JPH07108816B2 - High-pressure phase boron nitride composite material - Google Patents

High-pressure phase boron nitride composite material

Info

Publication number
JPH07108816B2
JPH07108816B2 JP61239836A JP23983686A JPH07108816B2 JP H07108816 B2 JPH07108816 B2 JP H07108816B2 JP 61239836 A JP61239836 A JP 61239836A JP 23983686 A JP23983686 A JP 23983686A JP H07108816 B2 JPH07108816 B2 JP H07108816B2
Authority
JP
Japan
Prior art keywords
composite material
pressure phase
pressure
boron nitride
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61239836A
Other languages
Japanese (ja)
Other versions
JPS6395162A (en
Inventor
博之 中江
幸男 松波
昭史 小野寺
敏雄 平井
健 増本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Japan Metals and Chemical Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Japan Metals and Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd, Japan Metals and Chemical Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP61239836A priority Critical patent/JPH07108816B2/en
Publication of JPS6395162A publication Critical patent/JPS6395162A/en
Publication of JPH07108816B2 publication Critical patent/JPH07108816B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、機械工具材料、ヒートシンク材料、誘電体材
料、エンジニアリング材料等に適した高圧相窒化ホウ素
系複合材料に関する。
TECHNICAL FIELD The present invention relates to a high pressure phase boron nitride based composite material suitable for machine tool materials, heat sink materials, dielectric materials, engineering materials and the like.

[従来の技術] 立方晶窒化ホウ素(以下c−BNと略記)はダイヤモンド
に次ぐ硬度と熱伝導性をもち、耐熱性鉄系材料に対する
安定性の点ではダイヤモンドをしのぐ優れた材料であ
る。この優れた特徴を生かすべく、主として工具用材料
としてc−BN系の複合材料が提唱されている。
[Prior Art] Cubic boron nitride (hereinafter abbreviated as c-BN) has hardness and thermal conductivity second only to diamond, and is superior to diamond in terms of stability against heat-resistant iron-based materials. In order to make use of this excellent characteristic, a c-BN-based composite material has been mainly proposed as a material for tools.

例えば、特開昭56−26771号公報にはc−BN粉末とSi3N4
粉末を混合し、これを粉末状で、もしくは型押成型後、
超高温下で焼結して、c−BNを20〜50vol%含有し、残
部がSi3N4を主体としたものからなる鋳鉄切削工具用焼
結体の製造法が開示されている。また、例えば特開昭58
−130167号公報にも、c−BN40〜80vol%とSi3N4、ZrN
などの窒化物とその他不可不純物60〜20vol%とよりな
る粉末を混合し、これを30kb以上の圧力と1000℃以上の
温度で処理してc−BN焼結体を製造する方法が開示され
ている。
For example, JP-A-56-26771 discloses that c-BN powder and Si 3 N 4
Mix the powders, powder this, or after embossing,
Disclosed is a method for producing a sintered body for a cast iron cutting tool, which comprises sintering at ultra-high temperature, containing 20 to 50 vol% of c-BN, and the balance mainly consisting of Si 3 N 4 . Also, for example, Japanese Patent Laid-Open No.
No. 130167 also discloses that c-BN 40 to 80 vol% and Si 3 N 4 and ZrN
There is disclosed a method for producing a c-BN sintered body by mixing a powder of nitride such as 60% to 20% by volume with other impure impurities and treating the mixture at a pressure of 30 kb or more and a temperature of 1000 ° C. or more. There is.

[発明が解決しようとする問題点] このようにc−BN粉末とSi3N4など他種化合物の粉末を
混合してその超高圧高温処理によって焼結体を得る方法
では、不純物の含有混入が多く、特に、粉末粒子の界面
に不純物元素が存在するため、界面部の接合に問題が生
じ、複合効果が必ずしも十分に発揮されないきらいがあ
った。そして往々にしてこれらの粒子接合部において微
小なクラックが発生し、材料特性を低下させる問題があ
った。
[Problems to be Solved by the Invention] As described above, in a method of obtaining a sintered body by mixing c-BN powder and powders of other compounds such as Si 3 N 4 and subjecting them to ultrahigh pressure and high temperature treatment, inclusion of impurities In particular, since the impurity element is present at the interface of the powder particles, there is a problem in joining at the interface portion, and the compound effect is not always sufficiently exhibited. And, there is a problem that minute cracks are often generated in these particle-bonded portions and the material properties are deteriorated.

