JPH07103466B2 - Ion source device and method for producing continuous vapor deposition medium - Google Patents

Description

TECHNICAL FIELD The present invention relates to an ion source device for generating ions and a method for manufacturing a continuous vapor deposition medium.

Conventional Technology Conventionally, for example, in a continuous vapor deposition apparatus for tape substrates,
The tape substrate is irradiated with ions before the predetermined substance is deposited on the tape substrate, and a neutralizer filament is provided in front of the ion source device for irradiating the ions. This neutralizer filament is for neutralizing the charge of ions, but it is floated from the ground or a positive voltage is applied in order to feed back with the substrate holder current or the emission current.

However, since the potential of the neutralizer for neutralizing the positive charge is positively biased even while floating from the ground, the floating potential in the vacuum chainer is also biased positively. In particular, when the target is an insulator, its surface is unstable and positively charged, and the etching rate fluctuates, or when the substrate is an insulator and runs in a long vacuum, it is charged during running. Therefore, there is a problem that wrinkles are generated at the same time as running instability.

It is an object of the present invention to provide an ion source device and a continuous vapor deposition medium manufacturing method that solve the conventional problems described above.

Means for Solving the Problems According to the present invention of claim 1, in an ion source device including a neutralizer filament, one terminal of the neutralizer filament is grounded and a negative voltage is applied to the other terminal. Is an ion source device.

Further, the present invention according to claim 4 is a continuous vapor deposition medium manufacturing method for continuously manufacturing a vapor deposition medium, wherein the base film is subjected to an ion irradiation treatment in advance before vapor deposition using the ion source device according to any one of claims 1 to 3. This is a method for producing a continuous vapor deposition medium.

Action In the present invention, since the neutralizer potential is negative, it is possible to freely change the floating potential in the vacuum chain bar from positive to negative. Therefore, it is possible to cancel the positive charge even in the insulator target or the substrate.

Embodiments Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows an ion source device according to an embodiment of the present invention.

Reference numeral 1 is an ion source for generating ions, 2 is a neutralizer filament, 3 is a substrate on which ions are irradiated, and 4 is a power source. As shown in the figure, one terminal of the neutralizer filament 2 is grounded and a negative electric thickness is applied to the other terminal by the power supply 4.

As a result of surely making the potential of the neutralizer filament 2 negative, even if the opposing substrate 3 is an insulating material, the charge generated on the surface of the neutralizing filament 2 can be sufficiently removed and the original function of the neutralizer 2 can be fulfilled. become able to do. In particular, the etching rate remarkably appeared, and in the case of the insulating material substrate, the variation of 20 to 30% was observed in the conventional method, whereas in the example of the present invention, the variation range of less than 10% could be reached.

In a large-diameter ion source device of 8 inches or more, the length of the neutralizer filament was long, and the potential difference that had to be applied to both ends of the neutralizer filament tended to be large. When the terminal voltage exceeds -50V on the negative side, a negative region appears on the space potential, which negatively charges the substrate. That is, it is desirable that the negative voltage is -50 V or higher and the ground potential or lower.

Therefore, in a large-diameter ion source, it is particularly effective to use a plurality of neutralizers in order to shorten the neutralizer filament length and lower the terminal voltage from the negative side to the ground side. FIG. 2 is a schematic front view of the ion injection port 11 of the ion source 1. As shown in the figure, a neutralizer filament group is arranged at the ion injection port 11 of the ion source 1. Instead of stretching the filament 2 long in the diameter direction of the ion source 1, a plurality of short filaments 2 are installed around the ion source 1. However, at that time, a part of the filament 2 must be installed so as to be in the ion flux. This is because if there is a filament 2 that completely protrudes from the ion flux, the space potential at that portion may be greatly negative and may negatively charge the inside of the vacuum chain bar.

FIG. 3 is a schematic front view of the flat large ion source of the present invention.

Reference numeral 11 is an ion emission port of the ion source, and 2 is a neutralizer filament. By stretching the neutralizer filament in the short axis direction, it is possible to pass the vicinity of the center of the ion ejection port 11 at the shortest distance. In this case, the number of neutralizer filaments 2 is one in the figure, but a method having a plurality of neutralizer filaments 2 enables more stable ion source operation.

FIG. 4 is a schematic configuration diagram of another large-sized ion source of the present invention. Reference numeral 2 is a neutralizer filament, 20 is a probe, 30 is a field through which separates the vacuum portion from the atmosphere to pass wiring, and 40 is a neutralizer control board. The probe 20 is electrically floating from the ground, and the controller board 40 adjusts the current flowing to the neutralizer filament 1 so that the probe potential is near the ground during the operation of the ion 1. That is, the neutralizer current is increased when the probe potential is positively biased, and is reversed when the probe potential is negative. Conventionally, the substrate or target holder current was adjusted to 0, that is, the ion current and the electron current were made equal, but if the substrate or target itself is made of an insulator, the holder current hardly flows and control is performed. It may be impossible to charge it. By using the power source of the present invention, it is possible to guarantee a more stable ion source operation even in an insulator target without charging the target.

FIG. 5 is a schematic cross-sectional view of an apparatus used in the method for producing a continuous vapor deposition medium using the large-sized ion source of the present invention. 51 is a long tape substrate, usually made of an insulator. 52 is a vapor deposition source, 53 is a rotary can for vapor deposition, 54 is an unwinding and winding bobbin, and 1 is the ion source. While the long substrate 1 is unwound from the unwinding bobbin 4 and runs along the cylindrical side surface of the rotary can 53, the metal vapor evaporated from the evaporation source 52 is deposited on the substrate 51. In the present invention, before the vapor deposition, the substrate 51 is previously subjected to the ion irradiation treatment using the ion source 1 of the present invention to improve the performance of the vapor deposition medium 51.

When the conventional large-sized ion source, especially the neutralizer one terminal is not grounded, the floating potential becomes unstable even in the beam region, the substrate 51 is charged, and it becomes an obstacle to stable traveling of the substrate, and wrinkles are likely to occur. Further, since the large ion source 1 is used, the length of the neutralizer filament is increased, the applied voltage between both terminals is increased, and especially the floating potential outside the beam region tends to be increased. In other words, in the figure, while the tape is running from the unwinding to the place where it receives ion irradiation, the thermoelectrons emitted from the neutralizer are negatively charged and the running instability and wrinkles occur until the ion irradiation floats. In the present invention, such a problem, which has occurred, is solved by using the ion source 1.

EFFECTS OF THE INVENTION As described above, according to the present invention, by setting the neutralizer potential to be negative, the potential in the chain bar can be made close to the ground potential and stable ion irradiation can be performed without being charged even if an insulating substrate is used. It will be possible.

Further, by producing a continuous vapor deposition medium using the ion source of the present invention, it is possible to improve the running property and the wrinkle occurrence rate of the vapor deposition medium.

[Brief description of drawings]

FIG. 1 is a schematic side view showing an embodiment of the ion source of the present invention, FIG. 2 is a front view showing another embodiment of the ion source of the present invention, and FIG. 3 is an ion of the present invention. 4 is a front view showing another embodiment of the ion source, FIG. 4 is a circuit diagram of another embodiment of the ion source of the present invention, and FIG. 5 shows a method for producing a continuous vapor deposition medium of one embodiment of the present invention. 1 is a schematic sectional view of a manufacturing apparatus for 1 ... Ion source, 2 ... Neutralizer filament, 3 ... Substrate, 4 ... Power supply, 11 ... Ion injection port, 40
...... Neutralizer control board, 51 …… Long tape board, 52 …… Deposition source, 53 …… Rotation can for evaporation,
54 ... Unwinding and winding bobbin.

Claims (4)

[Claims] 1. An ion source device comprising a neutralizer filament, wherein one terminal of the neutralizer filament is grounded and a negative voltage is applied to the other terminal. 2. The ion source device according to claim 1, wherein the negative voltage is not less than −50 V and not more than ground potential. 3. An ion source device provided with a neutralizer filament, wherein the current of the neutralizer filament is controlled so that the floating potential in the ion flux is near ground. 4. A continuous vapor deposition medium manufacturing method for continuously producing a vapor deposition medium, wherein the base film is subjected to an ion irradiation treatment in advance before vapor deposition using the ion source apparatus according to any one of claims 1 to 3. A method for producing a continuous vapor deposition medium.