JPH07115164A - Composite lead frame - Google Patents

Composite lead frame

Info

Publication number
JPH07115164A
JPH07115164A JP28193393A JP28193393A JPH07115164A JP H07115164 A JPH07115164 A JP H07115164A JP 28193393 A JP28193393 A JP 28193393A JP 28193393 A JP28193393 A JP 28193393A JP H07115164 A JPH07115164 A JP H07115164A
Authority
JP
Japan
Prior art keywords
lead
tip
inner lead
lead frame
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28193393A
Other languages
Japanese (ja)
Other versions
JP3013133B2 (en
Inventor
Hirotaka Ueda
弘孝 上田
Tsutomu Araki
力 荒木
Saburo Tanabe
三郎 田辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP28193393A priority Critical patent/JP3013133B2/en
Publication of JPH07115164A publication Critical patent/JPH07115164A/en
Application granted granted Critical
Publication of JP3013133B2 publication Critical patent/JP3013133B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To perform the wire bonding of a lead frame having an extra-large number of pins stably and at a high speed without deforming the inner lead parts to obtain a composite lead frame whose temperature rise in operation is suppressed. CONSTITUTION:The plate thicknesses of the inner leads 1 or the tip parts of the inner leads 1 of a lead frame are smaller than those of the other parts. The tip parts of the inner leads are arranged into zigzag formations and wide parts are provided on the tip parts. A heating plate 12 or an independent pad 2 is fixed to the thin parts of the inner leads with insulating adhesives therebetween to support the inner leads.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は超多ピン半導体装置に好
適なリードフレームに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame suitable for an ultra-multipin semiconductor device.

【0002】[0002]

【従来の技術】半導体装置は、例えば半導体チップ(以
下 チップという)をリードフレームのパッドに搭載
し、チップ端子とインナーリードとを細いワイヤーで溶
接接続し、その後、樹脂やセラミック等で封入し製造さ
れる。
2. Description of the Related Art A semiconductor device is manufactured, for example, by mounting a semiconductor chip (hereinafter referred to as a chip) on a pad of a lead frame, welding and connecting a chip terminal and an inner lead with a thin wire, and then encapsulating with resin or ceramic. To be done.

【0003】半導体装置は周知のように電子機器の中枢
材で、その技術的進歩は目覚ましく、高集積化、小型化
および高速化等を要請されている。
As is well known, the semiconductor device is a core material of electronic equipment, and its technological progress is remarkable, and there is a demand for high integration, miniaturization and high speed.

【0004】半導体装置用リードフレームは例えば16
0ピン以上のものがプレスあるいはエッチングで製造さ
れるようになっている。係る超多ピンではリ−ドのピッ
チおよび幅が狭くなり、なかでもインナーリード先端部
はピッチ、幅とも極めて微細となるからエッチングで製
造されることが多い。
The lead frame for a semiconductor device is, for example, 16
Those with 0 or more pins are manufactured by pressing or etching. In such an ultra-high pin count, the lead pitch and width are narrowed, and the inner lead tips are extremely fine in pitch and width, and are therefore often manufactured by etching.

【0005】半導体装置はその機能を長期にわたって安
定して発揮でき信頼性が高いことを要請されている。一
方、超多ピン化した半導体装置はチップが高密度、高集
積であるから使用時の発熱が多くなる。これを放熱し温
度上昇を抑制しないと前記信頼性を維持することができ
なくなる。温度上昇を防止するのに例えば特開昭62−
84541号公報に記載されているように、チップを搭
載したパッドの下面に放熱板を設けるものがあり、使用
時の温度上昇が抑制される効果がある。
Semiconductor devices are required to be able to exhibit their functions stably over a long period of time and to be highly reliable. On the other hand, a semiconductor device having an ultra-high pin count has a high density and a high degree of chip integration, and therefore generates a large amount of heat during use. The reliability cannot be maintained unless this is radiated to suppress the temperature rise. To prevent the temperature rise, for example, Japanese Patent Laid-Open No. 62-
As described in Japanese Patent No. 84541, there is one in which a heat dissipation plate is provided on the lower surface of a pad on which a chip is mounted, which has an effect of suppressing a temperature rise during use.

【0006】ところで、超多ピンリードフレームはエッ
チングで製造されることが前述のように多いが、エッチ
ングではサイドエッチング現象がありリ−ド幅が狭くな
る。特にインナーリード先端部のリ−ド幅が狭まりワイ
ヤ−ボンディングが難しくなるので、これを避けるよう
に例えば特開平3−283644号公報に記載のように
素材金属板の板厚を部分的に薄くした後、該薄肉部分に
インナーリードあるいはインナーリード先端部を形成す
る所謂ハ−フエッチングにより、サイドエッチング現象
を減らしリ−ド幅の狭小化を防止している。
By the way, although the ultra-multi-pin lead frame is often manufactured by etching, as described above, the etching causes a side etching phenomenon and the lead width becomes narrow. In particular, since the lead width of the tip of the inner lead is narrowed and wire bonding becomes difficult, in order to avoid this, for example, the thickness of the material metal plate is partially thinned as described in JP-A-3-283644. Later, so-called half etching for forming the inner lead or the tip of the inner lead in the thin portion is performed to reduce the side etching phenomenon and prevent the lead width from being narrowed.

【0007】[0007]

【この発明が解決しようとする課題】超多ピンのリード
フレームの製造には前記方法がそれなりの作用効果があ
るが、しかし、インナーリードあるいはインナーリード
先端部は板厚を薄くされ機械的強度が低下し変形し易く
なっている。このため例えばワイヤ−ボンディングの際
に前だれ、あるいはボンディング後に、ワイヤ−を切断
する際、その力がインナーリード先端部に掛かり曲がる
ことがある。
The above-mentioned method has some action and effect in the manufacture of a lead frame having an extremely large number of pins, however, the inner lead or the tip of the inner lead has a reduced plate thickness and has a higher mechanical strength. It deteriorates and is easily deformed. For this reason, for example, when the wire is cut at the front end during wire bonding or after the wire is cut, the force may be applied to the tip of the inner lead and bent.

【0008】また、インナーリードあるいはインナーリ
ード先端部のリ−ド幅は前記ハ−フエッチングにより狭
小化が避けられているものの、例えば200ピン以上の
超多ピンリードフレームではリ−ド幅を70〜80μm
確保することが難しく、ワイヤ−ボンディングを安定し
て高速にて行えるようするには更なる改良が必要であ
る。
Further, although the lead width of the inner lead or the tip of the inner lead is prevented from being narrowed by the half etching, the lead width is 70 in a super multi-pin lead frame having 200 pins or more, for example. ~ 80 μm
It is difficult to secure it, and further improvement is required to make wire bonding stable and at high speed.

【0009】エッチングで薄肉化した部分は板面が荒れ
ていて微小な凹凸を呈している。このためワイヤ−ボン
ディングの際、溶接接続エネルギ−が散乱し接続不良を
起こすことがある。
The portion thinned by etching has a rough plate surface and presents minute irregularities. Therefore, during wire bonding, welding connection energy may be scattered to cause a connection failure.

【0010】本発明は例えば200ピン以上の超多ピン
のリードフレームであっても、インナーリードに広幅域
が確保されワイヤ−ボンディングを安定して確実にで
き、また変形を生ぜず、さらに、使用時の温度上昇を防
止できる複合リードフレームを目的とする。
In the present invention, for example, even in the case of a lead frame having a super-multi-pin of 200 pins or more, a wide area is secured in the inner lead, wire-bonding can be stably and surely made, and no deformation occurs. The purpose of the present invention is to provide a composite lead frame that can prevent the temperature from rising.

【0011】[0011]

【課題を解決するための手段】本発明の要旨は、インナ
ーリードまたはインナーリード先端部の板厚を他の部分
より薄くしたリードフレームにおいて、インナーリード
の先端部を千鳥状に配設するとともに当該先端部に広幅
が形成され、絶縁性の接着材をインナーリードの薄肉部
に介在させ放熱板または別体のパッドを固着しインナー
リードを固定支持した複合リードフレームにある。
DISCLOSURE OF THE INVENTION The gist of the present invention is to provide a lead frame in which the inner lead or the tip of the inner lead has a thinner plate thickness than other portions, and the tips of the inner leads are arranged in a staggered manner. The composite lead frame has a wide width formed at its tip end, and an insulating adhesive is interposed in the thin portion of the inner lead to fix a heat sink or a separate pad to fix and support the inner lead.

【0012】[0012]

【作用】本発明は、インナーリードまたはインナーリー
ド先端部は板厚を薄くした箇所に形成されてリ−ドピッ
チを微細にできたうえに、その先端部は千鳥状に配置し
ているので、当該先端部にワイヤ−ボンディングゾ−ン
を広幅として確保できる。前記インナーリードまたはイ
ンナーリード先端部を形成した薄肉部分に、絶縁性の接
着材を介在させ放熱板または別体のパッドを設けている
ので、当該インナーリードまたはインナーリード先端部
は固定補強されワイヤ−ボンディングの際、接続不良を
生じることなく安定して高速にて溶接接続できる。さら
に熱放散能も兼備し半導体装置の信頼性が高まる。
According to the present invention, since the inner lead or the inner lead tip portion is formed in a portion where the plate thickness is thinned so that the lead pitch can be made fine, and the tip portions are arranged in a staggered manner. A wide wire-bonding zone can be secured at the tip. Since the heat dissipation plate or the separate pad is provided with the insulating adhesive interposed in the thin portion where the inner lead or the inner lead tip is formed, the inner lead or the inner lead tip is fixed and reinforced. During bonding, stable welding can be performed at high speed without causing connection failure. In addition, it also has the ability to dissipate heat, increasing the reliability of the semiconductor device.

【0013】[0013]

【実施例】以下に、本発明について1実施例に基いて図
面を参照して詳細に説明する。図面において、1はイン
ナーリードで、チップを搭載するパッド2の周りに設け
られている。該インナーリード1は図3に示すように素
材金属板3の板厚をエッチング、化学研磨、電解研磨等
で薄くした部分4に形成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings based on an embodiment. In the drawing, 1 is an inner lead, which is provided around a pad 2 on which a chip is mounted. As shown in FIG. 3, the inner lead 1 is formed in a portion 4 in which the material metal plate 3 is thinned by etching, chemical polishing, electrolytic polishing or the like.

【0014】インナーリード1の先端域1aは図2のよ
うに千鳥状に配設し、該先端域1aには広幅を形成して
いる。前記千鳥状とすることでリ−ドピッチは狭くでき
て多ピン化を図ったうえで、ワイヤ−ボンディングゾ−
ンとなる前記先端域1aに幅広を形成でき、例えば20
0ピン以上のリードフレームでも80〜120μm幅を
確保できる。
The tip region 1a of the inner lead 1 is arranged in a staggered manner as shown in FIG. 2, and the tip region 1a is formed wide. By forming the zigzag pattern, the lead pitch can be narrowed and the number of pins can be increased.
A wide width can be formed in the tip region 1a which becomes
Even a lead frame with 0 or more pins can secure a width of 80 to 120 μm.

【0015】この実施例ではインナーリード1の中間部
から先端部を薄肉化部分4に形成しているが、インナー
リード1の全体を形成するようにしてもよい。
In this embodiment, the thinned portion 4 is formed from the middle portion of the inner lead 1 to the tip portion, but the inner lead 1 may be formed entirely.

【0016】5はアウターリードで、インナーリード1
が連なっている。6はダムバ−で、インナーリード1よ
り内方をその後、樹脂封止する際に樹脂が外側に流出す
るのを阻止するものである。
Reference numeral 5 is an outer lead, and inner lead 1
Are lined up. Reference numeral 6 denotes a dam bar which prevents the resin from flowing out when the inside of the inner lead 1 is subsequently sealed with the resin.

【0017】7はサポ−トバ−で前記パッド2を支持し
ている。8はサイドレ−ル、9はガイドホ−ルである。
A support bar 7 supports the pad 2. Reference numeral 8 is a side rail, and 9 is a guide wheel.

【0018】このリードフレームLの製造はすべてエッ
チング法てもよいし、インナーリード1あるいはインナ
ーリード先端部はエッチング法で、他のリードパターン
はプレス法で形成してもよい。
The lead frame L may be manufactured by an etching method, the inner lead 1 or the tip of the inner lead may be formed by an etching method, and the other lead patterns may be formed by a pressing method.

【0019】ところで、パッド2にはチップ9が図4で
示すように搭載され、インナーリード1とチップ端子が
ワイヤ−10を介してボンディング例えば超音波法で溶
接接続されるが、インナーリード1の先端部は薄肉化部
分4に形成され機械的強度が弱く、当該溶接時の接触力
で前だれしたり、溶接後のワイヤ−切断の際に当該ワイ
ヤ−に掛かる引張り力でインナーリード1の先端部が引
き上げられ変形することがある。また前記薄肉化により
インナーリード1の先端部の下部に空間が存在したまま
であると、ワイヤ−ボンディング時に溶接熱が上がらず
接続不良を生じる。
By the way, the chip 9 is mounted on the pad 2 as shown in FIG. 4, and the inner lead 1 and the chip terminal are connected by welding, for example, by an ultrasonic method, via the wire-10. The tip portion is formed in the thinned portion 4 and has a weak mechanical strength. The tip portion of the inner lead 1 is bent by the contact force at the time of welding, or the pulling force applied to the wire after cutting the wire after welding. The part may be pulled up and deformed. Further, if there is a space below the tip of the inner lead 1 due to the thinning, the welding heat does not rise during wire bonding, resulting in poor connection.

【0020】係ることがないように、図4のようにイン
ナーリード1の先端部の下部に絶縁性の接着材11を介
在させて放熱板12を設け、インナーリード先端部を固
定している。これでインナーリード1の先端部はワイヤ
−ボンディングの際に変形を生じることがない。またイ
ンナーリード1の先端部下方の空間は埋められ接続不良
を生じない。
To avoid this, as shown in FIG. 4, a heat radiating plate 12 is provided below the tip of the inner lead 1 with an insulating adhesive 11 interposed to fix the tip of the inner lead. As a result, the tips of the inner leads 1 will not be deformed during wire bonding. Further, the space below the tip of the inner lead 1 is filled so that no connection failure occurs.

【0021】この実施例ではリードフレームLはパッド
2を一体的に形成しているが、これに限らず図5に示す
ように別体で形成したパッド2を、接着材11を介在さ
せてインナーリード1の先端部の下方に設け固定するよ
うにしてもよい。
In this embodiment, the lead frame L is integrally formed with the pad 2. However, the present invention is not limited to this, and the pad 2 separately formed as shown in FIG. It may be provided below the tip of the lead 1 and fixed.

【0022】また、インナーリード1の先端部と前記放
熱板12または別体のパッド2の接着材11としては両
面接着テ−プ等も採用できる。
A double-sided adhesive tape or the like can be used as the adhesive 11 between the tip of the inner lead 1 and the heat dissipation plate 12 or the separate pad 2.

【0023】[0023]

【発明の効果】本発明は板厚を薄くした領域に微細なイ
ンナーリードまたはインナーリード先端部を形成し多ピ
ンとしているとともに、当該インナーリードの先端域を
千鳥状に配置しているので、先端域に広幅を形成できワ
イヤ−ボンディングゾ−ンのリ−ド幅が広まる。
According to the present invention, fine inner leads or inner lead tips are formed in a thinned area to form a multi-pin structure, and the tip areas of the inner leads are arranged in a zigzag manner. A wide width can be formed in the area, and the lead width of the wire bonding zone is widened.

【0024】また、インナーリードまたはインナーリー
ド先端部は接着材を介在させて放熱板、または別体のパ
ッドで固定支持されているので変形ぜず、前記先端域の
広幅と相乗して、ワイヤ−ボンディング作業が接続不良
を生じることなく確実に高速下にできる。
Further, since the inner lead or the tip of the inner lead is fixed and supported by a heat sink or a separate pad with an adhesive material interposed, it does not deform, and synergizes with the wide width of the tip region, and the wire The bonding work can be surely performed at a high speed without causing a connection failure.

【0025】また、放熱板を前述のように設けるので、
高密度のチップを搭載した半導体装置の使用時の発熱は
放散され長時間にわたって機能が維持され信頼性が優れ
る。
Since the heat sink is provided as described above,
The heat generated when a semiconductor device having a high-density chip is used is dissipated, the function is maintained for a long time, and the reliability is excellent.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の1実施例におけるリードフレームを示
す図。
FIG. 1 is a diagram showing a lead frame according to an embodiment of the present invention.

【図2】本発明の1実施例におけるインナーリードの配
設を拡大して示す図。
FIG. 2 is an enlarged view showing an arrangement of inner leads according to an embodiment of the present invention.

【図3】本発明の1実施例におけるリードフレームの断
面を示す図。
FIG. 3 is a diagram showing a cross section of a lead frame in one embodiment of the present invention.

【図4】本発明の1実施例において放熱板を設けた複合
リードフレームを示す図。
FIG. 4 is a diagram showing a composite lead frame provided with a heat dissipation plate in one embodiment of the present invention.

【図5】本発明の他の実施例で別体のパッドを複合した
リードフレームを示す図。
FIG. 5 is a view showing a lead frame in which separate pads are combined in another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 インナーリード 2 パッド 3 素材金属板 4 薄肉化部分 5 アウターリード 6 ダムバ− 7 サポ−トバ− 8 サイドレ−ル 9 チップ 10 ワイヤ− 11 接着材 12 放熱板 L リードフレーム 1 Inner Lead 2 Pad 3 Material Metal Plate 4 Thinned Part 5 Outer Lead 6 Dam Bar 7 Support Bar 8 Side Rail 9 Chip 10 Wire 11 Adhesive 12 Heat Sink L Lead Frame

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 インナーリードまたはインナーリード先
端部の板厚を他の部分より薄くしたリードフレームにお
いて、インナーリードの先端部を千鳥状に配設するとと
もに当該先端部に広幅を形成し、絶縁性の接着材をイン
ナーリードの薄肉部に介在させ放熱板または別体のパッ
ドを固着したことを特徴とする複合リードフレーム。
1. In a lead frame in which the inner lead or the inner lead tip has a thinner plate thickness than other portions, the tip of the inner lead is arranged in a staggered manner, and a wide width is formed at the tip to provide insulation. A composite lead frame, characterized in that the adhesive material of (3) is interposed in the thin portion of the inner lead and a heat sink or a separate pad is fixed.
JP28193393A 1993-10-14 1993-10-14 Composite lead frame Expired - Fee Related JP3013133B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28193393A JP3013133B2 (en) 1993-10-14 1993-10-14 Composite lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28193393A JP3013133B2 (en) 1993-10-14 1993-10-14 Composite lead frame

Publications (2)

Publication Number Publication Date
JPH07115164A true JPH07115164A (en) 1995-05-02
JP3013133B2 JP3013133B2 (en) 2000-02-28

Family

ID=17645962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28193393A Expired - Fee Related JP3013133B2 (en) 1993-10-14 1993-10-14 Composite lead frame

Country Status (1)

Country Link
JP (1) JP3013133B2 (en)

Also Published As

Publication number Publication date
JP3013133B2 (en) 2000-02-28

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