JPH07120496A - Acceleration sensor - Google Patents
Acceleration sensorInfo
- Publication number
- JPH07120496A JPH07120496A JP5266039A JP26603993A JPH07120496A JP H07120496 A JPH07120496 A JP H07120496A JP 5266039 A JP5266039 A JP 5266039A JP 26603993 A JP26603993 A JP 26603993A JP H07120496 A JPH07120496 A JP H07120496A
- Authority
- JP
- Japan
- Prior art keywords
- fixed electrode
- acceleration sensor
- electrode
- connection terminal
- external connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Micromachines (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体静電容量式の加
速度センサに係り、特に自動車に搭載してエアバッグ制
御や車体姿勢制御に使用するのに好適な加速度センサに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor capacitance type acceleration sensor, and more particularly to an acceleration sensor suitable for being mounted on an automobile and used for airbag control and vehicle body attitude control.
【０００２】[0002]
【従来の技術】近年、自動車用のエアバッグシステムや
アクティブサスペンションなどの車体姿勢制御システム
についての関心が高まるにつれ、種々の加速度センサに
ついての提案がなされるようになっているが、その一種
に半導体技術による静電容量検出方式の加速度センサが
ある。この方式の加速度センサの従来技術としては、例
えば特開平4−16769号公報に記載されているものがあ
り、この従来技術による加速度センサは、固定電極が設
けられた上側のガラス板と質量部（可動電極部）が形成
されたシリコン板、それに固定電極が設けられた下側の
ガラス板の三層からなる積層構造のもので、さらに、上
記上側ガラス板にはスルーホール部が設けてあり、これ
により固定電極と接続端子との間の接続路が与えられる
ようにしている。2. Description of the Related Art In recent years, as interest in vehicle body attitude control systems such as airbag systems and active suspensions for automobiles has increased, various acceleration sensors have been proposed, one of which is a semiconductor. There is a capacitance detection type acceleration sensor based on the technology. As a conventional technique of this type of acceleration sensor, for example, there is one described in Japanese Patent Laid-Open No. 4-16769, and the acceleration sensor according to this conventional technique includes an upper glass plate provided with a fixed electrode and a mass part ( (Movable electrode portion) a silicon plate having a laminated structure consisting of three layers of a lower glass plate provided with a fixed electrode and a silicon plate, further, the upper glass plate is provided with a through hole portion, This provides a connection path between the fixed electrode and the connection terminal.
【０００３】なお、ここでいうスルーホール部とは、板
状誘電体に通し孔を設け、その内面に導電性の皮膜を形
成し、この皮膜により板状誘電体の一方の面と他方の面
の間での接続路を与えるようにしたものを意味する。The term "through hole portion" as used herein means that a through hole is provided in a plate-like dielectric and a conductive film is formed on the inner surface of the plate-like dielectric, and this film forms one surface and the other surface of the plate-like dielectric. It means that a connection path between them is given.
【０００４】[0004]
【発明が解決しようとする課題】上記従来技術は固定電
極から外部接続端子までを一体形成するための最適な材
質及び膜厚については配慮がされておらず、固定電極と
可動電極の間隔が例えば１μｍ〜５μｍ程度の加速度セ
ンサにおいて、外部接続端子の条件に合わせて固定電極
をアルミの膜で１μｍ以上形成するとヒロックの影響に
より固定電極と可動電極の間に障害となる突起が発生
し、可動電極の動きを妨げてしまう問題があった。The prior art described above does not take into consideration the optimum material and film thickness for integrally forming the fixed electrode and the external connection terminal, and the distance between the fixed electrode and the movable electrode is, for example, In an acceleration sensor of about 1 μm to 5 μm, if the fixed electrode is formed with an aluminum film to a thickness of 1 μm or more in accordance with the condition of the external connection terminal, a hillock will cause an obstruction between the fixed electrode and the movable electrode. There was a problem that hindered his movement.
【０００５】すなわち、このような加速度センサでは、
固定電極及び外部接続端子の成膜にはスパッタリングが
用いられるが、このとき上記の従来技術では図２（ａ）
に示すように上下固定電極６，７はヒロックが発生しに
くい高融点金属膜例えばモリブデン等を静電容量を検出
する上で可能な限り薄く例えば０.５μｍ 以下に形成す
る必要があり、上記上側固定電極６から連続して引き出
された上側電極リード部８の膜厚ではスルーホール部９
の内壁において断線や接触不良が発生してしまうため、
更に電極リード補強部１５を重ねて設ける必要がある。That is, in such an acceleration sensor,
Sputtering is used for film formation of the fixed electrode and the external connection terminal. At this time, in the above-mentioned conventional technique, as shown in FIG.
As shown in, the upper and lower fixed electrodes 6 and 7 must be formed of a refractory metal film, such as molybdenum, which is hard to generate hillocks, to be as thin as possible, for example, 0.5 μm or less in order to detect electrostatic capacitance. With the film thickness of the upper electrode lead portion 8 continuously drawn from the fixed electrode 6, the through hole portion 9
Since disconnection and poor contact will occur on the inner wall of the
Furthermore, it is necessary to stack the electrode lead reinforcing portions 15 and to provide them.
【０００６】更に図２（ｂ）に示すように上記理由によ
り１回の成膜工程で下側固定電極７，下側電極リード１
４及び下側外部接続端子１３を形成した場合、ワイヤボ
ンディングを行うのに必要な膜厚例えば１μｍ以上を確
保できず、更にモリブデン等の金属膜は、硬さの違いか
ら金やアルミ線をワイヤボンディングできないという問
題が発生するため、更にアルミ等の金属膜で下側外部接
続端子１３を積層する必要がある。Further, as shown in FIG. 2B, the lower fixed electrode 7 and the lower electrode lead 1 are formed by one film forming process for the above reason.
4 and the lower external connection terminal 13 are formed, the film thickness required for wire bonding, for example, 1 μm or more cannot be secured, and the metal film such as molybdenum has a hardness different from that of gold or aluminum wire. Since the problem that bonding cannot be performed occurs, it is necessary to further stack the lower external connection terminal 13 with a metal film such as aluminum.
【０００７】本発明の目的は、固定電極上にヒロックが
発生すること無くワイヤボンディング可能な導電性膜の
膜厚を確保することで電極リード部及び外部接続端子を
一体形成できるようにした加速度センサを提供すること
にある。An object of the present invention is to provide an acceleration sensor capable of integrally forming an electrode lead portion and an external connection terminal by securing a film thickness of a wire-bondable conductive film without causing hillocks on a fixed electrode. To provide.
【０００８】[0008]
【課題を解決するための手段】上記目的は、可動電極と
なる質量部が形成された半導体板状部材の両面を少なく
とも一方に固定電極が形成された２枚のガラス板で積層
し、上記固定電極から外部接続端子間の接続路を有する
半導体静電容量式加速度センサにおいて、上記固定電極
にヒロックの発生しにくく、かつ、ワイヤボンディング
可能な材質を用い、上記固定電極及び接続路の導電性膜
を外部接続端子と同一膜で一体形成することにより達成
される。SUMMARY OF THE INVENTION The above-mentioned object is to stack two sides of a semiconductor plate-shaped member, in which a mass portion serving as a movable electrode is formed, on at least one side of which two glass plates are formed, and to fix the above-mentioned fixed plate. In a semiconductor capacitance type acceleration sensor having a connection path between an electrode and an external connection terminal, a conductive film of the fixed electrode and the connection path is formed by using a material that is unlikely to cause hillocks on the fixed electrode and is wire-bondable. Is integrally formed with the external connection terminal by the same film.
【０００９】[0009]
【作用】ヒロックが発生しにくくワイヤボンディング可
能な導電性膜で形成された固定電極は、膜厚を厚くして
もヒロックの発生が無く均一な厚みを確保でき、同じく
形成された下側の電極リード部（接続路）及び下段の外
部接続端子にかけて一体形成が可能となる。The fixed electrode formed of a conductive film that hardly causes hillocks and can be wire-bonded does not generate hillocks even if the film thickness is increased, and a uniform thickness can be secured. The lead portion (connection path) and the lower external connection terminal can be integrally formed.
【００１０】更に、上側電極リードにおいては、導通の
確保が難しいスルーホール部の内壁面にも充分な膜厚を
確保することが可能であるため従来技術で上記したよう
にスルーホール部に電極リード補強部を設ける必要が無
くなる。Further, in the upper electrode lead, since it is possible to secure a sufficient film thickness on the inner wall surface of the through hole portion where it is difficult to secure conduction, as described in the prior art, the electrode lead is formed in the through hole portion. There is no need to provide a reinforcing part.
【００１１】[0011]
【実施例】以下、本発明による加速度センサについて、
図示の実施例により詳細に説明する。図１は、本発明の
一実施例で図１（ａ）は上面から見た状態を示し、同
(ｂ)はＡ−Ａ間での断面図を示し、同（ｃ）はＢ−Ｂ間
での断面図を示しており、これらの図において、１はシ
リコン板、４は上側ガラス板、５は下側ガラス板、であ
り、これらを積層し三層構造にして加速度センサが構成
されている。EXAMPLE An acceleration sensor according to the present invention will be described below.
This will be described in detail with reference to the illustrated embodiment. FIG. 1 shows an embodiment of the present invention, and FIG.
(b) shows a sectional view between A-A and (c) shows a sectional view between BB. In these figures, 1 is a silicon plate, 4 is an upper glass plate, 5 Is a lower glass plate, and these are laminated to form an acceleration sensor with a three-layer structure.
【００１２】上側ガラス板４と、下側ガラス板５には、
それぞれ導電材料の薄膜からなる上側固定電極６と下側
固定電極７が設けてあるが、これらはスパッタリングな
どで各ガラス板４，５の全面に成膜後、フォトリソグラ
フィー技術を用いて形成してある。The upper glass plate 4 and the lower glass plate 5 are
An upper fixed electrode 6 and a lower fixed electrode 7 each made of a thin film of a conductive material are provided. These are formed by photolithography after film formation on the entire surface of each glass plate 4 and 5 by sputtering or the like. is there.
【００１３】また、シリコン板１は、単結晶シリコンで
作られ、可動電極を兼ねた質量部２と、カンチレバー３
が形成されているが、これらは、マイクロマシニング技
術を応用したエッチングにより形成されている。The silicon plate 1 is made of single crystal silicon and has a mass portion 2 also serving as a movable electrode and a cantilever 3.
Are formed, but these are formed by etching to which a micromachining technique is applied.
【００１４】そして、これらのガラス板４，５とシリコ
ン板１は、それぞれの固定電極６，７が質量部２に対向
するようにして、シリコン板１を真中に挟んで積層し、
組み立てられる なお、これら三層の接合には、通常は陽極接合を用いて
いる。The glass plates 4 and 5 and the silicon plate 1 are laminated with the silicon plate 1 sandwiched in the middle so that the fixed electrodes 6 and 7 face the mass part 2.
Assembled Note that anodic bonding is usually used for bonding these three layers.
【００１５】図１に戻り、８は上側電極リード、９はス
ルーホール部、１０は充填剤、１１は上側外部接続端
子、１２は中段外部接続端子、１３は下段外部接続端
子、１４は下側電極リード、図２に示す１５は上側電極
リード補強部である。Returning to FIG. 1, 8 is an upper electrode lead, 9 is a through hole portion, 10 is a filler, 11 is an upper external connecting terminal, 12 is a middle external connecting terminal, 13 is a lower external connecting terminal, and 14 is a lower side. The electrode lead, 15 shown in FIG. 2, is an upper electrode lead reinforcing portion.
【００１６】信号の取り出し口である外部接続端子の
内、まず上側外部接続端子１１は、上側ガラス板４の表
面（図では上側の面）に設けられ、次に中段外部接続端
子１２は、シリコン板１の上側面に、そして下段外部接
続端子１３は、下側ガラス板５の上側の面にそれぞれ設
けてあり、上側外部接続端子１１は、上側固定電極６を
外部に接続する端子となり、同様に中段外部接続端子１
２は、可動電極を兼ねた質量部２を、そして下段外部接
続端子１３は、下側固定電極７をそれぞれ外部に接続す
るための端子となる。Among the external connection terminals which are the signal outlets, first, the upper external connection terminal 11 is provided on the surface of the upper glass plate 4 (the upper surface in the figure), and then the middle external connection terminal 12 is made of silicon. The upper external connection terminal 13 is provided on the upper side surface of the plate 1 and on the upper surface of the lower glass plate 5, and the upper external connection terminal 11 serves as a terminal for connecting the upper fixed electrode 6 to the outside. Middle external connection terminal 1
Reference numeral 2 serves as a terminal for connecting the mass portion 2 also serving as a movable electrode, and the lower external connection terminal 13 for connecting the lower fixed electrode 7 to the outside.
【００１７】ここで、まず、可動電極を兼ねた質量部２
から中段外部接続端子１２がシリコン板１の上側の面に
直接設けられていることにより、このままで接続され
る。Here, first, the mass portion 2 also serving as the movable electrode.
Since the middle-stage external connection terminals 12 are directly provided on the upper surface of the silicon plate 1, they are connected as they are.
【００１８】また、下側固定電極７には、下側ガラス板
５に下側電極リード１４が設けてあり、これにより、下
側固定電極７は、そのまま下段外部接続端子１３に接続
される。Further, the lower fixed electrode 7 is provided with a lower electrode lead 14 on the lower glass plate 5, so that the lower fixed electrode 7 is directly connected to the lower external connection terminal 13.
【００１９】しかるに、上側固定電極６と上側外部接続
端子１１との間の接続は、これらが上側ガラス板４の異
なった面にそれぞれ設けられているので、スルーホール
部９を介して接続する必要があり、このため、まず、上
側電極リード８により上側固定電極６とスルーホール部
９の下側の電極引出部を接続し、更に、このスルーホー
ル部９の上側電極引出部を上側外部接続端子１１に接続
することにより、接続路が得られるようにしており、こ
れにより上側固定電極６からの信号が上側外部接続端子
１１に取り出されるようにしている。However, since the upper fixed electrode 6 and the upper external connection terminal 11 are provided on different surfaces of the upper glass plate 4, it is necessary to connect the upper fixed electrode 6 and the upper external connection terminal 11 through the through hole portion 9. Therefore, first, the upper fixed electrode 6 and the lower electrode lead-out portion of the through hole portion 9 are connected by the upper electrode lead 8, and the upper electrode lead-out portion of the through hole portion 9 is connected to the upper external connection terminal. A connection path is obtained by connecting to the upper electrode 11, so that the signal from the upper fixed electrode 6 is taken out to the upper external connection terminal 11.
【００２０】なお、このスルーホール部９の内部と、上
側ガラス板４とシリコン板１との間の一部には、シリコ
ーン樹脂など適当な材料からなる充填剤１０が満たさ
れ、外部からの水や異物等の浸入を防ぐ構造になってい
る。The inside of the through hole 9 and a part between the upper glass plate 4 and the silicon plate 1 are filled with a filler 10 made of a suitable material such as a silicone resin, and water from the outside is filled. It has a structure that prevents the intrusion of foreign matter and foreign matter.
【００２１】図１の実施例によれば、導電性膜の材料と
して例えばアルミにシリコン及びパラジウム等を添加す
ることで１μｍ〜２μｍの厚みで形成してもヒロックの
発生を抑えながら金やアルミ線でのワイヤボンディング
を可能としている。According to the embodiment of FIG. 1, even if the conductive film is made of aluminum, for example, by adding silicon and palladium to a thickness of 1 μm to 2 μm, hillocks are suppressed and gold or aluminum wire is suppressed. It enables wire bonding in.
【００２２】この図１（ｂ）の実施例によれば、上側ガ
ラス板４の上側固定電極６を形成する面（図１（ｂ）で
は下側の面）全面に、スルーホール部９の内壁面に導通
を確保するのに充分な導電性膜の厚み、例えば上側固定
電極６を形成する面において１μｍ〜２μｍをスパッタ
リング等で形成することが可能となるために、フォトリ
ソグラフィー技術を用いて上側固定電極６及びスルーホ
ール部９の内壁面を含む上側電極リード８を残して導電
性膜を除去した場合上側電極リード補強部を設けなくて
もスルーホール部９の内壁における断線や接触不良を防
止でき、更に上側ガラス板４の表面（図では上側の面）
に上側外部接続端子１１を形成することで接続路が確保
される。According to the embodiment of FIG. 1B, the through-hole portion 9 is formed on the entire surface of the upper glass plate 4 on which the upper fixed electrode 6 is formed (the lower surface in FIG. 1B). Since it is possible to form a conductive film having a sufficient thickness on the wall surface to ensure continuity, for example, 1 μm to 2 μm on the surface on which the upper fixed electrode 6 is formed by sputtering or the like, the upper side using photolithography technology is used. When the conductive film is removed by leaving the upper electrode lead 8 including the inner wall surfaces of the fixed electrode 6 and the through hole portion 9, the disconnection and the contact failure on the inner wall of the through hole portion 9 are prevented without providing the upper electrode lead reinforcing portion. Yes, the surface of the upper glass plate 4 (upper surface in the figure)
The connection path is secured by forming the upper external connection terminal 11 on the.
【００２３】次に、図１（ｃ）の実施例によれば、下側
ガラス板５の下側固定電極７を形成する面（図１（ｃ）
では上側の面）全面に、下側外部接続端子１３を形成す
るのに充分な厚み例えば１μｍ〜２μｍの導電性膜を形
成し、フォトリソグラフィー技術を用いて下側固定電極
７，下側電極リード１４及び下側外部接続端子１３を残
して導電性膜を除去することで一体形成される。Next, according to the embodiment of FIG. 1C, the surface on which the lower fixed electrode 7 of the lower glass plate 5 is formed (FIG. 1C).
Then, a conductive film having a thickness sufficient for forming the lower external connection terminal 13, for example, 1 μm to 2 μm is formed on the entire surface (the upper surface), and the lower fixed electrode 7 and the lower electrode lead are formed by using a photolithography technique. 14 and the lower external connection terminal 13 are left, and the conductive film is removed to integrally form them.
【００２４】上記した外に、このような加速度センサの
固定電極となる導電性膜の材料としては、アルミにシリ
コンを添加したものや、アルミにパラジウムを添加した
ものもアルミ単体に比べヒロックを軽減する働きがあ
る。In addition to the above, as a material for the conductive film which becomes the fixed electrode of such an acceleration sensor, aluminum added with silicon or aluminum added with palladium reduces hillocks as compared with aluminum alone. There is a function to do.
【００２５】[0025]
【発明の効果】本発明によれば、固定電極からの信号を
取り出す場合、上側においてはスルーホール部に電極リ
ードの補強部を設けなくても断線や接続不良の恐れが無
く、更に、下側においては固定電極と外部接続端子を別
けて形成する必要が無く、製造工程の簡略化が可能とな
るため、製造コストの削減に効果があり、更に製造時の
歩留まり向上にも効果がある。According to the present invention, when the signal from the fixed electrode is taken out, there is no fear of disconnection or connection failure at the upper side without providing the reinforcing portion of the electrode lead in the through hole portion, and further, at the lower side. In this case, since it is not necessary to separately form the fixed electrode and the external connection terminal, and the manufacturing process can be simplified, the manufacturing cost can be reduced, and the yield at the time of manufacturing can be improved.
【図１】本発明による加速度センサの一実施例を示す説
明図である。FIG. 1 is an explanatory view showing an embodiment of an acceleration sensor according to the present invention.
【図２】加速度センサの従来例を示す説明図である。FIG. 2 is an explanatory diagram showing a conventional example of an acceleration sensor.
１…シリコン板、２…質量部（可動電極）、３…カンチ
レバー、４…上側ガラス板、５…下側ガラス板、６…上
側固定電極、７…下側固定電極、８…上側電極リード、
９…スルーホール部、１０…充填剤、１１…上側外部接
続端子、１２…中段外部接続端子、１３…下側外部接続
端子、１４…下側電極リード、１５…上側電極リード補
強部。1 ... Silicon plate, 2 ... Mass part (movable electrode), 3 ... Cantilever, 4 ... Upper glass plate, 5 ... Lower glass plate, 6 ... Upper fixed electrode, 7 ... Lower fixed electrode, 8 ... Upper electrode lead,
9 ... Through-hole part, 10 ... Filler, 11 ... Upper external connection terminal, 12 ... Middle external connection terminal, 13 ... Lower external connection terminal, 14 ... Lower electrode lead, 15 ... Upper electrode lead reinforcement part.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 林 雅秀 茨城県勝田市大字高場2520番地 株式会社 日立製作所自動車機器事業部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahide Hayashi 2520 Takaba, Katsuta City, Ibaraki Prefecture Hitachi Ltd. Automotive Equipment Division
Claims (8)
板状部材の少なくとも一方に固定電極が形成されたガラ
ス板を積層した加速度センサにおいて、上記固定電極に
ヒロックの発生しにくく、かつワイヤボンディング可能
な材料を用いたことを特徴とする加速度センサ。1. An acceleration sensor in which a glass plate having a fixed electrode formed on at least one side of a semiconductor plate-shaped member having a mass portion serving as a movable electrode is laminated, and hillocks are unlikely to occur on the fixed electrode, and a wire is used. An acceleration sensor using a bondable material.
接続端子までの接続路を一体構造としたことを特徴とす
る加速度センサ。2. The acceleration sensor according to claim 1, wherein the connection path from the fixed electrode to the external connection terminal has an integrated structure.
ｍ以上としたことを特徴とする加速度センサ。3. The fixed electrode according to claim 1, wherein the thickness of the fixed electrode is 1 μm.
An acceleration sensor having a length of m or more.
ミ合金（例えばアルミ，パラジウム，シリコン等の合
金）としたことを特徴とする加速度センサ。4. The acceleration sensor according to claim 1, wherein the material of the fixed electrode is an aluminum alloy (for example, an alloy of aluminum, palladium, silicon, etc.).
板状部材の両面を少なくとも一方に固定電極が形成され
た２枚のガラス板で積層した加速度センサにおいて、上
記固定電極にヒロックの発生しにくく、かつワイヤボン
ディング可能な材料を用いたことを特徴とする加速度セ
ンサ。5. An acceleration sensor in which a semiconductor plate member having a movable electrode mass part is laminated with two glass plates having a fixed electrode formed on at least one side of the semiconductor plate member, and a hillock occurs on the fixed electrode. An acceleration sensor characterized by using a material that is hard to do and that can be wire-bonded.
固定電極と外部端接続子及び、上記固定電極と外部接続
端子までの接続路を一体構造としたことを特徴とする加
速度センサ。6. The acceleration sensor according to claim 5, wherein at least one of the fixed electrode, the external end connector, and the connection path from the fixed electrode to the external connection terminal are integrated.
ｍ以上としたことを特徴とする加速度センサ。7. The fixed electrode according to claim 5, wherein the thickness of the fixed electrode is 1 μm.
An acceleration sensor having a length of m or more.
ミ合金（例えばアルミ，パラジウム，シリコン等の合
金）としたことを特徴とする加速度センサ。8. The acceleration sensor according to claim 5, wherein the material of the fixed electrode is an aluminum alloy (for example, an alloy of aluminum, palladium, silicon, etc.).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5266039A JPH07120496A (en) | 1993-10-25 | 1993-10-25 | Acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5266039A JPH07120496A (en) | 1993-10-25 | 1993-10-25 | Acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07120496A true JPH07120496A (en) | 1995-05-12 |
Family
ID=17425547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5266039A Pending JPH07120496A (en) | 1993-10-25 | 1993-10-25 | Acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120496A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006120886A1 (en) * | 2005-05-09 | 2006-11-16 | Denso Corporation | Semiconductor device having elemental device part and method for manufacturing same |
-
1993
- 1993-10-25 JP JP5266039A patent/JPH07120496A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006120886A1 (en) * | 2005-05-09 | 2006-11-16 | Denso Corporation | Semiconductor device having elemental device part and method for manufacturing same |
| JP2006344934A (en) * | 2005-05-09 | 2006-12-21 | Denso Corp | Semiconductor device and method for manufacturing same |
| JP4710700B2 (en) * | 2005-05-09 | 2011-06-29 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
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