JPH0712529A - Shape inspection apparatus of bonding wire - Google Patents
Shape inspection apparatus of bonding wireInfo
- Publication number
- JPH0712529A JPH0712529A JP5150006A JP15000693A JPH0712529A JP H0712529 A JPH0712529 A JP H0712529A JP 5150006 A JP5150006 A JP 5150006A JP 15000693 A JP15000693 A JP 15000693A JP H0712529 A JPH0712529 A JP H0712529A
- Authority
- JP
- Japan
- Prior art keywords
- bonding wire
- laser beam
- projector
- light amount
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ボンディングワイヤ形
状検査装置に関し、特に、ボンディングワイヤの高さ測
定に適用可能なボンディングワイヤ形状検査装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire shape inspection apparatus, and more particularly to a bonding wire shape inspection apparatus applicable to measuring the height of a bonding wire.
【０００２】[0002]
【従来の技術】従来のボンディングワイヤ形状検査装置
は、特開昭６３―３６５４４２号公報に示されている。2. Description of the Related Art A conventional bonding wire shape inspection apparatus is disclosed in Japanese Patent Application Laid-Open No. 63-365442.
【０００３】図４は従来のボンディングワイヤ形状検査
装置の側面図である。このボンディングワイヤ形状検査
装置は、被検査物であるボンディングワイヤ１８にレー
ザビームを照射するレーザ出力部１９および被検査物か
ら反射されたレーザビームを検出する光位置検出部２０
とからなるセンサユニット部２１と、センサユニット部
２１を一端に保持する支持アーム２２と、支持アーム２
２を保持しこれを被検索物上で水平方向に走査，駆動さ
せるＸＹテーブル２３との含んで構成される。FIG. 4 is a side view of a conventional bonding wire shape inspection apparatus. This bonding wire shape inspection apparatus includes a laser output unit 19 for irradiating a bonding wire 18 as an inspection object with a laser beam and an optical position detection unit 20 for detecting a laser beam reflected from the inspection object.
And a support arm 22 for holding the sensor unit part 21 at one end, and a support arm 2
2 and holds an XY table 23 for scanning and driving the object 2 in the horizontal direction on the object to be searched.
【０００４】次に本装置の動作について図面を参照して
説明する。図５は従来のボンディングワイヤ形状検査装
置のブロック図である。レーザ出力回路２４から出力さ
れるレーザ駆動信号により、レーザ出力部１９からレー
ザビームがボンディングワイヤ１８へ照射される。な
お、このレーザビームはレンズ２５によりスポット径２
５μｍ〜５０μｍに絞される。ボンディングワイヤ１８
で反射されたレーザビームはレンズ２６を通り光位置検
出部２０に入力される。Next, the operation of this apparatus will be described with reference to the drawings. FIG. 5 is a block diagram of a conventional bonding wire shape inspection device. A laser drive signal output from the laser output circuit 24 causes the laser output section 19 to irradiate the bonding wire 18 with a laser beam. Note that this laser beam has a spot diameter of 2 due to the lens 25.
It is narrowed down to 5 μm to 50 μm. Bonding wire 18
The laser beam reflected by is passed through the lens 26 and input to the optical position detector 20.
【０００５】光位置検出部２０は、ボンディングワイヤ
１８の高さにより変位した位置に入力されるレーザビー
ムを、たとえば位置検出素子（ＰＳＤ）によって検知す
るものであり、ボンディングワイヤの高さに対応した変
位信号を出力する。この出力信号は、増幅回路２７ａ，
２７ｂにより増幅された後、ＣＰＵ２８へ入力される。The optical position detector 20 detects a laser beam input to a position displaced by the height of the bonding wire 18 by, for example, a position detecting element (PSD), and corresponds to the height of the bonding wire. Displacement signal is output. This output signal is output to the amplifier circuit 27a,
After being amplified by 27b, it is input to the CPU 28.
【０００６】センサユニット部２１はＸＹテーブル２３
によって走査駆動されるが、このＸＹテーブル２３によ
るセンサユニット部２１の走査に対応したエンコーダ出
力信号は、処理回路２９を経てＣＰＵ２８へ出力され
る。ＣＰＵ２８ではエンコーダ出力信号と変位信号との
同期をとり、任意の個所のボンディングワイヤ１８が正
しくルーピングされているか否かの判定を行い、この結
果をデータ表示部３０において表示する。The sensor unit 21 includes an XY table 23.
The encoder output signal corresponding to the scanning of the sensor unit portion 21 by the XY table 23 is output to the CPU 28 via the processing circuit 29. The CPU 28 synchronizes the encoder output signal with the displacement signal, determines whether or not the bonding wire 18 at an arbitrary position is correctly looped, and displays the result on the data display unit 30.
【０００７】[0007]
【発明が解決しようとする課題】上述した従来のボンデ
ィングワイヤ形状検査装置は、ボンディングワイヤで反
射したレーザビームをレンズで結像しその結像スポット
の位置によりボンディングワイヤの高さを検出するの
で、レンズの収差が高さ検出精度に大きく影響するの
で、レンズの開口数（受光角）を小さくしなければなら
ず、表面が鏡面であるボンディングワイヤが傾くと反射
光を方向が変わるため、レーザビームのレンズに入らな
くなり、高さ検出ができなくなるという問題がある。The above-mentioned conventional bonding wire shape inspection apparatus forms an image of the laser beam reflected by the bonding wire with a lens and detects the height of the bonding wire by the position of the image spot. Since the aberration of the lens greatly affects the height detection accuracy, the numerical aperture (light receiving angle) of the lens must be reduced, and when the bonding wire whose surface is a mirror surface tilts, the reflected light changes its direction. There is a problem that the height cannot be detected because the lens cannot be inserted into the lens.
【０００８】ボンディングワイヤのループ形状測定の場
合、様々なループ形状が考えられ、傾きのあるボンディ
ングワイヤの高さ検出は必須である。When measuring the loop shape of the bonding wire, various loop shapes are conceivable, and it is essential to detect the height of the bonding wire having an inclination.
【０００９】[0009]
【課題を解決するための手段】本発明のボンディングワ
イヤ形状検査装置は、被検査物であるボンディングワイ
ヤに集光されたレーザビームの上方から照射する第１の
投光器と、前記第１の投光器から照射されたレーザビー
ムとは異なる角度で前記ボンディングワイヤに集光され
たレーザビームを照射する第２の投光器と、前記ボンデ
ィングワイヤで反射散乱されたレーザビームを集光する
コンデンサレンズと、前記コンデンサレンズで集光され
たレーザビームを検出する光検出器と、前記第１の投光
器および第２の投光器と前記コンデンサレンズとを前記
ボンディングワイヤに対して相対的に移動せしめる走査
装置と、前記第１の投光器から照射され前記ボンディン
グワイヤで反射散乱されたレーザビームを前記光検出器
で検出した信号と前記第２の投光器から照射され前記ボ
ンディングワイヤで反射散乱されたレーザビームを前記
光検出器で検出した信号との差から前記ボンディングワ
イヤの高さを検出する高さ検出回路とを含むことを特徴
とする。A bonding wire shape inspection apparatus according to the present invention comprises a first light projector for irradiating a laser beam focused on a bonding wire as an object to be inspected from above, and a first light projector. A second light projector that irradiates the laser beam focused on the bonding wire at an angle different from that of the radiated laser beam, a condenser lens that condenses the laser beam reflected and scattered by the bonding wire, and the condenser lens. A photodetector for detecting the laser beam focused by the light source; a scanning device for moving the first and second light projectors and the condenser lens relative to the bonding wire; A signal detected by the photodetector for the laser beam emitted from the projector and reflected and scattered by the bonding wire A height detection circuit for detecting the height of the bonding wire from the difference between the laser beam emitted from the second light projector and reflected and scattered by the bonding wire and the signal detected by the photodetector. And
【００１０】[0010]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【００１１】図１は本発明の一実施例を示す構成図であ
る。FIG. 1 is a block diagram showing an embodiment of the present invention.
【００１２】図１に示したボンディングワイヤ形状検査
装置は、ボンディングワイヤ１にレーザビーム２を照射
する投光器３と、ボンディングワイヤ１にレーザビーム
２とは異なる角度でレーザビーム４を照射する投光器５
と、ボンディングワイヤ１によって反射散乱されたレー
ザビーム２、レーザビーム４を集光するコンデンサレン
ズ６と、コンデンサレンズ６で集光されたレーザビーム
を検出する光検出器７と、ボンディングワイヤ１に対し
て投光器３、投光器５、コンデンサレンズ６および光検
出器７を走査せしめるＸＹステージとを含んで構成され
る。The bonding wire shape inspection apparatus shown in FIG. 1 has a projector 3 for irradiating the bonding wire 1 with a laser beam 2 and a projector 5 for irradiating the bonding wire 1 with a laser beam 4 at an angle different from that of the laser beam 2.
A condenser lens 6 for condensing the laser beam 2 and the laser beam 4 reflected and scattered by the bonding wire 1, a photodetector 7 for detecting the laser beam condensed by the condenser lens 6, and a bonding wire 1 And an XY stage for scanning the light projector 3, the light projector 5, the condenser lens 6, and the photodetector 7.
【００１３】ここで投光器３および５は半導体レーザ
９，１０と集光レンズ１１，１２とを含んで構成され、
レーザビーム２，４はボンディングワイヤ１上でスポッ
ト径２０〜３０μｍ（ボンディングワイヤとほぼ同径）
となるように集光される。Here, the projectors 3 and 5 are constituted by including semiconductor lasers 9 and 10 and condenser lenses 11 and 12,
The laser beams 2 and 4 have a spot diameter of 20 to 30 μm (almost the same diameter as the bonding wire) on the bonding wire 1.
Is focused so that
【００１４】また、コンデンサレンズ６は１点から広が
る光を効率よく集めるためのレンズであり、Ｆナンバー
が１以下の開口角の大きなレンズもある。Further, the condenser lens 6 is a lens for efficiently collecting the light spread from one point, and there is also a lens having a large aperture angle with an F number of 1 or less.
【００１５】ここで本発明によるボンディングワイヤの
高さ計測の原理を図面を参照して説明する。The principle of the bonding wire height measurement according to the present invention will be described with reference to the drawings.
【００１６】図２は本発明によるボンディングワイヤの
高さ計測の原理を示す概念図である。図２において、レ
ーザビーム２およびレーザビーム４はＺ軸に対して角度
θ1およびθ2 だけ傾いている。ＸＹステージによって
レーザビーム２，４がＸ軸方向に走査されレーザビーム
２またはレーザビーム４がボンディングワイヤ１を通過
すると、レーザビームはボンディングワイヤの表面で反
射されコンデンサレンズ６で集光されて光検出器７で検
出される。ここでレーザビーム２およびレーザビーム４
は所定の角度だけ傾いているため、ボンディングワイヤ
１の高さによってレーザビーム２およびレーザビーム４
がボンディングワイヤ１を通過する位置が変化する。し
たがって、レーザビーム２の反射光とレーザビーム４の
反射光をそれぞれ独立に検出し、それぞれのレーザビー
ムが検出されたときのＸＹステージのＸ軸方向の位置の
差からボンディングワイヤ１の高さを求めることができ
る。ここでレーザビーム２とレーザビーム４が交わる位
置からのボンディングワイヤ１の高さΔｈは、レーザビ
ーム２とレーザビーム４の反射光が検出された位置の差
をΔｘとすると、 Δｈ＝Δｘ／（ｔａｎθ1 ＋ｔａｎθ2 ） （１） で表される。FIG. 2 is a conceptual diagram showing the principle of measuring the height of the bonding wire according to the present invention. In FIG. 2, the laser beam 2 and the laser beam 4 are tilted with respect to the Z axis by angles θ 1 and θ 2 . When the laser beams 2 and 4 are scanned in the X-axis direction by the XY stage and the laser beam 2 or the laser beam 4 passes through the bonding wire 1, the laser beam is reflected on the surface of the bonding wire and condensed by the condenser lens 6 to detect light. It is detected by the device 7. Where laser beam 2 and laser beam 4
Are inclined by a predetermined angle, the laser beam 2 and the laser beam 4 are changed depending on the height of the bonding wire 1.
