JPH0680538B2 - Semiconductor laser light source device - Google Patents
Semiconductor laser light source deviceInfo
- Publication number
- JPH0680538B2 JPH0680538B2 JP59117624A JP11762484A JPH0680538B2 JP H0680538 B2 JPH0680538 B2 JP H0680538B2 JP 59117624 A JP59117624 A JP 59117624A JP 11762484 A JP11762484 A JP 11762484A JP H0680538 B2 JPH0680538 B2 JP H0680538B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser light
- light sources
- light source
- source device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は複数の半導体レーザ光源から成る集積回路を備
える半導体レーザ光源装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser light source device including an integrated circuit including a plurality of semiconductor laser light sources.
背景技術とその問題点 従来、複数の半導体レーザ光源（レーザダイオード）が
モノリシツクに又はハイブリツドに形成された集積回路
を備える半導体レーザ光源装置が提案されている。2. Description of the Related Art Conventionally, there has been proposed a semiconductor laser light source device including an integrated circuit in which a plurality of semiconductor laser light sources (laser diodes) are monolithically or hybridized.
かかる半導体レーザ光源装置の集積回路の複数の半導体
レーザ光源間の間隔は100μｍ〜150μｍ程度と狭いの
で、各半導体レーザ光源の前方光出力を各別に検出する
ために、その各後方光を光検出器を用いて各別に検出し
ようとしても、後方光が分離できないために、実現不可
能であった。Since the interval between the plurality of semiconductor laser light sources in the integrated circuit of such a semiconductor laser light source device is as narrow as about 100 μm to 150 μm, in order to detect the front light output of each semiconductor laser light source separately, each rear light thereof is detected by a photodetector. It was impossible to detect each of them by using, because the backward light could not be separated.
発明の目的 かかる点に鑑み本発明は、複数の半導体レーザ光源から
成る集積回路を備える半導体レーザ光源装置に於いて、
各半導体レーザ光源の前方光出力を各別に検出すること
のできるものを提案しようとするものである。In view of the above points, the present invention provides a semiconductor laser light source device including an integrated circuit including a plurality of semiconductor laser light sources,
An object of the present invention is to propose a device capable of individually detecting the forward light output of each semiconductor laser light source.
発明の概要 本発明による半導体レーザ光源装置は、複数の半導体レ
ーザ光源から成る集積回路と、複数の半導体レーザ光源
よりの複数の後方光が共通に入射せしめられるマイクロ
レンズと、このマイクロレンズで分離された複数の後方
光を複数の光検出器に各別に入射せしめて、この複数の
光検出器により複数の半導体レーザ光源よりの前方光出
力を検出するようにしたことを特徴とするものである。SUMMARY OF THE INVENTION A semiconductor laser light source device according to the present invention includes an integrated circuit composed of a plurality of semiconductor laser light sources, a microlens into which a plurality of backward lights from the plurality of semiconductor laser light sources are commonly made incident, and a microlens which is separated by the microlens. In addition, a plurality of backward lights are individually made incident on a plurality of photodetectors, and the forward light outputs from the plurality of semiconductor laser light sources are detected by the plurality of photodetectors.
かかる本発明によれば、複数の半導体レーザ光源から成
る集積回路を備える半導体レーザ光源装置に於いて、各
半導体レーザ光源の前方光出力を各別に検出することの
できるものを得ることができる。According to the present invention, it is possible to obtain a semiconductor laser light source device including an integrated circuit composed of a plurality of semiconductor laser light sources, which can detect the forward light output of each semiconductor laser light source separately.
実施例 以下に、第１図及び第２図を参照して、本発明の一実施
例を詳細に説明する。第１図は本実施例装置の一部の平
面図、第２図は本実施例装置の全体の断面図である。Embodiment An embodiment of the present invention will be described in detail below with reference to FIGS. 1 and 2. FIG. 1 is a plan view of a part of the apparatus of this embodiment, and FIG. 2 is a sectional view of the entire apparatus of this embodiment.
第１図及び第２図に於いて、（１）は発光部、（２）は
受光部、（３）はプリント配線基板である。発光部
（１）は円形のFe−Co等の金属基板上に、Cu等の金属か
ら成るヒートシンクとしての半円筒状のヘッダ（上部は
閉塞されている）（５）が基板（４）に取付けられ、こ
のヘッダ（５）の平面状の端面の上部に、例えば２つの
半導体レーザ光源（レーザダイオード）から成るモノリ
シツク集積回路（レーザダイオードペレツト）（６）が
取付けられている。（７）は円柱状の分布屈折率形レン
ズで、そのデータは例えばn0＝1.602,g＝0.590mm-1（但
しλ＝830nm）n2（ｒ）＝▲ｎ2 0▼｛１−（gr）２｝ φ（直径）＝1.0mm,L（長さ）＝2.0mm ｆ＝1.14mm（但しλ＝780nm） である。このレンズ（７）の下端は基板（４）の中心孔
（4a）に嵌合せしめられ、上端はヘツダ（５）の端面の
凹みに嵌合せしめられる。（８）はTO−18ステムで、実
際は３本あるが、１本は図示を省略してある。ステム
（８）の上端は図示せさざるも、集積回路（６）の各レ
ーザダイオードに接続線を介して接続されている。この
ステム（８）は、基板（４）の透孔に充填されたガラス
充填材（９）を介して基板（４）の下方に延在せしめら
れ、プリント配線基板に取付けられると共に、その配線
導電層（図示せず）に接続される。In FIGS. 1 and 2, (1) is a light emitting portion, (2) is a light receiving portion, and (3) is a printed wiring board. The light emitting part (1) is a semi-cylindrical header (upper part is closed) (5) as a heat sink made of metal such as Cu attached to the substrate (4) on a circular metal substrate such as Fe-Co. A monolithic integrated circuit (laser diode pellet) (6) composed of, for example, two semiconductor laser light sources (laser diodes) is attached to the upper portion of the planar end surface of the header (5). (7) is a cylindrical distributed index lens, the data of which is, for example, n 0 = 1.602, g = 0.590 mm −1 (where λ = 830 nm) n 2 (r) = ▲ n 2 0 ▼ {1- ( gr) 2 } φ (diameter) = 1.0 mm, L (length) = 2.0 mm f = 1.14 mm (where λ = 780 nm). The lower end of this lens (7) is fitted in the center hole (4a) of the substrate (4), and the upper end is fitted in the recess of the end face of the header (5). (8) is a TO-18 stem. Actually, there are three stems, but one is not shown. Although not shown, the upper end of the stem (8) is connected to each laser diode of the integrated circuit (6) via a connecting wire. The stem (8) is made to extend below the substrate (4) through a glass filler (9) filled in the through hole of the substrate (4), and is attached to the printed wiring board and its wiring conductivity is maintained. Connected to a layer (not shown).
受光部（２）に於て、（10）はエポキシ樹脂等の半円柱
状の透明ブロツクで、その内部に一対の光検出器（フオ
トダイォード）（11a），（11b）が埋めこまれている。
（12）はブロック（10）の両側に多数突出されたステム
で、実際に使用するのはそのうちの３本である。このス
テム（12）は、その内端物がブロック（10）の内部で光
検出器（11a），（11b）に接続されると共に、外端部が
プリント基板（３）に取付けられると共に、その配線導
電層（図示せず）に接続される。そして、プリント配線
基板（３）に、発光部（１）の基板（４）の中心孔に対
応する透孔（3a）が突設され、又、これら透孔（4a），
（3a）に対応する位置に上述の光検知器（11a），（11
b）が位置するように、受光部（２）の発光部（１）及
びプリント基板（３）に対する位置決めが行なわれる。
そして、発光部（１）の集積回路（６）の２つの半導体
レーザ光源よりの各後方光a,bがレンズ（７）によつて
分離され、夫々各別に光検出器（11a），（11b）に入射
して、焦点を結ぶようになされる。In the light receiving section (2), (10) is a semi-cylindrical transparent block made of epoxy resin or the like, in which a pair of photodetectors (photodiodes) (11a), (11b) are embedded.
A large number of stems (12) are projected on both sides of the block (10), and three of them are actually used. The stem (12) has its inner end connected to the photodetectors (11a), (11b) inside the block (10), and its outer end attached to the printed board (3). It is connected to a wiring conductive layer (not shown). The printed wiring board (3) is provided with a through hole (3a) corresponding to the center hole of the substrate (4) of the light emitting section (1), and these through holes (4a),
At the position corresponding to (3a), the photodetectors (11a), (11
The light receiving part (2) is positioned with respect to the light emitting part (1) and the printed circuit board (3) so that b) is positioned.
Then, the respective backward lights a and b from the two semiconductor laser light sources of the integrated circuit (6) of the light emitting section (1) are separated by the lens (7), and the photodetectors (11a) and (11b) are respectively separated. ) Is incident, and is made to focus.
