JPH07115943B2 - Ceramic substrate processing method - Google Patents

Ceramic substrate processing method

Info

Publication number
JPH07115943B2
JPH07115943B2 JP62061938A JP6193887A JPH07115943B2 JP H07115943 B2 JPH07115943 B2 JP H07115943B2 JP 62061938 A JP62061938 A JP 62061938A JP 6193887 A JP6193887 A JP 6193887A JP H07115943 B2 JPH07115943 B2 JP H07115943B2
Authority
JP
Japan
Prior art keywords
substrate
substrates
zirconia
sol
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62061938A
Other languages
Japanese (ja)
Other versions
JPS63230583A (en
Inventor
明利 吉田
正道 小櫃
俊樹 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP62061938A priority Critical patent/JPH07115943B2/en
Publication of JPS63230583A publication Critical patent/JPS63230583A/en
Publication of JPH07115943B2 publication Critical patent/JPH07115943B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Electronic Switches (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はセラミツクス基板の処理法に関する。更に詳し
く述べれば、セラミツクス基板を粒子径が500mμを越え
ないジルコニアゾルで処理し、その基板を2枚以上に重
ね合わせ熱処理することにより、基板に平滑性を付与し
或いは基板の平滑性を維持し、同時に基板同志くっつく
ことなくソリを低減させることを特徴とするセラミツク
ス基板の処理法に関する。
TECHNICAL FIELD The present invention relates to a method for processing a ceramic substrate. More specifically, the ceramics substrate is treated with a zirconia sol having a particle size not exceeding 500 mμ, and two or more substrates are superposed and heat-treated to impart smoothness to the substrate or maintain the smoothness of the substrate. At the same time, the present invention relates to a method for treating a ceramics substrate, which is characterized by reducing warpage without sticking to each other.

(従来の技術) 電子材料、絶縁材料、焼成用棚板材料、その他多くの材
料に、アルミナ、ムライト、シリカ、シャモット、コー
ジライト、ジルコニア、その他数多くの金属酸化物系化
合物から成るセラミックス基板、或いは窒化珪素、窒化
アルミ、炭化珪素、窒化硼素その他の非酸化系化合物か
らなるセラミツクス基板の製造に於いて、一般に出来上
がった基板のソリをなおすためジルコニア粉末からなる
微粉末を基板と基板の間に薄くしき、数十枚を重ね合わ
せ上よりおもりをのせ、再度1000℃以上で熱処理してい
た。その結果、敷粉が基板へくい込んだり基板に凹部を
つくり、基板のソリはなおるが、平滑性を損なう場合が
多かった。その為、平滑性を強調する基板は数枚又は1
枚毎にセッター平面に於いて焼いてソリをなおさなけれ
ばならないと云う問題があった。また高温で熱処理を必
要としても基板同志がくっつく為、敷粉をしいて熱処理
すると平滑性がそこなわれる問題があった。
(Prior Art) Electronic materials, insulating materials, baking shelf board materials, and many other materials such as alumina, mullite, silica, chamotte, cordierite, zirconia, and other ceramic substrates made of many metal oxide compounds, or In the manufacture of ceramics substrates made of silicon nitride, aluminum nitride, silicon carbide, boron nitride and other non-oxidizing compounds, generally fine powder of zirconia powder is thinly applied between the substrates to correct the warpage of the finished substrate. However, several dozen sheets were piled on top of each other and a weight was placed on top, and heat treatment was performed again at 1000 ° C or higher. As a result, the spread powder bites into the substrate or forms recesses in the substrate, and the warpage of the substrate is repaired, but the smoothness is often impaired. Therefore, the number of substrates that emphasize smoothness is one or several.
There was a problem that each set had to be baked on the plane of the setter to repair the sled. In addition, even if heat treatment is required at a high temperature, the substrates stick to each other. Therefore, there is a problem that smoothness is impaired when heat treatment is performed by spreading powder.

(発明が解決しようとする問題点) 基板のソリをなおすために、基板を2枚以上重ね合わせ
て焼成してもくっつく事なく、且つ平滑性を損なわずに
基板を一度に多く処理できる方法を提供する事を目的と
する。
(Problems to be Solved by the Invention) A method capable of treating a large number of substrates at a time without sticking even if two or more substrates are stacked and fired to correct the warp of the substrates and the smoothness is not impaired. The purpose is to provide.

(問題点を解決するための手段) 即ち、本発明はセラミツクス基板を2枚以上に重ね合わ
せ熱処理して、セラミツクス基板のソリをなおす方法に
おいて、セラミツクス基板を粒子径が500mμを越えない
ジルコニアゾルで処理することを特徴とするセラミツク
ス基板の処理法に関する。
(Means for Solving the Problems) That is, according to the present invention, a ceramic substrate is made of a zirconia sol having a particle diameter of not more than 500 mμ in a method in which two or more ceramic substrates are heat-treated and the warp of the ceramic substrate is corrected. The present invention relates to a method of processing a ceramic substrate, which is characterized by processing.

本発明に使用しするジルコニアゾルは水及び/又は有機
溶媒を分散媒とするゾルであり、公知の方法で得られた
ものが使用出来る。有機溶媒としてはとくに限定されな
いが、メタノール、エタノール、イソプロパノール、ブ
タノール、エチレングリコール、グリセリン等のアルコ
ール類、多価アルコール類、トルエン、MEK、ヘキサン
等の溶媒、その他セルソルブ等多数の溶媒が使用でき
る。ジルコニアゾルの粒子の大きさは500mμを越えない
ものが使用でき、好ましくは10〜300mμのものである。
この粒子系は独立粒子の大きさで示すもの以外に20mμ
以下の単一粒子が数十個以上凝集した凝集粒子系で5〜
500mμの大きさのものが使用出来る。特に好ましい粒径
は10〜200mμの粒系を有するジルコニアゾルである。
The zirconia sol used in the present invention is a sol having water and / or an organic solvent as a dispersion medium, and those obtained by a known method can be used. The organic solvent is not particularly limited, but alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol and glycerin, polyhydric alcohols, solvents such as toluene, MEK and hexane, and many other solvents such as cellosolve can be used. Zirconia sol particles having a size not exceeding 500 mμ can be used, and preferably 10 to 300 mμ.
This particle system is 20mμ in addition to those shown by the size of independent particles.
In the agglomerated particle system where the following single particles are agglomerated by several dozen or more,
The size of 500mμ can be used. A particularly preferred particle size is zirconia sol having a particle size of 10 to 200 mμ.

本発明で使用するセラミツクス基板はアルミナムライ
ト、シリカ、シャモット、コージライト、ジルコニア、
スピネルその他数多くの金属酸化物から成り、又、窒化
珪素、窒化アルミ、炭化珪素窒化硼素、その他非酸化系
化合物から成るものに適応できる。これらセラミツクス
基板は一般にドクターブレート法、プレス法等の常法に
おいて製造したものであるが他の方法、例えば射出、押
出し泥漿鋳込みによる製法で得られたものも使用でき
る。又、種類の異なる2種以上の基板を2枚以上に積み
重ねても構わない。本発明に利用できるジルコニアゾル
の基板への処理法は含浸引き上げ法、噴霧法が好んで使
用出来、バーコート法、その他の処理法も使用出来る。
以上のようにして基板処理した後、常温又は加熱乾燥を
経て熱処理を行いジルコニアゾルをジルコニア固体粒子
として表面に分散及び基板化合物との反応をすることに
より凹部に埋まり平滑性を向上するとともに、基板表面
はジルコニア質あるいはジルコニア質を多く含む平滑被
膜を形成する為、極めて耐熱性の高いものとなる。1800
℃以下では殆ど基板同志が積み重ねて焼成してもくっつ
き合うことなく離型性の良い平滑被膜を与える。このジ
ルコニアの乾燥被膜は0.1〜150μであり、特に0.1〜80
μが好ましい。
The ceramic substrate used in the present invention is aluminalite, silica, chamotte, cordierite, zirconia,
It is applicable to spinel and many other metal oxides, and to silicon nitride, aluminum nitride, silicon carbide boron nitride, and other non-oxidizing compounds. These ceramic substrates are generally manufactured by a conventional method such as a doctor blade method or a pressing method, but those obtained by other methods, for example, a method such as injection or extrusion slurry casting can also be used. Further, two or more types of substrates of different types may be stacked in two or more. As the method of treating the substrate with the zirconia sol that can be used in the present invention, the impregnation and lifting method and the spraying method can be preferably used, and the bar coating method and other processing methods can also be used.
After the substrate treatment as described above, the zirconia sol is dispersed in the surface as solid zirconia particles as a zirconia solid particle and reacted with a substrate compound by performing heat treatment at room temperature or by heating and drying, and the smoothness is improved by filling the concave portion with the substrate, Since the surface forms a zirconia-based material or a smooth coating containing a large amount of zirconia-based material, it has extremely high heat resistance. 1800
At temperatures below ℃, even if the substrates are stacked and fired, they do not stick to each other and give a smooth film with good releasability. The dry coating of this zirconia is 0.1-150μ, especially 0.1-80
μ is preferred.