The position where the wire passes through the bonding wire 1 changes. Therefore, the reflected light of the laser beam 2 and the reflected light of the laser beam 4 are independently detected, and the height of the bonding wire 1 is determined from the difference in the position of the XY stage in the X-axis direction when the respective laser beams are detected. You can ask. Here, the height Δh of the bonding wire 1 from the position where the laser beam 2 and the laser beam 4 intersect is Δh = Δx / (, where Δx is the difference between the positions where the reflected lights of the laser beam 2 and the laser beam 4 are detected. tan θ 1 + tan θ 2 ) It is represented by (1).
【００１７】本実施例では、レーザビーム２の反射光と
レーザビーム４の反射光を光検出器７でそれぞれ独立に
検出するために、一定の周波数で半導体レーザ９，１０
および光検出器７から出力される光量信号を時系列的に
切り換える。図１に示すように、切り換え信号発生装置
１３によって発生された一定の周波数の切り換え信号で
半導体レーザ９，１０の駆動回路１４を制御し、半導体
レーザ９，１０を交互に発振させ、さらに光検出器７か
ら出力される光量信号を切り換えるマルチプレクサ１５
を前記切り換え信号で同様に制御し、半導体レーザ９が
発振しているときの光検出器７の出力を光量メモリ１６
に記憶し、半導体レーザ１０が発振しているときの光検
出器７の出力を光量メモリ１７に記憶することにより、
レーザビーム２の反射光とレーザビーム４の反射光をそ
れぞれ独立に検出できる。ここで切り換え信号の周波数
は、ＸＹステージの走査速度をｖ［μｍ／ｓｅｃ］、位
置検出分解能をｐ［μｍ］とすると、ｖ／ｐ［ｓｅ
ｃ-1］より充分大きくなくてはならない。In the present embodiment, the semiconductor lasers 9 and 10 are driven at a constant frequency so that the reflected light of the laser beam 2 and the reflected light of the laser beam 4 are detected independently by the photodetector 7.
And the light amount signal output from the photodetector 7 is switched in time series. As shown in FIG. 1, the switching signal of a constant frequency generated by the switching signal generator 13 controls the drive circuit 14 of the semiconductor lasers 9 and 10 to oscillate the semiconductor lasers 9 and 10 alternately, and to detect light. Multiplexer 15 for switching the light amount signal output from the device 7
Is similarly controlled by the switching signal, and the output of the photodetector 7 when the semiconductor laser 9 is oscillating is controlled by the light amount memory 16
By storing the output of the photodetector 7 when the semiconductor laser 10 is oscillating in the light amount memory 17,
The reflected light of the laser beam 2 and the reflected light of the laser beam 4 can be detected independently. Here, the frequency of the switching signal is v / p [se when the scanning speed of the XY stage is v [μm / sec] and the position detection resolution is p [μm].
c −1 ].
【００１８】ボンディングワイヤ１の高さを求めるに
は、光量メモリ１６，１７に記憶された光量データから
各々のワイヤからの反射光を検出したときの光量データ
のアドレスを求め、そのアドレスからそのときのＸＹス
テージの位置を求めて、その差からボンディングワイヤ
１の高さを算出する。図３(a) はＸＹステージのＸ軸方
向位置と光検出器７で検出されるレーザビーム２の反射
光量の関係を示すグラブであり、図３(b) はＸＹステー
ジのＸ軸方向位置と光検出器７で検出されるレーザビー
ム４の反射光量の関係を示すグラフである。それぞれの
グラフで反射光量が最大となるＸ座標をｘ１，ｘ２とす
ると、 Δｘ＝ｘ２−ｘ１ （２） となり、（１）（２）式より Δｈ＝（ｘ２−ｘ１）（ｔａｎθ1 ＋ｔａｎθ2 ） （３） より、ボンディングワイヤ１の高さΔｈを求めることが
できる。In order to obtain the height of the bonding wire 1, the address of the light quantity data when the reflected light from each wire is detected is calculated from the light quantity data stored in the light quantity memories 16 and 17, and the address is obtained from that address. The position of the XY stage is obtained, and the height of the bonding wire 1 is calculated from the difference. FIG. 3 (a) is a grab showing the relationship between the X-axis direction position of the XY stage and the reflected light amount of the laser beam 2 detected by the photodetector 7, and FIG. 3 (b) is the X-axis direction position of the XY stage. 7 is a graph showing the relationship between the amount of reflected light of the laser beam 4 detected by the photodetector 7. In each graph, if the X coordinate where the amount of reflected light is maximum is x1 and x2, then Δx = x2-x1 (2), and from equations (1) and (2), Δh = (x2-x1) (tan θ 1 + tan θ 2 ). From (3), the height Δh of the bonding wire 1 can be obtained.
【００１９】[0019]
【発明の効果】以上説明したように、本発明は、２つの
レーザビームを互いに角度を変えてボンディングワイヤ
に照射し、ボンディングワイヤからの反射光を低いＦナ
ンバーのコンデンサレンズで集光して検出し、それぞれ
のレーザビームの反射光の検出された位置からボンディ
ングワイヤの高さを求めるので、ボンディングワイヤが
傾いて反射光の方向が変わってもコンデンサレンズに入
射するので、様々なループ形状のボンディングワイヤの
高さ計測が可能になるという効果を奏する。As described above, according to the present invention, two laser beams are applied to the bonding wire at different angles, and the reflected light from the bonding wire is condensed and detected by the condenser lens having a low F number. However, since the height of the bonding wire is obtained from the position where the reflected light of each laser beam is detected, even if the bonding wire tilts and the direction of the reflected light changes, it enters the condenser lens. It is possible to measure the height of the wire.
【図１】本発明の一実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】本発明の原理を示す原理図である。FIG. 2 is a principle diagram showing the principle of the present invention.
【図３】図１の実施例におけるＸＹステージのＸ座標と
反射光量の関係を示すグラフである。FIG. 3 is a graph showing the relationship between the X coordinate of the XY stage and the amount of reflected light in the embodiment of FIG.
【図４】従来のボンディングワイヤ形状検査装置の側面
図である。FIG. 4 is a side view of a conventional bonding wire shape inspection device.
【図５】従来のボンディングワイヤ形状検査装置のブロ
ック図である。FIG. 5 is a block diagram of a conventional bonding wire shape inspection device.
１ ボンディングワイヤ ２ レーザビーム ３ 投光器 ４ レーザビーム ５ 投光器 ６ コンデンサレンズ ７ 光検出器 １１ 集光レンズ １２ 集光レンズ １３ 切り換え信号発生装置 １４ 駆動回路 １５ マルチプレクサ １６ 光量メモリ １７ 光量メモリ １８ ボンディングワイヤ １９ レーザ出力部 ２０ 光位置検出部 ２１ センサユニット部 ２８ ＣＰＵ 1 bonding wire 2 laser beam 3 light projector 4 laser beam 5 light projector 6 condenser lens 7 photodetector 11 light collecting lens 12 light collecting lens 13 switching signal generator 14 drive circuit 15 multiplexer 16 light intensity memory 17 light intensity memory 18 bonding wire 19 laser output 20 Optical position detector 21 Sensor unit 28 CPU
Claims (2)
光されたレーザビームの上方から照射する第１の投光器
と、前記第１の投光器から照射されたレーザビームとは
異なる角度で前記ボンディングワイヤに集光されたレー
ザビームを照射する第２の投光器と、前記ボンディング
ワイヤで反射散乱されたレーザビームを集光するコンデ
ンサレンズと、前記コンデンサレンズで集光されたレー
ザビームを検出する光検出器と、前記第１の投光器およ
び第２の投光器と前記コンデンサレンズとを前記ボンデ
ィングワイヤに対して相対的に移動せしめる走査装置
と、前記第１の投光器から照射され前記ボンディングワ
イヤで反射散乱されたレーザビームを前記光検出器で検
出した信号と前記第２の投光器から照射され前記ボンデ
ィングワイヤで反射散乱されたレーザビームを前記光検
出器で検出した信号との差から前記ボンディングワイヤ
の高さを検出する高さ検出回路とを含むことを特徴とす
るボンディングワイヤ形状検査装置。1. A first light projector for irradiating a laser beam focused on a bonding wire as an inspection object from above and a laser beam for irradiating the laser beam irradiated from the first light projector to the bonding wire at different angles. A second light projector that irradiates the condensed laser beam, a condenser lens that condenses the laser beam reflected and scattered by the bonding wire, and a photodetector that detects the laser beam condensed by the condenser lens. A scanning device for moving the first and second projectors and the condenser lens relative to the bonding wire; and a laser beam emitted from the first projector and reflected and scattered by the bonding wire. Is emitted from the second light projector and reflected by the bonding wire. A bonding wire shape inspection device, comprising: a height detection circuit that detects the height of the bonding wire from the difference between the disturbed laser beam and the signal detected by the photodetector.
第２の投光器から交互にレーザビームを照射せしめるレ
ーザ切り換え装置と、前記レーザ切り換え装置と同期し
て前記光検出器からの光量信号を切り換える光量信号切
り換え装置と、前記光量信号切り換え装置で切り換えら
れた光量信号のうち前記第１の投光器から照射され前記
ボンディングワイヤによって反射散乱されたレーザビー
ムの光量を記憶する第１の光量メモリと、前記光量信号
切り換え装置で切り換えられた光量信号のうち前記第２
の投光器から照射され前記ボンディングワイヤによって
反射散乱されたレーザビームの光量を記憶する第２の光
量メモリとを含むことを特徴とする請求項１記載のボン
ディングワイヤ形状検査装置。2. A laser switching device for alternately irradiating a laser beam from the first projector and the second projector at a predetermined frequency, and a light amount signal from the photodetector in synchronization with the laser switching device. A light amount signal switching device for switching, and a first light amount memory for storing the light amount of the laser beam emitted from the first projector and reflected and scattered by the bonding wire among the light amount signals switched by the light amount signal switching device, The second of the light amount signals switched by the light amount signal switching device
2. The bonding wire shape inspection apparatus according to claim 1, further comprising a second light amount memory for storing a light amount of the laser beam emitted from the projector of FIG. 1 and reflected and scattered by the bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150006A JPH07117390B2 (en) | 1993-06-22 | 1993-06-22 | Bonding wire shape inspection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150006A JPH07117390B2 (en) | 1993-06-22 | 1993-06-22 | Bonding wire shape inspection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0712529A true JPH0712529A (en) | 1995-01-17 |
| JPH07117390B2 JPH07117390B2 (en) | 1995-12-18 |
Family
ID=15487416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5150006A Expired - Lifetime JPH07117390B2 (en) | 1993-06-22 | 1993-06-22 | Bonding wire shape inspection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07117390B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020065731A (en) * | 2001-02-07 | 2002-08-14 | 주식회사 칩팩코리아 | Wire bonding monitoring method for fabricating semiconductor package |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61198009A (en) * | 1985-02-28 | 1986-09-02 | Sony Corp | Recognition device for three-dimensional shape |
| JPH04282407A (en) * | 1991-03-12 | 1992-10-07 | Nec Corp | Measuring device of three-dimensional shape |
-
1993
- 1993-06-22 JP JP5150006A patent/JPH07117390B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61198009A (en) * | 1985-02-28 | 1986-09-02 | Sony Corp | Recognition device for three-dimensional shape |
| JPH04282407A (en) * | 1991-03-12 | 1992-10-07 | Nec Corp | Measuring device of three-dimensional shape |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020065731A (en) * | 2001-02-07 | 2002-08-14 | 주식회사 칩팩코리아 | Wire bonding monitoring method for fabricating semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07117390B2 (en) | 1995-12-18 |
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