JPH07118389B2 - Thin film EL device - Google Patents
Thin film EL deviceInfo
- Publication number
- JPH07118389B2 JPH07118389B2 JP62008484A JP848487A JPH07118389B2 JP H07118389 B2 JPH07118389 B2 JP H07118389B2 JP 62008484 A JP62008484 A JP 62008484A JP 848487 A JP848487 A JP 848487A JP H07118389 B2 JPH07118389 B2 JP H07118389B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric
- dielectric layer
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 claims description 19
- QENHCSSJTJWZAL-UHFFFAOYSA-N magnesium sulfide Chemical compound [Mg+2].[S-2] QENHCSSJTJWZAL-UHFFFAOYSA-N 0.000 claims description 14
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 claims description 12
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000005083 Zinc sulfide Substances 0.000 description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- 241001175904 Labeo bata Species 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910016655 EuF 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- RGZQGGVFIISIHZ-UHFFFAOYSA-N strontium titanium Chemical compound [Ti].[Sr] RGZQGGVFIISIHZ-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Description
【発明の詳細な説明】 産業上の利用分野 この発明はキャラクタやグラフィックスなどの表示に用
いる薄膜EL素子に関するものであり、さらに詳しくは、
発光特性が長期にわたって安定な薄膜EL素子に関する。TECHNICAL FIELD The present invention relates to a thin film EL element used for displaying characters, graphics and the like, and more specifically,
The present invention relates to a thin film EL device having a stable light emitting property for a long time.
従来の技術 従来より電場発光蛍光体を用いた固体映像表示装置とし
てＸ−Ｙマトリクス表示装置が知られている。この装置
は、電場発光層の両面に水平平行電極群と垂直平行電極
群とを互いに直交するように配置し、それぞれの電極群
に接続された給電線により切換え装置を通して信号を加
えて、両電極の交点部分の電場発光層（以下EL発光体層
と略称する）を発光させ（この交点の発光部分面を絵素
と称する）、発光した絵素の組み合わせによって文字記
号、図形等を表示させるものである。2. Description of the Related Art Conventionally, an XY matrix display device has been known as a solid-state image display device using an electroluminescent phosphor. In this device, a group of horizontal parallel electrodes and a group of vertical parallel electrodes are arranged on both sides of the electroluminescent layer so as to be orthogonal to each other, and a signal is applied through a switching device by a feeder line connected to each of the electrode groups so that both electrodes are The electroluminescent layer (hereinafter abbreviated as EL light emitting layer) at the intersection point of is made to emit light (the light emitting portion surface of this intersection is called a picture element), and character symbols, figures, etc. are displayed by the combination of the emitted picture elements. Is.
ここで用いられる固体映像表示装置の表示板としては、
通常、ガラス等の透光性基板上に透明な平行電極群を形
成し、その上に第１誘電体層、EL発光体層、第２誘電体
層を順次積層し、さらにその上に背面平行電極群を下層
の透明平行電極群に直交する配置で積層して形成する。
一般に透明平行電極としては平滑なガラス基板上に酸化
錫を被着するなどにより形成される。これに直交し、対
向する背面電極としてはアルミニウムが真空蒸着などに
より形成される。As the display plate of the solid-state image display device used here,
Usually, a transparent parallel electrode group is formed on a transparent substrate such as glass, and a first dielectric layer, an EL light emitting layer, and a second dielectric layer are sequentially laminated on the transparent parallel electrode group, and the back surface is parallel to the back. The electrode group is formed by laminating the transparent parallel electrode group of the lower layer in an arrangement orthogonal to each other.
Generally, a transparent parallel electrode is formed by depositing tin oxide on a smooth glass substrate. Aluminum is formed by vacuum vapor deposition or the like as a back electrode which is orthogonal to and opposite to this.
第１誘電体層や第２誘電体層に用いる材料としては、誘
電率が大きく、絶縁破壊電界強度が大きい材料が低電圧
駆動に適している。前者は、主に透明電極および背面電
極により印加される電圧の、より多くの割合をEL発光体
層に印加し、駆動電圧を低下させるためであり、後者は
主に絶縁破壊を起こさない安定な動作のために重要であ
る。このような低電圧で駆動ができ、安定性の優れた薄
膜EL素子を構成するための誘電体層としては、誘電率の
大きな酸化物誘電体薄膜（特開昭56−45595号公報参
照）の方が法が誘電率が小さな酸化珪素や窒化珪素（特
公昭53−42398号公報）より適しており、酸化物誘電体
薄膜を用いた薄膜EL素子が広く研究されている。As a material used for the first dielectric layer and the second dielectric layer, a material having a large dielectric constant and a large dielectric breakdown electric field strength is suitable for low voltage driving. The former is mainly for applying a larger proportion of the voltage applied by the transparent electrode and the back electrode to the EL light emitting layer to lower the driving voltage, and the latter is mainly for stable and non-dielectric breakdown. Important for operation. As a dielectric layer for forming a thin film EL element which can be driven at such a low voltage and has excellent stability, an oxide dielectric thin film having a large dielectric constant (see Japanese Patent Laid-Open No. 56-45595) is used. The method is more suitable than silicon oxide or silicon nitride having a low dielectric constant (Japanese Patent Publication No. 53-42398), and thin film EL devices using oxide dielectric thin films have been widely studied.
発明が解決しようとする問題点 マトリクス状電極を有する薄膜EL素子を、一斉反転方式
により線順次駆動（特公昭55−27354号公報）し、１走
査期間で２回の発光を行わせる場合、透明電極と背面電
極に挟まれた各絵素においては、正極性のパルスが印加
されてから逆方向のパルスが印加されるまでの時間と、
逆極性のパルスが印加されてから正極性のパルスが印加
されるまでの時間が異なる。このような正・逆パルスの
位相が異なる駆動法により従来技術による薄膜EL素子を
長時間駆動した場合、表示情報に応じて発光させた絵素
では、発光させなかった絵素と比較して、発光開始電圧
が数ボルト変動するという問題点があった。Problems to be Solved by the Invention When a thin film EL element having a matrix-like electrode is line-sequentially driven by a simultaneous reversal method (Japanese Patent Publication No. 55-27354) to emit light twice in one scanning period, it is transparent. In each picture element sandwiched between the electrode and the back electrode, the time from the application of the positive pulse to the application of the reverse pulse,
The time from the application of the reverse polarity pulse to the application of the positive polarity pulse is different. When a thin film EL element according to the related art is driven for a long time by a driving method in which the phases of the forward and reverse pulses are different from each other, a pixel element that emits light according to display information is compared with a pixel element that does not emit light. There is a problem that the light emission starting voltage fluctuates by several volts.
本発明の目的は、前記問題点を解決し、位相が異なる交
流パルスや正・逆方向の振幅が異なる交流パルスで駆動
しても、長期間に渡り安定した動作が可能な薄膜EL素子
を提供することにある。An object of the present invention is to solve the above problems and provide a thin film EL element capable of stable operation for a long period of time even when driven by AC pulses having different phases or AC pulses having different amplitudes in the forward and reverse directions. To do.
問題点を解決するための手段 本発明によれば、透光性基板上に、透明電極、第１誘電
体層、EL発光体層、第２誘電体層、および背面電極を順
次積層してなる薄膜EL素子において、第１誘電体層およ
び第２誘電体層と前記EL発光体層の間に、硫化マグネシ
ウム薄膜と硫化バリウム薄膜の内少なくとも一方を形成
する。According to the present invention, a transparent electrode, a first dielectric layer, an EL light emitting layer, a second dielectric layer, and a back electrode are sequentially laminated on a transparent substrate. In the thin film EL device, at least one of a magnesium sulfide thin film and a barium sulfide thin film is formed between the first and second dielectric layers and the EL light emitting layer.
