CN113759672A - Exposure system and exposure method - Google Patents
Exposure system and exposure method Download PDFInfo
- Publication number
- CN113759672A CN113759672A CN202111041952.4A CN202111041952A CN113759672A CN 113759672 A CN113759672 A CN 113759672A CN 202111041952 A CN202111041952 A CN 202111041952A CN 113759672 A CN113759672 A CN 113759672A
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- Prior art keywords
- exposure
- light
- mirror
- substrate
- semi
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 51
- 238000002834 transmittance Methods 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The utility model provides an exposure system, includes light source subassembly, semi-transparent mirror, holophote, arc mirror group, mask plate and battery of lens, and the light that the light source subassembly sent carries out exposure for the first time after semi-transparent mirror, arc mirror group, mask plate, battery of lens in proper order, and the holophote sets up with semi-transparent mirror relatively, and semi-transparent mirror can be with light reflection to holophote, and the exposure for the second time is realized to the light of holophote reflection. The exposure system can improve the uniformity of the critical dimension of the line width of the image and improve the yield of products. The invention also relates to an exposure method.
Description
Technical Field
The invention relates to the technical field of circuit manufacturing, in particular to an exposure system and an exposure method.
Background
The display panel includes a display Area (Active Area) and a wiring Area (Fan-out) located at an edge of the display Area. The wiring in the wiring region is formed by exposing the wiring with an exposure machine and then developing the wiring. However, local anomalies in the line width CD of the manufactured image occur, the line width is too large or too small, CD uniformity and SPC CPK (quality system control index) are affected, and product yield is affected.
Disclosure of Invention
In view of this, the present invention provides an exposure system, which can improve the uniformity of critical dimension of line width of an image and improve the yield of products.
The utility model provides an exposure system, includes light source subassembly, semi-transparent mirror, holophote, arc mirror group, mask plate and battery of lens, and the light that the light source subassembly sent carries out exposure for the first time after semi-transparent mirror, arc mirror group, mask plate, battery of lens in proper order, and the holophote sets up with semi-transparent mirror relatively, and semi-transparent mirror can be with light reflection to holophote, and the exposure for the second time is realized to the light of holophote reflection.
In the embodiment of the invention, the total reflector and the mask plate are arranged in a staggered manner, and the light reflected by the total reflector does not pass through the mask plate and the lens group.
In an embodiment of the present invention, the exposure system further includes a perspective screen, the perspective screen is disposed opposite to the total reflector, the light reflected by the total reflector passes through the perspective screen to realize the second exposure, and the perspective screen is used for controlling transmittance of the light.
In an embodiment of the invention, the see-through screen includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, wherein a circuit layer for driving liquid crystal molecules to deflect is disposed on the first substrate and/or the second substrate.
In an embodiment of the present invention, the lens group includes a trapezoid mirror, a concave mirror and a convex mirror, the trapezoid mirror and the light emitting surface of the mask plate are arranged opposite to each other, the convex mirror is arranged between the trapezoid mirror and the concave mirror, and light is reflected by the trapezoid mirror, the concave mirror, the convex mirror, the concave mirror and the trapezoid mirror in sequence and then is subjected to the first exposure.
In an embodiment of the present invention, the exposure system further includes a first light shielding device and a second light shielding device, the first light shielding device is disposed on the light path of the first exposure, the first light shielding device is configured to conduct or block the exposure light path, the second light shielding device is disposed on the light path of the second exposure, and the second light shielding device is configured to conduct or block the exposure light path.
In an embodiment of the present invention, the transmittance of the semi-transparent mirror is greater than or equal to 80%, and the reflectance of the semi-transparent mirror is less than or equal to 20%.
The present invention also relates to an exposure method using the above exposure system, the method comprising:
controlling the light source assembly to emit light rays, and carrying out first exposure on the substrate to be exposed after the light rays sequentially pass through the semi-transparent lens, the arc lens group, the mask plate and the lens group;
and reflecting the light to the total reflector by using the semi-transparent mirror, and performing secondary exposure on the substrate by using the light reflected by the total reflector.
In an embodiment of the present invention, the method further includes:
and arranging a perspective screen on the light path of the second exposure, and controlling the transmittance of the perspective screen by using the perspective screen to shield light.
In an embodiment of the present invention, the method further includes:
arranging a first shading device on a light path of the first exposure, and arranging a second shading device on a light path of the second exposure, wherein the first shading device is used for conducting or blocking the exposure light path, and the second shading device is used for conducting or blocking the exposure light path;
when the substrate is exposed for the first time, controlling the first shading device to conduct a light path and controlling the second shading device to block the light path;
and when the substrate is exposed for the second time, controlling the first shading device to block the light path and controlling the second shading device to conduct the light path.
The exposure system can expose the substrate with different light quantities twice, expose the substrate with normal light quantity for the first time, expose the substrate for the second time after exposure is completed, shape the image on the substrate, and is beneficial to improving the uniformity of Critical Dimension (CD) of the line width of the image and the control index (SPC CPK) of a quality system, thereby improving the yield of products.
Drawings
Fig. 1 is a schematic configuration diagram of an exposure system of the present invention.
FIG. 2 is a schematic diagram of the exposure system of the present invention during a first exposure of a substrate.
FIG. 3 is a schematic diagram of the exposure system of the present invention during a second exposure of a substrate.
Fig. 4 is a schematic view of the substrate after exposure.
Detailed Description
The invention provides an exposure system.
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to facilitate understanding of those skilled in the art, the present invention provides a specific implementation process of the technical solution provided by the present invention through the following embodiments.
Fig. 1 is a schematic structural diagram of an exposure system of the present invention, fig. 2 is a schematic diagram of the exposure system of the present invention when exposing a substrate for the first time, fig. 3 is a schematic diagram of the exposure system of the present invention when exposing a substrate for the second time, fig. 4 is a schematic diagram of the exposed substrate after developing, as shown in fig. 1 to fig. 4, the exposure system includes a light source assembly 11, a semi-transparent mirror 12, a total reflector 13, an arc mirror group 14, a mask plate 15 and a lens group 16, light emitted by the light source assembly 11 passes through the semi-transparent mirror 12, the arc mirror group 14, the mask plate 15 and the lens group 16 in sequence to perform the first exposure, the total reflector 13 and the semi-transparent mirror 12 are arranged opposite to each other, the semi-transparent mirror 12 can reflect the light to the total reflector 13, and the light reflected by the total reflector 13 realizes the second exposure.
The exposure system can expose the substrate with different light quantities twice, expose the substrate with normal light quantity for the first time, expose the substrate for the second time after exposure is completed, shape the image on the substrate, and is beneficial to improving the uniformity of Critical Dimension (CD) of the line width of the image and the control index (SPC CPK) of a quality system, thereby improving the yield of products.
Further, the total reflection mirror 13 and the mask 15 are arranged in a staggered manner, and light reflected by the total reflection mirror 13 does not pass through the mask 15 and the lens group 16.
Further, the exposure system further comprises a perspective screen 17, the perspective screen 17 is arranged opposite to the total reflection mirror 13, the light reflected by the total reflection mirror 13 passes through the perspective screen 17 to realize the second exposure, and the perspective screen 17 is used for controlling the transmittance of the light. In this embodiment, the perspective screen 17 controls the exposure energy by controlling the transmittance of light, so as to ensure that the second exposure energy is 0% -10% of the first exposure energy, thereby realizing the image shaping function, for example, fine-tuning the Critical Dimension (CD) of the image line width to within 1 um.
Further, the see-through screen 17 includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, wherein a circuit layer for driving liquid crystal molecules to deflect is disposed on the first substrate and/or the second substrate. In this embodiment, the first substrate and the second substrate are transparent substrates, such as glass plates or transparent plastic plates, and can be freely selected according to actual needs.
Further, the lens assembly 16 includes a trapezoid mirror 161, a concave mirror 162 and a convex mirror 163, the trapezoid mirror 161 is disposed opposite to the light exit surface of the mask 15, the convex mirror 163 is disposed between the trapezoid mirror 161 and the concave mirror 162, and the light is reflected by the trapezoid mirror 161, the concave mirror 162, the convex mirror 163, the concave mirror 162 and the trapezoid mirror 161 in sequence and then is exposed for the first time.
Further, the exposure system further includes a first light shielding device (not shown) disposed on the light path of the first exposure, the first light shielding device being configured to conduct or block the exposure light path, and a second light shielding device (not shown) disposed on the light path of the second exposure, the second light shielding device being configured to conduct or block the exposure light path. In this embodiment, when performing the first exposure, the first light shielding device is controlled to conduct the light path, and the second light shielding device is controlled to block the light path; and when the second exposure is carried out, the first shading device is controlled to block the light path, and the second shading device is controlled to conduct the light path.
Further, the transmittance of the half mirror 12 is 80% or more, and the reflectance of the half mirror 12 is 20% or less, preferably, the transmittance of the half mirror 12 is 85, 15%, the transmittance of the half mirror 12 is 90, 10%, the transmittance of the half mirror 12 is 95, and the reflectance is 5%.
Further, the light source assembly 11 includes a light source 111 and a reflector 112, the light source 111 is used for emitting light, and the reflector 112 is used for reflecting the light to the half-lens 12.
Referring to fig. 1 to 4, the present invention further relates to an exposure method using the exposure system, the exposure method comprising:
controlling a light source assembly 11 to emit light rays, and carrying out first exposure on a substrate to be exposed after the light rays sequentially pass through a semi-transparent mirror 12, an arc lens group 14, a mask plate 15 and a lens group 16;
the light is reflected by the half mirror 12 to the total reflection mirror 13, and the substrate is exposed for the second time by the light reflected by the total reflection mirror 13.
The exposure method can carry out exposure with different light quantities for the substrate twice, carry out exposure with normal light quantity for the substrate for the first time, carry out exposure for the second time for the substrate after the exposure is finished, carry out shaping on the image on the substrate, be favorable for improving the uniformity of the Critical Dimension (CD) of the line width of the image and the control index (SPC CPK) of a quality system, and improve the yield of products.
Further, the exposure method further includes:
the perspective screen 17 is arranged on the light path of the second exposure, and the perspective screen 17 is used for shielding light to control the transmittance of the perspective screen 17. In this embodiment, the perspective screen 17 controls the exposure energy by controlling the transmittance of light, so as to ensure that the second exposure energy is 0% -10% of the first exposure energy, thereby realizing the image shaping function, for example, fine-tuning the Critical Dimension (CD) of the image line width to within 1 um. ,
further, the exposure method further includes:
arranging a first shading device on a light path of the first exposure, and arranging a second shading device on a light path of the second exposure, wherein the first shading device is used for conducting or blocking the exposure light path, and the second shading device is used for conducting or blocking the exposure light path;
when the substrate is exposed for the first time, controlling the first shading device to conduct the light path and controlling the second shading device to block the light path;
when the substrate is exposed for the second time, the first shading device is controlled to block the light path, and the second shading device is controlled to conduct the light path.
Further, the transmittance of the half mirror 12 is 80% or more, and the reflectance of the half mirror 12 is 20% or less, preferably, the transmittance of the half mirror 12 is 85, 15%, the transmittance of the half mirror 12 is 90, 10%, the transmittance of the half mirror 12 is 95, and the reflectance is 5%.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention. The various features described in the foregoing detailed description may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.
Claims (10)
1. The exposure system is characterized by comprising a light source assembly, a semi-transparent mirror, a total reflector, an arc-shaped mirror group, a mask plate and a lens group, wherein light emitted by the light source assembly sequentially passes through the semi-transparent mirror, the arc-shaped mirror group, the mask plate and the lens group to be exposed for the first time, the total reflector and the semi-transparent mirror are arranged oppositely, the semi-transparent mirror can reflect the light to the total reflector, and the light reflected by the total reflector realizes the exposure for the second time.
2. The exposure system according to claim 1, wherein the total reflection mirror is disposed to be offset from the mask plate, and light reflected by the total reflection mirror does not pass through the mask plate and the lens group.
3. The exposure system according to claim 1, further comprising a see-through screen disposed opposite to the holophote, wherein the light reflected by the holophote passes through the see-through screen to realize the second exposure, and the see-through screen is used for controlling a transmittance of the light.
4. The exposure system according to claim 3, wherein the see-through screen comprises a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, and a circuit layer for driving liquid crystal molecules to deflect is disposed on the first substrate and/or the second substrate.
5. The exposure system according to claim 1, wherein the lens group includes a trapezoidal mirror, a concave mirror, and a convex mirror, the trapezoidal mirror is disposed opposite to the light exit surface of the mask plate, the convex mirror is disposed between the trapezoidal mirror and the concave mirror, and the first exposure is performed after light is reflected by the trapezoidal mirror, the concave mirror, the convex mirror, the concave mirror, and the trapezoidal mirror in sequence.
6. The exposure system according to claim 1, further comprising a first light shielding device provided in an optical path of the first exposure for conducting or blocking an exposure optical path, and a second light shielding device provided in an optical path of the second exposure for conducting or blocking an exposure optical path.
7. The exposure system according to any one of claims 1 to 6, wherein a transmittance of the half mirror is 80% or more and a reflectance of the half mirror is 20% or less.
8. An exposure method using the exposure system according to any one of claims 1 to 7, the method comprising:
controlling the light source assembly to emit light rays, and carrying out first exposure on the substrate to be exposed after the light rays sequentially pass through the semi-transparent lens, the arc lens group, the mask plate and the lens group;
and reflecting the light to the total reflector by using the semi-transparent mirror, and performing secondary exposure on the substrate by using the light reflected by the total reflector.
9. The exposure method according to claim 8, further comprising:
and arranging a perspective screen on the light path of the second exposure, and controlling the transmittance of the perspective screen by using the perspective screen to shield light.
10. The exposure method according to claim 8, further comprising:
arranging a first shading device on a light path of the first exposure, and arranging a second shading device on a light path of the second exposure, wherein the first shading device is used for conducting or blocking the exposure light path, and the second shading device is used for conducting or blocking the exposure light path;
when the substrate is exposed for the first time, controlling the first shading device to conduct a light path and controlling the second shading device to block the light path;
and when the substrate is exposed for the second time, controlling the first shading device to block the light path and controlling the second shading device to conduct the light path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111041952.4A CN113759672B (en) | 2021-09-07 | 2021-09-07 | Exposure system and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111041952.4A CN113759672B (en) | 2021-09-07 | 2021-09-07 | Exposure system and exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113759672A true CN113759672A (en) | 2021-12-07 |
| CN113759672B CN113759672B (en) | 2024-06-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111041952.4A Active CN113759672B (en) | 2021-09-07 | 2021-09-07 | Exposure system and exposure method |
Country Status (1)
| Country | Link |
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| CN (1) | CN113759672B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689844A (en) * | 1992-09-09 | 1994-03-29 | Toshiba Corp | Aligner |
| JPH088169A (en) * | 1994-06-23 | 1996-01-12 | Nikon Corp | Exposure system |
| JPH0845815A (en) * | 1994-07-28 | 1996-02-16 | Toshiba Corp | Circular arc formation lighting system and exposure device using it |
| JPH08192287A (en) * | 1995-01-17 | 1996-07-30 | Toshiba Corp | Light source device for exposure and laser aligner |
| KR20080001427A (en) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | Exposure apparatus |
| CN102243444A (en) * | 2010-05-14 | 2011-11-16 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| JP2014110385A (en) * | 2012-12-04 | 2014-06-12 | Canon Inc | Exposure apparatus, and device manufacturing method |
| CN104460227A (en) * | 2014-12-15 | 2015-03-25 | 合肥京东方光电科技有限公司 | Film patterning method |
| JP2016143869A (en) * | 2015-02-05 | 2016-08-08 | キヤノン株式会社 | Exposure device, and method of manufacturing article |
-
2021
- 2021-09-07 CN CN202111041952.4A patent/CN113759672B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689844A (en) * | 1992-09-09 | 1994-03-29 | Toshiba Corp | Aligner |
| JPH088169A (en) * | 1994-06-23 | 1996-01-12 | Nikon Corp | Exposure system |
| JPH0845815A (en) * | 1994-07-28 | 1996-02-16 | Toshiba Corp | Circular arc formation lighting system and exposure device using it |
| JPH08192287A (en) * | 1995-01-17 | 1996-07-30 | Toshiba Corp | Light source device for exposure and laser aligner |
| KR20080001427A (en) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | Exposure apparatus |
| CN102243444A (en) * | 2010-05-14 | 2011-11-16 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| JP2014110385A (en) * | 2012-12-04 | 2014-06-12 | Canon Inc | Exposure apparatus, and device manufacturing method |
| CN104460227A (en) * | 2014-12-15 | 2015-03-25 | 合肥京东方光电科技有限公司 | Film patterning method |
| JP2016143869A (en) * | 2015-02-05 | 2016-08-08 | キヤノン株式会社 | Exposure device, and method of manufacturing article |
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| Publication number | Publication date |
|---|---|
| CN113759672B (en) | 2024-06-11 |
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