JPH07147240A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To obtain a shutter main body wherein a semiconductor manufacturing equipment is miniaturized, cleaning preparing work load is reduced, member breakdown before and after cleaning is prevented, and particle contamination is reduced, as a shutter mechanism which closes the open end surface of a reaction tube at the time of plasma cleaning of the inside of the reaction tube. CONSTITUTION:The title equipment is provided with the following; a shutter main body constituted of a ring type member 6 for pressing sealing material 5 against the open end surface of a reaction tube 1 and a retaining member 12 for elastically retaining the ring type member 6, and a driving mechanism 16 for moving the retaining member 12 at the tip of an arm 15 via the arm 15. The above mechanism can be applied to the observation of plasma state by using the ring type member 6 as a peep window, and temperature measurement. By arranging a reflecting member 9 there, large thermal shielding mechanism is made unnecessary, and the equipment is miniaturized. By preventing the arm 15 from bending when the open end surface of the reaction tube 1 is closed, the generation of arm vibration is prevented, and the members unified with the shutter main body can be prevented from being broken down.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus capable of performing heat treatment such as thin film formation in a semiconductor manufacturing process and diffusion of another substance into the thin film. More specifically, the internal space serves as a reaction chamber. , A reaction tube having one open end, and heating means for heating the reaction chamber from outside the reaction tube,
It is provided outside the reaction chamber, is connected to a high frequency power supply, and is provided with a plurality of electrodes that generate plasma in the reaction chamber in a low-pressure atmosphere, and brings the object to a predetermined position in the reaction chamber during heat treatment of the object. After the heat treatment, the heating means is activated to bring the inside of the reaction chamber into a low-pressure atmosphere. The present invention relates to a semiconductor manufacturing device to generate.

[0002]

2. Description of the Related Art Conventionally, a semiconductor manufacturing apparatus of this type has a reduced pressure CV.
It is known and widely used as a D vapor phase growth apparatus. In the apparatus of this type, the apparatus configuration is different between the heat treatment of the object to be processed and the cleaning of the reaction chamber after the heat treatment. Therefore, the apparatus configuration during the heat treatment will be described first with reference to FIG.
Note that the configuration of FIG. 6 shows the configuration of a vertical decompression CVD apparatus in which the reaction tube is in the vertical direction, but a horizontal type in which the reaction tube is horizontal can be used for a substrate holding boat described below. The structure is substantially the same except that the structure is changed to the horizontal type.

The apparatus for heat treatment is a reaction tube 2 having an inner space 1 serving as a reaction chamber and having an open lower end surface, a heater 3 for surrounding the reaction tube 2 and heating the reaction chamber 1, and a reaction tube 2 Chamber flange 36 for hermetically closing the open lower end face of the
And a boat 38 which is formed in a multi-stage shelf shape and is supported at the tip of a linear drive shaft 46, and in which a substrate 39 as an object to be processed is inserted and held in each shelf, and a linear magnet provided with a permanent magnet 19 at the lower end. A linear movement mechanism 44 including a vacuum chamber 50 for guiding the movement of the shaft 46 and a guide plate 47, and an inert gas space having a lower pressure than the reaction chamber 1 in the vacuum chamber 50 by partitioning the reaction chamber 1 from the vacuum chamber 50. And a cover 40 for keeping particles existing in the vacuum chamber 50 from rising up into the reaction chamber 1 and radiant heat directed from the inside of the reaction chamber 1 toward the lower end face of the reaction tube 2 to the outside. The arm tip is provided with a heat shield means 41 for uniforming the temperature distribution in the reaction chamber 1 by shielding it so that it does not exist, and a permanent magnet 49 for transmitting a moving force in the axial direction to the permanent magnet 48 at the tip of the linear drive shaft 46. The drive mechanism 45 is used as a main member. It is. Drive mechanism 4 during heat treatment
5, after the substrate 39 held by the board 38 via the linear drive shaft 46 is brought into a predetermined soaking area in the reaction chamber 1, the heater 3 heats the reaction chamber 1 and The reaction gas is introduced through the inlet 34 and the gas outlet 3
The heat treatment is performed while discharging the reacted gas from 5.

The apparatus for cleaning the inner wall surface of the reaction tube is, as shown in FIG. 5, separated from the heating power source after the heat treatment of the object to be processed and the reaction tube 2 having the inner space as the reaction chamber 1 and having the lower end face opened. The inside of the reaction tube 1 that is kept in a low pressure atmosphere is connected to a heater 3 that keeps the inside of the reaction tube 2 at a high temperature for a long period of time even after being heated, and a high frequency power source (not shown) that is provided outside the reaction tube 2. A plurality of electrodes 4 for generating plasma, a plate-shaped shutter 21 that hermetically closes the lower end surface of the reaction chamber 2, and an arm 27 with the shutter 21 integrated at its tip end are moved vertically or around a vertical axis. The drive mechanism 24 that is driven to rotate to the reaction chamber 1 and the reaction chamber 1 during cleaning
A heat shield mechanism 26 for preventing internal heat from escaping from the lower end face to the outside and for uniformizing the temperature distribution in the reaction chamber 1 is configured as a main member. At the time of cleaning the wall surface of the reaction chamber, the O-ring 22 is inserted into the groove formed on the upper surface side of the shutter 21, and the drive mechanism 24 is operated to bring the O-ring 22 into contact with the lower end surface of the reaction tube 2 and then the reaction chamber. When a vacuum pressure is applied to the inside of the chamber 1, atmospheric pressure is applied to the shutter 21, and due to this force, the O-ring 22 is pressed against the lower end face to be deformed, and the reaction chamber 1
Keep the inside airtight. Therefore, while continuing to evacuate the reaction chamber 1, the gas inlet 34 (FIG. 6) is used to remove CF ₄ , NF ₃
When a low atmospheric pressure atmosphere is introduced in the reaction chamber 1 by introducing an etching gas such as a gas and a plasma is formed in the reaction chamber 1 by supplying a high frequency voltage to the electrode 4, the electrons in the plasma have much higher mobility than the ions. Due to its large size, the inner wall surface of the reaction tube 2 is negatively charged, ions in the plasma collide with the inner wall surface to sputter the thin film deposited on the inner wall surface during the heat treatment, and the radicals of the etching gas excited by the plasma The inner wall surface is effectively cleaned by the chemical reaction at high temperature.

[0005]

In the conventional apparatus having the structure shown in FIG. 5 when cleaning the inner wall of the reaction chamber, the O-ring inserted in the groove on the upper surface of the shutter when the open end surface of the reaction tube is closed is the open end surface. When the contact with the open end surface of the O-ring is reached, the upward movement of the shutter is stopped to bring the reaction chamber to a vacuum pressure and the O-ring is pressed and deformed by the force of the atmospheric pressure. After that, the drive mechanism is stopped, and the cleaning is performed with the arm 27 bent upward by the deformation amount of the O-ring. Therefore, when cleaning is completed and atmospheric pressure is introduced to return the pressure to the atmospheric pressure in the reaction chamber, the arms try to return to the original state and vibration occurs, which causes the quartz block and the quartz case filled with quartz wool to move. There is a problem that the formed heat shield mechanism is damaged, and further, the heat shield mechanism and the inner wall surface of the reaction tube are rubbed with each other to generate particles at the time of taking out after cleaning. As a method of preventing arm vibration, after contacting the open end face of the O-ring, the arm follows upward by the same amount as the natural deformation of the O-ring due to atmospheric pressure when the reaction chamber is evacuated. It is conceivable to operate the drive mechanism in a state where the reaction chamber is at atmospheric pressure so that the above state is achieved. However, in order to operate so that the movement amount of the arm matches the natural deformation amount of the O-ring, it is necessary to know the natural deformation amount in advance. However, since the hardness of the O-ring changes with temperature, the deformation amount also changes. Depending on the temperature, this method is very difficult to implement. Therefore, in order to avoid this difficulty and prevent the occurrence of vibration, if the deformation is obviously larger than the natural deformation amount, the operation becomes easy, but the driving mechanism becomes large.

Further, the heat shield mechanism uses a quartz block, quartz wool or the like for heat shield, and if the heat shield effect is enhanced to make the temperature distribution in the reaction chamber more uniform, the heat shield mechanism is used. The height of the reaction tube increases in the height direction, which increases the height of the reaction tube and the space below the open end surface of the reaction tube for moving in and out of the reaction chamber of the heat shield mechanism. The distance became longer and the height of the entire device became higher. Further, the drive mechanism 24 that moves the shutter in the vertical direction (hereinafter referred to as the Z-axis direction) and around the horizontal plane axis (hereinafter referred to as the θ-axis direction) determines the required drive force based on the total weight of the shutter and the heat shield mechanism. Since the size of the semiconductor substrate, which represents the object to be processed, is increasing from 6 inches to 8 inches, both the heat shield mechanism and the shutter are increasing in size and weight. There has been a problem that the driving force becomes large and the driving mechanism becomes large.

Further, it is desirable to be able to observe the plasma state and the cleaning state in the reaction chamber from the outside during the cleaning of the inner wall surface of the reaction tube. However, in the conventional apparatus, the heat shielding is performed in order to improve the heat insulating effect for uniforming the temperature distribution in the reaction chamber. Since the heat shields are stacked in the height direction as a mechanism, the inside of the reaction chamber cannot be observed from the outside even if the shutter is made of a transparent material. Occurs, and it requires time and effort to restart the temperature of the reaction chamber for cleaning again, and the film on the wall surface of the reaction chamber is significantly reduced compared to before cleaning. In the heat treatment step, there is a problem that particle contamination occurs. Also, if it can be observed from the outside, the temperature distribution in the reaction chamber can be easily measured using, for example, an infrared radiation thermometer. A thermocouple is attached and put in the reaction tube, and the thermocouple lead wire is pulled out through the shutter in an airtight manner to measure the temperature distribution, requiring a lot of time and effort to prepare for cleaning, and operation of the device There was a problem of lowering the rate.

An object of the present invention is to reduce the size of the apparatus structure for cleaning the inner wall of the reaction chamber in the entire semiconductor manufacturing apparatus including the apparatus structure for heat treatment of the object to be processed, and to reduce the size of the entire semiconductor device. (EN) Provided is a semiconductor manufacturing apparatus having a shutter mechanism in which preparatory work for cleaning is significantly reduced in time and labor, members are less likely to be damaged before and after cleaning, and particle contamination is less likely to occur in the next step. That is.

[0009]

In order to solve the above problems, according to the present invention, a semiconductor manufacturing apparatus having the structure described in the beginning, which is the object of the present invention, that is, an internal space serves as a reaction chamber, and one end surface is An open reaction tube, heating means for heating the reaction chamber from the outside of the reaction tube, and a plurality of electrodes arranged outside the reaction chamber and connected to a high frequency power source to generate plasma in the reaction chamber in a low pressure atmosphere When the heat treatment is performed on the object, the object is brought to a predetermined position in the reaction chamber to create a low-pressure atmosphere in the reaction chamber, and then the heating means is operated to remove the object when cleaning the inner wall surface of the reaction tube after the heat treatment. In a semiconductor manufacturing apparatus for generating plasma in the reaction chamber after bringing it to the outside of the reaction chamber to create a low-pressure atmosphere in the reaction chamber, the open end surface of the reaction tube when cleaning the wall surface of the reaction chamber A shutter mechanism for closing was supported by a ring-shaped member whose peripheral portion was pressed against the open end surface of the reaction tube via a seal material, and a support member which supported the ring-shaped member in a direction perpendicular to the ring surface via an elastic body. The ring-shaped member includes a ring mechanism and a drive mechanism that moves the support member in a direction perpendicular to the ring surface.

In the shutter mechanism constructed by using such members and mechanisms, the opening inside the ring-shaped member is hermetically closed by the transparent plate-shaped member and the plate-shaped member is provided on the side opposite to the reaction chamber. It is extremely suitable to have a structure in which a reflecting member having a radiant heat reflecting surface that reflects radiant heat transmitted through the plate-shaped member is arranged. Here, the reflecting member arranged on the side opposite to the reaction chamber of the transparent plate-shaped member is arranged so as to be separated from the plate-shaped member so that the transparent plate-shaped member functions as a viewing window at any time during cleaning. Is more preferable.

Further, a plate for deforming the cross-sectional shape of the O-ring after the air-tight chain of the ring-shaped member inner opening made of a transparent plate member uses the O-ring as a sealing material and contacts the O-ring due to the air-tight chain. It is preferable that the peripheral edge of the strip-shaped member is formed into a tapered surface. The ring-shaped member may be provided with a flow path of a cooling medium for cooling the ring-shaped member in the circumferential direction.

[0012]

As described above, the shutter mechanism supports the ring-shaped member whose peripheral portion is pressed against the open end surface of the reaction tube through the sealing material, and supports the ring-shaped member in the direction perpendicular to the ring surface through the elastic body. When the support member and the drive mechanism for moving the support member in the direction perpendicular to the ring surface of the supported ring-shaped member are used, a sealing material for hermetically closing the open end surface of the reaction tube is provided. Since the ring-shaped member that presses against is supported by the support member through the elastic body, the opening inside the ring-shaped member that can be used for various purposes is closed by another member to form the shutter main body and hold it. When the sealing material comes into contact with the open end surface of the reaction tube, the movement of the support member is stopped, the reaction tube is evacuated, and atmospheric pressure is applied to the shutter to press and deform the sealing material. One in one Z-axis direction, the arm being moved driven in θ-axis direction by to the support member and hold the drive mechanism,
The load is lightened by the deformation of the sealing material and the expansion of the elastic body, and the change in the force received is only the weight of the shutter at maximum, and the reaction from the stop position corresponds to the change in the force received. The flexure returns to the room side. Therefore, the force received by the support member when the shape of the seal material is restored when the reaction chamber inner wall surface is cleaned and the reaction chamber is returned to atmospheric pressure is only the force that accompanies the deformation of the elastic body that supports the shutter. However, since it is only the weight of the shutter, the force applied to the arm holding the support member at the tip is always equal to or less than the weight of the shutter, and the force applied to the drive mechanism is extremely small.
Further, since the ring-shaped member is not integrated with the arm, unlike the conventional case, a force that pulls the shutter back to the initial position of pressing the seal material does not act from the deformed arm side, and the shutter is large in the reaction tube. Gradually return to the seal material pressing initial position at the same speed as the atmospheric pressure return speed. As a result, even if another member is mounted on the shutter, the member is extremely unlikely to be damaged.

A shutter mechanism constituted by using such members and mechanisms is hermetically closed at the opening inside the ring-shaped member by a transparent plate-shaped member, and the plate is provided on the side opposite to the reaction chamber of the plate-shaped member. If a structure is provided in which a reflecting member having a radiant heat reflecting surface that reflects the radiant heat that has passed through the cylindrical member is arranged, the heat that tries to escape from the open end surface of the reaction tube to the outside is reflected by the reflecting member. By making the reflecting surface a metal mirror surface or a gold-plated surface, the heat insulating effect is much higher than that of a heat-resistant material with low thermal conductivity, such as quartz, so that a heat shield does not need to be stacked in the reaction chamber. The temperature inside the reaction chamber can be maintained at a high temperature, and the radiant heat reflecting surface can be shaped to have a curved surface that is convex toward the reaction chamber side or a truncated cone shape, for example. Reduction is effectively prevented, the uniformity of the reaction chamber the temperature distribution is improved.

As described above, since the plate member is made of a transparent material and the reflecting member is provided, the heat shield mechanism is not required on the reaction chamber side of the shutter body, so that the reaction of the transparent plate member can be avoided. If the reflecting member arranged on the chamber side is arranged so as to be separated from the plate-shaped member, the transparent plate-shaped member can be made to function as a peep window by removing this reflecting member, and the inside of the reaction chamber The plasma state and the cleaning state can be observed from the outside at any time, the insufficient cleaning can be easily prevented, and particle contamination in the next step can be made less likely to occur. In addition, the temperature distribution in the reaction chamber can be easily measured from the outside by using an infrared radiation thermometer, and the operation of the device is significantly facilitated.

A plate for deforming the cross-sectional shape of the O-ring after the air-tight chain at the inner opening of the ring-shaped member made of a transparent plate member uses the O-ring as a sealant and contacts the O-ring due to the air-tight chain. When the peripheral edge of the ring-shaped member is formed into a tapered surface, it becomes easy to prevent the plate-shaped member from coming into contact with the ring-shaped member when the O-ring cross section is deformed, and a transparent plate made of, for example, quartz glass is used. It is possible to prevent breakage of the member. If this closed structure is not used, a ring-shaped square groove having a depth close to the diameter of the O-ring is formed in the ring-shaped member made of a metal material, and the O-ring is inserted in this groove, as is usually done. ,
If the O-ring is pressed and deformed until the inlet end face of the groove comes into contact with the plate-like member to perform an air-tight seal, the compression allowance of the O-ring will always be constant and uniform airtight performance will be easy, while pressing It is difficult to reduce the probability of over-tightening of the bolt to zero during deformation, and therefore the problem that the bulging plate-like member is easily damaged due to the material cannot be avoided. Even if the ring-shaped member and the plate-shaped member are not in contact
It is possible to keep the compression margin of the ring constant, for example, by using a block gauge, a gap gauge, or the like, or by taking structural considerations.

If the ring-shaped member is provided with a flow path for a cooling medium for cooling the ring-shaped member in the circumferential direction, deterioration or deformation of the sealing material or the O-ring in contact with the ring-shaped member can be prevented. Therefore, it is possible to prevent vacuum leakage of the reaction chamber, reduce the number of interruptions of the operation of the apparatus, and prevent a decrease in the operation rate of the apparatus.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 and FIG. 2 show an apparatus configuration for cleaning an inner wall surface of a reaction tube of a semiconductor manufacturing apparatus according to the present invention.
It shows including one Example of the shutter mechanism structure by this invention. Here, FIG. 1 is a side partial cross-sectional view of this device configuration, and FIG. 2 is a plan view. 3 and 4 are enlarged cross-sectional views of the main part of the shutter mechanism shown in FIGS. 1 and 2.

The apparatus structure of the semiconductor manufacturing apparatus at the time of cleaning the inner wall surface of the reaction tube includes a reaction tube 2 whose inner space is the reaction chamber 1, one end surface of which is open, and a heater 3 which surrounds the reaction tube 2 in a cylindrical shape. Electrode 4 arranged outside the reaction tube 2
And a shutter mechanism described below.
This shutter mechanism has a ring-shaped member 6 whose peripheral edge is pressed against the open end surface of the reaction tube 2 via a sealing material 5 for hermetically sealing the open end surface of the reaction tube 2, and an opening inside the ring-shaped member 6. A plate-shaped member 7 for closing the vacuum space inside the reaction chamber 1 and the atmospheric space outside the reaction chamber 1 by closing 6a, and a ring-shaped member for maintaining airtightness between the ring-shaped member 6 and the plate-shaped member 7. 6, an O-ring 8 that is fitted into the recess of the plate-shaped member 7 and is in contact with the tapered surface 7a (FIG. 3) formed on the plate-shaped member 7, a reflection member 9 that is arranged on the atmospheric space side of the plate-shaped member 7, and a reflection member 9 A shutter body composed of a fixing ring 10 for fixing the plate-shaped member 7 to the ring-shaped member 6, a support member 12 for supporting the shutter body via an elastic body, and a support member 12
And a mechanism 16 for driving the arm 15 that integrally supports the arm in the Z-axis and θ-axis directions. The ring-shaped member 6 forming the shutter main body has a sealing material 5
A cooling medium flow path 11 for cooling the O-ring 8 and the O-ring 8 is provided, and a temperature rise is prevented by a cooling mechanism (not shown).

Further, as shown in FIG. 3, the supporting member 12 for supporting the ring-shaped member 6 through the elastic body is formed in a ring shape as a whole and accommodates the coil spring 14a which constitutes the elastic body. Four screw rod-shaped pressurizing mechanisms 14 (FIG. 2) in which the support pieces 14b are protruded from the ring surface are provided at equal intervals in the circumferential direction, and are planted on the lower surface side of the ring-shaped member 6 as shown in FIG. The three bolt-shaped guide mechanisms 13 are integrated with the ring-shaped member 6 so as to be vertically movable relative to the ring-shaped member 6. Further, the upper surface of the reflecting member 9 constitutes a radiant heat reflecting surface plated with gold, and the reflecting member 9 and the transparent plate member 7 are arranged so as not to damage the reflecting surface.
A ring-shaped liner 20 is interposed between and. In this embodiment, the shutter mechanism has the above-mentioned configuration, and its operation will be described below.

An object to be processed (not shown) is placed outside the reaction chamber 1.
After bringing it into place, not shown, or
Removes unnecessary reaction products attached to the inner wall surface of the reaction tube 2.
To hermetically seal the open end surface of the reaction tube 2 when leaving
Then, the drive mechanism 16 is operated to rotate the arm 15 in the θ-axis direction.
When the moving operation is performed, the ring-shaped member 6, the plate-shaped member 7, O
The ring 8, the reflector 9 and the fixed ring 10 are integrated.
The shutter body moves to a position below the reaction tube 2, and
The drive mechanism 16 moves in the Z-axis direction to seal the material.
5 is brought into contact with the open end surface of the reaction tube 2 and, in this state, the reaction chamber
When the inside of 1 is vacuum pressure, atmospheric pressure is applied to the shutter body,
Equal to the product of atmospheric pressure and the area of the circle surrounded by the sealing material 5.
The sealing material 5 is pressed against the open end surface of the reaction tube 2 by the force and is deformed.
The open end face is kept airtight. Next, in reaction chamber 1
While continuing the exhaust, N in the reaction chamber 1 ₂Introduced
Heats the reaction chamber 1 with the heater 3 to remove the water in the reaction chamber 1.
Remove. Where the water inside the reaction chamber 1 has been sufficiently removed
So N₂CF instead of_Four, NF₃Etching gas guide
ON, and the electrode 4 from the high frequency power source to the high frequency power source.
By supplying pressure, plasma is generated in the reaction chamber 1, and plasma is generated.
Sputtering effect of ions in silicon and radical of etching gas
The reaction product on the inner wall of the reaction chamber is removed by
Leave. After cleaning the inner wall of the reaction tube,
The shutter body is not shown in the reverse order of the described operations.
Can be brought to a waiting position.

When the temperature distribution in the reaction chamber 1 is measured and the plasma state and the cleaning state are observed during cleaning, the fixing screw 17 (FIG. 3) is removed while continuing the cleaning process. By removing the fixing ring 10, the reflecting member 10 and the ring-shaped liner 20, the transparent plate-shaped member can be made to function as a viewing window. Therefore, the temperature distribution measurement in the reaction chamber 1 by the infrared radiation thermometer and the reaction chamber 1 can be performed. In-house observation etc. become possible. Since atmospheric pressure is applied to the back surface of the plate member 7, even if the fixing ring 10 is removed, the plate member 7 does not drop, and the O-ring 8 is kept pressed to maintain airtightness. Can be removed at any time to perform the above temperature measurement and observation.

[0022]

According to the present invention, the peripheral edge portion of the shutter mechanism that hermetically closes the open end surface of the reaction tube when the inner wall surface of the reaction tube whose one end surface is open is cleaned is pressed against the open end surface of the reaction tube through the sealing material. A ring-shaped member, a support member that supports the ring-shaped member in a direction perpendicular to the ring surface via an elastic body, and a drive mechanism that moves the support member in a direction perpendicular to the ring surface of the supported ring-shaped member Since the support member is integrated with the tip and the arm supporting the shutter body does not vibrate, the member does not break even if another member is integrated with the shutter body. Further, since the driving mechanism for moving the arm in the Z-axis direction is not applied with a force larger than the weight of the shutter body, the driving mechanism can be downsized. As described above, it is possible to improve the reliability and size of the semiconductor manufacturing apparatus in terms of use.

Further, the shutter mechanism is further airtightly closed by an opening inside the ring-shaped member by a transparent plate-shaped member, and the radiant heat transmitted through the plate-shaped member is reflected to the reaction chamber side of the plate-shaped member. By adopting a structure in which a reflecting member having a radiant heat reflecting surface is arranged, a block-shaped heat shielding mechanism as in the conventional case is unnecessary, and a blocking mechanism is provided when moving the shutter mechanism to a standby position after cleaning. The generation of particles is eliminated by rubbing against the inner wall surface of the reaction tube. In addition, the shape of the radiant heat reflecting surface of the reflecting member makes it possible to control the temperature distribution in the reaction chamber and uniformly clean the entire wall surface of the reaction chamber, which reduces particle contamination in the next step and heat treatment. The yield of what is made is improved.

Further, the shutter mechanism is structured such that the reflecting member arranged on the side opposite to the reaction chamber of the transparent plate member is arranged so as to be separated from the plate member, so that the reflecting member can be removed at any time. The plate-shaped member can function as a viewing window, and the temperature distribution in the reaction chamber can be controlled by simply performing temperature measurement that requires labor and time for preparatory work because a temperature measurement jig is used as in the past. It becomes possible to
Moreover, since the plasma state and the cleaning state can be observed, a good cleaning result can be easily obtained.

Further, the shutter mechanism has a transparent plate-like member, and the airtight chain of the opening inside the ring-shaped member uses the O-ring as a sealing material, and after contacting the O-ring for the airtight chain, the sectional shape of the O-ring is changed. By adopting a structure in which the peripheral edge portion of the plate-shaped member to be deformed is formed into a tapered surface, it becomes difficult for the plate-shaped member to contact the ring-shaped member when the transparent plate-shaped member is integrated with the ring-shaped member. The member is less likely to be damaged, and even if a crack is generated, the probability of not being noticed and starting operation is reduced, and the reliability of device operation is improved.

Further, the shutter mechanism has a structure in which a flow path of a cooling medium for cooling the ring-shaped member in the circumferential direction is provided in the ring-shaped member, so that the shutter mechanism is held by the ring-shaped member or the ring-shaped member. The life of the sealing material in contact with the plate-shaped member is extended, and the running cost of the device is reduced.

[Brief description of drawings]

FIG. 1 is a side partial cross-sectional view showing an apparatus configuration including an embodiment of a shutter mechanism configuration according to the present invention when airtightly closing an open end surface of a reaction tube, such as during cleaning of an inside of a semiconductor manufacturing apparatus targeted by the present invention. Figure

FIG. 2 is a plan view of the device configuration shown in FIG.

FIG. 3 is an enlarged cross-sectional view of a main part in the device configuration shown in FIGS. 1 and 2.

FIG. 4 is an enlarged cross-sectional view of a main part different from that of FIG. 3 in the apparatus configuration shown in FIGS.

FIG. 5 is a side partial cross-sectional view showing an example of a conventional apparatus configuration when the reaction tube open end face of the semiconductor manufacturing apparatus of the present invention is airtightly closed.

FIG. 6 is a side sectional view showing an example of a conventional apparatus configuration during heat treatment of an object to be processed of a semiconductor manufacturing apparatus targeted by the present invention.

[Explanation of symbols]

 1 Reaction Chamber 2 Reaction Tube 2a Open End Surface 3 Heater 4 Electrode 5 Sealing Material 6 Ring Member 7 Plate Member 7a Tapered Surface 8 O Ring 9 Reflecting Member 11 Flow Path 12 Supporting Member 13 Vertical Mechanism 14 Pressurizing Mechanism 14a Coil Spring ( Elastic body) 14b support piece 15 arm 16 drive mechanism 21 shutter 22 O-ring 24 drive mechanism 27 arm 38 boat 39 substrate (object to be processed) 45 drive mechanism 46 linear drive shaft 48 permanent magnet 49 permanent magnet

Claims (5)

[Claims] 1. A reaction tube having an inner space serving as a reaction chamber, one end surface of which is open, heating means for heating the reaction chamber from the outside of the reaction tube, and a reaction tube provided outside the reaction chamber and connected to a high-frequency power source. And a plurality of electrodes for generating plasma in the reaction chamber in a low-pressure atmosphere, and when heating the object to be processed, bring the object to a predetermined position in the reaction chamber to create a low-pressure atmosphere in the reaction chamber and then heating means. In order to clean the inner wall surface of the reaction tube after heat treatment, in the semiconductor manufacturing equipment that brings the object to the outside of the reaction chamber to a low pressure atmosphere in the reaction chamber and then generates plasma in the reaction chamber, cleaning the inner wall surface of the reaction chamber A shutter mechanism that sometimes closes the open end surface of the reaction tube includes a ring-shaped member whose peripheral edge is pressed against the open end surface of the reaction tube through a sealant, and the ring-shaped member through an elastic body. The semiconductor manufacturing device comprising a support member for supporting the vertical direction ring plane, that and a drive mechanism for moving the support member to the ring plane and vertical supporting the ring-shaped member. 2. The apparatus according to claim 1, wherein the opening inside the ring-shaped member is hermetically closed by a transparent plate-shaped member, and the plate-shaped member is provided on the side opposite to the reaction chamber of the plate-shaped member. A semiconductor manufacturing apparatus, in which a reflecting member having a radiant heat reflecting surface that reflects the transmitted radiant heat is arranged. 3. The apparatus according to claim 2, wherein a reflecting member arranged on the side opposite to the reaction chamber of the transparent plate-shaped member is arranged so as to be separated from the plate-shaped member, and the transparent plate is always provided during cleaning. A semiconductor manufacturing apparatus characterized in that the shaped member has a viewing window function. 4. The device according to claim 2, wherein the airtight chain of the ring-shaped member inner opening formed by the transparent plate member uses the O-ring as a sealing material and abuts against the O-ring for the airtight chain. A semiconductor manufacturing apparatus, characterized in that a peripheral edge portion of a plate-like member that deforms a cross-sectional shape of a rear O-ring is formed into a tapered surface. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the ring-shaped member is provided with a flow path of a cooling medium for cooling the ring-shaped member in the circumferential direction.