JPH07142514A - Growth of ii-vi compound semiconductor - Google Patents

Abstract

PURPOSE:To grow a high-quality p-type II-VI compound semiconductor with highly controlled doping by using as a p-type dopant a compound constituted of N and at least one element selected from a group including Na, P, and S. CONSTITUTION:A p-type II-VI compound semiconductor is grown by vapor-phase epitaxy. Especially, a compound which is constituted of N and at least one element selected from a group including Na, P, S, Se, Zn, Mg and Li is used as a p-type dopant. For example, N is introduced as a p-type impurity in each of a p-type ZnSe optical waveguide layer 6, a p-type Zn1-pMgpSqSe1-q clad layer 7, and a p-type ZnSvSe1-v layer 8. Since N, which is a p-type impurity for the II-VI compound semiconductor, can be introduced in these layers, doping can be done more stably than the conventional N plasma doping method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a II-VI group compound semiconductor, which is suitable for application to, for example, the production of a semiconductor laser which can emit light at a short wavelength using a II-VI group compound semiconductor. Is.

[0002]

2. Description of the Related Art In recent years, in order to improve the recording density of optical discs and the resolution of laser printers, there is an increasing demand for semiconductor lasers capable of emitting light at short wavelengths, and research aimed at realizing them has been made. It is active.

A II-VI group compound semiconductor is promising as a material used for producing a semiconductor laser capable of emitting light at such a short wavelength. In particular, the ZnMgSSe-based compound semiconductor, which is a quaternary II-VI group compound semiconductor, is
It is known to be suitable as a material for a clad layer and an optical waveguide layer when a blue or green emitting semiconductor laser having a wavelength of 400 to 550 nm is formed on a GaAs substrate (for example, Electron. Lett. 28 (1992). ) 1798).

Conventionally, the growth of II-VI group compound semiconductors has been carried out exclusively by the molecular beam epitaxy (MBE) method. Then, as a method of doping a p-type impurity in growing a p-type II-VI group compound semiconductor, for example, p-type ZnSe, high-reactivity active nitrogen is generated by high-frequency plasma discharge, and this is added to p The method of doping as a type impurity (hereinafter referred to as “N plasma doping method”) is the mainstream.

[0005]

However, the above-described N plasma doping method has the following drawbacks.
That is, first, since N plasma is generated by discharge and is unstable, it is difficult to perform doping stably, and thus the controllability of doping is poor. Second,
Since N gas is used as the p-type dopant, the introduction of this N gas may deteriorate the degree of vacuum in the growth chamber evacuated to an ultrahigh vacuum, resulting in deterioration of the quality of the grown crystal.

Therefore, an object of the present invention is to provide a method for growing a II-VI compound semiconductor capable of growing a high-quality p-type II-VI compound semiconductor with high doping controllability. .

[0007]

In order to achieve the above object, the first invention of the present invention is to grow a p-type II-VI compound semiconductor by a vapor phase growth method II.
In the method for growing a group VI compound semiconductor, N and Na,
A compound comprising at least one element selected from the group consisting of P, S, Se, Zn, Mg and Li is used as a p-type dopant to grow a p-type II-VI compound semiconductor. Is.

Here, N and Na, P, S, Se, Zn,
Specific examples of the compound composed of at least one element selected from the group consisting of Mg and Li include N ₃ N
a, N ₅ P ₃ , NS, NS ₂ , NS ₈ , NS ₁₁ , N ₂ S
₃ , N ₂ S ₁₇ , N ₆ S ₅ , NSe, N ₂ Se ₃ , N ₂ Z
Examples include n ₃ , N ₆ Zn, Na ₃ N, Li ₃ N, N ₂ Mg ₃ . In this case, N contained in these compounds
Becomes a p-type impurity. These compounds preferably have a purity of 99.99 to 99.999% or higher, and have a Group II element such as Zn, Mg, S, or Se or VI.
A material that does not contain a group element as an impurity is used. Further, these compounds are in a solid or liquid state at room temperature.

A second invention of the present invention is the method for growing a II-VI group compound semiconductor, wherein a p-type II-VI group compound semiconductor is grown by a vapor phase growth method.
A compound of a and at least one element selected from the group consisting of P, S, Se, Zn and N is used as a p-type dopant to grow a p-type II-VI compound semiconductor.

Specific examples of the compound composed of Na and at least one element selected from the group consisting of P, S, Se, Zn and N include NaP, NaPS,
NaS, NaS ₂ , Na ₂ S, Na ₂ S ₅ , Na ₂ S ₂
Zn, Na ₆ S ₄ Zn, NaSe, Na ₂ Se, NaZ
Examples include n ₁₃ , NaN ₃ , and Na ₃ N. In this case, Na contained in these compounds becomes a p-type impurity. These compounds are preferably 99.99 to
It has a purity of 99.999% or more, and Zn, Mg,
A material containing no group II element or group VI element such as S or Se is used. Further, these compounds are in a solid or liquid state at room temperature.

In the II-VI group compound semiconductor growth method according to the first and second aspects of the present invention, the vapor phase growth method is, specifically, MBE method or metalorganic chemical vapor deposition method. (MOCVD) method can be used.

In the method for growing a II-VI group compound semiconductor according to the first and second aspects of the present invention, the II-VI group compound semiconductor to be grown is, for example,
ZnSe, ZnTe, ZnSSe, ZnCdSe, Zn
For example, MgSSe.

[0013]

According to the method for growing a II-VI group compound semiconductor according to the first aspect of the present invention, N, Na, P, S and S are added.
Since a compound including at least one element selected from the group consisting of e, Zn, Mg, and Li can be used as a p-type dopant, N that is a p-type impurity for a II-VI group compound semiconductor can be doped. Doping can be performed more stably than the conventional N plasma doping method using unstable plasma, and therefore the controllability of doping is high. MB as a vapor phase growth method
In the case of using the E method, unlike the conventional N plasma doping method, there is no introduction of gas into the growth chamber evacuated to ultra-high vacuum, so there is no problem of deterioration of the vacuum degree of the growth chamber during doping. Therefore, it is possible to prevent the deterioration of the quality of the grown crystal due to the deterioration of the degree of vacuum.

According to the method for growing a II-VI group compound semiconductor according to the second aspect of the present invention, Na, P, S and S are added.
Using a compound with at least one element selected from the group consisting of e, Zn and N as a p-type dopant II
Since Na, which is a p-type impurity, can be doped to the -VI group compound semiconductor, I according to the first invention
Similar to the method of growing a group I-VI compound semiconductor, the controllability of the doping is high, and the deterioration of the quality of the grown crystal due to the doping can be prevented.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to manufacture of a semiconductor laser will be described below with reference to the drawings.
For convenience of explanation, the structure of the semiconductor laser manufactured by the method according to the embodiment of the present invention will be described first.

1 and 2 show this semiconductor laser, FIG. 1 is a sectional view perpendicular to the cavity length direction, and FIG. 2 is a sectional view parallel to the cavity length direction. Here, this semiconductor laser is a so-called SCH (Separated Confinem).
ent Heterostructure) structure.

As shown in FIGS. 1 and 2, in this semiconductor laser, for example, Cl as an n-type impurity is deposited on an n-type GaAs substrate 1 having a (100) plane orientation doped with Si as an n-type impurity. Doped n-type Z
nSe buffer layer 2, an n-type Cl doped as n-type impurity _{Zn 1-p Mg p S q} Se 1-q cladding layer 3, for example, Cl doped as n-type impurity is an n-type Z
nSe optical waveguide layer 4, active layer 5, for example p-type ZnSe optical waveguide layer 6 doped with N as a p-type impurity, for example p _- type Zn _1-p Mg _p S _q doped with N as a p-type impurity.
A Se _1-q cladding layer 7, a p-type ZnS _v Se _1-v layer 8 doped with N as a p-type impurity, and a p-type ZnSe contact layer 9 doped with N as a p-type impurity, for example, are sequentially stacked. There is.

In this case, the upper layers of the p-type ZnSe contact layer 9 and the p-type ZnS _v Se _1-v layer 8 are patterned in a stripe shape. The width of this stripe portion is, for example, 5 μm.

On the p-type ZnS _v Se _1-v layer 8 other than the above-mentioned stripe portion, for example, a thickness of 300 is provided.
An insulating layer 10 made of an alumina (Al ₂ O ₃ ) film having a thickness of 10 nm is formed. Then, stripe-shaped p-type ZnS
A p-side electrode 11 is formed on the e-contact layer 9 and the insulating layer 10. A portion of the p-side electrode 11 in contact with the p-type ZnSe contact layer 9 serves as a current passage.
Here, the p-side electrode 11 has, for example, a thickness of 1
Pd film of 0 nm, Pt film of 100 nm and thickness of 3
Au / Pt / having a structure in which an Au film of 00 nm is sequentially laminated.
A Pd electrode is used. On the other hand, an n-side electrode 12 such as an In electrode is in contact with the back surface of the n-type GaAs substrate 1.

In this semiconductor laser, so-called end face coating is applied. That is, as shown in FIG. 2, of the pair of resonator end faces perpendicular to the cavity length direction, the front end face from which the laser light is extracted has a 74 nm thick Al ₂ O ₃ film 13 and a 31 nm thick Si film. Membrane 1
Of a pair of resonator end faces perpendicular to the cavity length direction, the end face on the rear side from which laser light is not extracted is a 74 nm thick Al ₂ O ₃ film 1
3 and a Si film 14 having a thickness of 31 nm are laminated for two cycles to coat a multilayer film. Here, Al ₂ O ₃ film 1
3 and the Si film 14 has a thickness such that the optical distance obtained by multiplying the refractive index by the multilayer film is 1 / the oscillation wavelength of the laser light.
It is selected to be equal to 4 (here, the case where the oscillation wavelength is 523.5 nm is considered). In this case, the reflectance of the front end face is 70%, and the reflectance of the rear end face is 95%.

The active layer 5 preferably has a thickness of 2 to 20 nm,
For example, it has a single quantum well structure composed of an i-type Zn _1-z Cd _z Se quantum well layer having a thickness of 9 nm. In this case, the n-type ZnSe optical waveguide layer 4 and the p-type ZnSe optical waveguide layer 6 form a barrier layer.

The Mg composition ratio p of the n-type Zn _1-p Mg _p S _q Se _1-q cladding layer 3 and the p-type Zn _1-p Mg _p S _q Se _1-q cladding layer 7 is 0.09, for example. The S composition ratio q is, for example, 0.18, and the band gap E _{g at} that time is
Is about 2.94 eV at 77K. The n-type Zn _1-p Mg _p S _q Se _1-q cladding layer 3 and the p-type Z having the Mg composition ratio p = 0.09 and the S composition ratio q = 0.18.
The n _1-p Mg _p S _q Se _1-q cladding layer 7 is lattice-matched with GaAs. In addition, i-type Zn _1-z C constituting the active layer 5
The Cd composition ratio z of the d _z Se quantum well layer is, for example, 0.19, and the band gap E _{g at} that time is 77 K, which is about 2.
It is 54 eV. In this case, n-type Zn _1-p Mg _p S _q S
e _1-q clad layer 3 and p-type Zn _1-p Mg _p S _q Se
_I- type Zn _1-z C constituting the _1-q clad layer 7 and the active layer 5
The difference Δg in the band gap E _g between the d _z Se quantum well layer and Δ
E _g is 0.40 eV. The value of the band gap E _g at room temperature can be obtained by subtracting 0.1 eV from the value of the band gap E _g at 77K.

In this case, n-type Zn _1-p Mg _p S _q Se
The thickness of the _1-q cladding layer 3 is 1.5μm example, an impurity concentration N _D -N _A (N _D: donor concentration, N _A: acceptor concentration) is, for example, 5 × 10 ¹⁷ cm ^-3. n-type Z
nSe thickness of the optical waveguide layer 4 is 80nm for example, an impurity concentration is N _D -N _A, for example, 5 × 10 ¹⁷ cm ^-3.
The thickness of the p-type ZnSe optical waveguide layer 6 is, for example, 80 nm.
And the impurity concentration is N _A -N _D , for example, 5 × 10 ¹⁷ c
m ^-3 . The p-type Zn _1-p Mg _{p Sq} Se _1-q cladding layer 7 has a thickness of, for example, 0.8 μm, and has an impurity concentration of N.
For example a _A -N _D is 2 × 10 ¹⁷ cm ^-3. p-type ZnS
_v The thickness of the Se _1-v layer 8 is 0.8μm example, the impurity concentration is N _A -N _D, for example, 8 × 10 ¹⁷ cm ^-3.
The thickness of the p-type ZnSe contact layer 9 is, for example, 45 nm, the impurity concentration N _A -N _D, for example, 8 × 10 ¹⁷ cm
^-3 .

The thickness of the n-type ZnSe buffer layer 2 has a slight lattice mismatch between ZnSe and GaAs. Therefore, the n-type ZnSe buffer layer 2 is caused by this lattice mismatch. In order to prevent dislocation from occurring during the epitaxial growth of the layer 2 and each layer thereon, it is selected to be sufficiently smaller than the critical film thickness of ZnSe (up to 100 nm), but here it is, for example, 33 nm.

The cavity length L of this semiconductor laser is selected to be, for example, 640 μm, and the width in the direction perpendicular to the cavity length direction is selected to be, for example, 400 μm.

A p-type ZnS _v Se _1-v layer 8 laminated on the p-type Zn _1-p Mg _p S _q Se _1-q clad layer 7 may be p-type Zn _1-p Mg _p Function as second p-type clad layer added to S _q Se _1-q clad layer 7, p-type Z
n _1-p Mg _p S _q Se _{1-q A} function to obtain lattice matching with the cladding layer 7 and to prevent a short circuit due to solder creep-up at the chip end face when mounting a laser chip on a heat sink described later. It has one or more of the functions as a spacer layer. p-type Zn
_1-p Mg _p S _q Se _{1-q Although} there is a trade-off with the Mg composition ratio p and the S composition ratio q of the cladding layer 7, this p-type ZnS
The S composition ratio v of the _v Se _1-v layer 8 is selected within the range of 0 <v ≦ 0.1, preferably 0.06 ≦ v ≦ 0.08, and in particular,
The optimum S composition ratio v for achieving lattice matching with the p-type Zn _1-p Mg _{p Sq} Se _1-q cladding layer 7 is 0.06.

As described above, p-type Zn _1-p Mg _p S _q Se
_By laminating the p-type ZnS _v Se _1-v layer 8 on the _1-q clad layer 7, various advantages as described below can be obtained. That is, when the p-type ZnS _v Se _1-v layer 8 is used as the second p-type cladding layer, the p-type is not as easy to grow epitaxially as the binary or ternary II-VI compound semiconductor. Zn _1-p Mg _p S _q Se
The thickness of the _1-q clad layer 7 can be minimized, and accordingly, the manufacturing of the semiconductor laser is correspondingly facilitated. If the p-type cladding layers have the same total thickness, p
Compared to the case where the p-type cladding layer is composed of only the p-type Zn _1-p Mg _p S _q Se _1-q cladding layer 7, the p-type cladding layer has the p-type Zn _1-p Mg _p S _q Se _1-q cladding. Layer 7 and p-type Z
The resistance of the p-type clad layer can be made lower when it is composed of the nS _v Se _1-v layer 8. Particularly, as described above, for example, the thickness is about 0.8 μm and N _A -N _D is 2 × 10 5.
The p-type Zn _1-p Mg _{p Sq} Se _1-q cladding layer 7 having a thickness of about ¹⁷ cm ^{-3, the} thickness of about 0.8 μm, and the N _A -N _D of 8 ×.
When the p-type ZnS _v Se _1-v layer 8 of about 10 ¹⁷ cm ⁻³ is used, the resistance of the entire p-type cladding layer should be sufficiently low without deteriorating the optical confinement property and the carrier confinement property. You can

When the p-type ZnSe contact layer 9 is directly laminated on the p-type Zn _1-p Mg _{p Sq} Se _1-q cladding layer 7, a lattice mismatch exists between these layers, resulting in crystallinity. Deterioration is likely to occur, but p-type Zn _1-p Mg _p S
A p-type ZnS _v Se _1-v layer 8 having a lattice constant substantially equal to that of the _q Se _1-q clad layer 7 is laminated, and the p-type Zn
Since the p-type ZnSe contact layer 9 is laminated on the S _v Se _1-v layer 8, the crystallinity of these p-type ZnS _v Se _1-v layer 8 and p-type ZnSe contact layer 9 should be improved. You can

Further, by making the thickness of the p-type ZnS _v Se _1-v layer 8 sufficiently large, the solder used for mounting the laser chip on the heat sink crawls the end face of the laser chip. It is possible to effectively prevent the p-side and the n-side from going up and being short-circuited.
That is, as shown in FIG. 3, the laser chip is p-side down with the p-side electrode 11 facing down.
When mounting on 1, the solder 42 exists only between the laser chip and the heat sink 41 as shown by the solid line, but there is no problem if the soldering is not performed well, so that one end of the laser chip end face is used. Even if the solder 42 crawls linearly as shown by the chain line, p
Since the thickness of the type ZnS _v Se _1-v layer 8 is sufficiently large, the solder 42 crawled up on the end face of the laser chip
Exceeds the active layer 5 and the n-type ZnSe optical waveguide layer 4 and the n-type ZnSe
It is possible to prevent the _1-p Mg _p S _q Se _1-q cladding layer 3 from reaching the clad layer 3 and the like, and normally to prevent the solder 42 from creeping up far before the active layer 5.
As a result, when mounting the laser chip, the p
It is possible to prevent the side and the n side from being short-circuited, thus facilitating mounting of the laser chip.

Next, a method for manufacturing the semiconductor laser shown in FIGS. 1 and 2 configured as described above will be described.

FIG. 4 shows an MBE apparatus used for epitaxially growing the layers forming the laser structure in the method for manufacturing a semiconductor laser according to this embodiment. As shown in FIG. 4, this MBE device has a plurality of molecular beam sources (K cells) in a growth chamber 53 that can be evacuated to an ultrahigh vacuum by an ultrahigh vacuum exhaust device 52 attached via a gate valve 51. 54 and a substrate holder 55 for holding a substrate to be epitaxially grown. Among the plurality of molecular beam sources 54, n-type impurities are supplied in addition to the molecular beam source for supplying the group II element and the group VI element necessary for the growth of the group II-VI compound semiconductor forming the semiconductor laser. A molecular beam source and a molecular beam source for supplying p-type impurities are included.

In order to manufacture this semiconductor laser, first, the n-type GaAs substrate 1 is mounted on the substrate holder 55 in the growth chamber 53 of the MBE apparatus shown in FIG.
s Substrate 1 has a temperature sufficiently higher than the growth temperature, for example, 5
After heating to 80 ° C to clean the surface, this n-type G
The aAs substrate 1 is subjected to a predetermined epitaxial growth temperature, preferably in the range of 250 to 300 ° C., more preferably in the range of 280 to 300 ° C., specifically, for example, 2
The temperature is lowered to 95 ° C. and epitaxial growth is started. That is, the n-type ZnSe buffer layers 2, n are formed on the n-type GaAs substrate 1 by the MBE method using a growth material as described below.
Type Zn _1-p Mg _p S _q Se _1-q clad layer 3, n-type Zn
Se optical waveguide layer 4, active layer 5 composed of i-type Zn _1-z Cd _z Se quantum well layer, p-type ZnSe optical waveguide layer 6, p-type Zn
_1-p Mg _p S _q Se _1-q clad layer 7, p-type ZnS _v S
The e _1-v layer 8 and the p-type ZnSe contact layer 9 are sequentially epitaxially grown.

In the above epitaxial growth by the MBE method, Zn having a purity of 99.9999% was used as the Zn raw material, Mg having a purity of 99.9% was used as the Mg raw material, and 99.9999% ZnS was used as the S raw material. And Se having a purity of 99.9999% is used as the Se raw material.

Further, the n-type ZnSe buffer layer 2 and the n-type Z
n _1-p Mg _p S _q Se _1-q cladding layer 3 and n-type Zn
The doping of Cl as an n-type impurity in the Se optical waveguide layer 4 is performed by using ZnCl ₂ having a purity of 99.9999% as a dopant.

On the other hand, p-type ZnSe optical waveguide layer 6, p-type Zn
_1-p Mg _p S _q Se _1-q clad layer 7, p-type ZnS _v S
The doping of N as a p-type impurity in the e _1-v layer 8 and the p-type ZnSe contact layer 9 is performed by using N ₃ Na, N ₅ P ₃ ,
NS, NS ₂ , NS ₈ , NS ₁₁ , N ₂ S ₃ , N ₂ S ₁₇ ,
N ₆ S ₅ , NSe, N ₂ Se ₃ , N ₂ Zn ₃ , N ₆ Z
A dopant selected from n, Na ₃ N, Li ₃ N, N ₂ Mg _{3 and the} like as needed is used as a dopant.

The p-type ZnSe optical waveguide layer 6, the p-type Zn
_1-p Mg _p S _q Se _1-q clad layer 7, p-type ZnS _v S
When Na is used as the p-type impurity of the e _1-v layer 8 and the p-type ZnSe contact layer 9, the doping is
NaP, NaPS, NaS, NaS ₂ , Na ₂ S, Na
₂ S ₅ , Na ₂ S ₂ Zn, Na ₆ S ₄ Zn, NaSe,
A dopant selected from Na ₂ Se, NaZn ₁₃ , NaN ₃ , Na ₃ N and the like is used as a dopant.

Next, a stripe-shaped resist pattern (not shown) having a predetermined width is formed on the p-type ZnSe contact layer 9.
After the formation of p, the resist pattern is used as a mask for p
The type ZnS _v Se _1-v layer 8 is partially etched in the thickness direction by wet etching. By this, p
-Type ZnSe contact layer 9 and p-type ZnS _v Se _1-v
The upper portion of the layer 8 is patterned into a stripe shape.

Next, an Al ₂ O ₃ film was vacuum-deposited on the entire surface while leaving the resist pattern used for the above-mentioned etching, and this resist pattern was formed on top of this.
It is removed together with the l ₂ O ₃ film (lift-off). As a result, p-type ZnS _v Se _{1-v in the} part other than the stripe part
An insulating layer 10 made of an Al ₂ O ₃ film is formed only on the layer 8.

Next, a Pd film, a Pt film, and an Au film are sequentially vacuum-deposited on the entire surface of the stripe-shaped p-type ZnSe contact layer 9 and the insulating layer 10 to form a p-side electrode 11 composed of an Au / Pt / Pd electrode. Then, the p-side electrode 11 is brought into ohmic contact with the p-type ZnSe contact layer 9 by heat treatment if necessary. On the other hand, n-type Ga
An n-side electrode 12 such as an In electrode is formed on the back surface of the As substrate 1.

After that, the n-type GaAs substrate 1 on which the laser structure is formed as described above is cleaved into, for example, a bar shape having a width of 640 μm to form both resonator end faces, and then the front side of the resonator is formed by vacuum deposition. Al ₂ O ₃ film 13 and Si on the end face
A multi-layered film including the film 14 is formed, and a multi-layered film in which the Al ₂ O ₃ film 13 and the Si film 14 are repeated two cycles is formed on the rear end surface. After the end face coating is applied in this manner, the bar is cleaved into a chip having a width of 400 μm for packaging.

As described above, according to this embodiment, the p-type impurity is doped by using the molecular beam source using the compound containing N as the p-type dopant as described above. While it was difficult to do the doping stably when the conventional N plasma doping method was used, it is possible to do the p-type impurity in a stable manner. Therefore, the doping is performed with high controllability. be able to. Moreover, during this doping,
The degree of vacuum in the growth chamber 53, which is evacuated to the ultrahigh vacuum of the MBE apparatus, does not deteriorate, and thus high quality crystals can be grown.

According to this embodiment, it is possible to realize a semiconductor laser capable of emitting light with a short wavelength. More specifically, for example, it is possible to realize a green-emitting semiconductor laser capable of continuous oscillation at a wavelength of 523.5 nm at room temperature.

Although one embodiment of the present invention has been specifically described above, the present invention is not limited to the above embodiment, and various modifications can be made based on the technical idea of the present invention. .

For example, in the above embodiment, SC
The case where the present invention is applied to the production of a semiconductor laser having an H structure has been described, but the present invention can also be applied to the production of a semiconductor laser having a DH structure (Double Heterostructure). Further, the present invention is
Not only the semiconductor laser but also the light emitting diode can be manufactured. More generally, the present invention can be applied to the manufacture of various semiconductor devices using II-VI group compound semiconductors.

Although the GaAs substrate is used as the compound semiconductor substrate in the above-described embodiment, a GaP substrate or the like may be used as the compound semiconductor substrate.

[0046]

As described above, according to the present invention, a compound comprising N and at least one element selected from the group consisting of Na, P, S, Se, Zn, Mg and Li, or Na and P, S, Se, Zn and N
By using a compound with at least one element selected from the group consisting of as a p-type dopant to grow a p-type II-VI group compound semiconductor, a high-quality p-type II-VI compound semiconductor is obtained. The group compound semiconductor can be grown with high doping controllability.

[Brief description of drawings]

FIG. 1 is a sectional view perpendicular to a cavity length direction of a semiconductor laser manufactured according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view parallel to the cavity length direction of a semiconductor laser manufactured according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a state in which a semiconductor laser manufactured according to an embodiment of the present invention is mounted on a heat sink.

FIG. 4 is a schematic diagram showing an example of an MBE device used for manufacturing a semiconductor laser in one embodiment of the present invention.

[Explanation of symbols]

1 n-type GaAs substrate 2 n-type ZnSe buffer layer 3 n-type Zn _1-p Mg _p S _q Se _1-q cladding layer 4 n-type ZnSe optical waveguide layer 5 active layer 6 p-type ZnSe optical waveguide layer 7 p-type Zn _{1 -p} Mg _p S _q Se _1-q clad layer 8 p-type ZnS _v Se _1-v layer 9 p-type ZnSe contact layer 10 insulating layer 11 p-side electrode 12 n-side electrode 53 growth chamber 54 molecular beam source

Claims (4)

[Claims] 1. A method for growing a II-VI group compound semiconductor in which a p-type II-VI group compound semiconductor is grown by a vapor phase growth method, wherein N and Na, P, S, Se, Zn, Mg are used. And a compound containing at least one element selected from the group consisting of Li and Li as a p-type dopant.
A method for growing a II-VI group compound semiconductor, characterized in that a Group III compound semiconductor is grown. 2. A method for growing a II-VI group compound semiconductor in which a p-type II-VI group compound semiconductor is grown by a vapor phase growth method, which comprises Na and P, S, Se, Zn and N. A method for growing a II-VI group compound semiconductor, wherein a compound with at least one element selected from the group is used as a p-type dopant to grow the p-type II-VI group compound semiconductor. . 3. The method for growing a II-VI group compound semiconductor according to claim 1, wherein the vapor phase growth method is a molecular beam epitaxy method or a metal organic chemical vapor deposition method. 4. The II-VI group compound semiconductor is ZnS.
e, ZnTe, ZnSSe, ZnCdSe or ZnM
It is gSSe, Claim 1, 2 or 3 characterized by the above-mentioned.
The method for growing a II-VI group compound semiconductor described.