JPH07113169A - Device for forming thin film - Google Patents

Abstract

PURPOSE:To fill the holes of the wiring film at the bottom of the fine contact hole of extremely high aspect ratio. CONSTITUTION:The vapor deposition source 21 is constituted so that the vapor deposition particles 14 may be emitted with directivity to the film forming substrate 9. The vapor deposition particles 14 fly along the direction almost orthogonal to the film forming surface of the film forming substrate 9 and reach the film forming substrate 9. Hole filling of the wiring film at the bottom can be executed even with fine contact holes with extremely high aspect ratio.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of a thin film for use in forming a submicron size semiconductor wiring film having a contact hole or through hole with a high aspect ratio, which is important for realizing ultra-high integration of LSI. It relates to the device.

[0002]

2. Description of the Related Art With the progress of integration of LSIs, the design rule has become less than half a micron after 64 Mbit DRAM. Further, the aspect ratio (ratio of hole diameter to depth) of the contact hole provided in the semiconductor wiring is 2 or more, and higher reliability is required for disconnection due to migration. Conventionally, a thin film forming apparatus using a magnetron type sputtering method has been used to form this type of wiring, but this apparatus has a limit in improving step coverage.

A conventional thin film forming apparatus in which a magnetron uses a multi-sputtering method will be described with reference to FIGS. Figure 11 shows the Journal of Vacuum Science and Technolo.
gy A. Volume 3, No. 2, 1985 is a schematic configuration diagram schematically showing the conventional sputtering type thin film forming apparatus, and FIG. 12 is a configuration showing a state in which a thin film is formed by the conventional sputtering type thin film forming apparatus. 13 and 14 are cross-sectional views showing a state in which aluminum is vapor-deposited in contact holes by a conventional sputtering type thin film forming apparatus, which is shown in the proceedings of Semicon Japan 88 Technical Symposium.

In these drawings, reference numeral 1 denotes a vacuum chamber, which is connected to an exhaust device 2 and a gas introduction device 3, and a target holder 4 and a substrate holder 5 are provided therein. A magnet 6 is housed inside the target holder 4, and a target 7 serving as an evaporation source for generating vapor deposition particles is attached. The target 7 is made of a vapor deposition material such as titanium. A reference numeral 8 provided near the target 7 is a shutter. The substrate holder 5 has a structure for holding the substrate 9 for film formation and rotating it about an axis orthogonal to the main surface of the substrate 9.

In order to form a thin film on the substrate 9 by the conventional thin film forming apparatus having the above-described structure, first, the pressure inside the vacuum chamber 1 is reduced by the exhaust device 2, and after reaching a predetermined pressure, the argon gas introducing device 3 is used. A gas such as nitrogen gas and argon is introduced into the vacuum chamber 1. Then, a direct current or a high frequency voltage is applied to the substrate 9.

In this way, the target 7 and the substrate 9
A plasma is formed between and. At this time, the magnet 6 in the target holder 4 spirally rotates the electrons in the plasma to promote plasma generation. The argon ions generated in this plasma are accelerated by the bias voltage and collide with the target 7 to sputter the target material when the shutter 8 is open. Then, the titanium vapor deposition material is adhered to the substrate 9 in a nitrogen gas atmosphere to form a titanium nitride wiring barrier film.

Next, the case where the contact hole 10 is formed in the substrate 9 as shown in FIGS. 12 and 13 will be described. The contact hole 10 shown in the figure has a hole diameter of about 0.5 μm, a depth dimension of about 2 μm, and an aspect ratio of about 4. In FIG. 12, the contact hole 10 is exaggerated for easy understanding. Further, in FIG. 13, reference numerals 11, 12, and 13 respectively denote a wiring adhesion layer, a wiring barrier layer, and a wiring layer formed by vapor deposition of titanium, titanium nitride, and aluminum alloy.

As shown in FIG. 12, when the plasma is formed and the vapor deposition particles 14 are sputtered from the target 7, the vapor deposition particles 14 repeatedly collide with the gas particles at the gas pressure introduced into the vacuum chamber 1 at random. Scattered in the direction.
Since the vapor-deposited particles 11 thus scattered have low straightness, it is difficult to enter the fine contact holes 10. That is,
As shown in FIG. 13, since the hole wall surface and the bottom surface of the contact hole 10 grow and become shadows so that the thin film overhangs at the opening edge portion of the contact hole 10,
The film thickness becomes smaller than that of the flat part other than the contact hole.

Therefore, the filling of the contact hole 10 and the step coverage are low. In a conventional thin film forming apparatus using the magnetron type sputtering method, there is a thin film forming apparatus in which a collimator is arranged in front of the substrate 9 as shown in FIG. 14 in order to solve such a problem.

FIG. 14 is an enlarged view showing a part of a conventional sputtering type thin film forming apparatus in which a collimator is arranged in front of a film forming substrate.
For the same or equivalent members as described in 3,
The same reference numerals are given and detailed description is omitted. The method shown in FIG. 14 is called a collimation sputtering method, and in the figure, numeral 15 is a honeycomb-shaped porous plate. The porous plate 15 is formed in a honeycomb shape in a front view by a partition 16 parallel to the main surface of the substrate 9 and has a large number of vapor deposition particle passages 17 formed between the target 7 and the substrate 9. .

When this porous plate 15 is used, among the vapor deposition particles 14 that have entered the vapor deposition particle passage 17 from the target 7 side, those having a low straightness will adhere to the wall surface of the partition 16. Therefore, the vapor-deposited particles 1 having a high straightness property to the substrate 9
Since only 4 is attached, as shown in FIGS.
The hole filling and the step coverage are slightly higher than those of the device shown in FIG.

[0012]

However, even if the fine wiring film of the VLSI is formed by the collimation sputtering method as described above, if the aspect ratio of the contact hole 10 is 5 or more, the step coverage cannot be achieved. In addition, there is a problem that the wiring barrier film cannot be filled in the bottom portion. This will be described with reference to FIG.

FIG. 15 is a graph showing the aspect ratio dependence of the bottom coverage ratio (ratio of the film thickness deposited on the bottom of the contact to the surface film thickness of the substrate) by each film forming method. As shown in the figure, in the sputtering method, when the aspect ratio is 3 or more, the bottom coverage ratio is 10% or less, and the step coverage is limited. In the collimation sputtering method, when the aspect ratio is 4 or more, the bottom coverage rate is 10% or less. On the other hand, the ion beam method has a bottom coverage rate of about 50% even when the aspect ratio is 5.

Conventionally, a thin film forming apparatus capable of accommodating thin holes having an aspect ratio of 10 or more, or an aspect ratio of 5
There has been a demand for a thin film forming apparatus capable of obtaining a step coverage of about 100% in the above holes.

The present invention has been made to solve the above problems, and an object thereof is to obtain a thin film forming apparatus capable of filling a wiring film at the bottom of a fine contact hole having an extremely high aspect ratio. To aim.

[0016]

In the thin film forming apparatus according to the first aspect of the present invention, the evaporation source from which the film forming particles are emitted is configured such that the film forming particles are directionally ejected onto the film forming substrate. It is a thing.

In the thin film forming apparatus according to the second aspect of the present invention, the collimator disposed between the evaporation source and the film forming substrate has a cylindrical body having a surface extending in a direction orthogonal to the film forming surface of the substrate. Are arranged coaxially around the center of the particle flow, and a particle passage is provided between the cylinders.

A thin film forming apparatus according to a third aspect of the present invention comprises a collimator arranged between an evaporation source and a film forming substrate, and a plate member whose main surface is orthogonal to the film forming surface of the film forming substrate. A large number of particles are arranged radially around the center of the particle flow, and particle passages are provided between each plate material.

In the thin film forming apparatus according to the fourth aspect of the present invention, the partition for forming particle passages of the collimator arranged between the evaporation source and the film formation substrate is provided in the central portion of the particle flow more than in the outer portion. Is.

A thin film forming apparatus according to a fifth aspect of the present invention is the thin film forming apparatus according to any one of the second to fourth aspects, wherein the evaporation source directs the film forming particles toward the film forming substrate. It is configured to be ejected with.

[0021]

According to the first to third and fifth aspects, the film-forming particles fly along the direction substantially orthogonal to the film-forming surface of the film-forming substrate and reach the film-forming substrate.

According to the fourth aspect of the invention, since more partitions are present in a portion of the particle flow having a relatively high particle density, the distribution of the film-forming particles reaching the film-forming substrate is distributed over the entire area of the substrate. It becomes almost uniform over.

[0023]

【Example】

Example 1. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a configuration diagram showing a main part of a thin film forming apparatus according to the first invention. 11 to 1 in FIG.
For the same or equivalent members as described in 4,
The same reference numerals are given and detailed description is omitted.

In FIG. 1, reference numeral 21 is an evaporation source constituted by a molecular beam epitaxy (MBE) device.
22 is a crucible filled with a material to be vapor-deposited, and 23 is a filament for heating the crucible 22. This evaporation source 21
Is configured to eject vapor deposition particles 14 as film forming particles with directivity, and is supported and fixed to a vacuum chamber (not shown) with the ejection direction of the vapor deposition particles 14 facing the film forming substrate 9. Has been done. This vacuum chamber has a structure in which it is connected to an exhaust device (not shown) and is maintained at a predetermined degree of vacuum. Further, the substrate holder 5 is configured so that the substrate 9 can be rotated and heated. Further, the substrate 9 is, for example, a semiconductor wafer.

As the evaporation source 21, a molecular beam epitaxy (MBE) apparatus having an ionization mechanism, an electron beam (EB) type evaporation source, an electron beam (EB) type evaporation source having an ionization mechanism, an ion plating. apparatus,
It is possible to employ a device such as a cluster ion beam (ICB) device that ejects vapor deposition particles with directivity.

Next, the operation will be described. First, the evacuation device evacuates the vacuum chamber to a high vacuum, and maintains a predetermined degree of vacuum. Then, the substrate 9 placed in this vacuum chamber is rotated by the substrate holder 5 and heated to a predetermined temperature. Then, the filament 23 of the evaporation source 21 is energized to heat the crucible 22, and the vapor particles 1 are discharged from the evaporation source 21.
Eject 4.

The vapor particles 14 ejected from the evaporation source 21 travel in a high vacuum toward the substrate 9 and enter a collimator 15 located forward of the ejection direction. At this time, most of the vapor particles 14 go straight in a high vacuum, but some of them collide and scatter with residual gas particles, introduced gas particles or other vapor particles 14 in the vacuum chamber, and the straightness of the beam deteriorates. The vapor particles 14, which are scattered and have a traveling direction inclined with respect to the substrate 2, adhere to the wall surface of the partition 16 when entering the collimator 15, and are trapped in the wall surface. That is, collimator 1
The vapor particles 14 that pass through 5 and reach the substrate 9 have only uniform beam directivity.

Therefore, since the vapor particles 14 having the same beam directivity reach the substrate 9 and are formed into a film, an extremely thin hole can be filled. In addition,
It is also possible to form a compound thin film by introducing oxygen, a nitrogen gas or a gas containing oxygen and a nitrogen element by a gas introducing means (not shown) into the vacuum chamber during the film forming step and combining them with the vapor deposition particles 14. is there.

Example 2. The second invention will be described in detail with reference to FIG. FIG. 2 is a perspective view of a collimator used in the thin film forming apparatus of the second invention. In this embodiment, in FIG.
A case will be described in which the collimator of the thin film forming apparatus shown in 2 is replaced with the collimator shown in FIG.

In FIG. 2, the collimator 31 is formed by coaxially arranging cylindrical bodies 31a to 31e having different diameters. The inner peripheral surface and the outer peripheral surface of each of the cylindrical bodies 31a to 31e are formed parallel to the axial direction. In addition, the interval between the cylinders is substantially constant. 32
Is a connecting plate made of a thin plate that connects the cylindrical bodies. That is, a particle passage is formed between the hollow portion of the central cylindrical body 31a and each cylindrical body. The collimator 31 thus formed is attached to the vacuum chamber with the axial center part positioned at the center of the particle flow.

When a film is formed using this collimator 31, the evaporation source [molecular beam epitaxy (MB
E) device, molecular beam epitaxy (EMB) device with ionization mechanism, electron beam (EB) type evaporation source, electron beam (EB) evaporation source with ionization mechanism, ion plating device, cluster ion beam (ICB)
Highly straight beam from the device etc. is axisymmetric,
Since some particles are scattered outward from the central axis of the evaporation source, the concentric (axially symmetric) collimator 31 of this embodiment is used, and only the vapor deposition particles scattered outside the particle flow are collimated. It can be attached to 31 and trapped.

That is, the vapor deposition particles that go straight toward the substrate pass through the collimator 31. Therefore, not only the straightness of the beam is improved due to the structure of the evaporation source,
Since the collimator 31 traps the vapor particles going to the outside of the particle flow, and the directivity of the beam is further aligned, it is possible to embed even an extremely thin hole.

Further, when the collimator 31 of this embodiment is used, the vapor deposition particles attached to the collimator 31 are reduced, so that the replacement period of the collimator 31 can be extended.
In addition, dust due to film peeling from the collimator 31 is also reduced.

Example 3. Although the cylindrical body is used to form the collimator in the second embodiment, a cylindrical body having a quadrangular shape in front view may be used as shown in FIG. Figure 3 is the second
FIG. 9 is a front view showing another embodiment of the collimator used in the thin film forming apparatus of the invention of FIG. The collimator denoted by reference numeral 33 in the figure is a rectangular tube 33a having a square shape in a front view with different opening dimensions.
It is formed by arranging 33e coaxially. A particle passage is formed between the cylinders. The rectangular tubes are connected by a connecting plate 34 made of a thin plate. Even if formed in this way, the same effect as that of the second embodiment can be obtained.

Example 4. Moreover, as a collimator, FIG.
It is also possible to use an octagonal tubular body as shown in FIG. FIG. 4 is a perspective view showing another embodiment of the collimator used in the thin film forming apparatus of the second invention. Reference numeral 35 in FIG.
The collimator indicated by is formed by coaxially arranging cylindrical bodies 35a to 35d having a regular octagonal shape in a front view and having different opening sizes. And, the tops of the respective cylinders are the collimator 3
5 are connected by a connecting plate 36 made of a thin plate extending radially from the center.

When the collimator 35 thus formed is used in the thin film forming apparatus shown in FIG. 1, in addition to the vapor deposition particles scattered outside the beam of the particle stream, the collimator 35 also scatters along the circumferential direction of the beam. The deposited vapor deposition particles can also be attached and trapped. Therefore, the straightness of the beam is further improved. When a plurality of cylinders are coaxially arranged to form a collimator, the front shape of the cylinders (the number of corners, the position of the connecting plate, etc.) is not limited to the above embodiment, and may be changed as appropriate. be able to.

Example 5. The third invention will be described in detail with reference to FIG. FIG. 5 is a perspective view of a collimator used in the thin film forming apparatus of the third invention. In this embodiment, in FIG.
A case will be described in which the collimator of the thin film forming apparatus shown in is replaced with the collimator shown in FIG.

The collimator indicated by reference numeral 41 in FIG. 5 is formed by arranging a large number of partition plates 43 made of thin plates inside the cylindrical body 42. The partition plate 43 is formed so that its main surface is orthogonal to the film forming surface of the film forming substrate (not shown), and is extended radially from the center of the cylindrical body 42 and the extending end is a cylindrical body. It is connected to 42. In the collimator 41 thus formed, the space surrounded by the cylindrical body 42 and the partition plate 43 serves as a particle passage. The collimator 41 is attached to the vacuum chamber with the center of the cylindrical body 42 positioned at the center of the beam of particle flow.

Next, the operation will be described. The highly straight beam from the evaporation source of the thin film forming apparatus shown in FIG. 1 is axisymmetric, and some particles are scattered while spreading outward from the central axis of the evaporation source. Then, when the vapor deposition particles enter the collimator 41 shown in FIG. 5, only the vapor deposition particles scattered in the circumferential direction of the beam of the particle flow adhere to the partition plate 43 and are trapped thereby.

That is, the vapor deposition particles that go straight toward the substrate pass through the collimator 41. Therefore, not only the straightness of the beam is improved due to the structure of the evaporation source, but also the vapor particles traveling in the direction along the circumferential direction of the particle flow are trapped by the collimator 41 and the directivity of the beam is further aligned. , Embedding is possible even with extremely thin holes.

Example 6. When the partition plates are radially provided from the central portion of the beam to form the collimator as described above, a cylindrical body may be provided at the central portion as shown in FIG. FIG. 6 is a perspective view showing another embodiment of the collimator used in the thin film forming apparatus of the third invention. In the figure, the same or equivalent members as those described in FIG. 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the collimator indicated by reference numeral 44 in FIG. 6, cylindrical bodies 44a and 44b having different diameters are coaxially provided in the central portion. And, the hollow portion of the central cylindrical body 44a,
Particle paths are also formed in the space between the two cylinders.

When the collimator 44 thus constructed is used, in addition to the vapor deposition particles scattered in the circumferential direction of the beam of particle flow, the vapor deposition particles scattered outside the beam are also trapped. . Therefore, the straightness of the beam can be further improved.

Example 7. The thin film forming apparatus according to the fourth invention will be described in detail with reference to FIG. FIG. 7 is a perspective view of a collimator used in the thin film forming apparatus of the fourth invention. In this embodiment, a case where the collimator of the thin film forming apparatus shown in FIG. 1 is replaced with the collimator shown in FIG. 7 will be described.

The collimator indicated by reference numeral 51 in FIG. 7 is formed such that cylindrical bodies 51a to 51e having different diameters are coaxially arranged and the distance between adjacent cylindrical bodies becomes narrower toward the center. . Each cylindrical body 51a-5
The inner peripheral surface and the outer peripheral surface of 1e are formed parallel to the axial direction. Reference numeral 52 is a connecting plate made of a thin plate that connects the respective cylinders. That is, a particle passage is formed between the hollow portion of the central cylindrical body 51a and each cylindrical body.

The collimator 51 thus formed is attached to the vacuum chamber with its axial center positioned at the center of the particle flow. With this configuration, the collimator 51
Partition for forming particle passages (cylindrical bodies 51a to 51e
And the connecting plate 52) is arranged more in the central part of the beam of particle flow than in the outer part.

Next, the operation will be described. The highly straight beam from the evaporation source of the thin film forming apparatus shown in FIG. 1 is axially symmetric, and the vapor deposition particle density is higher toward the center. Therefore, the collimator 51 of this embodiment is arranged in the particle flow. As a result, the thickness of the thin film formed on the film formation substrate becomes substantially uniform over the entire area of the substrate. This is because the vapor deposition particles flowing in the central portion of the beam adhere to the partition arranged in a large amount in the portion and decrease, and the substantial vapor deposition particle density of the beam becomes substantially equal in the central portion and the outer peripheral portion. The collimator 51 improves the straightness of the beam as shown in FIG.
This is the same as the case of the embodiment shown in FIG.

Therefore, when the collimator 51 is constructed in this way, the directivity of the beam is further improved, and even a very thin hole can be embedded, and the film thickness becomes equal in the central portion and the outer portion of the substrate.

Example 8. Although the collimator is formed of a cylindrical body in the example shown in FIG. 7, it may be formed of a rectangular cylinder as shown in FIG. FIG. 8 is a front view showing another embodiment of the collimator used in the thin film forming apparatus of the fourth invention.

A collimator indicated by reference numeral 53 in FIG. 8 is a rectangular cylindrical body 53a to 53g having a square shape in a front view and having different opening dimensions.
Are arranged coaxially, and the closer they are to the center, the denser the arrangement. Reference numeral 54 is a connecting plate made of a thin plate for connecting the respective rectangular tubular bodies. That is, a particle passage is formed between the hollow portion of the central rectangular tubular body 53a and each of the rectangular tubular bodies. Even if the collimator 53 is configured in this way, the particle passage forming partition is arranged in the central portion of the beam of the particle flow more than in the outer portion,
The same effect as that of the seventh embodiment can be obtained.

Example 9. Further, the collimator used in the thin film forming apparatus of the fourth invention can be formed as shown in FIG. FIG. 9 is a front view showing another embodiment of the collimator used in the thin film forming apparatus of the fourth invention.

A collimator denoted by reference numeral 55 in the figure is a rectangular tubular body 55a to 55c having a square shape in a front view and having different opening dimensions.
Are arranged on the same axis, and a large number of rectangular tubular bodies 56 each having a smaller opening size are further arranged inside the central rectangular tubular body 55a. Reference numeral 57 is a connecting plate made of a thin plate.

Even if the collimator 55 is constructed as described above, the partition for forming particle passages is arranged in the central portion of the beam of the particle flow more than in the outer portion, and therefore the same effect as that of the seventh embodiment can be obtained.

Example 10. Further, the collimator used in the thin film forming apparatus of the fourth invention can be formed as shown in FIG. FIG. 10 is a perspective view showing another embodiment of the collimator used in the thin film forming apparatus of the fourth invention.

A collimator indicated by reference numeral 58 in the figure has a thick plate 59 and a circular hole 6 with a different opening diameter when viewed from the front.
A large number of 0 and 61 are formed. The hole 60 having the larger opening diameter is formed on the outer side of the flat plate 59, and the hole 61 having the smaller opening diameter is formed on the central part of the flat plate 59. That is, the inside of these holes 60, 61 serves as a particle passage, and the part of the flat plate 59 between the holes 60, 61 constitutes a partition for forming a particle passage.

Even if the collimator 58 is constructed as described above, the partition for forming particle passages is arranged more in the central portion of the beam of the particle stream than in the outer portion, so that the same effect as in the seventh embodiment can be obtained. In FIG. 10, the distance between the holes is widened so that the structure can be easily understood. actually,
In order to secure a large passage cross-sectional area, it is desirable that the portion that serves as a partition for forming particle passages be formed thinner than in FIG.

Further, as described in the first to tenth embodiments, the evaporation source 21 having directivity in the ejection direction of the vapor deposition particles and the collimators 15, 31, 33, 35, 4 are provided.
In the case of using the thin film forming apparatus using 1, 44, 51, 53, 55, 58, the aspect ratio is 7 and the bottom coverage rate is 80%, as shown by the collimation ion beam method in FIG. That's it. From this, it can be seen that even an extremely thin hole can be embedded.

Example 11. In each of the above-described embodiments, an example in which the collimator shown in FIGS. 2 to 10 is applied to the thin film forming apparatus shown in FIG. 1 has been described, but it should be used instead of the collimator of the thin film forming apparatus shown in FIG. You can also Even in this case, since the straightness of the beam can be further improved, the same effect as that of the above embodiment can be obtained.

[0059]

As described above, the thin film forming apparatus according to the first aspect of the present invention has a structure in which the film formation particles are directionally ejected from the evaporation source from which the film formation particles are emitted to the film formation substrate. In the thin film forming apparatus according to the second invention, the collimator arranged between the evaporation source and the film forming substrate has a surface extending in a direction orthogonal to the film forming surface of the substrate. A large number of cylinders are coaxially arranged around the center of the particle flow, and a particle passage is provided between the cylinders.
A thin film forming apparatus according to a third aspect of the present invention uses a collimator arranged between an evaporation source and a film-forming substrate, a plate member whose main surface is orthogonal to the film-forming surface of the film-forming substrate, for a particle flow. Formed by arranging a large number radially around the central portion and providing particle passages between the plate materials, the film-forming particles are formed along a direction substantially orthogonal to the film-forming surface of the film-forming substrate. It flies and reaches the film formation substrate.

Therefore, even with a fine contact hole having an extremely high aspect ratio, the wiring film can be filled in the bottom portion thereof.

In the thin film forming apparatus according to the fourth aspect of the present invention, since the particle passage forming partition of the collimator arranged between the evaporation source and the film formation substrate is provided in the central portion of the particle flow more than in the outer portion, Since more partitions are present in the part of the particle flow where the particle density is relatively high, the distribution of the film-forming particles reaching the film-forming substrate is substantially uniform over the entire area of the substrate.

Therefore, since the thin film formed on the film forming substrate is substantially uniform over the entire area of the substrate, a high quality thin film can be formed.

A thin film forming apparatus according to a fifth aspect of the present invention is the thin film forming apparatus according to any one of the second to fourth aspects, wherein the evaporation source directs the film forming particles toward the film forming substrate. Since it is configured such that the fine particles are jetted out, the straightness of the film-forming particles entering the collimator is improved, so that the fine contact holes can be filled in more reliably.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a main part of a thin film forming apparatus according to a first invention.

FIG. 2 is a perspective view of a collimator used in the thin film forming apparatus of the second invention.

FIG. 3 is a front view showing another embodiment of the collimator used in the thin film forming apparatus of the second invention.

FIG. 4 is a perspective view showing another embodiment of the collimator used in the thin film forming apparatus of the second invention.

FIG. 5 is a perspective view of a collimator used in the thin film forming apparatus of the third invention.

FIG. 6 is a perspective view showing another embodiment of the collimator used in the thin film forming apparatus of the third invention.

FIG. 7 is a perspective view of a collimator used in the thin film forming apparatus of the fourth invention.

FIG. 8 is a front view showing another embodiment of the collimator used in the thin film forming apparatus of the fourth invention.

FIG. 9 is a front view showing another embodiment of the collimator used in the thin film forming apparatus of the fourth invention.

FIG. 10 is a perspective view showing another embodiment of the collimator used in the thin film forming apparatus of the fourth invention.

FIG. 11 is a schematic configuration diagram schematically showing a conventional sputtering type thin film forming apparatus.

FIG. 12 is a configuration diagram showing a state where a thin film is formed by a conventional sputtering type thin film forming apparatus.

FIG. 13 is a cross-sectional view showing a state in which aluminum is deposited in a contact hole by a conventional sputtering type thin film forming apparatus.

FIG. 14 is an enlarged view showing a part of a conventional sputtering type thin film forming apparatus in which a collimator is arranged in front of a film forming substrate.

FIG. 15 is a graph showing the aspect ratio dependency of the bottom coverage ratio by each film forming method.

[Explanation of symbols]

 9 Deposition Substrate 14 Evaporated Particles 15 Collimator 21 Evaporation Source 31 Collimator 33 Collimator 35 Collimator 41 Collimator 44 Collimator 51 Collimator 53 Collimator 55 Collimator 58 Collimator

Claims (5)

[Claims] 1. A thin film forming apparatus, wherein film forming particles emitted from an evaporation source are passed through a collimator and flowed only in a direction substantially orthogonal to a film forming surface of a film forming substrate, wherein the evaporation source is used for film forming. A thin film forming apparatus characterized in that particles are ejected onto a film formation substrate with directivity. 2. A thin film forming apparatus, wherein film-forming particles emitted from an evaporation source are passed through a collimator and flowed only in a direction substantially orthogonal to a film-forming surface of a film-forming substrate. A large number of cylinders having a surface extending in a direction orthogonal to the film forming surface of the substrate are coaxially arranged around the center of the particle flow, and particle passages are provided between the cylinders. Characteristic thin film forming apparatus. 3. A thin film forming apparatus in which film-forming particles emitted from an evaporation source are passed through a collimator and flowed only in a direction substantially orthogonal to a film-forming surface of a film-forming substrate, the collimator having a main surface thereof. Is a thin film formation characterized in that a large number of plate materials that are orthogonal to the film formation surface of the film formation substrate are arranged radially around the center of the particle flow, and particle paths are provided between each plate material. apparatus. 4. A thin film forming apparatus for passing film-forming particles emitted from an evaporation source through a collimator and flowing only in a direction substantially orthogonal to a film-forming surface of a film-forming substrate. A thin film forming apparatus, characterized in that more partitions are provided in the central part of the particle stream than in the outer part. 5. The thin film forming apparatus according to any one of claims 2 to 4, wherein the evaporation source is configured to eject the film forming particles toward the film forming substrate with directivity. Thin film forming apparatus.