作用 発光開始電圧の変動は、EL発光体層と誘電体層との界面
に種々の深さのトラップ準位が形成されることや、EL発
光体層と誘電体層との反応により生じ、従って、その界
面に硫化マグネシウムあるいは硫化バリウム薄膜を介在
させることにより、変動の原因が解消されるものと考え
られる。Action The fluctuation of the light emission starting voltage occurs due to the formation of trap levels of various depths at the interface between the EL light emitting layer and the dielectric layer and the reaction between the EL light emitting layer and the dielectric layer, and By interposing a thin film of magnesium sulfide or barium sulfide at the interface, it is considered that the cause of the fluctuation is eliminated.
実施例 第１図は本発明にかかる薄膜EL素子の断面構造を示す。
図において、１はガラス基板であり、コーニング7059ガ
ラスを用いた。ガラス基板１上に、スパッタリング法に
より厚さ200nmの錫添加酸化インジウム薄膜を形成し、
ホトリソグラフィ技術によりストライプ状に加工し透明
電極２とした。その上にチタンジルコン酸ストロンチウ
ム［Sr（TixZr1−ｘ）O3］を基板温度400℃でスパッタ
リングすることにより、厚さ600nmの酸化物誘電体薄膜
３を形成した。さらにその上に、硫化マグネシウムペレ
ットを蒸発源として基板温度300℃で電子ビーム蒸着す
ることにより厚さ50nmの硫化マグネシウム薄膜４を形成
した。硫化マグネシウム薄膜４の上には、共蒸着法によ
り、基板温度200℃で、厚さ500nmのマンガン添加硫化亜
鉛薄膜からなるEL発光体層５を形成した。真空中で450
℃、１時間熱処理の後、その上に再び硫化マグネシウム
ペレットを蒸発源として基板温度300℃で電子ビーム蒸
着することにより厚さ50nmの硫化マグネシウム薄膜６を
形成した。その上にタンタル酸バリウム［BaTa2O6］焼
結体を、基板温度150℃でスパッタリングすることによ
り厚さ200nmの酸化物誘電体薄膜７を形成した。最後に
その上に厚さ150nmのAlを真空蒸着し、ホトリソグラフ
ィ技術により、透明電極２とは直交する方向にストライ
プ状の背面電極８を形成し、薄膜EL素子ａを完成した。EXAMPLE FIG. 1 shows a cross-sectional structure of a thin film EL device according to the present invention.
In the figure, 1 is a glass substrate, and Corning 7059 glass was used. A tin-doped indium oxide thin film having a thickness of 200 nm is formed on the glass substrate 1 by a sputtering method,
A transparent electrode 2 was obtained by processing it into a stripe shape by a photolithography technique. Then, strontium titanium zirconate [Sr (TixZr 1 -x) O 3 ] was sputtered thereon at a substrate temperature of 400 ° C. to form an oxide dielectric thin film 3 having a thickness of 600 nm. Further, a magnesium sulfide thin film 4 having a thickness of 50 nm was formed thereon by electron beam evaporation at a substrate temperature of 300 ° C. using magnesium sulfide pellets as an evaporation source. On the magnesium sulfide thin film 4, an EL light emitting layer 5 made of a 500 nm thick manganese-doped zinc sulfide thin film was formed at a substrate temperature of 200 ° C. by a co-evaporation method. 450 in vacuum
After heat treatment at 1 ° C. for 1 hour, a magnesium sulfide thin film 6 having a thickness of 50 nm was formed thereon by electron beam evaporation at a substrate temperature of 300 ° C. using magnesium sulfide pellets as an evaporation source again. A barium tantalate [BaTa 2 O 6 ] sintered body was sputtered thereon at a substrate temperature of 150 ° C. to form an oxide dielectric thin film 7 having a thickness of 200 nm. Finally, a 150 nm-thick Al film was vacuum-deposited thereon, and a stripe-shaped back electrode 8 was formed in the direction orthogonal to the transparent electrode 2 by a photolithography technique to complete the thin film EL element a.
本発明の薄膜EL素子ｂは薄膜EL素子ａと同様にガラス基
板上に、スパッタリング法により厚さ200nmの錫添加酸
化インジウム薄膜を形成し、ホトリソグラフィ技術によ
りストライプ状に加工し透明電極とした。その上にタン
タル酸バリウム［BaTa2O6］を基板温度150℃でスパッタ
リングすることにより、厚さ300nmの酸化物誘電体薄膜
を形成した。さらにその上に、硫化バリウムペレットを
蒸発源として、基板温度300℃で電子ビーム蒸着するこ
とにより、厚さ50nmの硫化バリウム薄膜を形成した。硫
化バリウム薄膜の上には、共蒸着法により、基板温度20
0℃で、厚さ400nmのマンガン添加硫化亜鉛薄膜からなる
EL発光体層を形成した。真空中で550℃、１時間熱処理
の後、その上に再び硫化バリウムペレットを蒸発源とし
て基板温度300℃で電子ビーム蒸着することにより厚さ5
0nmの硫化バリウム薄膜を形成した。その上にタンタル
酸バリウム［BaTa2O6］焼結体を、基板温度150℃でスパ
ッタリングすることにより厚さ300nmの酸化物誘電体薄
膜を形成した。最後にその上に厚さ150nmのAlを真空蒸
着し、ホトリソグラフィ技術により、透明電極とは直交
する方向にストライプ状の背面電極を形成し、薄膜EL素
子ｂを完成した。In the thin film EL device b of the present invention, as in the case of the thin film EL device a, a tin-doped indium oxide thin film having a thickness of 200 nm was formed on a glass substrate by a sputtering method and processed into a stripe shape by a photolithography technique to form a transparent electrode. Barium tantalate [BaTa 2 O 6 ] was sputtered thereon at a substrate temperature of 150 ° C. to form an oxide dielectric thin film having a thickness of 300 nm. Furthermore, a barium sulfide thin film having a thickness of 50 nm was formed thereon by electron beam evaporation at a substrate temperature of 300 ° C. using barium sulfide pellets as an evaporation source. On the barium sulfide thin film, the substrate temperature was 20
Consisting of 400nm thick manganese-doped zinc sulfide thin film at 0 ℃
An EL phosphor layer was formed. After heat treatment in vacuum at 550 ° C for 1 hour, barium sulfide pellets were again used as an evaporation source to perform electron beam evaporation at a substrate temperature of 300 ° C to obtain a thickness of 5
A 0 nm barium sulfide thin film was formed. A barium tantalate [BaTa 2 O 6 ] sintered body was sputtered thereon at a substrate temperature of 150 ° C. to form an oxide dielectric thin film having a thickness of 300 nm. Finally, a 150 nm-thick Al film was vacuum-deposited thereon, and a stripe-shaped back electrode was formed in the direction orthogonal to the transparent electrode by photolithography to complete a thin film EL device b.
本発明の薄膜EL素子ａ、薄膜EL素子ｂ及びそれからマン
ガン添加硫化亜鉛薄膜の両側の硫化マグネシウム薄膜な
いし硫化バリウム薄膜を除いた従来の薄膜EL素子ｃと薄
膜EL素子ｄに、第２図に示すような位相の異なる交流パ
ルス電圧を印加し、発光開始電圧の経時変化を測定した
ところ、第３図に示すように、従来の薄膜EL素子では10
0時間で約４〜６％発光開始電圧が低下したのに対し
（第３図c,d）、本発明の薄膜EL素子では１％以下であ
った（第３図a,b）。FIG. 2 shows the thin film EL device a, the thin film EL device b, and the conventional thin film EL device c and thin film EL device d excluding the magnesium sulfide thin film or barium sulfide thin film on both sides of the manganese-added zinc sulfide thin film shown in FIG. When AC pulse voltages with different phases were applied and the time-dependent change of the light emission starting voltage was measured, as shown in FIG.
The light emission starting voltage was reduced by about 4 to 6% at 0 hours (Figs. 3c and d), whereas it was 1% or less in the thin film EL device of the present invention (Figs. 3a and 3b).
本実施例では硫化マグネシウム薄膜ないし硫化バリウム
薄膜をEL発光体層の両側に形成したが、第１誘電体層側
だけに形成した場合でも、効果は多少落ちるが有効であ
った。In this embodiment, the magnesium sulfide thin film or the barium sulfide thin film is formed on both sides of the EL light emitting layer, but even when it is formed only on the first dielectric layer side, the effect is slightly lowered, but it is effective.
硫化マグネシウム薄膜と硫化バリウム薄膜の厚さは、10
nmより薄い場合は、発光開始電圧の経時変化を抑制する
効果が少なかった。The thickness of magnesium sulfide thin film and barium sulfide thin film is 10
When the thickness was less than nm, the effect of suppressing the change in the light emission starting voltage with time was small.
EL発光体層としては、活性物質を含む硫化亜鉛（ZnS）
を用いることができる。活性物質としては、Mn,Cu,Ag,A
u,TbF3,SmF3,ErF3,TmF3,DyF3,PrF3,EuF3などが適当であ
る。EL発光体層は硫化亜鉛以外のものでもよく、たとえ
ば活性物質を含むSrSやCaSなどの電場発光を示すもので
あればよい。Zinc sulphide (ZnS) containing active substance for EL phosphor layer
Can be used. As the active substance, Mn, Cu, Ag, A
u, TbF 3 , SmF 3 , ErF 3 , TmF 3 , DyF 3 , PrF 3 and EuF 3 are suitable. The EL light emitting layer may be made of a material other than zinc sulfide, and may be any material that exhibits electroluminescence such as SrS or CaS containing an active substance.
誘電体薄膜を比誘電率と絶縁破壊電界強度の積が大きい
ほど好ましい。このような誘電体薄膜としては、ペロブ
スカイト組成酸化物薄膜とタングステンブロンズ組成酸
化物薄膜が適していた。その中でもSrTiO3,SrxMg1−xTi
O3,SrTixZr1−xO3,あるいはSrxMg1−xTiyZr1−yO3など
のチタン酸ストロンチウム系の薄膜とBaTa2O6、BaxSr1
−xTa2O6などのタンタル酸バリウム系薄膜は、硫化マグ
ネシウム薄膜や硫化バリウム薄膜と反応等の相互作用も
なく、これらを第１誘電体層に用いれば極めて安定な薄
膜EL素子を構成することができた。又、タンタル酸バリ
ウム系薄膜を第２誘電体層に用いることにより、伝播性
絶縁破壊を抑制することができ、信頼性の高い薄膜EL素
子を形成する事ができた。It is preferable that the dielectric thin film has a larger product of the relative permittivity and the dielectric breakdown electric field strength. As such a dielectric thin film, a perovskite composition oxide thin film and a tungsten bronze composition oxide thin film were suitable. Among them, SrTiO 3 , SrxMg 1 −xTi
O 3, SrTixZr 1 -xO 3 or SrxMg 1 -xTiyZr 1 -yO of strontium titanate, such as 3 thin film and BaTa 2 O 6, BaxSr 1,
Barium tantalate-based thin films such as -xTa 2 O 6 do not interact with magnesium sulfide thin films or barium sulfide thin films, and if they are used for the first dielectric layer, they should form extremely stable thin film EL devices. I was able to. Further, by using the barium tantalate-based thin film for the second dielectric layer, it is possible to suppress the transmissive dielectric breakdown and form a highly reliable thin film EL element.
発明の効果 以上のように本発明によれば、長時間の駆動に際しても
発光開始電圧の変動が極めて小さい薄膜EL素子を、再現
性良く形成することができ、コンピュータ端末などの薄
形、高品位ディスプレィなどに広く利用でき、実用的価
値が大きい。EFFECTS OF THE INVENTION As described above, according to the present invention, it is possible to form a thin film EL element with extremely small fluctuation in the light emission starting voltage even when it is driven for a long time with good reproducibility. It can be widely used for displays and has great practical value.
第１図は本発明にかかる薄膜EL素子の構成を示す断面
図、第２図は薄膜EL素子の駆動電圧波形を示す図、第３
図は発光開始電圧の経時変化を示す図である。 １……ガラス基板、２……透明電極、３……誘電体薄
膜、４……硫化マグネシウム薄膜、５……EL発光体層、
６……硫化マグネシウム薄膜、７……誘電体薄膜、８…
…背面電極。FIG. 1 is a sectional view showing the structure of a thin film EL element according to the present invention, FIG. 2 is a diagram showing a driving voltage waveform of the thin film EL element, and FIG.
The figure is a diagram showing changes with time in the light emission starting voltage. 1 ... glass substrate, 2 ... transparent electrode, 3 ... dielectric thin film, 4 ... magnesium sulfide thin film, 5 ... EL light emitting layer,
6 ... Magnesium sulfide thin film, 7 ... Dielectric thin film, 8 ...
... back electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 任田 隆夫 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 松岡 富造 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 阿部 惇 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takao Nita 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Tomizo Matsuoka, 1006 Kadoma, Kadoma City Osaka Prefecture (72) Inventor Atsushi Abe 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (4)
層、EL発光体層、第２誘電体層、および背面電極を順次
積層してなる薄膜EL素子において、前記第１誘電体層お
よび前記第２誘電体層と前記EL発光体層の間に各々、硫
化マグネシウム薄膜と硫化バリウム薄膜の内少なくとも
一方が形成されていることを特徴とする薄膜EL素子。1. A thin-film EL device comprising a transparent substrate, a transparent electrode, a first dielectric layer, an EL light emitting layer, a second dielectric layer, and a back electrode, which are sequentially laminated on the transparent substrate. At least one of a magnesium sulfide thin film and a barium sulfide thin film is formed between the body layer and the second dielectric layer and the EL light emitting layer, respectively.
物誘電体薄膜であることを特徴とする特許請求の範囲第
１項記載の薄膜EL素子。2. The thin film EL element according to claim 1, wherein the first dielectric layer is an oxide dielectric thin film having a perovskite composition.
チタン酸ストロンチウム系薄膜で構成されたことを特徴
とする特許請求の範囲第２項記載の薄膜EL素子。3. The thin film EL device according to claim 2, wherein the oxide dielectric thin film having a perovskite composition is composed of a strontium titanate thin film.
も一方がタンタル酸バリウム系薄膜であることを特徴と
する特許請求の範囲第１項記載の薄膜EL素子。4. The thin film EL element according to claim 1, wherein at least one of the first dielectric layer and the second dielectric layer is a barium tantalate-based thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008484A JPH07118389B2 (en) | 1987-01-16 | 1987-01-16 | Thin film EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62008484A JPH07118389B2 (en) | 1987-01-16 | 1987-01-16 | Thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63175379A JPS63175379A (en) | 1988-07-19 |
| JPH07118389B2 true JPH07118389B2 (en) | 1995-12-18 |
Family
ID=11694383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62008484A Expired - Lifetime JPH07118389B2 (en) | 1987-01-16 | 1987-01-16 | Thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118389B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196465A (en) * | 1989-01-26 | 1990-08-03 | Hitachi Ltd | Integrated optical element |
-
1987
- 1987-01-16 JP JP62008484A patent/JPH07118389B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63175379A (en) | 1988-07-19 |
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