JPH0677614A - Metallic base board - Google Patents
Metallic base boardInfo
- Publication number
- JPH0677614A JPH0677614A JP22424392A JP22424392A JPH0677614A JP H0677614 A JPH0677614 A JP H0677614A JP 22424392 A JP22424392 A JP 22424392A JP 22424392 A JP22424392 A JP 22424392A JP H0677614 A JPH0677614 A JP H0677614A
- Authority
- JP
- Japan
- Prior art keywords
- metal base
- circuit pattern
- metal
- insulating layer
- primary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，高い放熱特性が要求さ
れる金属ベ−ス基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal base substrate which is required to have high heat dissipation characteristics.
【０００２】[0002]
【従来の技術】一般的に、金属ベ−ス基板は、ベース金
属の上に絶縁層を介して回路パターンを形成したもの
で、従来においては、例えば、特開平３−２１５９８７
号公報に記載されるものがある。この金属ベース基板
は、パワー部品の自己発熱による熱の放熱に重点をお
き、絶縁樹脂層に無機物を充填しかつ絶縁樹脂層を薄く
することで放熱特性を向上させているものである。2. Description of the Related Art Generally, a metal base substrate is one in which a circuit pattern is formed on a base metal via an insulating layer. In the prior art, for example, JP-A-3-215987.
There is one described in Japanese Patent Publication. In this metal base substrate, the heat radiation characteristics are improved by emphasizing the heat radiation by the self-heating of the power component and filling the insulating resin layer with an inorganic substance and thinning the insulating resin layer.
【０００３】ところで、このような金属ベース基板をト
ランス等のパワー部品が搭載される基板として適用した
場合には、図６に示すような構造となる。すなわち、金
属ベース基板は、ベ−ス金属５の上に絶縁層４を介し１
次回路パタ−ン２と２次回路パタ−ン３とが形成された
構造で、ベ−ス金属５は、安全上等の観点より接地され
るている。By the way, when such a metal base substrate is applied as a substrate on which power components such as a transformer are mounted, a structure as shown in FIG. 6 is obtained. That is, the metal base substrate is formed on the base metal 5 with the insulating layer 4 interposed therebetween.
In the structure in which the secondary circuit pattern 2 and the secondary circuit pattern 3 are formed, the base metal 5 is grounded for safety reasons.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな従来技術では、基本的に放熱特性に重点をおいた構
造となっているため、ベ−ス金属を接地して、高電圧電
源用に使用する場合、回路パターンと金属ベースとの間
の電位差が高電位差となり、絶縁層が劣化しやすく、ベ
−ス金属と回路間との絶縁特性や絶縁耐圧特性が問題と
なる。特に、絶縁層の劣化が激しいものをそのまま使用
すると、１次回路パターンと２次回路パターンとがショ
ートしてしまう可能性もある。ところで、絶縁特性や絶
縁耐圧性を向上させるには、絶縁層を厚くすれば良い
が、これでは放熱特性が低下してしまう。However, in such a conventional technique, since the structure is basically focused on the heat dissipation characteristic, the base metal is grounded and used for a high voltage power source. In that case, the potential difference between the circuit pattern and the metal base becomes a high potential difference, the insulating layer is easily deteriorated, and the insulation characteristic between the base metal and the circuit and the withstand voltage characteristic become a problem. Especially, if the insulating layer whose deterioration is severe is used as it is, the primary circuit pattern and the secondary circuit pattern may be short-circuited. By the way, in order to improve the insulation characteristics and the withstand voltage, it is sufficient to make the insulation layer thick, but this causes the heat dissipation characteristics to deteriorate.
【０００５】そこで、本発明の目的は、放熱特性を低下
させることなく、ショート等の事故を防止することがで
きる金属ベース基板を提供することにある。Therefore, an object of the present invention is to provide a metal base substrate capable of preventing an accident such as a short circuit without deteriorating heat dissipation characteristics.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するため
の金属ベース基板は、複数の回路パターンごとに、金属
板上に絶縁層を介して該回路パターンが形成された金属
ベース体を備え、複数の該金属ベース体は、相互間に絶
縁物質が介在して接続されていることを特徴とするもの
である。ここで、前記絶縁物質は、実体のある絶縁体
（固体）であっても、絶縁性を有する気体、例えば、空
気等の不活性気体であってもよい。A metal base substrate for achieving the above object comprises, for each of a plurality of circuit patterns, a metal base body in which the circuit patterns are formed on a metal plate via an insulating layer, The plurality of metal base bodies are characterized in that they are connected to each other with an insulating material interposed therebetween. Here, the insulating material may be a solid insulator (solid) or an insulating gas, for example, an inert gas such as air.
【０００７】[0007]
【作用】各回路パターンごとに、金属ベース体が形成さ
れ、しかも各金属ベース体相互間には絶縁物質が介在し
ているので、回路パターンごとに要求される条件、例え
ば、放熱性能や絶縁性能等に応じて、各金属ベース体の
絶縁層の厚さを変えることにより、全ての条件を満足さ
せることができる。すなわち、放熱特性を低下させるこ
となく、十分な絶縁性能を確保してショート等の事故を
防止することも可能である。Since the metal base body is formed for each circuit pattern, and the insulating material is interposed between the metal base bodies, conditions required for each circuit pattern, such as heat dissipation performance and insulation performance All the conditions can be satisfied by changing the thickness of the insulating layer of each metal base body according to the above. That is, it is possible to secure sufficient insulation performance and prevent accidents such as short circuits without degrading the heat dissipation characteristics.
【０００８】特に、電源部品用の１次回路パターン及び
２次回路パターンが形成され、各回路パターンごとに金
属ベース体を形成したものでは、２次側の金属ベースの
みを接地すれば、１次側の金属ベースは非接地状態とな
り、１次回路パターンと１次側金属ベースと間の電位差
は小さくなるので、１次側絶縁層の絶縁性能を考慮する
必要がほとんどなくなる。また、２次回路パターンは、
あまり高電圧がかからないので、２次側絶縁層の絶縁性
能もあまり考慮する必要がない。したがって、放熱性に
重点をおいて、１次側及び２次側の絶縁層を比較的薄く
しても、必要とされる絶縁性能を満足させることができ
る。Particularly, in the case where the primary circuit pattern and the secondary circuit pattern for the power supply component are formed and the metal base body is formed for each circuit pattern, if only the metal base on the secondary side is grounded, the primary Since the metal base on the side is not grounded, the potential difference between the primary circuit pattern and the metal base on the primary side becomes small, so that it is almost unnecessary to consider the insulation performance of the primary side insulating layer. The secondary circuit pattern is
Since a high voltage is not applied so much, it is not necessary to consider the insulation performance of the secondary insulating layer too much. Therefore, the required insulation performance can be satisfied even if the insulating layers on the primary side and the secondary side are made relatively thin, focusing on heat dissipation.
【０００９】[0009]
【実施例】以下、本発明に係る金属ベース基板の各種実
施例について、図１〜図５を用いて説明する。まず、金
属ベース基板の第１の実施例について、図１及び図２を
用いて説明する。なお、図２は本実施例の金属ベース基
板の上面図であり、図１は図２のＩ−Ｉ線断面図であ
る。EXAMPLES Various examples of the metal base substrate according to the present invention will be described below with reference to FIGS. First, a first embodiment of the metal base substrate will be described with reference to FIGS. 2 is a top view of the metal base substrate of this embodiment, and FIG. 1 is a sectional view taken along the line I--I of FIG.
【００１０】本実施例の金属ベ−ス基板は、図１に示す
ように、ベ−ス金属１１の上に絶縁層１２を介して１次
回路パタ−ン１３が形成されている１次側金属ベ−ス体
１０と、ベ−ス金属２１の上に絶縁層２２を介して２次
回路パタ−ン２３が形成されている２次側金属ベ−ス体
２０とを、絶縁物質３０を介して接続したものである。
１次回路パタ−ン１３と２次回路パタ−ン２３とは、ト
ランス１を介して電気的に接続されている。２次側のベ
−ス金属２１は、接地されている。両金属ベース体１
０，２０の接合面は、図２に示すように、凹凸形状を成
し、絶縁物質３０は、この凹凸形状に対応して、ジグザ
グ形状に形成されている。As shown in FIG. 1, the metal-based substrate of this embodiment has a primary side on which a primary circuit pattern 13 is formed on a base metal 11 via an insulating layer 12. The metal base body 10 and the secondary side metal base body 20 in which the secondary circuit pattern 23 is formed on the base metal 21 with the insulating layer 22 interposed therebetween are provided with the insulating material 30. It is connected through.
The primary circuit pattern 13 and the secondary circuit pattern 23 are electrically connected via the transformer 1. The base metal 21 on the secondary side is grounded. Both metal base 1
As shown in FIG. 2, the bonding surfaces of 0 and 20 have an uneven shape, and the insulating material 30 is formed in a zigzag shape corresponding to the uneven shape.
【００１１】以上のように、本実施例では、１次側金属
ベース１１と２次側金属ベース２１とは電気的に接続さ
れていないので、１次側金属ベース１１までも接地する
必要がなくなる。このため、ＡＣ１００Ｖ又はＡＣ２０
０Ｖ等の高電圧が入力される１次回路パターン１３と非
接地の１次側金属ベース１１との間の電位差は、１次側
金属ベースが接地されている場合よりも遥かに小さくな
り、実質的に絶縁層１２の絶縁特性や絶縁耐圧特性等を
考慮する必要がなくなる。一方、２次回路側は、金属ベ
ース２１が接地されているものの、２次回路パターン２
３にかかる電圧はあまり高くないので、２次側絶縁層２
２に課せられる絶縁特性等の条件はあまり厳しいものに
なることはない。As described above, in this embodiment, since the primary side metal base 11 and the secondary side metal base 21 are not electrically connected, it is not necessary to ground even the primary side metal base 11. . Therefore, AC100V or AC20
The potential difference between the primary circuit pattern 13 to which a high voltage such as 0 V is input and the non-grounded primary-side metal base 11 becomes much smaller than that when the primary-side metal base is grounded. Therefore, it is not necessary to consider the insulation characteristics and the dielectric strength characteristics of the insulating layer 12. On the other hand, on the secondary circuit side, although the metal base 21 is grounded, the secondary circuit pattern 2
Since the voltage applied to 3 is not so high, the secondary insulating layer 2
Conditions such as insulation characteristics imposed on No. 2 are not so severe.
【００１２】したがって、絶縁層１２，２２を厚くしな
くても、トランス１等のパワー部品に対して必要な絶縁
特性や絶縁耐圧性を得ることができる。しかも、絶縁層
１２，２２は、比較的薄くても十分なので放熱特性を低
下させることもない。また、比較的高電圧が入力するパ
ワー部品を搭載する場合に、放熱特性と絶縁特性の両面
を考慮して、従来の金属ベース基板を用いるとすると、
１次側回路用と２次側回路用とに、それぞれ別体の金属
ベース基板が必要になるが、本実施例では、一の金属ベ
ース基板上にパワー部品を搭載することができるので、
実装密度を高めることもできる。Therefore, even if the insulating layers 12 and 22 are not thickened, it is possible to obtain the necessary insulation characteristics and withstand voltage characteristics for power components such as the transformer 1. Moreover, since the insulating layers 12 and 22 are sufficiently thin, they do not deteriorate the heat dissipation characteristics. Also, when mounting a power component to which a relatively high voltage is input, and considering both the heat dissipation characteristics and the insulation characteristics, using a conventional metal base substrate,
Although separate metal base boards are required for the primary circuit and the secondary circuit, in this embodiment, since the power components can be mounted on one metal base board,
The packaging density can also be increased.
【００１３】なお、本実施例では、両金属ベース体１
０，２０の接合面を凹凸形状にして、接合面積を増加さ
せることにより、両金属ベース体１０，２０間の接合強
度を高めるいるが、両金属ベース体１０，２０の接合強
度が十分に確保できるならば、両金属ベース体１０，２
０の接合面を平坦にしてもよい。In this embodiment, both metal base bodies 1 are used.
The joint surface between the metal base bodies 10 and 20 is increased by increasing the joint area by making the joint surface of the metal base bodies 0 and 20 uneven to secure a sufficient joint strength between the metal base bodies 10 and 20. If possible, both metal bases 10, 2
The 0 bonding surface may be flat.
【００１４】次に、本発明に係る金属ベ−ス基板の第２
の実施例について、図３を用いて説明する。本実施例の
金属ベ−ス基板は、１次回路側の絶縁層１２ａを厚くす
ると共に、１次回路側のベ−ス金属１１ａを薄くし、２
次回路側の絶縁層２２ａを薄くすると共に２次回路側の
ベース金属２１ａを厚くしたもので、その他の構造は、
第１の実施例と同一である。Next, the second metal-based substrate according to the present invention is used.
The embodiment will be described with reference to FIG. In the metal base substrate of this embodiment, the insulating layer 12a on the primary circuit side is thickened, and the base metal 11a on the primary circuit side is thinned, and
The insulating layer 22a on the secondary circuit side is thinned and the base metal 21a on the secondary circuit side is thickened.
This is the same as the first embodiment.
【００１５】第１の実施例において説明したように、一
般的に、１次回路側金属ベース体１０ａと二次回路側金
属ベース体２０ａとの間に絶縁物質３０を設け、絶縁層
１２ａの絶縁特性や絶縁耐圧特性等を考慮する必要性が
小さくなくなるといっても、搭載部品１や１次側回路パ
ターン１３によっては、絶縁層１２ａの絶縁性能を向上
させたほうが好ましい場合もある。そこで、本実施例で
は、１次回路側金属ベース体１０ａを絶縁特性および絶
縁耐圧特性を重視した構造とし、かかる電圧が比較的低
いものの発熱量の大きい２次側金属ベース体２０ａを放
熱特性を重視した構造とした。すなわち、本発明のよう
に、両金属ベース体１０ａ，２０ａとの間に絶縁物質３
０を介在させることにより、１次回路側に要求される条
件（例えば、絶縁性性能）と２次回路側に要求される条
件（放熱性能）とが異なる場合でも、これらの要求に答
えうる金属ベース基板を得ることができる。As described in the first embodiment, in general, the insulating material 30 is provided between the primary circuit side metal base body 10a and the secondary circuit side metal base body 20a to improve the insulation characteristics of the insulating layer 12a. Although it is not necessary to consider the withstand voltage characteristic and the like, it may be preferable to improve the insulating performance of the insulating layer 12a depending on the mounted component 1 and the primary side circuit pattern 13. In view of this, in this embodiment, the primary circuit side metal base body 10a has a structure in which insulation characteristics and dielectric strength characteristics are emphasized, and the secondary side metal base body 20a, which has a relatively low voltage but generates a large amount of heat, emphasizes heat dissipation characteristics. It has a structure. That is, as in the present invention, the insulating material 3 is provided between the metal base bodies 10a and 20a.
Even if the condition required for the primary circuit side (for example, insulation performance) and the condition required for the secondary circuit side (heat dissipation performance) are different by interposing 0, a metal base substrate that can meet these requirements. Can be obtained.
【００１６】次に、金属ベース基板の第３の実施例につ
いて、図４及び図５を用いて説明する。なお、図５は本
実施例の金属ベース基板の上面図であり、図４は図２の
ＩＶ−ＩＶ線断面図である。本実施例の金属ベ−ス基板
は、金属ベース体１０，２０をベース金属１１，２１と
絶縁層１２，２２と回路パタ−ン１３，２３とで構成
し、両金属ベース体１０，２０を相互間に所定幅の空間
３１が介在するようにして絶縁性接続具３５を用いて接
続したものである。すなわち、以上の実施例が絶縁物質
３０として実体ある絶縁体を用いたのに対して、本実施
例は、絶縁物質として空気を用いるようにしたものであ
る。Next, a third embodiment of the metal base substrate will be described with reference to FIGS. 5 is a top view of the metal base substrate of this embodiment, and FIG. 4 is a sectional view taken along line IV-IV of FIG. In the metal base substrate of this embodiment, the metal base bodies 10 and 20 are composed of base metals 11 and 21, insulating layers 12 and 22, and circuit patterns 13 and 23, and both metal base bodies 10 and 20 are formed. They are connected using an insulating connector 35 so that a space 31 having a predetermined width is interposed between them. That is, in contrast to the above-described embodiment in which the actual insulator is used as the insulating material 30, in the present embodiment, air is used as the insulating material.
【００１７】本実施例によれば、両金属ベース体１０，
２０の間に絶縁物質である空気が介在することになるの
で、基本的には第１の実施例及び第２の実施例と同様の
効果を得ることができる。さらに、本実施例では、金属
ベース体１０と金属ベース体２０とは、本質的には別体
で、それぞれを別工程で製造することができるので、容
易に製造することができる。また、１次側の金属ベース
体１０と２次側のベース金属体２０とのうち、一方を容
易に交換することができるので、汎用性の高い金属ベー
ス基板を提供することができる。According to this embodiment, both metal base bodies 10,
Since air, which is an insulating material, intervenes between 20, basically the same effects as those of the first and second embodiments can be obtained. Furthermore, in the present embodiment, the metal base body 10 and the metal base body 20 are essentially separate bodies, and can be manufactured in separate steps, so that they can be easily manufactured. In addition, one of the primary-side metal base body 10 and the secondary-side base metal body 20 can be easily replaced, so that a highly versatile metal base substrate can be provided.
【００１８】なお、以上の実施例では、相互間に電位差
のある２種類の回路パターンが形成されるものについて
説明したが、本発明は、これに限定されるものではな
く、相互間に電位差のある３種類以上の回路パターンが
形成されるものに本発明を適用してもよい。この場合、
各回路パターンごとに金属ベース体を形成し、全ての金
属ベース体間に絶縁物質を介在させるようにしてもよい
し、必要な金属ベース体間にのみ絶縁物質を介在させる
ようにしてもよい。In the above embodiments, two types of circuit patterns having a potential difference between each other are formed, but the present invention is not limited to this, and the potential difference between the two is different. The present invention may be applied to the case where three or more kinds of circuit patterns are formed. in this case,
A metal base body may be formed for each circuit pattern and an insulating material may be interposed between all the metal base bodies, or an insulating material may be interposed only between required metal base bodies.
【００１９】[0019]
【発明の効果】本発明によれば、各回路パターンごと
に、金属ベース体が形成され、しかも各金属ベース体相
互間には絶縁物質が介在しているので、回路パターンご
とに要求される条件、例えば、放熱性能や絶縁性能等に
応じて、各金属ベース体の絶縁層の厚さを変えることに
より、全ての条件を満足させることができる。したがっ
て、放熱特性を低下させることなく、十分な絶縁性能を
確保してショート等の事故を防止することも可能であ
る。According to the present invention, since the metal base body is formed for each circuit pattern and the insulating material is interposed between the metal base bodies, the conditions required for each circuit pattern are satisfied. For example, all the conditions can be satisfied by changing the thickness of the insulating layer of each metal base body according to the heat dissipation performance, the insulation performance, and the like. Therefore, it is also possible to secure sufficient insulation performance and prevent accidents such as a short circuit without degrading the heat dissipation characteristics.
【図１】本発明に係る第１の実施例の金属ベース基板の
断面図である。FIG. 1 is a sectional view of a metal base substrate according to a first embodiment of the present invention.
【図２】本発明に係る第１の実施例の金属ベース基板の
上面図である。FIG. 2 is a top view of the metal base substrate according to the first embodiment of the present invention.
【図３】本発明に係る第２の実施例の金属ベース基板の
断面図である。FIG. 3 is a sectional view of a metal base substrate of a second embodiment according to the present invention.
【図４】本発明に係る第３の実施例の金属ベース基板の
断面図である。FIG. 4 is a sectional view of a metal base substrate of a third embodiment according to the present invention.
【図５】本発明に係る第３の実施例の金属ベース基板の
上面図である。FIG. 5 is a top view of a metal base substrate according to a third embodiment of the present invention.
【図６】従来の金属ベース基板の断面図である。FIG. 6 is a cross-sectional view of a conventional metal base substrate.
１…トランス、１０，１０ａ…金属ベース体、１１，１
１ａ…１次側金属ベース、１２，１２ａ…１次側絶縁
層、１３…１次回路パターン、２０，２０ａ…金属ベー
ス体、２１，２１ａ…２次側金属ベース、２２，２２ａ
…２次側絶縁層、２３…２次回路パターン、３０…絶縁
物質、３１…空間、３５…絶縁性接続具。1 ... Transformer, 10, 10a ... Metal base body, 11, 1
1a ... Primary side metal base, 12, 12a ... Primary side insulating layer, 13 ... Primary circuit pattern, 20, 20a ... Metal base body, 21, 21a ... Secondary side metal base, 22, 22a
... secondary side insulating layer, 23 ... secondary circuit pattern, 30 ... insulating material, 31 ... space, 35 ... insulating connector.
Claims (4)
の回路パターンが形成されている金属ベース基板におい
て、 前記回路パターンごとに、金属板上に絶縁層を介して該
回路パターンが形成された金属ベース体を備え、 ２以上の前記金属ベース体は、相互間に絶縁物質が介在
して接続されていることを特徴とする金属ベース基板。1. A metal base substrate in which two or more types of circuit patterns are formed on a metal plate via an insulating layer, wherein each circuit pattern has the circuit pattern on the metal plate via an insulating layer. A metal base substrate, comprising: a metal base body formed with a plurality of metal base bodies, wherein the two or more metal base bodies are connected to each other with an insulating material interposed therebetween.
の１次回路パターン及び２次回路パターンが形成されて
いる金属ベース基板において、 前記１次回路パターン及び前記２次回路パターンごと
に、金属板上に絶縁層を介して、それぞれの回路パター
ンが形成された金属ベース体を備え、 前記１次回路パターンが形成されている前記金属ベース
体と前記二次回路パターンが形成されている前記金属ベ
ース体とは、相互間に絶縁物質が介在して接続されてい
ることを特徴とする金属ベース基板。2. A metal base substrate in which a primary circuit pattern and a secondary circuit pattern for a power supply component are formed on a metal plate via an insulating layer, wherein the primary circuit pattern and the secondary circuit pattern are provided. A metal base body on which a respective circuit pattern is formed on a metal plate via an insulating layer, and the metal base body on which the primary circuit pattern is formed and the secondary circuit pattern are formed. A metal base substrate, wherein the metal base body is connected to the metal base body with an insulating material interposed therebetween.
記金属ベース体の絶縁層の厚さは、前記二次回路パター
ンが形成されている前記金属ベース体の絶縁層の厚さよ
りも、厚いことを特徴とする請求項２記載の金属ベース
基板。3. The insulating layer of the metal base body on which the primary circuit pattern is formed is thicker than the insulating layer of the metal base body on which the secondary circuit pattern is formed. The metal base substrate according to claim 2, wherein:
の空間が介在するよう、絶縁性を有する接続具で接続さ
れ、 前記絶縁物質は、前記空間内に有する絶縁性の気体であ
ることを特徴とする請求１、２又は３記載の金属ベース
基板。4. The metal base bodies are connected to each other by a connector having an insulating property such that spaces having a predetermined width are interposed therebetween, and the insulating material is an insulating gas contained in the space. The metal base substrate according to claim 1, 2, or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22424392A JPH0677614A (en) | 1992-08-24 | 1992-08-24 | Metallic base board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22424392A JPH0677614A (en) | 1992-08-24 | 1992-08-24 | Metallic base board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0677614A true JPH0677614A (en) | 1994-03-18 |
Family
ID=16810738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22424392A Pending JPH0677614A (en) | 1992-08-24 | 1992-08-24 | Metallic base board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0677614A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3018304U (en) * | 1995-05-18 | 1995-11-21 | ブリヂストンスポーツ株式会社 | Golf club |
| WO2013018330A1 (en) * | 2011-07-29 | 2013-02-07 | 三洋電機株式会社 | Substrate for mounting elements, and semiconductor power module |
| US8863963B2 (en) | 2005-09-12 | 2014-10-21 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US8967394B2 (en) | 2005-09-12 | 2015-03-03 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US8978903B2 (en) | 2005-09-12 | 2015-03-17 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US9259102B2 (en) | 2005-09-12 | 2016-02-16 | RTC Industries, Incorporated | Product management display system with trackless pusher mechanism |
| US9895007B2 (en) | 2005-09-12 | 2018-02-20 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US10154739B2 (en) | 2013-12-02 | 2018-12-18 | Retail Space Solutions Llc | Universal merchandiser and methods relating to same |
| WO2019064997A1 (en) * | 2017-09-29 | 2019-04-04 | 株式会社Ihi | Circuit board, structure for connecting conductive members, and electrically-operated compressor |
-
1992
- 1992-08-24 JP JP22424392A patent/JPH0677614A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3018304U (en) * | 1995-05-18 | 1995-11-21 | ブリヂストンスポーツ株式会社 | Golf club |
| US8863963B2 (en) | 2005-09-12 | 2014-10-21 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US8967394B2 (en) | 2005-09-12 | 2015-03-03 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US8978903B2 (en) | 2005-09-12 | 2015-03-17 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| US9259102B2 (en) | 2005-09-12 | 2016-02-16 | RTC Industries, Incorporated | Product management display system with trackless pusher mechanism |
| US9895007B2 (en) | 2005-09-12 | 2018-02-20 | Rtc Industries, Inc. | Product management display system with trackless pusher mechanism |
| WO2013018330A1 (en) * | 2011-07-29 | 2013-02-07 | 三洋電機株式会社 | Substrate for mounting elements, and semiconductor power module |
| US20140085834A1 (en) * | 2011-07-29 | 2014-03-27 | Sanyo Electric Co., Ltd. | Device mounting board and semiconductor power module |
| US9439285B2 (en) | 2011-07-29 | 2016-09-06 | Panasonic Intellectual Property Management Co., Ltd. | Device mounting board and semiconductor power module |
| US10154739B2 (en) | 2013-12-02 | 2018-12-18 | Retail Space Solutions Llc | Universal merchandiser and methods relating to same |
| WO2019064997A1 (en) * | 2017-09-29 | 2019-04-04 | 株式会社Ihi | Circuit board, structure for connecting conductive members, and electrically-operated compressor |
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