JPH0677455A - Photoelectric conversion device, signal processing system and photoelectric conversion method - Google Patents

Abstract

PURPOSE:To make the number of emitter electrodes a half of the number of a conventional constitution, reduce the parasitic capacitance of a signal line and increase and effective aperture area. CONSTITUTION:A bipolar transistor Q1, carrier storage regions PD1 and PD3 which are adjacent to each other with the bipolar transistor Q1 therebetween and insulated gate type transistors MT1 and MT2 in which the carrier storage regions PD1 and PD3 and the base region of the bipolar transistor Q1 are used as the source and drain regions are provided in a photoelectric conversion cell of which one picture element is composed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device, a signal processing system and a photoelectric conversion method, and more particularly to an amplification type photoelectric conversion element capable of amplifying and outputting a photoelectrically converted signal in a transistor constituting section. The present invention relates to a photoelectric conversion device, a signal processing system, and a photoelectric conversion method using the.

[0002]

2. Description of the Related Art In recent years, as photoelectric conversion elements have become finer and finer, the output of photoelectric conversion signals has decreased. Therefore, an amplification type photoelectric conversion element capable of amplifying and outputting a photoelectrically converted signal. Is attracting attention. Such an amplification type photoelectric conversion element has a structure similar to that of a unipolar transistor or a bipolar transistor, and accumulates electric charges generated by light irradiation in a base or gate region serving as a control electrode region and There is a photoelectric conversion element that outputs an amplified signal from an emitter or source region which is a region.

Of these, FIG. 27 is a plan view of a pixel using a conventional bipolar sensor. In the figure, 21
Is an emitter region, 22 is an output line formed of AL or the like,
23 is a contact hole for connecting the emitter region 21 and the output line 22, 24 is a base region for accumulating photocharges, 25 is a drive line formed of polySi or the like for performing a sensor operation of a pixel, 26 is a capacitance C _ox formed between the base region 24 and the drive line 25,
Is a gate electrode of a P-type MOS transistor formed by using the base region 24 of the adjacent pixel as the source and drain regions, and is composed of a part of the drive line 25. 28 is a thick oxide film for separating pixels from each other.

FIG. 28 is a sectional view taken along the line XX 'in FIG. 27, and FIG. 29 is a sectional view taken along the line YY' in FIG. 28 and 29, 29 is a thin oxide film,
Reference numeral 30 is a high impurity concentration n ⁺ layer provided for separating pixel signals in the YY ′ direction, 31 is a low impurity concentration n ⁻ layer in which a depletion layer expands, 32 is a collector region, and 33 is a wiring 2
An interlayer insulating film for separating 2, 25.

As shown in FIG. 28, the reset P-type MOS transistor M (indicated by the broken line in the figure) is formed in the horizontal separation region of each pixel. When the gate of the P-type MOS transistor M is turned on, the base regions 24 of adjacent pixels are made conductive and resetting is performed. On the contrary, when the gate is OFF, the P-type MOS transistor M plays a role as a pixel isolation region.

Further, FIG. 30 is an equivalent circuit diagram of a two-dimensional photoelectric conversion device in which the above pixels are arranged two-dimensionally.

In FIG. 30, reference numeral 41 denotes a pixel composed of a bipolar sensor (equivalently, a bipolar transistor) T, a capacitance C _OX connected to the base, and a P-type MOS transistor M, and 42 a vertical output line connected to the emitter of the pixel 41. ,
43 is a MOS transistor for resetting the vertical output line 42, 44 is a storage capacitor for storing the output signal from the pixel 41, 45 is a MOS transistor for transferring the output signal to the storage capacitor 44, and 46 is a horizontal shift A MOS transistor for receiving the output of the register and transferring the output signal to the horizontal output line 47, a MOS transistor 48 for resetting the horizontal output line 27, a preamplifier 49, a horizontal drive line 50, and a vertical shift register 51. Is a buffer MOS transistor for receiving the sensor drive pulse, 52 is an emitter follower circuit that sets the source potential of the P-type MOS transistor to perform the clamp operation of the pixel 41, and 53 is an emitter follower circuit 52.
P-type MOS transistor for setting the base potential of the MOS transistor, 54 is a terminal for applying a pulse to the gate of the MOS transistor 43, 55 is a terminal for applying a pulse to the gate of the transfer MOS transistor 45, and 56 is A terminal for applying a sensor drive pulse, 57 is a P-type M
A terminal for applying a pulse to the gate of the OS transistor 53, and 58 is an output terminal connected to the preamplifier 49.

The two-dimensional solid-state image pickup device shown in FIG. 30 is of a type in which all pixels are reset at once, and can be used for still video and the like.

The operation will be described below.

First, a low-level pulse is applied to the terminal 57 of FIG. 30 to turn on the P-type MOS transistor 53, and the output of the emitter follower circuit 52 is brought to a positive potential. The output of the emitter follower circuit 52 is connected to the source of the P-type MOS transistor M of the pixel 41. If the source potential becomes higher than the gate potential enough to turn on the P-type MOS transistor M, P Type MOS
Through the transistor M, the pixel bipolar sensor T
Holes are injected into the base of.

Next, a high-level pulse is applied to the terminal 57 to turn off the P-type MOS transistor 53, and the output of the emitter follower circuit 52 is set to GND.

Next, a high-level pulse is applied to the terminal 54 of FIG. 30 to turn on the transistor 43 and set the vertical output line 42 to GND (this is called the first reset).

Next, in this state, the vertical shift register is driven, and a pixel reset pulse is applied to the terminal 56, whereby the pixels are sequentially reset for each row, and the bipolar type sensor T of all the pixels. The base of is set to a constant potential and in a reverse bias state (up to this point is called the second reset).

Next, after performing the accumulation operation of the optical carrier,
A low level pulse is applied to the terminal 54 in FIG.
The OS transistor 43 is turned off, a read pulse is applied from the terminal 56 for each row selected by the output of the vertical shift register, and the signal output is stored in the storage capacitor 44 through the MOS transistor 45. Storage capacity 4
The signal output accumulated in 4 is transferred to the horizontal output line 47 through the transfer MOS transistor 46 selected by the horizontal shift register, and is output from the output terminal 58 through the preamplifier 49.

[0015]

First, the first problem of the above conventional photoelectric conversion element will be described.

The above photoelectric conversion element has been put into practical use as a sensor element for cameras and fax machines by utilizing its excellent photoelectric conversion characteristics. However, with the miniaturization of the sensor element, (1) the number of photo-generated carriers decreases with the decrease of the light receiving area. (2) The capacitance division ratio decreases with the increase of the parasitic capacitance component. Occurs, resulting in a decrease in signal component and a decrease in S / N ratio.

Therefore, in order to proceed with further miniaturization, it is necessary to maintain the signal component as large as possible.
The sensitivity of the photoelectric conversion element and the parasitic capacitance have a relationship given by the following equation.

[0018]

[Equation 1] S: Sensitivity Ip: Photocurrent generating density Ae: opening area ts: accumulation time C _OX: the overlap capacitance of the MIS gate electrode and the control electrode C _bc: junction capacitance h _FE of the base-collector: current amplification factor of the Tr C _T: Temporary charge storage capacity C _vl : Parasitic capacitance due to vertical line As is clear from equation (1), if the aperture area, photocurrent generation density, storage time, and h _FE are constant, in order to maximize sensitivity, C _bc + C _OX is as small as possible, and in the latter stage, the value of C _vl + C _T is as small as possible, C _bc
It can be seen that it is desirable to make + C _OX as large as possible, contrary to the previous stage. When the pixel size is relatively large, the degree of freedom in layout is high, and each capacitance value can be easily controlled, so that the sensitivity can be made sufficiently high. However, as the pixel size becomes smaller with the progress of miniaturization, the degree of freedom in layout becomes smaller due to process restrictions such as alignment accuracy, increase in junction capacitance component, and reduction in aperture ratio. The value of the device operation on the C _T is the restriction at the time of reading Finally, C _OX is present upper limit from the viewpoint of maintaining the aperture ratio in the present lower limit value respectively, from the point of determining the saturation voltage and C _OX is doing. Further, there is a contradictory request that C _bc is small in order to make the base potential at the time of reading as high as possible and is large in order to minimize the potential decrease due to the capacity division by the read operation. Therefore, in order to maximize the sensitivity, it is desirable to determine the values of C _OX and C _T from the operational requirements, set the optimum value of C _bc , and minimize C _vl. Since C _be , which is the main factor that determines C _vl, is determined by the emitter size, it can be hardly reduced, and as a result, the sensitivity tends to decrease as the pixel size decreases.

Next, the second problem of the conventional photoelectric conversion element will be described. Further, in the two-dimensional photoelectric conversion device shown in FIG. 30, the first reset is performed at the same time as already described, but the base of the bipolar sensor T of the subsequent pixel is set to a constant potential and reverse bias state. Since the second reset operation is sequentially performed for each pixel in each row, the start of the accumulation operation differs depending on the pixels in each row. Further, although the storage operation ends immediately before the start of the read operation, the read operation is sequentially performed for each pixel in each row, and thus the end of the storage operation also differs depending on the pixels in each row.

Therefore, when the high-speed moving image is picked up, the output pixel may be distorted when the start and end of the accumulation time is generated for each row. This tendency was particularly remarkable when a moving image was read as a still image.

[0021]

The present invention has a control electrode region made of a semiconductor of one conductivity type and first and second main electrode regions made of a semiconductor of a conductivity type opposite to the one conductivity type. ,
A first transistor that outputs a signal from the first main electrode region based on the carriers transferred to the control electrode region and a light transistor that is provided adjacent to the first transistor and receives light energy. A carrier accumulation region made of the semiconductor of one conductivity type for accumulating carriers, and a carrier accumulation region and a control electrode region of the transistor serving as source / drain regions. A photoelectric conversion cell having the second transistor for transferring the accumulated carriers to the control electrode region of the transistor is provided as one pixel.

The present invention is also a signal processing system having the above photoelectric conversion device.

The present invention also relates to a photoelectric conversion method of the above photoelectric conversion device, which comprises a control electrode region made of a semiconductor of one conductivity type, and first and second electrodes made of a semiconductor of a conductivity type opposite to the one conductivity type. A main electrode region of the first transistor, the first transistor outputting a signal from the first main electrode region based on the carriers transferred to the control electrode region, and the first transistor provided adjacent to the first transistor. In addition, a carrier accumulation region formed of the semiconductor of one conductivity type for accumulating carriers generated by receiving light energy, and a second region having the carrier accumulation region and the control electrode region of the transistor as source / drain regions. A transistor,
A photoelectric conversion method of a photoelectric conversion device, wherein a photoelectric conversion cell having a second transistor for transferring carriers accumulated in a carrier accumulation region to a control electrode region of the transistor constitutes one pixel, A reset operation of turning on the second transistor to set the carrier storage region and the control electrode region to an initial potential; a storage operation of storing carriers generated by light irradiation in the carrier storage region; The transistor is turned on to transfer the carriers stored in the carrier storage region to the control electrode region, and the read operation for reading the potential of the control electrode region determined by the transferred carrier. It is characterized by having.

In the above photoelectric conversion device of the present invention,
In particular, as a configuration for solving the above second problem, an optical signal storage unit (carrier storage region) for storing carriers generated by receiving optical energy and a carrier transferred from the optical signal storage unit are held. Optical signal holding means, and first switching means (second transistor) for controlling conduction between the optical signal storage means and the optical signal holding means.
And a second connecting the optical signal storage means to a predetermined voltage source
A plurality of photoelectric conversion cells each having a switch means (third transistor), and a first control means for collectively operating all the photoelectric conversion cells, and a second switch means. And a second control means for collectively operating all photoelectric conversion cells, wherein the first control means transfers the carrier from the optical signal storage means to the optical signal holding means. And
The second control means is preferably a means for resetting the optical signal storage means to a predetermined potential.

[0025]

[Operation] The present invention is intended to contribute to further miniaturization of the photoelectric conversion device as shown in FIGS. 27 to 30, and a conventional transistor is provided for each pixel to generate light in the control electrode region. In the present invention, a carrier is accumulated and a signal is read out from one of the main electrode regions in contact with the control electrode region. Separately from the above, the carriers accumulated in the carrier accumulation region are transferred to the control electrode region. Here, if the carrier storage regions are arranged in line symmetry with respect to the control electrode region, the number of main electrodes that output signals is half that of the conventional one, that is, one main electrode can be shared by two pixels. Yes, C
The value of _vl can be set to about 50 to 70% as compared with the conventional value. Further, the effective opening area is increased by about 20 to 30% by displacing the main electrode region for outputting a signal, which was conventionally present in the central portion of one pixel, to the separation portion of the pixel. Sensitivity can be increased by accumulating these effects.

According to the present invention, a plurality of carrier storage regions and the control electrode region are set to an initial potential in the first reset operation, and carriers generated by light irradiation are stored in the carrier storage region in the next storage operation. Then, in the next transfer operation, one of the insulated gate transistors is turned on to transfer the carriers stored in one of the carrier storage areas to the control electrode area, and the carriers transferred in the next read operation. Read out the potential of the control electrode region that is uniquely determined by, and initialize the potential of the control electrode region by a second reset operation after reading.
With respect to other carrier storage areas, the operations of transfer, read, and reset are performed by the operations of.

In the present invention, at least an optical signal storage means for storing carriers, an optical signal holding means for holding carriers from the optical signal storage means, and a portion between the optical signal storage means and the optical signal holding means. A photoelectric conversion cell is constituted by a first switch means for controlling conduction of the optical signal storage means and a second switch means for connecting the optical signal storage means to a predetermined voltage source, and the optical signal storage means is constituted by the first control means. To the optical signal holding means from all the photoelectric conversion cells in a batch to end the storage operation, and the optical signal storage means to all the photoelectric conversion cells in a batch to reset to a predetermined potential and then start the storage operation. By doing so, the start and end of the accumulation operation can be made to coincide with all pixels. The reset of the optical signal holding means may be performed simultaneously with the reset of the optical signal storage means, or may be performed individually.

The embodiments of the present invention will be described below. FIG. 24 is a schematic view showing an embodiment of the present invention,
(A) shows an upper surface of the photoelectric conversion device, (b) shows a cross section taken along line XX ', and (c) shows an equivalent circuit. The light receiving portion is composed of a photodiode PD composed of a p region 12 and an n ⁻ region 3, and the first transistor is a collector of the n ⁺ region 2 and the n ⁻ region 3, a base of the p region 9 and an n region 1 of the first transistor.
It is composed of a bipolar transistor Q having 0 as an emitter.

The photodiode PD and the bipolar transistor Q are connected to the pM as the second transistor.
The two p regions 9 and 12 are selectively made conductive via the OS transistor MT. Where C _P is the storage capacity and C _BC
Is a base-collector capacitance, and V _CC is a reference voltage source that provides a potential for reverse biasing the collector and the cathode of the photodiode.

Next, the basic operation will be described. When light enters the photodiode while the transistor MT is off, holes are accumulated in the p region 12. Then, the transistor MT is turned on to transfer the photocharge to the p region 9 serving as the base. After the transistor MT is turned off again, a signal amplified based on the carriers accumulated in the base is taken out from the emitter.

A bipolar transistor or a unipolar transistor is used as the first transistor used in the present invention. In particular, the latter is preferably FET or SIT having a junction gate. As the second transistor used in the present invention, an insulated gate transistor is preferably used, and a MOS transistor is particularly desirable.

Further, it is preferable that the first transistor and a part of the second transistor are shielded from light.

If a plurality of photodiodes are provided for one first transistor, the sensitivity can be increased and the aperture ratio can be improved.

FIG. 25 shows a device (line sensor) in which three pixels are arranged in an array with the photoelectric conversion device of FIG. 24 as one pixel. In this pixel, a resetting transistor is further added as a third transistor in addition to the configuration of FIG.

The third transistor MR has p regions 12 and 2
0 as a source / drain and 11 as a gate electrode p
It is a MOS transistor, and the p region 20 is held at the reference potential for resetting.

Also in this case, as shown in FIG. 25B, it is preferable that the region other than the photodiode is shielded by the light shielding layer provided via the insulating layer 14.

In the example of FIG. 25, a negative voltage is applied to the gate electrode 11 before the accumulation operation in the example of FIG.
It is desirable to turn on the transistor MR to reset the photodiode.

FIG. 26 is for explaining the operation of the apparatus of FIG.
And (a) shows the circuit, and (b) shows the pulse timing.
Are shown respectively. First, as a reset operation,
Child φ _BRS , Φ_T Negative pulse on φ_TTA positive pulse is applied to
Then, the first reset is performed. At this time, each photodiode
The anode and the base of the bipolar transistor are reset
Reference potential V for_BBHeld in. Next, terminal φ_ERS Positive
Emitter of bipolar transistor with pulse applied
And capacity C_T Is the reference potential V for reset_EEReset to
Be done. Thus, the base
The carrier is reset by forward bias between the mitters.
It At this time, fixed pattern noise is suppressed like tt
For φ_T After the pulse of_ERS The pulse of
It is desirable to bring it down.

Thus, when the reset operation is completed, the next operation is the accumulation operation. At this time, the transistors MR, MT ₁ ...
MT ₃ , M ₁ ... M ₃ , MV ₁ ... MV ₃ , MH ₁ ...
MH ₃ is all off.

Next, in the read operation, the pulses of φ _T turn on the MOS transistors MT ₁ ... MT ₃ and carriers are simultaneously transferred to the bases of the bipolar transistors Q ₁ ... Q ₃ . The emitter of the pulse by transistor M ₁ ··· M ₃ is turned on next phi _TT is connected to the read capacitive load C _T, the signal is read out based on carriers stored in the base capacitive load C _T. After that, three signals time-series by the operation of the shift register are output through the amplifier Amp.

Needless to say, if pixels are arranged two-dimensionally, it becomes an area sensor.

[0042]

Embodiments of the present invention will be described in detail below with reference to the drawings. (Embodiment 1) FIG. 1 is a plan view of two pixels (two photoelectric conversion cells) of an embodiment of a photoelectric conversion device according to the present invention, FIG. 2 is a sectional view taken along the line AA 'in FIG. 1, and FIG. 1 is a sectional view taken along line BB ′ of FIG.
4 is a sectional view taken along the line CC ′ of FIG. 1, and FIG. 5 is a capacitive portion C ₁ of FIG.
FIG. 3 is a cross-sectional view of the and its vicinity. Further, FIG. 6 shows an equivalent circuit for four pixels. In FIG. 1, wirings, insulating layers, etc. are omitted for easy understanding.

As shown in FIG. 6, the photoelectric conversion device according to the present embodiment has two second transistors MT ₁ and MT ₃ (insulated gate type transistors, corresponding to the two carrier storage regions PD ₁ and PD ₃₎ . (Shown in FIGS. 1 and 2) are provided, carriers are stored in the carrier storage regions PD ₁ , PD _3, and the carriers stored through the MOS transistors MT ₁ , MT ₃ are sequentially stored in one bipolar transistor Q ₁ . It is sent to the base region (control electrode region) B ₃ . By controlling the potential of the base region B ₃ via the capacitance parts C ₁ and C ₃ , a signal based on the carriers transferred to the base region B ₃ is generated in the emitter region (first main electrode region) 1
0, and is output via the wiring 15. Carrier accumulation area P
The residual charges of D ₁ and PD ₃ are discharged by turning on the two third transistors MR ₁ and MR ₃ (insulated gate type transistors), respectively, and are set to a predetermined potential V _BG . When the MOS transistors MR ₁ and MR ₃ are in the OFF state, the carrier storage regions PD ₁ and PD ₃ are electrically insulated from each other.

1 to 5, 1 is an N-type semiconductor substrate, 2 is an N-type diffusion layer, 3 is an N-type epitaxial layer, 4 is a field oxide film as an element isolation region, 7 is a gate oxide film, 8a, 8b is a polycide film which will be the gate electrodes of the MOS transistors MT ₁ and MT ₃ , and 9 is a P-type region which will be the base region of the bipolar transistor Q ₁ and will also be the source region (or drain region) of the MOS transistors MT ₁ and MT _3. 10 is a bipolar transistor Q
_An N-type region 11 serving as an emitter region of _{1 is} an electrode serving as a gate electrode of the MOS transistors MR ₁ and MR ₃ and an electrode forming capacitors C ₁ and C ₃ as shown in FIG. Further, 12 is a carrier accumulation region PD ₁ , PD ₃
, A P-type region that constitutes the
Film), 14 is an interlayer insulating film (PSG film), and 15 is the first AL
A layer, 16 is a second AL layer, and 17 is a passivation film.

Hereinafter, a method of manufacturing the photoelectric conversion cell having the above structure will be described with reference to FIGS. 8 and 1
1, FIG. 14 is a view corresponding to the AA ′ cross section of FIG. 1, FIG.
12 and 15 are views corresponding to the BB 'section in FIG. 1, and FIGS. 10, 13 and 16 are views corresponding to the CC' section in FIG. Here, FIG. 8, FIG. 9, FIG. 11, FIG.
4 and FIG. 15, the size of the element region 19 is reduced for simplification.

The N type semiconductor substrate 1 has a specific resistance of 0.01Ω.
cm to 10 Ωcm is used. First, the N-type diffusion layer 2 is formed with As as an impurity by an ion implantation method and a thermal diffusion method to have a depth of 0.1 to 1 μm and a surface concentration of 1E17 to 1E2.
About 0 / cm ^{3 is} introduced. Next, using the epitaxial method, the growth layer concentration is 5E13 to 5E15 pieces / cm ³ , and the thickness is 3
An N-type epitaxial layer 3 having a thickness of about 15 μm is formed (FIG. 7).

Next, the element formation region 1 is formed by using the selective oxidation method.
9 and a field oxide film 4 which is an element isolation region are formed. At this time, the pad oxide film 5 has a thickness of 100 to 500Å, the nitride film formed by the low pressure CVD method has a thickness of 1000 to 3000Å, and the field oxide film 4 has a thickness of about 4000 to 10000Å (FIGS. 8 to 10).

When well diffusion is required to form the peripheral drive circuit with CMOS transistors, or when high concentration N is used.
Needless to say, these steps are completed before the selective oxidation method when a mold diffusion layer is required.

Next, the pad oxide film 5 is removed and the element forming region is exposed by etching, and then 1000 to 3000.
Oxidation of about Å is performed, the oxide film is removed again, and the gate oxide film 7 is formed again by dry oxidation of about 100 to 500Å. Subsequently, a low pressure CVD method is used to form a polysilicon film of 2000 to 4000 Å and 1000 to 2000
A W film of about Å is formed by a low pressure CVD method or a sputtering method, and these laminated films are polycide by heat treatment.

Then, the polycide films 8a and 8b are processed by photoetching by photoetching so that only the desired portions are left, and an oxide film is grown on the polycide by 100 to 1000Å by thermal oxidation. Next, the electrode 11 having both the horizontal pixel separation and the potential control function of the control electrode, and the polysilicon film serving as the gate electrode when the peripheral circuit is formed by the CMOS transistor are subjected to the low pressure CVD.
By the method, about 2000 to 4000 Å is formed. If polycide conversion is required, the W film is continuously depressurized by CV.
1000-2000Å by D method or sputtering method
After forming and polycide by heat treatment, a desired portion is left and removed by photoetching. At this stage, the p-type region 12 serving as a carrier storage region and the p-type region 9 serving as a base region are formed simultaneously by the ion implantation method and the thermal diffusion method and in a self-aligned manner by the field oxide film and the polycide film. The conditions used this time are 1E12 to 4E12 boron ions / cm ² ion implantation at 40 keV and 1 to 3 in an inert gas atmosphere at 1100 ° C.
Hrs heat treatment was performed. Subsequently, if an NMOS transistor exists in the emitter region 10 and the peripheral circuit, a source / drain region of the NMOS transistor is simultaneously formed by a photolithography process and an ion implantation method. In this embodiment, about 1E15 to 1E16 As ions / cm ² are implanted at 100 keV (FIGS. 11 to 1).
3).

Further, when a peripheral circuit is formed by a CMOS transistor, formation of a PMOS transistor and formation of a high concentration layer for ohmic contact on a P type diffusion layer are also carried out by the ion implantation method.

Next, the CVD film 13 for insulating between wirings
Are formed by normal pressure CVD method to 5000 to 9000Å. In this step, a BPSG film which is advantageous for the subsequent wiring forming step is generally used, and the BPSG film is also used here. Following this, a reflow process is performed to perform the planarization process and the activation of the ions implanted in the previous process. Further, contact holes are formed by photoetching, and sputtered 6000 to 1
AL-Si film formation and wiring pattern of about 0000Å
Are formed by photoetching. After the alloying process, the PSG film 14 formed by the atmospheric pressure CVD method
000Å (FIGS. 14 to 16).

The sulu holes are again formed by using the photo-etching method, and the second layer and the first layer of AL-Si are formed.
Connection of the second layer AL-Si16 to 8000 to 12000Å by using sputtering.
Film is formed, the unnecessary portion of the second-layer AL-Si is removed by photoetching, and then an alloy process is performed. Finally, the plasma nitride film 17, which is a passivation film, is formed to 6
About 000 to 12,000 Å is formed by the plasma CVD method, and the bonding pad is opened by photoetching to complete the process (FIGS. 2 to 4 and 17).

The operation of the above photoelectric conversion device will be described below with reference to the equivalent circuit of FIG. 6 and the timing chart of FIG.

First, a first reset operation for initializing all pixels is performed (T1). φ ₁ and φ ₂ are set to the high level, the base region B ₃ is forward biased with respect to the emitter region through the capacitors C ₁ and C ₃ , and the carriers are discharged, and then φ ₁ and φ ₂ are set to the low level. , Φ ₃ , φ
_{When 4 is set} to the low level, the MOS transistor of the photoelectric conversion cell is turned on, and the potentials of all the pixels become constant (V _BG ).

Next, the accumulation operation for accumulating the photo-generated carriers is performed (T2). At this time, the MOS transistors MR ₁ ,
MR ₃ , MT ₁ , MT ₃ (MR ₂ , MR ₄ , MT ₂ , M
T ₄ ) are all turned off, and holes generated by light are generated by the carrier accumulation regions PD ₁ , PD ₃ (PD ₂ , PD
₄ ) accumulated in. For the sake of simplicity, only the left two pixels in the figure will be described below, but the same operation is performed for the right two pixels.

Next, Φ3 is set to the low level, and the carriers generated in the carrier storage region PD ₁ are transferred to the base region B ₃ through the MOS transistor MT ₁ (T3). Next, the transferred carrier is read by the reading pulse Φ1 (T4). At this time, the MOS transistor MR ₁
Is of course off, the overlap capacitance C between the base region and the electrode is
_With only ₁ , the potential of the base region B ₃ is forward-biased with respect to the emitter region, and the transistor operation of the bipolar transistor Q ₁ occurs.

Then, Φ1 and Φ3 are set to the low level, and MO
The S transistors MR ₁ and MT ₁ are turned on, and the operation for resetting the carriers generated in the carrier storage region PD ₁ is performed (T5). As a result, the base region B ₃ is set to the initial potential again. Then transfer similarly carriers generated in the carrier storage region PD ₂ by t6 to t8, the read to complete a series of operations performed reset back to T1 again.

Although the capacitors C _{1 and} C ₃ for controlling the potential of the base region are provided in the embodiments described above, the present invention can be used even when such capacitors are not provided.

As described above, in this embodiment, the aperture ratio is improved and the sensitivity is increased by sequentially selectively connecting the photodiodes, which are a plurality of photoelectric conversion units, to one amplification bipolar transistor. You can (Embodiment 2) FIG. 19 shows a second embodiment of the photoelectric conversion device according to the present invention.
It is an equivalent circuit diagram which shows the structure of an Example.

In this embodiment, for simplification, a case will be described in which two pixels are arranged in the vertical direction and two pixels are arranged in the horizontal direction, that is, a total of four pixels.

As shown in the figure, each pixel S (indicated by the broken line in the figure) has reset switch transistors MR11 to MR22 as the second switch means and transfer transistors MT11 to MT22 as the first switch means. , the light charge storage capacitor becomes a light signal storing means of the signal read transistor Q11～Q22, and photodiode or the like C _P 11 ~C _P 22, signal holding capacitor C _B 11 ~C _B 22, the control capacitor C _OX 11~C _OX 22. Of these, the photocharge storage capacitance C _P 11
Light is emitted from the upper part to the parts C to _P 22, and the other parts are shielded so that light does not enter. The signal holding capacitor C _B 11 ~C _B 22, the control capacitor C _OX 11~C _OX 22 constitutes a light signal holding means, wherein the signal holding capacitor C _B 11 -C
_B 22 is a base capacitance of the signal reading transistors Q11 to Q22.

The operation of the photoelectric conversion device of the above embodiment will be described below with reference to the timing chart of FIG.

First, the pulse of φ _T1 is set to low level, and P
The MOS transistor MT11~MT22 the ON state, the light charge storage capacitors C _P 11 ~C _P 22 and the signal holding capacitor C _B 11 -C
_B 22 and same potential. The pulse of φ _T1 is PMOS
The common wiring given to the transistors MT11 to MT22 and the pulse generation means (not shown) of φ _T1 constitute the first control means.

Next, the φ _BR pulse is set to the low level while the φ _T1 pulse is set to the low level (at this time, V
_BB is set higher than this low level by more than the threshold voltage of the PMOS transistor), the PMOS transistor MT
11 to MT22 and MR11 to MR22 are turned on, and the photocharge storage capacitors C _P 11 to C _P 22 and the signal holding capacitor C of each pixel are
_B 11 -C _B 22 is reset to the initial potential (first reset). The pulse of φ _BR is applied to the PMOS transistor M.
The common wiring applied to R11 to MR22 and the pulse generation means (not shown) for φ _BR constitute the second control means.

Next, the pulse of φ _VC is set to the high level, and N
The MOS transistors MV1 and MV2 are turned on, and the emitter potential of each pixel is set to V _VC . In this state, MOS transistors MP1, MP1
2 is turned on and the horizontal drive lines VL1 and VL2 are set to Hi.
gh level (potential V _CC ) and horizontal drive lines VL1 and VL
By raising 2 to High level at the same time, the control capacitance C
_{OX 11~C OX} 22 via the signal reading transistor Q11~
The potential of the base region of Q22 is raised to forward bias between the base and the emitter to discharge the residual charge, and the reset operation is simultaneously performed for all pixels. After that, M by φ _RES
The OS transistors MN1 and MN2 are turned on, and the horizontal drive lines VL1 and VL2 are simultaneously set to the low level (GND).
Down to the photocharge storage capacitors C _P 11 to C _P 22 of each pixel,
The potentials of the signal holding capacitors C _B 11 to C _B 22 are set to a constant potential and reverse bias (second reset). The NOR circuit, the pulse φ _RES , the pulse generating means with a pulse number of 2 (not shown), the MOS transistors MN1 and MN2, and the MOS transistors MP1 and MP2 constitute the third control means.

After the completion of the second reset, when a high pulse is applied to φ _T1 to turn off the PMOS transistors MT11 to MT22, the photocarriers in the photodiode portion represented by the photocharge storage capacitors C _P 11 to C _P 22 are transferred. The storage operation of is started simultaneously for all pixels.

Next, after the accumulation operation is completed, the pulse of φ _T1 is set to the Low level for a certain period, so that the photoelectric charge storage capacitance C _P 11 to
The carrier of C _P 22 is transferred to the signal holding capacitors C _B 11 to C _B 22.

The transfer efficiency at this time is (M and n are 1 or 2).

After that, the pulse φ _R is selected by the NMOS transistor to which the output of the vertical shift register is applied, applied to the horizontal drive lines VL1 and VL2, and passed through the MOS transistors M 1 and M2 controlled by the pulse of φ _T2 . A signal is read out to the capacitors C _T1 and C _T2 .

The signals read to the capacitors C _T1 and C _T2 are transferred to the horizontal output line 100 through the transfer MOS transistors MH1 and MH2 selected by the horizontal shift register, and output from the output terminal 102 through the output amplifier 101. It In addition, the reset of the horizontal output line 100 is φ _HRS
This is done by setting the pulse of to High level.

As described above, in this embodiment, the accumulation operation is performed for all pixels at the same time, and the accumulation operations are completed at the same time.

In this embodiment, even if the number of pixels increases, the size of only the NMOS transistor to which the output of the vertical shift register is applied is increased to reduce R _ON (ON resistance value). Therefore, even if the pixel pitch in the vertical direction is narrowed or the number of pixels in the horizontal direction is increased, the area occupied by the third control means such as the NOR circuit described above is not increased. (Third Embodiment) In the second embodiment, the second reset is completed, the pulse of φ _T1 is raised, and the PMOS is turned on.
Immediately after turning off the transistors MT11 to MT22, the accumulation operation of all pixels was started. However, the PMOS transistors MT11 to MT22 are turned on during the accumulation operation, and the transfer operation is performed together with the accumulation operation (that is, the photocharge storage capacitance C _P 1
1 -C carriers generated in the _P 22, Soku, signal holding capacitor C
It is transferred to _B 11 to C _B 22. ), At the end of the storage (transfer) operation, there is no problem even if the pulse φ _T1 is applied so that the PMOS transistors MT11 to MT22 are turned off.
At this time, the transfer efficiency from the photocharge storage capacitors C _P 11 to C _P 22 to the signal holding capacitors C _B 11 to C _B 22 is 1. (Embodiment 4) In the second embodiment, a NOR circuit, a pulse φ _RES , a pulse generator (not shown) having a pulse number of 2, and an MO.
S transistors MN1 and MN2, MOS transistor M
Although P1 and MP2 constitute the third control means and the output signal of the vertical shift register is input to the NMOS transistor and the NOR circuit, the output of the vertical shift register is higher than the high level of φ _R by the Vth (Nth) of the NMOS transistor. If the level is not increased by the threshold level), the horizontal drive lines VL1, VL
No φ _R pulse is applied to 2.

Device miniaturization (MOS L reduction)
In the case of (1), it is desired to reduce the number of elements such as the third control means.

Therefore, in this embodiment, as shown in FIG. 21, the output signal of the vertical shift register and the pulse φ _RES are input to the OR circuit, and this OR circuit is input to the horizontal drive lines VL1 and VL1.
Connected to VL2. In such a configuration, at the time of the second reset, the pulse of φ _RES is set to the high level, the horizontal drive lines VL1 and VL2 are simultaneously raised to the high level, and φ _RES
Pulse of Low level, and horizontal drive lines VL1 and VL
Set 2 to LOW level.

At the time of reading, the read pulse V1 is output for each selected row by the output of the vertical shift register.
, V2 are applied to the horizontal drive lines VL1 and VL2. The drive pulse of this embodiment is as shown in FIG.

According to this embodiment, the third control means is OR
The circuit can be constituted only by a pulse generating means (not shown) for the pulse φ _RES , and the high level of all the pulses can be made the same. (Fifth Embodiment) In the fourth embodiment, for example, when the pixel on the upper right of FIG.
_When the potential of _P12 rises and exceeds a certain level, the PMOS
Holes may flow into the adjacent signal holding capacitors C _B11 or C _B12 through the transistor MR ₁₂ or MT ₁₂ to raise the potential. As a result, there may be a problem that the upper left pixel that is not irradiated with light outputs a false optical signal.

Therefore, in this embodiment, as shown in FIG. 23, the source terminals of the PMOS transistors MR _{11 to} MR ₂₂ are drawn out from each pixel by wiring, and the base
The high level of the reset pulse φ _BR is set to an appropriate value below V _CC . As a result, even if the upper right pixel is irradiated with strong light and the potential of the photocharge storage capacitor C _P12 rises, the carriers that have passed through the PMOS transistor MR ₁₂ will flow into the power supply V _BB, and between adjacent pixels. The false signal of can be prevented. The operation timing is exactly the same as in the fourth embodiment.

FIG. 31 is a block diagram showing the configuration of a signal processing system such as a communication system, a facsimile, a video recorder, etc., which uses the photoelectric conversion device of the present invention.

OR is an original carrying image information and the like,
Reference numeral 601 is an imaging lens, and 602 is the photoelectric conversion device of the present invention. The device 602 employs a single device for a simple communication system, a line sensor for a facsimile or the like, and an area sensor for a video recorder.

Reference numeral 603 is a control circuit including a central processing unit, which is connected to the device 602 via an input line 612, an output line 610 and a power supply line 611. 60
A recording control circuit 4 is connected to the recording head 605 and writes information on the recording medium 606. The recording head 605 is a magnetic head in the case of a video recorder, and a thermal head or an inkjet head in the case of a facsimile.

In the case of a communication system, the recording head 605 is replaced by a recording device placed in another place via a cable.

[0083]

As described above, according to the present invention,
It is possible to reduce the number of main electrodes that output signals to half the number of conventional electrodes without changing the conventional process. As a result, the value of the parasitic capacitance C _vl of the signal line is 50 compared to the conventional value.
It is possible to set the value to about 70%. In addition, the main electrode region, which conventionally exists in the central portion of one pixel, moves to the separation portion of the pixel, and the effective opening area can be increased by about 20 to 30%.

Further, according to the present invention for operating the photoelectric conversion device having this structure, the sensitivity is about 30 to 10 in comparison with the conventional one as the accumulation of effects such as reduction of the parasitic capacitance C _vl and increase of the effective aperture area. It can be increased by 80%.

Further, according to the present invention, the start and end of the accumulation operation can be made to coincide with all pixels, and the distortion of the output pixels can be prevented even when a high-speed moving image is picked up.

[Brief description of drawings]

FIG. 1 is a plan view of two pixels (two photoelectric conversion cells) of an embodiment of a photoelectric conversion device according to the present invention.

FIG. 2 is a sectional view taken along the line AA ′ of FIG.

3 is a sectional view taken along line BB ′ of FIG.

FIG. 4 is a cross-sectional view taken along the line CC ′ of FIG.

5 is a cross-sectional view of a capacitor C ₁ and its vicinity in FIG.

FIG. 6 is an equivalent circuit diagram of four pixels in the above embodiment.

FIG. 7 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 8 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 9 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 10 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 11 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 12 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 13 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 14 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 15 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 16 is a cross-sectional view showing the method of manufacturing the photoelectric conversion device of the above example.

FIG. 17 is a plan view illustrating the method for manufacturing the photoelectric conversion device according to the above-described embodiment.

FIG. 18 is a timing chart showing the operation of the photoelectric conversion device of the above-described embodiment.

FIG. 19 is an equivalent circuit diagram showing a configuration of a second embodiment of the photoelectric conversion device according to the present invention.

FIG. 20 is a timing chart showing the operation of the photoelectric conversion device according to the second embodiment.

FIG. 21 is an equivalent circuit diagram showing the configuration of a fourth embodiment of the photoelectric conversion device according to the present invention.

FIG. 22 is a timing chart showing the operation of the photoelectric conversion device according to the fourth embodiment.

FIG. 23 is an equivalent circuit diagram showing a configuration of a fifth embodiment of the photoelectric conversion device according to the present invention.

FIG. 24 is a schematic diagram for explaining a photoelectric conversion device according to an embodiment of the present invention.

FIG. 25 is a schematic diagram for explaining a photoelectric conversion device according to another embodiment of the present invention.

FIG. 26 is a schematic diagram for explaining the operation of the apparatus in FIG.

FIG. 27 is a plan view of a pixel using a conventional bipolar sensor.

FIG. 28 is a cross-sectional view of FIG. 27 taken along line XX ′.

FIG. 29 is a cross-sectional view of FIG. 27 taken along line YY ′.

30 is an equivalent circuit diagram of a two-dimensional photoelectric conversion device in which the pixels of FIG. 27 are arranged two-dimensionally.

FIG. 31 is a block diagram of a signal processing system using the photoelectric conversion device of the present invention.

[Explanation of symbols]

MR _{1 to} MR ₄ PMOS transistor MT _{1 to} MT ₄ PMOS transistor PD _{1 to} PD ₄ carrier accumulation region B ₃ base region Q ₁ and Q ₂ bipolar transistor 1 N type semiconductor substrate 2 N type buried layer 3 N type epitaxial layer 4 field Oxide film 5 Pad oxide film 7 Gate oxide film 8a, 8b First polycide electrode 9 P-type region (base region) 10 N-type region (emitter region) 11 Second polycide electrode 12 P-type region (carrier accumulation region) 13 Interlayer insulation film (BPSG) 14 interlayer insulating film (PSG) 15 first AL layer 16 second AL layer 17 passivation film MR11~MR22 reset switch transistor MT11~MT22 transfer transistors Q11~Q22 signal read transistor C _P 11 -C _P 22 light charge storage capacitor C _B 11 -C _B 22 signal holding capacitor _{OX 11~C OX} 22 control capacity

Claims (10)

[Claims] 1. A control electrode region made of a semiconductor of one conductivity type, and first and second main electrode regions made of a semiconductor of a conductivity type opposite to the one conductivity type, which are transferred to the control electrode region. A first transistor that outputs a signal from the first main electrode region based on the carrier, and a carrier that is provided adjacent to the first transistor and that accumulates carriers generated by receiving optical energy. A second transistor having a carrier storage region made of a semiconductor of one conductivity type and a source / drain region of the carrier storage region and a control electrode region of the transistor, wherein carriers stored in the carrier storage region are stored in the transistor. A photoelectric conversion device having, as one pixel, a photoelectric conversion cell having the second transistor for transferring to the control electrode region of. 2. The photoelectric conversion device according to claim 1,
A photoelectric conversion device in which an electrode is formed on at least a part of the control electrode region of the first transistor via an insulating film to form a capacitor, and the potential of the control electrode region is controlled by controlling the potential of the electrode. 3. The photoelectric conversion device according to claim 1,
The photoelectric conversion cells are arranged in a matrix, and between the pixels in an arrangement direction different from the arrangement direction of the second transistors,
A photoelectric conversion device provided with a third transistor for controlling conduction between the carrier accumulation regions in which adjacent carrier accumulation regions are used as source / drain regions. 4. The photoelectric conversion device according to claim 1,
The photoelectric conversion device in which the first transistor is shared by a plurality of pixels. 5. The photoelectric conversion device according to claim 1,
A plurality of the pixels are provided, and in all the pixels,
A photoelectric conversion device in which the second transistors are turned on at the same time. 6. The photoelectric conversion device according to claim 5,
A photoelectric conversion device in which the signals of each pixel are sequentially read out after the second transistors of all the pixels are turned on. 7. A signal processing system having the photoelectric conversion device according to claim 1. 8. The signal processing system according to claim 7, wherein the system further includes a central processing unit for controlling the photoelectric conversion device. 9. The signal processing system according to claim 7, further comprising a recording head. 10. A control electrode region made of a semiconductor of one conductivity type, and first and second main electrode regions made of a semiconductor of a conductivity type opposite to the one conductivity type, which are transferred to the control electrode region. A first transistor that outputs a signal from the first main electrode region based on the carrier, and a carrier that is provided adjacent to the first transistor and that accumulates carriers generated by receiving optical energy. A second transistor having a carrier storage region made of a semiconductor of one conductivity type and a source / drain region of the carrier storage region and a control electrode region of the transistor, wherein carriers stored in the carrier storage region are stored in the transistor. And a second transistor for transferring to a control electrode region of the photoelectric conversion cell, and a photoelectric conversion method of a photoelectric conversion device, wherein the photoelectric conversion cell having the second transistor constitutes one pixel. In, a reset operation of setting the carrier storage region and the control electrode region to an initial potential by making the second transistor conductive, and a storage operation of storing carriers generated by light irradiation in the carrier storage region, An operation of turning on the second transistor to transfer the carriers stored in the carrier storage region to the control electrode region, and a read operation for reading the potential of the control electrode region determined by the transferred carriers. And a photoelectric conversion method comprising: