JPH0691040B2 - Dry etching equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrode of a dry etching apparatus.

[Conventional technology]

Conventionally, in a dry etching apparatus used for manufacturing a semiconductor device, both counter electrodes to which a high frequency voltage is applied are flat or cylindrical.

[Problems to be solved by the invention]

Among the conventional dry etchers described above, in the case of the former parallel plate electrode, in order to increase the number of semiconductor substrates that can be processed at the same time and improve the throughput, it is necessary to increase the plane area of the device, and the installation space efficiency is increased. There was a drawback that it became worse.

In the case of the latter cylindrical electrode, it is difficult to rotate or translate the electrode on which the semiconductor substrate is arranged in the etching chamber, and one electrode is rotated like the parallel plate electrode type, There is a drawback that the etching uniformity cannot be improved.

It is an object of the present invention to provide a dry etching apparatus which does not reduce the installation space efficiency when the throughput is improved or when the diameter of a welly is increased and the etching uniformity is not reduced to a level lower than that of a parallel plate electrode type. It is in.

[Means for solving problems]

To achieve the above object, a dry etching apparatus according to the present invention holds a semiconductor substrate on one electrode of a counter electrode in an etching chamber, applies a high frequency voltage between the electrodes, and introduces a gas under a vacuum. Is a dry etching apparatus for dry-etching a substrate on an electrode by excitation or ionization of the counter electrode, wherein the counter electrode is composed of an upper electrode and a lower electrode which are vertically opposed to each other, and the upper electrode is a reaction gas The lower surface has a spherically curved concave surface with an inlet, and the lower electrode has a spherically curved convex surface on the upper surface. Is a mounting surface on which a plurality of semiconductor substrates are mounted.

〔Example〕

 Next, embodiments of the present invention will be described with reference to the drawings.

In FIG. 1, the dry etching apparatus of this embodiment is
A spherically curved anode 3 and a spherically curved cathode 4 are arranged opposite to each other inside an etching chamber 2 which is held in a vacuum by a vacuum pump 1, and the cathode 4 is connected to a motor 6 via a rotary shaft 5. , Can be rotated during etching. That is, the anode 3 is the upper electrode and the cathode 4 is the lower electrode, and the curved concave surface of the anode 3 and the curved convex surface of the cathode 4 are vertically opposed to each other, and the semiconductor substrate 9 is mounted on the curved convex surface of the cathode 4. The anode 3 has a mounting surface and a reaction gas inlet 7 is opened at the center of the curved concave surface of the anode 3. The curved concave surface of the anode 3 covers the entire curved convex surface of the cathode 4. During the etching process, a gas is introduced through the gas inlet 7 between the electrodes, and a high frequency power source 8 applies a high frequency voltage between the electrodes to etch the surface of the semiconductor substrate 9 disposed on the cathode surface.

According to the present invention, since the anodes 3 and the cathodes 4 serving as the counter electrodes are curved in a spherical shape, the number of semiconductor substrates 9 installed on the surface of the cathode 4 is larger than that in the case of a flat surface. Further, since both electrodes 3 and 4 are curved in a spherical shape, the cathode 4 can be rotated without interfering with the other anode 3, so that the etching uniformity can be maintained.

In the above embodiment, the connection of the high frequency power supply can be changed to the anode instead of the cathode, and the number of semiconductor substrates arranged on the electrode surface can be freely selected.

〔The invention's effect〕

As described above, according to the present invention, a spherical surface is used for the electrode surface, and due to the property of the spherical surface, whether it is the apex of the spherical surface or the lower edge portion, it can be used as a mounting surface of the substrate. There is no distinction, so that there is an effect that the mounting surface of the substrate can be increased by using the entire surface evenly.

[Brief description of drawings]

FIG. 1 is a schematic sectional view for explaining an embodiment of the present invention. 1 ... vacuum pump, 2 ... etching chamber, 3 ... anode, 4 ... cathode, 5 ... rotating shaft, 6 ... motor,
7 ... Gas inlet, 8 ... High frequency power source, 9 ... Semiconductor substrate.

Claims (1)

[Claims] 1. A semiconductor substrate is held on one of opposing electrodes in an etching chamber, a high frequency voltage is applied between the electrodes, and the substrate on the electrodes is dried by exciting or ionizing a gas introduced under vacuum. In a dry etching apparatus for etching, a counter electrode is composed of an upper electrode and a lower electrode which are vertically opposed to each other, and the upper electrode has a spherically curved concave surface in which a reaction gas inlet is opened. It has on the bottom surface, the lower electrode has a spherical curved convex surface on the upper surface, and it is covered by the spherical curved concave surface of the upper electrode, and the spherical curved convex surface of the lower electrode is a mounting surface on which multiple semiconductor substrates are mounted. The dry etching apparatus is characterized in that