JPH07118460B2 - Plasma CVD equipment - Google Patents
Plasma CVD equipmentInfo
- Publication number
- JPH07118460B2 JPH07118460B2 JP25743087A JP25743087A JPH07118460B2 JP H07118460 B2 JPH07118460 B2 JP H07118460B2 JP 25743087 A JP25743087 A JP 25743087A JP 25743087 A JP25743087 A JP 25743087A JP H07118460 B2 JPH07118460 B2 JP H07118460B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- source gas
- substrate
- gas outflow
- mesh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はプラズマCVD（Chemical Vapour Deposition）
法により、基板上に薄膜を形成するプラズマCVD装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is plasma CVD (Chemical Vapor Deposition).
The present invention relates to a plasma CVD apparatus for forming a thin film on a substrate by a method.
［従来技術］ 従来のプラズマCVD装置は、第４図に示すように、真空
反応容器１内の基板ヒータ２の上に処理すべき基板３を
寝かせて設置し、基板３の上方には基板ヒータ２に対向
させて電極４を設置し、該電極４と基板ヒータ２との間
に高周波電源５から高周波電力を印加し、また真空反応
容器１内にはパイプよりなる原料ガス供給手段６で原料
ガスを供給し、プラズマCVD法で基板４の表面に薄膜を
形成する構造であった。[Prior Art] In a conventional plasma CVD apparatus, as shown in FIG. 4, a substrate 3 to be processed is laid down on a substrate heater 2 in a vacuum reaction container 1, and a substrate heater is provided above the substrate 3. 2, an electrode 4 is installed facing the electrode 2, a high frequency power is applied from a high frequency power source 5 between the electrode 4 and the substrate heater 2, and a raw material gas supply means 6 composed of a pipe is used in the vacuum reaction container 1 to feed the raw material. The structure was such that a gas was supplied and a thin film was formed on the surface of the substrate 4 by the plasma CVD method.
［発明が解決しようとする問題点］ しかしながら、このような構造では、基板３の片面（上
側となった面）にしか薄膜を形成できないので、もう一
方の面にも薄膜を形成する作業をもう一度行わなければ
ならず、能率が悪い問題点があった。[Problems to be Solved by the Invention] However, in such a structure, since a thin film can be formed only on one surface (upper surface) of the substrate 3, the work of forming a thin film on the other surface is performed again. It had to be done, and there was a problem of inefficiency.
本発明の目的は、基板の両面に同時に薄膜を形成できる
プラズマCVD装置を提供することにある。An object of the present invention is to provide a plasma CVD apparatus capable of simultaneously forming thin films on both sides of a substrate.
［問題点を解決するための手段］ 上記の目的を達成するための本発明の構成を説明する
と、本発明のプラズマCVD装置は真空反応容器内に１対
の原料ガス流出電極が相互に向い合せに配置され、前記
両原料ガス流出電極間に１対のメッシュ電極が前記各原
料ガス流出電極に向い合せて配置され、前記両メッシュ
電極間には処理用の基板を位置させる基板設置空間が設
けられ、前記両原料ガス流出電極にはこれら電極の各原
料ガス流出孔から原料ガスを前記メッシュ電極に向けて
流出させるように原料ガス供給手段が設けられているこ
とを特徴とする。[Means for Solving the Problems] To explain the constitution of the present invention for achieving the above object, in the plasma CVD apparatus of the present invention, a pair of source gas outflow electrodes face each other in a vacuum reaction vessel. And a pair of mesh electrodes are disposed between the two source gas outflow electrodes so as to face the source gas outflow electrodes, and a substrate installation space for positioning a substrate for processing is provided between the both mesh electrodes. The raw material gas outflow electrodes are provided with a raw material gas supply means for causing the raw material gas to flow out from the respective raw material gas outflow holes of these electrodes toward the mesh electrode.
［作用］ このようにすると、基板の両側のメッシュ電極とこれに
対向する原料ガス流出電極間にプラズマを発生させるこ
とができ、且つこれらメッシュ電極を通して原料ガス流
出電極からの原料ガスを基板の両面に受けて、基板の両
面に同時に薄膜が形成できる。[Operation] With this configuration, plasma can be generated between the mesh electrodes on both sides of the substrate and the source gas outflow electrodes facing the mesh electrodes, and the source gas from the source gas outflow electrodes is passed through these mesh electrodes on both sides of the substrate. Therefore, thin films can be formed on both sides of the substrate at the same time.
［実施例］ 以下、本発明の実施例を第１図乃至第３図を参照して詳
細に説明する。本実施例のプラズマCVD装置において
は、真空反応容器１内に１対の原料ガス流出電極７が垂
直向きで向い合せにして互に平行に配置されている。各
原料ガス流出電極７は、金属製であって多数のガス流出
孔８が分散して設けられている。各原料ガス流出電極７
の裏面には、金属製で漏斗状をした分配室形成体9Aと、
これに原料ガスを供給する金属製の配管9Bとからなる原
料ガス供給手段９が設けられている。原料ガス流出電極
７は原料ガス供給手段９を介してアースされている。向
い合せの原料ガス流出電極７間には、網目状をなす１対
のメッシュ電極10が垂直向きで向い合せにして原料ガス
流出電極７に対して平行に配置されている。各メッシュ
電極10は高周波電源５から図示しないマッチングボック
スを介して高周波電力が印加されるようになっている。
両メッシュ電極10間には、処理用の基板３を位置させる
基板設置空間11が設けられている。この基板設置空間11
内には、処理用の基板３が垂直向きで、両側のメッシュ
電極９に平行で且つ等間隔となるように配置されるよう
になっている。基板３はホルダー12に支持され、ホルダ
ー12は台車13上に固設され、台車13はベース14上に走行
するようになっている。真空反応容器１の下部には図示
しない真空ポンプで真空引きするための排気管15が接続
されている。[Embodiment] Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3. In the plasma CVD apparatus of the present embodiment, a pair of source gas outflow electrodes 7 are arranged in parallel in a vertical direction in a vacuum reactor 1 so as to face each other. Each source gas outflow electrode 7 is made of metal and has a large number of gas outflow holes 8 dispersed therein. Each source gas outflow electrode 7
On the back surface of the metal, a funnel-shaped distribution chamber forming body 9A,
A raw material gas supply means 9 including a metal pipe 9B for supplying the raw material gas is provided therein. The source gas outflow electrode 7 is grounded via the source gas supply means 9. Between the facing source gas outflow electrodes 7, a pair of mesh-shaped mesh electrodes 10 are arranged vertically and face each other in parallel to the source gas outflow electrodes 7. High frequency power is applied to each mesh electrode 10 from a high frequency power source 5 through a matching box (not shown).
A substrate installation space 11 for positioning the processing substrate 3 is provided between the mesh electrodes 10. This board installation space 11
The processing substrates 3 are arranged therein in a vertical direction, in parallel with the mesh electrodes 9 on both sides and at equal intervals. The substrate 3 is supported by a holder 12, the holder 12 is fixedly mounted on a carriage 13, and the carriage 13 runs on a base 14. An exhaust pipe 15 is connected to the lower portion of the vacuum reaction container 1 to evacuate with a vacuum pump (not shown).
このようなプラズマCVD装置では、両側の原料ガス供給
手段９からキャリアガスと共に供給された原料ガスを、
両原料ガス流出電極７のガス流出孔８からメッシュ電極
10を経て基板３の両面側に流出させる。両メッシュ電極
10に高周波電力を印加すると、プラズマは両メッシュ電
極10とそれに対向する原料ガス流出電極７との間に起こ
り、これらの間で原料ガスが活性化され、基板３の両面
に共に成膜される。この場合、メッシュ電極10にかける
高周波の周波数は13.56MHzとする。基板３とメッシュ電
極10との間の距離は10mm以下とし、プラズマ中に基板３
が存在するようにする。なお、上記実施例のようにメッ
シュ電極10に高周波をかける方が、原料ガス流出電極７
をアースしない電極にして高周波をかけるより、硬い薄
膜を基板３上に成膜できる。柔かい成膜を必要とする場
合には、原料ガス流出電極７に高周波をかけるようにす
ればよい。In such a plasma CVD apparatus, the raw material gas supplied together with the carrier gas from the raw material gas supply means 9 on both sides is
From the gas outflow holes 8 of both source gas outflow electrodes 7 to the mesh electrode
It flows out to both sides of the substrate 3 via 10. Both mesh electrodes
When high frequency power is applied to the plasma 10, plasma is generated between the mesh electrodes 10 and the source gas outflow electrode 7 facing the mesh electrodes 10, the source gas is activated between them, and a film is formed on both surfaces of the substrate 3 together. . In this case, the high frequency applied to the mesh electrode 10 is 13.56 MHz. The distance between the substrate 3 and the mesh electrode 10 should be 10 mm or less, and the substrate 3 should be immersed in the plasma.
To exist. It is to be noted that the source gas outflow electrode 7 is better when a high frequency is applied to the mesh electrode 10 as in the above embodiment.
A hard thin film can be formed on the substrate 3 by using a non-grounded electrode and applying a high frequency. If a soft film formation is required, a high frequency may be applied to the source gas outflow electrode 7.
実験例 基板３は8.89cm（3.5″）のAl製ハードディスクとし
た。原料ガスはArガスをキャリアガスとして搬送させ
た。高周波電源のパワーは100Wとした。原料ガス流出電
極７間の距離は40〜50mmとし、メッシュ電極10間の距離
は20〜10mmとした。基板３は台車13で図示しない予備室
から移動させてきて、メッシュ電極10間の中央にセット
し、ここで停止させ、約30秒間プラズマ中で成膜を行っ
た。30秒後に台車13を駆動して基板３を別室に移動させ
た。なお、ホルダー12は絶縁物で構成した。原料ガス流
出電極７及びメッシュ電極10はステンレス製とし、キャ
リアガスArはマスフローコントローラで流量が一定とな
るように制御した。Experimental Example Substrate 3 was an 8.89 cm (3.5 ″) hard disk made of Al. The source gas was Ar gas as a carrier gas. The power of the high frequency power source was 100 W. The distance between the source gas outflow electrodes 7 was 40. The distance between the mesh electrodes 10 was set to 50 mm, and the distance between the mesh electrodes 10 was set to 20 to 10 mm.The substrate 3 was moved from a preliminary chamber (not shown) by the carriage 13 and was set at the center between the mesh electrodes 10 and stopped there. After 30 seconds, the film was formed in plasma.After 30 seconds, the carriage 13 was driven to move the substrate 3 to another chamber, where the holder 12 was made of an insulating material, and the source gas outflow electrode 7 and the mesh electrode 10 were made of stainless steel. The carrier gas Ar was controlled by a mass flow controller so that the flow rate was constant.
成膜する前に基板３は、図示しない予備室で加熱を行
い、真空反応容器１内に移動させるようにした。真空反
応容器１内での成膜後に、基板３を後処理室に移動し、
酸素雰囲気に入れ、その後、後処理室から取り出した。
予備室では、輻射加熱により加熱を行った。Prior to film formation, the substrate 3 was heated in a preliminary chamber (not shown) and moved into the vacuum reaction container 1. After film formation in the vacuum reaction container 1, the substrate 3 is moved to the post-treatment chamber,
It was placed in an oxygen atmosphere and then removed from the post-treatment chamber.
In the spare room, heating was performed by radiant heating.
メッシュ電極10のメッシュ数は、数が少ないと、プラズ
マが均一とはならない。また、メッシュ数が多過ぎる
と、基板３にモノマが届かない。そこで種々検討の結
果、メッシュ数は５〜50メッシュ/2.54cmとした。If the number of meshes of the mesh electrode 10 is small, the plasma will not be uniform. If the number of meshes is too large, the monomer does not reach the substrate 3. Therefore, as a result of various studies, the number of meshes was set to 5 to 50 mesh / 2.54 cm.
ホルダー12は、基板３を１対のメッシュ電極10間の中央
に安定して供給するため、基板３の外周全体をホールド
する構造のものが好ましい。Since the holder 12 stably supplies the substrate 3 to the center between the pair of mesh electrodes 10, the holder 12 preferably has a structure that holds the entire outer periphery of the substrate 3.
原料ガス流出電極７及びメッシュ電極10を大型化する
と、複数枚の基板３の同時両面成膜を行うことができ
る。By enlarging the source gas outflow electrode 7 and the mesh electrode 10, it is possible to perform simultaneous double-sided film formation on a plurality of substrates 3.
［発明の効果］ 以上説明したように本発明に係るプラズマCVD装置で
は、１対の原料ガス流出電極間に１対のメッシュ電極を
配置し、両メッシュ電極とこれに対向する原料ガス流出
電極間に高周波電力を印加してプラズマを発生するよう
にし、両メッシュ電極間に基板を配置して成膜を行わせ
るようにしたので、基板の両面に同時に成膜を行わせる
ことができる。従って、本発明によれば、プラズマCVD
法による成膜を能率よく行うことがができる。また、本
発明では、メッシュ電極を用いたので、基板には高周波
電力を印加する必要がなくなり、従って基板を移動して
の成膜処理も可能となり、大量生産も工業的に可能にす
ることができる。[Effects of the Invention] As described above, in the plasma CVD apparatus according to the present invention, a pair of mesh electrodes are arranged between a pair of source gas outflow electrodes, and both mesh electrodes and the source gas outflow electrodes facing them are disposed. Since high-frequency power is applied to the substrate to generate plasma and the substrate is placed between both mesh electrodes to perform film formation, it is possible to simultaneously perform film formation on both surfaces of the substrate. Therefore, according to the present invention, plasma CVD
The film formation by the method can be performed efficiently. Further, in the present invention, since the mesh electrode is used, it is not necessary to apply high-frequency power to the substrate, and therefore, the film formation process by moving the substrate is possible, and mass production can be industrially enabled. it can.
第１図は本発明に係るプラズマCVD装置の一実施例を示
す縦断面図、第２図及び第３図は第１図で用いている原
料ガス流出電極及びメッシュ電極の各正面図、第４図は
従来のプラズマCVD装置の縦断面図である。 １……真空反応容器、３……基板、５……高周波電源、
７……原料ガス流出電極、８……原料ガス流出孔、９…
…原料ガス供給手段、9A……分配室形成体、9B……配
管、10……メッシュ電極、11……基板設置空間、12……
ホルダー、13……台車、14……ベース。FIG. 1 is a longitudinal sectional view showing an embodiment of the plasma CVD apparatus according to the present invention, FIGS. 2 and 3 are front views of the source gas outflow electrode and the mesh electrode used in FIG. 1, and FIG. The figure is a vertical cross-sectional view of a conventional plasma CVD apparatus. 1 ... Vacuum reactor, 3 ... Substrate, 5 ... High frequency power supply,
7 ... Raw material gas outflow electrode, 8 ... Raw material gas outflow hole, 9 ...
... Source gas supply means, 9A ... Distribution chamber forming body, 9B ... Piping, 10 ... Mesh electrode, 11 ... Substrate installation space, 12 ...
Holder, 13 ... dolly, 14 ... base.
Claims (1)
が相互に向い合せに配置され、前記両原料ガス流出電極
間に１対のメッシュ電極が前記各原料ガス流出電極に向
い合せて配置され、前記両メッシュ電極間には処理用の
基板を位置させる基板設置空間が設けられ、前記両原料
ガス流出電極にはこれら電極の各原料ガス流出孔から原
料ガスを前記メッシュ電極に向けて流出させるように原
料ガス供給手段が設けられていることを特徴とするプラ
ズマCVD装置。1. A pair of source gas outflow electrodes are arranged in a vacuum reaction vessel so as to face each other, and a pair of mesh electrodes are placed between the source gas outflow electrodes so as to face each source gas outflow electrode. A substrate installation space for arranging a substrate for processing is provided between the mesh electrodes, and the source gas outflow electrodes of the both source gas outflow holes of these electrodes direct the source gas toward the mesh electrode. A plasma CVD apparatus characterized in that a source gas supply means is provided so as to flow out.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25743087A JPH07118460B2 (en) | 1987-10-14 | 1987-10-14 | Plasma CVD equipment |
| US07/368,312 US4991542A (en) | 1987-10-14 | 1988-10-14 | Method of forming a thin film by plasma CVD and apapratus for forming a thin film |
| PCT/JP1988/001043 WO1989003587A1 (en) | 1987-10-14 | 1988-10-14 | Method and apparatus for thin film formation by plasma cvd |
| EP88908981A EP0336979B1 (en) | 1987-10-14 | 1988-10-14 | Apparatus for thin film formation by plasma cvd |
| KR1019890700595A KR930003136B1 (en) | 1987-10-14 | 1988-10-14 | Method and apparatus for thinfilm formation by plasma cvd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25743087A JPH07118460B2 (en) | 1987-10-14 | 1987-10-14 | Plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100915A JPH01100915A (en) | 1989-04-19 |
| JPH07118460B2 true JPH07118460B2 (en) | 1995-12-18 |
Family
ID=17306256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25743087A Expired - Fee Related JPH07118460B2 (en) | 1987-10-14 | 1987-10-14 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118460B2 (en) |
-
1987
- 1987-10-14 JP JP25743087A patent/JPH07118460B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01100915A (en) | 1989-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |