JPH0690150A - Semiconductor switch - Google Patents

Abstract

PURPOSE:To provide the semiconductor switch which can provide a current limiting characteristic and can reduce the loss of power. CONSTITUTION:The source of a first MOSFET 10 and the source of a second MOSFET 12 are mutually connected in common, and an input part 15 of a control part 14 is connected to such a common junction (a). One terminal 16 of a current passage provided at the control part 14 is connected between the gate of the first MOSFET 10 and an input terminal G1, and another terminal 17 is connected to a terminal D2 connected to the drain of the second MOSFET 12. Then, when the potential of the common junction (a) gets higher than a prescribed potential, this control part 14 is conducted, a current flows from the input terminal G1 to the terminal D2, and the first MOSFET 10 is turned off. Thus, a current ID1 is monitored by an ON resistor RON of the second MOSFET 12, and the current limiting characteristic is provided for the current ID1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor switch, and more particularly to a semiconductor switch capable of limiting an output current.

[0002]

2. Description of the Related Art Reference: Edward T. Rodriguez. “OPTI
CALLY COUPLED POWER MOSFET TECHNO-LOGY: A MONOLITH
IC REPLACEMENT FOR ELECTROMECHANICAL RELAYS ”ELEC
TRO 8-3 ', Session Record 7/3, IEEE1983 FIG. 12 is a diagram showing a circuit configuration of the switch shown in the above-mentioned reference. The operation of the switch shown in FIG. 12 will be described.

When light 100 is emitted from the light emitting diode LED to the photodiode array PDA1 or PDA2, a current is supplied from the photodiode array PDA1 to the MOSFET 10.
Flowing to the gates of 2 and 104, MOSFET1
02 and 104 are turned on. At this time, MOSFE
The terminal D1 connected to the drain of T102 and the MOSFE
When a voltage V _D1D2 having a high potential at the terminal D1 is applied between the terminal D2 and the terminal D2 connected to the drain of T104,
1 to MOSFET 102-resistor 106-resistor 108-
The drain current I _D1 flows through the path of the MOSFET 104 to the terminal D2. Drain current I _D1 is proportional to the voltage V _D1D2, when the voltage V _D1D2 increases, the drain current I _D1 is also increased, (hereinafter referred to as the current I _D1O) with values above does not flow. This is because the potential difference (R106 × I _D1 ) across the resistor 106 is V _BE (0.
5 to 0.7 V) or higher), the transistor 110
Is turned on, and the current that should flow to the gate of the MOSFET 102 flows between the collector and the emitter of the transistor 110 and acts to turn off the MOSFET 102.

Further, in the above switch, when the voltage V _D1D2 having the terminal D2 at a high potential is generated, the drain current I _D2 flows from the terminal D2 to the terminal D1. In this case, the transistor 112 operates in the same manner as the transistor 110 described above, so that the drain current I _D2 does not flow at a certain value, that is, I _D2O or more.

[0005] Figure 13 is a diagram showing a current I _D1 and I _D2 flows between terminals D1~ terminal D2 of the switch, the relationship between the voltage V _D1D2 applied between terminals D1~ terminal D2.

As shown in FIG. 13, according to the above switch, when the voltage V _D1D2 exceeds a certain value, the current I _D1 (or I _D2 ) becomes constant at I _D1O (or I _D2O ) and the current limit The characteristics can be obtained. The photodiode array PDA2 and MOSFET 114 are turn-off circuits.

[0007]

As described above, in the switch shown in the reference, the drain current is monitored by the resistor 106 or the resistor 108 in order to obtain the current limiting characteristic. That is, it is necessary to pass the drain current through the resistors 106 and 108, which causes power loss.

The present invention has been made in view of the above points, and an object thereof is to provide a semiconductor switch which can obtain a current limiting characteristic and reduce power loss.

[0009]

In the semiconductor switch according to the present invention, the current paths of the first and second switch sections are commonly connected to each other, and the input section of the control section is connected to the common connection point. . Then, one end of the current path of the control section is connected between the input section and the input terminal of the first switch, and the other end is connected to the open side of the current path of the second switch. Connected to the connected terminal. Further, the control unit is configured to conduct when the potential of the common connection point becomes equal to or higher than a predetermined potential and to flow a current from the input terminal to the terminal, and the first switch unit is turned off. It was to so.

[0010]

According to the above semiconductor switch, the input section of the control section is connected to the common connection point of the current paths of the first and second switch sections. Then, the control unit detects the potential at the common connection point, and when the potential becomes equal to or higher than a predetermined potential, the control unit is brought into conduction and a current flows from the input terminal to the terminal.

That is, the ON resistance of the switch unit
The current flowing between the switch section and the second switch section can be monitored, and it is not necessary to attach a resistor for monitoring the current as in the conventional case. Therefore, current limiting characteristics can be obtained without inserting a resistor between the current paths of the two switch parts, and
Power loss is also reduced.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings. In this description, common parts are denoted by common reference symbols throughout the drawings, and repeated description will be avoided. 1 is a block diagram showing the configuration of a semiconductor switch according to a first embodiment of the present invention, FIG.
FIG. 3 is a circuit diagram showing an example of a circuit configuration of the semiconductor switch shown in FIG. 1.

As shown in FIG. 1, an N-channel enhancement type MOSFET (hereinafter referred to as NMOS) 10
Has its drain connected to terminal D1 and its source is NMO.
The source is connected to the source of S12, and the gate is connected to the terminal G1. The drain of the NMOS 12 is connected to the terminal D2, and the gate is connected to the terminal G2. NMOS 10
The control terminal 15 of the control circuit 14 is connected to a common connection point a between the source of the source and the source of the NMOS 12. One end 16 of the current path of the control circuit 14 is connected to the terminal G1 and the other end 17 is connected to the terminal D2. The circuit operation of the above switch will be described.

First, when voltages are supplied to the terminals G1 and G2, both the NMOS 10 and the NMOS 12 are turned on. At this time, the terminal D1 is connected between the terminals D1 and D2.
When a voltage V _D1D2 having a high potential is applied, a drain current I _D1 flows from the terminal D1 to the terminal D2. As a result, the potential at the common connection point a is I due to the _ON resistance R _{ON of the} NMOS 12.
_D1 x R _ON . The control circuit 14 detects the potential I _D × R _ON at the common connection point a. Common connection point a potential I _D1 ×
When R _ON exceeds a predetermined value, the control circuit 14 turns on,
A current is passed from the terminal G1 to the terminal D2 to lower the gate voltage of the NMOS 10 to turn off the NMOS 10. That is, when the voltage V _D1D2 exceeds a certain value, the drain current I _D1 becomes constant at the current I _D1O and exhibits the current limiting characteristic.

According to the semiconductor switch having the above structure, the drain current can be monitored by the ON resistance of the NMOS 12. Therefore, the source of the NMOS 10 and the NM
It is not necessary to insert a drain current monitor resistor between the source of the OS 12 and the power loss can be reduced.

As a concrete example of the control circuit 14, as shown in FIG. 2, the base B is connected to the control terminal 15, the collector C is connected to one end 16 of the current path, and the emitter E is the other end of the current path. NPN bipolar transistor 18 connected to 17
Is. When the transistor 18 is formed of silicon, the value at which the control circuit 14 is turned on is such that its V _BE is 0.5.
It becomes when it is ~ 0.7V. Hereinafter, V _BE is defined as the voltage between the base and the emitter when the transistor is turned on. Figure 3
4 is a block diagram showing a configuration of a semiconductor switch according to a second embodiment of the present invention, and FIG. 4 is a circuit diagram showing an example of a circuit configuration of the semiconductor switch shown in FIG.

As shown in FIG. 3, in addition to the structure of the semiconductor switch shown in FIG.
The common connection point with the source of S12, a'in the figure, the second
The control terminal 15 'of the control circuit 14' is connected, one end 16 'of the current path of the second control circuit 14' is connected to the terminal G2, and the other end 17 'is connected to the terminal D1.

According to the semiconductor switch having the above structure, the voltage V between the terminals D1 and D2, with the terminal D2 at a high potential, is applied.
_When the drain current I _D2 flows from the terminal D2 to the terminal D1 by applying _D1D2 , the second control circuit 14 ′ detects the potential I _D2 × R _ON ′ at the common connection point a ′. Therefore, the drain current I _D2 is similar to the current I _D1 becomes more than a certain value voltage V _D1D2, becomes constant at a certain current I _{D2 O,} drain currents I _D1 and I _D2, the current limiting characteristic shown in FIG. 13 Will be shown.

As shown in FIG. 4, a concrete example of the second control circuit 14 'is that the base B is connected to the control terminal 15', the collector C is connected to one end 16 'of the current path, and the emitter E is connected. Is an NPN bipolar transistor 20 in which is connected to the other end 17 'of the current path. When the transistor 20 is formed by using silicon, the value of the second control circuit 14 ′ turned on is V _BE , that is, 0.5 to 0.7 V.
FIG. 5 is a circuit diagram showing an example of use of a semiconductor switch according to the second embodiment of the present invention.

As shown in FIG. 5, the terminals G1 and G2 are connected to each other, the terminal G is provided at this common connection point b, and the anode 22 of the photodiode array PDA is connected to this terminal G. To do. Also, the source of the NMOS 10 and the NMOS
A terminal S is provided at a common connection point with the 12 sources, a ″ in the figure, and the cathode 23 of the photodiode array PDA is connected to
Connect to this terminal S. Photodiode array PDA
Receives the optical signal 24 emitted from the light emitting diode LED and generates a photoelectromotive force between the anode 22 and the cathode 23, and the currents I _G1 and I _G2 to the gates of the NMOS 10 and the NMOS 12 are generated. Supply each.

According to the semiconductor switch having the above-described structure, the semiconductor switch is turned on / off by the optical signal from the light emitting diode LED, and each of the current I _D1 and the current I _D2 has a current limiting characteristic as shown in FIG. Can be made. Figure 6
It is a circuit diagram of a semiconductor switch according to a third embodiment of the present invention. As shown in FIG. 6, a resistor 25 is inserted between the source of the NMOS 10 and the connection point a '.
A resistor 26 is inserted between the source and the connection point a.

According to the semiconductor switch having the above-mentioned structure, by adding the resistors 25 and 26, respectively, the limiting current values I _D1O and I _D1 of the current I _D1 and the current I _D2, respectively.
_D2O can be controlled together. A specific example of current limitation by the resistors 25 and 26 will be described.

The value of the _ON resistance R _ON ′ of the NMOS 10 is set to 4
Omega, 4ohm the value of the on-resistance R _ON of the NMOS 12, 0.5V to V _BE of the transistor 18, it is assumed respectively 0.5V and V _BE of the transistor 20. First, when the resistors 25 and 26 are not provided, that is, the limiting current values I _D1O and I _D2O of the circuit shown in FIG. 5 are: I _D1O = V _BE / R _ON (1) = 125 mA I _D2O = V _BE / R _ON '... (2) = 125 mA. That is, the limiting current values I _D1O and I _D2O are V
_BE and R _ON or R _ON ′ are uniquely determined.

Here, the limiting current values I _D1O and I _D2O are _set to 125
When it is desired to control the current to be less than mA, the resistance of the source of the NMOS 10 and the connection point a ′ and the NMOS 1 are set as in the circuit shown in FIG.
If the two _sources and the connection point a are respectively inserted, the limiting current values I _D1O and I _D2O are I _D1O = V _BE / (R _ON + R26) (3) I _D2O = V _BE / (R _ON ′) + R25) (4) {(3) In the equation (4), R25 represents the resistance value of the resistor 25, and R26 represents the resistance value of the resistor 26. }

[0025] That is, the limiting current values I _D1O , I
_D2O is determined by V _BE and a combined resistance R of R _ON and R ₂₆ , or a combined resistance R ′ of R _ON ′ and R 25. As an example, when it is desired to set I _D1O and I _D2O to 100 mA, respectively, R26 = (V _BE / I _D1D2O ) -R _ON (3 ') = (0.5 / 0.1) _-4 = 1 R25 = _{(V bE / I D1D2O) -} R oN '... (4') = (0.5 / 0.1) - 4 = 1 above, by causing each with its resistance 1Ω resistor 25 and 26, A limiting current value of 100 mA can be realized. Further, in order to realize the limiting current value of 100 mA with the conventional switch shown in FIG. 12, I _D1O = V _BE / R106 (5) R106 = V _BE / I _D1O = 0.5 / 0.1 = 5 I _D1O = V _BE / R108 (6) R108 = V _BE / I _D1O = 0.5 / 0.1 = 5 As _described above, the resistors 106 and 108 each have 5 Ω.
Must have resistance.

In this way, when the limiting current value of 100 mA is realized, the resistance increase between the terminals D1 and D2 with respect to the total ON resistance is 10 Ω in the conventional switch, whereas the switch according to the present invention. 2 Ω is required, which proves that the switch according to the present invention can reduce power loss as compared with the conventional switch. FIG. 7 is a circuit diagram of a semiconductor switch according to the fourth embodiment of the present invention.

As shown in FIG. 7, the first switch section 30
Is composed of an NMOS 10 and an NPN bipolar transistor 20. The drain of the NMOS 10 is connected to the emitter E of the transistor 20, its source is connected to the base B of the transistor 20, and its gate is connected to the collector C of the transistor 20. NM
The terminal D1 is connected to a connection point d between the drain of the OS10 and the emitter E of the transistor 20, and the terminal S1 is connected to a connection point e between the source of the NMOS 10 and the base B of the transistor 20. A terminal G1 is connected to a connection point f between the gate and the collector C of the transistor 20.

The second switch section 30 'includes an NMOS 12
And an NPN bipolar transistor 18. The drain of the NMOS 12 is connected to the emitter E of the transistor 18, and its source is the transistor 18.
Connected to base B of the gate of the transistor 18
Connected to the collector C of. A terminal D2 is connected to a connection point g between the drain of the NMOS 12 and the emitter E of the transistor 18, and a terminal S2 is connected to a connection point h between the source of the NMOS 12 and the base B of the transistor 18, A terminal G2 is connected to a connection point j between the gate and the collector C of the transistor 18. Terminal S
2 is connected to the terminal S1. Also, terminal G
1 and the terminal G2 are connected to each other at a common connection point b, and a common terminal G is provided. The circuit operation of the above switch will be described.

First, when a voltage is supplied to each terminal G, both the NMOS 10 and the NMOS 12 are turned on. At this time, between the terminals D1 to D2, when a voltage is applied to V _D1D2 in which the terminal D1 and a high potential, a drain current flows I _D1 toward the terminal D1 to terminal D2. The potential at the connection point h depends on the drain current I _D1 and the on-resistance R of the NMOS 12.
_{With ON} , I _D1 × R _ON . When this potential I _D1 × R _ON exceeds V _{BE of the} transistor 18, the transistor 1
8 turns on, current flows from terminal G1 to terminal D2, and N
The gate potential of the MOS 10 is lowered, and the NMOS 10 is turned off. Therefore, similarly to the first to third embodiments, when the voltage V _D1D2 exceeds a certain value, the drain current I _D1 becomes constant at the current I _D1O and exhibits a current limiting characteristic.
Further, when the voltage V _D1D2 with the terminal D2 having a high potential is applied, the transistor 20 operates to turn off the NMOS 12. Therefore, the drain current I _D2 is also the voltage V _D1D2
When the value exceeds a certain value, the current I _D2O becomes constant and the current limiting characteristic is exhibited. Therefore, the current limiting characteristic as shown in FIG. 13 is obtained.

The first switch section 30 and the second switch section 30 'are each composed of, for example, one chip, and the circuit shown in FIG.
It is realized by a so-called multi-chip type package in which a plurality of chips are accommodated in one package. In this case, the connection between the terminal S1 of the first switch section 30 and the terminal S2 of the second switch section 30 ', and the first input section G
The connection between the first input section G2 and the first input section G2 is, for example, a print box.
Conductive layer formed on the chip, or wiring formed outside the chip such as a bonding wire.

It is also possible to integrate the circuit shown in FIG. 7 on one chip. In this case, the connection between the terminal S1 and the terminal S2 and the connection between the first input portion G1 and the second input portion G2 are performed in the internal wiring layer formed in the chip. FIG. 8 is a cross-sectional view showing the structure of a semiconductor chip that constitutes the first switch section 30 and the second switch section 30 '.

As shown in FIG. 8, a P type diffusion layer (base) 42 is formed in an N type silicon substrate (emitter and drain) 40. An N-type diffusion layer (source) 44 and an N-type diffusion layer (collector) 46 are formed in the P-type diffusion layer 42. A channel layer 47 is formed in the P type diffusion layer 42 between the N type substrate 40 and the N type diffusion layer 44. A gate electrode 50 is formed on the channel layer 47 via an insulating film 48 made of an oxide film or the like.
Are formed. A drain electrode 52 is formed on the N-type substrate 40 so as to be electrically connected to it. On the P-type diffusion layer 42 and the N-type diffusion layer 44, a source electrode 54 is formed so as to be electrically connected to them. A collector electrode 56 is formed on the N-type diffusion layer 46 so as to be in conduction therewith. The terminal G1 (or G2) is connected to the gate electrode 50 and the collector electrode 56, respectively, the terminal D1 (or D2) is connected to the drain electrode 52, and the terminal S1 (or S2) is connected to the source electrode 54. It
FIG. 9 is a circuit diagram showing a usage example of the semiconductor switch according to the fourth embodiment of the present invention.

As shown in FIG. 9, the terminals G1 and G2 are connected to each other, the terminal G is provided at this common connection point b, and the anode 22 of the photodiode array PDA is connected to this terminal G. To do. Further, a terminal S is provided at the common connection point k between the terminals S1 and S2, and the cathode 23 of the photodiode array PDA is connected to this terminal S. The photo diode array PDA receives the optical signal 24 emitted from the light emitting diode LED and generates a photo-electromotive force between the node 22 and the cathode 23 of the photo diode, and the NMOS 10 and the NMOS 12 are provided.
The signals I _G1 and I _G2 are supplied to the gates of.

According to the semiconductor switch having the above structure, the structure shown in FIG.
Similar to the switch shown in ( ₁₎ , it can be turned on / off by an optical signal from the light emitting diode LED, and each of the current I _D1 and the current I _D2 can have a current limiting characteristic. FIG. 10 is a circuit diagram of a semiconductor switch according to the fifth embodiment of the present invention. As shown in FIG.
A resistor 60 is inserted between the source of S10 and the connection point e, and a resistor 61 is inserted between the source of the NMOS 12 and the connection point h.
Has been inserted.

According to the semiconductor switch having the above structure, the third
Similarly to the switch according to the embodiment of the present invention, by controlling the resistance value R60 of the resistor 60 and the resistance value R61 of the resistor 61 and changing the combined resistances R and R ', the limiting current values I _D1O and I _D2O are controlled. You can FIG. 11 shows the fifth
FIG. 6 is a cross-sectional view showing the structure of a semiconductor chip that constitutes a first switch section 30 and a second switch section 30 ′ in the example of FIG.

As shown in FIG. 11, an N type low impurity concentration region 62 is formed in the N type diffusion layer 44 (source) between the source electrode 54 and the channel 47. . The region 62 has a high resistance value and becomes the resistor 60 (or the resistor 61) shown in FIG. Further, by changing the impurity concentration of the region 62, the resistance value R6 of the resistor 60 is changed.
0 (or the resistance value R61 of the resistor 61) can be controlled.

According to the semiconductor switch of the present invention, as described in the first to fifth embodiments, FIG.
It is possible to reduce power consumption more than the conventional switch shown in FIG. Furthermore, the following effects can be obtained from the present invention. When the switch shown in FIG. 12 is formed on a printed board, for example, the resistors 106 and 1
An external resistance element is used for 08.

In this respect, the semiconductor switch according to the present invention can be formed on, for example, a print board by using only two MOSFETs and two bipolar transistors, and the number of parts can be reduced.

In the switch shown in FIG. 7, the breakdown voltage between the emitter and the base of the transistor is the same as the breakdown voltage between the source and the drain of the MOSFET, and the breakdown voltages can be matched.

Further, since the limiting current value is determined by the on-resistance of the MOSFET and the V _BE of the transistor, V _BE is lowered in a high temperature state, and the effect of working to reduce the limiting value of the current can be obtained.

[0041]

As described above, according to the present invention, it is possible to provide the semiconductor switch which can obtain the current limiting characteristic and reduce the power loss.

[Brief description of drawings]

FIG. 1 is a block diagram showing a configuration of a semiconductor switch according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a circuit configuration example of the semiconductor switch shown in FIG.

FIG. 3 is a block diagram showing a configuration of a semiconductor switch according to a second embodiment of the present invention.

4 is a circuit diagram showing a circuit configuration example of the semiconductor switch shown in FIG.

FIG. 5 is a circuit diagram showing an example of use of a semiconductor switch according to a second embodiment of the present invention.

FIG. 6 is a circuit diagram of a semiconductor switch according to a third embodiment of the present invention.

FIG. 7 is a circuit diagram of a semiconductor switch according to a fourth embodiment of the present invention.

8 is a cross-sectional view showing the structure of a semiconductor chip that constitutes the first and second switch parts shown in FIG. 7.

FIG. 9 is a circuit diagram showing an example of use of a semiconductor switch according to a fourth embodiment of the present invention.

FIG. 10 is a circuit diagram of a semiconductor switch according to a fifth embodiment of the present invention.

11 is a cross-sectional view showing the structure of a semiconductor chip that constitutes the first and second switch parts shown in FIG.

FIG. 12 is a diagram showing a circuit configuration of a conventional switch.

FIG. 13 is a diagram showing current limiting characteristics of the switches shown in FIGS. 3 to 7, FIG. 9, FIG. 10 and FIG.

[Explanation of symbols]

10, 12 ... N-channel-enhancement type MOSF
ET, 14, 14 '... Control circuit, section, 18, 20 ... NP
N-type bipolar transistor, 25, 26, ... Resistor, 4
0 ... N-type silicon substrate (emitter, drain), 42 ...
P-type diffusion layer (base), 44 ... N-type diffusion layer (source),
46 ... N-type diffusion layer (collector), 48 ... Insulating film, 50 ...
Gate electrode, 60, 61 ... Resistor, 62 ... N ^- type low impurity concentration region, D1, D2, S ... Terminal, G1, G2, G ... Input terminal, PDA ... Photodiode array, LED ... Light emitting diode -Do.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI Technical indication location H03K 17/78 J 9383-5J (72) Inventor Shinichi Norio 760, Kakugawa, Buzen, Fukuoka Prefecture Buzen Toshiba Electronics Co., Ltd.

Claims (18)

[Claims] 1. A first switch section having a current path and an input section, one end of which is connected to a first terminal, and the input section being connected to a first input terminal; An input section is provided, one end of the current path is connected to the second terminal, the other end of the current path is connected to the other end of the current path of the first switch section, and the input section is connected to the second terminal.
A second switch section connected to the input terminal of the first switch section, and a current path and an input section, the input section including a current path of the first switch section and a current path of the second switch section. Is connected to a common connection point of the first switch section, one end of the current path is connected to a connection point between the input section of the first switch section and the first input terminal, and the other end of the current path is connected to the second connection section. A control unit connected to the terminal is provided, the control unit detects the potential of the common connection point connected to the input unit, and when the potential reaches a predetermined potential, the control unit inputs the potential to the first input terminal. The signal is applied to the second terminal from the input section of the first switch section to the second terminal. 2. The control unit further comprises a resistance part inserted between the other end of the current path of the first switch part and the other end of the current path of the second switch part. The semiconductor switch according to claim 1, wherein the input section is connected to a common connection point between the other end of the current path of the first switch section and the resistance section. 3. The first switch section comprises a first MOSFET whose input section is a gate, and the second switch section is a second MOSFET whose input section is a gate.
3. The semiconductor switch according to claim 1, wherein the control section is a bipolar transistor whose input section is a base. 4. An anode of a light receiving element that receives a light signal from a light emitting element and generates a photoelectromotive force is connected to each of the first input terminal and the second input terminal. 3. The semiconductor switch according to claim 1, wherein the cathode is connected to the common connection point. 5. An anode of a light receiving element for receiving a light signal from the light emitting element and generating a photoelectromotive force is connected to each of the first input terminal and the second input terminal. 4. The semiconductor switch according to claim 3, wherein the cathode is connected to the common connection point. 6. A first switch section having a current path and an input section, one end of which is connected to the first terminal, and the input section being connected to the first input terminal; An input section is provided, one end of the current path is connected to the second terminal, the other end of the current path is connected to the other end of the current path of the first switch section, and the input section is connected to the second terminal. A second switch section connected to the input terminal of the first switch section, and a current path and an input section, the input section including a current path of the first switch section and a current path of the second switch section. Is connected to a common connection point of the first switch section, one end of the current path is connected to a connection point between the input section of the first switch section and the first input terminal, and the other end of the current path is connected to the second connection section. A first control part connected to the terminal, and a current path and an input part, the input of which Is connected to a common connection point between the current path of the first switch section and the current path of the second switch section, and one end of the current path is connected to the input section of the second switch section and the second switch section. A second control unit connected to a connection point with the input terminal and having the other end of its current path connected to the first terminal is provided, and the first control unit is the common unit connected to the input unit. The potential of the connection point is detected, and when the potential reaches a predetermined potential, the signal input to the first input terminal is supplied to the first input terminal.
Is configured to flow from the input section of the switch section to the second terminal, and the second control section detects the potential of the common connection point connected to the input section, and this potential is a predetermined potential. , The signal input to the second input terminal is
A semiconductor switch characterized in that it is configured to flow from an input section of the second switch section to the first terminal. 7. A first resistance part and a second resistance part inserted between the other end of the current path of the first switch part and the other end of the current path of the second switch part. 7. The input parts of the first and second control parts are respectively connected to a common connection point of the first resistance part and the second resistance part. Semiconductor switch. 8. The first switch section comprises a first MOSFET whose input section is a gate, and the second switch section is a second MOSFET whose input section is a gate.
The first control unit is a first bipolar transistor having its input portion as a base, and the second control unit is a second bipolar transistor having its input portion as a base. 7. A bipolar transistor comprising a bipolar transistor.
Or the semiconductor switch according to any one of 7 above. 9. An anode of a light receiving element for generating a photoelectromotive force in response to an optical signal from the light emitting element is connected to each of the first input terminal and the second input terminal. 8. The semiconductor switch according to claim 6, wherein the cathode is connected to the common connection point. 10. An anode of a light receiving element for generating a photoelectromotive force in response to an optical signal from the light emitting element is connected to each of the first input terminal and the second input terminal. 9. The semiconductor switch according to claim 8, wherein the cathode is connected to the common connection point. 11. A current path and an input part are provided, one end of the current path is connected to a first terminal, and the input part is connected to the first terminal.
Has a first switch portion connected to the input terminal of, and a current passage and an input portion, one end of the current passage is connected to the second terminal, and the other end of the current passage is connected to the first switch portion. Connect to the other end of the current path, and connect its input to the second
A second switch section connected to the input terminal of the first switch section, and a current path and an input section, the input section including a current path of the first switch section and a current path of the second switch section. Is connected to a common connection point of the first switch section, one end of the current path is connected to a connection point between the input section of the first switch section and the first input terminal, and the other end of the current path is connected to the second connection section. A first controller connected to the terminal, and a current path and an input section, the input section being connected to a common connection point between the current path of the first switch section and the current path of the second switch section In addition, one end of the current path is connected to a connection point between the input section of the second switch section and the second input terminal, and the other end of the current path is connected to the first terminal. And a first input terminal and a second input. A child is connected to each other through a common terminal, and the first control unit detects the potential of the common connection point connected to the input unit, and when the potential reaches a predetermined potential, the first input The signal input to the terminal is the first
Is configured to flow from the input section of the switch section to the second terminal, and the second control section detects the potential of the common connection point connected to the input section, and this potential is a predetermined potential. , The signal input to the second input terminal is
A semiconductor switch characterized in that it is configured to flow from an input section of the second switch section to the first terminal. 12. A first resistance part and a second resistance part inserted between the other end of the current path of the first switch part and the other end of the current path of the second switch part. The input parts of the first and second control parts are respectively connected to a common connection point of the first resistance part and the second resistance part. Semiconductor switch. 13. The first switch section comprises a first MOSFET whose input section is a gate, and the second switch section is a second MOSFET whose input section is a gate.
The first control unit is a first bipolar transistor having its input portion as a base, and the second control unit is a second bipolar transistor having its input portion as a base. 2. A bipolar transistor, which comprises a bipolar transistor.
13. The semiconductor switch according to 1 or 12. 14. The first MOSFET and the second bipolar transistor are formed in a first semiconductor chip, respectively, and the second MOSFET and the first bipolar transistor are respectively formed in a first semiconductor chip. Formed in the second semiconductor chip, and the current path of the first MOSFET and the current path of the second MOSFET and the first input terminal and the second input terminal are mutually connected to the first and second semiconductors. 14. The semiconductor switch according to claim 13, wherein the wiring is provided outside the chip. 15. The semiconductor switch according to claim 14, wherein the first semiconductor chip, the second semiconductor chip, and the wiring are integrated into one chip. 16. The first semiconductor chip is the first semiconductor chip.
First conductivity type semiconductor substrate serving as the drain of the MOSFET and the emitter of the second bipolar transistor, and the second conductivity serving as the base of the second bipolar transistor formed in the substrate. -Type first semiconductor region, a second semiconductor region of the first conductivity type that serves as a collector of the second bipolar transistor formed in the first semiconductor region, and the first semiconductor region A third semiconductor region of the first conductivity type, which is a source of the first MOSFET formed inside, and an insulation on the second semiconductor region between the third semiconductor region and the substrate. The conductive layer serving as the gate of the first MOSFET formed through the film, and the second semiconductor chip serve as the drain of the second MOSFET and the emitter of the first bipolar transistor. First A semiconductor substrate of one conductivity type, a first semiconductor region of a second conductivity type serving as a base of the first bipolar transistor formed in the substrate, and a semiconductor substrate formed in the first semiconductor region. The second semiconductor region of the first conductivity type, which serves as a collector of the first bipolar transistor, and the second M formed in the first semiconductor region.
A third semiconductor region serving as a source of the OSFET, and the second MOSFE formed on the first semiconductor region between the third semiconductor region and the substrate via an insulating film.
16. The semiconductor switch according to claim 14, comprising a conductive layer serving as a gate of T. 17. An anode of a light receiving element which receives a light signal from a light emitting element and generates a photoelectromotive force is connected to each of the first input terminal and the second input terminal. 13. The semiconductor switch according to claim 11, wherein the cathode is connected to the common connection point. 18. An anode of a light receiving element for receiving an optical signal from the light emitting element and generating a photoelectromotive force is connected to each of the first input terminal and the second input terminal, and the light receiving element is connected to the anode. 17. The semiconductor switch according to claim 13, wherein the cathode is connected to the common connection point.