JPH0669162A - Sputtering device - Google Patents

Abstract

PURPOSE:To improve manufacturing yield and reliability of a device etching particles attracted on a wafer surface and then eliminating them inside an RF etch chamber on a high-frequency plasma etching (RF etching) of a wafer in a sputtering device. CONSTITUTION:After RF etch is completed, the side of a wafer 2 is connected to a circuit to be grounded and at the same time a dust-collection electrode 5 is set to a negative potential using a high-voltage DC power supply 8. Since the side of the dust-collection electrode 5 is at the negative potential and the side of the water 2 is grounded, the surface of the wafer 2 is set to a positive potential, thus causing particles, as a whole, charged to positive potentials to leave the surface of the wafer 2 easily and eliminating the particles attracted by the dust-collection electrode 5 at the negative potential since argon plus ions are being applied during RF etch.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to a dust collecting mechanism in a high frequency plasma etching (hereinafter referred to as RF etching) mechanism.

[0002]

RF in a conventional sputtering apparatus
As shown in the schematic cross-sectional view of FIG. 2, the etching mechanism introduces an argon gas into the RF etching chamber 1 and applies a high frequency voltage into the chamber to turn the argon into plasma. A high frequency power source 4 is provided on the side of the wafer 2, and the high frequency power source 4 is used for the wafer stage 3
Since a self-bias is generated on the side and a negative potential is generated, positive argon ions are attracted to the wafer 2 side and collide. Oxides and the like on the surface of the wafer 2 can be physically etched by the colliding argon ions.

[0003]

In the RF etching mechanism of the conventional sputtering apparatus, since particles of etched oxide or the like are irradiated with positive ions of argon during RF etching, the entire particles have a positive potential. And is attracted to the surface of the wafer that is applied with a negative potential, making it difficult to separate. Therefore, there are problems such as a decrease in device yield and a decrease in reliability due to particles remaining on the wafer.

Further, in order to remove particles generated by RF etching, it is necessary to open the RF etching chamber to the atmosphere and clean it, which becomes a main factor of a decrease in the operation of the apparatus and becomes a problem.

[0005]

A sputtering device of the present invention comprises an electrode for collecting particles in an RF etching mechanism, a DC power source, an electrode chamber for storing the electrode, and a moving device for moving the electrode to the electrode chamber. It has an added configuration.

[0006]

The present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view of an embodiment of the present invention. In this embodiment, a dust collecting electrode 5 having a dielectric as a dust collecting surface, an electrode chamber 6 for storing the dust collecting electrode 5, and a dust collecting electrode 5
An electrode moving device 7 for moving between the F etching chamber 1 and the electrode chamber 6, a high voltage DC power source 8 for applying a DC voltage to the dust collecting electrode 5, and an RF etching chamber 1
The dust collecting mechanism composed of the electrode chamber shutter 9 for preventing cross contamination between the electrode chamber 6 and the electrode chamber 6 is additionally installed in the RF etching chamber of the conventional sputtering apparatus.

The dust collecting action of this embodiment will be described below. First, after completion of RF etching, the electrode chamber shutter 9 is opened, the dust collecting electrode 5 is moved from the electrode chamber 6 to the RF etching chamber 1, and the dust collecting electrode 5 is brought close to the wafer 2. After that, the switch is switched from the circuit connected to the high-frequency power source 3 to the circuit for dropping the wafer 2 side. At the same time, the high voltage DC power supply 8 is used to apply the dust collecting electrode 5 to a negative potential. Since the dust collecting electrode 5 side is negative potential and the wafer 2 side is grounded, the surface of the wafer 2 is applied to positive potential. Therefore, the potential of the particle and the surface of the wafer 2 becomes positive and positive, and the particle becomes easier to separate from the wafer 2. Further, since the dust collecting electrode 5 approaching the surface of the wafer 2 has a negative potential, the positive potential particles are attracted to the dust collecting electrode 5 and the particles can be captured. After capturing particles, the dust collecting electrode 5 is stored in the electrode chamber 6 and the electrode chamber shutter 9 is closed.

By using the dust collecting mechanism described above, particles generated during RF etching can be removed from the wafer surface, and contamination of the chamber due to the generated particles can be prevented.

[0009]

As described above, according to the present invention, since the RF etching mechanism is provided with the dust collecting mechanism, even if particles such as etched oxides are hard to separate from the wafer, they are removed from the wafer after the etching treatment. I can. Therefore, it is possible to prevent a decrease in device manufacturing yield due to particles and improve reliability. Also, because the frequency of cleaning the RF etch chamber can be extended (7 to 12 days),
The operation of the device can be greatly improved.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a conventional sputtering device.

[Explanation of symbols]

 1 RF Etch Chamber 2 Wafer 3 Wafer Stage 4 High Frequency Power Supply 5 Dust Collection Electrode 6 Electrode Chamber 7 Electrode Moving Device 8 High Voltage DC Power Supply 9 Electrode Chamber Shutter

Claims (1)

[Claims] 1. In a sputtering apparatus having a high frequency plasma etching mechanism, an electrode for collecting particles in an etching chamber, a DC power source for applying a high voltage to the electrode, an electrode chamber for storing the electrode, and an electrode chamber A sputtering apparatus comprising: a moving device that moves an electrode.