JPH07118293B2 - Microchannel plate detector protector - Google Patents
Microchannel plate detector protectorInfo
- Publication number
- JPH07118293B2 JPH07118293B2 JP62089876A JP8987687A JPH07118293B2 JP H07118293 B2 JPH07118293 B2 JP H07118293B2 JP 62089876 A JP62089876 A JP 62089876A JP 8987687 A JP8987687 A JP 8987687A JP H07118293 B2 JPH07118293 B2 JP H07118293B2
- Authority
- JP
- Japan
- Prior art keywords
- bypass element
- secondary electron
- plate detector
- high voltage
- dielectric breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
Landscapes
- Electron Tubes For Measurement (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、二次電子増倍機能を有するマイクロチャンネ
ルプレート検出器の保護装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a protective device for a microchannel plate detector having a secondary electron multiplication function.
（従来の技術） マイクロチャンネルプレート検出器は、中性粒子質量・
エネルギー分析器に用いられる。この中性粒子質量・エ
ネルギー分析器は、第４図のように構成されている。(Prior Art) Microchannel plate detector
Used in energy analyzers. This neutral particle mass / energy analyzer is configured as shown in FIG.
すなわち、10は、分析器本体であり、この本体10内に
は、本体内を真空室とする真空ポンプ11、矢印Ｐから入
射した中性粒子をガスで荷電交換をしイオン化するスト
リッピングセル12、このセル12から放出されるイオンの
エネルギー及び質量の違いをイオンの軌道の違いに比例
させる質量・エネルギー分析部13及び入射したイオンを
電子増倍するマイクロチャンネルプレート検出器14（以
下、MPC検出器14と称する）が収納されている。That is, 10 is a main body of the analyzer, and in the main body 10, a vacuum pump 11 having a vacuum chamber in the main body, and a stripping cell 12 for ionizing the neutral particles incident from the arrow P by gas charge exchange. , A mass / energy analyzer 13 that makes the difference in the energy and mass of the ions emitted from the cell 12 proportional to the difference in the trajectories of the ions, and a microchannel plate detector 14 that performs electron multiplication of the incident ions (hereinafter, MPC detection (Referred to as a container 14) is stored.
このMPC検出器14は、高圧電源15に夫々接続された対向
面A,B間に、内面に二次電子放出材料をコーティングし
た10〜15μｍ程度の径少の硝子管Ｃを多数束ねて配置
し、厚さ0.5〜１μｍ程度の平板状に形成した二次電子
増倍部16及びこの二次電子増倍部16で増倍された二次電
子を検出し出力端子18から外部へ出力するためのコレク
タ17を有している。このように、構成されたMPC検出器1
4は、前記分析部13からその質量・エネルギーに応じて
軌道変更されたイオンを捕捉すべく、前記本体10内に多
数配置されている。The MPC detector 14 has a large number of glass tubes C each having a diameter of about 10 to 15 μm and having inner surfaces coated with a secondary electron emission material, which are arranged between the facing surfaces A and B, which are connected to a high-voltage power supply 15, respectively. , A secondary electron multiplying section 16 formed in a flat plate shape with a thickness of about 0.5 to 1 μm, and a secondary electron multiplied by the secondary electron multiplying section 16 are detected and output from an output terminal 18 to the outside. It has a collector 17. MPC detector 1 configured in this way
A large number of 4 are arranged in the main body 10 so as to capture the ions whose orbits are changed according to the mass / energy of the analyzer 13.
（発明が解決しようとする問題点） しかしながら、このような中性粒子質量・エネルギー分
析器においては、荷電交換用のストリッピングセルにガ
スが使用されているため、真空度が悪化する可能性があ
る。特に、前記MPC検出器14の二次電子増倍部16の付近
の真空度が悪化すると、対向面A,B間で沿面放電が発生
し、絶縁抵抗が低下し、二次電子増倍機能が失われてし
まう。(Problems to be Solved by the Invention) However, in such a neutral particle mass / energy analyzer, since gas is used in the stripping cell for charge exchange, the degree of vacuum may deteriorate. is there. In particular, when the degree of vacuum in the vicinity of the secondary electron multiplying section 16 of the MPC detector 14 deteriorates, creeping discharge occurs between the facing surfaces A and B, the insulation resistance decreases, and the secondary electron multiplying function is Will be lost.
本発明は、上記点に鑑みてなされたもので、二次電子増
倍部の対向面間の沿面放電による絶縁破壊を防止する保
護機能を有するMPC検出器を提供することを目的とす
る。The present invention has been made in view of the above points, and an object of the present invention is to provide an MPC detector having a protective function of preventing dielectric breakdown due to creeping discharge between opposing surfaces of a secondary electron multiplying section.
［発明の構成］ （問題点を解決するための手段） 本発明は、高電圧が印加された二次電子増倍部の入射窓
に入射した粒子を電気的に増幅するマイクロチャンネル
プレート検出器を保護するための保護装置において、前
記二次電子増倍部の絶縁破壊条件より低い絶縁破壊条件
に設定されたバイパス素子と、前記バイパス素子の前記
対向電極間の距離を調整する電極間隔調整機構とを備え
た構成となっている。前記バイパス素子は、前記マイク
ロチャンネルプレート検出器と一緒に前記真空容器内に
配置され、前記二次電子増倍部に高電圧を印加する高圧
電源に接続された互いに離間して配置された対向電極を
有する。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a microchannel plate detector for electrically amplifying particles that have entered the entrance window of the secondary electron multiplier section to which a high voltage is applied. In a protection device for protection, a bypass element set to a dielectric breakdown condition lower than a dielectric breakdown condition of the secondary electron multiplying section, and an electrode gap adjusting mechanism for adjusting a distance between the counter electrodes of the bypass element. It is configured with. The bypass element is arranged in the vacuum container together with the microchannel plate detector, and is a counter electrode which is connected to a high voltage power source for applying a high voltage to the secondary electron multiplying section and is arranged apart from each other. Have.
（作用） 従って、以上のような手段を講じたことにより、真空容
器内の真空度がバイパス素子の絶縁破壊条件よりも下が
ると、マイクロチャンネルプレート検出器に絶縁破壊が
発生する以前にバイパス素子に絶縁破壊が生じてバイパ
ス素子の対向電極間が導通し高圧電源が短絡される。そ
の結果、マイクロチャンネルプレート検出器が絶縁破壊
条件に達する前に高圧電源からマイクロチャンネルプレ
ート検出器に高電圧が印加されなくなる。(Operation) Therefore, if the vacuum degree in the vacuum container falls below the dielectric breakdown condition of the bypass element due to the above-described measures, the bypass element is protected before the dielectric breakdown occurs in the microchannel plate detector. Dielectric breakdown occurs and the opposing electrodes of the bypass element are electrically connected, and the high voltage power supply is short-circuited. As a result, no high voltage is applied to the microchannel plate detector from the high voltage power supply before the microchannel plate detector reaches the dielectric breakdown condition.
また、バイパス素子の対向電極間の距離は電極間隔調整
機構により自在に調整可能である。バイパス素子の絶縁
破壊条件は対向電極間の距離により変化するので電極間
隔調整機構によりバイパス素子の絶縁破壊条件を自在に
調整できることになる。従って、真空容器の真空度が低
下しても、マイクロチャンネルプレート検出器を保護し
得る真空度で、バイパス素子の対向電極間で確実に放電
を起こさせることができる。Further, the distance between the opposing electrodes of the bypass element can be freely adjusted by the electrode gap adjusting mechanism. Since the dielectric breakdown condition of the bypass element changes depending on the distance between the counter electrodes, the dielectric breakdown condition of the bypass element can be freely adjusted by the electrode gap adjusting mechanism. Therefore, even if the vacuum degree of the vacuum container is lowered, it is possible to surely cause the discharge between the opposed electrodes of the bypass element with the vacuum degree that can protect the microchannel plate detector.
（実施例） 以下、本発明の一実施例の構成及び作用につき、第１図
及び第２図を参照して説明する。なお、第４図と同一部
分には同一符号を付し、その詳細な説明は省略する。(Embodiment) The configuration and operation of one embodiment of the present invention will be described below with reference to FIGS. 1 and 2. The same parts as those in FIG. 4 are designated by the same reference numerals, and detailed description thereof will be omitted.
すなわち、本発明はMPC検出器14の対向面A,B夫々に接続
された一対の対向電極21,22を、対向面A,B間の絶縁耐力
より低くなるように配置して構成したバイパス素子20を
設けたことを特徴とするものである。That is, the present invention is a bypass element constituted by arranging a pair of counter electrodes 21 and 22 connected to the facing surfaces A and B of the MPC detector 14, respectively, so as to be lower than the dielectric strength between the facing surfaces A and B. It is characterized by the provision of 20.
このようにMPC検出器14の対向面A,Bに絶縁耐力の低いバ
イパス素子20を並列に接続することにより、MPC検出器1
4の二次電子増倍部16付近の真空度が悪化した場合、対
向面A,Bの絶縁破壊は防止される。In this way, by connecting the bypass element 20 having low dielectric strength in parallel to the facing surfaces A and B of the MPC detector 14, the MPC detector 1
When the degree of vacuum in the vicinity of the secondary electron multiplying unit 16 of 4 deteriorates, the dielectric breakdown of the facing surfaces A and B is prevented.
すなわち、分析器本体10内の真空度が低下すると、二次
電子増倍部16の対向面A,B間で沿面放電が生じる以前に
バイパス素子20が絶縁破壊を起し、高圧電極15,15から
印加される対向面A,Bの高電圧を短絡するので、対向面
A,B間には高電圧が印加されてなくなる。That is, when the degree of vacuum in the analyzer body 10 decreases, the bypass element 20 causes a dielectric breakdown before the creeping discharge occurs between the facing surfaces A and B of the secondary electron multiplying unit 16, and the high voltage electrodes 15 and 15 are generated. Since the high voltage of the facing surfaces A and B applied from the
High voltage is not applied between A and B, and disappears.
この状態は第２図に示すように、まず、バイパス素子20
の沿面放電により、対向面A,B間の印加電圧がt1からt2
へと減少し始める。そして、バイパス素子20が絶縁破壊
されると（第２図t2時）、過電流が流れ、高圧電源15,1
5のフューズが切断され、印加電圧はさらに低下する。
したがって、前記対向面A,B間で絶縁破壊が生じること
はなくなる。In this state, as shown in FIG.
Due to the creeping discharge of, the applied voltage between the facing surfaces A and B changes from t 1 to t 2
Begins to decrease. When the bypass element 20 is broken down (at t2 in Fig. 2 ), an overcurrent flows and the high voltage power supply 15,1
The fuse of 5 is blown, and the applied voltage is further reduced.
Therefore, no dielectric breakdown occurs between the facing surfaces A and B.
バイパス素子20としては、第３図に示す構成のものを用
いることができる。このバイパス素子20は、先端部が半
球状に形成された一対の球状電極72a,72bをその互いの
先端部が任意の距離だけ離間するようにして断面Ｕ字形
の絶縁物70の対向側壁にそれぞれ取り付けている。一方
の球状電極72bは、絶縁物70に対して球状電極72aとの対
向方向である図面中水平方向へ移動自在に保持されてい
る。この球状電極72bの他端部が外部調整ネジ71の先端
に連結されている。外部調整ネジ71を回転させることに
より当該外部調整ネジ71を水平方向へ進退させることが
でき、外部調整ネジ71に連結されている球状電極72bを
他方の球状電極72aに対して近付け又は遠ざけることが
できる。As the bypass element 20, the one having the configuration shown in FIG. 3 can be used. This bypass element 20 has a pair of spherical electrodes 72a, 72b each having a hemispherical tip portion, and the tip portions of the pair of spherical electrodes 72a, 72b are separated from each other by an arbitrary distance on opposite side walls of an insulator 70 having a U-shaped cross section. It is attached. One spherical electrode 72b is held movably in the horizontal direction in the drawing, which is the direction facing the spherical electrode 72a with respect to the insulator 70. The other end of the spherical electrode 72b is connected to the tip of the external adjusting screw 71. By rotating the external adjusting screw 71, the external adjusting screw 71 can be moved back and forth in the horizontal direction, and the spherical electrode 72b connected to the external adjusting screw 71 can be moved closer to or farther from the other spherical electrode 72a. it can.
バイパス素子20の絶縁耐圧を低くするためには、球状電
極72a,72b間の距離を狭くする。In order to reduce the withstand voltage of the bypass element 20, the distance between the spherical electrodes 72a, 72b is narrowed.
このように本実施例によれば、バイパス素子20の球状電
極72a,72b間の距離を調整する外部調整ネジ71を設けた
ので、バイパス素子20の絶縁耐圧を調整でき、MPC検出
器14が絶縁破壊する前に確実にバイパス素子20を絶縁破
壊させて高圧電源15を短絡することができ、MPC検出器1
4を保護できる。As described above, according to the present embodiment, since the external adjusting screw 71 for adjusting the distance between the spherical electrodes 72a, 72b of the bypass element 20 is provided, the withstand voltage of the bypass element 20 can be adjusted and the MPC detector 14 can be isolated. Before the destruction, the bypass element 20 can be surely destroyed and the high-voltage power supply 15 can be short-circuited.
Can protect 4.
［発明の効果］ 本発明は、このように二次電子増倍部の対向面A,B間の
絶縁耐圧より低いバイパス素子を接続して構成したの
で、二次電子増倍部付近の真空度が低下した際に、前記
対向面A,B間が絶縁破壊する以前にバイパス素子が絶縁
破壊し、対向面A,B間に印加される電圧を短絡し、対向
面A,B間に高電圧が印加されることを防止している。[Effects of the Invention] Since the present invention is configured by connecting a bypass element having a lower withstand voltage than the opposing surfaces A and B of the secondary electron multiplying section as described above, the degree of vacuum near the secondary electron multiplying section is When the voltage drops, the bypass element breaks down before the dielectric breakdown between the facing surfaces A and B, shorting the voltage applied between the facing surfaces A and B, and Is prevented from being applied.
また、本発明はバイパス素子に設けた対向電極の間隔を
調整する調整機構を設けたので、バイパス素子の絶縁破
壊条件を自在に調整でき、真空容器の真空度が低下して
もマイクロチャンネルプレート検出器を保護し得る真空
度でバイパス素子の対向電極間で確実に放電を起こさせ
ることができる。Further, since the present invention is provided with the adjusting mechanism for adjusting the interval between the counter electrodes provided in the bypass element, the dielectric breakdown condition of the bypass element can be freely adjusted, and the micro channel plate detection can be performed even if the vacuum degree of the vacuum container is lowered. With the degree of vacuum that can protect the container, it is possible to reliably cause discharge between the opposing electrodes of the bypass element.
従って、二次電子増倍部の対向面A,B間が絶縁破壊され
て二次電子増倍機能が失するのを確実に防止することが
できる。Therefore, it is possible to reliably prevent the secondary electron multiplying portion from having a dielectric breakdown between the facing surfaces A and B and losing the secondary electron multiplying function.
第１図は本発明の一実施例を説明するための図で、第１
図は本発明のMPC検出器を用いて中性粒子質量・エネル
ギー分析器を示す概略構成図、第２図は二次電子増倍部
の対向面間に印加される電圧の状況を示す図、第３図は
バイパス素子及び調整機構の構成図、第４図は従来の中
性粒子質量・エネルギー分析器の構成図である。 10……分析器本体、11……真空ポンプ、13……質量・エ
ネルギー分析部、A,B……対向面、Ｃ……硝子細管、14
……MPC検出器、15……高圧電源、16……二次電子増倍
部、20……バイパス素子、21,22……電極、70……絶縁
物、71……外部調整ネジ、72a,72b……対向電極。FIG. 1 is a diagram for explaining an embodiment of the present invention.
