JPH07102378A - High frequency discharging reactor - Google Patents

Abstract

PURPOSE:To attain the high speed and high precision of treatment by utilizing plasma of low pressure and high density in a high frequency discharging reactor and to facilitate the maintenance of the reactor. CONSTITUTION:This reactor is provided with an evacuating mechanism 5, high frequency power supplying mechanisms 10, 11 and 12, a plasma generating chamber 1 for introducing high frequency electric power into a space evacuated by the evacuating mechanism by the high frequency power supplying mechanisms to discharge a prescribed gas and generating plasma and a treating chamber 2 for introducing the plasma generated in the plasma generating chamber and treating the surface of a substrate 4 on a substrate holding mechanism 3, magnetic circuits 22 for generating plural cusp magnetic fields on the inside space of the treating chamber are set around the treating chamber, and the inside of the wall part of the treating chamber is provided with cylindrical inside wall members 8 and 9 connecting to the plasma in such a manner that they are rotatably supported, and a rotation driving device 13 rotating the inside wall members is provided. Moreover, magnetic circuits generating plural cusp magnetic fields on the inside space of the treating chamber 2 are provided around the treating chamber in such a manner that they are rotatably supported, and a rotation driving device rotating the magnetic circuits 22 is provided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency discharge reactor, and more particularly to a surface treatment of a substrate to be processed by using plasma generated by high frequency discharge. The present invention relates to a high-frequency discharge reaction device used in a device for performing.

[0002]

2. Description of the Related Art In etching, which is one of the steps for manufacturing a semiconductor device, a mixed gas containing a gas containing halogen as a main component is converted into plasma, and various kinds of active species generated by the discharge (for example, atomic chlorine, A dry etching technique is generally used in which atomic fluorine, a fluorocarbon compound, or the like) is guided to the surface of the substrate to be processed, reacted with the thin film on the surface, and removed. Electrodeless discharge using a high frequency wave or a microwave as an energy source is often used as a means for converting gas into plasma. Among the means using electrodeless discharge, a gas of relatively low pressure (1 to 10 mTorr) is caused to flow in a discharge tube made of a dielectric material, and high frequency power is supplied to the inside of the discharge tube by an antenna installed around the discharge tube. A dry etching apparatus of a type in which a gas is supplied and made into plasma by an interaction with a magnetic field generated in a discharge tube has been put into practical use. Further, as a typical example of a dry etching apparatus that uses low-pressure and high-density plasma as compared with the conventional apparatus, a dry etching apparatus that uses so-called helicon wave discharge is known.

FIG. 6 shows an example of a conventional structure of a dry etching apparatus using a helicon wave discharge. The configuration will be briefly described. Reference numeral 1 is a plasma generation chamber, 2 is a reaction chamber for processing the surface of a substrate, 3 is a substrate holding mechanism, and 4 is a substrate to be processed.
Reference numeral 5 is an exhaust mechanism for making the insides of the plasma generation chamber 1 and the reaction chamber 2 into a space of a required reduced pressure state, 6 is a gas introduction pipe for supplying a reaction gas, and 7 is a solenoid coil for generating a magnetic field inside the discharge chamber 1. is there. An RF power supply 10, a matching circuit 11, and an antenna 12 are provided as a mechanism for supplying high-frequency power to the discharge chamber 1. Further, a magnetic circuit 22 including a plurality of rod-shaped permanent magnets 20 and a yoke 21 is installed around the reaction chamber 2. The magnetic circuit 22 generates a plurality of cusp magnetic fields in the reaction chamber 2.

The above-mentioned conventional apparatus has the characteristics that the etching rate is high and the etching accuracy is high, as compared with the dry etching apparatus using the parallel plate type high frequency discharge which has been widely used from the past. It has an advantage that it can be applied to a dry etching apparatus that requires processing.

[0005]

The conventional dry etching apparatus utilizing the above helicon wave discharge is generally
It has the following problems.

When performing etching of a silicon oxide film, which is widely used as the most general insulator in a semiconductor device, in order to perform anisotropic etching and give selectivity to the etching rate of underlying silicon, Dry etching must be performed under the condition that deposits are relatively likely to occur. As a result, a certain amount of deposit adherence was unavoidable even in the reaction chamber where the generation of deposit was not originally desired. Generally, the temperature of the inner wall of the reaction chamber is lower than that of the inner wall of the discharge chamber, so that a deposit having a low density is deposited. This deposit has a basic problem that it easily peels off when it becomes thicker than a certain amount and becomes dust, which deteriorates the yield of semiconductor devices.

[0007] Further, a device for confining plasma by setting a surface magnetic field on the inner wall of the reaction chamber is generally used. In the case of such an apparatus, the deposition of the deposit on the inner wall of the reaction chamber is locally deposited depending on the shape of the magnetic field. The same problem as described above occurs at the portion where the deposit is locally deposited.

Further, in the above-mentioned dry etching apparatus utilizing plasma of lower pressure and higher density than the conventional one, the etching rate is remarkably higher than that of the conventional apparatus such as the parallel plate, while the amount of deposits is also deposited. Generally, the number will be greater than before. The high deposition rate of deposits suggests that more frequent equipment maintenance may be required, reducing the overall throughput of the equipment. This may hinder the widespread use of dry etching apparatuses that use high-density plasma.

In view of the above problems, an object of the present invention is to provide a high-frequency discharge reactor in which high-speed and high-accuracy processing is achieved by utilizing low-pressure and high-density plasma, and maintenance of the apparatus is facilitated. Especially.

[0010]

A first high-frequency discharge reactor according to the present invention introduces high-frequency power by an exhaust mechanism, a high-frequency power supply mechanism, and a high-frequency power supply mechanism into a space decompressed by the exhaust mechanism. The inside of the processing chamber is equipped with a plasma generation chamber for discharging a predetermined gas to generate plasma and a processing chamber for introducing the plasma generated in the plasma generation chamber to process the surface of the substrate on the substrate holding mechanism. A magnetic circuit that generates a plurality of cusp magnetic fields in the space is installed around the processing chamber, a cylindrical inner wall member in contact with plasma is rotatably supported inside the wall of the processing chamber, and the inner wall member is rotated. It is configured to provide a rotary drive device that causes the rotation.

In the above construction, preferably, heating means for heating the inner wall member and control means for controlling the output of the heating means to adjust the surface temperature of the inner wall member are provided.

A second high-frequency discharge reaction device according to the present invention is an exhaust mechanism, a high-frequency power supply mechanism, and a high-frequency power supply mechanism introduces high-frequency power into a space decompressed by the exhaust mechanism to discharge a predetermined gas. It has a plasma generation chamber for generating plasma and a processing chamber for processing the surface of the substrate on the substrate holding mechanism by introducing the plasma generated in the plasma generation chamber, and multiple cusp magnetic fields in the internal space of the processing chamber. A magnetic circuit for generating the magnetic field is rotatably supported around the processing chamber, and a rotation drive device for rotating the magnetic circuit is further provided.

In the above structure, preferably, a cylindrical inner wall member that comes into contact with plasma is installed inside the wall of the processing chamber, and further heating means for heating the inner wall member and output of the heating means are controlled. A control means for adjusting the surface temperature of the inner wall member is provided.

In each of the above constructions, preferably, the magnetic circuit is arranged with its longitudinal direction oriented in the axial direction of the cylindrical processing chamber, spaced around the peripheral surface of the processing chamber, and adjacent to each other. It includes a plurality of rod-shaped permanent magnets having opposite polarities.

In each of the above constructions, preferably, the magnetic circuit surrounds the outer peripheral surface of the processing chamber and is arranged at intervals in the axial direction of the cylindrical processing chamber, and the polarities of adjacent magnetic circuits are opposite to each other. It includes a plurality of ring-shaped permanent magnets.

In the above structure, preferably, a reciprocating drive device is provided for reciprocating the magnetic circuit in the axial direction of the cylindrical processing chamber.

In the above arrangement, preferably microwave power is used as the high frequency power. In this case, microwaves are included in high-frequency power in a broad sense.

[0018]

According to the present invention, according to the first structure, the cylindrical inner wall member in contact with the plasma is rotatably provided, and according to the second structure, a plurality of cusp magnetic fields generated inside the processing chamber are generated. The rotation prevents the local deposition of deposits in the processing chamber and prolongs the maintenance cycle. That is, by rotating the inner wall member, or by rotating a plurality of cusp magnetic fields,
The entire surface of the wall surface in contact with the plasma in the processing chamber is bombarded with ions and electrons, so that uniform deposits are deposited and the adhesive force of the deposits is increased. Elimination of non-uniformity in deposit amount and characteristics in the processing chamber.
As a result, as in the past, it does not begin to peel off from the adhesion area where there is a large amount of local deposits, and there is also a small amount of peeling-off deposits due to only neutral active species. Is possible.

By providing a heating mechanism and a temperature control mechanism capable of raising the temperature of the wall surface portion in contact with the plasma in the processing chamber, the action due to the impact of the above-mentioned ions and electrons is assisted, and as a result, the deposition of the deposit is prevented. The adhesion force is increased and the adhesion amount is decreased.

[0020]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a constitutional view showing a typical embodiment of a high frequency discharge reactor according to the present invention. The basic part of the configuration of the high-frequency discharge reaction device shown in FIG. 1 is the same as that of the conventional device shown in FIG. 6, and the same elements are designated by the same reference numerals. The configuration shown in FIG. 1 will be described in detail below.

In FIG. 1, reference numeral 1 is a plasma generating chamber for generating plasma, which is formed of a dielectric material such as quartz, and 2 is a reaction chamber which contains a substrate holding mechanism 3 and which is above the substrate holding mechanism 3. It is for performing the surface treatment of the substrate 4 to be processed mounted on the. Reaction chamber 2 is substrate 4 to be processed
Is a processing chamber for processing the. The plasma generation chamber 1 and the reaction chamber 2 have, for example, a cylindrical peripheral wall.

The plasma generation chamber 1 is connected to the upper wall of the reaction chamber 2 via a vacuum sealing mechanism such as an O-ring, and the internal space of the plasma generation chamber 1 and the internal space of the reaction chamber 2 communicate with each other. The substrate holding mechanism 3 arranged in the reaction chamber 2 is arranged at a lower position facing the plasma generation chamber 1. An exhaust mechanism 5 is provided in the lower part of the reaction chamber 2, and by the exhaust mechanism 5,
The internal spaces of the reaction chamber 2 and the plasma generation chamber 1 are exhausted to a required reduced pressure state (vacuum). A gas introduction pipe 6 is provided in the plasma generation chamber 1, and a solenoid coil 7 is further provided around the gas introduction pipe 6. A magnetic field is generated inside the plasma generation chamber 1 by the solenoid coil 7. Also reaction chamber 2
A magnetic circuit 22 composed of a plurality of rod-shaped permanent magnets 20 and a cylindrical yoke 21 is installed around the. The rod-shaped permanent magnet 20 is arranged with its longitudinal direction oriented in the vertical direction in FIG. 1 (the axial direction of the cylindrical reaction chamber 2).

FIG. 2 is a sectional view taken along the line II-II in FIG. 1, and the configuration of the magnetic circuit 22 will be more apparent from this drawing. A cylindrical yoke 21 is arranged so as to cover the periphery of the reaction chamber 2, and a plurality of rod-shaped permanent magnets 20 are arranged between the reaction chamber 2 and the cylindrical yoke 21. The rod-shaped permanent magnet 20 is magnetized in the radial direction, and magnetic poles are formed on the inner side and the outer side. The plurality of permanent magnets 20 are arranged, for example, at equal intervals around the reaction chamber 2, and the magnetic poles inside the permanent magnet 20 face the outer peripheral surface of the reaction chamber 2. The magnetic poles of the permanent magnet 20 facing the outer peripheral surface of the reaction chamber 2 are arranged so that the adjacent permanent magnets have opposite magnetic poles N and S. Reference numeral 23 indicates the distribution of a plurality of cusp magnetic fields (surface magnetic fields) generated near the inner wall surface of the reaction chamber 2 formed by the plurality of permanent magnets 20.

A high frequency power supply mechanism is attached to the plasma generation chamber 1. The high frequency electrode supply mechanism uses a high frequency power source (R
F power source) 10, a matching circuit 11, and an antenna 12 installed around the plasma generation chamber 1. The antenna 12 may feature various forms of construction, as is well known in the art. Detailed description of the structure of the antenna and the like is omitted in this embodiment. Further, the high frequency power supply mechanism is understood in a broad sense, and includes a microwave power supply mechanism.

The basic operation of the high frequency discharge reactor based on the above configuration will be described.

First, the inside of the plasma generation chamber 1 and the reaction chamber 2 is evacuated by the exhaust mechanism 5 to a required depressurized state, and thereafter, the inside of the plasma generation chamber 1 is controlled by the gas introduction pipe 6 so that a predetermined gas has a predetermined pressure. To introduce. This predetermined pressure is an optimum value determined by the gas type, antenna shape, magnetic field strength, and the like. The gas inlet pipe 6 is
In this embodiment, it is attached to the plasma generation chamber 1, but it can also be attached to the reaction chamber 2. It is also possible to separately supply the gas by introducing gas introduction pipes 6 into the plasma generation chamber 1 and the reaction chamber 2.

Next, when the high frequency power generated by the high frequency power source 10 is supplied to the antenna 12, a high frequency discharge is generated in the antenna 12 and plasma is generated. At this time, if a magnetic field is generated in the plasma generation chamber 1 by the solenoid coil 7, the plasma generation efficiency is improved, and discharge can be generated even at a low gas pressure as compared with the case where there is no magnetic field. In addition, the antenna 12
Depending on the configuration, it is possible to generate plasma by so-called helicon waves and apply it as an ultrahigh-density plasma device.

The ions and the activated gas molecules or atoms present in the plasma generated in the plasma generating chamber 1 as described above diffuse inside the reaction chamber 2 and the substrate 4
It reacts with the thin film on the surface of and removes it. Since the charged particles in the plasma move along the magnetic field in the reaction chamber 2, the reaction chamber 2 is moved by the magnetic circuit 22 as shown in FIG.
By the action of the magnetic field 23 generated on the inner wall surface of the reaction chamber 2
Loss due to collision of charged particles in the plasma inside the reaction chamber with the inner wall of the reaction chamber is reduced, and the plasma density in the reaction chamber 2 can be kept high. Further, the magnetic circuit 22 can keep the density distribution of plasma in the reaction chamber 2 excellent.

In the structure of the high frequency discharge reaction apparatus of this embodiment, a cylindrical electrode 8 is further provided inside the reaction chamber 2 between the inner wall of the reaction chamber 2 and the substrate holding mechanism 4 as shown in FIG. Is provided in the space. The cylindrical electrode 8 is arranged along the inner wall surface of the reaction chamber 2. In this case, as shown in FIG. 1, when the inner diameter of the cylindrical reaction chamber 2 is larger than the inner diameter of the cylindrical plasma generation chamber 1, the plasma generation chamber 1 is located near the plasma generation chamber 1 in the cylindrical electrode 8. A disk-shaped electrode 9 having a central hole with an inner diameter larger than the inner diameter is provided and is formed integrally with the cylindrical electrode 8. The electrode 9 is not required when the inner diameter of the cylindrical reaction chamber 2 is equal to or smaller than the inner diameter of the cylindrical plasma generation chamber 1. The electrode composed of the cylindrical electrode 8 and the disc-shaped electrode 9 is rotatably attached by the rotation drive mechanism 13. That is, the cylindrical electrode 8 and the like are rotatably attached by a support mechanism (not shown), and are rotated by, for example, the roller 13a provided on the rotary drive shaft of the rotary drive mechanism 13. These electrodes 8 and 9 are inner wall members that come into contact with plasma generated in the reaction chamber 2. The cylindrical electrode 8 and the like are held at a required potential for the purpose of controlling the distribution of plasma generated inside. In the sectional view taken along the line II-II of FIG.
Are not shown.

Next, the operation of the high-frequency discharge reaction device shown in FIGS. 1 and 2 and the effect thereof will be described in comparison with the conventional device shown in FIG.

When the conventional apparatus is applied to dry etching, it has been a problem that unnecessary deposits adhere to the inner wall surfaces of the plasma generating chamber and the reaction chamber. The state of deposit formation varies greatly depending on the intended etching process, and in the dry etching process of silicon oxide film using a frequently used mixed gas mainly containing CFC, polymerization mainly containing fluorine, carbon, and hydrogen is performed. It is known that objects accumulate. The amount of polymer deposited varies greatly depending on the gas composition, discharge conditions, etc., but this polymer plays an important role in dry etching of the silicon oxide film, so perform etching under discharge conditions that do not generate deposits. Is not realistic. Therefore, it is required that the amount of deposits generated is relatively small and that the deposits do not peel off during dry etching. Based on this viewpoint, the operations of the conventional device and the device according to the present invention will be compared below.

Since the conventional apparatus does not have the cylindrical electrode 8 and the disk-shaped electrode 9, the deposit directly adheres to the inner wall surface of the reaction chamber 2. A large amount of the deposit adheres to the portion where the surface magnetic field 23 by the magnetic circuit 22 crosses the inner wall of the reaction chamber 2 relatively firmly and in large quantities, and a small amount is deposited in the portion where the surface magnetic field 23 is parallel to the inner wall of the reaction chamber 2. However, it is attached in a state where it is relatively easy to peel off. In other words, in the deposit where the surface magnetic field 23 crosses the inner wall of the reaction chamber 2, since the ions and electrons flow into the inner wall of the reaction chamber 2 along the magnetic field, the deposition rate is high, and the impact of the inflowing electrons causes The film quality becomes strong because the inner wall surface of the reaction chamber 2 is appropriately heated, whereas the deposit in the portion where the surface magnetic field 23 and the inner wall surface of the reaction chamber 2 are parallel to each other reacts due to the effect of plasma confinement. Ions and electrons do not flow into the inner wall of the chamber 2, and neutral active species adhere to it, and deposits with low density due to polymerization adhere to the inner wall of the chamber 2 so that they easily peel off.

In contrast to the above-mentioned conventional technique, in the high-frequency discharge reaction device shown in the above-mentioned embodiment, the wall surface in contact with the plasma generated in the reaction chamber 2 is composed of the rotatable cylindrical electrode 8 and disk electrode 9. Therefore, there is no unevenness in the characteristics of the deposit described above, and a uniform deposit is deposited on the entire surface. Further, since this deposit is uniformly bombarded with ions and electrons over the entire surface, the adhesion force is almost the same as that of the deposit where the surface magnetic field in the conventional device in which the inner wall portion in contact with the plasma does not rotate crosses the inner wall. It will be strong. Further, since the deposit adheres to the inner wall of the cylindrical electrode 8 uniformly, it is possible to prevent the deposit from locally adhering to start peeling from a portion where the deposition amount is large, as compared with the conventional device. Further, as compared with the conventional device, there is also no part where a deposit that is easily peeled off and is derived from only neutral active species is attached. Therefore, the time required for the deposits to be peeled off is significantly longer than before, and there is no part where the deposits are easily peeled off.Therefore, the maintenance cycle of the device can be lengthened and the product yield can be improved. it can.

Next, another embodiment of the present invention will be described with reference to FIG. In FIG. 3, elements that are substantially the same as the elements described in FIG. 1 are given the same reference numerals. In this embodiment, a heating mechanism is attached to the cylindrical electrode 8 and the disc-shaped electrode 9. This heating mechanism is capable of controlling the temperature of the heater 30 provided inside the electrodes 8 and 9, the temperature sensor 31a that detects the temperature of the cylindrical electrode 8, the temperature sensor 31b that detects the temperature of the disk electrode 9, and the temperature sensor 31b. Heating power source 32 and the heating power source 3 by inputting the detection signals of the temperature sensors 31a and 31b.
It is constituted by a control device 33 for controlling the output of No. 2.
The other configuration is the same as the device configuration of the above-mentioned embodiment.

In the apparatus of this embodiment, the heating mechanism controls the temperature of the electrodes 8 and 9 to be maintained at a desired constant temperature during discharge. The optimum heating temperature varies depending on the intended process, but is preferably set higher than the surface temperature of the substrate to be processed in the silicon oxide film etching process. By this temperature control, the deposition rate of the deposits on the surfaces of the electrodes 8 and 9 in contact with the plasma can be reduced, and the deposits can be made dense.

As another advantage of this embodiment, by providing the heating mechanism separately for the electrodes 8 and 9, more precise control of the deposit can be performed.
That is, although the cylindrical electrode 8 always collides with ions and electrons, the disc-shaped electrode 9 does not cross the magnetic field lines, so that the deposit always grows only by the attachment of the neutral active species. Therefore, the electrode temperatures required for optimizing the characteristics of the deposits attached to the two electrodes 8 and 9 differ between the two. Generally, the temperature of the disk-shaped electrode 9 that is not impacted by ions or the like needs to be higher than that of the electrode 8. on the other hand,
If the temperature control is not performed, the cylindrical electrode 8 that is bombarded with ions or electrons is likely to have a higher temperature. If this temperature difference poses a problem, it is very effective to provide the heating mechanism for performing the temperature control shown in this embodiment.

FIG. 4 shows another embodiment of the present invention. In this embodiment, substantially the same elements as those shown in FIG. 1 are designated by the same reference numerals. In this embodiment, a structure for rotating the magnetic circuit 22 is adopted. That is, the rotary drive mechanism 40 is provided outside the magnetic circuit 22 rotatably attached by a support mechanism (not shown), and the cylindrical yoke 21 and the plurality of permanent magnets 20 are rotated by the roller 40a provided on the rotary drive shaft. Since the rotary drive mechanism 40 is provided outside the reaction chamber 2, the rotary drive mechanism 1 and the electrodes 8 and 9 provided inside the reaction chamber 2 shown in FIG. 1 can be omitted. According to this embodiment, the cusp magnetic field 2 formed in the reaction chamber 2 by rotating the magnetic circuit 22.
3 rotates, and the characteristics of the deposit attached to the inner wall surface of the reaction chamber 2 can be made uniform. As an advantage compared with the other examples, since it is not necessary to install a rotary drive mechanism, a contact portion such as a roller, and other sliding portions inside the reaction chamber 2, it is possible to reduce the generation of dust. .

FIG. 5 shows still another embodiment of the present invention. In this embodiment, substantially the same elements as those shown in FIGS. 1 and 2 are designated by the same reference numerals. In this embodiment, the plurality of permanent magnets 22 included in the magnetic circuit 22 have a ring shape and are magnetized in the radial direction. The plurality of ring-shaped permanent magnets 22 are arranged, for example, at equal intervals in the vertical direction (axial direction of the reaction chamber 2) so as to surround the periphery of the reaction chamber 2. The other structure is basically the same as the structure shown in FIG. A plurality of cusp magnetic fields are also formed on the inner wall surface of the reaction chamber 2 by the plurality of permanent magnets 22 having the above shapes and arrangements. Further, a cylindrical electrode 8 and a disk-shaped electrode 9 are provided inside the reaction chamber 2, and a heater 30 and temperature sensors 31 a, 3 in the electrodes 8, 9 are provided.
A heating mechanism including 1b, a heating power source 32, and a controller 33 is provided. With this configuration, the same effect as that of the embodiment of FIG. 3 can be produced. In this embodiment, a reciprocating motion driving mechanism 50 may be further provided, and the reciprocating motion driving mechanism 50 may reciprocate the magnetic circuit 22 in the axial direction of the reaction chamber 2. By the reciprocating motion of the magnetic circuit 22 by the reciprocating motion driving mechanism 50, the same effect as the case of the other embodiments described above, that is, the effect of eliminating the locally deposited portion can be obtained.

[0040]

As is apparent from the above description, according to the present invention, the inner wall surface in contact with the plasma in the processing chamber is rotated, or the cusp magnetic field generated in the processing chamber is rotated. Prevents deposits from locally adhering to the inner wall surface, and prevents deposits that are likely to peel off, thereby controlling the property of the deposits adhering to the inner wall surface of the processing chamber to be more desirable. be able to. INDUSTRIAL APPLICABILITY The present invention is very effective in terms of maintainability of an apparatus to which high-density plasma is applied and improvement of product yield. Further, the above effect can be further enhanced by adding a heating mechanism and a temperature control mechanism to the inner wall member having a surface in contact with plasma provided in the processing chamber. Further, microwave power can be used as power for generating plasma, and this can be applied to a so-called ECR plasma device. When the present invention is applied to a dry etching apparatus to which high-density plasma that requires high-speed processing is applied, the effect becomes remarkable.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a typical embodiment of a high-frequency discharge reaction device according to the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is a sectional view showing another embodiment of the present invention.

FIG. 4 is a sectional view showing still another embodiment of the present invention.

FIG. 5 is a sectional view showing still another embodiment of the present invention.

FIG. 6 is a cross-sectional view showing an example of a conventional high-frequency discharge reaction device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Plasma generation chamber 2 Reaction chamber (processing chamber) 3 Substrate holding mechanism 4 Substrate 5 Exhaust mechanism 7 Solenoid coil 8,9 Electrode (inner wall member) 12 Antenna 13,40 Rotation drive mechanism 22 Magnetic circuit 23 Cusp magnetic field 30 Heater 32 For heating Power supply 50 Reciprocating motion drive mechanism

Claims (8)

[Claims] 1. An exhaust mechanism, a high-frequency power supply mechanism, and a plasma generation chamber for introducing high-frequency power by the high-frequency power supply mechanism into a space decompressed by the exhaust mechanism to discharge a predetermined gas and generate plasma. And a high-frequency discharge reaction apparatus including a processing chamber for processing the surface of the substrate on the substrate holding mechanism by introducing plasma generated in the plasma generation chamber, generating a plurality of cusp magnetic fields in the internal space of the processing chamber. A magnetic circuit is installed around the processing chamber,
A high-frequency discharge reaction device comprising: a cylindrical inner wall member rotatably supported inside the wall of the processing chamber, which is rotatably supported, and a rotation drive device for rotating the inner wall member. 2. The high-frequency discharge reactor according to claim 1, further comprising heating means for heating the inner wall member and control means for controlling the output of the heating means to adjust the surface temperature of the inner wall member. A high frequency discharge reaction device characterized by the above. 3. An exhaust mechanism, a high frequency power supply mechanism, and a plasma generation chamber for introducing high frequency power by the high frequency power supply mechanism into a space decompressed by the exhaust mechanism to discharge a predetermined gas and generate plasma. And a high-frequency discharge reaction apparatus including a processing chamber for processing the surface of the substrate on the substrate holding mechanism by introducing plasma generated in the plasma generation chamber, generating a plurality of cusp magnetic fields in the internal space of the processing chamber. A high-frequency discharge reaction device comprising: a magnetic circuit that is rotatably supported around the processing chamber, and a rotation drive device that rotates the magnetic circuit. 4. The high-frequency discharge reactor according to claim 3, wherein a cylindrical inner wall member that comes into contact with plasma is installed inside the wall of the processing chamber, and a heating means for heating the inner wall member, A high-frequency discharge reaction device comprising control means for controlling the output of the heating means to adjust the surface temperature of the inner wall member. 5. The high-frequency discharge reaction device according to claim 1, wherein the magnetic circuit has a longitudinal direction oriented in an axial direction of the processing chamber and surrounds a peripheral surface of the processing chamber. A high-frequency discharge reaction device comprising a plurality of rod-shaped permanent magnets arranged at intervals and having mutually opposite polarities. 6. The high-frequency discharge reaction device according to claim 3, wherein the magnetic circuit surrounds the outer peripheral surface of the processing chamber, is arranged at an interval in the axial direction of the processing chamber, and is adjacent to each other. A high-frequency discharge reaction device comprising a plurality of ring-shaped permanent magnets whose polarities are opposite to each other. 7. The high frequency discharge reaction apparatus according to claim 6, further comprising a reciprocating motion drive device for reciprocating the magnetic circuit in the axial direction of the processing chamber. 8. The high-frequency discharge reaction device according to claim 1, wherein microwave power is used as the high-frequency power.