JPH07142023A - Parallel scan type ion implantation device - Google Patents

Abstract

PURPOSE:To uniformize the doze distribution by equalizing traveling speeds of ion beam spots over the whole area on a board when a parallel scan type ion is implanted by using a multipole electrostatic deflecting unit. CONSTITUTION:First and second multipole electrostatic deflecting units 6 and 7 are constituted in a geometric similar figure, and the same raster voltage is impressed on mutually corresponding electrodes from a raster voltage digital control device 9. For example, the same deflecting voltage U'=U, V'=V with raster deflecting voltage U, -U, V, -V, 1/2<1/2>. (U+V) or the like obtained by subtracting offset voltage V0, -V0, V0/2<1/2>, -Vu/2<1/2> or the like from voltage to be impressed on the respective electrodes of the deflecting unit 6 is impressed. A deflecting system is designed by a similar rule. Changing speed of stepping deflecting voltage in the Y direction of a board 8 is set constant, and in the X direction, changing speed of a deflecting electric field in the center of the board is set as 1, and the changing rate on time of the raster deflecting voltage is changed according to a prescribed function. At this time, traveling speeds of beam light spots to form a raster on the board 8 are equalized regardless of a place on the board, so that excellent uniformity of a doze can be obtained.

Description

Detailed Description of the Invention

[0001]

[Brief description of drawings]

FIG. 1 is a schematic diagram showing an embodiment of the present invention.

FIG. 2 is a diagram showing a result of simulating a potential distribution in an ideal multipole electrostatic deflector by a finite element method.

FIG. 3 is a diagram showing the trajectories of ions in the first and second multipole electrostatic deflectors.

FIG. 4 is a relational three-dimensional diagram showing trajectories of ions in the first and second multipole electrostatic deflectors.

FIG. 5 is an explanatory diagram for deriving a digital scan function of an electric field necessary to rasterize a beam spot on a substrate at a uniform speed.

FIG. 6 is an explanatory diagram illustrating the positions of beam spots on a substrate in digital scanning.

FIG. 7 is a block diagram showing an example of a voltage generation circuit for digital scan.

8 is a diagram showing a reference V voltage waveform obtained by the circuit of FIG.

9 is a diagram showing a reference U voltage waveform obtained by the circuit of FIG.

FIG. 10 is a diagram showing a dose distribution on a substrate in ion implantation by a conventional parallel scan that does not perform a digital scan.

FIG. 11 is a diagram showing a dose distribution on a substrate in ion implantation according to the present invention, which has been subjected to digital scanning.

FIG. 12 is a schematic diagram showing a conventional parallel scan type ion implantation apparatus.

FIG. 13 is a view showing an ion beam operating method by a conventional parallel scan type ion implantation apparatus.

FIG. 14 is a diagram showing a voltage applied to each electrode of an octupole electrostatic deflector in a conventional parallel scan type ion implantation apparatus.

[Explanation of symbols]

 1: Ion source 2: Mass separator 3: Ion beam 4: Accelerator 5: Focusing lens 6: First multipole electrostatic deflector 7: Second multipole electrostatic deflector 8: Substrate 9: Controller

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[Submission date] February 17, 1995

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Front page continuation (72) Inventor Yasuo Mihara 2500 Hagien, Chigasaki, Kanagawa Japan Vacuum Technology Co., Ltd.

Claims (2)

[Claims] 1. 2.