JPH0685450B2 - Ferroelectric thin film element - Google Patents
Ferroelectric thin film elementInfo
- Publication number
- JPH0685450B2 JPH0685450B2 JP61004529A JP452986A JPH0685450B2 JP H0685450 B2 JPH0685450 B2 JP H0685450B2 JP 61004529 A JP61004529 A JP 61004529A JP 452986 A JP452986 A JP 452986A JP H0685450 B2 JPH0685450 B2 JP H0685450B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferroelectric thin
- ferroelectric
- semiconductor substrate
- mgo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Light Receiving Elements (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は強誘電体薄膜素子、特に焦電型の赤外線センサ
等に適した強誘電体薄膜素子に関する。TECHNICAL FIELD The present invention relates to a ferroelectric thin film element, particularly to a ferroelectric thin film element suitable for a pyroelectric infrared sensor or the like.
従来の技術 強誘電体薄膜素子は、赤外線センサのようなデバイスに
用いるのに適しており、特に半導体基板上に形成するこ
とにより、信号処理一デバイス一体型の装置を構成する
上でメリットが大である。2. Description of the Related Art Ferroelectric thin film elements are suitable for use in devices such as infrared sensors, and in particular, when formed on a semiconductor substrate, they have great merit in constructing an apparatus integrated with signal processing and one device. Is.
従来の技術の一例を第２図に示す。半導体基板１上に強
誘電体薄膜２を形成し、強誘電体薄膜２上に上部電極３
を形成したものである。例えば奥山らによって、Si基板
上にチタン酸鉛を形成したという報告がなされている。
（奥山ら，フェロエレクトリクス,1985,Vol.63,pp.243-
252） 発明が解決しようとする問題点 上記強誘電体薄膜素子において強誘電体薄膜は、半導体
基板、特にSi単結晶基板上へのエピタキシャル膜が未だ
実現されておらず、多結晶体であり分極軸が揃っていな
いため、例えばMgO基板上に配向した強誘電体薄膜に比
べ材料特性が悪い。An example of the conventional technique is shown in FIG. A ferroelectric thin film 2 is formed on a semiconductor substrate 1, and an upper electrode 3 is formed on the ferroelectric thin film 2.
Is formed. For example, Okuyama et al. Reported that lead titanate was formed on a Si substrate.
(Okuyama et al., Ferroelectrics, 1985, Vol.63, pp.243-
252) Problems to be Solved by the Invention In the above ferroelectric thin film element, the ferroelectric thin film is a polycrystalline substance because it has not been realized yet as an epitaxial film on a semiconductor substrate, especially on a Si single crystal substrate. Since the axes are not aligned, the material properties are worse than, for example, a ferroelectric thin film oriented on a MgO substrate.
本発明は上記問題点を解決するもので、半導体基板上に
強誘電体薄膜を配向させ材料特性の良い信号処理デバイ
ス一体型の強誘電体薄膜素子を実現することを目的とす
る。The present invention solves the above-mentioned problems, and an object of the present invention is to realize a ferroelectric thin film element integrated with a signal processing device by orienting a ferroelectric thin film on a semiconductor substrate and having good material characteristics.
問題点を解決するための手段 半導体基板と、半導体基板上に形成したMgO薄膜と、MgO
薄膜上に形成した強誘電体薄膜とを有する強誘電体薄膜
素子を形成し、前記MgO薄膜を（100）配向させる。Means for Solving Problems Semiconductor substrate, MgO thin film formed on semiconductor substrate, and MgO
A ferroelectric thin film element having a ferroelectric thin film formed on the thin film is formed, and the MgO thin film is (100) oriented.
作用 半導体基板上に（100）配向したMgO薄膜を作成すること
により、その上部に、分極軸方向に配向した強誘電体薄
膜を作成することができ、材料特性の良い強誘電体薄膜
素子が得られる。By forming a (100) -oriented MgO thin film on a semiconductor substrate, a ferroelectric thin film oriented in the direction of the polarization axis can be created on top of it, and a ferroelectric thin-film device with excellent material properties can be obtained. To be
実施例 第１図に本発明の一実施例を示す。半導体基板４上にMg
O薄膜５を形成し、MgO薄膜５上に下部電極６を形成し、
下部電極６上に強誘電体薄膜７を形成し、強誘電体薄膜
７上に上部電極８を形成したものである。Embodiment FIG. 1 shows an embodiment of the present invention. Mg on the semiconductor substrate 4
The O thin film 5 is formed, the lower electrode 6 is formed on the MgO thin film 5,
The ferroelectric thin film 7 is formed on the lower electrode 6, and the upper electrode 8 is formed on the ferroelectric thin film 7.
半導体基板４としてシリコンウエハを用い、この上に
（100）配向したMgO薄膜５をRFマグネトロンスパッタリ
ング法を用いて作成した。（100）面および（111）面の
二種類のシリコンウエハについて試したが、どちらの基
板上でも（100）配向したMgO薄膜が得られた。A silicon wafer was used as the semiconductor substrate 4, and a (100) -oriented MgO thin film 5 was formed thereon by the RF magnetron sputtering method. Two types of (100) and (111) silicon wafers were tested, and (100) -oriented MgO thin films were obtained on both substrates.
上記MgO薄膜５上の下部電極６として（100）配向した白
金を用いた。この白金電極もRFマグネトロンスパッタリ
ング法によって作成した。また、強誘電体薄膜７の作成
にもRFマグネトロンスパッタリング法を用いた。上記Mg
O薄膜５と上記下部電極６と強誘電体薄膜７の作成条件
を表１に示す。As the lower electrode 6 on the MgO thin film 5, (100) -oriented platinum was used. This platinum electrode was also prepared by the RF magnetron sputtering method. Further, the RF magnetron sputtering method was also used for forming the ferroelectric thin film 7. Above Mg
Table 1 shows conditions for forming the O thin film 5, the lower electrode 6, and the ferroelectric thin film 7.
なお、上記下部電極６を設けた場合と、下部電極６を付
けずに上記MgO薄膜５上に直接強誘電体薄膜７を作成し
た場合とを実験した。下部電極６上、MgO薄膜５上どち
らにおいても（001）配向した強誘電体薄膜７が得られ
た。 Experiments were carried out in the case where the lower electrode 6 was provided and in the case where the ferroelectric thin film 7 was directly formed on the MgO thin film 5 without the lower electrode 6. A ferroelectric thin film 7 having a (001) orientation was obtained on both the lower electrode 6 and the MgO thin film 5.
下記化学式で表される強誘電体薄膜７は強誘電体材料、
特に焦電型赤外線センサとして特性が優れており、分極
軸を揃えることによりさらに特性向上を計ることができ
る。The ferroelectric thin film 7 represented by the following chemical formula is a ferroelectric material,
In particular, it has excellent characteristics as a pyroelectric infrared sensor, and the characteristics can be further improved by aligning the polarization axes.
PbxLayTizZrwO3 ａ）0.7≦ｘ≦1,0.9≦ｘ＋ｙ≦1,0.95≦ｚ≦1,w＝０ ｂ）ｘ＝1,y＝0,0.45≦ｚ＜1,z＋ｗ＝１ ｃ）0.83≦ｘ≦1,x＋ｙ＝1,0.5≦ｚ＜1,0.96≦ｚ＋ｗ≦
１ また、上記組成における上記強誘電体材料は正方晶とな
り分極軸が（001）方向であるため、（001）配向させる
ことにより電圧感度の高い焦電型赤外線センサを得るこ
とができる。Pb x La y Ti z Zr w O 3 a) 0.7 ≦ x ≦ 1,0.9 ≦ x + y ≦ 1,0.95 ≦ z ≦ 1, w = 0 b) x = 1, y = 0,0.45 ≦ z <1, z + w = 1 c) 0.83 ≦ x ≦ 1, x + y = 1,0.5 ≦ z <1,0.96 ≦ z + w ≦
1. Further, since the ferroelectric material in the above composition becomes a tetragonal crystal and the polarization axis is in the (001) direction, it is possible to obtain a pyroelectric infrared sensor having high voltage sensitivity by orienting in the (001) orientation.
上記組成のうちｘ＋ｙ＝1,z＝１−x/4,w＝０である試料
を作成し、そのＸ線回折を測定した。その結果（001）
と（100）以上の信号は殆ど観測れず、どちらかに配向
した微結晶の集合となっていることがわかる。A sample having x + y = 1, z = 1-x / 4, w = 0 in the above composition was prepared, and its X-ray diffraction was measured. The result (001)
Signals above (100) and (100) were hardly observed, indicating that they were aggregates of fine crystals oriented in either direction.
また、次式に示すαを（001）配向率として、各Ｘにつ
いてのαを求めた。この結果を表２に示す。Further, α for each X was determined by using α in the following equation as the (001) orientation ratio. The results are shown in Table 2.
α＝I(001)／（I(100)＋I(001)） I(100)：（10
0）ピークのカウント数 I(001)：（001）ピークのカウント数 以上のように、シリコンウエハ上にMgO薄膜を作成する
ことにより、配向し、分極軸の揃った強誘電体薄膜を作
成することができ、材料特性の良い強誘電体薄膜素子を
作成できる。また、半導体上に作成しているため、信号
処理デバイス一体型として雑音低下、小型化を計ること
ができる。α = I (001) / (I (100) + I (001) ) I (100) : (10
0) Peak count number I (001) : (001) Peak count number As described above, by forming the MgO thin film on the silicon wafer, it is possible to form a ferroelectric thin film that is oriented and has a uniform polarization axis, and it is possible to create a ferroelectric thin film element having good material properties. Further, since it is formed on a semiconductor, noise reduction and size reduction can be achieved as a signal processing device integrated type.
発明の効果 本発明によれば、半導体基板上に（100）配向したMgO薄
膜を作成することにより、分極軸方向に配向した強誘電
体薄膜を半導体基板上に作成することができるようにな
り、材料特性の良い強誘電体薄膜素子が得られる。EFFECTS OF THE INVENTION According to the present invention, by forming a (100) -oriented MgO thin film on a semiconductor substrate, a ferroelectric thin film oriented in the polarization axis direction can be formed on the semiconductor substrate. A ferroelectric thin film element having good material properties can be obtained.
第１図は本発明の一実施例における強誘電体薄膜素子の
断面図、第２図は従来例を示す断面図である。 ４……半導体基板、５……MgO薄膜、６……下部電極、
７……強誘電体薄膜、８……上部電極。FIG. 1 is a sectional view of a ferroelectric thin film element in one embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional example. 4 ... semiconductor substrate, 5 ... MgO thin film, 6 ... lower electrode,
7 ... Ferroelectric thin film, 8 ... Upper electrode.
Claims (5)
O薄膜と、MgO薄膜上に形成した強誘電体薄膜とを有し、
前記MgO薄膜が（100）配向している強誘電体薄膜素子。1. A semiconductor substrate and Mg formed on the semiconductor substrate
It has an O thin film and a ferroelectric thin film formed on the MgO thin film,
A ferroelectric thin film device in which the MgO thin film is (100) oriented.
１ のいずれかの組成を有する特許請求の範囲第１項記載の
強誘電体薄膜素子。2. The ferroelectric thin film is represented by Pb x La y Ti z Zr w O 3 , and a) 0.7 ≦ x ≦ 1,0.9 ≦ x + y ≦ 1,0.95 ≦ z ≦ 1, w = 0 b) x = 1, y = 0,0.45 ≦ z <1, z + w = 1 c) 0.83 ≦ x ≦ 1, x + y = 1,0.5 ≦ z <1,0.96 ≦ z + w ≦
The ferroelectric thin film element according to claim 1, wherein the ferroelectric thin film element has a composition according to claim 1.
許請求の範囲第１項記載の強誘電体薄膜素子。3. The ferroelectric thin film element according to claim 1, wherein the orientation surface of the ferroelectric thin film is (001).
体基板を下部電極とした特許請求の範囲第１項記載の強
誘電体薄膜素子。4. A ferroelectric thin film element according to claim 1, wherein an upper electrode is formed on the ferroelectric thin film and the semiconductor substrate is used as a lower electrode.
O薄膜と強誘電体薄膜との間に形成した下部電極を有
し、前記下部電極が（100）配向している白金薄膜であ
ることを特徴とする特許請求の範囲第１項記載の強誘電
体薄膜素子。5. An upper electrode formed on a ferroelectric thin film, and Mg
The ferroelectric film according to claim 1, further comprising a lower electrode formed between the O thin film and the ferroelectric thin film, wherein the lower electrode is a (100) -oriented platinum thin film. Body thin film element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61004529A JPH0685450B2 (en) | 1986-01-13 | 1986-01-13 | Ferroelectric thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61004529A JPH0685450B2 (en) | 1986-01-13 | 1986-01-13 | Ferroelectric thin film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62162369A JPS62162369A (en) | 1987-07-18 |
| JPH0685450B2 true JPH0685450B2 (en) | 1994-10-26 |
Family
ID=11586571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61004529A Expired - Fee Related JPH0685450B2 (en) | 1986-01-13 | 1986-01-13 | Ferroelectric thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0685450B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0672800B2 (en) * | 1986-03-12 | 1994-09-14 | 松下電器産業株式会社 | Pyroelectric infrared sensor |
| US5413667A (en) * | 1992-11-04 | 1995-05-09 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector fabricating method |
| JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
| EP0657718B1 (en) * | 1993-12-07 | 1998-08-26 | Matsushita Electric Industrial Co., Ltd. | Capacitance sensor and method of manufacturing the same |
| US5612536A (en) * | 1994-02-07 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
| JP2011013224A (en) * | 2010-08-06 | 2011-01-20 | Hochiki Corp | Manufacturing method of infrared detection element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60131704A (en) * | 1983-12-20 | 1985-07-13 | 松下電器産業株式会社 | Pyroelectric heat detecting element |
| JPS61185808A (en) * | 1985-02-14 | 1986-08-19 | 日本電気株式会社 | Making process of orientation thin film for ferrodielectric compound |
-
1986
- 1986-01-13 JP JP61004529A patent/JPH0685450B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62162369A (en) | 1987-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |