8を形成する。次に、図3(b)に示すように金属
端子メッキ用下地電極膜3が露出している部分に電解メ
ッキ法にて外部銅端子9を形成する。外部銅端子9の寸
法は200ミクロン×260ミクロンの長方形断面で膜
厚は20ミクロンである。電解メッキの条件は、陰極電
流密度4A/dm2で1基板当たり20分である。この
とき外部銅端子9の膜厚は、レジスト膜4の膜厚よりも
薄いためにレジスト膜4を乗り越えることはない。内部
銅端子7の形状をしたレジスト膜12の上では外部銅端
子9の膜厚が加わり、レジスト膜4よりも厚い膜厚60
ミクロンの銅端子10が形成されたことになる。次に、
図3(c)に示すようにレジスト膜4を全面露光・現像
した後、純水洗浄してレジスト膜4を除去する。Next, as shown in FIG. 3 (a), a novolac-based positive type resist film 4 is spin-coated by a spinner so that the film thickness becomes 40 microns, and the resist film 4 is heated in an oven 9
After heat treatment at 0 ° C. for 30 minutes, the resist film 12 having the shape of the internal copper terminal 7 is exposed and developed so as to be located at the center of the external copper terminal pattern 8, and then washed with pure water to form the external copper terminal pattern 8. Form. Next, as shown in FIG. 3B, external copper terminals 9 are formed on the exposed portions of the metal terminal plating base electrode film 3 by electrolytic plating. The external copper terminal 9 has a rectangular cross section of 200 μm × 260 μm and a film thickness of 20 μm. The conditions for electrolytic plating are cathode current density of 4 A / dm 2 and 20 minutes per substrate. At this time, since the film thickness of the external copper terminal 9 is smaller than the film thickness of the resist film 4, it does not get over the resist film 4. On the resist film 12 in the shape of the internal copper terminal 7, the film thickness of the external copper terminal 9 is added, and the film thickness 60 is larger than that of the resist film 4.
Thus, the micron copper terminal 10 is formed. next,
As shown in FIG. 3C, the resist film 4 is entirely exposed and developed, and then washed with pure water to remove the resist film 4.
【0015】次に、過硫酸アンモニウム30g/l,ラ
ウリル硫酸ナトリウム0.05g/l,水酸化ナトリウ
ムをpH6〜7に調整した銅用エッチング液にてケミカ
ルエッチングして金属端子メッキ用下地電極膜3の不要
部分を除去して図4(a)に示すような略台形状をした
レジスト膜12と外部銅端子9からなる膜厚60ミクロ
ンの銅端子10が形成される。Next, the base electrode film 3 for metal terminal plating is chemically etched by a copper etching solution in which ammonium persulfate 30 g / l, sodium lauryl sulfate 0.05 g / l and sodium hydroxide are adjusted to pH 6 to 7. The unnecessary portion is removed to form a copper terminal 10 having a film thickness of 60 μm, which is composed of the resist film 12 and the external copper terminal 9 having a substantially trapezoidal shape as shown in FIG.
【0016】次に、図4(b)に示すようにこの銅端子
10上にアルミナ保護膜11をスパッタ成膜をした後、
図4(c)に示すように保護膜平坦化ラップ加工を行
い、外部銅端子9を露出させて銅端子10を形成する。Next, as shown in FIG. 4B, an alumina protective film 11 is formed on the copper terminal 10 by sputtering,
As shown in FIG. 4C, a protective film flattening lapping process is performed to expose the external copper terminals 9 to form the copper terminals 10.
【0017】尚、本実施例では、内部銅端子の形状をし
たレジスト膜を新たに形成し熱処理を行う必要がある
が、レジスト膜形成に要する時間は5分程度と短時間で
あり、また、レジスト膜の熱処理は複数枚同時処理が可
能なので、銅端子形成時間を従来に比べ約40%短縮す
ることができた。また、磁気ヘッド素子部を構成してい
るレジスト膜絶縁層(図示せず)を形成する際に、内部
銅端子の形状をしたレジスト膜を段階的に積み上げ、レ
ジスト膜絶縁層を焼き固める熱処理を利用して、内部銅
端子形状をしたレジスト膜の熱処理を行うことで、銅端
子形成時間を従来に比べ約60%短縮することができ
た。更に、メッキ槽の数が少なくてすむので、電源設備
等のコストでも約30%の削減をすることができた。In this embodiment, it is necessary to newly form a resist film having the shape of the internal copper terminal and to perform heat treatment, but the time required for forming the resist film is as short as about 5 minutes, and Since the heat treatment of the resist film can be performed on a plurality of sheets at the same time, the copper terminal formation time can be shortened by about 40% compared with the conventional case. Further, when forming a resist film insulating layer (not shown) forming the magnetic head element portion, a heat treatment is performed in which resist films having the shape of internal copper terminals are stacked in stages and the resist film insulating layer is baked and solidified. By utilizing the heat treatment of the resist film having the internal copper terminal shape, the copper terminal forming time could be shortened by about 60% as compared with the conventional case. Furthermore, since the number of plating tanks is small, the cost of power supply equipment can be reduced by about 30%.
【0018】以上のように本実施例によれば、銅端子の
肉厚部をレジスト膜にて形成し、焼き固めた後、このレ
ジスト膜上にレジスト膜を包み込むように銅端子を電解
メッキすることで、短時間で実質的に肉厚の銅端子を形
成することができる。As described above, according to the present embodiment, the thick portion of the copper terminal is formed of the resist film, and after being baked and hardened, the copper terminal is electrolytically plated on the resist film so as to wrap the resist film. This makes it possible to form a substantially thick copper terminal in a short time.
【0019】[0019]
【発明の効果】以上のように本発明は、金属端子の肉厚
部をレジスト膜にて形成し、このレジスト膜を包み込む
ように金属メッキ膜を積層覆設して金属端子を形成する
ことにより、金属端子の膜厚を厚くでき、金属端子周辺
からの金属腐食等の発生しない高品質で信頼性の高い薄
膜磁気ヘッドを実現できるものであり、また、短時間で
膜厚の厚い金属端子を形成でき、低原価で生産性に優れ
た薄膜磁気ヘッドの製造方法を実現できるものである。As described above, according to the present invention, the metal terminal is formed by forming the thick portion of the metal terminal with the resist film and laminating and covering the metal plating film so as to surround the resist film. In addition, it is possible to increase the film thickness of the metal terminal and realize a high quality and highly reliable thin film magnetic head in which metal corrosion does not occur around the metal terminal. It is possible to realize a method for manufacturing a thin film magnetic head that can be formed, is low in cost, and has excellent productivity.
【図1】本発明の一実施例における薄膜磁気ヘッドの銅
端子部分の要部断面図FIG. 1 is a sectional view of an essential part of a copper terminal portion of a thin film magnetic head according to an embodiment of the present invention.
【図2】(a)は本発明の一実施例における薄膜磁気ヘ
ッドの銅端子形成工程を示す要部断面図 (b)は本発明の一実施例における薄膜磁気ヘッドの銅
端子形成工程を示す要部断面図 (c)は本発明の一実施例における薄膜磁気ヘッドの銅
端子形成工程を示す要部断面図FIG. 2A is a sectional view of a main part showing a copper terminal forming step of a thin film magnetic head according to an embodiment of the present invention. FIG. 2B shows a copper terminal forming step of a thin film magnetic head according to an embodiment of the present invention. Sectional view of essential part (c) is a sectional view of essential part showing a step of forming a copper terminal of a thin-film magnetic head according to an embodiment of the present invention.
【図3】(a)は本発明の一実施例における薄膜磁気ヘ
ッドの銅端子形成工程を示す要部断面図 (b)は本発明の一実施例における薄膜磁気ヘッドの銅
端子形成工程を示す要部断面図 (c)は本発明の一実施例における薄膜磁気ヘッドの銅
端子形成工程を示す要部断面図FIG. 3A is a sectional view of a principal part showing a copper terminal forming process of a thin film magnetic head according to an embodiment of the present invention. FIG. 3B is a copper terminal forming process of a thin film magnetic head according to an embodiment of the present invention. Sectional view of essential part (c) is a sectional view of essential part showing a step of forming a copper terminal of a thin-film magnetic head according to an embodiment of the present invention.
【図4】(a)は本発明の一実施例における薄膜磁気ヘ
ッドの銅端子形成工程を示す要部断面図 (b)は本発明の一実施例における薄膜磁気ヘッドの銅
端子形成工程を示す要部断面図 (c)は本発明の一実施例における薄膜磁気ヘッドの銅
端子形成工程を示す要部断面図FIG. 4A is a sectional view of a principal part showing a copper terminal forming step of a thin film magnetic head according to an embodiment of the present invention, and FIG. 4B is a copper terminal forming step of a thin film magnetic head according to an embodiment of the present invention. Sectional view of essential part (c) is a sectional view of essential part showing a step of forming a copper terminal of a thin-film magnetic head according to an embodiment of the present invention.
【図5】従来の薄膜磁気ヘッドの銅端子部分の要部断面
図FIG. 5 is a cross-sectional view of essential parts of a copper terminal portion of a conventional thin film magnetic head.
【図6】(a)は従来の薄膜磁気ヘッドの銅端子形成工
程を示す要部断面図 (b)は従来の薄膜磁気ヘッドの銅端子形成工程を示す
要部断面図 (c)は従来の薄膜磁気ヘッドの銅端子形成工程を示す
要部断面図FIG. 6A is a sectional view of a main part showing a copper terminal forming process of a conventional thin film magnetic head, and FIG. 6B is a sectional view of a main part showing a copper terminal forming process of a conventional thin film magnetic head. Sectional drawing of the principal part which shows the copper terminal formation process of a thin film magnetic head.
【図7】(a)は従来の薄膜磁気ヘッドの銅端子形成工
程を示す要部断面図 (b)は従来の薄膜磁気ヘッドの銅端子形成工程を示す
要部断面図 (c)は従来の薄膜磁気ヘッドの銅端子形成工程を示す
要部断面図7A is a cross-sectional view of a main part showing a copper terminal forming process of a conventional thin film magnetic head, FIG. 7B is a cross-sectional view of a main part showing a copper terminal forming process of a conventional thin film magnetic head, and FIG. Sectional drawing of the principal part which shows the copper terminal formation process of a thin film magnetic head.
【図8】(a)は従来の薄膜磁気ヘッドの銅端子形成工
程を示す要部断面図 (b)は従来の薄膜磁気ヘッドの銅端子形成工程を示す
要部断面図 (c)は従来の薄膜磁気ヘッドの銅端子形成工程を示す
要部断面図FIG. 8A is a sectional view of a main part showing a copper terminal forming process of a conventional thin film magnetic head, and FIG. 8B is a sectional view of a main part showing a copper terminal forming process of a conventional thin film magnetic head. Sectional drawing of the principal part which shows the copper terminal formation process of a thin film magnetic head.
1 基板 2 引き出し端子 3 金属端子メッキ用下地電極膜 4,6,12 レジスト膜 5 内部銅端子パターン 7 内部銅端子 8 外部銅端子パターン 9 外部銅端子 10 銅端子 11 アルミナ保護膜 1 substrate 2 lead terminal 3 base electrode film for metal terminal plating 4, 6, 12 resist film 5 internal copper terminal pattern 7 internal copper terminal 8 external copper terminal pattern 9 external copper terminal 10 copper terminal 11 alumina protective film
Claims (2)
の肉厚部を構成するレジスト膜と、前記レジスト膜上に
積層覆設された金属端子メッキ用下地電極膜と、前記金
属端子メッキ用下地電極膜上にメッキ成膜された金属端
子と、を備えたことを特徴とする薄膜磁気ヘッド。1. A resist film constituting a thick portion of a metal terminal laminated on a lead terminal, a metal terminal plating base electrode film laminated and covered on the resist film, and the metal terminal plating. A thin-film magnetic head, comprising: a metal terminal plated on the underlying electrode film.
法であって、前記金属端子の肉厚部を構成するレジスト
膜を形成するレジスト膜形成工程と、前記レジスト膜上
に金属端子メッキ用下地電極膜を被着積層する金属端子
メッキ用下地電極膜形成工程と、前記金属端子メッキ用
下地電極膜上に金属端子をメッキ成膜する金属端子形成
工程と、を備えたことを特徴とする薄膜磁気ヘッドの製
造方法。2. A method of manufacturing a thin film magnetic head having metal terminals, comprising: a resist film forming step of forming a resist film forming a thick portion of the metal terminal; and a metal terminal plating base on the resist film. A thin film comprising: a step of forming a base electrode film for metal terminal plating for depositing and laminating an electrode film; and a step of forming a metal terminal by plating a metal terminal on the base electrode film for metal terminal plating. Magnetic head manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29514193A JPH07153027A (en) | 1993-11-25 | 1993-11-25 | Thin film magnetic head and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29514193A JPH07153027A (en) | 1993-11-25 | 1993-11-25 | Thin film magnetic head and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07153027A true JPH07153027A (en) | 1995-06-16 |
Family
ID=17816812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29514193A Pending JPH07153027A (en) | 1993-11-25 | 1993-11-25 | Thin film magnetic head and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07153027A (en) |
-
1993
- 1993-11-25 JP JP29514193A patent/JPH07153027A/en active Pending
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