JPH0693453A - Susceptor - Google Patents
SusceptorInfo
- Publication number
- JPH0693453A JPH0693453A JP3298263A JP29826391A JPH0693453A JP H0693453 A JPH0693453 A JP H0693453A JP 3298263 A JP3298263 A JP 3298263A JP 29826391 A JP29826391 A JP 29826391A JP H0693453 A JPH0693453 A JP H0693453A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- graphite
- film
- incident light
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、特に気相成長を行なう
際に好適に使用されるサセプタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a susceptor suitable for use in vapor phase growth.
【0002】[0002]
【従来の技術】従来、気相成長用サセプタとしては、黒
鉛又は黒鉛基材表面にガラス状炭素、熱分解黒鉛、セラ
ミック膜等で被覆したものが知られている(例えば特開
昭64ー47019号公報)。2. Description of the Related Art Conventionally, as a susceptor for vapor phase growth, there is known one in which the surface of graphite or a graphite base material is coated with glassy carbon, pyrolytic graphite, a ceramic film or the like (for example, JP-A-64-47019). Issue).
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記の
黒鉛からなるものは、ダストが発生しやすく、しかもC
VDによりウエハ上にシリコン酸化膜やシリコン窒化膜
等の各種のCVD膜を成膜する際、サセプタ表面が粗い
ために外部ヒーター加熱や高周波加熱によりサセプタに
与えられた熱がウエハに均一に伝わらず、ウエハ内ある
いはウエハ間において均一な成膜が困難である等の問題
があった。一方、ガラス状炭素で被覆したものにおいて
は、そのような欠点はないが、表面が平坦なためにサセ
プタ上に堆積するCVD膜が剥離しやすく、それが形成
膜中に取り込まれる恐れがあった。However, the above graphite material is liable to generate dust and has a C content.
When various CVD films such as a silicon oxide film and a silicon nitride film are formed on a wafer by VD, the heat applied to the susceptor by external heater heating or high frequency heating is not uniformly transferred to the wafer because the surface of the susceptor is rough. However, there is a problem that it is difficult to form a uniform film within a wafer or between wafers. On the other hand, the glass-like carbon coating does not have such a defect, but since the surface is flat, the CVD film deposited on the susceptor is easily peeled off, and there is a possibility that it is taken into the formed film. .
【0004】上記問題点を解決するため、ウエハ接触部
の面とそれ以外の面の表面粗さを変えることが提案され
ているが(特開平3ー146672号公報)、この方法
は、ウエハ接触部以外の面をウエハ部にマスキングを施
してから機械的に表面を荒らす必要があったので、生産
性に問題があった。In order to solve the above problems, it has been proposed to change the surface roughness of the surface of the wafer contact portion and the surface other than that (Japanese Patent Laid-Open No. 146672/1993). Since it is necessary to mechanically roughen the surface after masking the surface other than the surface of the wafer, there is a problem in productivity.
【0005】本発明は、以上の問題点を解決し、ウエハ
上に均一な膜が形成され、しかも堆積するCVD膜の剥
離がないサセプタを提供することを目的とするものであ
る。An object of the present invention is to solve the above problems and to provide a susceptor in which a uniform film is formed on a wafer and the deposited CVD film is not peeled off.
【0006】[0006]
【課題を解決するための手段】すなわち、本発明は、3
0deg入射光の正反射率R30が0.5〜1%であ
り、しかもθdeg入射光の正反射率Rθが次式で示さ
れる範囲にある黒鉛から構成されてなることを特徴とす
るサセプタであり、また、この黒鉛からなるサセプタに
ガラス状炭素及び/又は熱分解炭素の被膜を形成させて
なることを特徴とするサセプタである。 0.5×(θ/30)2 ≦Rθ≦1×(θ/30)2 (但し、θは30、50、80である。)That is, the present invention has three features.
