EP0000844B1 - Semiconductor circuit arrangement for controlling a controlled device. - Google Patents
Semiconductor circuit arrangement for controlling a controlled device. Download PDFInfo
- Publication number
- EP0000844B1 EP0000844B1 EP78300269A EP78300269A EP0000844B1 EP 0000844 B1 EP0000844 B1 EP 0000844B1 EP 78300269 A EP78300269 A EP 78300269A EP 78300269 A EP78300269 A EP 78300269A EP 0000844 B1 EP0000844 B1 EP 0000844B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- transistor
- current carrying
- terminal
- high current
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Definitions
- This invention relates to a semiconductor circuit arrangement for controlling current transmitted through a controlled device.
- the current in a controlled device such as a semiconductor light emitting diode (LED) has been regulated by a control circuit containing an insulated gate field effect transistor (IGFET) driver switch of relatively very large transconductance in series with a ballast resistor.
- IGFET insulated gate field effect transistor
- the IGFET driver is typically formed in a semiconductive silicon chip in accordance with standard MOS (metal-oxide-semiconductor) technology.
- MOS metal-oxide-semiconductor
- U.S. patent No. 3,903,454 there is disclosed a semiconductor circuit arrangement comprising first transistor switch means for controlling a controlled device when connected in series therewith in response to an input signal, and comparator feedback means operable on the control input of the first transistor switch means for controlling the current flowing through said transistor switch means in dependence upon a comparison of a voltage afforded by said transistor switch means and a reference potential, said comparator feedback means comprising first and second feedback terminals and second and third transistors each having a pair of high current carrying terminals and a low current carrying terminal, the first feedback terminal being connected to the control input of the first transistor switch means and the second feedback terminal being connected to a high current carrying terminal of said first transistor switch means, one of the high current carrying terminals of the second transistor being connected to one of the high current carrying terminals of the third transistor, the low current carrying terminal of the third transistor being connected to the second feedback terminal, and the other of the high current carrying terminals of the second transistor being connected to the first feedback terminal.
- the input signal to said arrangement is applied to the control input of said switch means, and the low current carrying terminal of the second transistor is connected to a terminal for the application thereto of a fixed reference potential (ground), the second feedback terminal being adapted to have the controlled device connected to it.
- the transistor switch means can operate with a relatively large source-drain voltage, typically of about 5 volts; therefore, for a given operating current in the thereby controlled (LED) device the transistor switch means can now have a relatively high resistance, thereby reducing the required amount of semiconductor chip area therefor.
- a semiconductor LED 10 has one of its terminals connected to a voltage source V GG and another of its terminals connected to a ballast resistor R.
- the circuit parameters will be described in terms of P-MOS technology.
- the source V GG is approximately -12 volts
- the resistor R is approximately a thousand ohms.
- the LED is characterized by an operating "on" current of about 10 milliamperes with an operating voltage drop of about 2 to 3 volts.
- the LED and the resistor R are connected in series with the high current (i.e. source-drain) path of an IGFET driver 0 1 to another voltage source V ss of about +5 volt. In its "on" state, the driver 0 1 has a resistance advantageously equal to about R/2 or less.
- the IGFETs Q 3 , Q 4 , Q 5 and Q 6 are in a comparator feedback network arrangement for stabilizing the voltage at node 11 located between R and Q,.
- the node 11 is connected to a low current (i.e. gate) terminal of 0 6 whose high current path connects V GG to a node 13.
- the gate terminal of the driver Q 1 is connected to a node 12 which is connected through Q 5 to V GG and through Q 4 to the node 13.
- the IGFET Q 5 is in a diode configuration; that is, the drain and gate terminals of Q 5 are shorted together, so that Q 5 behaves as a diode which tends to conduct current only in the direction toward the source V GG .
- the gate terminal of Q 4 is connected to ground serving as a reference potential.
- the node 12 is further connected to V ss through the high current path of Q 2 .
- the gate of Q 2 is connected to an input signal source 20 which provides signals for turning Q 2 "on” and “off".
- Q 2 when Q 2 is “on”, then Q, is “off” and hence the LED 10 is also “off”; and when Q 2 is “off”, then Q 1 is “on” and hence the LED 10 is also “on”.
- the feedback arrangement acts as a signal inverter as well as a current stabilizer.
- the transconductance ratios B 2 , B 3 , B 4 , B 5 and B 6 of the IGFETs Q 2 , Q 3 , Q 4 , Q 5 and Q 6 , respectively, should satisfy the following: B 5 should be much less than B 3 ; B 3 should be much less than either B 4 and B 6 ; and B 4 and B 6 should be much less than B 2 .
- B 5 should be much less than B 3 ; B 3 should be much less than either B 4 and B 6 ; and B 4 and B 6 should be much less than B 2 .
- uch less than is meant less than by preferably a factor of 10, but in any event at least by a factor of 2 or 5.
- the node 12 tends to remain at essentially the potential V ss by virtue of the connection of this node to the source V ss through the relatively high B IGFET Q 2 .
- This connection is through the transistor of the highest B in the comparator circuit (Q 3 , Q 5 and Q 6 in particular).
- the node 12 remains in a stable condition at essentially V ss (the substrate of all transistors is connected to V ss as is ordinarily true in P-MOS integrated circuits). Accordingly, the voltage on the node 12 maintains the IGFET Q 1 in its "off” state, thereby maintaining the LED 10 in its "off” state also.
- the transistor Q 6 since the node 11 is essentially at potential at V GG due to the path through R and the LED to the source V GG , the transistor Q 6 is in its "on” state; so that the node 13 is essentially at potential V GG (except for a threshold of Q 6 which, with the backgate bias effect, is about -5 or -6 volts). This is true even though Q 3 is also "on” because of the high B 6 of Q 6 as compared with the low B 3 of Q 3 .
- N-MOS technology can be used instead of P-MOS; that is, all the transistors Q 1 ⁇ Q 6 can be integrated in a P-type semiconductor chip with N+ type source and drain regions, with suitable modifications in V ss and V GG .
- other types of transistors than IGFETs can be used, such as J-FETs or bipolar transistors.
- a unidirectional current inhibiting diode element of conductance B 5 in the forward direction can be used instead of the transistor Q 5 .
- the voltages applied to gate electrode of Q 4 and of Q 3 can both be other than ground, in order to stabilize the voltage at node 11 during operation at a corresponding voltage other than essentially ground potential.
- the voltage difference (V SS ⁇ V GG ) be at least three or more times the voltage drop across the LED in its "on" state, and that the voltage at node 11 be stabilized to a value that is sufficiently different from V ss to enable the use of a relatively small sized driver 0 1 of relatively high resistance, thereby to conserve semiconductor chip area.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Led Devices (AREA)
- Control Of El Displays (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Description
- This invention relates to a semiconductor circuit arrangement for controlling current transmitted through a controlled device.
- In the prior art, the current in a controlled device such as a semiconductor light emitting diode (LED) has been regulated by a control circuit containing an insulated gate field effect transistor (IGFET) driver switch of relatively very large transconductance in series with a ballast resistor. The IGFET driver is typically formed in a semiconductive silicon chip in accordance with standard MOS (metal-oxide-semiconductor) technology. During operation, if the voltage drop across the IGFET driver in its "on" condition is relatively small compared with applied voltage, the brightness of the LED in its "on" condition is somewhat stabilized by the ballast resistor. However, such a control circuit suffers from poor current regulation, whereby the current in the LED during operation can fluctuate by as much as a factor of 3 when the voltage of the external power supply, of typically about 5 or 6 volts, fluctuates by only 20 percent. Although this fluctuation in current can be reduced by using larger voltages for the power supply in conjunction with a larger ballast resistor, such an approach to the current fluctuation problem still suffers from the requirement of a physically relatively large IGFET driver. This device, which consumes an undesirably large amount of semiconductive silicon chip area, is required in order to keep the driver resistance, and hence the driver voltage drop, relatively small (0.5 volt drop) for the desired LED operating current. Moreover, ordinary processing variations in the manufacture of the IGFET driver of the prior art circuit cause corresponding variations in the LED operating current, thereby adversely affecting either the brightness or the lifetime of the LED on account of, respectively, either too little or too much operating current. It would therefore be desirable to have a control circuit for stabilizing the operating current in an LED, which mitigates the shortcomings of this prior art.
- In U.S. patent No. 3,903,454 there is disclosed a semiconductor circuit arrangement comprising first transistor switch means for controlling a controlled device when connected in series therewith in response to an input signal, and comparator feedback means operable on the control input of the first transistor switch means for controlling the current flowing through said transistor switch means in dependence upon a comparison of a voltage afforded by said transistor switch means and a reference potential, said comparator feedback means comprising first and second feedback terminals and second and third transistors each having a pair of high current carrying terminals and a low current carrying terminal, the first feedback terminal being connected to the control input of the first transistor switch means and the second feedback terminal being connected to a high current carrying terminal of said first transistor switch means, one of the high current carrying terminals of the second transistor being connected to one of the high current carrying terminals of the third transistor, the low current carrying terminal of the third transistor being connected to the second feedback terminal, and the other of the high current carrying terminals of the second transistor being connected to the first feedback terminal.
- In accordance with the present invention the input signal to said arrangement is applied to the control input of said switch means, and the low current carrying terminal of the second transistor is connected to a terminal for the application thereto of a fixed reference potential (ground), the second feedback terminal being adapted to have the controlled device connected to it. In this way the transistor switch means can operate with a relatively large source-drain voltage, typically of about 5 volts; therefore, for a given operating current in the thereby controlled (LED) device the transistor switch means can now have a relatively high resistance, thereby reducing the required amount of semiconductor chip area therefor.
- This invention together with its features, objects, and advantages will be better understood from the following exemplary embodiment which is described in conjunction with the accompanying single figure drawing which is a schematic circuit diagram of a semiconductor circuit arrangement for regulating the current in a semiconductor LED in accordance with a specific embodiment of the invention.
- As shown in the drawing, a
semiconductor LED 10 has one of its terminals connected to a voltage source VGG and another of its terminals connected to a ballast resistor R. As one example, the circuit parameters will be described in terms of P-MOS technology. Typically, the source VGG is approximately -12 volts, and the resistor R is approximately a thousand ohms. The LED is characterized by an operating "on" current of about 10 milliamperes with an operating voltage drop of about 2 to 3 volts. The LED and the resistor R are connected in series with the high current (i.e. source-drain) path of an IGFET driver 01 to another voltage source Vss of about +5 volt. In its "on" state, the driver 01 has a resistance advantageously equal to about R/2 or less. - As further shown in the drawing, the IGFETs Q3, Q4, Q5 and Q6 are in a comparator feedback network arrangement for stabilizing the voltage at node 11 located between R and Q,. For this purpose, the node 11 is connected to a low current (i.e. gate) terminal of 06 whose high current path connects VGG to a node 13. The node 13 is connected to Vss through the high current path of Q3 whose gate terminal is grounded (V=0). The gate terminal of the driver Q1 is connected to a
node 12 which is connected through Q5 to VGG and through Q4 to the node 13. The IGFET Q5 is in a diode configuration; that is, the drain and gate terminals of Q5 are shorted together, so that Q5 behaves as a diode which tends to conduct current only in the direction toward the source VGG. On the other hand, the gate terminal of Q4 is connected to ground serving as a reference potential. - The
node 12 is further connected to Vss through the high current path of Q2. The gate of Q2 is connected to aninput signal source 20 which provides signals for turning Q2 "on" and "off". As more fully explained below, when Q2 is "on", then Q, is "off" and hence theLED 10 is also "off"; and when Q2 is "off", then Q1 is "on" and hence theLED 10 is also "on". Thus, the feedback arrangement acts as a signal inverter as well as a current stabilizer. - For optimum operation, the transconductance ratios B2, B3, B4, B5 and B6 of the IGFETs Q2, Q3, Q4, Q5 and Q6, respectively, should satisfy the following: B5 should be much less than B3; B3 should be much less than either B4 and B6; and B4 and B6 should be much less than B2. By "much less than" is meant less than by preferably a factor of 10, but in any event at least by a factor of 2 or 5. For example, by way of an illustrative example only, suitable approximate values for the B's are: B5=2× 10-6 mho/V; B3=15×10-6 mho/V; B4=B6=100×10-6 mho/V; and B2=250×10-6 mho/V. Moreover, the transistor Q1 is advantageously characterized by moderately high B1: for a 10 milliamp LED current, a suitable approximate value is B1=250×10-6 mho/volt. In the absence of the comparator feedback circuit, the required transconductance of the IGFET driver would be about 1,200×10-6 mho/volt. Operation of the circuit shown in the drawing can be understood from the following considerations. Starting from a condition in which the LED and the driver Q, are both "off" in the presence of a signal from the
source 20 sufficient to maintain Q2 in its "on" state, it will first be shown that this condition is stable; and it will then be shown that a signal applied that is sufficient to switch and maintain Q2 in its "off" state will also switch and maintain both the driver Q, and the LED "on" in a stabilized current condition. In order to explain this operation, it is to be noted that when at first the input signal maintains Q2 in its "on" state, then the driver Q, will thus be in its "off" state and hence the LED will also be in its "off" state. Under these conditions, thenode 12 tends to remain at essentially the potential Vss by virtue of the connection of this node to the source Vss through the relatively high B IGFET Q2. This connection is through the transistor of the highest B in the comparator circuit (Q3, Q5 and Q6 in particular). Thus, thenode 12 remains in a stable condition at essentially Vss (the substrate of all transistors is connected to Vss as is ordinarily true in P-MOS integrated circuits). Accordingly, the voltage on thenode 12 maintains the IGFET Q1 in its "off" state, thereby maintaining theLED 10 in its "off" state also. Meanwhile, since the node 11 is essentially at potential at VGG due to the path through R and the LED to the source VGG, the transistor Q6 is in its "on" state; so that the node 13 is essentially at potential VGG (except for a threshold of Q6 which, with the backgate bias effect, is about -5 or -6 volts). This is true even though Q3 is also "on" because of the high B6 of Q6 as compared with the low B3 of Q3. On the other hand, since node 13 is at essentially VGG while thenode 12 is at Vss, Q4 is "on"; but this "on" condition of Q4 combined with the "on" conditions of Q5 and Q6 is not sufficient to pull thenode 12 away from Vss, since Q2 has the highest transconductance B of all. Thus, thenode 12 remains stably at Vss, thereby keeping Q, in its "off" state and hence the LED stably remains in its "off" state also. - When the input signal applied by the
source 20 to the gate of Q2 is then switched to a value sufficient to turn Q2 "off", the potential of thenode 12 tends toward VGG but without reaching it because the driver Q1 turns "on" before thisnode 12 reaches ground. As soon as the driver Q1 turns "on", however, the LED turns "on" also and the node 11, between Q, and R, goes from the potential VGG toward the potential Vss, since the "on" resistance of the driver is advantageously made sufficiently small compared with R, typically about R/2. As the node 11 goes toward Vss, the transistor Q6 allows the node 13 to go toward Vss by virtue of the "on" state of Q3. But when this node 13 reaches ground plus the threshold of 04, then Q4 turns "on", in the opposite direction with node 13 as its source andnode 12 as its drain, thereby preventing thenode 12 from going any further toward VGG. In this way, thenode 12 is kept at a potential suitable for maintaining the driver Q, and the LED in their "on" states. In effect, the transistor arrangement of 03, Q4, Ql and Q6 acts as a feedback comparator for stabilizing, against fluctuations of either polarity, the voltage at node 11 essentially at the voltage applied to the gate of Q4, whenever the signal input turns Q2 "off". Thus, the LED remains "on" until the input signal is thereafter switched to a value sufficient to turn the transistor Q2 back to its "on" state. - Although the invention has been described in detail in terms of a specific embodiment, various modifications can be made without departing from the scope thereof. For example, N-MOS technology can be used instead of P-MOS; that is, all the transistors Q1―Q6 can be integrated in a P-type semiconductor chip with N+ type source and drain regions, with suitable modifications in Vss and VGG. Moreover, other types of transistors than IGFETs can be used, such as J-FETs or bipolar transistors. Also, a unidirectional current inhibiting diode element of conductance B5 in the forward direction can be used instead of the transistor Q5. Moreover, the voltages applied to gate electrode of Q4 and of Q3 can both be other than ground, in order to stabilize the voltage at node 11 during operation at a corresponding voltage other than essentially ground potential. In any event, however, it is preferred that the voltage difference (VSS―VGG) be at least three or more times the voltage drop across the LED in its "on" state, and that the voltage at node 11 be stabilized to a value that is sufficiently different from Vss to enable the use of a relatively small sized driver 01 of relatively high resistance, thereby to conserve semiconductor chip area.
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/823,729 US4160934A (en) | 1977-08-11 | 1977-08-11 | Current control circuit for light emitting diode |
US823729 | 1992-01-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0000844A1 EP0000844A1 (en) | 1979-02-21 |
EP0000844B1 true EP0000844B1 (en) | 1983-03-23 |
Family
ID=25239562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP78300269A Expired EP0000844B1 (en) | 1977-08-11 | 1978-08-08 | Semiconductor circuit arrangement for controlling a controlled device. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4160934A (en) |
EP (1) | EP0000844B1 (en) |
JP (1) | JPS5430456A (en) |
DE (1) | DE2862207D1 (en) |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2014351A1 (en) * | 1970-03-25 | 1971-11-11 | Siemens Ag | Circuit arrangement for regulating a current |
US3736522A (en) * | 1971-06-07 | 1973-05-29 | North American Rockwell | High gain field effect transistor amplifier using field effect transistor circuit as current source load |
JPS5121781B2 (en) * | 1973-05-02 | 1976-07-05 | ||
US3925690A (en) * | 1974-09-30 | 1975-12-09 | Rockwell International Corp | Direct drive circuit for light emitting diodes |
US3955103A (en) * | 1975-02-12 | 1976-05-04 | National Semiconductor Corporation | Analog switch |
US4017847A (en) * | 1975-11-14 | 1977-04-12 | Bell Telephone Laboratories, Incorporated | Luminous indicator with zero standby power |
-
1977
- 1977-08-11 US US05/823,729 patent/US4160934A/en not_active Expired - Lifetime
-
1978
- 1978-08-08 EP EP78300269A patent/EP0000844B1/en not_active Expired
- 1978-08-08 DE DE7878300269T patent/DE2862207D1/en not_active Expired
- 1978-08-11 JP JP9745678A patent/JPS5430456A/en active Pending
Also Published As
Publication number | Publication date |
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JPS5430456A (en) | 1979-03-06 |
EP0000844A1 (en) | 1979-02-21 |
DE2862207D1 (en) | 1983-04-28 |
US4160934A (en) | 1979-07-10 |
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