JPH0713216Y2 - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH0713216Y2 JPH0713216Y2 JP3265088U JP3265088U JPH0713216Y2 JP H0713216 Y2 JPH0713216 Y2 JP H0713216Y2 JP 3265088 U JP3265088 U JP 3265088U JP 3265088 U JP3265088 U JP 3265088U JP H0713216 Y2 JPH0713216 Y2 JP H0713216Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma processing
- processing apparatus
- outer electrode
- inner electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は、プラズマ処理装置に関し、特にレジスト灰化
装置等の電極構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a plasma processing apparatus, and more particularly to an electrode structure such as a resist ashing apparatus.
本考案は、２つの電極が、同心円筒状に配されたプラズ
マ処理装置において、内側電極を外側電極よりも長く
し、その両端を突出させた電極構造である。この電極構
造によって、イオンのウエハへの浸入を防ぎ、ウエハの
ダメージの少ないプラズマ処理を実現することが出来
る。The present invention has an electrode structure in which, in a plasma processing apparatus in which two electrodes are concentrically arranged, the inner electrode is made longer than the outer electrode, and both ends thereof are projected. With this electrode structure, it is possible to prevent ions from entering the wafer and realize plasma processing with less damage to the wafer.
プラズマ処理装置は、ウエハのエッチングやスパッタリ
ングに用いられる。エッチング装置の１つとして、レジ
ストを剥離するためのレジスト灰化装置がある。The plasma processing apparatus is used for wafer etching and sputtering. As one of the etching apparatuses, there is a resist ashing apparatus for removing the resist.
単純な構造のプラズマ処理装置には、真空チャンバー内
に、互いに対向する一対の板状電極を設けたものがあ
る。エッチングすべき反応性ガスをチャンバー内に導入
し、高周波電力を印加し、放電によってプラズマが発生
する。このプラズマ中で反応性ガスの一部がイオン化し
エッチングに寄与する。しかし、加速されたイオンがウ
エハに衝突することによってダメージを与える。There is a plasma processing apparatus having a simple structure in which a pair of plate-shaped electrodes facing each other are provided in a vacuum chamber. A reactive gas to be etched is introduced into the chamber, high-frequency power is applied, and plasma is generated by discharge. In this plasma, a part of the reactive gas is ionized and contributes to etching. However, the accelerated ions collide with the wafer to cause damage.
従来、このダメージを防御するために、第２図に示すよ
うに、同心円筒状で、同じ筒長５の外側電極１と内側電
極３を用いたものが作られている。この構造において
は、内側電極は、ウエハに対しシールド作用をもつの
で、イオンは内側電極の内部にまでは到達しにくいの
で、ダメージは比較的少なくなる。Conventionally, in order to prevent this damage, as shown in FIG. 2, a concentric cylindrical shape and an outer electrode 1 and an inner electrode 3 having the same tube length 5 are used. In this structure, since the inner electrode has a shielding effect on the wafer, it is difficult for ions to reach the inside of the inner electrode, so that the damage is relatively small.
しかし、第２図の装置でも、素子の微細化に伴いダメー
ジによるチャージアップ等の影響は無視できなくなって
きた。そこで、本考案者は、第２図の装置で、装置端部
におけるウエハのダメージが他の部分よりもより大きい
ことに気付き、前記円筒状内部電極３の上端4a及び下端
4bにおいては、若干のイオンが回り込んで、ウエハにダ
メージを与えることを発見した。However, even in the device of FIG. 2, the influence of charge-up due to damage cannot be ignored due to the miniaturization of the element. Then, the inventor of the present invention noticed that the damage of the wafer at the end of the device was larger than that of the other parts in the device of FIG.
In 4b, it was discovered that some ions wrap around and damage the wafer.
本考案は、このようなイオンの回り込みを防止するため
の電極構造を実現するものである。The present invention realizes an electrode structure for preventing such wraparound of ions.
本考案の電極構造を用いれば、内側電極の筒長が、外側
電極の筒長よりも長く、外側電極の両端から突出してい
るため、加速されたO+やO2 +等のイオンは、突出したシ
ールド板を越えて回り込むことが出来にくい。When the electrode structure of the present invention is used, the cylinder length of the inner electrode is longer than the cylinder length of the outer electrode and protrudes from both ends of the outer electrode, so that accelerated ions such as O + and O 2 + are projected. It is difficult to go over the shield plate and turn around.
第１図は、本考案の実施例によるプラズマ処理装置の電
極構造である。円筒状の外側電極１の内側に、同心円状
で、かつ円筒状の内側電極３を設け、内側電極の筒長
は、外側電極の筒長よりも長く、外側電極の上端2a及び
下端2bから等しい長さだけ突出させる。内側電極は接地
側とし、外側電極には、高周波電源６の他の側の端子が
接続される。FIG. 1 shows an electrode structure of a plasma processing apparatus according to an embodiment of the present invention. Inside the cylindrical outer electrode 1, a concentric and cylindrical inner electrode 3 is provided. The inner electrode has a tube length longer than that of the outer electrode and equal to the upper end 2a and the lower end 2b of the outer electrode. Make it protrude by the length. The inner electrode is on the ground side, and the terminal on the other side of the high frequency power supply 6 is connected to the outer electrode.
レジスト等を剥離するためのプラズマアッシャーの場合
は、所定の圧力のO2ガスをチャンバー内に供給し、高周
波電源によって放電を生じさせる。これに伴ってO2ガス
はプラズマを形成する。ダメージを生ずる原因として、
プラズマ中の荷電粒子のウエハ面への衝撃によるものが
最も大きいと考えられている。この衝撃を生じさせない
ためには、内側電極の筒長は、外側電極の筒長よりも長
くし、その筒長の差は、荷電粒子であるO+やO2 +イオン
が内部電極内へ回り込む量を少なくするために、作業上
支障のない範囲で出来るだけ大きくするのが効果的であ
る。In the case of a plasma asher for stripping the resist or the like, an O 2 gas having a predetermined pressure is supplied into the chamber, and a high frequency power supply causes discharge. Along with this, the O 2 gas forms plasma. As a cause of damage,
It is believed that the largest cause is the impact of charged particles in plasma on the wafer surface. In order to prevent this impact, the tube length of the inner electrode is made longer than the tube length of the outer electrode, and the difference in the tube length is that the charged particles O + and O 2 + ions wrap around inside the internal electrode. In order to reduce the amount, it is effective to make it as large as possible within the range that does not hinder the work.
本考案によるプラズマ処理装置の電極構造を用いれば、
O+やO2 +等の荷電粒子の内部電極内への回り込みを防
ぎ、ウエハへのダメージの少ないプラズマ処理が実現出
来る。With the electrode structure of the plasma processing apparatus according to the present invention,
It is possible to realize plasma processing with little damage to the wafer by preventing charged particles such as O + and O 2 + from flowing into the internal electrode.
第１図は本考案のプラズマ処理装置の電極構造の斜視
図、第２図は従来のプラズマ処理装置の電極構造の斜視
図である。 図中、 １……外側電極 2a……外側電極の上端 2b……外側電極の下端 ３……内側電極 4a……内側電極の上端 4b……内側電極の下端 ５……筒長 ６……高周波電源FIG. 1 is a perspective view of an electrode structure of a plasma processing apparatus of the present invention, and FIG. 2 is a perspective view of an electrode structure of a conventional plasma processing apparatus. In the figure, 1 outer electrode 2a outer electrode 2b outer electrode lower end 3 inner electrode 4a inner electrode upper end 4b inner electrode lower end 5 cylinder length 6 high frequency Power supply
Claims (1)
マ処理装置において、内側電極を外側電極よりも筒長を
長くし、該内側電極を、該外側電極の両端部から突出さ
せたことを特徴とするプラズマ処理装置。1. A plasma processing apparatus in which two electrodes are arranged in a concentric cylindrical shape, wherein the inner electrode has a longer tube length than the outer electrode, and the inner electrode is projected from both ends of the outer electrode. A plasma processing apparatus characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265088U JPH0713216Y2 (en) | 1988-03-14 | 1988-03-14 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3265088U JPH0713216Y2 (en) | 1988-03-14 | 1988-03-14 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01137528U JPH01137528U (en) | 1989-09-20 |
| JPH0713216Y2 true JPH0713216Y2 (en) | 1995-03-29 |
Family
ID=31259203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3265088U Expired - Lifetime JPH0713216Y2 (en) | 1988-03-14 | 1988-03-14 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0713216Y2 (en) |
-
1988
- 1988-03-14 JP JP3265088U patent/JPH0713216Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01137528U (en) | 1989-09-20 |
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