The susceptor is characterized in that the regular reflectance R30 of 0 deg incident light is 0.5 to 1%, and that the regular reflectance Rθ of θ deg incident light is composed of graphite in a range represented by the following equation. Further, the susceptor is characterized in that a film of glassy carbon and / or pyrolytic carbon is formed on the susceptor made of this graphite. 0.5 × (θ / 30) 2 ≦ Rθ ≦ 1 × (θ / 30) 2 (where θ is 30, 50, 80)
【0007】以下、さらに詳しく本発明について説明す
ると、本発明で使用される黒鉛基材については特に制約
はないが、被膜形成のしやすさから密度1.65g/cm3
以上の等方性黒鉛が望ましい。Explaining the present invention in more detail below, the graphite base material used in the present invention is not particularly limited, but the density is 1.65 g / cm 3 because of the ease of film formation.
The above isotropic graphite is desirable.
【0008】黒鉛の表面状態と光沢の間には密接な関係
があり、一般に表面が平坦であれば正反射率は大きくな
り、気孔が多くなると乱反射が大きくなって正反射率は
小さくなる。正反射率の低下は入射角が小さい程乱反射
の影響が強くなる。There is a close relationship between the surface state of graphite and gloss, and generally, if the surface is flat, the specular reflectance increases, and if the number of pores increases, the diffuse reflection increases and the specular reflectance decreases. The smaller the incident angle, the stronger the influence of diffuse reflection on the decrease in the regular reflectance.
【0009】ウエハ上に均一な膜を形成させ、しかもサ
セプタ上の堆積膜の剥離を防止するには、多くの実験の
結果、30deg入射光の正反射率R30が0.5〜1
%であり、しかもθdeg入射光の正反射率Rθが上式
で示される範囲にある黒鉛であることを本発明者らは見
いだした。In order to form a uniform film on the wafer and prevent the deposited film from peeling off on the susceptor, many experiments have shown that the regular reflectance R30 of incident light of 30 deg is 0.5 to 1.
The present inventors have found that the graphite is a graphite having a regular reflectance Rθ of θ deg incident light in the range represented by the above equation.
【0010】すなわち、R30が0.5%未満では均一
な膜が生成しにくくなり、1%を越えると堆積膜が剥離
しやすくなる。一方、Rθ<0.5×(θ/30)2 で
は均一な膜が生成しにくくなり、1×(θ/30)2 <
Rθでは堆積膜が剥離しやすくなる。That is, if R30 is less than 0.5%, it is difficult to form a uniform film, and if R30 is more than 1%, the deposited film is easily peeled off. On the other hand, when Rθ <0.5 × (θ / 30) 2 , it is difficult to form a uniform film, and 1 × (θ / 30) 2 <
At Rθ, the deposited film is easily peeled off.
【0011】サセプタ表面を平坦にしてウエハ上に均一
な膜を生成させることとサセプタ表面を粗くして堆積膜
の剥離を防止することとは、相反する性質を利用するも
のであるので、現在までに両特性を備えたサセプタは開
発されなかった。しかし、本発明者らは、サセプタと堆
積膜とのアンカー効果は、サセプタの表面粗さだけでは
なくサセプタの気孔率にも大きく依存していることを見
いだしたものである。これは、原料ガスがサセプタの気
孔を通しサセプタ内部に深く侵入して反応することによ
りサセプタ内部に根をはった状態のCVD膜が形成され
たためと考えている。Since making the surface of the susceptor flat to form a uniform film on the wafer and making the surface of the susceptor rough to prevent peeling of the deposited film make use of the contradictory properties, up to now. No susceptor with both characteristics was developed. However, the present inventors have found that the anchor effect between the susceptor and the deposited film largely depends not only on the surface roughness of the susceptor but also on the porosity of the susceptor. It is considered that this is because the raw material gas penetrates deeply into the susceptor through the pores of the susceptor and reacts with the susceptor to form a rooted CVD film.
【0012】上記黒鉛の表面状態からなる本発明のサセ
プタは、その表面を機械的に研磨し正反射率を上記値よ
りも大きめにした後、温度300℃程度の空気中で加熱
し、表面を酸化消耗させることによって得ることができ
る。The susceptor of the present invention having the above-mentioned graphite surface state is mechanically polished to have a specular reflectance higher than the above value, and then heated in air at a temperature of about 300 ° C. It can be obtained by oxidative consumption.
【0013】上記黒鉛からなる本発明のサセプタにガラ
ス状炭素又は熱分解炭素の被膜を形成させることによっ
て黒鉛ダストの発生を低減することができる。Generation of graphite dust can be reduced by forming a film of glassy carbon or pyrolytic carbon on the susceptor of the present invention made of the above graphite.
【0014】ガラス状炭素又は熱分解炭素の被膜を形成
させるには、有機重合体の熱分解物を溶解してコーテイ
ングする方法(例えば特公昭52ー39684号公
報)、有機重合体又はその前駆体を溶融してコーテイン
グする方法(例えば特開昭62ー283807号公
報)、炭化水素の蒸気を熱分解する方法(例えば特開昭
64ー9900号公報)などを採用することができる。In order to form a film of glassy carbon or pyrolytic carbon, a method of dissolving and coating a pyrolyzed product of an organic polymer (for example, Japanese Patent Publication No. 52-39684), an organic polymer or a precursor thereof. A method of melting and coating (for example, JP-A-62-283807), a method of thermally decomposing a hydrocarbon vapor (for example, JP-A-64-9900) and the like can be adopted.
【0015】[0015]
【実施例】以下、実施例と比較例をあげてさらに具体的
に本発明を説明する。 実施例1〜4 比較例1〜4 特開平3ー146672号公報に示された形状を有する
CVD用サセプタ黒鉛基材(80×150×4mm)の表
面を機械研磨し、その正反射率の異なるものを数種類準
備した後、それらを温度300℃の空気中で加熱処理し
て表1に示す正反射率の異なるサセプタを製造した。EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples. Examples 1 to 4 Comparative Examples 1 to 4 The surface of a susceptor graphite base material for CVD (80 × 150 × 4 mm) having the shape disclosed in JP-A-3-146672 is mechanically polished to have different specular reflectances. After preparing several kinds of them, they were heat-treated in air at a temperature of 300 ° C. to manufacture susceptors having different regular reflectances shown in Table 1.
【0016】上記によって得られたサセプタの一部につ
いては、ポリ塩化ビニルを窒素雰囲気中500℃で熱分
解させてタール状の前駆体を製造し、それをトリクロル
エチレンに溶解して10重量%の溶液としたものを塗布
した後、真空雰囲気下、温度1000℃で焼成して3.
5μm のガラス状炭素被膜を形成させた。With respect to a part of the susceptor obtained as described above, polyvinyl chloride is pyrolyzed at 500 ° C. in a nitrogen atmosphere to produce a tar-like precursor, which is dissolved in trichloroethylene to obtain 10% by weight. After applying the solution, it is baked at a temperature of 1000 ° C. in a vacuum atmosphere.
A 5 μm glassy carbon coating was formed.
【0017】上記サセプタの性能を評価するため、拡散
炉型プラズマCVD装置を用い、4インチSiウエハを
5枚ずつサセプタにセットしてベルジャー内に入れ、外
部から300℃に加熱してサセプタ間に高周波13.5
6MHzをかけ、モノシランとアンモニアを原料とし、
Siウエハ上にシリコン窒化膜を約1.2μm 堆積させ
たときの膜付着力と膜に混入した異物量及び顕微鏡観察
による膜の均一性を測定した。それらの結果を表1に示
す。In order to evaluate the performance of the susceptor, a diffusion furnace type plasma CVD apparatus was used to set five 4-inch Si wafers in the susceptor and put them in a bell jar. High frequency 13.5
Apply 6MHz, use monosilane and ammonia as raw materials,
The film adhesion when depositing a silicon nitride film of about 1.2 μm on a Si wafer, the amount of foreign matter mixed in the film, and the uniformity of the film by microscopic observation were measured. The results are shown in Table 1.
【0018】なお、付着力は、シリコン窒化膜にエポキ
シ系接着剤を用いてSUS製金具を接着し試料を固定し
た後、SUS製金具を引張りシリコン窒化膜が剥離した
際の引張り力を測定することにより、また、異物量は、
光学顕微鏡により測定し評価した。The adhesive force is measured by pulling the SUS metal fitting and then peeling off the silicon nitride film after adhering the SUS metal fitting to the silicon nitride film with an epoxy adhesive to fix the sample. Therefore, the amount of foreign matter is
It was measured and evaluated by an optical microscope.
【0019】[0019]
【表1】 [Table 1]
【0020】表1から、本発明の表面状態を満たす黒鉛
からなるサセプタは、ウエハ上に均一な膜が形成され、
しかもサセプタ上に堆積する膜の付着力も大きくなるこ
とがわかる。さらに、ガラス状炭素で被覆したものは異
物量が少なくなる。From Table 1, in the susceptor made of graphite satisfying the surface condition of the present invention, a uniform film is formed on the wafer,
Moreover, it can be seen that the adhesive force of the film deposited on the susceptor also increases. Further, the amount of foreign matter is reduced in the case of coating with glassy carbon.
【0021】[0021]
【発明の効果】本発明のサセプタによれば、ウエハ上に
均一な膜が形成され、しかもサセプタ上に堆積する膜の
剥離もなくすることができる。According to the susceptor of the present invention, a uniform film is formed on the wafer, and the film deposited on the susceptor can be eliminated.
Claims (2)
0.5〜1%であり、しかもθdeg入射光の正反射率
Rθが次式で示される範囲にある黒鉛から構成されてな
ることを特徴とするサセプタ。 0.5×(θ/30)2 ≦Rθ≦1×(θ/30)2 (但し、θは30、50、80である。)1. A specular reflectance R30 of 30 deg incident light is 0.5 to 1%, and the specular reflectance Rθ of θ deg incident light is composed of graphite having a range represented by the following equation. And a susceptor. 0.5 × (θ / 30) 2 ≦ Rθ ≦ 1 × (θ / 30) 2 (where θ is 30, 50, 80)
素の被膜を形成させてなることを特徴とする請求項1記
載のサセプタ。2. The susceptor according to claim 1, wherein the graphite is coated with glassy carbon and / or pyrolytic carbon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3298263A JPH0693453A (en) | 1991-10-17 | 1991-10-17 | Susceptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3298263A JPH0693453A (en) | 1991-10-17 | 1991-10-17 | Susceptor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0693453A true JPH0693453A (en) | 1994-04-05 |
Family
ID=17857369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3298263A Pending JPH0693453A (en) | 1991-10-17 | 1991-10-17 | Susceptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0693453A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480182B1 (en) * | 2002-01-04 | 2005-03-31 | 주성엔지니어링(주) | Oxidation prevention-treated wafer susceptor |
KR100520914B1 (en) * | 2001-07-30 | 2005-10-11 | 도시바세라믹스가부시키가이샤 | Wafer processing member |
JP2006135290A (en) * | 2004-10-07 | 2006-05-25 | Ibiden Co Ltd | Semiconductor manufacturing device and member therefor |
JP2007012933A (en) * | 2005-06-30 | 2007-01-18 | Ibiden Co Ltd | Semiconductor manufacturing device and component therefor |
-
1991
- 1991-10-17 JP JP3298263A patent/JPH0693453A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100520914B1 (en) * | 2001-07-30 | 2005-10-11 | 도시바세라믹스가부시키가이샤 | Wafer processing member |
KR100480182B1 (en) * | 2002-01-04 | 2005-03-31 | 주성엔지니어링(주) | Oxidation prevention-treated wafer susceptor |
JP2006135290A (en) * | 2004-10-07 | 2006-05-25 | Ibiden Co Ltd | Semiconductor manufacturing device and member therefor |
JP2007012933A (en) * | 2005-06-30 | 2007-01-18 | Ibiden Co Ltd | Semiconductor manufacturing device and component therefor |
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