JPH0677147A - Plasma reaction device - Google Patents

Abstract

PURPOSE:To provide an ECR device capable of etching the surface of a wafer uniformly. CONSTITUTION:A microwave introduction tube 18 is mounted in the central part of the ceiling of a plasma generating chamber 3. 17 designates a microwave introduction port, and the microwave introduction port 17 has a wall at the center, the periphery of which is made in the coaxial form of an opening 19, and a microwave is introduced into the plasma generating chamber 3 from the opening 19. Since the microwave introduction port 17 takes coaxial form, an enough amount of a microwave can be introduced into close proximity to the inside wall of the plasma generating chamber 3, and therefore, the concentration of plasma in a position closer to the side wall of the plasma generating chamber 3 can be increased. Thereby, the surface of a wafer 9 can be uniformly etched.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma reactor, and more particularly to electron cyclotron resonance (EC).
R) relates to a plasma reactor.

[0002]

2. Description of the Related Art Plasma etching using electron cyclotron resonance (ECR) is one of the plasma etching methods that realizes low damage, low contamination, and high anisotropic etching profile. FIG. 3 is a sectional view of a conventional ECR etching apparatus. The chamber 1 includes a plasma generation chamber 3 and an etching chamber 5. A magnetic coil 13 is provided around the side wall of the plasma generation chamber 3. A microwave introduction pipe 25 for guiding microwaves into the plasma generation chamber 3 is attached to the central portion of the ceiling of the plasma generation chamber 3. Two
7 is a microwave introduction port. A glass 28 is fitted into the microwave introduction port 27 to prevent gas and the like from entering the microwave introduction pipe 25. In addition, on the ceiling of the plasma generation chamber 3, a reactive gas is supplied to the plasma generation chamber 3
A reactive gas introducing pipe 14 for guiding the inside is attached. Reference numeral 15 is a reactive gas inlet.

A wafer holder 7 for holding a wafer 9 is mounted in the etching chamber 5. An exhaust pipe 10 for guiding the gas in the chamber 1 to the outside of the chamber 1 is attached to the etching chamber 5. Reference numeral 11 is an exhaust port.

The operation of the conventional ECR etching apparatus will be briefly described. First, while introducing a reactive gas such as a halogen gas into the plasma generation chamber 3 through the reactive gas introduction port 15, the reactive gas is exhausted through the exhaust port 11. In this state, the magnetic coil 13 forms a magnetic field of 875 G in the plasma generation chamber 3. Then, a microwave of 2.45 GHz is introduced into the plasma generation chamber 3 from the microwave introduction pipe 25.

As a result, in the plasma generating chamber 3, the microwave and the magnetic field resonate with each other, the energy is absorbed therein, and the spirally moving electrons collide with the reactive gas to form a high density plasma. It Then, the reactive gas plasma generated in the plasma generation chamber 3 is sent to the surface of the wafer 9 placed in the etching chamber 5 along the divergent magnetic field lines to etch the wafer 9.

[0006]

As shown in FIG. 3, in the conventional ECR etching apparatus, the microwave introducing tube 25 is attached to the central portion of the ceiling of the plasma generating chamber 3.
The plasma generated in the plasma generation chamber 3 is extinguished when it collides with the side wall of the plasma generation chamber 3. Therefore,
The plasma density tended to be low near the side wall of the plasma generation chamber 3. Therefore, the etching rate in the peripheral portion of the wafer 9 is lower than that in the central portion, and there is a problem that the in-plane uniformity of etching is reduced. In the case of plasma CVD, it was not possible to form an in-plane uniform thin film for the same reason.

The present invention has been made to solve the conventional problems of the present invention. An object of the present invention is to provide a plasma reactor capable of uniformly etching or forming a thin film on a surface of a wafer.

[0008]

According to a first aspect of the present invention, a plasma generation chamber, a magnetic field generation means for generating a magnetic field in the plasma generation chamber, and a plasma generation chamber are provided with a reactive gas. A gas inlet for introducing
A microwave inlet provided near the side wall of the plasma generation chamber and for introducing microwaves into the plasma generation chamber.

According to a second aspect of the present invention, a plasma generating chamber, a magnetic field generating means for generating a magnetic field in the plasma generating chamber, and a plasma introducing chamber are provided in the plasma generating chamber and a gas inlet for introducing a reactive gas into the plasma generating chamber. And a microwave provided in the plasma generation chamber, having a wall in the center and an opening in the periphery, and introducing microwaves from the opening into the plasma generation chamber.

[0010]

According to the first aspect of the present invention, since the microwave introduction port for introducing microwaves is provided in the plasma generation chamber in the vicinity of the side wall of the plasma generation chamber, the plasma concentration on the side wall of the plasma generation chamber can be increased. .

According to the second aspect of the present invention, since the microwave introduction port is coaxial, a sufficient amount of microwaves can be introduced also in the vicinity of the side wall of the plasma generation chamber, and therefore in the vicinity of the side wall of the plasma generation chamber. The plasma concentration can be increased.

[0012]

(First Embodiment) FIG. 1 shows an EC according to the present invention.
It is sectional drawing of 1st Example of R etching apparatus.

The same parts as those in the conventional example shown in FIG. 3 are designated by the same reference numerals and the description thereof will be omitted. In the first embodiment of the present invention, a coaxial microwave introduction tube 18 is attached to the central portion of the ceiling of the reaction chamber 3. Reference numeral 17 denotes a microwave introduction port, and the microwave introduction port has a wall at the center and an opening 19 at the periphery thereof. Microwaves are introduced into the plasma generation chamber 3 through the opening 19. A glass 20 is fitted in the opening 19.

In the first embodiment, since the microwave introduction port 17 is coaxial, a sufficient amount of microwaves can be introduced near the side wall of the plasma generating chamber 3. Therefore, the plasma concentration can be increased even in the vicinity of the side wall of the plasma generation chamber 3, the reduction of the etching rate in the peripheral portion of the wafer 9 can be suppressed, and the in-plane uniform etching of the wafer 9 can be performed. (Second Embodiment) FIG. 2 is a sectional view of a second embodiment of the ECR etching apparatus according to the present invention.

The same parts as those of the conventional example shown in FIG. 3 are designated by the same reference numerals and the description thereof will be omitted. In the second embodiment of the present invention, a plurality of microwave introduction pipes 21 are attached to a portion of the ceiling of the plasma generation chamber 3 which is in the vicinity of the side wall of the plasma generation chamber 3. Reference numeral 23 is a microwave introduction port. A glass 24 is fitted in the microwave introduction port 23.

The microwave inlet 23 is connected to the plasma generating chamber 3
Since it is provided in the vicinity of the side wall of the plasma generation chamber 3, a sufficient amount of microwave can be introduced also in the vicinity of the side wall of the plasma generation chamber 3. Therefore, the plasma concentration in the vicinity of the side wall of the plasma generation chamber 3 can be increased, and the in-plane uniform etching of the wafer 9 can be performed.

In the first and second embodiments, the etching apparatus using plasma has been described, but C using plasma is used.
It may be a VD device.

[0018]

According to the first aspect of the present invention, the microwave introduction port for introducing the microwave into the plasma generation chamber is provided near the side wall of the plasma generation chamber. Therefore, a sufficient amount of microwaves can be introduced also in the vicinity of the side wall of the plasma generation chamber 3, and the plasma concentration in the vicinity of the side wall of the plasma generation chamber can be increased. Therefore, when it is used as an etching apparatus, it is possible to perform uniform etching within the surface of the wafer. Further, when used as a CVD apparatus, it becomes possible to form a uniform thin film in the plane of the wafer.

According to the second aspect of the present invention, since the microwave introduction port is coaxial, a sufficient amount of microwaves can be introduced also in the vicinity of the side wall of the plasma generation chamber, and in the vicinity of the side wall of the plasma generation chamber. The plasma concentration can be increased. Therefore, the same effect as the first aspect is produced.

[Brief description of drawings]

FIG. 1 is a first of the ECR etching apparatus according to the present invention.
It is sectional drawing of an Example.

FIG. 2 is a second ECR etching apparatus according to the present invention.
It is sectional drawing of an Example.

FIG. 3 is a sectional view of a conventional ECR etching apparatus.

[Explanation of symbols]

 3 Plasma Generation Chamber 13 Magnetic Coil 15 Reactive Gas Inlet 17 Microwave Inlet 19 Opening

Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H05H 1/46 9014-2G

Claims (2)

[Claims] 1. A plasma generation chamber, a magnetic field generation means for generating a magnetic field in the plasma generation chamber, a gas inlet provided in the plasma generation chamber for introducing a reactive gas into the plasma generation chamber, and the plasma. A plasma reaction apparatus, comprising: a microwave inlet provided near a side wall of the generation chamber and introducing a microwave into the plasma generation chamber. 2. A plasma generating chamber, a magnetic field generating means for generating a magnetic field in the plasma generating chamber, a gas inlet provided in the plasma generating chamber for introducing a reactive gas into the plasma generating chamber, and the plasma. A plasma reactor provided with a microwave introduction port provided in a generation chamber, having a wall in the center and an opening in the periphery, and introducing a microwave into the plasma generation chamber from the opening.