FIG. 2 is a schematic configuration diagram showing a neutral particle mass / energy analyzer using the MPC detector of the present invention, and FIG. 2 is a diagram showing a state of voltage applied between facing surfaces of a secondary electron multiplying unit, FIG. 3 is a block diagram of a bypass element and an adjusting mechanism, and FIG. 4 is a block diagram of a conventional neutral particle mass / energy analyzer. 10 …… Analyzer body, 11 …… Vacuum pump, 13 …… Mass / energy analysis section, A, B …… Opposed surface, C …… Glass capillary tube, 14
...... MPC detector, 15 ...... High voltage power supply, 16 …… Secondary electron multiplier, 20 …… Bypass element, 21,22 …… Electrode, 70 …… Insulator, 71 …… External adjustment screw, 72a, 72b …… Counter electrode.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭56−153653（ＪＰ，Ａ) 特開 昭54−109751（ＪＰ，Ａ) 実開 昭59−66178（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-56-153653 (JP, A) JP-A-54-109751 (JP, A) Practical application Sho-59-66178 (JP, U)
Claims (1)
加された二次電子増倍部の入射窓に入射した粒子を電気
的に増幅するマイクロチャンネルプレート検出器を保護
するための保護装置において、 前記マイクロチャンネルプレート検出器と一緒に前記真
空容器内に配置され、前記二次電子増倍部に高電圧を印
加する高圧電源に接続され互いに離間して配置された対
向電極を有し、前記二次電子増倍部の絶縁破壊条件より
低い絶縁破壊条件に設定されたバイパス素子と、 前記バイパス素子の前記対向電極間の距離を調整する電
極間隔調整機構とを具備したことを特徴とするマイクロ
チャンネルプレート検出器の保護装置。1. A protection device for protecting a microchannel plate detector for electrically amplifying particles incident on an incident window of a secondary electron multiplying section to which a high voltage is applied and which is arranged in a vacuum container. In, in the vacuum container together with the micro-channel plate detector, has a counter electrode connected to a high voltage power source for applying a high voltage to the secondary electron multiplying section and spaced apart from each other, It is characterized by comprising a bypass element set to a dielectric breakdown condition lower than a dielectric breakdown condition of the secondary electron multiplying section, and an electrode gap adjusting mechanism for adjusting a distance between the counter electrodes of the bypass element. Micro channel plate detector protection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62089876A JPH07118293B2 (en) | 1987-04-14 | 1987-04-14 | Microchannel plate detector protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62089876A JPH07118293B2 (en) | 1987-04-14 | 1987-04-14 | Microchannel plate detector protector |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP477295A Division JP2656457B2 (en) | 1995-01-17 | 1995-01-17 | Protector for microchannel plate detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63257176A JPS63257176A (en) | 1988-10-25 |
| JPH07118293B2 true JPH07118293B2 (en) | 1995-12-18 |
Family
ID=13982967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62089876A Expired - Fee Related JPH07118293B2 (en) | 1987-04-14 | 1987-04-14 | Microchannel plate detector protector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118293B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109751A (en) * | 1978-02-16 | 1979-08-28 | Taiyo Yuden Kk | Method of fabricating gap for discharge of braun tube socket |
| JPS56153653A (en) * | 1980-04-30 | 1981-11-27 | Matsushita Electronics Corp | Cathode-ray tube device |
| JPS5966178U (en) * | 1982-10-27 | 1984-05-02 | 株式会社東芝 | Radiation measurement device |
-
1987
- 1987-04-14 JP JP62089876A patent/JPH07118293B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63257176A (en) | 1988-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |