JPH0711472Y2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0711472Y2
JPH0711472Y2 JP1991096934U JP9693491U JPH0711472Y2 JP H0711472 Y2 JPH0711472 Y2 JP H0711472Y2 JP 1991096934 U JP1991096934 U JP 1991096934U JP 9693491 U JP9693491 U JP 9693491U JP H0711472 Y2 JPH0711472 Y2 JP H0711472Y2
Authority
JP
Japan
Prior art keywords
heat dissipation
semiconductor device
semiconductor element
external heat
radiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1991096934U
Other languages
Japanese (ja)
Other versions
JPH0672247U (en
Inventor
隆昭 横山
弘三 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP1991096934U priority Critical patent/JPH0711472Y2/en
Publication of JPH0672247U publication Critical patent/JPH0672247U/en
Application granted granted Critical
Publication of JPH0711472Y2 publication Critical patent/JPH0711472Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】本考案は、半導体装置、特に自動
車用発電機の出力を整流に適する半導体装置の構造に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of a semiconductor device, particularly a semiconductor device suitable for rectifying the output of an automobile generator.

【0002】[0002]

【従来の技術】図8に示すように、自動車用発電機に使
用する従来の整流装置(1)は、完成した複数の個別的
な整流ダイオード(2)を半田(3)により放熱器(4)
に固着した構造を有する。電流容量や自動車への取付構
造の相違に対応して、多種多様な形状及び大きさの放熱
器(4)が選択され使用されている。整流ダイオード
(2)は、金属容器(6)とリード電極(7)との間に半
田で接着されたダイオードチップ(図示せず)を有し、
これらのダイオードチップは金属容器(6)内に充填さ
れ硬化した封止樹脂(5)によって封止される。
2. Description of the Related Art As shown in FIG. 8, a conventional rectifier (1) used in an automobile generator has a plurality of individual completed rectifier diodes (2) soldered (3) to a radiator (4). )
It has a structure fixed to the. A variety of shapes and sizes of radiators (4) are selected and used according to the difference in current capacity and mounting structure to automobiles. The rectifier diode (2) has a diode chip (not shown) bonded between the metal container (6) and the lead electrode (7) with solder,
These diode chips are sealed with a sealing resin (5) which is filled and hardened in a metal container (6).

【0003】[0003]

【考案が解決しようとする課題】整流装置(1)の製造
工程では、半田(3)により整流ダイオード(2)を放熱
器(4)に接着する半田付け作業を行う。その際、整流
ダイオード(2)はその許容保存温度150℃を越える
200℃以上の温度まで放熱器(4)とともに加熱され
るので、整流ダイオード(2)の特性が劣化することが
あった。
[Problems to be Solved by the Invention] In the manufacturing process of a rectifying device (1), soldering work is performed in which a rectifying diode (2) is bonded to a radiator (4) by solder (3). At that time, since the rectifier diode (2) is heated together with the radiator (4) to a temperature of 200 ° C. or higher, which exceeds the allowable storage temperature 150 ° C., the characteristics of the rectifier diode (2) may be deteriorated.

【0004】前記半田付けを電装品メーカーで行う場
合、半田付け後、粉体塗装工程等を行い、その後に整流
装置(1)の品質検査を行うのが一般的である。従っ
て、半田付け作業で特性が劣化した不良の整流ダイオー
ド(2)を含む不良品である整流装置(1)に対して粉体
塗装等を行う無駄がある。
When the above-mentioned soldering is performed by an electric equipment manufacturer, it is general that after the soldering, a powder coating process or the like is performed, and then the quality inspection of the rectifying device (1) is performed. Therefore, there is a waste of powder coating or the like on the defective rectifying device (1) including the defective rectifying diode (2) whose characteristics are deteriorated by the soldering work.

【0005】他面、半導体装置メーカーは、出荷先で不
良にならない製品の製造及び納入を目標としている。電
装品メーカーで整流ダイオード(2)に不良が発生する
と、理由の如何を問わず、半導体装置メーカーの責任を
問われる危険がある。そこで、半導体装置メーカーが整
流ダイオード(2)の半田付け作業を請け負い、半田付
けに伴う不良品を除いて、電装品メーカーに整流装置
(1)を納入する生産納品形態が採用されることが多
い。
On the other hand, semiconductor device manufacturers aim to manufacture and deliver products that do not become defective at the shipping destination. If the rectifier diode (2) fails in the electrical equipment manufacturer, there is a risk that the semiconductor device manufacturer will be held responsible for whatever reason. Therefore, in many cases, a semiconductor device manufacturer takes charge of soldering work of the rectifier diode (2) and removes defective products due to soldering, and delivers the rectifier device (1) to the electrical equipment manufacturer. .

【0006】しかし、半導体装置メーカーが整流ダイオ
ード(2)の半田付け作業を行う場合、前述のように、
放熱器には多種多様の大きさ及び形状があるので、整流
装置(1)の生産は少量多品種となり、生産性が低下す
る。また、半導体装置メーカーと電装品メーカーの両方
が整流ダイオード(2)に比べて遥かに大きな放熱器
(4)を扱わなければならない不便がある。
However, when the semiconductor device manufacturer solders the rectifying diode (2), as described above,
Since the radiator has various sizes and shapes, the rectifier (1) is produced in a small quantity and in various types, and the productivity is reduced. Also, both semiconductor device manufacturers and electrical equipment manufacturers have the inconvenience of having to deal with a radiator (4) that is much larger than the rectifier diode (2).

【0007】そこで本考案は、電装品メーカー等の半導
体装置の納入先で不良が発生せず、かつ生産性の高い半
導体装置を提供することを目的とする。
[0007] Therefore, an object of the present invention is to provide a semiconductor device such as an electric component manufacturer that does not cause a defect at the delivery destination of the semiconductor device and has high productivity.

【0008】[0008]

【課題を解決するための手段】本考案の半導体装置は、
金属製の放熱基板及び放熱基板の一方の主面に載置され
た半導体素子を有する半導体素子体と、半導体素子体に
固定された金属製の外部放熱体とを備えている。放熱基
板の他方の主面に形成された凹凸の結合面は、外部放熱
体に形成された凹凸の結合面に対して熱伝導性の良い薄
膜を介して嵌合状態で押圧される。
The semiconductor device of the present invention comprises:
A metal heat dissipation board and a semiconductor element body having a semiconductor element mounted on one main surface of the heat dissipation board, and a metal external heat dissipation body fixed to the semiconductor element body are provided. The concavo-convex coupling surface formed on the other main surface of the heat dissipation substrate is pressed against the concavo-convex coupling surface formed on the external heat radiator in a fitted state via a thin film having good thermal conductivity.

【0009】[0009]

【作用】半導体素子体は、大量生産が可能であり、また
種々の大きさ及び形状の外部放熱体に対し適宜組合せて
放熱性の優れた半導体装置を構成できる。更に、放熱基
板の結合面と外部放熱体の結合面との間に熱伝導性の良
い薄膜が介在して両者が嵌合されるので、放熱基板から
外部放熱体への熱伝導性が向上する。
The semiconductor element body can be mass-produced, and a semiconductor device having excellent heat dissipation can be constructed by appropriately combining it with external heat radiators of various sizes and shapes. Furthermore, since a thin film having good thermal conductivity is interposed between the coupling surface of the heat radiation substrate and the coupling surface of the external heat radiator, the both are fitted together, so that the thermal conductivity from the heat radiation substrate to the external heat radiator is improved. .

【0010】[0010]

【実施例】以下、自動車用整流装置に適用した本考案の
第一実施例を図1〜図6について説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention applied to an automobile rectifier will be described below with reference to FIGS.

【0011】図1に示すように、本考案の半導体装置
(11)は、半導体素子体(12)と半導体素子体(12)に
固着された外部放熱体(13)とから成る。半導体素子体
(12)は3個の整流ダイオード(14)と放熱基板(15)
とを有する。
As shown in FIG. 1, the semiconductor device (11) of the present invention comprises a semiconductor element body (12) and an external heat radiator (13) fixed to the semiconductor element body (12). The semiconductor element body (12) includes three rectifying diodes (14) and a heat dissipation board (15).
Have and.

【0012】整流ダイオード(14)の各々は、放熱基板
(15)の一方の主面(15a)上に半田(16)により接着
されたダイオードチップ(17)を有する。ダイオードチ
ップ(17)の上面には、半田(18)を介してリード電極
(19)が接着されている。ダイオードチップ(17)全体
とリード電極(19)の一端側は、シリコン樹脂より成る
保護樹脂(20)により被覆されている。保護樹脂(20)
とリード電極(19)の一端側は、エポキシ樹脂より成る
封止樹脂(21)により被覆されている。図2及び図3に
示すように、リード電極(19)の他端側は封止樹脂(2
1)より導出されている。
Each of the rectifying diodes (14) has a diode chip (17) bonded by solder (16) on one main surface (15a) of the heat dissipation board (15). The lead electrode (19) is bonded to the upper surface of the diode chip (17) through the solder (18). The entire diode chip (17) and one end of the lead electrode (19) are covered with a protective resin (20) made of silicone resin. Protective resin (20)
One end of the lead electrode (19) is covered with a sealing resin (21) made of epoxy resin. As shown in FIGS. 2 and 3, the other end of the lead electrode (19) is covered with a sealing resin (2
It is derived from 1).

【0013】放熱基板(15)は、放熱性の優れた金属、
例えばニッケルで被覆した銅より成る。放熱基板(15)
の他方の主面(15b)は、凹凸の結合面(15c)を有す
る。外部放熱体(13)の一方の主面(13a)は放熱基板
(15)の凹凸の結合面(15c)と係合する凹凸の結合面
(13b)を有する。
The heat dissipating board (15) is made of a metal having excellent heat dissipation.
It consists, for example, of copper coated with nickel. Heat dissipation board (15)
The other main surface (15b) has a concavo-convex coupling surface (15c). One main surface (13a) of the external heat radiator (13) has an uneven coupling surface (13b) that engages with the uneven coupling surface (15c) of the heat dissipation board (15).

【0014】放熱基板(15)の凹凸の結合面(15c)は
鋸歯状断面を有し、その凹部は平行に走る多数本のV溝
を形成する。放熱器板(15)の両端には、取付けネジ
(23)を挿通する貫通孔(24)が設けてある。外部放熱
体(13)は、アルミニウム等の放熱性のよい金属より成
る。外部放熱体(13)の凹凸の結合面(13b)は、放熱
基板(15)の凹凸の結合面(15c)と係合するように相
補的形状の鋸歯状断面を有し、その凹部は平行に走るV
溝を形成する。また、一方の主面(13a)には、取付ネ
ジ孔(25)が設けてある。外部放熱体(13)の他方の主
面(13c)には、放熱作用を促進する放熱フィン(26)
が設けられる。図5に部分的に拡大して示すように、凹
凸の結合面(13b)と(15c)との間にアルミ箔等の熱伝
導性の良い薄膜(28)が配置される。半導体素子体(1
2)は、ワッシャ(27)を介して取付ネジ(23)によっ
て外部放熱体(13)に取付けられる。取付ネジ(23)の
締付けの際、放熱基板(15)の凹凸の結合面(15c)は
外部放熱体(13)の凹凸の結合面(13b)に対し押圧さ
れ、互いに嵌合状態で強く密着結合するから、放熱基板
(15)の他方の主面(15b)と外部放熱器(13)の一方
の主面(13a)は熱伝導性の良い薄膜(28)を介して熱
伝達の良好な結合部を形成する。この場合、凹凸の結合
面(13b)と(15c)の各凸部の先端を一定の高さで微か
にカットして、凹凸の結合面(13b)と(15c)とを均一
に密着させるとよい。
The concavo-convex coupling surface (15c) of the heat dissipation substrate (15) has a saw-toothed cross section, and the concave portion forms a large number of V grooves running in parallel. Through holes (24) for inserting the mounting screws (23) are provided at both ends of the radiator plate (15). The external heat radiator (13) is made of a metal having a good heat radiation property such as aluminum. The concavo-convex coupling surface (13b) of the external heat radiator (13) has a complementary sawtooth cross section so as to engage with the concavo-convex coupling surface (15c) of the heat dissipation board (15), and the concave portions thereof are parallel to each other. V running to
Form a groove. A mounting screw hole (25) is provided on the one main surface (13a). On the other main surface (13c) of the external radiator (13), there are radiating fins (26) for promoting heat radiation.
Is provided. As shown in a partially enlarged view in FIG. 5, a thin film (28) having good thermal conductivity, such as an aluminum foil, is arranged between the concave and convex coupling surfaces (13b) and (15c). Semiconductor element body (1
2) is attached to the external heat radiator (13) with a mounting screw (23) via a washer (27). When the mounting screw (23) is tightened, the uneven connection surface (15c) of the heat dissipation board (15) is pressed against the uneven connection surface (13b) of the external heat radiator (13), and strongly adheres to each other in a fitted state. Since they are coupled, the other main surface (15b) of the heat dissipation board (15) and one main surface (13a) of the external radiator (13) have good heat transfer through the thin film (28) having good heat conductivity. Form a joint. In this case, if the tip of each convex portion of the concavo-convex joint surface (13b) and (15c) is slightly cut at a constant height, the concavo-convex joint surface (13b) and (15c) can be adhered evenly. Good.

【0015】例えば図4の自動車用交流発電機の整流回
路に使用される半導体装置(11)のダイオードチップ1
7は、破線で示す並列接続部(a)及び(b)において自
動車用交流発電機より得られる三相交流を整流する。
For example, the diode chip 1 of the semiconductor device (11) used in the rectifier circuit of the automotive alternator shown in FIG.
7 rectifies the three-phase alternating current obtained from the automotive alternator at the parallel connection parts (a) and (b) indicated by the broken line.

【0016】本考案では、従来のように半田付けを必要
とせずに、半導体素子体(12)を外部放熱体(13)に取
付けることができるから、半導体装置メーカーは、上記
取付けを電装品メーカーに依託することが可能となっ
た。これにより本実施例では、半導体装置メーカーにて
半導体素子体(12)を製造し、電装品メーカーに納入で
きる。電装品メーカーでは、自動車の車種等に応じた種
々の大きさ、形状を有する外部放熱体(13)を用意し、
ねじ止めにより半導体装置(11)を組立てる。
In the present invention, since the semiconductor element body (12) can be attached to the external heat radiating body (13) without the need for soldering as in the conventional case, the semiconductor device maker is required to attach the above-mentioned attachment to the electrical equipment maker. It became possible to entrust to. As a result, in this embodiment, the semiconductor device body (12) can be manufactured by the semiconductor device manufacturer and delivered to the electrical equipment manufacturer. The electrical equipment manufacturer prepares external radiators (13) having various sizes and shapes according to the type of automobile,
Assemble the semiconductor device (11) by screwing.

【0017】上記工程を経て完成する半導体装置(11)
は、放熱特性にも問題はなく生産性も向上することが判
明した。特に、樹脂封止後は、整流ダイオード(14)に
対して半田付けを行わないので、従来問題となった半田
付けに伴う整流ダイオードの特性劣化は全く起こらな
い。
A semiconductor device (11) completed through the above steps
Was found to have no problem in heat dissipation characteristics and to improve productivity. In particular, since the rectifying diode (14) is not soldered after the resin sealing, the characteristic deterioration of the rectifying diode due to the soldering, which has been a conventional problem, does not occur at all.

【0018】また、従来の整流装置(1)では、整流ダ
イオード(2)を放熱器(4)に固着する際の半田付けに
より、整流ダイオード(2)の封止樹脂(5)が加熱さ
れ、クラックが生じたり、金属容器(6)又はリード電
極(7)と封止樹脂(5)との間に剥離が発生する危険が
あった。このため、封止樹脂(5)として硬質樹脂を使
用できず、軟質樹脂のみを使用していた。ところが、軟
質樹脂は、外部からの有害物質の侵入を防止する能力の
点で硬質樹脂に比べて遥かに劣る。本考案の第一実施例
では、樹脂封止後に整流ダイオードを被接着体に半田付
けで固着しないので、封止樹脂(21)として硬質樹脂を
使用でき、封止樹脂の材料選択の自由度が向上するの
で、耐環境性能を向上させることが可能となる。
Further, in the conventional rectifier (1), the sealing resin (5) of the rectifier diode (2) is heated by soldering when fixing the rectifier diode (2) to the radiator (4), There is a risk that cracks may occur or peeling may occur between the metal container (6) or the lead electrode (7) and the sealing resin (5). Therefore, a hard resin cannot be used as the sealing resin (5), and only a soft resin is used. However, the soft resin is far inferior to the hard resin in the ability to prevent invasion of harmful substances from the outside. In the first embodiment of the present invention, since the rectifying diode is not fixed to the adherend by soldering after the resin sealing, hard resin can be used as the sealing resin (21), and the degree of freedom in selecting the material of the sealing resin is high. Since it is improved, it becomes possible to improve the environmental resistance performance.

【0019】次に、本考案の第二実施例を示す図7につ
いて説明する。図7では、図1及び図8に示す部分と同
一の個所については同一符号を付し、説明を省略する。
第二実施例の整流装置(31)は、整流ダイオード(2)
と放熱基板(15)から成る半導体素子体(32)を外部放
熱体(13)に取付けた構造を有する。放熱基板(15)の
上面には、半田(3)を介して3個の整流ダイオード
(2)が接着されている。整流ダイオード(2)は、図8
のものと同一であり、また放熱基板(15)と外部放熱体
(13)の結合構造は図1のものと同一である。第二実施
例では、半田付けによる特性劣化を防止する効果はあま
り高くないが、後工程又は電装品メーカーでの故障防止
効果及び形状又は大きさの異なる外部放熱体を使用でき
る利点は発揮される。
Next, FIG. 7 showing a second embodiment of the present invention will be described. In FIG. 7, the same parts as those shown in FIGS. 1 and 8 are designated by the same reference numerals, and the description thereof will be omitted.
The rectifier (31) of the second embodiment is a rectifier diode (2).
A semiconductor element body (32) composed of a heat dissipation board (15) is attached to an external heat dissipation body (13). Three rectifying diodes (2) are bonded to the upper surface of the heat dissipation board (15) via solder (3). The rectifier diode (2) is shown in Fig. 8.
The same as that of FIG. 1 and the coupling structure of the heat dissipation board (15) and the external heat dissipation body (13) is the same as that of FIG. In the second embodiment, the effect of preventing characteristic deterioration due to soldering is not very high, but the effect of preventing failure in the post-process or electrical equipment manufacturers and the advantage of being able to use external heat radiators of different shapes or sizes are exhibited. .

【0020】本考案の上記実施例は種々の変形が可能で
ある。例えば、3個の整流ダイオードを含む本考案の半
導体装置を図4に示したが、図4の並列接続部(a)
(b)の整流ダイオ−ド各1個から成る2個の整流ダイ
オードを含む半導体装置にも本考案を実施することも可
能である。ニッケルで被覆した銅の代りに、アルミニウ
ム材を放熱基板(15)として使う場合、整流ダイオード
の固着部分には半田付けが必要となるので、アルミニウ
ム材の上にニッケル層を形成するとよい。このニッケル
層は、亜鉛の置換メッキ層を介してニッケルメッキを行
うか、ニッケル層を圧着して形成することができる。放
熱基板(15)の取付けはねじ止めが最適であるが、リベ
ット止め等で行なうこともできる。
The above embodiment of the present invention can be variously modified. For example, the semiconductor device of the present invention including three rectifying diodes is shown in FIG. 4, and the parallel connection part (a) of FIG.
It is also possible to implement the present invention in a semiconductor device including two rectifying diodes, each of which is one rectifying diode (b). When an aluminum material is used as the heat dissipation substrate (15) instead of nickel-coated copper, soldering is required for the fixed portion of the rectifier diode, so a nickel layer may be formed on the aluminum material. This nickel layer can be formed by nickel plating via a zinc displacement plating layer or by pressure bonding the nickel layer. The heat dissipation board (15) is best attached by screws, but it can also be attached by rivets.

【0021】本実施例の効果は以下の通りである。The effects of this embodiment are as follows.

【0022】(1) 整流装置の生産性を向上できる。
即ち本考案の半導体装置では、半導体素子体の大きさ又
は形状を変更することなく、形状、大きさの異なる外部
放熱体に取付けることにより、電流容量又は取付け構造
によって異なる多種多様な要求に広く対応できる。電装
品メーカーでは、前述の半田付け作業を必要とせず、半
導体素子体の外部放熱体への取付けを行うことができ
る。よって半導体装置メーカーとしては、整流装置の生
産体制を少量多品種生産から多量生産へ移行することが
可能となり、生産性を向上することができる。外部放熱
体に比べて放熱基板は小さいから、半導体装置メーカー
が小形の半導体素子体を扱える点で生産性向上のメリッ
トも生まれる。なお電装品メーカーの場合は、多種多様
な自動車に合わせた生産体制が採用され、半導体装置メ
ーカーより大きい物品を扱うので、外部放熱体を扱って
も生産性は実質的に低下しない。
(1) The productivity of the rectifier can be improved.
That is, in the semiconductor device of the present invention, by mounting the semiconductor element body on an external heat radiator having a different shape and size without changing the size or shape of the semiconductor element body, it is possible to widely meet various requirements depending on the current capacity or the mounting structure. it can. The electrical equipment manufacturer can attach the semiconductor element body to the external heat radiator without the need for the above-mentioned soldering work. Therefore, as a semiconductor device manufacturer, it is possible to shift the production system of the rectifier from the small-quantity multi-product production to the large-volume production, and improve the productivity. Since the heat dissipation board is smaller than the external heat dissipation body, there is an advantage of improving productivity in that semiconductor device manufacturers can handle small semiconductor element bodies. In addition, in the case of electrical equipment manufacturers, since a production system adapted to a wide variety of automobiles is adopted and articles larger than those of semiconductor device manufacturers are handled, the productivity does not substantially decrease even if the external heat radiator is handled.

【0023】(2) 半導体装置メーカーは半導体素子
体の組立を行い、製品検査後に、出荷先で不良が起きな
い良品のみを電装品メーカーに納入できる。
(2) The semiconductor device maker can assemble the semiconductor element body, and after the product inspection, can deliver only non-defective products to the electrical component manufacturer without any defect at the shipping destination.

【0024】(3) 製品の検査後に、半導体装置メー
カーから納入された製品に粉体塗装等の加工を行うの
で、不良品に粉体塗装等の加工を行う電装品メーカーで
の無駄工程の削減が可能となる。
(3) After the product inspection, the products delivered from the semiconductor device manufacturer are subjected to powder coating and other processing, so reduction of wasteful processes at the electrical equipment manufacturer that performs powder coating and other processing on defective products Is possible.

【0025】(4) 本考案の放熱基板は、従来の放熱
器よりも小さくかつ熱容量も小さいから、所定の半田付
温度に達するまでの時間及び半田付温度からある温度ま
で冷える時間が短くなる。従って本考案では、半田付時
間は従来と同じでも、整流ダイオードの高温保持時間を
短縮できるので、整流ダイオードの特性劣化が生じにく
い。整流ダイオードを被接着体に接着する半田付けにお
いて不良ダイオードの発生を軽減することができる。
(4) Since the heat dissipation substrate of the present invention is smaller and has a smaller heat capacity than the conventional heat dissipation device, the time required to reach a predetermined soldering temperature and the time required to cool from the soldering temperature to a certain temperature are shortened. Therefore, in the present invention, even if the soldering time is the same as the conventional one, the high temperature holding time of the rectifier diode can be shortened, and therefore the characteristic deterioration of the rectifier diode is less likely to occur. It is possible to reduce the occurrence of defective diodes in soldering for bonding the rectifier diode to the adherend.

【0026】[0026]

【考案の効果】前述のように、本考案では、放熱基板の
凹凸の結合面は、外部放熱体の凹凸の結合面に対して熱
伝導性の良い薄膜を介して嵌合状態で押圧されるので、
良好な放熱性を有する半導体装置が得られる。
As described above, according to the present invention, the concavo-convex coupling surface of the heat dissipation board is pressed against the concavo-convex coupling surface of the external heat radiator in a fitted state via the thin film having good thermal conductivity. So
A semiconductor device having excellent heat dissipation can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案による半導体装置の第一実施例を示す図
2のI−I線に沿う分解断面図
FIG. 1 is an exploded sectional view taken along the line II of FIG. 2 showing a first embodiment of a semiconductor device according to the present invention.

【図2】半導体装置の斜視図FIG. 2 is a perspective view of a semiconductor device.

【図3】図2のIII−III線に沿う断面図FIG. 3 is a sectional view taken along line III-III in FIG.

【図4】本考案による半導体装置を接続した回路図FIG. 4 is a circuit diagram in which a semiconductor device according to the present invention is connected.

【図5】放熱基板と外部放熱体の間に薄膜を挿入する場
合の分解断面図
FIG. 5 is an exploded sectional view when a thin film is inserted between a heat dissipation board and an external heat dissipation body.

【図6】図5の組立後の断面図6 is a cross-sectional view after assembly of FIG.

【図7】本考案の第二実施例を示す半導体装置の斜視図FIG. 7 is a perspective view of a semiconductor device showing a second embodiment of the present invention.

【図8】従来の半導体装置の斜視図FIG. 8 is a perspective view of a conventional semiconductor device.

【符号の説明】 (2)、(14)..整流ダイオード、 (11)、(3
1)..半導体装置、 (12)、(32)..半導体素子
体、 (13)..外部放熱体、 (13a)..一方の主
面、 (13b)..凹凸の結合面、 (15)..放熱基
板、 (15a)..一方の主面、 (15b)..他方の主
面、 (15c)..凹凸の結合面、 (17)..ダイオー
ドチップ(半導体素子)、 (21)..封止樹脂、 (2
8)..薄膜、
[Explanation of symbols] (2), (14). . Rectifier diode, (11), (3
1). . Semiconductor device, (12), (32). . Semiconductor device body, (13). . External radiator, (13a). . One main surface, (13b). . Concavo-convex coupling surface, (15). . Heat dissipation board, (15a). . One major surface, (15b). . The other major surface, (15c). . Concavo-convex joint surface, (17). . Diode chip (semiconductor element), (21). . Sealing resin, (2
8). . Thin film,

Claims (4)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 金属製の放熱基板及び該放熱基板の一方
の主面に載置された半導体素子を有する半導体素子体
と、該半導体素子体に固定された金属製の外部放熱体と
を備え、前記放熱基板の他方の主面に形成された凹凸の
結合面は、前記外部放熱体に形成された凹凸の結合面に
対して熱伝導性の良い薄膜を介して嵌合状態で押圧され
ることを特徴とする半導体装置。
1. A semiconductor element body having a metal heat dissipation board and a semiconductor element mounted on one main surface of the heat dissipation board, and a metal external heat dissipation body fixed to the semiconductor element body. The concavo-convex coupling surface formed on the other main surface of the heat dissipation substrate is pressed against the concavo-convex coupling surface formed on the external heat radiator in a fitted state via a thin film having good thermal conductivity. A semiconductor device characterized by the above.
【請求項2】前記放熱基板と外部放熱体の凹凸の結合面
はテーパ状の凹凸として形成された「請求項1」記載の
半導体装置。
2. The semiconductor device according to claim 1, wherein a coupling surface of the unevenness of the heat dissipation substrate and the external heat dissipation body is formed as a tapered unevenness.
【請求項3】前記外部放熱体の他方の主面は多数の放熱
フィンを有する「請求項1」記載の半導体装置。
3. The semiconductor device according to claim 1, wherein the other main surface of the external heat radiator has a large number of heat radiation fins.
【請求項4】前記半導体素子は、前記放熱基板に接着さ
れた個別的な整流ダイオ−ドである「請求項1」記載の
半導体装置。
4. The semiconductor device according to claim 1, wherein the semiconductor element is an individual rectifying diode bonded to the heat dissipation board.
JP1991096934U 1991-11-26 1991-11-26 Semiconductor device Expired - Lifetime JPH0711472Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1991096934U JPH0711472Y2 (en) 1991-11-26 1991-11-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1991096934U JPH0711472Y2 (en) 1991-11-26 1991-11-26 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0672247U JPH0672247U (en) 1994-10-07
JPH0711472Y2 true JPH0711472Y2 (en) 1995-03-15

Family

ID=14178171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1991096934U Expired - Lifetime JPH0711472Y2 (en) 1991-11-26 1991-11-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0711472Y2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212390A (en) * 2008-03-05 2009-09-17 Toshiba Corp Attachment structure of heating element mounted component
WO2010090326A1 (en) * 2009-02-09 2010-08-12 株式会社安川電機 Semiconductor device cooling structure and power converter provided with the cooling structure
JP5674537B2 (en) * 2011-04-07 2015-02-25 新電元工業株式会社 Electrical component module
JP5831273B2 (en) * 2012-02-09 2015-12-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2018064399A (en) * 2016-10-14 2018-04-19 日立造船株式会社 Thermoelectric generator
WO2018097027A1 (en) 2016-11-24 2018-05-31 三菱電機株式会社 Semiconductor device and method for producing same
CN110323193A (en) * 2019-07-19 2019-10-11 南京伯克利新材料科技有限公司 A kind of radiator structure
KR102538923B1 (en) * 2022-02-18 2023-06-08 주식회사 비와이티이씨 LED lighting fixtures

Also Published As

Publication number Publication date
JPH0672247U (en) 1994-10-07

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