[問題点を解決するための手段] 本発明は、従来とは全く異なる高圧相BN系の複合材料を
提供するもので化学気相析出法で作製した、常圧相窒化
ホウ素を含む複合材料を、高圧処理して5〜52wt%の高
圧相窒化ホウ素を含有する複合材料とした高圧相窒化ホ
ウ素系複合材料である。
[Means for Solving Problems] The present invention provides a composite material of a high-pressure phase BN system which is completely different from the conventional one, and a composite material containing an atmospheric pressure phase boron nitride prepared by a chemical vapor deposition method. A high-pressure phase boron nitride-based composite material which is a high-pressure treated composite material containing 5-52 wt% high-pressure phase boron nitride.

一般にセラミックス特にファインセラミックスと称され
るものの性質は極めて製造法に敏感であることは周知で
ある。これは電磁気的機能材料としての性質においては
勿論のこと、所謂構造用材料としての性質においてもそ
うである。どのような方法で合成し、かつ加工成形した
ものであるかによって、特徴、性能上において大きな差
異が生じるのである。これは不純物(極微量まで含め
て)、粒径、表面状態などにファインセラミックスの構
造や性質が極めて敏感に影響を受けるからである。
It is well known that the properties of ceramics, especially fine ceramics, are extremely sensitive to the manufacturing method. This is true not only in the property as an electromagnetically functional material, but also in the property as a so-called structural material. A large difference occurs in characteristics and performance depending on the method of synthesizing and processing. This is because the structure and properties of fine ceramics are extremely sensitively affected by impurities (including trace amounts), particle size, surface state, and the like.

化学気相(CVD)法により合成されたセラミックスは極
めて高純度である。したがって、本発明に用いるCVD法
により合成した常圧相BNを含む複合材料は当然のことな
がら純度の面で極めて優れている。さらに、CVD法によ
り合成したB−N系複合セラミックスは、その構造にお
いて極めて特徴がある。例えば、VD法ではナノメーター
オーダーのTiN粒子が常圧相BN中に分散した構造のBN/
TiN複合材料を合成できる。また、数十ナノメーター
オーダーのSi3N4粒子が分散したBN/Si3N4複合材料を作
り分けることができる。
Ceramics synthesized by the chemical vapor deposition (CVD) method have extremely high purity. Therefore, the composite material containing the atmospheric phase BN synthesized by the CVD method used in the present invention is, of course, extremely excellent in terms of purity. Further, the BN composite ceramics synthesized by the CVD method is extremely characteristic in its structure. For example, in the VD method, nanometer-order TiN particles are dispersed in normal pressure BN / BN /
TiN composite materials can be synthesized. Also, dozens of nanometers
BN / Si 3 N 4 composite materials in which order-made Si 3 N 4 particles are dispersed can be produced separately.

本発明において常圧相BNとは、非晶質BN、乱層構造BN
(t−BN)、六方晶BN(h−BN)及び菱面体晶BN(γ−
BN)を意味する。
Atmospheric pressure phase BN in the present invention, amorphous BN, turbostratic structure BN
(T-BN), hexagonal BN (h-BN) and rhombohedral BN (γ-
BN) is meant.

本発明材料はこのように優れた特徴を有するCVD法によ
り得られた、常圧相BNからなる複合材料を超高圧処理し
て、高圧相BNを含む超高硬度材料に相転換せしめること
によって実現されたものである。
The material of the present invention is realized by subjecting the composite material composed of the normal pressure phase BN obtained by the CVD method having such excellent characteristics to ultrahigh pressure treatment and phase conversion into an ultrahigh hardness material containing the high pressure phase BN. It was done.

このものは従来のC−BN粉末とSi3N4などの粉末の混合
体を高圧焼結することによって得たものとは全く異なっ
ている。例えば高圧相BNと結晶質Si3N4とからなる複合
材料の場合、両者の界面の密着性が極めて優れているこ
とに加えて、特徴ある微細構造を呈しているのである。
This is completely different from the one obtained by high-pressure sintering of a conventional mixture of C-BN powder and powder such as Si 3 N 4 . For example, in the case of a composite material composed of high-pressure phase BN and crystalline Si 3 N 4 , in addition to having extremely excellent adhesion at the interface between the two, it has a characteristic microstructure.

本発明において高圧相BNを含む複合材料とは、例えば、
次のごときものである。すなわち、(1)高圧相BNとSi
3N4、TiN、AlN、ZrNなどの窒化物セラミックスからなる
複合材料; (2)高圧相BNとSiC、TiC、B4Cなどの炭化物セラミッ
クスからなる複合材料; (3)高圧相BNとTiB2、ZrBなどのホウ化物セラミック
スからなる複合材料。
The composite material containing the high-pressure phase BN in the present invention, for example,
It is as follows. That is, (1) high pressure phase BN and Si
3 N 4 , composite material composed of TiN, AlN, ZrN and other nitride ceramics; (2) Composite material composed of high pressure phase BN and carbide ceramics such as SiC, TiC, B 4 C; (3) High pressure phase BN and TiB 2 , a composite material consisting of boride ceramics such as ZrB.

高圧相BNとはc−BNおよびw−BN(ウルツ鉱型窒化ホウ
素)を意味し、c−BNが好ましいものである。
The high pressure phase BN means c-BN and w-BN (wurtzite boron nitride), with c-BN being preferred.

本発明の材料中における高圧相BNの含有割合は5〜52wt
%の範囲が、高圧相窒化ホウ素の性質と他の窒化物セラ
ミックス等の性質の相乗効果を発揮する上で適切であ
る。
The content ratio of the high-pressure phase BN in the material of the present invention is 5 to 52 wt.
The range of% is appropriate for exerting the synergistic effect of the properties of the high-pressure phase boron nitride and the properties of other nitride ceramics and the like.

本発明の材料においては、高圧相BNと例えば結晶質Si3N
4相とは極めて多種多様な共存状態をとり得るものであ
る。
In the material of the present invention, high-pressure phase BN and crystalline Si 3 N
The four phases are those that can take an extremely wide variety of coexistence states.

例えば図に示したようなものである。この図は本発明材
料の切断面の研摩面の電子顕微鏡写真観察で得た高圧相
BNの形態を示す模式図である。柱状もしくは繊維状形態
(第1図)、カギ型やコの字型の形態(第2図)、柱状
物が樹枝状につながっている形態(第3図)、ドーナツ
型もしくは中空球の形態(第4図)、BN相自体が更に網
目状をしている形態(第5図)、柱状BNの内部に異種物
質を内包する形態(第6図)、ナノメーターもしくは数
十ナノメーター オーダーで均一分散している形態(第
7図)などの形態がある。
For example, it is as shown in the figure. This figure shows the high-pressure phase obtained by observing the polished surface of the cut surface of the material of the present invention with an electron micrograph.
It is a schematic diagram which shows the form of BN. Columnar or fibrous morphology (Fig. 1), hook-shaped or U-shaped morphology (Fig. 2), dendritic columnar morphology (Fig. 3), donut-shaped or hollow sphere morphology ( (Fig. 4), the BN phase itself is more mesh-like (Fig. 5), the form in which foreign substances are included in the columnar BN (Fig. 6), uniform in the order of nanometers or tens of nanometers There are forms such as the dispersed form (FIG. 7).

このように本発明材料は極めて特徴ある微細構造を有す
るc−BN系複合材料である。柱状、樹枝状、網目状に存
在するc−BNが材料の硬度や靱性を効果的に高めること
になる。また、このような構造であるため、熱的、電気
的、機械的、化学的特性において優れた複合効果が発揮
される。
As described above, the material of the present invention is a c-BN composite material having an extremely characteristic microstructure. The columnar, dendritic, and mesh-like c-BN effectively enhances the hardness and toughness of the material. Further, due to such a structure, an excellent composite effect is exhibited in thermal, electrical, mechanical and chemical properties.

このような極めて特徴ある微細構造を有するc−BN系複
合材料は、粉末を出発原料とする従来方法では全く実現
しなかったものである。
Such a c-BN-based composite material having an extremely characteristic fine structure has never been realized by the conventional method using powder as a starting material.

本発明において、常圧相BNを含む複合材料はCVD法で合
成する。BN/Si3N4複合材料は、例えばBCl3−SiCl4−NH3
−H2ガス系のCVDによる。BN/TiN、BN/AlNは、例えばBCl
3−TiCl−NH3−H2、BCl3−AlCl3−NH3−H2による。塩化
物にかえて水素化物やフッ化物を用いること、NH3にか
えてN2などの含窒素化物、H2にかえてArなどを用いるこ
とは必要に応じて選択すべきことである。炭化物の場合
にはメタンなどの炭化水素、CCl4、CO2などを炭素源ガ
スとして用いる。
In the present invention, the composite material containing the normal pressure phase BN is synthesized by the CVD method. BN / Si 3 N 4 composite material is, for example, BCl 3 --SiCl 4 --NH 3
According to CVD of -H 2 gas system. BN / TiN and BN / AlN are, for example, BCl
3 -TiCl-NH 3 -H 2, by BCl 3 -AlCl 3 -NH 3 -H 2 . The use of hydride or fluoride instead of chloride, the use of nitrogen-containing compounds such as N 2 instead of NH 3 , and the use of Ar etc. instead of H 2 should be selected as necessary. In the case of carbide, hydrocarbon such as methane, CCl 4 , CO 2 etc. are used as the carbon source gas.

このように、CVD法で作製した常圧相BNを含む複合材料
を高圧処理して高圧相BNに相転換させることにより本発
明材料が実現する。
In this way, the material of the present invention is realized by subjecting the composite material containing the atmospheric pressure phase BN produced by the CVD method to high pressure treatment and phase conversion into the high pressure phase BN.

高圧処理手段としては静的高圧処理と動的高圧処理とが
ある。前者は例えば、八面体アンピル装置を用いて800
℃以上、6GPa以上の条件のもとで、好ましい具体的条件
の一例としては7GPaの圧力下、1800℃〜2200℃の温度で
5〜30分間処理する方法である。後者は爆発を用いて材
料に衝撃を付加する方法である。
The high-pressure treatment means includes static high-pressure treatment and dynamic high-pressure treatment. The former is, for example, 800
An example of a preferable specific condition under the condition of ℃ or more and 6 GPa or more is a method of treating at a temperature of 1800 ° C. to 2200 ° C. for 5 to 30 minutes under a pressure of 7 GPa. The latter is a method of applying an impact to a material using an explosion.

静的高圧処理ではc−BN系材料となる。衝撃加圧処理の
場合、常圧相BNがh−BNの場合にはw−BNとなり、γ−
BNの場合c−BNとなる。
In static high-pressure treatment, it becomes a c-BN type material. In the case of impact pressure treatment, when the normal pressure phase BN is h-BN, it becomes w-BN, and γ-
In the case of BN, it becomes c-BN.

得られたc−BN系複合材料の微細構造を制御しやすい点
から静的高圧処理が好ましい。この場合、非晶質もしく
は乱層構造BNと非晶質窒化物(非晶質Si3N4など)とか
らなる複合材料を出発原料とするとき、得られるc−BN
系複合材料中のc−BNの析出形態を制御しやすいので一
層好ましい。
The static high pressure treatment is preferable from the viewpoint of easily controlling the fine structure of the obtained c-BN composite material. In this case, when a composite material consisting of amorphous or turbostratic BN and amorphous nitride (amorphous Si 3 N 4 etc.) is used as a starting material, c-BN obtained is obtained.
It is more preferable because it is easy to control the precipitation morphology of c-BN in the composite material.

[実施例] 次に実施例によって本発明を説明する。EXAMPLES Next, the present invention will be described with reference to examples.

実施例1、2 BCl3−SiCl4−NH3−H2ガス系のCVD法によりBN/Si3N4
合セラミックスを作製した。赤外吸収スペクトル及び化
学分析から、BNとSi3N4からなっていることを確認し
た。Si3N4含有割合は54.1wt%であった。X線回折の結
果から非晶質体であった。Si3N4の結晶は全く認められ
なかった。また無色透明の板状体で、その密度は2.08g/
cm3であった。この非晶質試料を八面体高圧装置を用い
て、圧力7GPa、温度1800℃で10分間高圧処理した(実施
例1)。また、圧力7GPa、温度2200℃でも10分間高圧処
理した(実施例2)。
To prepare a BN / Si 3 N 4 composite ceramic by Examples 1,2 BCl 3 -SiCl 4 -NH 3 -H 2 gas system CVD method. From infrared absorption spectrum and chemical analysis, it was confirmed that it consisted of BN and Si 3 N 4 . The Si 3 N 4 content was 54.1 wt%. From the result of X-ray diffraction, the substance was amorphous. No crystals of Si 3 N 4 were observed. In addition, it is a colorless transparent plate-like body with a density of 2.08 g /
It was cm 3 . This amorphous sample was subjected to a high pressure treatment at a pressure of 7 GPa and a temperature of 1800 ° C. for 10 minutes using an octahedral high pressure apparatus (Example 1). Further, high pressure treatment was carried out for 10 minutes even at a pressure of 7 GPa and a temperature of 2200 ° C. (Example 2).

このようにして得られた試料は焼結体であった。これを
X線回折測定したところ、実施例1および実施例2とも
にc−BNとβ−Si3N4の回折線のみが認められた。ま
た、破面を研摩して高倍率電顕観察したところ、c−BN
の分散構造を判別することができた。実施例1では第5
図の構造が認められた。粗大粒状体の大きさは約1μm
であり、この内部はさらに細かく網状化していた。
The sample thus obtained was a sintered body. When this was subjected to X-ray diffraction measurement, only the diffraction lines of c-BN and β-Si 3 N 4 were observed in both Example 1 and Example 2. The fractured surface was polished and observed under a high-power electron microscope.
It was possible to determine the distribution structure of. The fifth in the first embodiment
The structure of the figure was recognized. The size of coarse particles is about 1 μm
And the inside was more finely reticulated.

一方、実施例2では第1〜4図および第6、7図の構造
が認められた。c−BN相の柱状部分の太さは約0.1μm
であった。実施例1のマイクロビッカース硬度は4000kg
/mm2、実施例2のそれは4700kg/mm2であった。荷重500g
での圧こん周辺を観察したが、クラックの存在は認めら
れなかった。また、c−BN相とSi3N4の界面にもクラッ
クは認められなかった。
On the other hand, in Example 2, the structures shown in FIGS. 1 to 4 and FIGS. 6 and 7 were recognized. Thickness of columnar part of c-BN phase is about 0.1 μm
Met. The micro Vickers hardness of Example 1 is 4000 kg
/ mm 2 , that of Example 2 was 4700 kg / mm 2 . Load 500g
The presence of cracks was not observed when the area around the indentation was observed. Also, no crack was observed at the interface between the c-BN phase and Si 3 N 4 .

[発明の効果] 高圧相BN特にc−BNはダイヤモンドに次ぐ超硬材料であ
り、熱伝導性、化学的安定性に優れている。本発明の高
圧相BN系複合材料はこれらの特徴を生かしつつ、窒化物
セラミックスや炭化物セラミックスなどとの複合化によ
り、それらセラミックスの諸特性を相乗的に付加した新
材料である。
[Effects of the Invention] The high-pressure phase BN, especially c-BN, is a superhard material second only to diamond, and has excellent thermal conductivity and chemical stability. The high-pressure BN-based composite material of the present invention is a new material in which various characteristics of the ceramics are synergistically added by combining them with nitride ceramics and carbide ceramics while making the most of these characteristics.

かかる新材料は高硬度、高じん性の機械工具材料、ヒー
トシンク材料、誘電体材料、耐摩耗性に優れたエンジニ
アリング材料として産業上の利用性は極めて高いもので
ある。
The new material has extremely high industrial applicability as a mechanical tool material having high hardness and high toughness, a heat sink material, a dielectric material, and an engineering material having excellent wear resistance.

【図面の簡単な説明】[Brief description of drawings]

第1〜7図は本発明材料の微細組織の模式図である。 1…高圧相BN 2…窒化物、炭化物、ホウ化物などの相。 1 to 7 are schematic views of the microstructure of the material of the present invention. 1 ... High-pressure phase BN 2 ... Phase of nitride, carbide, boride, etc.

───────────────────────────────────────────────────── フロントページの続き (71)出願人 999999999 平井 敏雄 宮城県泉市高森3−4−91 (71)出願人 999999999 増本 健 宮城県仙台市上杉3丁目8−22 (72)発明者 中江 博之 神奈川県川崎市麻生区上麻生1丁目14番7 号 (72)発明者 松波 幸男 神奈川県横浜市旭区二俣川1丁目67番地の 4 日本重化学工業株式会社二俣川アパー ト202 (72)発明者 小野寺 昭史 京都府京都市山科区日ノ岡夷谷町17−12 (72)発明者 平井 敏雄 宮城県泉市高森3−4−91 (72)発明者 増本 健 宮城県仙台市上杉3丁目8−22 (56)参考文献 特開 昭62−108718(JP,A) 特開 昭62−108712(JP,A) 特開 昭59−207811(JP,A) 特開 昭60−204674(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (71) Applicant 999999999 Toshio Hirai 3-4-91 Takamori, Izumi City, Miyagi Prefecture (71) Applicant 999999999 Ken Ken Masumoto 3-8-22, Uesugi, Sendai City, Miyagi Prefecture Inventor Hiroyuki Nakae 1-14-7 Kamioo, Aso-ku, Kawasaki-shi, Kanagawa Prefecture (72) Inventor Yukio Matsunami 4-67, 1-67, Futamatagawa, Asahi-ku, Yokohama-shi, Kanagawa Nihon Kagaku Kogyo Co., Ltd. 202 (72) Inventor, Akifumi Onodera Kyoto 17-12 Hinooka-Isutani-cho, Yamashina-ku, Kyoto (72) Inventor Toshio Hirai 3-4-91 Takamori, Izumi-shi, Miyagi Prefecture (72) Ken Ken Masumoto 3-8-22, Uesugi, Sendai-shi, Miyagi (56) References Special Kai 62-108718 (JP, A) JP 62-108712 (JP, A) JP 59-207811 (JP, A) JP 60-204674 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】化学気相析出法で作製した、常圧相窒化ホ
ウ素を含む複合材料を、高圧処理して5〜52wt%の高圧
相窒化ホウ素を含有する複合材料とした高圧相窒化ホウ
素系複合材料。
1. A high-pressure phase boron nitride-based composite material produced by a chemical vapor deposition method and containing a normal-pressure phase boron nitride, which is subjected to high-pressure treatment to obtain a composite material containing 5 to 52 wt% of high-pressure phase boron nitride. Composite material.
JP61239836A 1986-10-08 1986-10-08 High-pressure phase boron nitride composite material Expired - Fee Related JPH07108816B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61239836A JPH07108816B2 (en) 1986-10-08 1986-10-08 High-pressure phase boron nitride composite material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61239836A JPH07108816B2 (en) 1986-10-08 1986-10-08 High-pressure phase boron nitride composite material

Publications (2)

Publication Number Publication Date
JPS6395162A JPS6395162A (en) 1988-04-26
JPH07108816B2 true JPH07108816B2 (en) 1995-11-22

Family

ID=17050581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61239836A Expired - Fee Related JPH07108816B2 (en) 1986-10-08 1986-10-08 High-pressure phase boron nitride composite material

Country Status (1)

Country Link
JP (1) JPH07108816B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9389047B2 (en) * 2013-04-26 2016-07-12 E I Du Pont De Nemours And Company Ballistic resistant armor article

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247927A (en) * 1984-05-23 1985-12-07 Toshiba Corp Formation of pattern
JPS60247934A (en) * 1984-05-23 1985-12-07 Hitachi Ltd Heat treatment device
JPS62108718A (en) * 1985-11-07 1987-05-20 Denki Kagaku Kogyo Kk Production of sintered body of cubic boron nitride

Also Published As

Publication number Publication date
JPS6395162A (en) 1988-04-26

Similar Documents

Publication Publication Date Title
US5106392A (en) Multigrain abrasive particles
Vel et al. Cubic boron nitride: synthesis, physicochemical properties and applications
Herrmann et al. Diamond-ceramics composites—New materials for a wide range of challenging applications
CA2077825A1 (en) Thermally stable dense electrically conductive diamond compacts
Sumiya Novel development of high-pressure synthetic diamonds “Ultra-hard Nano-polycrystalline Diamonds”
EP0974566A1 (en) Cubic boron nitride sintered body
WO2012089565A1 (en) High density polycrystalline superhard material
US7348286B2 (en) Ceramic composite material and method of its manufacture
US20150027065A1 (en) Diamond composite and a method of making a diamond composite
JP2000044347A (en) Cbn sintered compact
JP2949863B2 (en) High toughness polycrystalline diamond and method for producing the same
RU2413699C2 (en) Superhard material
JPH07108816B2 (en) High-pressure phase boron nitride composite material
Kikuchi et al. Characteristics of thin film growth in the synthesis of diamond by chemical vapour deposition and application of the thin film synthesis technology for tools
Ohashi et al. Some properties and cutting performance of polycrystalline cubic boron nitride with no additives
AU717494B2 (en) Low compressibility carbon nitrides
JP4110338B2 (en) Cubic boron nitride sintered body
JP3397849B2 (en) Diamond coated cemented carbide tool
Shul’zhenko et al. New Diamond-Based Superhard Materials. Production and Properties. Review
US6461990B1 (en) Cubic boron nitride composite particle
JP4110339B2 (en) Cubic boron nitride sintered body
JP2001019411A5 (en)
JPH10218666A (en) High-pressure phase type boron nitride-based sintered compact
JPH08151297A (en) Production of diamond
JP2013028494A (en) Graphite and method for producing the same

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees