JPH0685508B2 - Optical receiver circuit - Google Patents
Optical receiver circuitInfo
- Publication number
- JPH0685508B2 JPH0685508B2 JP60223314A JP22331485A JPH0685508B2 JP H0685508 B2 JPH0685508 B2 JP H0685508B2 JP 60223314 A JP60223314 A JP 60223314A JP 22331485 A JP22331485 A JP 22331485A JP H0685508 B2 JPH0685508 B2 JP H0685508B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- resistor
- light receiving
- receiving element
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Communication System (AREA)
- Light Receiving Elements (AREA)
- Networks Using Active Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は受信した光信号を電気信号に変換する光受信回
路に関する。特に、周波数特性の補正を考慮した光受信
回路に関する。TECHNICAL FIELD The present invention relates to an optical receiving circuit for converting a received optical signal into an electric signal. In particular, the present invention relates to an optical receiver circuit in which correction of frequency characteristics is taken into consideration.
本発明は、能動半導体素子を含むインピーダンス変換回
路を有する光受信回路において、 能動半導体素子の接地電極と共通電位間のインピーダン
スを受光素子に到来する光信号の繰返し周波数に対して
きわめて低い値を呈するように設定することにより、 このインピーダンス変換回路に微分特性をもたせ、かつ
利得が低下しないようにしたものである。According to the present invention, in an optical receiving circuit having an impedance conversion circuit including an active semiconductor element, the impedance between the ground electrode of the active semiconductor element and the common potential exhibits an extremely low value with respect to the repetition frequency of the optical signal reaching the light receiving element. By making such settings, the impedance conversion circuit is provided with a differential characteristic and the gain is not lowered.
〔従来の技術〕 従来例光受信回路は、第2図に示すように、光信号を電
気信号に変換する受光素子D1と、ゲートがこの受光素子
D1のアノードに接続され、ドレインが第一抵抗器R1を介
して電源に接続され、ソースが第二の抵抗器R2を介して
共通電位に接続されるとともに第一蓄電器C1を介して共
通電位に接続される電界効果トランジスタFETと、エミ
ッタが電界効果トランジスタFETのドレインに接続さ
れ、ベースが基準電圧に接続され、コレクタが第三抵抗
器R3を介して共通電位に接続されたPNP形の第一トラン
ジスタTR1と、ペースが第一PNP形トランジスタTR1のコ
レクタに接続され、コレクタが電源に接続され、エミッ
タが第五抵抗器R5と第六抵抗器R6を介して共通電位に接
続されたNPN形の第二トランジスタTR2と、第五抵抗器R5
に並列に接続された第二蓄電器C2と、第五抵抗器R5と第
六抵抗器R6の接点と電界効果トランジスタFETのゲート
との間に接続された第七抵抗器R7とで構成されたトラン
スインピーダンス形増幅回路が使用されている。この回
路では、周波数特性が十分広くとれない場合に第四蓄電
器C4と第八抵抗器R8と第九抵抗器R9とで構成される微分
回路を接続することで帯域を広げていた。[Prior Art] As shown in FIG. 2, a conventional optical receiver circuit includes a light receiving element D1 for converting an optical signal into an electric signal and a gate for the light receiving element D1.
It is connected to the anode of D1, the drain is connected to the power supply via the first resistor R1, the source is connected to the common potential via the second resistor R2 and to the common potential via the first capacitor C1. Field-effect transistor FET to be connected, the emitter is connected to the drain of the field-effect transistor FET, the base is connected to the reference voltage, the collector is connected to the common potential via the third resistor R3 first PNP type A transistor TR1 and an NPN type whose pace is connected to the collector of the first PNP type transistor TR1, the collector is connected to the power supply, and the emitter is connected to a common potential via the fifth resistor R5 and the sixth resistor R6. Second transistor TR2 and fifth resistor R5
A transformer composed of a second capacitor C2 connected in parallel with the seventh resistor R7 connected between the contacts of the fifth resistor R5 and the sixth resistor R6 and the gate of the field effect transistor FET. Impedance type amplifier circuit is used. In this circuit, when the frequency characteristic is not sufficiently wide, the band is widened by connecting the differentiating circuit composed of the fourth capacitor C4, the eighth resistor R8, and the ninth resistor R9.
このような従来の回路では、増幅回路の後段に微分回路
を接続するので、微分回路でかなりの利得を低下する結
果となり、最小受光レベルを高くするには微分回路の後
段に増幅回路を接続する必要があり、したがって回路規
模が大きくなる欠点があった。In such a conventional circuit, since the differentiating circuit is connected to the latter stage of the amplifying circuit, the gain of the differentiating circuit is considerably reduced, and the amplifying circuit is connected to the latter stage of the differentiating circuit in order to increase the minimum light receiving level. However, there is a drawback that the circuit scale becomes large.
本発明は前述の欠点を解決するもので、利得の低下を招
くことなく従来例の微分回路と同等の帯域を得ることが
できる光受信回路を提供することを目的とする。The present invention solves the above-mentioned drawbacks, and an object of the present invention is to provide an optical receiving circuit that can obtain a band equivalent to that of a conventional differentiating circuit without lowering the gain.
本発明は、到来する光信号を電気信号に変換する受光素
子と、この受光素子の出力が入力に接続された比較増幅
回路と、この比較増幅回路の出力が入力に接続された能
動半導体素子を含むインピーダンス変換回路とを備えた
光受信回路において、上記能動素子の接地電極と共通電
位との間に、抵抗器およびコンデンサの並列回路が接続
され、この並列回路は、上記受光素子に到来する光信号
の繰返し周波数ではきわめて低いインピーダンスを呈す
る定数に設定されたことを特徴とする。The present invention provides a light receiving element that converts an incoming optical signal into an electric signal, a comparison amplification circuit to which an output of the light reception element is connected to an input, and an active semiconductor element to which an output of the comparison amplification circuit is connected to an input. In a light receiving circuit including an impedance conversion circuit including, a parallel circuit of a resistor and a capacitor is connected between the ground electrode of the active element and a common potential, and the parallel circuit is used for the light arriving at the light receiving element. It is characterized by being set to a constant exhibiting an extremely low impedance at the signal repetition frequency.
ここで、能動半導体素子はMOS形トランジスタ、バイポ
ーラ形トランジスタおよびFET形トランジスタのいずれ
のトランジスタであってもよい。Here, the active semiconductor element may be any of a MOS type transistor, a bipolar type transistor and a FET type transistor.
到来する光信号は受光素子で電気信号に変換され、これ
が比較増幅回路で増幅される。この出力がインピーダン
ス変換回路の能動半導体素子に入力する。この能動半導
体素子の接地電極と共通電位との間に挿入された抵抗器
と蓄電器の並列回路のインピーダンスは、受光素子に到
来する光信号の繰返し周波数に対してはきわめて低い値
を呈する。これはあたかも従来例回路で微分回路による
ハイパスフイルタ効果と同等の効果であり、帯域幅の拡
大を図ることができる。The incoming optical signal is converted into an electric signal by the light receiving element, and this is amplified by the comparison and amplification circuit. This output is input to the active semiconductor element of the impedance conversion circuit. The impedance of the parallel circuit of the resistor and the capacitor inserted between the ground electrode of the active semiconductor element and the common potential has an extremely low value with respect to the repetition frequency of the optical signal reaching the light receiving element. This is an effect equivalent to the high pass filter effect by the differentiating circuit in the conventional circuit, and the bandwidth can be expanded.
以下、本発明の実施例回路を図面に基づいて説明する。 An embodiment circuit of the present invention will be described below with reference to the drawings.
第1図は、本発明実施例回路の構成を示す回路接続図で
ある。FIG. 1 is a circuit connection diagram showing a configuration of an embodiment circuit of the present invention.
この実施例回路は光信号を電気信号に変換するアバラン
シェフォトダイオードおよびPIN接合形フォトダイオー
ドなどの受光素子D1と、ゲートが受光素子D1のアノード
に接続され、ドレインが第一抵抗器R1を介して電源に接
続され、ソースが第二抵抗器R2を介して共通電位に接続
されるとともに第一蓄電器C1を介して共通電位に接続さ
れる電界効果トランジスタFETと、エミッタが電界効果
トランジスタFETのドレインに接続され、ベースが基準
電圧端子VRefに接続され、コレクタが第三抵抗器R3を介
して共通電位に接続されたPNP形の第一トランジスタTR1
と、ベースが第一トランジスタTR1のコレクタに接続さ
れ、コレクタが電源に接続され、エミッタが第五抵抗器
R5と第六抵抗器R6とを介して共通電位に接続されたNPN
形の第二トランジスタTR2と、第五抵抗器R5に並列に接
続された第二蓄電器C2と、第五抵抗器R5と第六抵抗器R6
の接点と電界効果トランジスタFETのゲートとの間に接
続された第七抵抗器R7と、第六抵抗器R6に並列に接続さ
れた第三蓄電器C3と、第二トランジスタのコレクタと電
源の間に挿入された第四抵抗器R4とを備え、第二トラン
ジスタTR2のコレクタが出力端子OUTに接続される。な
お、図中破線で囲まれた部分は比較増幅回路を示す。The circuit of this embodiment includes a light receiving element D1 such as an avalanche photodiode and a PIN junction type photodiode for converting an optical signal into an electric signal, a gate connected to an anode of the light receiving element D1, and a drain via a first resistor R1. A field effect transistor FET connected to a power source, a source connected to a common potential via a second resistor R2 and a common potential connected via a first capacitor C1, and an emitter connected to a drain of the field effect transistor FET. Connected, the base is connected to the reference voltage terminal V Ref , and the collector is connected to the common potential via the third resistor R3, the first transistor TR1 of the PNP type
And the base is connected to the collector of the first transistor TR1, the collector is connected to the power supply, and the emitter is the fifth resistor.
NPN connected to common potential via R5 and sixth resistor R6
-Shaped second transistor TR2, a second capacitor C2 connected in parallel with the fifth resistor R5, a fifth resistor R5 and a sixth resistor R6.
Between the contact of and the gate of the field effect transistor FET, a seventh resistor R7, a third capacitor C3 connected in parallel with the sixth resistor R6, and between the collector of the second transistor and the power supply. With the inserted fourth resistor R4, the collector of the second transistor TR2 is connected to the output terminal OUT. The part surrounded by a broken line in the figure shows a comparison amplifier circuit.
この回路構成では、高周波成分は主として第三蓄電器C3
を通過するので、低周波数成分では利得が低く、高周波
成分では利得が高くなる。In this circuit configuration, the high frequency component is mainly the third capacitor C3.
, The gain is low for low frequency components and high for high frequency components.
本発明は以上説明したように、第四抵抗器R4と第三蓄電
器C3を追加することにより、従来例に用いられる第八抵
抗器R8、第九抵抗器R9および第四蓄電器C4で構成される
微分回路と同等の帯域で利得を低下させることなしに得
ることができるので、十分な利得を得るために微分回路
の後段にさらに増幅回路を追加する必要がなくなり、回
路規模を小さくする効果がある。As described above, the present invention is composed of the eighth resistor R8, the ninth resistor R9 and the fourth capacitor C4 used in the conventional example by adding the fourth resistor R4 and the third capacitor C3. Since it can be obtained without lowering the gain in the same band as that of the differentiating circuit, it is not necessary to add an amplifier circuit after the differentiating circuit in order to obtain sufficient gain, which has the effect of reducing the circuit scale. .
第1図は本発明実施例回路の構成を示す回路接続図。 第2図は従来例回路の構成を示す回路接続図。 D1……受光素子、FET……電界効果トランジスタ、TR1…
…PNP形トランジスタ、TR2……NPN形トランジスタ、R1
〜9……抵抗器、C1〜4……蓄電器、VRef……基準電圧
入力端子、OUT……出力端子、VCC……電源端子。FIG. 1 is a circuit connection diagram showing a configuration of an embodiment circuit of the present invention. FIG. 2 is a circuit connection diagram showing a configuration of a conventional circuit. D1 ... Light receiving element, FET ... Field effect transistor, TR1 ...
… PNP type transistor, TR2 …… NPN type transistor, R1
~ 9: resistor, C1 ~ 4 ... battery, V Ref ... reference voltage input terminal, OUT ... output terminal, V CC ... power supply terminal.
Claims (1)
素子と、 この受光素子の出力が入力に接続された比較増幅回路
と、 この比較増幅回路の出力が入力に接続された能動半導体
素子を含むインピーダンス変換回路と を備えた光受信回路において、 前記能動素子の接地電極と共通電位との間に、抵抗器お
よびコンデンサの並列回路が直列に接続され、 この並列回路の接続点から前記増幅回路への帰還路が設
けられ、 前記並列回路は、上記受光素子に到来する光信号の繰返
し周波数ではきわめて低いインピーダンスを呈する定数
に設定された ことを特徴とする光受信回路。1. A light receiving element for converting an incoming optical signal into an electric signal, a comparison amplifier circuit to which an output of the light receiving element is connected to an input, and an active semiconductor element to which an output of the comparison amplifier circuit is connected to an input. In an optical receiver circuit including an impedance conversion circuit including a resistor, a parallel circuit of a resistor and a capacitor is connected in series between the ground electrode of the active element and a common potential, and the amplifier is connected from a connection point of the parallel circuit. A return path to the circuit is provided, and the parallel circuit is set to a constant exhibiting an extremely low impedance at the repetition frequency of the optical signal reaching the light receiving element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60223314A JPH0685508B2 (en) | 1985-10-07 | 1985-10-07 | Optical receiver circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60223314A JPH0685508B2 (en) | 1985-10-07 | 1985-10-07 | Optical receiver circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6282736A JPS6282736A (en) | 1987-04-16 |
JPH0685508B2 true JPH0685508B2 (en) | 1994-10-26 |
Family
ID=16796208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60223314A Expired - Lifetime JPH0685508B2 (en) | 1985-10-07 | 1985-10-07 | Optical receiver circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0685508B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0728494U (en) * | 1993-11-11 | 1995-05-30 | 田島産業株式会社 | A wooden bathtub that uses a plastic tub body |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS488110U (en) * | 1971-06-09 | 1973-01-29 | ||
JPS5936445A (en) * | 1982-08-24 | 1984-02-28 | Matsushita Electric Ind Co Ltd | Light receiving circuit |
-
1985
- 1985-10-07 JP JP60223314A patent/JPH0685508B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6282736A (en) | 1987-04-16 |
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