集積回路（６）の一対の半導体レーザ光源とレンズ
（７）との間の距離を0.6mm、レンズ（７）と一対の光
検出器（11a），（11b）との間の距離を6.4mmに選ぶ
と、約6.5倍の倍率となり、レンズ（７）の入射側のNA
が0.3で、集積回路（６）の一対の半導体レーザ光源の
高さ0.05mm（その間の間隔0.1mmに相当）に対して、横
収差の最大値は0.1mm（スポツト径が0.2mmの場合）とな
る。一方像高は0.33mmであるから、一対の半導体レーザ
光源の像は２つの光検出器（11a），（11b）上に分離し
て結像される。The distance between the pair of semiconductor laser light sources of the integrated circuit (6) and the lens (7) is 0.6 mm, and the distance between the lens (7) and the pair of photodetectors (11a) and (11b) is 6.4 mm. If you select, the magnification will be about 6.5 times, and the NA on the incident side of the lens (7)
Is 0.3, and the height of the pair of semiconductor laser light sources of the integrated circuit (6) is 0.05 mm (corresponding to the interval of 0.1 mm), the maximum lateral aberration is 0.1 mm (when the spot diameter is 0.2 mm). Becomes On the other hand, since the image height is 0.33 mm, the images of the pair of semiconductor laser light sources are separately formed on the two photodetectors (11a) and (11b).
かくして、一対の光検出器（11a），（11b）によつて、
集積回路（６）の一対の半導体レーザ光源よりの前方向
出力を各別に検出することができる。Thus, by the pair of photodetectors (11a) and (11b),
The forward outputs from the pair of semiconductor laser light sources of the integrated circuit (6) can be detected separately.
次に、第３図及び第４図を参照して、本発明の他の実施
例を説明するも、本実施例はマイクロレンズとして、球
状レンズ（７′）を用いた場合であり、その他の構成
は、第１図及び第２図の実施例と略同様なので、第３図
及び第４図に於いて、第１図及び第２図と対応する部分
には同一符号を付し重複説明を省略すると共に、一部図
示を省略する。Another embodiment of the present invention will now be described with reference to FIGS. 3 and 4, but this embodiment uses a spherical lens (7 ') as a microlens, and Since the structure is substantially the same as that of the embodiment shown in FIGS. 1 and 2, parts corresponding to those shown in FIGS. 1 and 2 are designated by the same reference numerals in FIGS. Along with the omission, some illustrations are omitted.
このレンズ（７′）はφ（直径）＝1.5mm,n＝1.5,f＝1.
125mmのものである。そして、集積回路（６）の一対の
半導体レーザ光源とレンズ（７′）との間の距離を0.6m
m、レンズ（７′）と一対の光検出器（11a），（11b）
との間の距離を4.1mmに選ぶと、約５倍の倍率となり、
レンズ（７′）の入射側のNAが0.3で、集積回路（６）
の一対の半導体レーザ光源の高さ0.05mmに対して、横収
差は0.2mm（スポット径が0.4mmの場合）となる。一方像
高は0.25mmであるから、一対の半導体レーザ光源の像は
２つの光検出器（11a），（11b）上に分離されて結像さ
れる。This lens (7 ') is φ (diameter) = 1.5mm, n = 1.5, f = 1.
It is 125 mm. The distance between the pair of semiconductor laser light sources of the integrated circuit (6) and the lens (7 ') is 0.6 m.
m, lens (7 ') and a pair of photodetectors (11a), (11b)
If you choose a distance of 4.1mm, the magnification will be about 5 times,
NA on the incident side of the lens (7 ') is 0.3, and the integrated circuit (6)
When the height of the pair of semiconductor laser light sources is 0.05 mm, the lateral aberration is 0.2 mm (when the spot diameter is 0.4 mm). On the other hand, since the image height is 0.25 mm, the images of the pair of semiconductor laser light sources are separated and formed on the two photodetectors (11a) and (11b).
本発明による半導体レーザ光源装置は、光学式デイス
ク、光学式カード等に対する光学式ヘツドあるいは、レ
ーザプリンタのヘツド等に適用し得るが、前者への適用
例を第５図を参照して説明する。The semiconductor laser light source device according to the present invention can be applied to an optical head for an optical disc, an optical card or the like, or a head of a laser printer, etc. An example of application to the former will be described with reference to FIG.
第５図は光学式再生ヘツドを示し、発光部（１）の集積
回路（６）の一対の半導体レーザ光源よりの前方光A,B
はコリメータレンズ（15）−偏光ビームスプリツタ（1
6）−1/4波長板を（17）を通じて対物レンズ（18）に入
射し、ここで集束せしめられて光学式デイスク（19）に
入射せしめられる。発光部（１）の集積回路（６）の一
対の半導体レーザ光源への駆動電流を一定電流となし、
受光部（２）の一対の光検出器（11a），（11b）の検出
出力にて駆動電流に負帰還を掛けて一定にする。そし
て、光学式デイスク（19）よりの２本の反射ビーム
Ａ′,B′が対物レンズ（18）−1/4波長板（17）−偏光
ビームスプリッタ（16）の反射面（16a）−結像レンズ
（20）を通じて一対の光検出器（21A），（21B）に入射
せしめられて、ノイズの少ない再生信号が検出される。FIG. 5 shows an optical reproducing head, which is a front light A, B from a pair of semiconductor laser light sources of the integrated circuit (6) of the light emitting section (1).
Collimator lens (15) -polarized beam splitter (1
6) The -1/4 wave plate is made incident on the objective lens (18) through (17), where it is focused and made incident on the optical disc (19). A constant driving current is applied to the pair of semiconductor laser light sources of the integrated circuit (6) of the light emitting section (1),
The drive current is negatively fed back by the detection output of the pair of photodetectors (11a) and (11b) of the light receiving section (2) to make it constant. The two reflected beams A'and B'from the optical disk (19) are combined with the objective lens (18) -1/4 wave plate (17) -the reflecting surface (16a) of the polarization beam splitter (16) -connection. A reproduction signal having a small amount of noise is detected by being incident on the pair of photodetectors (21A) and (21B) through the image lens (20).
上述せる本発明によれば、複数の半導体レーザ光源から
成る集積回路を備える半導体レーザ光源装置に於いて、
各半導体レーザ光源の前方光出力を各別に検出すること
のできるものを得ることができる。According to the present invention described above, in a semiconductor laser light source device including an integrated circuit composed of a plurality of semiconductor laser light sources,
It is possible to obtain a device capable of separately detecting the forward light output of each semiconductor laser light source.
発明の効果 上述せる本発明によれば、複数の半導体レーザ光源から
成る集積回路を備える半導体レーザ光源装置に於いて、
各半導体レーザ光源の前方光出力を各別に検出すること
のできるものを得ることができる。又、本発明によれ
ば、複数の半導体レーザ光源と、半導体レーザ光源の後
方側に配されて、複数の半導体レーザ光源より複数の後
方光が共通に入射せしめられるマイクロレンズをヘッダ
に一体的に取り付けてなるから、複数の半導体レーザ光
源とマイクロレンズを一体化した場合でも、半導体レー
ザ光源の後方から出射される光を受光するために複雑な
光学系を組む必要がなく、装置の小型化を実現すること
ができる。更に、本発明によれば、発光部を構成する複
数の半導体レーザ光源とマイクロレンズをヘッダに取り
付け、マイクロレンズをヘッダ及び基板によって保持す
るので、複数の半導体レーザ光源とマイクロレンズとの
相対的な位置決めが可能となる。即ち、各構成要素の位
置調整を、特に半導体レーザとマイクロレンズとの位置
決めが確実になされないと、半導体レーザから出射され
る光がマイクロレンズを通過しない可能性が生じるが、
本発明によればそのようなことはない。更に、発光部と
受光部とを同一の回路基板に基板を挟んで配設すること
によって行うようにしたので、発光部と受光部の相対的
な位置決めを行うことが可能となる。更に、本発明によ
れば、複数の半導体レーザ光源とマイクロレンズの位置
もヘッダへの取り付けによって決めることができるの
で、複雑な調整作業を必要としない。更に、本発明によ
れば、発光部と受光部が空間的に完全に分離されている
ので、両者の相対的な位置が正しくできていないと、マ
イクロレンズを透過した光が光検出器を備える受光部に
到達しない可能性が生じるが、本発明の場合にはそのよ
うなことはない。Effects of the Invention According to the present invention described above, in a semiconductor laser light source device including an integrated circuit including a plurality of semiconductor laser light sources,
It is possible to obtain a device capable of separately detecting the forward light output of each semiconductor laser light source. Further, according to the present invention, a plurality of semiconductor laser light sources and a microlens, which is arranged on the rear side of the semiconductor laser light sources and allows a plurality of rear lights to be commonly incident from the plurality of semiconductor laser light sources, are integrally formed in the header. Since it is mounted, even if a plurality of semiconductor laser light sources and microlenses are integrated, it is not necessary to form a complicated optical system to receive the light emitted from the rear of the semiconductor laser light sources, and the size of the device can be reduced. Can be realized. Further, according to the present invention, since the plurality of semiconductor laser light sources and the microlenses forming the light emitting unit are attached to the header and the microlenses are held by the header and the substrate, the plurality of semiconductor laser light sources and the microlenses are relatively fixed. Positioning is possible. That is, if the position adjustment of each component, especially the positioning of the semiconductor laser and the microlens is not surely performed, light emitted from the semiconductor laser may not pass through the microlens.
This is not the case with the present invention. Further, since the light emitting portion and the light receiving portion are arranged on the same circuit board with the substrates sandwiched therebetween, the light emitting portion and the light receiving portion can be positioned relative to each other. Further, according to the present invention, since the positions of the plurality of semiconductor laser light sources and the microlenses can be determined by attaching them to the header, complicated adjustment work is not required. Further, according to the present invention, since the light emitting portion and the light receiving portion are spatially completely separated from each other, the light transmitted through the microlens is provided with the photodetector unless the relative positions of the two are correctly formed. There is a possibility that it will not reach the light receiving portion, but this is not the case in the present invention.
第１図及び第２図は本発明による半導体レーザ光源装置
の一実施例の一部の平面図及び全体の断面図、第３図及
び第４図は本発明の他の実施例の一部の平面図及び全体
の断面図、第５図は本発明を適用した光学式ヘッドの一
例を示す配置図である。 （１）は発光部、（２）は受光部、（６）は複数の半導
体レーザ光源から成る集積回路、（７），（７′）はマ
イクロレンズ、（11a），（11b）は複数の光検出器であ
る。1 and 2 are a plan view and a sectional view of a part of an embodiment of a semiconductor laser light source device according to the present invention, and FIGS. 3 and 4 are a part of another embodiment of the present invention. FIG. 5 is a plan view and a sectional view of the whole, and FIG. 5 is a layout view showing an example of an optical head to which the present invention is applied. (1) is a light emitting part, (2) is a light receiving part, (6) is an integrated circuit composed of a plurality of semiconductor laser light sources, (7) and (7 ') are microlenses, and (11a) and (11b) are a plurality of It is a photodetector.
Claims (1)
導体レーザ光源が取り付けられるヘッダと、上記ヘッダ
が取り付けられる基板と、上記ヘッダにより一端が保持
され他端が上記基板により保持されるとともに上記ヘッ
ダの上記半導体レーザ光源の後方側に配されて上記複数
の半導体レーザ光源より複数の後方光が共通に入射せし
められるマイクロレンズとからなる発光部と、 上記マイクロレンズによって分離された後方光を透過さ
せる開口部が設けられ、上記発光部が取り付けられる回
路基板と、 上記回路基板を挟むように上記回路基板に取り付けら
れ、 上記マイクロレンズで分離された複数の後方光を各別に
入射せられる複数の光検出器を有する受光部とを備えて
なることを特徴とする半導体レーザ光源装置。1. A plurality of semiconductor laser light sources, a header to which the plurality of semiconductor laser light sources are attached, a substrate to which the header is attached, one end held by the header and the other end held by the substrate, and A light emitting portion, which is arranged on the rear side of the semiconductor laser light source of the header and includes a microlens to which a plurality of rearlights are commonly made incident from the plurality of semiconductor laser light sources, and a rearlight separated by the microlens is transmitted. A circuit board to which the light emitting section is attached, and a plurality of rear lights, which are attached to the circuit board so as to sandwich the circuit board and which are separated from each other by the microlens, respectively. A semiconductor laser light source device comprising: a light receiving section having a photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117624A JPH0680538B2 (en) | 1984-06-08 | 1984-06-08 | Semiconductor laser light source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117624A JPH0680538B2 (en) | 1984-06-08 | 1984-06-08 | Semiconductor laser light source device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60263349A JPS60263349A (en) | 1985-12-26 |
| JPH0680538B2 true JPH0680538B2 (en) | 1994-10-12 |
Family
ID=14716346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59117624A Expired - Lifetime JPH0680538B2 (en) | 1984-06-08 | 1984-06-08 | Semiconductor laser light source device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680538B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4942584A (en) * | 1988-06-22 | 1990-07-17 | Morihiro Karaki | Semiconductor laser apparatus driving system |
| JP3116639B2 (en) * | 1992-06-08 | 2000-12-11 | 日産自動車株式会社 | Flywheel |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5874359U (en) * | 1981-11-13 | 1983-05-19 | 株式会社日立製作所 | Semiconductor laser array device |
| JPS60127633U (en) * | 1984-02-06 | 1985-08-27 | 日本電気株式会社 | Multiple beam laser light source |
-
1984
- 1984-06-08 JP JP59117624A patent/JPH0680538B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60263349A (en) | 1985-12-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |