JPH071442A - Manufacture of wafer - Google Patents
Manufacture of waferInfo
- Publication number
- JPH071442A JPH071442A JP14769493A JP14769493A JPH071442A JP H071442 A JPH071442 A JP H071442A JP 14769493 A JP14769493 A JP 14769493A JP 14769493 A JP14769493 A JP 14769493A JP H071442 A JPH071442 A JP H071442A
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- temp
- roller
- abrasive grain
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D59/00—Accessories specially designed for sawing machines or sawing devices
- B23D59/04—Devices for lubricating or cooling straight or strap saw blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ワイヤーソーによるイ
ンゴットの切断時に発生するウエーハの表面うねりを抑
制し、厚さのばらつき精度を向上させることを目的とし
たウエーハの製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a wafer for suppressing the surface waviness of the wafer generated when an ingot is cut by a wire saw and improving the accuracy of thickness variation.
【0002】[0002]
【従来の技術】半導体インゴット(丸形)、石英インゴ
ット(丸形、角形)等をワイヤーソーにより切断して得
たウエーハの形状は、切断開始時と終了時では厚さに差
が生じ、図4−a)に示した様にくさび形になり易く、
切断開始時は薄く、終了時は厚くなる。また、表面のう
ねり形状も図4−b)−、に示したように弓形か波
形になる傾向にある。この現象については、砥粒スラリ
ー中の砥粒の劣化、切断速度、ローラー変位等様々な方
向から解析がなされているが、まだ決め手となる解析結
果は得られていない。しかし、図4−a)のうねり形状
に注目すれば、切断されたすべてのウエーハが同一方向
に反っているという特徴があり、これはローラーの変位
(または伸縮)によって発生したと推測できる。つま
り、切断開始時と切断中ではローラーの変位量(切断開
始時のローラーの長さを基準とし、切断中の長さの伸縮
量を言う)が何らかの原因で異なったためにうねった状
態に切断されたと推測される。2. Description of the Related Art The shape of a wafer obtained by cutting a semiconductor ingot (round shape), a quartz ingot (round shape, a square shape), etc. with a wire saw has a difference in thickness at the start and end of cutting. As shown in 4-a), it tends to be wedge-shaped,
It is thin at the beginning of cutting and thick at the end. Further, the waviness of the surface also tends to be arcuate or corrugated as shown in FIG. This phenomenon has been analyzed from various directions such as deterioration of abrasive grains in the abrasive grain slurry, cutting speed, roller displacement, etc., but no definitive analysis results have been obtained yet. However, paying attention to the waviness shape in FIG. 4-a), there is a characteristic that all the cut wafers are warped in the same direction, and it can be inferred that this is caused by the displacement (or expansion / contraction) of the rollers. In other words, the amount of displacement of the roller (based on the length of the roller at the start of cutting, referred to as the amount of expansion and contraction of the length during cutting) at the start of cutting and during cutting is different for some reason, resulting in a wavy state. It is speculated that
【0003】[0003]
【発明が解決しようとする課題】このローラー変位が起
こる原因を究明していくうちに、砥粒スラリー温度が切
断時に急激に上昇することが判明した。これは、ワイヤ
ーとインゴットとの摩擦熱により発熱したもので、例え
ば切断開始前の砥粒スラリー温度が26℃であったもの
が、切断開始と同時に27℃まで上昇した。これまでの再
現実験の結果、ポリエチレン製のローラーで17μm/℃
/26〜27℃の伸びが確認されているため、わずかな温度
変化でもローラーは伸縮する。このローラーの伸縮(変
位)によって、うねり形状が決まるものと考えられる。While investigating the cause of this roller displacement, it became clear that the temperature of the abrasive grain slurry rose sharply during cutting. This was generated by frictional heat between the wire and the ingot. For example, the abrasive grain slurry temperature before the start of cutting was 26 ° C, but it increased to 27 ° C at the same time as the start of cutting. As a result of the reproduction experiment so far, it is 17 μm / ° C with a polyethylene roller.
Since the elongation of / 26-27 ℃ is confirmed, the roller expands and contracts even with a slight temperature change. It is considered that the waviness is determined by the expansion and contraction (displacement) of the roller.
【0004】また、丸形インゴットでは切断径が切断の
進行と共に変化して行くので、発熱量も時間と共に変動
する。この時のローラー変位を経時的に観察すると図5
のようになり、ウエーハのうねり形状に対応しているの
が判る。通常ワイヤーソーでは、図2のように砥粒スラ
リー12の温度を一定に保つためにスラリーをスラリー
タンク6と冷却用熱交換器10と間を循環させ、槽温温
度センサー9により温度管理を行なっているが、この急
激な発熱量の変化には対応しきれていない。そこで本発
明の目的はこの急激な温度変化を直ちに検出して砥粒ス
ラリー温度上昇を抑え、表面うねり、厚さのばらつきの
少ない高精度ウエーハの製造方法を提供しようとするも
のである。Further, since the cutting diameter of a round ingot changes as the cutting progresses, the heat generation amount also changes with time. When the roller displacement at this time is observed with time, FIG.
It can be seen that it corresponds to the waviness shape of the wafer. In a normal wire saw, the slurry is circulated between the slurry tank 6 and the cooling heat exchanger 10 in order to keep the temperature of the abrasive grain slurry 12 constant as shown in FIG. However, it has not been able to cope with this sudden change in the calorific value. Therefore, an object of the present invention is to immediately detect this rapid temperature change to suppress the temperature rise of the abrasive grain slurry, and to provide a method for producing a highly accurate wafer with less surface waviness and thickness variation.
【0005】[0005]
【課題を解決するための手段】本発明者等は、かかる課
題を解決するためにワイヤーソーのローラーの温度管理
方法を検討し、幾多の試験を重ねて条件を精査し本発明
に到達したもので、その要旨は、ワイヤーソーによりイ
ンゴットを切断してウエーハを製造する方法において、
ワイヤーソーのローラー表面直近の温度を制御すること
を特徴とするウエーハの製造方法、特にはワイヤーソー
のローラー表面直近の温度制御が、温度制御された砥粒
スラリーを該ローラー表面に掛け流しすることからな
り、さらに砥粒スラリー温度制御用温度センサーをロー
ラー表面付近の位置に設置することからなるウエーハの
製造方法にある。Means for Solving the Problems The inventors of the present invention have studied the temperature control method of the roller of the wire saw in order to solve the above-mentioned problems, and conducted many tests to scrutinize the conditions to arrive at the present invention. So, the gist is in the method of manufacturing the wafer by cutting the ingot with a wire saw,
A method for manufacturing a wafer, characterized in that the temperature of the roller surface of the wire saw is controlled, and particularly, the temperature control of the roller surface of the wire saw is controlled, and a temperature-controlled abrasive slurry is flowed over the roller surface. And a temperature sensor for controlling the temperature of the abrasive grain slurry is installed at a position near the surface of the roller.
【0006】以下、本発明を図面に基づいて詳細に説明
する。従来のワイヤーソーでは図2に示した様に、スラ
リータンク6内の槽温温度センサ−9で砥粒スラリー1
2の温度を管理し、また砥粒スラリーのノズル4の位置
がローラー2とインゴット3の中間であるため、ワイヤ
ー1とインゴット3との摩擦熱により上昇したローラー
2付近の砥粒スラリー温度は実測されていなかった。ス
ラリー受けタンク11や戻りの配管に熱が吸収されてし
まうため、スラリータンク内へ戻った時には実際より低
くなっている。このため砥粒スラリーの供給温度(非測
定)と戻り温度との間に温度差が生じ、実際の発熱量の
変化に追随できていない。特に、丸形インゴットでは切
断径がワイヤーソーの位置(上下する)によって変化
し、実際はそれに比例してローラー直近での砥粒スラリ
ー温度が変化し、ひいてはローラーの伸縮が起こってい
るのに、ローラー直近での砥粒スラリー温度を測定して
いないためこの温度変化に温度制御が追随できず、従っ
てローラーの伸縮の大きさに比例して切断精度が悪化し
ていることになる。The present invention will be described below in detail with reference to the drawings. In the conventional wire saw, as shown in FIG. 2, the bath temperature sensor 9 in the slurry tank 6 is used for the abrasive grain slurry 1
2 is controlled, and since the position of the nozzle 4 for the abrasive grain slurry is between the roller 2 and the ingot 3, the temperature of the abrasive grain slurry near the roller 2 increased by the frictional heat between the wire 1 and the ingot 3 is measured. Was not done. Since the heat is absorbed by the slurry receiving tank 11 and the return pipe, the temperature is lower than the actual value when returning to the inside of the slurry tank. For this reason, a temperature difference occurs between the supply temperature (non-measurement) of the abrasive grain slurry and the return temperature, and it is not possible to follow the actual change in the heat generation amount. In particular, in a round ingot, the cutting diameter changes depending on the position of the wire saw (moves up and down), and in fact, the temperature of the abrasive slurry near the roller changes in proportion to it, which in turn causes the roller to expand and contract, Since the temperature of the latest abrasive slurry has not been measured, the temperature control cannot follow this temperature change, and therefore the cutting accuracy deteriorates in proportion to the expansion and contraction of the roller.
【0007】本発明の最大の特徴は、図1に示した様
に、ある設定温度に温度制御された砥粒スラリー12を
直接ローラー2に掛け流し、ローラー直下で温度センサ
ー5により温度制御を行う方法にあり、インゴット3と
ワイヤー1との発熱により砥粒スラリーの温度が上昇し
たことが検出されれば直ちにスラリータンク6から熱交
換器10で冷却された砥粒スラリーがスラリー供給ポン
プ8によって供給され、タイムラグなく迅速な温度管理
が行える。この場合、高速回転するローラーの発熱を直
接ローラーにセンサーを接触させて計測することは出来
ないので、図3に示したようにローラー下端から5cm以
内のワイヤーを避けた直近に温度センサーを設置して間
接的に測定することとした。これにより、スラリー受け
11や戻り配管による吸熱は起こらず、より実際に近い
計測値になる。従って、オン−オフ制御の場合は、冷却
スラリー供給弁15を小刻みにオン−オフすれば、図6
に示したような温度制御曲線となり、ローラー直下での
温度管理の方がスラリータンク内温度管理に比較して温
度変化率は極めて小さく、ローラー変位の安定化が達成
され、切断精度が向上することになる。The greatest feature of the present invention is that, as shown in FIG. 1, the abrasive grain slurry 12 whose temperature is controlled to a certain set temperature is directly applied to the roller 2, and the temperature is controlled by the temperature sensor 5 directly below the roller. In the method, as soon as it is detected that the temperature of the abrasive grain slurry has risen due to the heat generated by the ingot 3 and the wire 1, the abrasive grain slurry cooled by the heat exchanger 10 is supplied from the slurry tank 6 by the slurry supply pump 8. Therefore, quick temperature control can be performed without time lag. In this case, since it is not possible to measure the heat generated by the roller rotating at high speed by directly contacting the sensor with the roller, as shown in Fig. 3, install a temperature sensor in the immediate vicinity avoiding the wire within 5 cm from the lower end of the roller. We decided to measure indirectly. As a result, heat absorption by the slurry receiver 11 and the return pipe does not occur, and the measured value is closer to the actual value. Therefore, in the case of on-off control, if the cooling slurry supply valve 15 is turned on and off in small increments, the cooling slurry supply valve 15 shown in FIG.
The temperature control curve is as shown in Fig. 2, and the temperature control just below the roller has a much smaller temperature change rate than the temperature control inside the slurry tank, stabilizing the roller displacement and improving cutting accuracy. become.
【0008】さらに、温度制御精度を上げるために供給
スラリー温度を設定温度± 0.5〜 1.0℃としてローラー
直下での温度上昇値検出を容易とすることも出来る。ま
た、温度制御に比例制御方式、カスケード方式を採用し
てウエーハに要求される精度に応じた高精度温度制御方
式を採っても良い。砥粒スラリーノズルの本数、配置も
考慮すべき要因で、図3に示したように絶対数の増加
(2本から4本に)、ローラーとインゴットの中間に2
ケ所からローラー直上2か所とローラーとインゴットの
中間2か所に増設して、冷却効率の向上を図った。Further, in order to improve the temperature control accuracy, the temperature of the slurry supplied can be set to a set temperature ± 0.5 to 1.0 ° C. to easily detect the temperature rise value just below the roller. Further, a proportional control method or a cascade method may be adopted for temperature control, and a high precision temperature control method according to the accuracy required for the wafer may be adopted. The number and arrangement of the abrasive grain slurry nozzles should also be taken into consideration. As shown in FIG. 3, the absolute number is increased (from 2 to 4), and 2 is placed between the roller and the ingot.
The cooling efficiency has been improved by adding two locations directly above the rollers and two locations between the rollers and the ingot.
【0009】[0009]
【実施例】以下、本発明の実施態様を実施例を挙げて具
体的に説明するが、本発明はこれらに限定されるもので
はない。 (実施例1〜3、比較例)日平トヤマ(株)製のマルチ
ワイヤーソーを使用した。被切断材は丸形合成石英イン
ゴットとし、砥粒スラリーはSiC 砥粒(GP#600: 信濃電
気精錬(株)製)とオイル(PS-LW-1:パレス化学(株)
製)を混合比1.4:1で、ワイヤーは 200μmφのピアノ
線を使用した。運転条件としては、切断速度を 20mm/Hr
で一定とし、ワイヤー速度も 500m/minで一定とした。
新線供給量についてはワイヤー摩擦量が10μm以下にな
るよう表1に示す値で運転した。スラリー供給ポンプ8
の吐出量を 200リットル/min. 、熱交換ポンプ吐出量を 130
リットル/min. とし、熱交換器には冷媒として12℃の純水を
70リットル/min. 供給した。砥粒スラリーノズルは図3に示
すように4本とし、ワイヤー1に2本ならびローラー2
に2本とし、その両方に掛け流した。温度センサーの位
置は実施例ではローラー直下3、4、5cmとし、夫々実
施例1、2および3とした。また比較例では温度センサ
ーの位置をスラリータンク内とした以外は実施例と同一
条件で切断した。温度センサーは白金測温抵抗体を使用
した。表1に丸形インゴットの切断条件とその結果を示
す。うねり、厚さのばらつき共に向上した。EXAMPLES The embodiments of the present invention will be specifically described below with reference to examples, but the present invention is not limited thereto. (Examples 1 to 3, Comparative Example) A multi-wire saw manufactured by Nippira Toyama Co., Ltd. was used. The material to be cut is a round synthetic quartz ingot, and the abrasive grain slurry is SiC abrasive grains (GP # 600: Shinano Electric Refining Co., Ltd.) and oil (PS-LW-1: Palace Chemical Co., Ltd.)
(Manufactured) was used with a mixing ratio of 1.4: 1, and a 200 μmφ piano wire was used. The operating condition is a cutting speed of 20 mm / Hr.
And the wire speed was also constant at 500 m / min.
Regarding the new wire supply amount, the values shown in Table 1 were operated so that the wire friction amount was 10 μm or less. Slurry supply pump 8
Discharge rate of 200 liters / min., Heat exchange pump discharge rate of 130
Liter / min., And pure water at 12 ℃ is used as a refrigerant in the heat exchanger.
Supplied at 70 l / min. As shown in FIG. 3, the number of abrasive grain slurry nozzles is four, two for wire 1 and two for roller 2.
It was made into two, and it flowed over both. The position of the temperature sensor was 3, 4, 5 cm just below the roller in the examples, and the positions were set as the examples 1, 2, and 3, respectively. Further, in the comparative example, cutting was performed under the same conditions as in the example except that the position of the temperature sensor was in the slurry tank. A platinum resistance thermometer was used as the temperature sensor. Table 1 shows the cutting conditions for round ingots and the results. Both waviness and thickness variation are improved.
【0010】[0010]
【表1】 [Table 1]
【0011】[0011]
【発明の効果】本発明によれば、ワイヤーソーのローラ
ー変位を抑制し、安定化することによって被切断インゴ
ットを切断して得られるウエーハの表面うねりと厚さの
ばらつきを抑制し、高精度ウエーハを製造することがで
き、産業上その利用価値は極めて高い。According to the present invention, by suppressing the roller displacement of the wire saw and stabilizing it, the surface waviness and the thickness variation of the wafer obtained by cutting the ingot to be cut are suppressed, and a high precision wafer is obtained. Can be manufactured, and its utility value is extremely high in industry.
【図1】本発明によるワイヤーソー温度制御方式を示す
説明図である。FIG. 1 is an explanatory diagram showing a wire saw temperature control method according to the present invention.
【図2】従来の方法によるワイヤーソー温度制御方式を
示す説明図である。FIG. 2 is an explanatory diagram showing a conventional wire saw temperature control method.
【図3】本発明実施例の砥粒スラリーノズルおよび温度
センサーの位置を示す詳細説明図である。FIG. 3 is a detailed explanatory view showing positions of an abrasive grain slurry nozzle and a temperature sensor according to an embodiment of the present invention.
【図4】ワイヤーソーにより切断されたウエーハのa)
断面図 、b)直径方向の各位置における表面うねり形
状、弓形、波形を示す説明図である。FIG. 4 a) of a wafer cut by a wire saw
Sectional drawing, b) It is explanatory drawing which shows the surface waviness shape in each position of a diameter direction, a bow shape, and a waveform.
【図5】丸形インゴットと角形インゴットを切断した場
合のローラー変位の経時変化を示す説明図である。FIG. 5 is an explanatory diagram showing changes over time in roller displacement when a round ingot and a square ingot are cut.
【図6】丸形インゴットを切断した場合、砥粒スラリー
の実施例と比較例の温度管理状態を示す説明図である。FIG. 6 is an explanatory diagram showing a temperature control state of an abrasive grain slurry of Examples and Comparative Examples when a round ingot is cut.
1 ワイヤー 2 ローラ
ー 3 被切断インゴット 4 砥粒ス
ラリーノズル 5 温度センサー 6 スラリ
ータンク 7 攪拌機 8 スラリ
ー供給ポンプ 9 槽温温度センサー 10 熱交換
器 11 スラリー受けタンク 12 砥粒
スラリー 13 熱交換ポンプ 14 スラ
リー戻しポンプ 15 冷却スラリー供給弁1 Wire 2 Roller 3 Cut Ingot 4 Abrasive Grain Slurry Nozzle 5 Temperature Sensor 6 Slurry Tank 7 Stirrer 8 Slurry Supply Pump 9 Tank Temperature Sensor 10 Heat Exchanger 11 Slurry Receiving Tank 12 Abrasive Grain Slurry 13 Heat Exchange Pump 14 Slurry Return Pump 15 Cooling slurry supply valve
Claims (3)
ウエーハを製造する方法において、ワイヤーソーのロー
ラー表面直近の温度を制御することを特徴とするウエー
ハの製造方法。1. A method for manufacturing a wafer by cutting an ingot with a wire saw, wherein the temperature of the wire saw in the vicinity of the roller surface is controlled.
御が、温度制御された砥粒スラリーを該ローラー表面に
掛け流しすることからなる請求項1に記載のウエーハの
製造方法。2. The method for producing a wafer according to claim 1, wherein the temperature control of the wire saw in the vicinity of the roller surface comprises flowing the temperature-controlled abrasive grain slurry over the roller surface.
ーラー表面付近である位置に設置することからなる請求
項1または2に記載のウエーハの製造方法。3. The method for producing a wafer according to claim 1, wherein a temperature sensor for controlling the temperature of the abrasive grain slurry is provided at a position near the surface of the roller.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14769493A JP2967896B2 (en) | 1993-06-18 | 1993-06-18 | Wafer manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14769493A JP2967896B2 (en) | 1993-06-18 | 1993-06-18 | Wafer manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH071442A true JPH071442A (en) | 1995-01-06 |
JP2967896B2 JP2967896B2 (en) | 1999-10-25 |
Family
ID=15436159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14769493A Expired - Fee Related JP2967896B2 (en) | 1993-06-18 | 1993-06-18 | Wafer manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2967896B2 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0798091A2 (en) * | 1996-03-26 | 1997-10-01 | Shin-Etsu Handotai Company Limited | Wire saw and method of slicing a cylindrical workpiece, e.g. an ingot |
US6006738A (en) * | 1996-08-13 | 1999-12-28 | Memc Japan, Ltd. | Method and apparatus for cutting an ingot |
WO2000038023A1 (en) * | 1998-12-22 | 2000-06-29 | Deutsche Solar Gmbh | Method for controlling a sawing process |
WO2000043162A1 (en) * | 1999-01-20 | 2000-07-27 | Shin-Etsu Handotai Co., Ltd. | Wire saw and cutting method |
SG81916A1 (en) * | 1996-08-13 | 2001-07-24 | Memc Electronic Materials | Method for cutting an ingot |
EP2508317A1 (en) | 2011-04-05 | 2012-10-10 | Siltronic AG | Method for cutting workpiece with wire saw |
JP2013032278A (en) * | 2008-09-08 | 2013-02-14 | Sumitomo Electric Ind Ltd | Method for producing substrate |
EP2586583A1 (en) * | 2011-10-28 | 2013-05-01 | Applied Materials Switzerland Sàrl | Wire saw control system and wire saw |
JP2016203319A (en) * | 2015-04-24 | 2016-12-08 | 株式会社安永 | Wire saw, and manufacturing method of manufacturing plurality of sliced articles from workpiece using wire saw |
US11584037B2 (en) | 2017-12-25 | 2023-02-21 | Shin-Etsu Handotai Co., Ltd. | Wire saw apparatus and method for manufacturing wafer |
-
1993
- 1993-06-18 JP JP14769493A patent/JP2967896B2/en not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0798091A2 (en) * | 1996-03-26 | 1997-10-01 | Shin-Etsu Handotai Company Limited | Wire saw and method of slicing a cylindrical workpiece, e.g. an ingot |
EP0798091B1 (en) * | 1996-03-26 | 2003-05-14 | Shin-Etsu Handotai Company Limited | Wire saw and method of slicing a cylindrical workpiece, e.g. an ingot |
SG81916A1 (en) * | 1996-08-13 | 2001-07-24 | Memc Electronic Materials | Method for cutting an ingot |
US6006738A (en) * | 1996-08-13 | 1999-12-28 | Memc Japan, Ltd. | Method and apparatus for cutting an ingot |
WO2000038023A1 (en) * | 1998-12-22 | 2000-06-29 | Deutsche Solar Gmbh | Method for controlling a sawing process |
EP1097782A4 (en) * | 1999-01-20 | 2005-05-18 | Shinetsu Handotai Kk | Wire saw and cutting method |
EP1097782A1 (en) * | 1999-01-20 | 2001-05-09 | Shin-Etsu Handotai Co., Ltd | Wire saw and cutting method |
US6652356B1 (en) | 1999-01-20 | 2003-11-25 | Shin-Etsu Handotai Co., Ltd. | Wire saw and cutting method |
WO2000043162A1 (en) * | 1999-01-20 | 2000-07-27 | Shin-Etsu Handotai Co., Ltd. | Wire saw and cutting method |
KR100607188B1 (en) * | 1999-01-20 | 2006-08-01 | 신에쯔 한도타이 가부시키가이샤 | Wire saw and cutting method |
JP2013032278A (en) * | 2008-09-08 | 2013-02-14 | Sumitomo Electric Ind Ltd | Method for producing substrate |
EP2508317A1 (en) | 2011-04-05 | 2012-10-10 | Siltronic AG | Method for cutting workpiece with wire saw |
TWI457188B (en) * | 2011-04-05 | 2014-10-21 | Siltronic Ag | Method for cutting workpiece with wire saw |
EP2586583A1 (en) * | 2011-10-28 | 2013-05-01 | Applied Materials Switzerland Sàrl | Wire saw control system and wire saw |
CN103085180A (en) * | 2011-10-28 | 2013-05-08 | 应用材料瑞士有限责任公司 | Wire saw control system and wire saw |
JP2016203319A (en) * | 2015-04-24 | 2016-12-08 | 株式会社安永 | Wire saw, and manufacturing method of manufacturing plurality of sliced articles from workpiece using wire saw |
US11584037B2 (en) | 2017-12-25 | 2023-02-21 | Shin-Etsu Handotai Co., Ltd. | Wire saw apparatus and method for manufacturing wafer |
Also Published As
Publication number | Publication date |
---|---|
JP2967896B2 (en) | 1999-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW546179B (en) | Method for cutting silices from a workpiece | |
US6652356B1 (en) | Wire saw and cutting method | |
JPH071442A (en) | Manufacture of wafer | |
US7953512B2 (en) | Substrate processing system, control method for substrate processing apparatus and program stored on medium | |
JP5492239B2 (en) | Method for slicing a wafer from a workpiece | |
US5269285A (en) | Wire saw and slicing method using the same | |
CN101517711B (en) | Cutting method | |
JP4387361B2 (en) | Multi wire saw | |
JPH08323741A (en) | Wire saw device and work-cutting method | |
JP5231117B2 (en) | Film forming apparatus and film forming method | |
JP6132621B2 (en) | Method for slicing semiconductor single crystal ingot | |
JPH03130367A (en) | Method and device for chemical vapor growth | |
JP2009267159A (en) | Device and method for manufacturing semiconductor wafer | |
JPH05337901A (en) | Thread sawing machine | |
JP2017212268A (en) | Method of cutting monocrystalline ingot | |
JP2008078474A (en) | Cutting method and manufacturing method of epitaxial wafer | |
KR102572472B1 (en) | Method for producing semiconductor wafers by means of a wire saw, wire saw and semiconductor wafer of monocrystalline silicon | |
JP5449435B2 (en) | Method for slicing a wafer from a workpiece | |
WO2013079683A1 (en) | Systems and methods for controlling surface profiles of wafers sliced in a wire saw | |
US20150158203A1 (en) | Method for slicing wafers from a workpiece by means of a wire saw | |
US20130144421A1 (en) | Systems For Controlling Temperature Of Bearings In A Wire Saw | |
CN103764345A (en) | Resin-coated saw wire and cut body | |
US20130139801A1 (en) | Methods For Controlling Displacement Of Bearings In A Wire Saw | |
TWI682059B (en) | Vapor phase film deposition apparatus | |
JP2022066689A (en) | Method of cutting silicon carbide single crystal ingot |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090820 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090820 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20100820 |
|
LAPS | Cancellation because of no payment of annual fees |