AU2001236763A1 - System and method for fabricating logic devices comprising carbon nanotube transistors - Google Patents

System and method for fabricating logic devices comprising carbon nanotube transistors

Info

Publication number
AU2001236763A1
AU2001236763A1 AU2001236763A AU3676301A AU2001236763A1 AU 2001236763 A1 AU2001236763 A1 AU 2001236763A1 AU 2001236763 A AU2001236763 A AU 2001236763A AU 3676301 A AU3676301 A AU 3676301A AU 2001236763 A1 AU2001236763 A1 AU 2001236763A1
Authority
AU
Australia
Prior art keywords
carbon nanotube
logic devices
nanotube transistors
fabricating logic
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001236763A
Inventor
Vladimir Mancevski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidex Corp
Original Assignee
Xidex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidex Corp filed Critical Xidex Corp
Publication of AU2001236763A1 publication Critical patent/AU2001236763A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
AU2001236763A 2000-02-07 2001-02-07 System and method for fabricating logic devices comprising carbon nanotube transistors Abandoned AU2001236763A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18059500P 2000-02-07 2000-02-07
US60180595 2000-02-07
PCT/US2001/004046 WO2001057917A2 (en) 2000-02-07 2001-02-07 System and method for fabricating logic devices comprising carbon nanotube transistors

Publications (1)

Publication Number Publication Date
AU2001236763A1 true AU2001236763A1 (en) 2001-08-14

Family

ID=22661034

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001236763A Abandoned AU2001236763A1 (en) 2000-02-07 2001-02-07 System and method for fabricating logic devices comprising carbon nanotube transistors

Country Status (3)

Country Link
US (1) US20080179590A1 (en)
AU (1) AU2001236763A1 (en)
WO (1) WO2001057917A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002017397A1 (en) * 2000-08-24 2002-02-28 Infineon Technologies Ag Electronic element, method for producing an element of this type and a semiconductor element
DE10118405A1 (en) * 2001-04-12 2002-10-24 Infineon Technologies Ag Heterostructure component used in electronic devices comprises a single hetero-nanotube having regions made from nanotube materials having different energy band gaps value
GB0116943D0 (en) 2001-07-11 2001-09-05 Isis Innovation Information register
US6596187B2 (en) * 2001-08-29 2003-07-22 Motorola, Inc. Method of forming a nano-supported sponge catalyst on a substrate for nanotube growth
US6887450B2 (en) 2002-01-02 2005-05-03 Zyvex Corporation Directional assembly of carbon nanotube strings
DE10250834A1 (en) * 2002-10-31 2004-05-19 Infineon Technologies Ag Memory cell, memory cell arrangement, structuring arrangement and method for producing a memory cell
DE10250830B4 (en) * 2002-10-31 2015-02-26 Qimonda Ag Method for producing a circuit array
DE10250868B8 (en) * 2002-10-31 2008-06-26 Qimonda Ag Vertically integrated field effect transistor, field effect transistor arrangement and method for producing a vertically integrated field effect transistor
CN100459181C (en) * 2002-11-05 2009-02-04 皇家飞利浦电子股份有限公司 Nanostructure, electronic device having such nanostructure and method of preparing nanostructure
DE10335813B4 (en) * 2003-08-05 2009-02-12 Infineon Technologies Ag IC chip with nanowires
DE10359424B4 (en) 2003-12-17 2007-08-02 Infineon Technologies Ag Redistribution board for narrow pitch semiconductor devices and method of making the same
DE102004003374A1 (en) 2004-01-22 2005-08-25 Infineon Technologies Ag Semiconductor circuit breaker as well as a suitable manufacturing process
DE102004049453A1 (en) * 2004-10-11 2006-04-20 Infineon Technologies Ag Nanostructure electrical circuit and method of making a nanostructure contacting
TWI420628B (en) * 2005-03-28 2013-12-21 Carbon nanotube bond pad structure and method therefor
EP1804286A1 (en) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Elongate nanostructure semiconductor device
US8378333B2 (en) * 2007-09-27 2013-02-19 University Of Maryland Lateral two-terminal nanotube devices and method for their formation
DE102008044985B4 (en) * 2008-08-29 2010-08-12 Advanced Micro Devices, Inc., Sunnyvale A method of making a semiconductor device having a carbonaceous conductive material for via contacts
US9851378B2 (en) * 2008-09-29 2017-12-26 Wentworth Laboratories Inc. Methods of fabricating probe cards including nanotubes
US8389387B2 (en) * 2009-01-06 2013-03-05 Brookhaven Science Associates, Llc Segmented nanowires displaying locally controllable properties
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US10032569B2 (en) * 2009-08-26 2018-07-24 University Of Maryland, College Park Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8703523B1 (en) 2010-12-06 2014-04-22 Lawrence Livermore National Security, Llc. Nanoporous carbon tunable resistor/transistor and methods of production thereof
US9166188B1 (en) * 2014-06-10 2015-10-20 Arolltech Co., Ltd. Organic light emitting diode device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118270B2 (en) * 1993-10-25 1995-12-18 日本電気株式会社 Carbon nanotube transistor
KR100277881B1 (en) * 1998-06-16 2001-02-01 김영환 Transistor
EP2239794A3 (en) * 1999-07-02 2011-03-23 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6504292B1 (en) * 1999-07-15 2003-01-07 Agere Systems Inc. Field emitting device comprising metallized nanostructures and method for making the same

Also Published As

Publication number Publication date
US20080179590A1 (en) 2008-07-31
WO2001057917A2 (en) 2001-08-09
WO2001057917A3 (en) 2002-01-03

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