JPH07118270B2 - Carbon nanotube transistor - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transistor used in electronic circuits and the like.

[0002]

2. Description of the Related Art FIG. 2 is a diagram schematically showing a general triode vacuum tube. In a triode vacuum tube, a voltage is applied between the cathode 21 and the anode 22 to cause the cathode 21 to emit electrons and
Receive at. At this time, when a positive voltage is applied to the grid 23, the number of electrons that are captured by the grid and reach the anode 22 is reduced. By thus controlling the voltage of the grid 23, the current between the cathode 21 and the anode 22 can be controlled, and a transistor can be formed. Further, this transistor is enclosed in a glass tube 24 in order to keep the electron travel path vacuum.

[0003]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The extreme vacuum tube has a drawback that it is large in size as compared with a semiconductor transistor. This causes inconveniences such as a long transit time of electrons from the cathode 21 to the anode 22 and a need for high applied voltage, resulting in slow operation and high power consumption. It was also unsuitable for integration.

An object of the present invention is to overcome the drawbacks of the conventional triode vacuum tube and to provide an ultra-compact and ultra-high performance transistor using a carbon nanotube having a performance superior to that of a semiconductor transistor.

[0005]

According to the present invention, a source / drain electrode is provided on both ends of a carbon nanotube serving as a gate electrode via an insulator, and a voltage is applied between the source electrode and the drain electrode to form a source. It is a carbon nanotube transistor characterized in that electrons are emitted from an electrode toward a drain electrode, and the number of electrons reaching the drain is controlled by a gate voltage applied to the carbon nanotube. It is preferable that the portion of the source electrode from which electrons are emitted is exposed without providing an insulator to facilitate the emission of electrons.

[0006]

[Function] Carbon nanotube is "solid state physics" No. 27
Vol. 6, No. 6, page 441 (1992), it is a cylindrical ultrafine tube of nanometer-sized graphite, which is a conductor having the properties of metal or semiconductor. The diameter of a carbon nanotube (hereinafter abbreviated as a nanotube) is 2 to 5
It is as small as 0 nm. Moreover, the cylindrical wall is made of a 6-membered ring of carbon and cannot pass gases such as oxygen and nitrogen. Therefore, if the inside of the nanotube is in vacuum at the time of manufacture, it is kept in vacuum thereafter.

If a vacuum tube type transistor is constructed with the inside of the nanotube as a path for electrons, by applying a positive voltage to the nanotube, electrons can be attracted to the nanotube wall and the current can be modulated. Since this nanotube vacuum tube transistor is extremely small, reflecting the size of the nanotube, the current can be modulated by applying an extremely low voltage. In addition, the distance traveled by electrons can be shortened, and a transistor with ultra-high speed and extremely low power consumption can be realized.

[0008]

FIG. 1 is a diagram for explaining an embodiment of the present invention. An embodiment of the present invention will be described below with reference to FIG.

A source electrode 11 made of copper and a drain electrode 12 made of copper are connected by a nanotube 14 via an insulator 13 made of aluminum oxide. The nanotube becomes the gate electrode 14. Between source electrode 11 and drain electrode 12 and nanotube 1
A voltage is independently applied to each of the four gate electrodes. The nanotube gate electrode 14 and the source electrode 11 and the drain electrode 12 are completely insulated by the insulator 13. The nanotube gate electrode 14 has a diameter of 3
The 0 nm length is 100 nm. The thickness of each insulator 13 is 10 nm.

The cylindrical wall of the nanotube gate electrode 14 is made of a carbon 6-membered ring and cannot pass gases such as oxygen and nitrogen. Therefore, when manufacturing, the nanotube gate electrode 14
If the interior is a vacuum, then the interior is maintained at a near vacuum. (Nanotubes are typically manufactured by arc discharge in a vacuum using a carbon electrode.) The operation of the transistor of FIG. 1 operates as follows. First, when a voltage is applied between the source electrode 11 and the drain electrode 12, electrons are emitted from the surface of the source electrode and are attracted to electrolysis to cause drain electrode 12
Reach At this time, if a positive voltage is applied to the nanotube gate electrode 14, the orbits of the electrons emitted from the source electrode 11 are bent, and some electrons flow toward the nanotube gate electrode 14. Therefore, a transistor operation in which the current applied between the source electrode 11 and the drain electrode 12 is modulated by the voltage applied to the nanotube gate electrode 14 can be obtained.

Generally, to obtain electrolytic electron emission, 10 ⁷ V /
Although an electrolytic strength of about cm is required, the distance between the source electrode 11 and the drain electrode 12 is extremely short at 120 nm, and the tips of the source electrode 11 and the drain electrode 12 are 30
It is possible to operate at a voltage on the order of mV, because it is about nm, which is extremely inferior, and the electrolytic strength is high. Since the ratio of the gate voltage to the source / drain voltage is proportional to the radius of the nanotube gate electrode 14 and the ratio between the source electrode 11 and the drain electrode 12 (1: 8 in this embodiment), the gate voltage is more than the source / drain voltage. It can be further lowered, and high gain can be obtained.

As described above, according to this embodiment,
A transistor that operates at a low voltage and has a high gain can be obtained. The transistor operating at low voltage has a short switching time and consumes less power. In addition, an ultra-small transistor can be constructed by reflecting the dimensions of the nanotube.

Now, a method of manufacturing this transistor will be described. First, nanotubes are deposited on an insulating substrate by arc discharge or the like and transferred to another chamber without breaking the vacuum. Next, an aluminum thin film is deposited to a thickness of several nm by the vacuum evaporation method. Then, it is transferred to another chamber and oxidized in oxygen plasma to form aluminum oxide. When the substrate is further moved to another chamber and anisotropically etched with argon while tilting the substrate largely, aluminum oxide on both ends of the nanotube is removed and both ends of the nanotube can be opened. After that, a copper thin film is formed. This is because a gas (organic metal compound, etc.) containing copper as a constituent element is made to flow over the substrate, and an extremely narrowed electron beam is applied only to the source / drain electrodes at both ends of the nanotube to decompose the gas. Copper thin film patterns can be deposited. In addition to the electron beam irradiation, an STM (scanning tunnel) is used to form the electrode pattern.
There is also a method in which a fine needle for a ring microscope is aligned with a portion where an electrode is to be formed, the above gas is caused to flow, and an electric current is passed between the gas and the substrate to decompose the gas.

[0014]

As described above, according to the present invention, by using the nanotube, it is possible to provide an extremely small-sized transistor capable of operating at a low voltage. Such a transistor is a very excellent transistor because of its high switching speed and low power consumption.

[Brief description of drawings]

FIG. 1 is a schematic view of a transistor using a carbon nanotube for explaining an example of the present invention.

FIG. 2 is a schematic view of a triode vacuum tube for explaining a conventional technique.

[Explanation of symbols]

 11 Source Electrode 12 Drain Electrode 13 Insulator 14 Carbon Nanotube Gate Electrode 21 Cathode 22 Anode 23 Grid 24 Glass Tube

Claims (2)

[Claims] 1. A source / drain electrode is provided on both ends of a carbon nanotube serving as a gate electrode via an insulator, and a voltage is applied between the source electrode and the drain electrode to direct electrons from the source electrode toward the drain electrode. A carbon nanotube transistor characterized in that the number of electrons that are emitted and are controlled by the gate voltage applied to the carbon nanotubes reach the drain. 2. The carbon nanotube transistor according to claim 1, wherein an insulator is not provided in a portion of the source electrode where electrons are emitted.