JPH0689844A - Aligner - Google Patents

Abstract

PURPOSE:To acquire a reflective projection type exposure device with a function which enables arbitrary selection and setting of a projection magnification to an exposure object surface of a pattern mask by considering an error of a dimensional accuracy caused by contraction property (contraction coefficient) involved in burning. CONSTITUTION:This device is provided with an exposure source 9 for shedding light on a specified surface of a pattern mask 8 and a luminous flux magnification conversion lens group 10 for converting magnification of luminous flux which passes through the pattern mask 8. The device is further provided with a first optical path conversion mirror 12 which guides transmitted luminous flux converted to a specified luminous flux magnification by any of the lens group 10 to a concave mirror 11, a convex lens 13 which is arranged in opposition to the concave mirror 11 and reflects light reflected at the concave mirror 11 to the concave mirror 11 again and a second optical path conversion mirror 15 which guides the reflected light which is reflected by the convex mirror 13 and reflected again by the concave mirror 11 to a surface of an exposure object 14.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflection projection type exposure apparatus suitable for patterning a photosensitive resin layer or the like,
In particular, the present invention relates to a reflection projection type exposure apparatus suitable for a photosensitive resin layer or the like provided on a base (base material) surface made of materials having different degrees of shrinkage during firing, such as a co-firing ceramic substrate.

[0002]

2. Description of the Related Art In the case where, for example, a Si wafer or a ceramic substrate is used as a supporting substrate and a required conductive pattern or the like is formed on its main surface, it is generally performed as follows. That is, after a photosensitive resin (medicine) layer is formed on the surface of a supporting substrate, the photosensitive resin layer is selectively exposed and developed to perform forward or reverse patterning. afterwards,
A means for selectively forming a conductor layer on the area surface exposed by the patterning or selectively making it a non-conductor is adopted.

For selective exposure of the photosensitive resin layer, generally, a reflection projection type exposure apparatus having a schematic cross section of the main part is used in FIG.
That is, the shell type refraction element 1 for converging and projecting the light from the exposure light source, for example, ultraviolet rays in a slit shape, the pattern mask (for forming a conductive pattern) 2, which is irradiated with the converging projection light through the shell type refraction element 1, A first optical path changing mirror 4 that guides a transmitted light flux that has passed through the pattern mask 2 to a concave mirror surface 3, and a convex mirror 5 that is disposed so as to face the concave mirror 3 and that reflects the light reflected by the concave mirror 3 back to the concave mirror 3. ,
A second optical path changing mirror 7 is provided for guiding the reflected light from the convex mirror 5 and the re-reflected light from the concave mirror surface 3 to the exposed body 6. The shell-type refraction element 1 changes the pattern dimension error of the pattern mask 2 due to temperature fluctuation, in other words, the magnification of the pattern light flux changes within a range of about ± 1,000,000 depending on the installation (arrangement) position. However, it is effective only in the direction perpendicular to the scanning direction of the pattern mask 2 and the exposed body 6, and has so-called directivity. Further, in this exposure apparatus, the space between the pattern mask 2 and the surface of the exposed body 6 is linearly scanned integrally in the so-called spherical mirror optical axis direction, and the pattern mask 2 and the surface of the exposed body 6 are optically scanned. At 1
While positioned in a one-to-one relationship, the pattern of the pattern mask 2 is selectively irradiated onto the surface of the exposed body 6 to selectively expose and cure the photosensitive resin layer, and then the required patterning is performed in the development process. It can be done.

[0004]

In the above-mentioned reflection projection type exposure apparatus, since the projection magnification of the pattern mask 2 is set to 1: 1, there is a problem in dimensional accuracy. As a measure, the transmitted light flux (slit light flux) that has passed through the pattern mask 2 is optically changed to correct the magnification in the axis perpendicular to the scanning direction, while the scanning speed between the pattern mask 2 and the exposed surface 6 is further increased. Is slightly changed to correct the magnification in the scanning direction. Even with such countermeasures, the dimensional error that can be corrected on the Si wafer surface is limited to within ± 2 μm. In other words, it is possible to form a thin film pattern on the Si wafer surface with a certain degree of dimensional accuracy, but in the case of the so-called green sheet method for forming a thin film pattern, or when manufacturing a ceramic wiring board, it is still possible to sufficiently correct the dimensional accuracy error. I can't. That is, in the case of manufacturing a ceramic wiring board by selectively exposing / developing by the exposure device and forming a conductive pattern on the main surface of the green sheet, if necessary, stacking and co-firing Due to the shrinkage (shrinkage rate) associated with firing, the dimensional accuracy error is as large as 0.5%. For example, when manufacturing a 100 x 100 mm wiring board, a dimensional error of up to 500 μm may occur due to firing. Become. And the correction of this dimensional error of about 0.5% is
It is not practical to change the scanning speed of the above-mentioned correction means, especially the pattern mask 2 and the surface 6 to be exposed, because speed control is difficult. Further, when the dimension correction by the exposure apparatus is difficult or difficult, it is necessary to prepare a plurality of (two) masks 2 having the same pattern with slightly different magnifications, and to use these masks properly. There is the inconvenience of becoming complicated.

The present invention has been made in consideration of the above circumstances. In consideration of an error in dimensional accuracy caused by shrinkage (shrinkage rate) associated with firing, the projection magnification of the pattern mask with respect to the surface of the exposed object is arbitrarily set. An object is to provide a reflection projection type exposure apparatus with a function that can be selected and set.

[0006]

An exposure apparatus according to the present invention comprises an exposure source for irradiating a predetermined pattern mask surface, a light flux magnification conversion lens group for converting the magnification of a light flux transmitted through the pattern mask, and A first optical path conversion mirror that guides a transmitted light flux, which has been converted to a predetermined luminous flux magnification by one of the luminous flux magnification conversion lenses in the luminous flux magnification conversion lens, to a concave mirror surface, and is arranged to face the concave mirror. And a second optical path conversion mirror for guiding the light reflected by the concave mirror to the concave mirror again, and for guiding the light reflected by the convex mirror and further reflected by the concave mirror to the surface of the exposed body. It is characterized by being formed.

[0007]

According to the reflection projection type exposure apparatus of the present invention,
A light flux magnification conversion lens group is arranged on the light flux path (optical path) that has passed through the pattern mask, and a light flux magnification conversion lens selected from this light flux magnification conversion lens group projects on the first light path conversion mirror. The magnification can be arbitrarily selected and set. That is, when a ceramic wiring board or the like is manufactured by co-firing, the dimensional changes (occurrence of dimensional accuracy error) of the support base and the conductive pattern due to the shrinkage (shrinkage rate) of the ceramic due to the firing are taken into consideration in advance. The projection magnification of the pattern mask on the surface of the exposed object can be arbitrarily selected and set, and a fine conductive (circuit) pattern with high dimensional accuracy can be formed reliably and easily.

[0008]

EXAMPLE An example of the present invention will be described with reference to FIG.

FIG. 1 is a cross-sectional view showing an example of the essential structure of an exposure apparatus according to the present invention. An exposure source 9 for irradiating a surface of a predetermined pattern mask 8 and a light beam transmitted through the pattern mask 8 are shown. A light flux magnification conversion lens group 10 for converting the magnification,
A first optical path conversion mirror 12 that guides a transmitted light flux, which has been converted to a predetermined light flux magnification by any one of the light flux magnification conversion lenses 10a, 10b, ... Of the light flux magnification conversion lens group 10, to a concave mirror 11 surface. And a concave mirror which is arranged so as to face the concave mirror 11.
The convex mirror 13 that reflects the light reflected by 11 back to the concave mirror 11
And a second optical path changing mirror 15 that guides the re-reflected light from the concave mirror 11 to the surface of the exposed body 14 and further.

As can be seen from the schematic configuration above,
The reflection projection type exposure apparatus according to the present invention is such that (a) a light flux magnification conversion lens group 10 for converting the magnification of the light flux transmitted through the pattern mask 8 is additionally provided, and (b) an object which has been confirmed in advance. Selecting one of the luminous flux magnification conversion lenses 10a, 10b, ... In the luminous flux magnification conversion lens group 10 in correspondence with the dimensional change rate (firing shrinkage rate, etc.) due to firing of the exposed body 14. c) One of the luminous flux magnification conversion lenses 10a, 10b,
It is characterized in that the transmitted luminous flux converted into a predetermined luminous flux magnification is sent to the first optical path converting mirror 12. FIG. 2 shows such a lens group 10 for light flux magnification conversion.
Of the pattern mask 8 according to the dimensional change rate (degree of occurrence of error) due to the firing, for example, 1: 1, 1: 1.01, 1: 0.99. Luminous flux magnification conversion lens 10 that can be changed by approximately 1%
A, 10b, ... Have a structure in which they are incorporated in a housing 10 '. Then, in the required exposure process, in consideration of the rate of dimensional change due to the baking of the exposed body 14 or the like, any one of the luminous flux magnification conversion lenses 10a, 10b, ... Is selected,
Substantially, the pattern mask 8 can be patterned in a form in which the magnification of the pattern mask 8 is matched (matched) with the dimensional change rate due to firing of the exposed body 14.

Next, the operation or use example of the reflection projection type exposure apparatus having the above configuration will be described.

The ultraviolet light emitted from the exposure source 9, for example, an ultraviolet light source, is made into a slit-shaped light beam and is incident on the surface of a predetermined pattern mask 8. Then, the light flux transmitted through the pattern mask 8 is converted by any one of the light flux magnification conversion lenses 10a, 10b, ...
Considering the rate of dimensional change of the exposed body 14, the magnification with respect to the pattern mask 8 is a required magnification, for example, 1: 1 or 1: 1.
Convert as 1.01, 1 to 0.99. In this way, the required pattern light flux that has passed through the pattern mask 8 is selected and set to a desired magnification and projected onto the surface of the first optical path conversion mirror 12. That is, the pattern light flux transmitted through the pattern mask 8 is expanded or reduced according to the final dimensional change rate of the exposed body 14, and is guided to the concave mirror 11 via the first optical path changing mirror 12. . The pattern light beam guided to the surface of the concave mirror 11 is incident on the surface of the convex mirror 13 arranged to face the concave mirror 11, is reflected by the surface of the convex mirror 13 and is reflected (incident) on the surface of the concave mirror 11 again, and further the concave mirror 11 is formed. Is reflected again and guided to the surface of the exposed body 14 through the second optical path changing mirror 15 (projects the surface of the exposed body 14).

[0013]

As is clear from the above description, according to the exposure apparatus of the reflection projection type according to the present invention, the error of the pattern accuracy due to the shrinkage at the time of firing is ± 0.5 as in the case of a co-fired multilayer ceramic wiring board. %, Which is suitable for photoresist masking when forming a fine thin film pattern on the substrate surface or the green sheet surface. That is, in the method for manufacturing a multilayer ceramic wiring board by simultaneous firing of a green sheet or the like, which has a large pattern accuracy error of about ± 0.5% due to shrinkage during firing, a photosensitive resin (photosensitive agent) is applied to the surface of the green sheet. In the step of applying, selectively exposing / developing, and performing the required masking, patterning can be performed in consideration (calculation) in advance of an error in pattern accuracy due to shrinkage during firing. Therefore, the exposure apparatus according to the present invention is suitable for manufacturing a wiring board or the like having a dimensional accuracy of the wiring board itself or a conductive pattern (circuit pattern) which is fine and highly accurate and which is highly functional and reliable. It can be said that it does.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration example of a main part of a reflection projection type exposure apparatus according to the present invention.

FIG. 2 is a plan view showing a configuration example of a luminous flux magnification conversion lens group included in a reflection projection type exposure apparatus according to the present invention.

FIG. 3 is a cross-sectional view showing a main configuration of a conventional reflection projection type exposure apparatus.

[Explanation of symbols]

1 ... Shell type refraction element 2, 8 ... Pattern mask
3,11 ... Concave mirror 4,12 ... First optical path changing mirror
5, 13 ... Convex mirror 6, 14 ... Exposed body 7, 15 ... Second optical path conversion mirror 9 ... Light source 10 ... Luminous flux magnification conversion lens group 10a, 10b, ... Luminous flux magnification conversion lens 10 '... Housing

Claims (1)

[Claims] 1. A light source for irradiating a predetermined pattern mask surface, a light flux magnification conversion lens group for converting the magnification of a pattern light flux transmitted through the pattern mask, and any one of the light flux magnification conversion lens group. A first optical path conversion mirror that guides a transmission pattern light flux converted to a predetermined light flux magnification by a light flux magnification conversion lens to a concave mirror surface, and a light that is arranged to face the concave mirror and that is reflected by the concave mirror. An exposure apparatus comprising: a convex mirror that reflects again to the concave mirror; and a second optical path changing mirror that guides re-reflected light reflected by the convex mirror to the surface of the object to be exposed.