これら処理基板の熱処理条件はジルコニアゾルを処理す
る基板が例えば生シートの600℃以下の脱脂処理状態
か、600〜1100℃位の仮焼結状態か、1200℃以上の焼成
後の状態かによってそれぞれ異なるが、この熱処理温度
は基板の使用目的により100〜1800℃の任意の温度が採
用できる。好ましい範囲は800〜1600℃である。又この
熱処理の時間も任意に選べるが一般に30分〜10時間であ
るがこれに限定されるものではない。
The heat treatment conditions of these treated substrates depend on whether the substrate for treating the zirconia sol is, for example, a degreasing treatment state of a raw sheet at 600 ° C or less, a pre-sintering state of about 600 to 1100 ° C, or a state after firing at 1200 ° C or more. Although different, the heat treatment temperature may be an arbitrary temperature of 100 to 1800 ° C. depending on the purpose of using the substrate. The preferred range is 800-1600 ° C. The time of this heat treatment can be arbitrarily selected, but is generally 30 minutes to 10 hours, but is not limited to this.

本発明を実施するに当たってジルコニアゾルは数種の添
加剤を目的に応じて併用出来る。浸透性向上には界面活
性剤、低沸点有機溶媒を、平滑性のより向上にはレベリ
ング剤、増粘剤等を、膜の厚さの増加には増粘剤、レベ
リング剤等を併用出来る。
In carrying out the present invention, the zirconia sol may be used in combination with several additives depending on the purpose. A surfactant and a low boiling point organic solvent may be used for improving the permeability, a leveling agent, a thickening agent, etc. may be used for improving the smoothness, and a thickening agent, a leveling agent, etc. may be used for increasing the film thickness.

以下に実施例をもって更に本発明を詳細に説明するが本
発明はこれに限定されるものではない。
Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto.

実施例1及び比較例1 ジルコニアゾルとして粒子系70mμ、ZrO2として5重量
%を含む水を分散媒とするゾルを5用意した。ソリの
残る長方形のアルミナ基板(250m/m×60m/m×0.6m/m)
を前記ゾル中に含浸し、垂直方向に毎分100m/mの速度で
引き上げ、室温乾燥30分後、60℃3時間乾燥した。この
操作をもう一回繰り返した。このようにして作った基板
8枚を積み重ね、上に約300gの重りをおいて、常法に従
い1600℃6時間加熱しソリ修正処理を行い放冷した。放
冷後1枚1枚の剥離は良好でくっつく事なく、又、ソリ
もなくなっていた。平滑性もジルコニアゾル未処理の基
板平滑度Ra0.30μに対し0.15μと平滑性も向上した。
Example 1 and Comparative Example 1 Five sol having 70 mμ of particle system as zirconia sol and 5 wt% of ZrO 2 as water as a dispersion medium were prepared. Rectangular alumina substrate with remaining warp (250 m / m x 60 m / m x 0.6 m / m)
Was impregnated in the sol, pulled up in the vertical direction at a speed of 100 m / m / min, dried at room temperature for 30 minutes, and then dried at 60 ° C. for 3 hours. This operation was repeated once again. Eight substrates thus prepared were stacked, a weight of about 300 g was placed on the substrates, and the substrates were heated at 1600 ° C. for 6 hours according to a conventional method, subjected to warp correction processing, and allowed to cool. After cooling, the peeling of each sheet was good, no sticking, and no warping. The smoothness was improved to 0.15μ compared to the substrate smoothness Ra of 0.30μ which was not treated with zirconia sol.

比較例として、ジルコニアゾル処理を行わない以外は実
施例と同様にソリ修正処理を行ったが基板同志が相互に
くっつくことがあり、この方法は使えず、1枚づつ重ね
合わせず焼成ソリ修正処理をしなければならなかった。
As a comparative example, the warp correction process was performed in the same manner as the example except that the zirconia sol process was not performed, but the substrates may stick to each other, and this method cannot be used. Had to do.

又、基板を重ね合わせてソリを修正する際に、5μ以下
の微粒子のジルコニア粉末を薄く均等に1枚1枚の間に
しき実施例と同様にソリ修正の加熱処理を行った。放冷
後1枚1枚の剥離は良好で、ソリ修正は出来たが、平滑
性はよくなることなくかえって凹部が多くなる事もあっ
た。
In addition, when the warp was corrected by stacking the substrates, a fine zirconia powder having a particle size of 5 μ or less was thinly and evenly interleaved one by one, and the heat treatment for warp correction was performed as in the example. After cooling, the peeling of each sheet was good and the warp could be corrected, but the smoothness was not improved and the recesses were often increased.

実施例2及び比較例2 粒子系150mμ、ZrO2として12重量%を含む水を分散媒と
するゾルを1用意した。正方形のシリカ基板(80m/m
×80m/m×1.5m/m)に前記ゾルをスプレーガンで均一に3
5g/m2の塗布量で塗布し、すぐに80℃で1時間乾燥後、
更に120℃で1時間乾燥した。この基板を25枚積み重ね1
200℃2時間加熱処理を行った。ソリは減少し、基板同
志くっつく事もなかった。比較例としてジルコニアゾル
の塗布処理を行わない以外は実施例と同様に処理を行っ
たが、放冷後1枚1枚の剥離は3枚に1枚の割合で融着
の為かくっついて剥離が困難であった。
Example 2 and Comparative Example 2 One sol having a particle system of 150 mμ and water containing 12% by weight of ZrO 2 as a dispersion medium was prepared. Square silica substrate (80m / m
× 80m / m × 1.5m / m) Evenly spray the above sol with a spray gun.
Apply at a coating amount of 5g / m 2 and immediately dry at 80 ° C for 1 hour.
It was further dried at 120 ° C. for 1 hour. Stack 25 of these boards 1
Heat treatment was performed at 200 ° C. for 2 hours. The sled decreased, and the boards did not stick together. As a comparative example, the same process as in the example was carried out except that the coating process of zirconia sol was not carried out. Was difficult.

又、別つの比較例として本発明法の代わりにZrO2として
12重量%含有の塩基性酢酸ジルコニウムを使用した以外
は実施例と全く同様に熱処理し、1枚1枚剥離した所、
剥離しにくい基板があり、基板表面のコート層にかなり
のむらが目立ち、この方法に採用できるものでは無かっ
た。
Further, as another comparative example, ZrO 2 was used instead of the method of the present invention.
When heat treatment was performed in the same manner as in the example except that 12% by weight of basic zirconium acetate was used, and one sheet was peeled off,
There was a substrate that was difficult to peel off, and considerable unevenness was noticeable in the coating layer on the substrate surface, and this method was not applicable to this method.

実施例3 粒子径8mμ、ZrO2として2重量%を含むメタノールを分
散媒とするオルガノゾルを1用意した。長方形の窒化
珪素基板(60m/m×80m/m×4m/m)を前記ゾル中に含浸
し、垂直方向に毎分100m/mの速度で引き上げ、室温乾燥
1時間後、100℃2時間乾燥した。この操作をもう2回
繰り返した。このようにして作った基板3枚を積み重
ね、上に重りをおいて、常法に従い1500℃3時間加熱し
ソリ修正処理を行い放冷した。放冷後1枚1枚の剥離は
良好でくっつく事なく、ソリもなく、又気孔閉鎖及び平
滑性も良好であった。
Example 3 One organosol having a particle diameter of 8 μm and containing 2% by weight of ZrO 2 as methanol as a dispersion medium was prepared. A rectangular silicon nitride substrate (60 m / m x 80 m / m x 4 m / m) was impregnated into the sol, pulled up vertically at a rate of 100 m / m per minute, dried at room temperature for 1 hour, and then dried at 100 ° C for 2 hours. did. This operation was repeated twice. The three substrates thus prepared were stacked, a weight was placed on the stacked substrates, and the substrates were heated at 1500 ° C. for 3 hours according to a conventional method, warped, and then left to cool. After cooling, the peeling of each sheet was good, there was no sticking, there was no warp, and pore closure and smoothness were also good.

実施例4及び比較例3 ジルコニアゾルとして粒子径25mμ、ZrO2として18重量
%を含む水を分散媒とするゾルを1用意した。これを
常法で作ったアルミナ基板の50×50m/m用生シートの片
面に乾燥後のジルコニアの膜厚が約3μになる様に合計
30枚に噴霧し40℃の空気循環式乾燥器2時間乾燥後30枚
積み重ね、1600℃まで加熱し3時間その温度を保持し放
冷した。このようにして出来上がった焼成基板は一枚一
枚の剥離性は良好でくっつくことが全くなかった。比較
例としてジルコニアゾルを塗布しない以外は全く実施例
4と同様に行った。焼成基板は所々融着現象が起き、剥
離に支障をきたした。
Example 4 and Comparative Example 3 One sol having a particle diameter of 25 mμ as zirconia sol and 18 wt% of ZrO 2 as a dispersion medium of water was prepared. The total thickness of zirconia after drying is about 3μ on one side of a 50 x 50 m / m green sheet of alumina substrate made by a conventional method.
30 sheets were sprayed and dried at 40 ° C. in an air circulation dryer for 2 hours, and then 30 sheets were piled up, heated to 1600 ° C., kept at that temperature for 3 hours and allowed to cool. Each of the fired substrates thus prepared had good peelability and did not stick to each other at all. As a comparative example, the same procedure as in Example 4 was performed except that the zirconia sol was not applied. Fusing phenomenon occurred in some places on the fired substrate, which hindered peeling.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】セラミツクス基板を2枚以上に重ね合わせ
熱処理して、セラミツクス基板のソリをなおす方法にお
いて、セラミツクス基板を粒子径が500mμを越えないジ
ルコニアゾルで処理することを特徴とするセラミツクス
基板の処理法。
1. A method for correcting the warp of a ceramic substrate by superposing two or more ceramic substrates on heat treatment, wherein the ceramic substrate is treated with a zirconia sol having a particle diameter not exceeding 500 mμ. Processing method.
JP62061938A 1987-03-17 1987-03-17 Ceramic substrate processing method Expired - Lifetime JPH07115943B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62061938A JPH07115943B2 (en) 1987-03-17 1987-03-17 Ceramic substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62061938A JPH07115943B2 (en) 1987-03-17 1987-03-17 Ceramic substrate processing method

Publications (2)

Publication Number Publication Date
JPS63230583A JPS63230583A (en) 1988-09-27
JPH07115943B2 true JPH07115943B2 (en) 1995-12-13

Family

ID=13185624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62061938A Expired - Lifetime JPH07115943B2 (en) 1987-03-17 1987-03-17 Ceramic substrate processing method

Country Status (1)

Country Link
JP (1) JPH07115943B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06321645A (en) * 1993-05-10 1994-11-22 Sekisui Plastics Co Ltd Production of barium titanate ceramic semiconductor and fixing liquid for weld preventing agent used therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270267A (en) * 1985-05-23 1986-11-29 株式会社日本触媒 Method of joining ceramic members

Also Published As

Publication number Publication date
JPS63230583A (en) 1988-09-27

Similar Documents

Publication Publication Date Title
JPH07115943B2 (en) Ceramic substrate processing method
JP3369819B2 (en) Manufacturing method of ceramic sintered body
JPS5896508A (en) Manufacture of green ceramic sheet
JPH04154638A (en) Production of thin-film silica glass
JPH06207785A (en) Setter for heating and molding working and manufacture thereof
JPS6389467A (en) Mold release sheet for burning ceramic substrate
JPH07206556A (en) Coating material for refractory and method for application
WO2018047573A1 (en) Heat-resistant masking coating material and thermal spraying method
JP3981425B2 (en) Ceramic material firing jig
JP3001941B2 (en) Manufacturing method of aluminum nitride sintered body
JP4041191B2 (en) Raw material powder for ceramic sheets
JP2737187B2 (en) Processing method of ceramics
JPH0510298B2 (en)
JPS62255786A (en) Holding plate for baking ceramic sheet and method of baking ceramic sheet
JPS6117474A (en) Manufacture of ceramic substrate
JPH082967A (en) Production of aluminum nitride sintered compact
JPH0234566A (en) Aluminum nitride-based powder and production thereof
JP3484872B2 (en) Heat treatment method of ceramics and heat treatment sheath used for it
JP2569876B2 (en) Manufacturing method of ceramics
JPS59107980A (en) Manufacture of thin plate ceramic sintered body
JPH0437651A (en) Production of aluminum nitride substrate
JPH0251444A (en) Adhesive sheet for glass coating and coating method
JPH03223193A (en) Refractory material having stabilized zirconia-coated layer and its production
JPS61158881A (en) Method of correcting aluminum nitride ceramic
JPH03177380A (en) Ceramic-coated member and its production