JPH0695540B2 - Semiconductor device connection conductors - Google Patents
Semiconductor device connection conductorsInfo
- Publication number
- JPH0695540B2 JPH0695540B2 JP60284057A JP28405785A JPH0695540B2 JP H0695540 B2 JPH0695540 B2 JP H0695540B2 JP 60284057 A JP60284057 A JP 60284057A JP 28405785 A JP28405785 A JP 28405785A JP H0695540 B2 JPH0695540 B2 JP H0695540B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- conductor
- melting point
- copper
- core material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45647—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Insulated Conductors (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、パワートランジスタ、サイリスタ、IC、LS
I等の半導体装置の結線用導体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a power transistor, a thyristor, an IC, an LS.
The present invention relates to a conductor for connecting a semiconductor device such as I.
［従来の技術］ 従来、半導体装置の結線用導体としては、高純度アルミ
ニウム、Al−１％Si合金等からなるアルミニウム合金線
や、金線が用いられてきた。これらの線は、第３図にお
いて参照番号１で示すような単層構造である。[Prior Art] Conventionally, an aluminum alloy wire made of high-purity aluminum, an Al-1% Si alloy or the like, or a gold wire has been used as a conductor for connecting a semiconductor device. These lines are a single layer structure as indicated by reference numeral 1 in FIG.
或る程度の大きさの電流値が流れるたとえばパワートラ
ンジスタ等の半導体装置では、誤って過電流が流れた場
合、単に個々のトランジスタ等の半導体装置が破損する
のみならず、他の半導体装置を含む電子機器全体が損傷
してしまうおそれがある。そのため、そのような過電流
に対処するために、従来では、電子機器の回路にヒュー
ズ機能を有する装置を組み込んだりしている。In a semiconductor device such as a power transistor in which a current value of a certain amount flows, if an overcurrent is mistakenly flowed, not only the semiconductor device such as an individual transistor is damaged but also other semiconductor devices are included. The entire electronic device may be damaged. Therefore, in order to deal with such an overcurrent, conventionally, a device having a fuse function is incorporated in a circuit of an electronic device.
［発明が解決しようとする問題点］ 小型化が要望される半導体装置では、ヒューズ機能を有
する装置を別に設けるのは好ましいものではなく、でき
れば結線用導体にヒューズ機能をもたせたい。しかし、
従来の結線用導体の材料である金やアルミニウムはその
融点が高く、過電流が流れても溶融しにくい。すなわ
ち、金の融点は1063℃であり、高純度アルミニウムの融
点は660℃である。一方、はんだ等の低融点金属であれ
ば過電流が流れたとき溶融してヒューズ機能を発揮する
であろうが、パワートランジスタ等の半導体装置の結線
用導体としては不適である。なぜならば、そのような低
融点金属は導電率が低く、強度も不足し、さらには結線
作業に困難性を伴うからである。[Problems to be Solved by the Invention] In a semiconductor device that is required to be miniaturized, it is not preferable to separately provide a device having a fuse function, and if possible, it is desirable to provide a wiring conductor with a fuse function. But,
Gold and aluminum, which are conventional materials for connecting conductors, have high melting points and are unlikely to melt even when an overcurrent flows. That is, the melting point of gold is 1063 ° C, and the melting point of high-purity aluminum is 660 ° C. On the other hand, if a low melting point metal such as solder will melt when an overcurrent flows and exhibit a fuse function, it is unsuitable as a wiring conductor for a semiconductor device such as a power transistor. This is because such a low melting point metal has a low electric conductivity, a lack of strength, and a difficulty in connection work.
それゆえに、この発明の目的は、それ自身がヒューズ機
能を有する半導体装置の結線用導体を提供することであ
る。Therefore, an object of the present invention is to provide a conductor for connecting a semiconductor device, which itself has a fuse function.
［問題点を解決するための手段および作用効果］ この発明に従った半導体装置の結線用導体は、第１図に
示すように芯材２と、該芯材２のまわりを囲む外被材３
とからなる。そして、芯材２は融点が450℃以下の材料
から作られ、外被材３は、銅または銅合金から作られて
いる。[Means and Actions for Solving Problems] As shown in FIG. 1, the wiring conductor of the semiconductor device according to the present invention includes a core member 2 and an outer jacket member 3 surrounding the core member 2.
Consists of. The core material 2 is made of a material having a melting point of 450 ° C. or lower, and the outer covering material 3 is made of copper or a copper alloy.
したがって、過電流が導体に流れたときには、芯材２が
溶融し、その結果体積膨張が起こり外被材３を破り、導
体が断線する。このように、この発明に従った結線用導
体は、それ自体がヒューズ機能を有しているので、ヒュ
ーズ機能を有する装置を別に組み込む必要がなく、半導
体装置の小型化を図ることができる。また、外被材３が
銅または銅合金から作られているので、第３図に示した
ような従来の単層構造の高純度銅からなる導体や銅合金
からなる導体に比べても、導電率の低下はほとんどな
い。同様に、機械的強度に関しても、単層構造の高純度
銅や銅合金からなる導体に比べて、遜色はない。さら
に、外被材３が銅または銅合金から作られていることか
ら、ボンディング特性が良好である。Therefore, when an overcurrent flows through the conductor, the core material 2 melts, resulting in volume expansion, which breaks the jacket material 3 and breaks the conductor. As described above, since the wiring conductor according to the present invention itself has the fuse function, it is not necessary to separately install a device having the fuse function, and the semiconductor device can be downsized. Further, since the jacket material 3 is made of copper or a copper alloy, it is more conductive than the conventional conductor made of high-purity copper having a single-layer structure or a conductor made of copper alloy as shown in FIG. There is almost no decrease in the rate. Similarly, in terms of mechanical strength, it is comparable to a conductor made of high-purity copper or a copper alloy having a single-layer structure. Furthermore, since the jacket material 3 is made of copper or a copper alloy, the bonding characteristics are good.
第１図に示した実施例では、芯材２が１本であったが、
芯材の数は複数本であってもよい。たとえば、第２図に
示した他の実施例では、芯材４が３本あり、そのまわり
を外被材５で囲んでいる。In the embodiment shown in FIG. 1, the number of the core materials 2 is one,
The number of core materials may be plural. For example, in another embodiment shown in FIG. 2, there are three core materials 4 and the surrounding material is surrounded by a jacket material 5.
芯材2,4を構成する材料として、融点が450℃以下のもの
を用いるのは、過電流が流れたときにそのような低融点
材料が確実に溶融するためである。芯材2,4を構成する
材料は、たとえば、ビスマス、鉛、カドミウム、亜鉛、
錫からなる群から選ばれた金属またはその合金である。
共立出版株式会社発行の化学大辞典によれば、ビスマス
の融点は271.3℃、鉛の融点は327.4℃、カドミウムの融
点は320.9℃、亜鉛の融点は419℃、錫の融点は231.9℃
である。The reason that the core material 2, 4 has a melting point of 450 ° C. or less is that such a low-melting material surely melts when an overcurrent flows. The material forming the core materials 2 and 4 is, for example, bismuth, lead, cadmium, zinc,
It is a metal selected from the group consisting of tin or an alloy thereof.
According to the Chemical Dictionary published by Kyoritsu Publishing Co., Ltd., the melting point of bismuth is 271.3 ° C, the melting point of lead is 327.4 ° C, the melting point of cadmium is 320.9 ° C, the melting point of zinc is 419 ° C, and the melting point of tin is 231.9 ° C.
Is.
［実施例］ 高純度銅管内に、以下の第１表の「芯材」の欄に示すよ
うな組成の低融点金属または合金を鋳造し、直径18mmの
銅被覆低融点線材を作成した。この線材における銅の断
面積比は、約80％であった。この線材を伸線加工し、直
径200μｍの線にした。このようにして得られた線の導
電率は約80％IACSであり、結線用の導体として十分な値
であった。[Example] A low melting point metal or alloy having a composition as shown in the column of "core material" in Table 1 below was cast in a high purity copper pipe to prepare a copper-coated low melting point wire having a diameter of 18 mm. The cross-sectional area ratio of copper in this wire was about 80%. This wire rod was drawn into a wire having a diameter of 200 μm. The conductivity of the wire thus obtained was about 80% IACS, which was a sufficient value as a conductor for connection.
上記線材をパワートランジスタの入力側結線用導体とし
て、超音波ボンディングにより結線してパワートランジ
スタを試作した。そして、これに10Aの過電流を流し
て、溶断までの時間を測定した。この測定結果が第１表
に示される。The above wire was used as a conductor for connecting the input side of the power transistor, and was connected by ultrasonic bonding to fabricate a power transistor. Then, an overcurrent of 10 A was passed through this, and the time until melting was measured. The results of this measurement are shown in Table 1.
比較のために、純度99.999％の銅からなる単層構造の導
体を用いて、同様に溶断までの時間を測定した。この結
果も第１表に示される。For comparison, a conductor having a single-layer structure made of copper having a purity of 99.999% was similarly used to measure the time until fusing. The results are also shown in Table 1.
第１表から明らかなように、本発明例である試料番号１
〜５の導体は、良好なヒューズ機能を発揮した。As is clear from Table 1, sample number 1 which is an example of the present invention
The ~ 5 conductors demonstrated good fuse function.
第１図は、この発明の一実施例を示す断面図である。第
２図は、この発明の他の実施例を示す断面図である。 第３図は、従来の結線用導体を示す断面図である。 図において、２は芯材、３は外被材を示す。FIG. 1 is a sectional view showing an embodiment of the present invention. FIG. 2 is a sectional view showing another embodiment of the present invention. FIG. 3 is a sectional view showing a conventional connection conductor. In the figure, 2 is a core material, and 3 is a jacket material.
Claims (4)
らなり、 前記芯材は融点が450℃以下の材料から作られ、 前記外被材は、銅または銅合金から作られている、半導
体装置の結線用導体。1. A core material and an outer covering material surrounding the core material, wherein the core material is made of a material having a melting point of 450 ° C. or lower, and the outer covering material is made of copper or a copper alloy. A known conductor for connecting semiconductor devices.
囲第１項に記載の半導体装置の結線用導体。2. The connection conductor for a semiconductor device according to claim 1, wherein the number of cores is one.
範囲第１項に記載の半導体装置の結線用導体。3. The connection conductor for a semiconductor device according to claim 1, wherein the number of cores is plural.
鉛、カドミウム、亜鉛、錫からなる群から選ばれた金属
またはその合金である、特許請求の範囲第１項ないし第
３項のいずれかに記載の半導体装置の結線用導体。4. The material constituting the core material is bismuth,
The conductor for connecting a semiconductor device according to any one of claims 1 to 3, which is a metal selected from the group consisting of lead, cadmium, zinc and tin or an alloy thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60284057A JPH0695540B2 (en) | 1985-12-16 | 1985-12-16 | Semiconductor device connection conductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60284057A JPH0695540B2 (en) | 1985-12-16 | 1985-12-16 | Semiconductor device connection conductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62141750A JPS62141750A (en) | 1987-06-25 |
| JPH0695540B2 true JPH0695540B2 (en) | 1994-11-24 |
Family
ID=17673730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60284057A Expired - Lifetime JPH0695540B2 (en) | 1985-12-16 | 1985-12-16 | Semiconductor device connection conductors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0695540B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020054814A1 (en) | 2018-09-13 | 2020-03-19 | キヤノン株式会社 | Image heating device and image formation device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2766933B2 (en) * | 1989-06-29 | 1998-06-18 | 株式会社日立製作所 | Electronic equipment |
| DE10007209A1 (en) * | 2000-02-17 | 2001-09-06 | Bosch Gmbh Robert | Semiconductor power component with fuse |
-
1985
- 1985-12-16 JP JP60284057A patent/JPH0695540B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020054814A1 (en) | 2018-09-13 | 2020-03-19 | キヤノン株式会社 | Image heating device and image formation device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62141750A (en) | 1987-06-25 |
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