JPH0693539B2 - Exposure equipment - Google Patents

Exposure equipment

Info

Publication number
JPH0693539B2
JPH0693539B2 JP62155431A JP15543187A JPH0693539B2 JP H0693539 B2 JPH0693539 B2 JP H0693539B2 JP 62155431 A JP62155431 A JP 62155431A JP 15543187 A JP15543187 A JP 15543187A JP H0693539 B2 JPH0693539 B2 JP H0693539B2
Authority
JP
Japan
Prior art keywords
mask
substrate
gap
chuck
measuring device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62155431A
Other languages
Japanese (ja)
Other versions
JPS641293A (en
JPH011293A (en
Inventor
行雄 見坊
朝宏 久邇
伸幸 秋山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62155431A priority Critical patent/JPH0693539B2/en
Publication of JPS641293A publication Critical patent/JPS641293A/en
Publication of JPH011293A publication Critical patent/JPH011293A/en
Publication of JPH0693539B2 publication Critical patent/JPH0693539B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マスクと基板の間隙を所定の値に設定できる
ようにした近接露光に好適な露光装置に関する。
The present invention relates to an exposure apparatus suitable for proximity exposure in which the gap between a mask and a substrate can be set to a predetermined value.

〔従来の技術〕[Conventional technology]

この種の間隙設定による近接露光装置の従来技術として
は、特開昭57−204547号公報に開示されている技術があ
り、その概要を第5図に示す。
As a conventional technique of a proximity exposure apparatus with this type of gap setting, there is a technique disclosed in Japanese Patent Application Laid-Open No. 57-204547, the outline of which is shown in FIG.

第8図の露光装置は、露光X線源50とマスクとステージ
52上のマスク平坦度測定器53とウェハ平坦度測定器53と
ステージ52上のウェハ変形チャック13とコントローラ17
からなっている。
The exposure apparatus shown in FIG. 8 includes an exposure X-ray source 50, a mask and a stage.
Mask flatness measuring device 53 on wafer 52, wafer flatness measuring device 53, wafer deformation chuck 13 on stage 52, and controller 17
It consists of

先ず、マスク平坦度測定器53をマスク51下に置き、マス
ク51の平坦度を測定する。次にウェハ平坦度測定器53に
よりウェハ54の平坦度を測定しながら、ウェハ変形チャ
ック13を用いてウェハ54の表面平坦度をマスク51の平坦
度に一致させる。以上の後、ウェハ54をマスク51の下に
移動すればマスクとウェハの間隙は均一になり、近接露
光が実現できる。
First, the mask flatness measuring device 53 is placed under the mask 51, and the flatness of the mask 51 is measured. Next, while measuring the flatness of the wafer 54 by the wafer flatness measuring device 53, the surface flatness of the wafer 54 is made to match the flatness of the mask 51 by using the wafer deformation chuck 13. After that, if the wafer 54 is moved under the mask 51, the gap between the mask and the wafer becomes uniform, and the proximity exposure can be realized.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

上記従来技術では、マスクと基板の平坦度を測定して間
隙設定していたので、平坦度測定精度が重要であった。
この為、平坦測定器の高精度化(高価・複雑)が必要不
可欠となり、全体に高価にならざるを得なかった。
In the above-mentioned conventional technique, the flatness of the mask and the substrate is measured and the gap is set, so that the flatness measurement accuracy is important.
For this reason, high precision (expensive / complex) of the flatness measuring instrument is indispensable, and the flatness measuring instrument is inevitably expensive.

本発明の目的は、平坦度測定することなく直接間隙設定
することにより、安価で高精度な近接露光を実現できる
ようにした露光装置を提供することにある。
An object of the present invention is to provide an exposure apparatus capable of realizing inexpensive and highly accurate proximity exposure by directly setting a gap without measuring flatness.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的は、マスクと基板間に間隙測定器を入れ、この
値により間隙を均一に設定し、設定終了後に該測定器を
出して、マスク又は基板を上下平行移動して所望の間隙
量を設定することにより、達成される。
The purpose of the above is to put a gap measuring device between the mask and the substrate, set the gap uniformly according to this value, and after the setting is completed, take out the measuring device and move the mask or substrate in parallel up and down to set the desired gap amount. It is achieved by

〔作用〕[Action]

間隙測定器はマスクと基板間にセットされ、マスクと基
板の間隙を測定する。基板変形チャックは、先に求めた
間隙の値に基づき基板を変形し、マスク・基板間隙が均
一もしくは所望の量になるように動作する。
The gap measuring device is set between the mask and the substrate and measures the gap between the mask and the substrate. The substrate deformation chuck deforms the substrate on the basis of the previously obtained gap value, and operates so that the mask-substrate gap becomes uniform or has a desired amount.

間隙が均一(又は所望の値)になった後、基板変形チャ
ック・マスクを同時あるいは片方のみ平行移動すること
により、基板とマスクを十分に近接させることができ
る。
After the gap becomes uniform (or a desired value), the substrate and the chuck can be sufficiently brought close to each other by moving the substrate deforming chuck / mask in parallel or in parallel.

〔実施例〕〔Example〕

コンピュータ用プリント基板は以下の如く製作される。 The printed circuit board for a computer is manufactured as follows.

ガラスエポキシ薄板を銅箔でサンドイッチ構造にし、こ
れにスルーホールを設け、銅箔上にレジストを塗布ある
いはドライフイルムレジストを圧着し、マスク上のパタ
ーンをレジストに平行紫外光により転写露光して、現像
後、銅をエッチして回路パターンを形成する。これらの
内層板を複数作成し、接着して重ねると多層プリント基
板となる。これらの詳細については例えば材料科学昭和
61年10月号P65−P128等にも載っている通りである。
A glass epoxy thin plate is sandwiched with copper foil, a through hole is provided in this, a resist is coated on the copper foil or a dry film resist is pressure-bonded, and the pattern on the mask is transferred to the resist by parallel ultraviolet light exposure and developed. Then, copper is etched to form a circuit pattern. A plurality of these inner layer boards are prepared, adhered and laminated to form a multilayer printed board. For more details, see Material Science Showa
As stated in the October 61 issue, P65-P128, etc.

ところがコンピュータ用プリント基板の大面積化(600
×600mm以上)、パターン線幅の微細化(100μm以下)
により、パターンの露光における不良が多く発生するよ
うになる。これは、マスクと基板間の異物や、両者の接
触によるパターンの破損が原因であり、これに対処する
にはマスクと基板を離して露光する近接露光方式を実現
する必要がある。
However, increasing the area of printed circuit boards for computers (600
X 600 mm or more), miniaturization of pattern line width (100 μm or less)
As a result, many defects occur in the exposure of the pattern. This is caused by foreign matter between the mask and the substrate and pattern damage due to contact between the two. To address this, it is necessary to realize a proximity exposure method in which the mask and the substrate are separated and exposed.

近接露光方式は、マスク・基板間を100μm内外以下に
近接させる必要があるが、大面積のガラスマスクは、数
百μmのたわみを有しており、通常の近接方式では、10
0μm内外の間隙を露光面全面に亘って得ることは出来
ない。
In the proximity exposure method, the distance between the mask and the substrate needs to be close to 100 μm or less, but a large-area glass mask has a deflection of several hundred μm.
It is not possible to obtain a gap of 0 μm inside and outside over the entire exposed surface.

以下、近接露光方式を実現する本発明の一実施例を図面
により説明する。第1図は本発明の一実施例を示す正面
図、第2図はこの実施例における露光時を示す図であ
る。第1図に示す実施例の露光装置は、露光光学系1
と、アライメント光学系2と、マスクチャック3と、パ
ターン4を下面にしたマスク5と、マスク側センサ6、
基板側センサ7からなる間隙測定器8と、間隙測定器8
用駆動系9と、間隙測定器8用較正間隙10と、ドライレ
ジスト(図示せず)を圧着した基板11を真空吸着手段
(真空源に接続された配管及びチャック面に形成された
溝)12でもって真空吸着した基板変形チャック13と、基
板変形チャック13をチルト及び上下動させる上下駆動系
14と、上下量センサ15と、θ(水平面内の回転)・X・
Yステージ16と、コントローラ17とを備えて構成されて
いる。
An embodiment of the present invention for realizing the proximity exposure method will be described below with reference to the drawings. FIG. 1 is a front view showing an embodiment of the present invention, and FIG. 2 is a view showing an exposure in this embodiment. The exposure apparatus of the embodiment shown in FIG.
An alignment optical system 2, a mask chuck 3, a mask 5 having a pattern 4 on its lower surface, a mask side sensor 6,
Gap measuring device 8 including substrate side sensor 7 and gap measuring device 8
Drive system 9, calibration gap 10 for gap measuring device 8, and substrate 11 on which dry resist (not shown) is pressure-bonded to vacuum suction means (pipes connected to a vacuum source and grooves formed on the chuck surface) 12. Thus, the substrate deformation chuck 13 that is vacuum-adsorbed, and the vertical drive system that tilts and vertically moves the substrate deformation chuck 13
14, vertical amount sensor 15, θ (rotation in horizontal plane), X,
The Y stage 16 and the controller 17 are provided.

次に、動作について説明する。Next, the operation will be described.

マスク5をマスクチャック3,基板11を基板変形チャック
13にロードし、ステージ16を動かして基板11をマスク5
の下にセットする。次に較正間隙10の間にあって較正さ
れた間隙測定器8を移動し、間隙20が一定値になるよう
に基板変形チャック13を駆動してゆく。変形チャック13
は溝により分割されたチャック面25と引張りバネ26と、
上下動台27とチャック面の左右ずれ止め(図示せず)か
らなり、間隙測定値によりコントローラ17で、上下動台
27を駆動する。間隙測定器8がマスク5基板11の間を抜
けると、間隙20は一定(又は、所望の値)になる。間隙
測定器8を較正間隙10に戻す時に間隙20を確認し、許容
値内ならば、上下動センサ15の値をモニタしながら上下
駆動系14により基板変形チャック13を上昇させ、数100
μmの間隙で一時停止する。ここで、アライメント光学
系2により基板11,マスク8をアライメントし、アライ
メント終了後更に基板変形チャック13を上昇し、第2図
の如く所定の間隙値Sにセットし、アライメント光学系
2を退避し、平行紫外光30で露光する。
Mask 5 for mask chuck 3, substrate 11 for substrate deformation chuck
13 is loaded, the stage 16 is moved, and the substrate 11 is masked 5
Set below. Next, the calibrated gap measuring device 8 located between the calibrated gaps 10 is moved, and the substrate deformation chuck 13 is driven so that the gap 20 has a constant value. Deformation chuck 13
Is a chuck surface 25 divided by a groove and a tension spring 26,
It consists of a vertical movement table 27 and a chuck surface left and right stopper (not shown).
Drive 27. When the gap measuring device 8 passes between the mask 5 and the substrate 11, the gap 20 becomes constant (or a desired value). When the gap measuring device 8 is returned to the calibration gap 10, the gap 20 is checked, and if it is within the allowable value, the substrate deformation chuck 13 is raised by the vertical drive system 14 while monitoring the value of the vertical movement sensor 15,
Pause at a gap of μm. Here, the substrate 11 and the mask 8 are aligned by the alignment optical system 2, the substrate deformation chuck 13 is further raised after the alignment is completed, and the predetermined gap value S is set as shown in FIG. 2, and the alignment optical system 2 is retracted. , Expose with parallel ultraviolet light 30.

ここで、間隙20は間隙測定器8の幅21とマスク側センサ
6の値22と基板側センサ7の値23の和であり、これらセ
ンサの値は較正間隙10により常に較正されているので、
本方式で最も誤差となるオフセット誤差がない。又、セ
ンサ6,7の和なので、間隙測定器8が移動時に上下して
も間隙20の値は不変であり、駆動系9の精度が並でよ
く、装置が安価となる。以上の方式により間隙20を10μ
mオーダにすることも可能であり、液晶パターン焼付
や、LSI焼付にも適用可能である。
Here, the gap 20 is the sum of the width 21 of the gap measuring device 8, the value 22 of the mask side sensor 6 and the value 23 of the substrate side sensor 7, and since the values of these sensors are constantly calibrated by the calibration gap 10,
There is no offset error, which is the most error in this method. Further, because the sum of the sensors 6 and 7, the value of the gap 20 does not change even if the gap measuring device 8 moves up and down during movement, the accuracy of the drive system 9 is good, and the device is inexpensive. The gap 20 is 10μ by the above method.
It can be set in the order of m, and can be applied to liquid crystal pattern printing and LSI printing.

第3図はマスクチャック3及び間隙測定器8の平面図で
あり、第4図はその側面図である。マスク5は大面積の
場合2辺支持では自重により数100μm以上のたわみが
生じ、構成要素のストローク増大要因となる。
FIG. 3 is a plan view of the mask chuck 3 and the gap measuring device 8, and FIG. 4 is a side view thereof. In the case of a large area of the mask 5, when it is supported on two sides, its own weight causes a deflection of several hundred μm or more, which becomes a factor of increasing the stroke of the component.

一方、マスク5は下面支持がマスク5厚さの影響を受け
ずにすみ又、落下防止も出来、理想的である。しかし、
間隙測定器8のマスク側センサ6とマスク下面間が狭い
場合、マスクチャック3と干渉する。そこで、隣接した
マスク側センサ6間を凹ませ、これに合わせて部分的に
下面チャック31とした。
On the other hand, the mask 5 is ideal because the lower surface support can be prevented from being affected by the thickness of the mask 5 and can be prevented from falling. But,
When the gap between the mask side sensor 6 of the gap measuring device 8 and the lower surface of the mask is narrow, the gap measuring device 8 interferes with the mask chuck 3. Therefore, the adjacent mask-side sensor 6 is recessed, and the lower surface chuck 31 is partially formed in accordance with this.

第5図はエアマイクロ方式による間隙測定器8の断面図
である。給供エア34はそれぞれマスク側センサ6、基板
側センサ7に入る。センサ上端と被測定面間の値22,23
による背圧値35,36はそれぞれアンプ(図示せず)等に
より、あらかじめ較正されたデータにより間隙に変換さ
れる。
FIG. 5 is a sectional view of the air gap type gap measuring device 8. The supply air 34 enters the mask side sensor 6 and the substrate side sensor 7, respectively. Value between sensor top and measured surface 22,23
The back pressure values 35 and 36 due to are converted into gaps by pre-calibrated data by an amplifier (not shown) or the like.

第6図は間隙20を直接測定する間隙センサ40である。間
隙値20が直接1つの背圧値37で出力される。
FIG. 6 shows a gap sensor 40 that directly measures the gap 20. The gap value 20 is output directly as one back pressure value 37.

第7図はセンサ追従式の間隙測定器8の正面図である。
マスク側センサ6の値22が基準値になるように、ボイス
コイル等の上下運動駆動手段41で駆動し、基板側センサ
7の値23も別の基準値になるようにする。このようにす
ると、間隙全てについて、ゼロメソッドでセッティング
出来、精度が向上する。
FIG. 7 is a front view of the sensor-following type gap measuring device 8.
The vertical movement driving means 41 such as a voice coil is driven so that the value 22 of the mask side sensor 6 becomes the reference value, and the value 23 of the substrate side sensor 7 is set to another reference value. In this way, all the gaps can be set by the zero method, and the accuracy is improved.

以上の装置は横型であるが、縦にしても良い。The above device is horizontal, but may be vertical.

〔発明の効果〕〔The invention's effect〕

本発明によれば、マスクと基板の間隙を直接測定して、
基板変形チャックにより間隙を均一化する(あるいは、
所望の間隙にする)ので、簡単な構成により高精度,安
価,高スループットの近接露光が実現出来、100μm以
下のプリント基板回路パターン(あるいは、10μm以下
の液晶パターン,あるいは、サブμmのLSIパターン
等)を得られる。
According to the present invention, the gap between the mask and the substrate is directly measured,
Make the gap uniform by the substrate deformation chuck (or
Since a desired gap is provided, high-accuracy, inexpensive, high-throughput proximity exposure can be realized with a simple configuration, and a printed circuit board circuit pattern of 100 μm or less (or a liquid crystal pattern of 10 μm or less, or a sub-μm LSI pattern, etc.) ) Can be obtained.

又、本発明の別の実施例によれば、間隙測定器を容易に
較正できるので、測定器のオフセット等の誤差がなくな
り、高精度なマスク・基板間隙が得られる。
Further, according to another embodiment of the present invention, since the gap measuring device can be easily calibrated, an error such as an offset of the measuring device is eliminated and a highly accurate mask-substrate gap can be obtained.

更に本発明の別の実施例によれば、ガラスマスクの四辺
下部を間隙測定器と干渉することなく支持できるので、
マスクのたわみが減少し(1/3以下)間隙のコントロー
ルが著しく容易になる。
Furthermore, according to another embodiment of the present invention, since the lower portions of the four sides of the glass mask can be supported without interfering with the gap measuring device,
Deflection of the mask is reduced (1/3 or less), and control of the gap becomes significantly easier.

更に本発明の別の実施例によれば、間隙測定器の簡略化
・測定範囲の縮小による高精度化が計れ安価・高精度な
装置となる。
Further, according to another embodiment of the present invention, the gap measuring device can be simplified and the measurement range can be reduced to achieve high precision, which is an inexpensive and high precision device.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例の正面図,第2図は第1図の
実施例の露光時を示す図,第3図は本発明の別の実施例
を示す平面図,第4図は第3図の側面図,第5図は本発
明の一実施例による間隙測定器の断面図,第6図は本発
明の別の実施例による間隙測定器の断面図,第7図は本
発明の更に別の一実施例による間隙測定器の正面図,第
8図は従来例を示す正面図である。 5…マスク,8…間隙測定器, 10…間隙,11…基板, 13…基板変形チャック, 14…上下動駆動部。
FIG. 1 is a front view of an embodiment of the present invention, FIG. 2 is a view showing an exposure of the embodiment of FIG. 1, FIG. 3 is a plan view showing another embodiment of the present invention, and FIG. Is a side view of FIG. 3, FIG. 5 is a sectional view of a gap measuring device according to one embodiment of the present invention, FIG. 6 is a sectional view of a gap measuring device according to another embodiment of the present invention, and FIG. FIG. 8 is a front view of a gap measuring device according to still another embodiment of the invention, and FIG. 8 is a front view showing a conventional example. 5 ... Mask, 8 ... Gap measuring device, 10 ... Gap, 11 ... Substrate, 13 ... Substrate deformation chuck, 14 ... Vertical drive unit.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/027 (56)参考文献 特開 昭60−250689(JP,A) 特開 昭49−105468(JP,A) 特公 昭63−49892(JP,B2)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Internal reference number for FI Technical indication H01L 21/027 (56) Reference JP-A-60-250689 (JP, A) JP-A-49- 105468 (JP, A) Japanese Patent Sho 63-49892 (JP, B2)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】マスク上のパターンを基板上に露光転写す
る露光装置において、上記マスクを保持するマスク保持
手段と、基板を吸着して基板を部分的に変形させる基板
変形チャックと、上記マスク保持手段と基板変形チャッ
クによってマスクと基板とが対向した状態でそれらの間
に入り込むべく移動自在に支持され、基板とマスクとの
間隙を測定する測定手段と、上記マスク保持手段と基板
変形チャックとを相対的に上下に平行移動させる上下動
手段とを備えたことを特徴とする露光装置。
1. An exposure apparatus for exposing and transferring a pattern on a mask onto a substrate, mask holding means for holding the mask, substrate deforming chuck for adsorbing the substrate to partially deform the substrate, and the mask holding device. A mask and a substrate deforming chuck, the mask and the substrate being movably supported so as to be inserted between them in a state of being opposed to each other, and a measuring unit for measuring a gap between the substrate and the mask; and the mask holding unit and the substrate deforming chuck. An exposure apparatus comprising: an up-and-down moving unit that relatively translates vertically.
【請求項2】上記測定手段は、基板とマスクとの間隙か
ら退避した際、較正できるように構成したことを特徴と
する特許請求の範囲第1項記載の露光装置。
2. The exposure apparatus according to claim 1, wherein the measuring means is configured to be calibrated when retracted from the gap between the substrate and the mask.
JP62155431A 1987-06-24 1987-06-24 Exposure equipment Expired - Lifetime JPH0693539B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62155431A JPH0693539B2 (en) 1987-06-24 1987-06-24 Exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62155431A JPH0693539B2 (en) 1987-06-24 1987-06-24 Exposure equipment

Publications (3)

Publication Number Publication Date
JPS641293A JPS641293A (en) 1989-01-05
JPH011293A JPH011293A (en) 1989-01-05
JPH0693539B2 true JPH0693539B2 (en) 1994-11-16

Family

ID=15605869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62155431A Expired - Lifetime JPH0693539B2 (en) 1987-06-24 1987-06-24 Exposure equipment

Country Status (1)

Country Link
JP (1) JPH0693539B2 (en)

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JP3301387B2 (en) * 1998-07-09 2002-07-15 ウシオ電機株式会社 Mask and work gap control method and proximity exposure apparatus in proximity exposure
JP4410714B2 (en) 2004-08-13 2010-02-03 富士フイルム株式会社 Method for producing support for lithographic printing plate
ATE395195T1 (en) 2005-04-13 2008-05-15 Fujifilm Corp METHOD FOR PRODUCING A PLATE PRINTING PLATE SUPPORT
CN102165106B (en) 2008-09-30 2014-09-17 富士胶片株式会社 Electrolytic treatment method and electrolytic treatment device
CN102460749A (en) 2009-06-26 2012-05-16 富士胶片株式会社 Light reflecting substrate and process for manufacture thereof
US20120256224A1 (en) 2009-12-25 2012-10-11 Fujifilm Corporation Insulated substrate, process for production of insulated substrate, process for formation of wiring line, wiring substrate, and light-emitting element
JP5993313B2 (en) * 2013-01-18 2016-09-14 株式会社アルバック Attitude control device
CN109581828A (en) * 2019-01-23 2019-04-05 深圳市华星光电技术有限公司 Exposure device and exposure method

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